FR2717323B1 - MOSFET de puissance avec protection de sur-intensité et de surchauffe. - Google Patents

MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Info

Publication number
FR2717323B1
FR2717323B1 FR9503344A FR9503344A FR2717323B1 FR 2717323 B1 FR2717323 B1 FR 2717323B1 FR 9503344 A FR9503344 A FR 9503344A FR 9503344 A FR9503344 A FR 9503344A FR 2717323 B1 FR2717323 B1 FR 2717323B1
Authority
FR
France
Prior art keywords
overcurrent
power mosfet
overheating protection
overheating
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9503344A
Other languages
English (en)
Other versions
FR2717323A1 (fr
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/121,288 external-priority patent/US5497285A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2717323A1 publication Critical patent/FR2717323A1/fr
Application granted granted Critical
Publication of FR2717323B1 publication Critical patent/FR2717323B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR9503344A 1993-09-14 1995-03-22 MOSFET de puissance avec protection de sur-intensité et de surchauffe. Expired - Fee Related FR2717323B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/121,288 US5497285A (en) 1993-09-14 1993-09-14 Power MOSFET with overcurrent and over-temperature protection
FR9410966A FR2710191B1 (fr) 1993-09-14 1994-09-14 MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Publications (2)

Publication Number Publication Date
FR2717323A1 FR2717323A1 (fr) 1995-09-15
FR2717323B1 true FR2717323B1 (fr) 1997-12-05

Family

ID=26231399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503344A Expired - Fee Related FR2717323B1 (fr) 1993-09-14 1995-03-22 MOSFET de puissance avec protection de sur-intensité et de surchauffe.

Country Status (1)

Country Link
FR (1) FR2717323B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2410630A (en) * 2004-01-28 2005-08-03 Bombardier Transp Gmbh A driver providing slow turn-off for unsaturated IGBT switches

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3936544A1 (de) * 1988-12-21 1990-06-28 Siemens Ag Schaltungsanordnung zum schutz eines leistungs-mosfet
JPH036055A (ja) * 1989-06-01 1991-01-11 Mitsubishi Electric Corp Ｃｍｏｓ集積回路のラッチアップ保護回路
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
EP0565807A1 (fr) * 1992-04-17 1993-10-20 STMicroelectronics S.r.l. Dispositif de transistor de puissance MOS

Also Published As

Publication number Publication date
FR2717323A1 (fr) 1995-09-15

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Legal Events

Date Code Title Description
ST Notification of lapse