FR1329626A - Perfectionnements aux transistors à effet de champ, de hautes performances - Google Patents

Perfectionnements aux transistors à effet de champ, de hautes performances

Info

Publication number
FR1329626A
FR1329626A FR893315A FR893315A FR1329626A FR 1329626 A FR1329626 A FR 1329626A FR 893315 A FR893315 A FR 893315A FR 893315 A FR893315 A FR 893315A FR 1329626 A FR1329626 A FR 1329626A
Authority
FR
France
Prior art keywords
field effect
high performance
effect transistors
performance field
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR893315A
Other languages
English (en)
Inventor
Albert Paul Bobenrieth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUROP DES SEMI CONDUCTEURS SOC
Original Assignee
EUROP DES SEMI CONDUCTEURS SOC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUROP DES SEMI CONDUCTEURS SOC filed Critical EUROP DES SEMI CONDUCTEURS SOC
Priority to FR893315A priority Critical patent/FR1329626A/fr
Application granted granted Critical
Publication of FR1329626A publication Critical patent/FR1329626A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR893315A 1962-04-04 1962-04-04 Perfectionnements aux transistors à effet de champ, de hautes performances Expired FR1329626A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR893315A FR1329626A (fr) 1962-04-04 1962-04-04 Perfectionnements aux transistors à effet de champ, de hautes performances

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR893315A FR1329626A (fr) 1962-04-04 1962-04-04 Perfectionnements aux transistors à effet de champ, de hautes performances

Publications (1)

Publication Number Publication Date
FR1329626A true FR1329626A (fr) 1963-06-14

Family

ID=8776072

Family Applications (1)

Application Number Title Priority Date Filing Date
FR893315A Expired FR1329626A (fr) 1962-04-04 1962-04-04 Perfectionnements aux transistors à effet de champ, de hautes performances

Country Status (1)

Country Link
FR (1) FR1329626A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293900B (de) * 1963-07-26 1969-04-30 Teszner Stanislas Feldeffekt-Halbleiterbauelement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293900B (de) * 1963-07-26 1969-04-30 Teszner Stanislas Feldeffekt-Halbleiterbauelement

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