GB2281815B - Power mosfet with overcurrent and over-temperature protection - Google Patents

Power mosfet with overcurrent and over-temperature protection

Info

Publication number
GB2281815B
GB2281815B GB9418179A GB9418179A GB2281815B GB 2281815 B GB2281815 B GB 2281815B GB 9418179 A GB9418179 A GB 9418179A GB 9418179 A GB9418179 A GB 9418179A GB 2281815 B GB2281815 B GB 2281815B
Authority
GB
United Kingdom
Prior art keywords
overcurrent
over
power mosfet
temperature protection
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9418179A
Other versions
GB9418179D0 (en
GB2281815A (en
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to GB9516278A priority Critical patent/GB2291742B/en
Priority to GB9516279A priority patent/GB2291743B/en
Publication of GB9418179D0 publication Critical patent/GB9418179D0/en
Publication of GB2281815A publication Critical patent/GB2281815A/en
Application granted granted Critical
Publication of GB2281815B publication Critical patent/GB2281815B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
GB9418179A 1993-09-14 1994-09-09 Power mosfet with overcurrent and over-temperature protection Expired - Fee Related GB2281815B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9516278A GB2291742B (en) 1993-09-14 1994-09-09 Power MOS-gated device with over-temperature protection
GB9516279A GB2291743B (en) 1993-09-14 1994-09-09 Power MOS-gated device with overcurrent and over-temperature protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/121,288 US5497285A (en) 1993-09-14 1993-09-14 Power MOSFET with overcurrent and over-temperature protection

Publications (3)

Publication Number Publication Date
GB9418179D0 GB9418179D0 (en) 1994-10-26
GB2281815A GB2281815A (en) 1995-03-15
GB2281815B true GB2281815B (en) 1996-08-28

Family

ID=22395719

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9418179A Expired - Fee Related GB2281815B (en) 1993-09-14 1994-09-09 Power mosfet with overcurrent and over-temperature protection

Country Status (5)

Country Link
US (1) US5497285A (en)
JP (1) JP2731119B2 (en)
FR (1) FR2710191B1 (en)
GB (1) GB2281815B (en)
SG (3) SG52440A1 (en)

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EP0631390B1 (en) * 1993-06-22 1999-09-01 Philips Electronics Uk Limited A power semiconductor circuit
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
DE4444623A1 (en) * 1994-12-14 1996-06-27 Siemens Ag Power MOSFET load current control circuit
US5563759A (en) * 1995-04-11 1996-10-08 International Rectifier Corporation Protected three-pin mosgated power switch with separate input reset signal level
JP3663258B2 (en) * 1995-09-11 2005-06-22 株式会社ルネサステクノロジ Insulated gate semiconductor device with built-in control circuit
JP3544592B2 (en) * 1995-11-09 2004-07-21 株式会社ルネサステクノロジ Insulated gate semiconductor device with built-in control circuit
US5761020A (en) * 1996-01-29 1998-06-02 International Rectifier Corporation Fast switching smartfet
JP3036423B2 (en) * 1996-02-06 2000-04-24 日本電気株式会社 Semiconductor device
JPH1014099A (en) * 1996-06-21 1998-01-16 Nec Corp Overcurrent detecting circuit
EP0822661A3 (en) * 1996-08-02 1999-11-24 Siemens Aktiengesellschaft Drive circuit for a field effect controlled power semiconductor device
JP3884849B2 (en) * 1996-12-25 2007-02-21 株式会社ルネサステクノロジ Insulated gate semiconductor device with built-in control circuit
JPH10215160A (en) * 1997-01-31 1998-08-11 Matsushita Electric Ind Co Ltd Semiconductor switching circuit with protection function, welding machine and cutting machine
SG55452A1 (en) * 1997-02-12 1998-12-21 Int Rectifier Corp Method and circuit to sense the tj of mos-gated power semi conductor devices
DE19722300A1 (en) * 1997-05-28 1998-12-03 Bosch Gmbh Robert Overtemperature protection circuit
DE19817790A1 (en) * 1998-04-21 1999-12-09 Siemens Ag Reverse polarity protection circuit
US6055149A (en) * 1998-12-02 2000-04-25 Intersil Corporation Current limited, thermally protected, power device
US6388853B1 (en) * 1999-09-28 2002-05-14 Power Integrations, Inc. Method and apparatus providing final test and trimming for a power supply controller
US6583972B2 (en) 2000-06-15 2003-06-24 Sarnoff Corporation Multi-finger current ballasting ESD protection circuit and interleaved ballasting for ESD-sensitive circuits
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
JP2002100735A (en) * 2000-09-22 2002-04-05 Mitsubishi Electric Corp Semiconductor ic and semiconductor ic system
EP1396030B1 (en) * 2001-04-11 2011-06-29 Silicon Semiconductor Corporation Vertical power semiconductor device and method of making the same
US6891705B2 (en) * 2002-02-08 2005-05-10 Tyco Electronics Corporation Smart solid state relay
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
JP4250412B2 (en) * 2002-12-13 2009-04-08 三菱電機株式会社 Semiconductor device
US7768761B2 (en) 2004-11-12 2010-08-03 Bourns, Inc. Surge protection device
US7521985B2 (en) * 2005-07-01 2009-04-21 Semiconductor Components Industries, L.L.C. Method for regulating temperature and circuit therefor
US7468874B1 (en) 2005-11-08 2008-12-23 Yazaki North America, Inc. Protection circuit for digital power module
US7607828B2 (en) * 2006-09-22 2009-10-27 Infineon Technologies Ag Methods and systems for protection from over-stress
KR20090049008A (en) * 2007-11-12 2009-05-15 한국전자통신연구원 Circuit and method for controlling radiant heat of transistor using metal-insulator transition(mit) device
JP5124292B2 (en) * 2008-01-10 2013-01-23 ルネサスエレクトロニクス株式会社 Power switch circuit
TWI405380B (en) * 2009-12-22 2013-08-11 Delta Electronics Inc Over voltage and over temperature detection circuit
JP5868834B2 (en) 2012-11-28 2016-02-24 株式会社東芝 Semiconductor device
JP6498787B2 (en) 2015-12-28 2019-04-10 ローム株式会社 Semiconductor device
US10833668B2 (en) * 2019-03-07 2020-11-10 Analog Devices International Unlimited Company Integrated and distributed over temperature protection for power management switches

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090280A2 (en) * 1982-03-25 1983-10-05 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
EP0107137A1 (en) * 1982-10-12 1984-05-02 Nissan Motor Co., Ltd. A semiconductor switching circuit with an overcurrent protection

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482800A1 (en) * 1980-05-14 1981-11-20 Thomson Csf Mat Tel Transistor power amplifier overload protector - is integrable on same substrate and consists of input shunting transistor switched by AND=gate connected to output and inverted input
JPH0693485B2 (en) * 1985-11-29 1994-11-16 日本電装株式会社 Semiconductor device
JPH01147854A (en) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd Semiconductor device
DE3936544A1 (en) * 1988-12-21 1990-06-28 Siemens Ag Protection circuit for power MOSFET - has switch across gate-source and responsive to drain and input voltages
JP3008484B2 (en) * 1990-11-13 2000-02-14 日本電気株式会社 Protection circuit
JP3018816B2 (en) * 1993-02-22 2000-03-13 株式会社日立製作所 Semiconductor element protection circuit and semiconductor device having the same
US5398148A (en) * 1993-05-14 1995-03-14 Chrysler Corporation Protection circuit for high side drivers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090280A2 (en) * 1982-03-25 1983-10-05 Nissan Motor Co., Ltd. Semiconductor integrated circuit device and method of making the same
EP0107137A1 (en) * 1982-10-12 1984-05-02 Nissan Motor Co., Ltd. A semiconductor switching circuit with an overcurrent protection

Also Published As

Publication number Publication date
GB9418179D0 (en) 1994-10-26
GB2281815A (en) 1995-03-15
SG52440A1 (en) 1998-09-28
FR2710191A1 (en) 1995-03-24
SG48810A1 (en) 1998-05-18
US5497285A (en) 1996-03-05
JPH07176733A (en) 1995-07-14
FR2710191B1 (en) 1997-12-19
SG47907A1 (en) 1998-04-17
JP2731119B2 (en) 1998-03-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040909