FR3065319B1 - Module electronique de puissance et convertisseur electrique de puissance l’incorporant - Google Patents

Module electronique de puissance et convertisseur electrique de puissance l’incorporant Download PDF

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Publication number
FR3065319B1
FR3065319B1 FR1753254A FR1753254A FR3065319B1 FR 3065319 B1 FR3065319 B1 FR 3065319B1 FR 1753254 A FR1753254 A FR 1753254A FR 1753254 A FR1753254 A FR 1753254A FR 3065319 B1 FR3065319 B1 FR 3065319B1
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FR
France
Prior art keywords
substrate
common intermediate
electronic chips
electric power
converter incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1753254A
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English (en)
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FR3065319A1 (fr
Inventor
Hadi Alawieh
Menouar Ameziani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut Vedecom
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Institut Vedecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Vedecom filed Critical Institut Vedecom
Priority to FR1753254A priority Critical patent/FR3065319B1/fr
Priority to US16/604,524 priority patent/US10714406B2/en
Priority to PCT/FR2018/050883 priority patent/WO2018189468A1/fr
Priority to EP18723901.7A priority patent/EP3610503A1/fr
Priority to CN201880025047.XA priority patent/CN110506330B/zh
Publication of FR3065319A1 publication Critical patent/FR3065319A1/fr
Application granted granted Critical
Publication of FR3065319B1 publication Critical patent/FR3065319B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4068—Heatconductors between device and heatsink, e.g. compliant heat-spreaders, heat-conducting bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

Le module (PM1) a une architecture à empilement 3D des puces électroniques (IT, ID) et comprend des premier et deuxième substrats diélectriques (SH, SL) destinés à venir en contact thermique avec respectivement des premier et deuxième dissipateurs thermiques (DH, DL), au moins une paire de première et deuxième puces électroniques empilées (ITHS, IDHS ; ITHS, IDHS) et un substrat intermédiaire commun (SC), les première et deuxième puces électroniques étant implantées en sandwich respectivement entre le premier substrat diélectrique et le substrat intermédiaire commun et entre le substrat intermédiaire commun et le deuxième substrat diélectrique. Conformément à l'invention, le substrat intermédiaire commun est un élément métallique monobloc et comprend une portion centrale pour l'implantation des puces électroniques et au moins une portion de conduction thermique en contact thermique avec le premier substrat diélectrique et/ou le deuxième substrat diélectrique.
FR1753254A 2017-04-13 2017-04-13 Module electronique de puissance et convertisseur electrique de puissance l’incorporant Active FR3065319B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1753254A FR3065319B1 (fr) 2017-04-13 2017-04-13 Module electronique de puissance et convertisseur electrique de puissance l’incorporant
US16/604,524 US10714406B2 (en) 2017-04-13 2018-04-09 Electronic power module and electrical power converter incorporating same
PCT/FR2018/050883 WO2018189468A1 (fr) 2017-04-13 2018-04-09 Module électronique de puissance et convertisseur électrique de puissance l'incorporant
EP18723901.7A EP3610503A1 (fr) 2017-04-13 2018-04-09 Module électronique de puissance et convertisseur électrique de puissance l'incorporant
CN201880025047.XA CN110506330B (zh) 2017-04-13 2018-04-09 功率电子模块以及包含该模块的电功率变换器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1753254A FR3065319B1 (fr) 2017-04-13 2017-04-13 Module electronique de puissance et convertisseur electrique de puissance l’incorporant
FR1753254 2017-04-13

Publications (2)

Publication Number Publication Date
FR3065319A1 FR3065319A1 (fr) 2018-10-19
FR3065319B1 true FR3065319B1 (fr) 2019-04-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1753254A Active FR3065319B1 (fr) 2017-04-13 2017-04-13 Module electronique de puissance et convertisseur electrique de puissance l’incorporant

Country Status (5)

Country Link
US (1) US10714406B2 (fr)
EP (1) EP3610503A1 (fr)
CN (1) CN110506330B (fr)
FR (1) FR3065319B1 (fr)
WO (1) WO2018189468A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607919B2 (en) * 2017-04-28 2020-03-31 Semiconductor Components Industries, Llc Semiconductor package having junction cooling pipes embedded in substrates
FR3088137B1 (fr) * 2018-11-06 2020-11-27 Inst Polytechnique Grenoble Systeme electronique de puissance
US11876034B2 (en) * 2021-03-29 2024-01-16 GM Global Technology Operations LLC 3-D power modules with double sided cooling per semiconductor die
WO2022216700A1 (fr) * 2021-04-09 2022-10-13 Murata Manufacturing Co., Ltd. Module convertisseur cc-cc isolé intégré
GB2613794A (en) * 2021-12-14 2023-06-21 Zhuzhou Crrc Times Electric Co Ltd Power semiconductor module
CN116153884A (zh) * 2023-04-18 2023-05-23 上海韬润半导体有限公司 一种倒装芯片封装结构及封装方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2426229C3 (de) * 1974-05-29 1979-10-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Selbsttragender Träger für die Aufnahme von elektronischen Bauelementen
JP3845408B2 (ja) * 2003-10-06 2006-11-15 エルピーダメモリ株式会社 メモリモジュール放熱装置
JP2006310668A (ja) * 2005-04-28 2006-11-09 Sharp Corp 電子デバイスにおける放熱板取付構造、及び、放熱板取付方法
US8288205B2 (en) * 2008-03-19 2012-10-16 Stats Chippac Ltd. Package in package system incorporating an internal stiffener component
US8564125B2 (en) * 2011-09-02 2013-10-22 Stats Chippac Ltd. Integrated circuit packaging system with embedded thermal heat shield and method of manufacture thereof
JP6237647B2 (ja) * 2013-01-07 2017-11-29 パナソニック株式会社 放熱部材を備えた半導体装置
JPWO2014188632A1 (ja) * 2013-05-23 2017-02-23 パナソニック株式会社 放熱構造を有する半導体装置および半導体装置の積層体
US20160005675A1 (en) 2014-07-07 2016-01-07 Infineon Technologies Ag Double sided cooling chip package and method of manufacturing the same
JP6392163B2 (ja) * 2015-04-17 2018-09-19 新光電気工業株式会社 配線基板及びその製造方法、半導体装置

Also Published As

Publication number Publication date
WO2018189468A1 (fr) 2018-10-18
US20200152547A1 (en) 2020-05-14
CN110506330B (zh) 2023-05-30
EP3610503A1 (fr) 2020-02-19
CN110506330A (zh) 2019-11-26
US10714406B2 (en) 2020-07-14
FR3065319A1 (fr) 2018-10-19

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