FR1377330A - Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés - Google Patents

Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés

Info

Publication number
FR1377330A
FR1377330A FR942896A FR942896A FR1377330A FR 1377330 A FR1377330 A FR 1377330A FR 942896 A FR942896 A FR 942896A FR 942896 A FR942896 A FR 942896A FR 1377330 A FR1377330 A FR 1377330A
Authority
FR
France
Prior art keywords
enhancements
field effect
semiconductor devices
effect semiconductor
integrated multichannel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR942896A
Other languages
English (en)
Inventor
Stanislas Teszner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR942896A priority Critical patent/FR1377330A/fr
Application filed filed Critical
Priority to DET26654A priority patent/DE1293900B/de
Priority to NL646408428A priority patent/NL143734B/xx
Priority to CH970464A priority patent/CH414872A/fr
Priority to US385023A priority patent/US3372316A/en
Priority to GB30972/64A priority patent/GB1045314A/en
Publication of FR1377330A publication Critical patent/FR1377330A/fr
Application granted granted Critical
Priority to FR6722A priority patent/FR87873E/fr
Priority to CH231666A priority patent/CH429953A/fr
Priority to US528896A priority patent/US3407342A/en
Priority to GB7612/66A priority patent/GB1090696A/en
Priority to NL666602337A priority patent/NL152119B/xx
Priority to DE1514932A priority patent/DE1514932C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR942896A 1963-07-26 1963-07-26 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés Expired FR1377330A (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
FR942896A FR1377330A (fr) 1963-07-26 1963-07-26 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
DET26654A DE1293900B (de) 1963-07-26 1964-07-23 Feldeffekt-Halbleiterbauelement
NL646408428A NL143734B (nl) 1963-07-26 1964-07-23 Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze.
CH970464A CH414872A (fr) 1963-07-26 1964-07-24 Dispositif semi-conducteur à effet de champ à canaux multiples intégrés
US385023A US3372316A (en) 1963-07-26 1964-07-24 Integral grid and multichannel field effect devices
GB30972/64A GB1045314A (en) 1963-07-26 1964-08-04 Improvements relating to semiconductor devices
FR6722A FR87873E (fr) 1963-07-26 1965-02-23 Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés
CH231666A CH429953A (fr) 1963-07-26 1966-02-17 Dispositif semiconducteur
US528896A US3407342A (en) 1963-07-26 1966-02-21 Integral grid and multichannel field effect devices
GB7612/66A GB1090696A (en) 1963-07-26 1966-02-22 Improvements in or relating to semiconductor devices
NL666602337A NL152119B (nl) 1963-07-26 1966-02-23 Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden.
DE1514932A DE1514932C3 (de) 1963-07-26 1966-02-23 Halbleiterbauelement mit Feldeffekt

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR942896A FR1377330A (fr) 1963-07-26 1963-07-26 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
FR6722A FR87873E (fr) 1963-07-26 1965-02-23 Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés

Publications (1)

Publication Number Publication Date
FR1377330A true FR1377330A (fr) 1964-11-06

Family

ID=26162207

Family Applications (2)

Application Number Title Priority Date Filing Date
FR942896A Expired FR1377330A (fr) 1963-07-26 1963-07-26 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
FR6722A Expired FR87873E (fr) 1963-07-26 1965-02-23 Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR6722A Expired FR87873E (fr) 1963-07-26 1965-02-23 Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés

Country Status (6)

Country Link
US (2) US3372316A (fr)
CH (2) CH414872A (fr)
DE (2) DE1293900B (fr)
FR (2) FR1377330A (fr)
GB (2) GB1045314A (fr)
NL (2) NL143734B (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
EP0167814A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance à double empilement
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US6020607A (en) * 1995-02-21 2000-02-01 Nec Corporation Semiconductor device having junction field effect transistors

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
US3443172A (en) * 1965-11-16 1969-05-06 Monsanto Co Low capacitance field effect transistor
CH568659A5 (fr) * 1972-03-10 1975-10-31 Teszner Stanislas
JPS5017771A (fr) * 1973-06-15 1975-02-25
US4959697A (en) * 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
GB912114A (en) * 1960-09-26 1962-12-05 Westinghouse Electric Corp Semiconductor devices
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
FR1329626A (fr) * 1962-04-04 1963-06-14 Europ Des Semi Conducteurs Soc Perfectionnements aux transistors à effet de champ, de hautes performances
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
EP0167814A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance à double empilement
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US6020607A (en) * 1995-02-21 2000-02-01 Nec Corporation Semiconductor device having junction field effect transistors

Also Published As

Publication number Publication date
NL152119B (nl) 1977-01-17
DE1514932B2 (de) 1974-06-12
CH414872A (fr) 1966-06-15
DE1514932C3 (de) 1975-01-30
GB1090696A (en) 1967-11-15
NL143734B (nl) 1974-10-15
FR87873E (fr) 1966-07-08
NL6602337A (fr) 1966-08-24
US3372316A (en) 1968-03-05
NL6408428A (fr) 1965-01-27
CH429953A (fr) 1967-02-15
US3407342A (en) 1968-10-22
DE1514932A1 (de) 1969-09-11
DE1293900B (de) 1969-04-30
GB1045314A (en) 1966-10-12

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