WO2008113571A1 - Système de répartition de gaz - Google Patents

Système de répartition de gaz Download PDF

Info

Publication number
WO2008113571A1
WO2008113571A1 PCT/EP2008/002196 EP2008002196W WO2008113571A1 WO 2008113571 A1 WO2008113571 A1 WO 2008113571A1 EP 2008002196 W EP2008002196 W EP 2008002196W WO 2008113571 A1 WO2008113571 A1 WO 2008113571A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
channel system
gas supply
gas distributor
outlet nozzles
Prior art date
Application number
PCT/EP2008/002196
Other languages
German (de)
English (en)
Other versions
WO2008113571A9 (fr
Inventor
Andreas Pflug
Michael Siemers
Bernd Szyszka
Michael Geisler
Original Assignee
Leybold Optics Gmbh
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics Gmbh, Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Leybold Optics Gmbh
Publication of WO2008113571A1 publication Critical patent/WO2008113571A1/fr
Publication of WO2008113571A9 publication Critical patent/WO2008113571A9/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Definitions

  • the invention relates to a gas distribution system according to the preamble of the independent claims.
  • Parallel-plate plasma reactors are used in particular in the field of photovoltaics for the purpose of depositing amorphous or microcrystalline silicon layers in a SiH 4 -H 2 plasma.
  • T. Repmann "Stacked solar cells made of amorphous and microcrystalline silicon” describes such a parallel plate reactor, here it turns out that over the entire coating surface consistent electrical quality of the solar cell can only be achieved if sufficient homogeneity of a -Si / Dc-Si layer is given both in terms of the layer thickness and the morphology.
  • the gas inlet is designed in the form of a gas shower, which is integrated in the form of a regular array of gas inlet nozzles in one of the two electrode plates.
  • the known quaternary branching system uses quadruple branches each.
  • the channels in different levels of branching run partially overlapping, so that this concept is structurally relatively complex to implement.
  • the object of the invention is to provide a gas distribution can be avoided with the disadvantages of the prior art.
  • the gas distribution system has at least three, preferably solid plates, of which the first has a gas supply line, the third has a preferably two-dimensional arrangement of gas outlet nozzles.
  • the second plate is disposed between the first and the third, wherein the second plate includes at least one channel system which interconnects gas supply and outlet nozzles.
  • a subregion of the channel system with at least 60% of the total area of the channel system is arranged in the middle plate, preferably non-overlapping and preferably in one plane, and that at least 60% of the branching points of the channel system are binary branch points.
  • a branch point of the channel system is defined as a position in the channel system in which the gas can flow from a volume into more than one volume. For example, at a binary branch point, the gas may flow in two volumes.
  • the non-overlapping and / or lying in a plane portion of the channel system has at least 70%, 80%, 90% or 95% share of the total area of the channel system. It is further preferred if at least 70%, 80%, 90% or 95% of the branch points of the channel system are binary branch points.
  • An embodiment of the invention is preferred with a common gas supply line and / or a regular array of gas outlet nozzles, wherein the channel system connects the common gas supply line with the gas outlet nozzles in such a way that the flow conductance values of each connection are equal within the manufacturing tolerances.
  • the connections between gas supply line and gas outlet openings are realized by channels milled within a rectangular, solid plate, which preferably have a rectangular cross-section.
  • the channel system is realized in one plane and / or the channel system contains only binary branches.
  • the plate is clamped vacuum-tight between two further rectangular plates.
  • the openings for gas supply and -austrittsö réelleen be realized through holes whose longitudinal axes are preferably perpendicular to the aforementioned channels within the middle plate.
  • only three superimposed or successively arranged metal plates are provided, of which the middle contains a preferably milled channel system, while the two outer plates contain the common gas inlet or the grid of the gas outlet nozzles in the form of circular holes.
  • this relates to a plasma reactor comprising two parallel plates which are connected to an electrical power supply. At least one of the two plates in this case contains a gas distributor which contains at least one channel system which connects gas supply line and outlet nozzles with one another. According to the invention, a subregion of the channel system with at least 60% of the total area of the channel system is arranged in the middle plate, preferably non-overlapping and preferably in one plane, and that at least 60% of the branching points of the channel system are binary branch points.
  • the plasma reactor consists of two parallel plates and / or the channel system or the partial area connects the common gas supply line with the gas outlet nozzles in such a way that the flow conductance values of each connection are equal within the manufacturing tolerances and / or has exclusively binary branch points.
  • Figure 1 an illustration of the design rule for the milling pattern of a two-dimensional, binary gas distributor system.
  • Figure 2 exemplary embodiments for the connection of a plurality of gas distributors of the third order by U-shaped channels in order to provide non-square surfaces with a uniform grid of gas outlet nozzles can.
  • FIG. 3 Exemplary embodiments using two gas flow regulators for a gas distributor system
  • Figure 4 Calculated H 2 pressure distribution along the dashed line in the left graph.
  • the realization according to the invention of a uniform flow conductance value of all duct connections is illustrated by the following concept: on a rectangular plate with the dimensions L X + 2U, L Y + 2V, in the first step a horizontal line of length L x / 2 and two vertical lines of length are formed L ⁇ / 2 an H - shape drawn centrally on the rectangular plate.
  • the parameters U and V specify horizontal and vertical edges in which no gas outlet nozzles are provided.
  • the H-shape has four ends which have a distance L x / 2 in the horizontal direction and a distance L ⁇ / 2 from each other in the vertical direction.
  • Each line now represents the central axis of a channel to be milled.
  • the channel width D must be smaller than half the grid spacing of the end points of the last iteration step. It now results, for example by complete induction, that the flow conductance values from the middle of the first H-shape to the end points of the H-shapes of the last iteration stage are equal within the production tolerances.
  • the basic form of the gas distributor according to the invention is characterized in that, in the two-dimensional arrangement of the gas outlet nozzles, the number of columns and rows is 2 M in each case, wherein M corresponds to the number of iteration stages in the design.
  • An approximately square plate can be coated with this concept with a grid of gas outlet nozzles, in which the vertical and vertical distances between adjacent nozzles are approximately equal.
  • this concept would require a corresponding distortion between horizontal and vertical spacing of adjacent nozzles.
  • an embodiment of the invention provides for connecting two channel networks of order M through a further, U-shaped channel, as shown in FIG.
  • Figure 3 shows a rectangle with a length to width ratio of 2/3 (left graph) and 4/5 (right graph), which is coated with a uniform grid of gas outlet nozzles.
  • the gas distributors described can be used, for example, in a plasma reactor consisting of two parallel or three plates, which are connected to an electrical power supply, wherein at least one of the two plates contains a gas distributor.
  • the gas distributor can have a channel system which connects the gas supply line and outlet nozzles with one another such that the flow conductance between the gas supply line and each gas outlet nozzle is equal within the production tolerances, and it is provided that the channel system does not overlap between the gas supply line and the gas outlet nozzles in the middle plate is constructed in a single plane and contains only binary branches.
  • gas distributors can consist of 2 M linearly arranged, binary, two-dimensional gas distributors according to a), wherein the 2 M gas supply lines of the 2 M gas distributors are fed by means of a binary, one-dimensional gas distributor.
  • the gas distributor may consist of several independent mass flow controllers according to a) or b), wherein a corresponding number of gas distributors are combined with each other.
  • a simulation calculation of the gas flow of H 2 by a binary gas distributor system of order 3 with 64 gas outlet openings with area dimensions of 300 * 375 mm 2 shows that the gas distribution system according to the invention behaves particularly advantageous compared to manufacturing tolerances in the production of the channel system.
  • the thickness of the plate containing the channel system is 5 mm, the channel cross section is 5x5 mm 2 .
  • cylindrical end nozzles are assumed with 3 mm in diameter and 10 mm in length.
  • the width is varied for the vertical channel which adjoins the center piece on the right, in order to be able to read the effect of manufacturing tolerances on the outflow homogeneity of the gas distributor.
  • the simulation of the pressure distribution was firstly done with the Direct Simulation Monte Carlo method (see A. Pflug et al., Parallel DSMC Gasflow Simulation of an In-Line Coater for Reactive Sputtering) and secondly with the help of analytical semiempirical formulas performed for the Strömungsleitute the channel sections.
  • the semiempirical model calculates the gas pressure in individual test volumes V 1 , which are respectively arranged at the branch points and in the center of the gas distributor.
  • F 1 is the optional gas inlet in volume j and S PJ is an absorbency of an optional pump in volume /
  • S PJ is an absorbency of an optional pump in volume /
  • FIG. 4 shows the simulation calculations carried out with both methods for the symmetrical case as well as for the case where the width of the vertical channel adjoining the centerpiece on the right has been reduced by 20%. This results in an increased admission pressure on the gas supply side of this channel and consequently an increased pressure difference across this channel, whereby according to Eq. (2) the effect of the reduced flow coefficient is partially compensated.

Abstract

L'invention concerne un système de répartition de gaz comportant au moins trois plaques dont la première comprend un conduit d'arrivée de gaz commun, la troisième comporte un dispositif de tuyères de sortie de gaz, la deuxième plaque étant disposée entre la première et la troisième. La troisième plaque présente au moins un système de conduits qui relient le conduit d'arrivée de gaz et les tuyères de sortie. Une zone partielle du système de conduits, représentant au moins 60 % de la surface totale du système de conduits, est disposée dans la plaque médiane sans chevauchement et/ou sur un plan, au moins 60 % des points de ramification du système de conduits étant des points de ramification binaires.
PCT/EP2008/002196 2007-03-20 2008-03-19 Système de répartition de gaz WO2008113571A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007013268.0 2007-03-20
DE102007013268 2007-03-20

Publications (2)

Publication Number Publication Date
WO2008113571A1 true WO2008113571A1 (fr) 2008-09-25
WO2008113571A9 WO2008113571A9 (fr) 2010-11-11

Family

ID=39616555

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/002196 WO2008113571A1 (fr) 2007-03-20 2008-03-19 Système de répartition de gaz

Country Status (2)

Country Link
TW (1) TW200900528A (fr)
WO (1) WO2008113571A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109538197A (zh) * 2018-11-01 2019-03-29 中国石油大学(北京) 油气储层钻井轨道确定方法、装置及存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4412541A1 (de) * 1993-04-22 1994-10-27 Balzers Hochvakuum Gaseinlassanordnung
DE102004008425A1 (de) * 2004-02-19 2005-09-08 Von Ardenne Anlagentechnik Gmbh Gasführungsanordnung in einer Vakuumbeschichtungsanlage mit einer längserstreckten Magnetronanordnung
WO2006040275A1 (fr) * 2004-10-11 2006-04-20 Bekaert Advanced Coatings Systeme de distribution de gaz allonge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4412541A1 (de) * 1993-04-22 1994-10-27 Balzers Hochvakuum Gaseinlassanordnung
DE102004008425A1 (de) * 2004-02-19 2005-09-08 Von Ardenne Anlagentechnik Gmbh Gasführungsanordnung in einer Vakuumbeschichtungsanlage mit einer längserstreckten Magnetronanordnung
WO2006040275A1 (fr) * 2004-10-11 2006-04-20 Bekaert Advanced Coatings Systeme de distribution de gaz allonge

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109538197A (zh) * 2018-11-01 2019-03-29 中国石油大学(北京) 油气储层钻井轨道确定方法、装置及存储介质
WO2020088389A1 (fr) * 2018-11-01 2020-05-07 中国石油大学(北京) Procédé et dispositif de planification autonome assistée par ordinateur de trajectoire de forage pour réservoir de gaz de pétrole ainsi que support de stockage

Also Published As

Publication number Publication date
WO2008113571A9 (fr) 2010-11-11
TW200900528A (en) 2009-01-01

Similar Documents

Publication Publication Date Title
DE10119766B4 (de) RF Plasma Reaktor
EP1525428B1 (fr) Procede de fabrication d'un reseau hydraulique pour une transmission de chaleur et un transport de matiere optimises
DE102015105568A1 (de) Additive Fertigung für Brennstoffzellenströmungsfelder
DE4100046A1 (de) Quadrupol-massenfilter fuer geladene teilchen
EP2673825B1 (fr) Cellule électrochimique
DE102010019263A1 (de) Ventilboden
WO2008113571A9 (fr) Système de répartition de gaz
EP2915901B1 (fr) Dispositif de traitement par plasma avec recirculation de gaz de processus dans de multiples plasmas
EP2132815B1 (fr) Cellule de pile à combustible
DE102005035247B9 (de) Fluidverteiler mit binärer Struktur
DE10045958B4 (de) Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozeßkammer
DE2359893C2 (de) Verfahren und Vorrichtung zum Niederschlagen einer durchsichtigen elektrisch leitenden Metalloxidschicht
DE102016106441A1 (de) Absaughaube in einem CVD-Reaktor
DE102009022018A1 (de) Metallisierungsverfahren zur Herstellung von Solarzellen
EP3255173B1 (fr) Distributeur de gaz tempere par fluide structure en couches
EP2844379A1 (fr) Dispositif de mélange pour des installations de traitement de l'eau par uv présentant un conduit ouvert
DE102022129159B3 (de) Bipolarplatte, Zellenstapel und Verfahren zur Herstellung einer Bipolarplatte
WO2023020647A1 (fr) Plaque bipolaire et procédé pour produire une plaque bipolaire
DE896688C (de) Spannungs- bzw. stromgesteuerter Sekundaerelektronenvervielfacher
DE1902293C3 (de) Sekundärelektronenvervielfacher
EP4223911A1 (fr) Méthode et dispositif pour le revêtement galvanique d'une paroi tube-feuille-tube
DE102022112593A1 (de) Elektrodenplatte für ein Elektrolysesystem
EP2975332A1 (fr) Systeme de guidage d'air pour sortie rayonnant et procede
DE102021114977A1 (de) Zählerplatz mit einem Zählerfeld
DE102018209441A1 (de) Brennstoffzellenplatte

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08748842

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08748842

Country of ref document: EP

Kind code of ref document: A1