GB2291743B - Power MOS-gated device with overcurrent and over-temperature protection - Google Patents

Power MOS-gated device with overcurrent and over-temperature protection

Info

Publication number
GB2291743B
GB2291743B GB9516279A GB9516279A GB2291743B GB 2291743 B GB2291743 B GB 2291743B GB 9516279 A GB9516279 A GB 9516279A GB 9516279 A GB9516279 A GB 9516279A GB 2291743 B GB2291743 B GB 2291743B
Authority
GB
United Kingdom
Prior art keywords
overcurrent
over
temperature protection
power mos
gated device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9516279A
Other versions
GB2291743A (en
GB9516279D0 (en
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/121,288 external-priority patent/US5497285A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB9516279D0 publication Critical patent/GB9516279D0/en
Publication of GB2291743A publication Critical patent/GB2291743A/en
Application granted granted Critical
Publication of GB2291743B publication Critical patent/GB2291743B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
GB9516279A 1993-09-14 1994-09-09 Power MOS-gated device with overcurrent and over-temperature protection Expired - Fee Related GB2291743B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/121,288 US5497285A (en) 1993-09-14 1993-09-14 Power MOSFET with overcurrent and over-temperature protection
GB9418179A GB2281815B (en) 1993-09-14 1994-09-09 Power mosfet with overcurrent and over-temperature protection

Publications (3)

Publication Number Publication Date
GB9516279D0 GB9516279D0 (en) 1995-10-11
GB2291743A GB2291743A (en) 1996-01-31
GB2291743B true GB2291743B (en) 1996-08-28

Family

ID=26305594

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9516278A Expired - Fee Related GB2291742B (en) 1993-09-14 1994-09-09 Power MOS-gated device with over-temperature protection
GB9516279A Expired - Fee Related GB2291743B (en) 1993-09-14 1994-09-09 Power MOS-gated device with overcurrent and over-temperature protection

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9516278A Expired - Fee Related GB2291742B (en) 1993-09-14 1994-09-09 Power MOS-gated device with over-temperature protection

Country Status (1)

Country Link
GB (2) GB2291742B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0809295B1 (en) * 1996-05-21 2003-04-02 Infineon Technologies AG Mosfet with temperature protection
DE19633920C1 (en) * 1996-08-22 1997-10-09 Siemens Ag Semiconductor power switch
SG55452A1 (en) * 1997-02-12 1998-12-21 Int Rectifier Corp Method and circuit to sense the tj of mos-gated power semi conductor devices
KR100471521B1 (en) * 1997-02-19 2006-04-21 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Power semiconductor devices with a temperature sensor circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256316A (en) * 1991-05-31 1992-12-02 Fuji Electric Co Ltd Controlling parasitic transister action in a misfet
US5262665A (en) * 1991-04-23 1993-11-16 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Semiconductor device with current sensing function

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2270795B (en) * 1992-09-18 1995-02-15 Texas Instruments Ltd Improvements in or relating to the trimming of integrated circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262665A (en) * 1991-04-23 1993-11-16 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Semiconductor device with current sensing function
GB2256316A (en) * 1991-05-31 1992-12-02 Fuji Electric Co Ltd Controlling parasitic transister action in a misfet

Also Published As

Publication number Publication date
GB2291743A (en) 1996-01-31
GB9516279D0 (en) 1995-10-11
GB2291742A (en) 1996-01-31
GB2291742B (en) 1996-08-28
GB9516278D0 (en) 1995-10-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040909