FR3132380B1 - Procédé de fabrication d’une structure de type double semi-conducteur sur isolant - Google Patents

Procédé de fabrication d’une structure de type double semi-conducteur sur isolant Download PDF

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Publication number
FR3132380B1
FR3132380B1 FR2200849A FR2200849A FR3132380B1 FR 3132380 B1 FR3132380 B1 FR 3132380B1 FR 2200849 A FR2200849 A FR 2200849A FR 2200849 A FR2200849 A FR 2200849A FR 3132380 B1 FR3132380 B1 FR 3132380B1
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FR
France
Prior art keywords
donor substrate
transferred
manufacturing
semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2200849A
Other languages
English (en)
French (fr)
Other versions
FR3132380A1 (fr
Inventor
Carine Duret
Ludovic Ecarnot
Charlene Porta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2200849A priority Critical patent/FR3132380B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to KR1020247029136A priority patent/KR20240142524A/ko
Priority to CN202380019046.5A priority patent/CN118633150A/zh
Priority to EP23706412.6A priority patent/EP4473560A1/fr
Priority to PCT/FR2023/050116 priority patent/WO2023144496A1/fr
Priority to TW112103175A priority patent/TW202347607A/zh
Priority to JP2024543908A priority patent/JP2025504525A/ja
Priority to US18/834,746 priority patent/US20250140601A1/en
Publication of FR3132380A1 publication Critical patent/FR3132380A1/fr
Application granted granted Critical
Publication of FR3132380B1 publication Critical patent/FR3132380B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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FR2200849A 2022-01-31 2022-01-31 Procédé de fabrication d’une structure de type double semi-conducteur sur isolant Active FR3132380B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2200849A FR3132380B1 (fr) 2022-01-31 2022-01-31 Procédé de fabrication d’une structure de type double semi-conducteur sur isolant
CN202380019046.5A CN118633150A (zh) 2022-01-31 2023-01-30 用于制造双绝缘体上半导体结构的方法
EP23706412.6A EP4473560A1 (fr) 2022-01-31 2023-01-30 Procédé de fabrication d'une structure de type double semi-conducteur sur isolant
PCT/FR2023/050116 WO2023144496A1 (fr) 2022-01-31 2023-01-30 Procédé de fabrication d'une structure de type double semi-conducteur sur isolant
KR1020247029136A KR20240142524A (ko) 2022-01-31 2023-01-30 이중 반도체-온-절연체 구조물을 제조하기 위한 공정
TW112103175A TW202347607A (zh) 2022-01-31 2023-01-30 用於製作雙重絕緣體上半導體結構之方法
JP2024543908A JP2025504525A (ja) 2022-01-31 2023-01-30 二重半導体オンインシュレータ構造を作製するためのプロセス
US18/834,746 US20250140601A1 (en) 2022-01-31 2023-01-30 Process for fabricating a double semiconductor-on-insulator structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2200849A FR3132380B1 (fr) 2022-01-31 2022-01-31 Procédé de fabrication d’une structure de type double semi-conducteur sur isolant
FR2200849 2022-01-31

Publications (2)

Publication Number Publication Date
FR3132380A1 FR3132380A1 (fr) 2023-08-04
FR3132380B1 true FR3132380B1 (fr) 2024-11-29

Family

ID=81449054

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2200849A Active FR3132380B1 (fr) 2022-01-31 2022-01-31 Procédé de fabrication d’une structure de type double semi-conducteur sur isolant

Country Status (8)

Country Link
US (1) US20250140601A1 (https=)
EP (1) EP4473560A1 (https=)
JP (1) JP2025504525A (https=)
KR (1) KR20240142524A (https=)
CN (1) CN118633150A (https=)
FR (1) FR3132380B1 (https=)
TW (1) TW202347607A (https=)
WO (1) WO2023144496A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117594522A (zh) * 2023-12-25 2024-02-23 中国科学院微电子研究所 一种新型绝缘体上硅晶圆及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3975634B2 (ja) * 2000-01-25 2007-09-12 信越半導体株式会社 半導体ウェハの製作法
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
JP5673572B2 (ja) * 2012-01-24 2015-02-18 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
FR2987935B1 (fr) * 2012-03-12 2016-07-22 Soitec Silicon On Insulator Procede d'amincissement de la couche active de silicium d'un substrat du type "silicium sur isolant" (soi).

Also Published As

Publication number Publication date
US20250140601A1 (en) 2025-05-01
WO2023144496A1 (fr) 2023-08-03
JP2025504525A (ja) 2025-02-12
EP4473560A1 (fr) 2024-12-11
CN118633150A (zh) 2024-09-10
TW202347607A (zh) 2023-12-01
KR20240142524A (ko) 2024-09-30
FR3132380A1 (fr) 2023-08-04

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