FR2710191B1 - MOSFET de puissance avec protection de sur-intensité et de surchauffe. - Google Patents

MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Info

Publication number
FR2710191B1
FR2710191B1 FR9410966A FR9410966A FR2710191B1 FR 2710191 B1 FR2710191 B1 FR 2710191B1 FR 9410966 A FR9410966 A FR 9410966A FR 9410966 A FR9410966 A FR 9410966A FR 2710191 B1 FR2710191 B1 FR 2710191B1
Authority
FR
France
Prior art keywords
overcurrent
power mosfet
overheating protection
overheating
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9410966A
Other languages
English (en)
Other versions
FR2710191A1 (fr
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to FR9503344A priority Critical patent/FR2717323B1/fr
Publication of FR2710191A1 publication Critical patent/FR2710191A1/fr
Application granted granted Critical
Publication of FR2710191B1 publication Critical patent/FR2710191B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
FR9410966A 1993-09-14 1994-09-14 MOSFET de puissance avec protection de sur-intensité et de surchauffe. Expired - Fee Related FR2710191B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9503344A FR2717323B1 (fr) 1993-09-14 1995-03-22 MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/121,288 US5497285A (en) 1993-09-14 1993-09-14 Power MOSFET with overcurrent and over-temperature protection

Publications (2)

Publication Number Publication Date
FR2710191A1 FR2710191A1 (fr) 1995-03-24
FR2710191B1 true FR2710191B1 (fr) 1997-12-19

Family

ID=22395719

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9410966A Expired - Fee Related FR2710191B1 (fr) 1993-09-14 1994-09-14 MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Country Status (5)

Country Link
US (1) US5497285A (fr)
JP (1) JP2731119B2 (fr)
FR (1) FR2710191B1 (fr)
GB (1) GB2281815B (fr)
SG (3) SG47907A1 (fr)

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* Cited by examiner, † Cited by third party
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DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninkl Philips Electronics Nv Halbleiter-Leistungsschaltung
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
DE4444623A1 (de) * 1994-12-14 1996-06-27 Siemens Ag Schaltungsanordnung zur Laststromregelung eines Leistungs-MOSFET
US5563759A (en) * 1995-04-11 1996-10-08 International Rectifier Corporation Protected three-pin mosgated power switch with separate input reset signal level
JP3663258B2 (ja) * 1995-09-11 2005-06-22 株式会社ルネサステクノロジ 制御回路内蔵絶縁ゲート型半導体装置
JP3544592B2 (ja) * 1995-11-09 2004-07-21 株式会社ルネサステクノロジ 制御回路内蔵絶縁ゲート型半導体装置
US5761020A (en) * 1996-01-29 1998-06-02 International Rectifier Corporation Fast switching smartfet
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
JPH1014099A (ja) * 1996-06-21 1998-01-16 Nec Corp 過電流検出回路
EP0822661A3 (fr) * 1996-08-02 1999-11-24 Siemens Aktiengesellschaft Circuit d'attaque pour un dispositif semi-conducteur de puissance commandé par effet de champ
JP3884849B2 (ja) * 1996-12-25 2007-02-21 株式会社ルネサステクノロジ 制御回路内蔵絶縁ゲート型半導体装置
JPH10215160A (ja) * 1997-01-31 1998-08-11 Matsushita Electric Ind Co Ltd 保護機能付半導体スイッチング回路および溶接機および切断機
SG55452A1 (en) * 1997-02-12 1998-12-21 Int Rectifier Corp Method and circuit to sense the tj of mos-gated power semi conductor devices
DE19722300A1 (de) * 1997-05-28 1998-12-03 Bosch Gmbh Robert Übertemperatur-Schutzschaltung
DE19817790A1 (de) * 1998-04-21 1999-12-09 Siemens Ag Verpolschutzschaltung
US6055149A (en) * 1998-12-02 2000-04-25 Intersil Corporation Current limited, thermally protected, power device
US6388853B1 (en) 1999-09-28 2002-05-14 Power Integrations, Inc. Method and apparatus providing final test and trimming for a power supply controller
US6583972B2 (en) 2000-06-15 2003-06-24 Sarnoff Corporation Multi-finger current ballasting ESD protection circuit and interleaved ballasting for ESD-sensitive circuits
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
JP2002100735A (ja) * 2000-09-22 2002-04-05 Mitsubishi Electric Corp 半導体集積回路および半導体集積回路システム
WO2002084745A2 (fr) * 2001-04-11 2002-10-24 Silicon Wireless Corporation Dispositifs semi-conducteurs de puissance presentant des zones ecran de base s'etendant lateralement qui empechent de traverser la base et procedes de fabrication associes
US6891705B2 (en) * 2002-02-08 2005-05-10 Tyco Electronics Corporation Smart solid state relay
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
JP4250412B2 (ja) * 2002-12-13 2009-04-08 三菱電機株式会社 半導体装置
WO2006050568A1 (fr) * 2004-11-12 2006-05-18 Fultec Semiconductor Inc. Dispositif de protection de surtension
US7521985B2 (en) * 2005-07-01 2009-04-21 Semiconductor Components Industries, L.L.C. Method for regulating temperature and circuit therefor
US7468874B1 (en) 2005-11-08 2008-12-23 Yazaki North America, Inc. Protection circuit for digital power module
US7607828B2 (en) * 2006-09-22 2009-10-27 Infineon Technologies Ag Methods and systems for protection from over-stress
KR20090049008A (ko) * 2007-11-12 2009-05-15 한국전자통신연구원 금속-절연체 전이（ｍｉｔ）소자를 이용한 트랜지스터발열제어 회로 및 그 발열제어 방법
JP5124292B2 (ja) * 2008-01-10 2013-01-23 ルネサスエレクトロニクス株式会社 電力スイッチ回路
TWI405380B (zh) * 2009-12-22 2013-08-11 Delta Electronics Inc 過電壓與過溫度偵測電路
JP5868834B2 (ja) 2012-11-28 2016-02-24 株式会社東芝 半導体装置
US10692774B2 (en) 2015-12-28 2020-06-23 Rohm Co., Ltd. Semiconductor device
US10833668B2 (en) * 2019-03-07 2020-11-10 Analog Devices International Unlimited Company Integrated and distributed over temperature protection for power management switches

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482800A1 (fr) * 1980-05-14 1981-11-20 Thomson Csf Mat Tel Dispositif de protection d'un amplificateur de puissance, et emetteur comportant un tel dispositif
EP0090280A3 (fr) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Dispositif semi-conducteur intégré et son procédé de fabrication
EP0107137B1 (fr) * 1982-10-12 1986-10-01 Nissan Motor Co., Ltd. Circuit de commutation à semi-conducteurs avec protection contre les courants excessifs
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
DE3936544A1 (de) * 1988-12-21 1990-06-28 Siemens Ag Schaltungsanordnung zum schutz eines leistungs-mosfet
JP3008484B2 (ja) * 1990-11-13 2000-02-14 日本電気株式会社 保護回路
JP3018816B2 (ja) * 1993-02-22 2000-03-13 株式会社日立製作所 半導体素子の保護回路ならびにこれを有する半導体装置
US5398148A (en) * 1993-05-14 1995-03-14 Chrysler Corporation Protection circuit for high side drivers

Also Published As

Publication number Publication date
JPH07176733A (ja) 1995-07-14
US5497285A (en) 1996-03-05
GB9418179D0 (en) 1994-10-26
GB2281815B (en) 1996-08-28
FR2710191A1 (fr) 1995-03-24
SG48810A1 (en) 1998-05-18
JP2731119B2 (ja) 1998-03-25
SG47907A1 (en) 1998-04-17
GB2281815A (en) 1995-03-15
SG52440A1 (en) 1998-09-28

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