FR3030877B1 - Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant - Google Patents

Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant Download PDF

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Publication number
FR3030877B1
FR3030877B1 FR1563137A FR1563137A FR3030877B1 FR 3030877 B1 FR3030877 B1 FR 3030877B1 FR 1563137 A FR1563137 A FR 1563137A FR 1563137 A FR1563137 A FR 1563137A FR 3030877 B1 FR3030877 B1 FR 3030877B1
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France
Prior art keywords
layer
mesa
monocrystalline semiconductor
micrometers
monocrystalline
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FR1563137A
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English (en)
French (fr)
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FR3030877A1 (https=
Inventor
Gang Wang
Michael R Seacrist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
SunEdison Semiconductor Pty Ltd
GlobalWafers Co Ltd
SunEdison Semiconductor Ltd
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Publication of FR3030877A1 publication Critical patent/FR3030877A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut

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  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
FR1563137A 2014-12-22 2015-12-22 Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant Active FR3030877B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462095282P 2014-12-22 2014-12-22
US62095282 2014-12-22

Publications (2)

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FR3030877A1 FR3030877A1 (https=) 2016-06-24
FR3030877B1 true FR3030877B1 (fr) 2019-11-08

Family

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Family Applications (2)

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FR1563137A Active FR3030877B1 (fr) 2014-12-22 2015-12-22 Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant
FR1911190A Active FR3087045B1 (fr) 2014-12-22 2019-10-09 Fabrication de couches de nitrure de groupe IIIA sur structures de semi-conducteur sur isolant

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1911190A Active FR3087045B1 (fr) 2014-12-22 2019-10-09 Fabrication de couches de nitrure de groupe IIIA sur structures de semi-conducteur sur isolant

Country Status (3)

Country Link
US (2) US10262855B2 (https=)
FR (2) FR3030877B1 (https=)
WO (1) WO2016106231A1 (https=)

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US9768271B2 (en) * 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
WO2016106231A1 (en) * 2014-12-22 2016-06-30 Sunedison Semiconductor Limited Manufacture of group iiia-nitride layers on semiconductor on insulator structures
US10302864B2 (en) * 2016-06-02 2019-05-28 Ohio State Innovation Foundation Method of forming a deterministic thin film from a crystal substrate by etching a bilayer bonding interface to create a channel
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
JP2020513681A (ja) * 2016-11-11 2020-05-14 キューエムエイティ・インコーポレーテッド 層転写によるマイクロ発光ダイオード（ｌｅｄ）製造
KR102614121B1 (ko) * 2016-11-24 2023-12-14 현대자동차주식회사 클러치
CN109273526B (zh) * 2018-10-24 2024-06-14 江西华讯方舟智能技术有限公司 一种高性能晶体管及其制造方法
CN111362701B (zh) * 2018-12-25 2022-01-07 比亚迪股份有限公司 一种碳化硅晶块的制备装置、碳化硅晶块及其制备方法
JP7692638B2 (ja) * 2021-04-16 2025-06-16 テクタス コーポレイション 窒化ガリウム発光ダイオード用のシリコン二重ウェーハ基板
JP7295351B1 (ja) * 2021-09-22 2023-06-20 日本碍子株式会社 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

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JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
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US8236638B2 (en) * 2007-04-18 2012-08-07 Freescale Semiconductor, Inc. Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
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Also Published As

Publication number Publication date
FR3087045B1 (fr) 2023-02-24
FR3030877A1 (https=) 2016-06-24
FR3087045A1 (fr) 2020-04-10
WO2016106231A1 (en) 2016-06-30
US20180005815A1 (en) 2018-01-04
US10262855B2 (en) 2019-04-16
US10796905B2 (en) 2020-10-06
US20190206675A1 (en) 2019-07-04

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