CN102790029B - 功率半导体模块和功率半导体模块系统 - Google Patents
功率半导体模块和功率半导体模块系统 Download PDFInfo
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Abstract
本发明涉及功率半导体模块。功率半导体模块(100)具有导电的连接元件(11a)以及容纳区域(80)、以及夹紧元件(81),该夹紧元件可以从第一位置被带入第二位置。只要该夹紧元件(81)处于第一位置,则模块外部的连接导体(200)的连接区域(201)可以被导入容纳区域(80)并且在构造连接区域(201)和连接元件(11a)之间的导电连接的情况下与功率半导体模块(100)夹紧。为此,夹紧元件(81)从第一位置被带入第二位置。
Description
技术领域
本发明涉及功率半导体模块。功率半导体模块通常借助低欧姆的连接导体被连接到电压供给装置或负载上,所述功率半导体模块被供给高电流和/或提供高的输出电流。为此,连接导体与该功率半导体模块的相应的连接元件拧紧。
背景技术
所述拧紧通常通过如下方式来实现:连接元件的从模块外侧可到达的端部与壳体壁平行地被导向并且在该区域中配备有孔。所述孔安放在具有螺母的连接元件之下,该螺母放入壳体的凹处中。连接导体的相应的端子同样被穿孔并且借助螺栓与模块的连接元件拧紧,其方式是,螺栓被旋入螺母中。为了安装,因此必须首先将螺母放入在壳体处的凹处中并且使连接元件的配备有孔的端部越过所放入的螺母弯曲。于是,连接导体的孔必须正好适合地(passgenau)通过该连接元件的孔被定位,螺栓必须被引过两个孔并且与螺母拧紧。也许也还可能需要安置垫片,以便将螺栓的力均匀地传递到连接导体上。由于许多处理步骤,连接导体在功率半导体模块处的安装是非常耗费的并且因此成本高的。
此外,在拧紧区域内在连接导体和连接元件之间仅仅存在小的接触区,因此拧紧位置限制经过连接元件和连接导体的电流。同样地也相应地适用于热传导,因为在功率半导体模块中积累的运行热直至一定程度也通过其连接元件和连接在其上的连接导体被排出。
发明内容
本发明的任务在于,提供改善的功率半导体模块以及具有改善的功率半导体模块的功率半导体模块系统。该任务通过按照权利要求1的功率半导体模块以及通过按照权利要求15的功率半导体模块系统解决。本发明的扩展方案和改进方案是从属权利要求的主题。
按照本发明的功率半导体模块具有功率半导体芯片、导电连接元件、容纳区域、以及夹紧元件,该夹紧元件可以从第一位置被带入第二位置。当该夹紧元件处于其第一位置时,模块外部的连接导体的连接区域可以被导入容纳区域。于是,当夹紧元件从其第一位置被带入第二位置时,在连接区域和连接元件之间构造导电连接的情况下,该连接区域与功率半导体模块夹紧。由于该夹紧技术,可以取消连接导体和连接区域的穿孔,从而在传统功率半导体模块和模块外部的连接导体的情况下配备有孔的区域也可供在连接元件和连接区域之间的电和热接触使用。
预防性地指出,带有其容纳区域的连接导体不是功率半导体模块的组成部分。这种功率半导体模块与模块外部的连接导体一起构成功率半导体模块系统。
附图说明
下面参照附图借助实施例进一步阐述本发明。只要不另外说明,在图中相同的附图标记表示具有相同或类似功能的相同或类似的元件。其中:
图1A示出了具有坚固底板的功率半导体模块的纵断面。
图1B示出了功率半导体模块的片段的纵断面,其底板由金属化的陶瓷载体衬底构成。
图2示出了具有用于连接模块外部的连接导体的夹紧装置的功率半导体模块的片段的透视剖面图。
图3示出了模块外部的连接导体的片段的透视图,该连接导体可用于功率半导体模块的电连接。
图4示出了具有按照图3的所连接的模块外部的连接导体的按照图2的功率半导体模块的片段。
图5示出了固定地与功率半导体模块夹紧的模块外部的连接导体的透视图。
图6示出了功率半导体模块的夹紧装置的纵断面,其中在夹紧之前,模块外部的连接导体的连接区域被放入所述夹紧装置中。
图7示出了在夹紧期间按照图6的布置。
图8示出了在夹紧之后按照图6和7的布置。
图9示出了根据图6的布置,具有以下区别:夹紧装置是自锁的。
图10示出了在夹紧期间按照图9的布置。
图11示出了在夹紧之后按照图9和10的布置。
图12示出了夹紧钳口的透视图,如其可以被用于按照本发明的功率半导体模块的夹紧装置中一样。
图13示出了按照图12的夹紧钳口,将夹紧楔、对应楔(Gegenkeil)以及连接元件放入所述夹紧钳口中。
具体实施方式
借助图1A和1B首先示例地阐述功率半导体模块100的两个基本类型。但是功率半导体模块100的内部结构可以与此不同地来选择并且与要利用功率半导体模块100实现的电路匹配。
图1A示出了功率半导体模块100的纵断面。功率半导体模块100包括至少一个功率半导体芯片6,其中的每个布置在电路载体5上。在此,可以在电路载体5构建一个或多个功率半导体芯片6。功率半导体芯片例如可以是可控制的功率半导体开关,例如MOSFET、IGBT、J-FET或者晶闸管,或者是二极管。原则上,功率半导体模块100具有至少一个这样的功率半导体芯片6。
电路载体5具有绝缘载体50,该绝缘载体50配备有上金属化部51并且配备有下金属化部52。该绝缘载体50例如可以是陶瓷,例如氧化铝(Al2O3)、氮化铝(ALN)或者氮化硅(Si3N4)。上金属化部51和下金属化部52由良好导电的材料组成,例如铜、铝或具有这些金属中的至少之一的合金。电路载体5例如可以是DCB衬底(DCB=directcopperbonding,直接铜接合)或者是DAB衬底(DAB=directaluminiumbonding,直接铝接合)或者是AMB衬底(AMB=activmetalbrazing,活性金属钎焊)。功率半导体模块100可以不包括、正好包括一个但是或者多个这种电路载体5。
为了将功率半导体芯片6固定在电路载体5上并且与其上金属化部51导电连接,设置第一连接层71,该第一连接层例如可以是焊接层、尤其是扩散焊接层、具有导电粘合剂的粘合层或者是具有银的被烧结的连接层。功率半导体芯片6在其背离所涉及的电路载体5的上侧可以借助任意的连接技术导电地被接触并且与功率半导体模块100的其他组件导电连接。在按照图1A的所示实施例中,为此使用接合线7,所述接合线被接合至功率半导体芯片6的背离电路载体5的上侧以及至所涉及的电路载体5的上金属化部51的片段上。对接合线代替地或者补充地,也可以使用焊接或者接合的金属带或者薄片。同样存在如下可能性:通过与功率半导体芯片的上侧和/或与上金属化部51的片段压力接触来制造导电连接。
此外,如由按照图1A的例子可以看出的,为了功率半导体模块100的内部布线可以设置可选的轨道(Verschienung)11,它们可以与功率半导体芯片6中的确定的功率半导体芯片导电连接。这些轨道11具有连接区域11a,其用于功率半导体模块100的外部电接触。为此,所述连接区域从包括框架和盖的壳体3的外侧可以达到。
在装配有功率半导体芯片6的电路载体5上方,可以可选地布置电路板10,其至少可以被用于后面阐述的目的。一种可能的应用目的在于,控制导线和/或信号导线,也即同与功率半导体模块100连接的负载电流相比比较小的电流流经的导线,从电路载体5分接并且通过电路板10重新接线(umverdrahten)并且借助另外的连接元件10a被引导至功率半导体模块100的外侧。可选地,可以在电路板10上设置另外的电子器件,例如操纵和/或监控电子装置用于操纵或监控功率半导体芯片6。通过相应的连接元件10a也可以对功率半导体模块100输送外部信号,例如用于操纵可控制的功率半导体芯片6。
为了在功率半导体模块100运行时确保在功率半导体模块100内部中的电绝缘和避免在强烈不同电势的元件之间的电击穿,模块内部空间可以完全或者部分地用软浇注材料12(例如硅胶)浇注。在此,软浇注材料12至少从底板2延伸至整个功率半导体芯片6上。在软浇注材料12上方此外可以设置可选的硬浇注材料13,例如浇注树脂,其此外使电路板10和/或轨道稳定。
本功率半导体模块100是具有坚固底板2的功率半导体模块,在该底板上布置装配有功率半导体芯片6的电路载体5。这样的坚固底板2例如可以具有在2mm至5mm范围中的厚度。作为底板2的材料,使用例如良好导热的金属,如铜或铜合金或铝或铝合金。同样可以使用金属基复合材料(Metall-Matrix-Komposite)(MMC),例如碳化硅铝(AlSiC)。
装配的电路载体5可以在其下金属化部52处借助第二连接层72与底板2连接。第二连接层72例如可以是焊接层,尤其是扩散焊接层、粘合层或者是具有银的烧结层。底板2用于将在功率半导体芯片6中积累的运行热通过散热接触面2a排出至可与该散热接触面接触的冷却体(未示出)。为此,实现从功率半导体芯片6出发经过所涉及的第一连接层71、所涉及的电路载体5、所涉及的第二连接层72和底板2的热流。为了实现底板2的尽可能小的热阻,有利的是,所述底板由良好传导的材料组成,例如铜或具有至少90重量百分比(Gew%)的铜分量的铜合金。但是底板2也可以由铝或铝合金组成,其可选地可以具有涂层,例如以便在应当将底板的朝向电路载体5的上侧2b与电路载体5的下金属化部52焊接或烧结时,改善可焊接性。在焊接连接的情况下,例如镍涂层适用于烧结连接,由贵金属(例如银或金)制成的涂层。底板2的厚度例如可以处于2mm至5mm的范围中。绝缘载体50的厚度例如可以为0.25mm至1mm,上金属化部51的厚度例如为0.2mm至0.5mm,下金属化部52的厚度例如为0.2mm至0.5mm。所述值在此可以彼此无关地选择并且以任意方式相互组合。
图1B示出所谓的“无底板”功率半导体模块100的纵断面。其结构基本相应于借助图1A阐述的模块100。与该模块100的区别仅仅在于:不设置坚固的金属底板2,而是设置电路载体5,该电路载体5的结构可以相应于借助图1A阐述的电路载体5的结构并且它是功率半导体模块100的底板。尤其是,电路载体5的下金属化部52的背离功率半导体芯片6的下侧5a构成功率半导体模块100的散热接触面5a,其可以与冷却体(未示出)接触。
不仅在按照图1A的功率半导体模块100情况下而且在按照图1B的功率半导体模块100的情况下,可以借助导热膏进行冷却体到散热接触面2a或者5a的耦合,所述导热膏被平面地引入冷却体和所涉及的散热接触面2a或5a之间。
为了将如借助图1A和1B示例性阐述的功率半导体模块100导电地连接到供给电压或连接到负载上,功率半导体模块100的连接元件11a可以配备有夹紧装置8,如其在图1A中放大地示出的一样。下面借助实施例进一步阐述这种夹紧装置8的可能的扩展方案。图2示出了功率半导体模块的壳体盖3的放大的片段,在其中放入夹紧装置8。夹紧装置8包括夹紧元件81(所述夹紧元件81示例地被构造为夹紧楔)、可选的对应楔82、可选的螺栓83、以及同样可选的夹紧钳口84。从模块内侧出发的连接元件11a延伸至少直至夹紧楔81的高度,其中连接元件11a例如可以与功率半导体芯片6导电连接。在连接元件11a和夹紧钳口84之间保留容纳区域80,在该容纳区域中可以放入在图3中所示的模块外部的连接导体200的连接区域201,并且接着在构造导电接触的情况下可以与连接元件11a夹紧。图4以剖视图示出了在其与图3中示出的外部的连接导体200连接之后功率半导体模块100的在图2中示出的片段,图4以透视俯视图示出。
按照图3的连接导体200具有平坦的连接区域201,该连接区域不配备如这在传统连接导体的情况下那样的通孔。因此,连接区域201的整个面可供与连接元件11a的电接触使用。相应地,连接元件11a在其为了与连接区域201接触而使用的端部处也不必具有通孔。由此,可以相对于传统布置显著减少在连接区域201和连接元件11a之间的电以及热累接电阻(übergangswiderstand)。
如借助图3可以识别的,可以通过如下方式产生模块外部的连接导体200的连接区域201,即在薄片的基本上平的片段中将稍后的连接区域201相对于平的区域弯曲预给定的角度,例如90o,使得形成从平的片段202翘起的连接凸起部,其构成连接区域201。此外,稍后的连接区域201在弯曲之前可以从剩余的平的片段202分离,这例如可以通过冲压、通过激光切割或者通过喷水切割来进行。在所示的例子中,在薄片200的内部区域中的连接区域201从平的片段202分离。但是与此不同地,连接区域201也可以处于连接导体200的端部,从而连接导体220不具有连接区域201在弯曲之后留下的开口。
图6示出了夹紧装置8的纵断面,借助该夹紧装置,功率半导体模块100的连接元件11a和模块外部的连接导体200的连接区域201在构造导电连接的情况下被彼此夹紧。图6示出了在夹紧之前的布置。构造为夹紧楔的夹紧元件81具有穿通部81a,其中配备有螺纹83a的螺栓可以穿过该穿通部。对应楔82包括内螺纹82d以及可选的穿通部82a。当螺栓83穿过直通区域81a时,使螺栓83的螺纹83a与内螺纹82d协调并且能够旋入所述内螺纹中。
在图6中,夹紧元件81处于第一位置,也即能够实现将连接导体200的连接区域201导入夹紧装置8的容纳区域80的位置。于是如果螺栓83可选地在使用垫片85的情况下穿过直通区域81a并且旋入内螺纹82d,则夹紧元件81(如图7中借助两个黑箭头示出的那样)基于夹紧元件81和对应楔82的几何结构而在对应楔82的方向上以及在连接元件11a和连接区域201的方向上运动,从而如结果在图8中所示,连接元件11a和连接区域201在夹紧元件81和夹紧钳口84之间在构造导电连接的情况下相互夹紧。在夹紧之后,夹紧元件81处于第二位置。为了能够实现夹紧元件81相对对应楔82的移动,穿通部81a的宽度被选择得大于螺栓83的螺栓杆的直径。
夹紧元件81具有背离对应楔82的第一侧面81b以及朝向对应楔82的第一滑动面81c。相应地,对应楔82具有背离夹紧元件81的第二侧面82b以及朝向夹紧元件81的第二滑动面82c。第一侧面81b和第一滑动面81c可以围成第一角度。在此情况下,第一侧面81b和/或第一滑动面81c可以被构造为平的或者基本上平的面。
相应地,第二侧面82b和第二滑动面82c可以围成第二角度,其可以大于、小于或等于第一角度。第二侧面82b和/或第二滑动面82c也可以被构造为平的或者基本上平的。第一角度和/或第二角度可以基本上任意地、例如在10o至40o的范围中选择。
为了在连接元件11a和连接区域201之间实现尽可能均匀的接触,如果第一滑动面81c和第二滑动面82c相互贴靠,则第一夹紧元件81的朝向连接元件11a的第一侧面81b平行或基本平行于夹紧钳口84的侧面84b伸展,其中这样选择侧面84b,使得连接元件11a布置在其和夹紧元件81之间。
在按照图6至8的例子中,连接元件11a布置在一方面容纳区域80或连接区域201与另一方面夹紧元件81之间。但是,代替地,容纳区域80或连接区域201也可以处于连接元件11a和夹紧元件81之间。
图9至11示出了夹紧装置8的另一扩展方案。该夹紧装置8不同于借助图8至10所阐述的夹紧装置8在于,其是自夹紧的,也即其不具有固定螺栓,其中夹紧元件81借助该固定螺栓被固定在其第二位置中。更确切地说,夹紧元件81的夹持仅仅借助夹紧元件81的静摩擦来进行。为了实现夹紧作用,夹紧元件81仅仅在对应楔82的方向上移动,直至达到所希望的夹紧作用。为了实现自夹紧效果,角度被选择得非常小,该角度可以例如被选择得大于0o且小于或等于6o。图9示出了夹紧元件81在其第一位置,图11示出了夹紧元件在其第二位置。
图12示出了夹紧钳口84,如其例如可以在前述夹紧装置8中所使用的。由于基本上没有电流流过夹紧钳口84,因此该夹紧钳口可以由在其机械强度方面而不在其电阻方面被优化的材料制造,也即夹紧钳口84可以由具有例如超过200HV的大维氏硬度的材料制造。夹紧钳口84的材料因此可以具有大于连接元件11a的硬度的硬度,只要其在制造功率半导体模块100时是已知的,也大于连接区域201的硬度。例如铜或铜合金或铝或铝合金适合作为连接元件11a和/或连接区域201用的材料。
如同样在图12中所示,夹紧钳口84可以被构造为环。夹紧钳口例如可以由薄片冲压,并且被弯曲成环。为了防止在连接元件11a与连接区域201a夹紧期间环向上弯曲,夹紧钳口84的端部84a可以与夹紧钳口84的另外的端部84b钩住。
图13示出了在放入夹紧元件81、对应楔82、螺栓83以及连接元件11a之后的按照图12的夹紧钳口84。在相应于图6至8和13的夹紧装置8中,螺栓83、必要时与垫片85结合地可以穿过夹紧元件81的穿通部81a并且部分地旋入对应楔82的内螺纹82中,使得这些元件永恒地相互连接并且可以作为一个单元被放入夹紧钳口84中然而或者与夹紧钳口84无关地放入模块壳体3的相应的容纳区域中。在此情况下,仅仅要注意的是:连接元件11a在正确的位置被导入夹紧元件81和夹紧钳口84之间。为了确保永恒性,如在图6至8中所示的夹紧元件81必须或者被构造为包围穿通部81a的封闭环而或者被构造为具有间隙的开放环,所述间隙的宽度小于螺栓83的杆的直径。
之后,可以将模块外部的连接导体200以其连接区域201导入容纳区域80中并且如借助图6至8所阐述地与连接元件11a导电接触。
在前述的实施例中,夹紧钳口84和对应楔82被构造为单独的元件。但是,对此代替地,对应楔82和夹紧钳口84也可以一件式地被构造,或者例如通过拧紧、焊封或焊接固定地相互连接。只要功率半导体模块100的壳体3具有足够的稳定性,此外可以取消单独的夹紧钳口。在这种情况下,模块壳体3承担夹紧钳口的功能。
如果设置夹紧钳口84,则该夹紧钳口可以被放入在壳体3处的准备的凹陷或凹处中。对此代替地,夹紧钳口也可以在制造壳体3时被喷射或者注入到该壳体中。夹紧元件81和/或对应楔82可以事后被放入预先装配有夹紧钳口84的壳体3中,但是或者作为组合的单元,该单元除了夹紧元件81和对应楔82也包括夹紧钳口84以及可选地包括连接螺栓83。如果设置连接螺栓83,则夹紧元件81和对应楔82也可以利用该连接螺栓83也在将单元放入凹处或凹陷之前可消失地或者永恒地相互拧紧。
Claims (17)
1.功率半导体模块,具有导电的连接元件(11a)、容纳区域(80)以及具有夹紧元件(81),所述夹紧元件能够从第一位置被带入第二位置,其中
当夹紧元件(81)处于第一位置时,模块外部的连接导体(200)的连接区域(201)能够被导入容纳区域(80);
只要这种连接区域(201)被导入容纳区域(80),模块外部的连接导体(200)的连接区域(201)在构造连接区域(201)和连接元件(11a)之间的导电连接的情况下可与功率半导体模块(100)夹紧,其方式是夹紧元件(81)通过以下方式从第一位置被带入第二位置,即夹紧元件(81)基于夹紧元件(81)和对应元件(82)的几何结构而在对应元件(82)的方向上以及在连接元件(11a)和连接区域(201)的方向上运动。
2.根据权利要求1所述的功率半导体模块,其中,夹紧元件(81)被构造为夹紧楔。
3.根据权利要求2所述的功率半导体模块,具有对应楔(82),其中
夹紧楔(81)具有背离对应楔(82)的第一侧面(81b)以及朝向对应楔(82)的第一滑动面(81c);
对应楔(82)具有背离夹紧楔(81)的第二侧面(82b)以及朝向夹紧楔(81)的第二滑动面(82c)。
4.根据权利要求3所述的功率半导体模块,其中,第一侧面(81b)和第一滑动面(81c)围成在0o至6o范围中或在10o至40o范围中的第一角度()。
5.根据权利要求4所述的功率半导体模块,其中,第二侧面(82b)和第二滑动面(82c)围成等于第一角度()的第二角度()。
6.根据权利要求3至5之一所述的功率半导体模块,其中夹紧楔(81)被构造为自保持的,并且该功率半导体模块除了第二滑动面(82c)外不具有保持装置,所述保持装置被构造用于将夹紧楔(81)保持在第二位置中。
7.根据权利要求1至5之一所述的功率半导体模块,具有拧紧装置(83),借助其能够将夹紧元件(81)从第一位置带入第二位置并且持久地保持在第二位置。
8.根据权利要求1至5之一所述的功率半导体模块,具有夹紧钳口(84),其中当夹紧元件(81)处于第二位置时,只要这种连接区域(201)被导入容纳区域(80),模块外部的连接导体(200)的连接区域201借助夹紧元件(81)被压向夹紧钳口(84)。
9.根据权利要求8所述的功率半导体模块,其中夹紧钳口(84)具有超过200HV的维氏硬度。
10.根据权利要求8所述的功率半导体模块,其中夹紧钳口(84)被构造为弯曲的薄片。
11.根据权利要求10所述的功率半导体模块,其中夹紧钳口(84)由薄片条构成,其弯曲成环并且其端部彼此钩住。
12.根据权利要求1至5之一所述的功率半导体模块,其中容纳区域(80)在至少一侧上通过连接元件(11a)限制,从而当模块外部的连接导体(200)的连接区域(201)被导入容纳区域(80)并且夹紧元件(81)处于第二位置时,连接元件(11a)直接接触连接区域(201)。
13.根据权利要求1至5之一所述的功率半导体模块,具有载体(2,5),在所述载体上布置至少一个功率半导体芯片(6),以及具有壳体(3),其中
载体(2,5)在其背离功率半导体芯片(6)的侧上具有散热接触面(2a,5a);
夹紧元件(81)布置在壳体(3)的背离散热接触面(2a,5a)的侧处。
14.根据权利要求13所述的功率半导体模块,具有陶瓷衬底(5),所述陶瓷衬底具有带有上金属化层(51)和下金属化层(52)的陶瓷小板(50),其中功率半导体芯片(6)布置在上金属化层(51)上,其中
或者散热接触面(2a,5a)通过下金属化层(5a)的背离陶瓷小板(50)的侧来给定;
或者下金属化部(52)平面地与金属底板(2)连接,所述底板的背离陶瓷小板(50)的侧构成散热接触面(2a)。
15.功率半导体模块系统,具有
根据上述权利要求之一所述的功率半导体模块(100);
模块外部的连接导体(200),其具有连接区域(201);
其中连接导体(200)能够通过如下方式与功率半导体模块(100)夹紧并且在此与连接接触(201)导电连接:即当夹紧元件(81)处于第一位置时,连接区域(201)被导入容纳区域(80),并且夹紧元件(81)接着从第一位置被带入第二位置。
16.根据权利要求15所述的功率半导体模块系统,其中
模块外部的连接导体(200)由薄片条构成;
连接区域(201)通过连接导体(200)的弯曲的片段给定。
17.根据权利要求15或16所述的功率半导体模块系统,其中连接区域(201)不具有通孔。
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DE102013110818A1 (de) * | 2013-09-30 | 2015-04-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
JP6057016B2 (ja) * | 2014-03-19 | 2017-01-11 | 富士電機株式会社 | 半導体装置及びその製造方法 |
DE102014111995B4 (de) * | 2014-08-21 | 2022-10-13 | Infineon Technologies Ag | Verfahren zum ergreifen, zum bewegen und zum elektrischen testen eines halbleitermoduls |
US10020641B1 (en) * | 2016-12-22 | 2018-07-10 | Hamilton Sundstrand Corporation | Resistance-limited electrical interconnects |
JP7047682B2 (ja) * | 2018-09-13 | 2022-04-05 | 株式会社デンソー | 回転電機、その固定子、および回転電機の製造方法 |
CN110752454A (zh) * | 2019-10-08 | 2020-02-04 | 陈懿 | 一种电力线连接装置及其操作方法 |
CN114204361A (zh) * | 2021-11-17 | 2022-03-18 | 袁平 | 一种叠层母排 |
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US8848381B2 (en) | 2014-09-30 |
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CN102790029A (zh) | 2012-11-21 |
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