FR1366901A - Triode à effet de champ - Google Patents

Triode à effet de champ

Info

Publication number
FR1366901A
FR1366901A FR937097A FR937097A FR1366901A FR 1366901 A FR1366901 A FR 1366901A FR 937097 A FR937097 A FR 937097A FR 937097 A FR937097 A FR 937097A FR 1366901 A FR1366901 A FR 1366901A
Authority
FR
France
Prior art keywords
field effect
effect triode
triode
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR937097A
Other languages
English (en)
Inventor
Yves Thorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe dElectronique et dAutomatisme SA
Original Assignee
Societe dElectronique et dAutomatisme SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe dElectronique et dAutomatisme SA filed Critical Societe dElectronique et dAutomatisme SA
Priority to FR937097A priority Critical patent/FR1366901A/fr
Application granted granted Critical
Publication of FR1366901A publication Critical patent/FR1366901A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR937097A 1963-06-05 1963-06-05 Triode à effet de champ Expired FR1366901A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR937097A FR1366901A (fr) 1963-06-05 1963-06-05 Triode à effet de champ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR937097A FR1366901A (fr) 1963-06-05 1963-06-05 Triode à effet de champ

Publications (1)

Publication Number Publication Date
FR1366901A true FR1366901A (fr) 1964-07-17

Family

ID=8805370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR937097A Expired FR1366901A (fr) 1963-06-05 1963-06-05 Triode à effet de champ

Country Status (1)

Country Link
FR (1) FR1366901A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

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