NL6408428A - - Google Patents

Info

Publication number
NL6408428A
NL6408428A NL6408428A NL6408428A NL6408428A NL 6408428 A NL6408428 A NL 6408428A NL 6408428 A NL6408428 A NL 6408428A NL 6408428 A NL6408428 A NL 6408428A NL 6408428 A NL6408428 A NL 6408428A
Authority
NL
Netherlands
Application number
NL6408428A
Other versions
NL143734B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6408428A publication Critical patent/NL6408428A/xx
Publication of NL143734B publication Critical patent/NL143734B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL646408428A 1963-07-26 1964-07-23 Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze. NL143734B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR942896A FR1377330A (fr) 1963-07-26 1963-07-26 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
FR6722A FR87873E (fr) 1963-07-26 1965-02-23 Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés

Publications (2)

Publication Number Publication Date
NL6408428A true NL6408428A (fr) 1965-01-27
NL143734B NL143734B (nl) 1974-10-15

Family

ID=26162207

Family Applications (2)

Application Number Title Priority Date Filing Date
NL646408428A NL143734B (nl) 1963-07-26 1964-07-23 Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze.
NL666602337A NL152119B (nl) 1963-07-26 1966-02-23 Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL666602337A NL152119B (nl) 1963-07-26 1966-02-23 Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden.

Country Status (6)

Country Link
US (2) US3372316A (fr)
CH (2) CH414872A (fr)
DE (2) DE1293900B (fr)
FR (2) FR1377330A (fr)
GB (2) GB1045314A (fr)
NL (2) NL143734B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
US3443172A (en) * 1965-11-16 1969-05-06 Monsanto Co Low capacitance field effect transistor
NL7303347A (fr) * 1972-03-10 1973-09-12
JPS5017771A (fr) * 1973-06-15 1975-02-25
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US4959697A (en) * 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor
JP2713205B2 (ja) * 1995-02-21 1998-02-16 日本電気株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
GB912114A (en) * 1960-09-26 1962-12-05 Westinghouse Electric Corp Semiconductor devices
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
FR1329626A (fr) * 1962-04-04 1963-06-14 Europ Des Semi Conducteurs Soc Perfectionnements aux transistors à effet de champ, de hautes performances
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés

Also Published As

Publication number Publication date
GB1045314A (en) 1966-10-12
DE1514932A1 (de) 1969-09-11
DE1514932C3 (de) 1975-01-30
GB1090696A (en) 1967-11-15
DE1293900B (de) 1969-04-30
DE1514932B2 (de) 1974-06-12
FR1377330A (fr) 1964-11-06
US3407342A (en) 1968-10-22
CH414872A (fr) 1966-06-15
FR87873E (fr) 1966-07-08
NL6602337A (fr) 1966-08-24
NL143734B (nl) 1974-10-15
US3372316A (en) 1968-03-05
NL152119B (nl) 1977-01-17
CH429953A (fr) 1967-02-15

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: TESZNER