AT265367B - Unipolar verstärkender planarer Transistor - Google Patents

Unipolar verstärkender planarer Transistor

Info

Publication number
AT265367B
AT265367B AT1080964A AT1080964A AT265367B AT 265367 B AT265367 B AT 265367B AT 1080964 A AT1080964 A AT 1080964A AT 1080964 A AT1080964 A AT 1080964A AT 265367 B AT265367 B AT 265367B
Authority
AT
Austria
Prior art keywords
unipolar
amplifying
planar transistor
planar
transistor
Prior art date
Application number
AT1080964A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of AT265367B publication Critical patent/AT265367B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
AT1080964A 1963-12-26 1964-12-21 Unipolar verstärkender planarer Transistor AT265367B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US333435A US3263095A (en) 1963-12-26 1963-12-26 Heterojunction surface channel transistors

Publications (1)

Publication Number Publication Date
AT265367B true AT265367B (de) 1968-10-10

Family

ID=23302767

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1080964A AT265367B (de) 1963-12-26 1964-12-21 Unipolar verstärkender planarer Transistor

Country Status (4)

Country Link
US (1) US3263095A (de)
AT (1) AT265367B (de)
DE (1) DE1489038A1 (de)
GB (1) GB1081368A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel
US3386016A (en) * 1965-08-02 1968-05-28 Sprague Electric Co Field effect transistor with an induced p-type channel by means of high work function metal or oxide
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor
US3448353A (en) * 1966-11-14 1969-06-03 Westinghouse Electric Corp Mos field effect transistor hall effect devices
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit
JPS4834467B1 (de) * 1970-03-13 1973-10-22
US3737742A (en) * 1971-09-30 1973-06-05 Trw Inc Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact
US3946415A (en) * 1974-08-28 1976-03-23 Harris Corporation Normally off schottky barrier field effect transistor and method of fabrication
US3996656A (en) * 1974-08-28 1976-12-14 Harris Corporation Normally off Schottky barrier field effect transistor and method of fabrication
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
USRE33584E (en) * 1979-12-28 1991-05-07 Fujitsu Limited High electron mobility single heterojunction semiconductor devices
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
EP0237029A3 (de) * 1986-03-10 1988-01-27 Nec Corporation Feldeffektanordnung mit Heteroübergang, die bei einer hohen Stromstärke funktioniert und mit hoher Durchschlagspannung
US7233739B2 (en) * 2001-10-22 2007-06-19 Patel C Kumar N Optical bit stream reader system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
NL252533A (de) * 1959-06-30 1900-01-01
NL265382A (de) * 1960-03-08
NL269345A (de) * 1960-09-19

Also Published As

Publication number Publication date
GB1081368A (en) 1967-08-31
DE1489038A1 (de) 1969-05-14
US3263095A (en) 1966-07-26

Similar Documents

Publication Publication Date Title
AT265367B (de) Unipolar verstärkender planarer Transistor
FR1381188A (fr) Amplificateur
FR1396830A (fr) Transistor unipolaire
BR6456877D0 (pt) Amplificador
AT248771B (de) Eggenvorrichtung
AT243855B (de) Parametrischer Verstärker
CH429951A (de) Transistor
CH452611A (de) Transistorverstärker
FR1395536A (fr) Polyculteur attelé
FR1362702A (fr) Charrue
FR1356464A (fr) Herse
NL143074B (nl) Transistor.
NL156283B (nl) Parametrische versterker.
FR1396089A (fr) Ejecto-convecteur double
AT251038B (de) Transistor
CH402952A (fr) Amplificateur
FR1353769A (fr) Tracteur
FR1365963A (fr) Transistor unijonction
AT279247B (de) Landwirtschaftliches Gerät
NL147276B (nl) Transistorschakeling.
CH418531A (de) Sterilisiergerät
FR1401551A (fr) Amplificateur à transistor
FR1418517A (fr) Transistor
FR1382717A (fr) Transistor
FR1348156A (fr) Transistor