FR2705690B1 - Installation pourvue d'un dispositif d'admission de gaz, pour le traitement de substrats dans un récipient sous vide, et procédé pour ce traitement. - Google Patents
Installation pourvue d'un dispositif d'admission de gaz, pour le traitement de substrats dans un récipient sous vide, et procédé pour ce traitement.Info
- Publication number
- FR2705690B1 FR2705690B1 FR9404731A FR9404731A FR2705690B1 FR 2705690 B1 FR2705690 B1 FR 2705690B1 FR 9404731 A FR9404731 A FR 9404731A FR 9404731 A FR9404731 A FR 9404731A FR 2705690 B1 FR2705690 B1 FR 2705690B1
- Authority
- FR
- France
- Prior art keywords
- treatment
- substrates
- gas inlet
- vacuum container
- inlet device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01240/93A CH687258A5 (de) | 1993-04-22 | 1993-04-22 | Gaseinlassanordnung. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2705690A1 FR2705690A1 (fr) | 1994-12-02 |
FR2705690B1 true FR2705690B1 (fr) | 1997-05-30 |
Family
ID=4205759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9404731A Expired - Lifetime FR2705690B1 (fr) | 1993-04-22 | 1994-04-20 | Installation pourvue d'un dispositif d'admission de gaz, pour le traitement de substrats dans un récipient sous vide, et procédé pour ce traitement. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5622606A (fr) |
JP (1) | JP3706157B2 (fr) |
CH (1) | CH687258A5 (fr) |
DE (1) | DE4412541B4 (fr) |
FR (1) | FR2705690B1 (fr) |
GB (1) | GB2277327B (fr) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19501733C1 (de) * | 1995-01-20 | 1996-05-15 | Heraeus Quarzglas | Vorrichtung zur Aufteilung eines Gasstromes in mehrere Teilgasströme |
US5980686A (en) | 1998-04-15 | 1999-11-09 | Applied Komatsu Technology, Inc. | System and method for gas distribution in a dry etch process |
US6383954B1 (en) | 1999-07-27 | 2002-05-07 | Applied Materials, Inc. | Process gas distribution for forming stable fluorine-doped silicate glass and other films |
US6502530B1 (en) * | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
DE10045958B4 (de) * | 2000-09-16 | 2008-12-04 | Muegge Electronic Gmbh | Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozeßkammer |
DE10100670A1 (de) | 2001-01-09 | 2002-08-14 | Univ Braunschweig Tech | Zuführvorrichtung für eine CVD-Anlage |
JP4239520B2 (ja) * | 2002-08-21 | 2009-03-18 | ソニー株式会社 | 成膜装置およびその製造方法、並びにインジェクタ |
US20040072056A1 (en) * | 2002-10-10 | 2004-04-15 | Whiton John H. | Cascade fuel inlet manifold for fuel cells |
KR100862658B1 (ko) * | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | 반도체 처리 시스템의 가스 주입 장치 |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
CN101068950A (zh) * | 2003-05-30 | 2007-11-07 | 阿维扎技术公司 | 气体分配系统 |
KR101070353B1 (ko) * | 2003-06-25 | 2011-10-05 | 주성엔지니어링(주) | 반도체 소자 제조장치의 가스 인젝터 |
US20050118487A1 (en) * | 2003-12-02 | 2005-06-02 | Whiton John H. | Small volume, fuel cell inlet fuel gas distributor having low pressure drop |
DE102004008425B4 (de) * | 2004-02-19 | 2011-12-29 | Von Ardenne Anlagentechnik Gmbh | Gasführungsanordnung in einer Vakuumbeschichtungsanlage mit einer längserstreckten Magnetronanordnung |
US20050223983A1 (en) * | 2004-04-08 | 2005-10-13 | Venkat Selvamanickam | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US20050223984A1 (en) * | 2004-04-08 | 2005-10-13 | Hee-Gyoun Lee | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
EP1807547A1 (fr) * | 2004-10-11 | 2007-07-18 | Bekaert Advanced Coatings | Systeme de distribution de gaz allonge |
DE102005035247B9 (de) * | 2005-07-25 | 2012-01-12 | Von Ardenne Anlagentechnik Gmbh | Fluidverteiler mit binärer Struktur |
EP1915470A4 (fr) * | 2005-07-29 | 2012-04-04 | Aviza Tech Inc | Appareil de depot destine au traitement de semiconducteurs |
WO2007045110A2 (fr) * | 2005-10-17 | 2007-04-26 | Oc Oerlikon Balzers Ag | Moyens de nettoyage pour dispositifs pecvd a grande surface utilisant une source de plasma a distance |
GB0522147D0 (en) * | 2005-10-31 | 2005-12-07 | 3M Innovative Properties Co | Emergency spill kit |
KR101150142B1 (ko) * | 2006-04-06 | 2012-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링 |
US20070235320A1 (en) * | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
US7850828B2 (en) * | 2006-09-15 | 2010-12-14 | Cardinal Cg Company | Enhanced virtual anode |
JP2008127615A (ja) * | 2006-11-20 | 2008-06-05 | Fujitsu Ltd | 薄膜形成方法、薄膜形成装置および積層膜 |
JP2008212814A (ja) * | 2007-03-02 | 2008-09-18 | Canon Inc | 流体搬送路、流体処理装置および流体処理システム |
WO2008113571A1 (fr) * | 2007-03-20 | 2008-09-25 | Leybold Optics Gmbh | Système de répartition de gaz |
US8512509B2 (en) * | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
US20110070370A1 (en) * | 2008-05-28 | 2011-03-24 | Aixtron Ag | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
TWI498053B (zh) * | 2008-12-23 | 2015-08-21 | Ind Tech Res Inst | 電漿激發模組 |
KR200478069Y1 (ko) | 2009-09-10 | 2015-08-24 | 램 리써치 코포레이션 | 플라즈마 처리 장치의 교체가능한 상부 체임버 부품 |
CN101899652B (zh) * | 2009-12-01 | 2012-05-02 | 东莞宏威数码机械有限公司 | 气体供应系统及方法 |
CN101813236B (zh) * | 2009-12-01 | 2013-01-23 | 东莞宏威数码机械有限公司 | 气体输送装置及输送方法 |
JP2011134871A (ja) * | 2009-12-24 | 2011-07-07 | Shin Etsu Handotai Co Ltd | エピタキシャル成長装置及びエピタキシャル成長装置の製造方法 |
JP5735226B2 (ja) * | 2010-07-16 | 2015-06-17 | 株式会社アルバック | 蒸着装置及び蒸着方法 |
WO2012138498A1 (fr) * | 2011-04-07 | 2012-10-11 | Sage Electrochromics, Inc. | Procédé perfectionné d'ajustement de l'uniformité d'un dépôt de lithium |
US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
CN103205719B (zh) * | 2012-01-17 | 2015-09-09 | 上海北玻镀膜技术工业有限公司 | 气体通道模块及应用其的气体分配装置 |
TW201341555A (zh) * | 2012-02-14 | 2013-10-16 | Tokyo Electron Ltd | 蒸鍍頭及蒸鍍裝置 |
GB201212540D0 (en) | 2012-07-13 | 2012-08-29 | Uab Electrum Balticum | Vacuum treatment process monitoring and control |
JP2014057047A (ja) * | 2012-08-10 | 2014-03-27 | Tokyo Electron Ltd | 基板処理装置及びガス供給装置 |
KR101541154B1 (ko) * | 2012-12-13 | 2015-08-03 | 엘아이지인베니아 주식회사 | 원자층 증착장치 |
CN103993265A (zh) * | 2013-02-20 | 2014-08-20 | 生阳新材料科技(宁波)有限公司 | 用于镀膜制程的气体释出装置 |
CN104798446B (zh) | 2013-03-12 | 2017-09-08 | 应用材料公司 | 具有方位角与径向分布控制的多区域气体注入组件 |
US9633823B2 (en) * | 2013-03-14 | 2017-04-25 | Cardinal Cg Company | Plasma emission monitor and process gas delivery system |
US9353439B2 (en) * | 2013-04-05 | 2016-05-31 | Lam Research Corporation | Cascade design showerhead for transient uniformity |
JP5493139B1 (ja) * | 2013-05-29 | 2014-05-14 | 独立行政法人科学技術振興機構 | ナノクラスター生成装置 |
CN103712229A (zh) * | 2013-12-19 | 2014-04-09 | 常熟市联诚光源电器配件有限公司 | 新型芯柱生产设备集中送风系统 |
CN103697557A (zh) * | 2013-12-19 | 2014-04-02 | 常熟市联诚光源电器配件有限公司 | 芯柱生产设备集中送风系统 |
KR102194915B1 (ko) * | 2014-01-13 | 2020-12-28 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 스퍼터링용 가스 공급관 |
JP6265063B2 (ja) * | 2014-06-26 | 2018-01-24 | 住友金属鉱山株式会社 | ガス放出ユニット及びこれを具備する成膜装置 |
WO2016043033A1 (fr) * | 2014-09-17 | 2016-03-24 | 東京エレクトロン株式会社 | Pomme de douche et système de dépôt |
CN104404458A (zh) * | 2014-11-05 | 2015-03-11 | 上海大学 | 一种大面积均匀通气的气路结构 |
JP6293643B2 (ja) * | 2014-11-05 | 2018-03-14 | 株式会社東芝 | ノズル装置及び処理装置 |
TW201634738A (zh) * | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | 用於在空間上分離之原子層沉積腔室的經改良注射器 |
CN107208249B (zh) | 2015-02-03 | 2019-08-20 | 卡迪奈尔镀膜玻璃公司 | 包括气体分配系统的喷溅装置 |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
JP6462613B2 (ja) * | 2016-03-15 | 2019-01-30 | 株式会社東芝 | 分流構造 |
JP6628065B2 (ja) * | 2016-09-05 | 2020-01-08 | 信越半導体株式会社 | 気相成長装置、エピタキシャルウェーハの製造方法及び気相成長装置用のアタッチメント |
JP7119779B2 (ja) * | 2018-08-30 | 2022-08-17 | 住友金属鉱山株式会社 | 成膜装置と成膜方法 |
WO2021078442A1 (fr) | 2019-10-24 | 2021-04-29 | Evatec Ag | Chambre de traitement de processus sous vide et procédé de traitement de substrat au moyen de procédé de traitement sous vide |
KR102688886B1 (ko) * | 2021-08-26 | 2024-07-26 | (주)씨에스피 | 세정장치 |
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US3854443A (en) * | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
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JPS60198822A (ja) * | 1984-03-23 | 1985-10-08 | Anelva Corp | ドライエツチング装置 |
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FR2573325B1 (fr) * | 1984-11-16 | 1993-08-20 | Sony Corp | Appareil et procede pour faire des depots de vapeur sur des plaquettes |
DE3521053A1 (de) * | 1985-06-12 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum aufbringen duenner schichten auf ein substrat |
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US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
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DE4120176C1 (fr) * | 1991-06-19 | 1992-02-27 | Schott Glaswerke, 6500 Mainz, De | |
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DE4140862A1 (de) * | 1991-12-11 | 1993-06-17 | Leybold Ag | Kathodenzerstaeubungsanlage |
EP0574075B1 (fr) * | 1992-06-09 | 1996-02-07 | Koninklijke Philips Electronics N.V. | Procédé pour la fabrication d'un dispositif à semi-conducteur par CVD |
WO1994015707A2 (fr) * | 1993-01-15 | 1994-07-21 | Aixtron Gmbh | Dispositif permettant a au moins un gaz utilise dans un processus industriel d'entrer simultanement dans une pluralite de chambres de reaction |
DE4311360C2 (de) * | 1993-04-06 | 2002-10-24 | Applied Films Gmbh & Co Kg | Anordnung zum reaktiven Abscheiden von Werkstoffen als Dünnfilm durch Mittelfrequenz-Kathodenzerstäubung |
-
1993
- 1993-04-22 CH CH01240/93A patent/CH687258A5/de not_active IP Right Cessation
-
1994
- 1994-04-12 DE DE4412541A patent/DE4412541B4/de not_active Expired - Lifetime
- 1994-04-20 GB GB9407818A patent/GB2277327B/en not_active Expired - Lifetime
- 1994-04-20 FR FR9404731A patent/FR2705690B1/fr not_active Expired - Lifetime
- 1994-04-20 US US08/230,292 patent/US5622606A/en not_active Expired - Lifetime
- 1994-04-22 JP JP08476394A patent/JP3706157B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2705690A1 (fr) | 1994-12-02 |
GB2277327B (en) | 1997-03-26 |
GB2277327A (en) | 1994-10-26 |
US5622606A (en) | 1997-04-22 |
DE4412541A1 (de) | 1994-10-27 |
CH687258A5 (de) | 1996-10-31 |
JPH0790572A (ja) | 1995-04-04 |
JP3706157B2 (ja) | 2005-10-12 |
DE4412541B4 (de) | 2011-03-10 |
GB9407818D0 (en) | 1994-06-15 |
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