FR3067629B1 - Tampon de polissage a structure de rainures trapezoidales - Google Patents

Tampon de polissage a structure de rainures trapezoidales Download PDF

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Publication number
FR3067629B1
FR3067629B1 FR1855175A FR1855175A FR3067629B1 FR 3067629 B1 FR3067629 B1 FR 3067629B1 FR 1855175 A FR1855175 A FR 1855175A FR 1855175 A FR1855175 A FR 1855175A FR 3067629 B1 FR3067629 B1 FR 3067629B1
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FR
France
Prior art keywords
polishing
polishing pad
trapezoidal groove
series
radial feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1855175A
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English (en)
Other versions
FR3067629A1 (fr
Inventor
John Vu Nguyen
Tony Quan Tran
Jeffrey James Hendron
Jeffrey Robert Stack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication of FR3067629A1 publication Critical patent/FR3067629A1/fr
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Publication of FR3067629B1 publication Critical patent/FR3067629B1/fr
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Golf Clubs (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un tampon de polissage (10 ; 210) convenant pour le polissage ou la planarisation d'une galette d'au moins l'un parmi les substrats semi-conducteurs, optiques et magnétiques. Le tampon de polissage (10; 210) comprend une couche de polissage (12 ; 212) ayant une matrice polymère et des rainures d'alimentation radiales (20-34 ; 220-234) dans la couche de polissage séparant la couche de polissage (12 ; 212) en régions de polissage (40-54 ; 240-254). Les rainures d'alimentation radiales (20-34 ; 220-234) s'étendent au moins depuis un emplacement adjacent au centre jusqu'à un emplacement adjacent au bord extérieur (18 ; 218) du tampon de polissage. Chaque région de polissage (40-54 ; 240-254) comprend une série de structures de rainures trapézoïdales non isocèles espacées (260-268) ayant des segments de base parallèles connectant deux rainures d'alimentation radiales adjacentes pour former des segments de côté. La série de structures de rainures trapézoïdales non isocèles s'étend depuis un emplacement adjacent au bord extérieur en direction du centre du tampon de polissage, le périmètre de la série de structures trapézoïdales étant également un trapèze.
FR1855175A 2017-06-14 2018-06-13 Tampon de polissage a structure de rainures trapezoidales Active FR3067629B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201715623221A 2017-06-14 2017-06-14
US15623221 2017-06-14
US201715624908A 2017-06-16 2017-06-16
US15624908 2017-06-16
US15725987 2017-10-05
US15/725,987 US10857648B2 (en) 2017-06-14 2017-10-05 Trapezoidal CMP groove pattern

Publications (2)

Publication Number Publication Date
FR3067629A1 FR3067629A1 (fr) 2018-12-21
FR3067629B1 true FR3067629B1 (fr) 2022-04-01

Family

ID=64457734

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1855175A Active FR3067629B1 (fr) 2017-06-14 2018-06-13 Tampon de polissage a structure de rainures trapezoidales

Country Status (8)

Country Link
US (1) US10857648B2 (fr)
JP (1) JP7207870B2 (fr)
KR (1) KR102660717B1 (fr)
CN (1) CN109079650B (fr)
DE (1) DE102018004631A1 (fr)
FR (1) FR3067629B1 (fr)
SG (1) SG10201804557UA (fr)
TW (1) TWI774770B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI679083B (zh) * 2019-01-02 2019-12-11 力晶積成電子製造股份有限公司 研磨墊
KR20210116759A (ko) 2020-03-13 2021-09-28 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치
CN112757154B (zh) * 2021-01-22 2024-05-10 湖北鼎汇微电子材料有限公司 一种抛光垫
CN112959212B (zh) * 2021-03-22 2023-03-03 万华化学集团电子材料有限公司 一种带有优化沟槽的化学机械抛光垫及其应用
CN114952609B (zh) * 2022-04-22 2024-08-16 万华化学集团电子材料有限公司 一种新旧抛光液含比可控的cmp抛光垫、抛光方法及其应用

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Also Published As

Publication number Publication date
US10857648B2 (en) 2020-12-08
DE102018004631A1 (de) 2018-12-20
JP2019022930A (ja) 2019-02-14
JP7207870B2 (ja) 2023-01-18
KR20180136375A (ko) 2018-12-24
TW201904719A (zh) 2019-02-01
SG10201804557UA (en) 2019-01-30
KR102660717B1 (ko) 2024-04-26
US20180361533A1 (en) 2018-12-20
TWI774770B (zh) 2022-08-21
CN109079650B (zh) 2021-05-14
CN109079650A (zh) 2018-12-25
FR3067629A1 (fr) 2018-12-21

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