200900528 九、發明說明： 【發明所屬之技術領域】 本發明關於申請專利範圍第1項的一種氣體分配系 統’具有至少三個板，I中第一板具有—共同氣體供應管 路，第三板有一種氣體出口喷嘴的設置，第二板設在第一 、·板及第三板之間，其中該第三板至少包含一通道系統，該 通系統將氣體供應管路和出口喷嘴互相連接。 【先前技術】 ‘ 平行板電漿反應器特別用在光電池領域，以將非晶質 或微結晶的析層在一以札·%-電襞中析出。在T. Repmann 的淪文「由非晶質及微結晶矽構成的層疊太陽電池」中， 提到一種這種平行板反應器，在此提到，只有當該a_si/c_ Si層的層厚度及形態方面有充分均勻，随，太陽冑池的電性 質才能在整個鍍覆面積範圍中保持相同。 為了達到充分的層均勻性，氣體入口做成氣體浴板 、(Gasdusche)形狀，它呈一種氣體入口噴嘴的規則陣列形式 ^ 1 整合到二電極板之一中。 如果鍍層的均勾性很重要且因此在基質面範圍的氣體 壓力的分佈的均勾性為-#重要的程序因t，則連在其他 的鍍層技術——例如大面積的PVD鍍層，這種氣體分配系 統也很有幫助。 在歐洲專利ep m 86 93 B1(White等人）提到一種“懸 掛式氣體分配系統”，它由二個水平設置的板構成，該二 板圍成-個狹空腔’在上板中央有一中央氣體供應源，而 6 200900528 下板（它利用可繞的金屬片掛到上板上）有一氣體出口開口 的陣列。在空腔中的氣體壓力分佈係根據橫引導值調整，使 得在一有限的程序窗孔中經氣體出口喷嘴的流出量有充分 均勻性。一旦使用氣體流或者在程序室中（例如在ρν〇程 序時）的壓力很小時’這種設置就很重要，如此在氣體入口 系統的空腔中形成一明顯的壓力梯度。 以此背景著手，在美專利US 65〇2530 Bl(Turlit等人） 提到一種氣體浴板的設計，它由一個具有一氣體出口噴嘴 陣列的板及一共同的氣體供應管路構成，其中利帛一種通 道< 置確保亥共同的氣體供應管路與各氣體出口噴嘴之間 的V机值近乎相同。這點係利用氣體供應管路與氣體出口 贺嘴之間的m统達成，它設計成二重或四重分枝樹 的方式’二重分枝的情形可造成mi的氣體吹氣槍 (Gaslanze，英：gas lance)的結構。換言之，對於一種氣體出 口喷嘴的二度空間陣列，須傲容 』濱做夕數的這些二重分枝樹，並 \ 將它們與另一個二重通道系統互相組合。 此習知之四重分枝系統各使用四重分枝。在此，通道 在不同分枝平面中料重疊地延伸，因此這種 上較繁複。 |甘頁私 【發明内容】 配系統 利用它可避 本發明的目的在提供一種氣體分 免先前技術的缺點。 本發明利用申請專利範圍獨立項 依本發明的一種氣體分配系絲， 的特點達成此目的 具有至少三個板， 其 7 200900528 中第一板具有一共同氣體供應管路，第= 口喷嘴的設置，第二板設在第一板及第= 第三板至少包含-通道系統，該通系統將氣體供應管路： 出口喷嘴互相連接，依本發明，該通道系統的—個部^ 至人總面積的60%設在該中央的板中不 重疊地且/或设在一 +面中且该通道系統的分析點至少 60%為二重分枝點。 I夕 在此，通道系統的一分枝點的定義為通道系統的—種 位置’在此位置中’―個體積中的氣體可變成數個體積流 動。舉例而言，在一種__舌八 ^ 一重刀枝點，氧體分成二個體積流 動0 、 .如果該通道系統的不重疊的及/或在-平面中的部分 區域中至少有通道系統總面積的7G%、8G%、9()%或95%， 則甚佳。此外，如果該通道系統的分枝點的至少7G%、8〇%、 90°/。或95%為二重分枝點，則甚佳。 本發明的一較佳實施例具有一共同之氣體供應通道及 (或氣體出口喷嘴的一規則陣列，其中該通道系統將該共 同之氣體供應通道與氣體出口喷嘴連接，使各連接部之導 流值在製造容許誤差的範圍内為相同。該氣體供應通道與 氣體出口開口之間的連接利用在—長方形實心板中銳出的 通道達成，該通道宜具長方形橫截面。在此，該通道系統 做在一平面中及/或該通道系統只含二重分枝。板夾緊在 二個另外的長方形板之間成為密閉不漏真空的方式。在該 二板中，氣體供應通道及出口的開口利用孔造成，該孔的 8 200900528 縱軸宜垂直地在中央板内在上述通道上。 如果該通道系統設在不成重及/或在一單—的二声办 間平面中’則這點可使它在技術上的實施大大簡化。二 在一較佳實施例中，只設有三個上下重疊或前後相隨 設置的金屬板，其中，中間的那個金屬板宜包含銑出的通 道系統’而該二個外侧的板含有共同的氣體供應通道或氣 體出口喷嘴的網路，呈圓孔形式。 1 本發明另一標的為一種電漿反應器，包含至少二個平 行的板，該板與一電流供應源連接。該二板至少有—板包 含且至少一通道系統的一氣體分配器，該氣體分配器將氣 體供應管路與出口喷嘴互相連接，其中該通道的一個部分 區域以通道系統的總面積的至少6〇%不重疊及/或設在— 平面中，且該通道系統的分枝點至少6〇0/〇為雙重分枝點。 如果該電漿反應器由二個平行的板構成，且/或該通 道系統或該部分區域將該共同氣體供應通道與氣體出口噴 嘴連接，使得各連接部的導流值在製造容許誤差的範圍内 相同及/或只具有二重分枝點，則甚宜。 本發明的其他設計與優點在以下的說明配合圖式敘 述，但本發明的申請專利範圍不限於此。 【實施方式】 在圖1 a〜1 d係顯示銑切模型的結構的規格。箭圖指出 共同氣體供應管路的位置。 依本發明要使所有通道連接部有一致的導流值的實施 方式係利用以下的設計說明：在一個度量Lx+2U，Ly + 2Y的 9 200900528 長方幵v板上’在第m長度Lx/2的水平線及二條長 度LY/2的垂直線將一 H形狀劃到該長方形板中央。參數u /、 ‘不出水平與垂直的邊緣，在該邊緣中不設有氣體出 口嘴嘴…形有四個端，其沿水平方向互相的間隔為200900528 IX. Description of the Invention: [Technical Field] The present invention relates to a gas distribution system of claim 1 having at least three plates, the first plate of I having a common gas supply line, and a third plate There is a gas outlet nozzle disposed between the first plate and the third plate, wherein the third plate includes at least one channel system that interconnects the gas supply line and the outlet nozzle. [Prior Art] The parallel plate plasma reactor is particularly used in the field of photovoltaic cells to precipitate amorphous or microcrystalline precipitates in a zha%-electric enthalpy. In T. Repmann's essay "Laminated solar cells composed of amorphous and microcrystalline ruthenium", one such parallel plate reactor is mentioned, mentioned here only when the layer thickness of the a_si/c_Si layer And the morphology is sufficiently uniform, and the electrical properties of the solar pool can remain the same throughout the entire plating area. In order to achieve sufficient layer uniformity, the gas inlet is formed in the shape of a gas bath, (Gasdusche), which is integrated into one of the two electrode plates in the form of a regular array of gas inlet nozzles. If the uniformity of the coating is important and therefore the uniformity of the gas pressure distribution over the surface of the substrate is -# an important procedure due to t, then it is connected to other coating techniques - such as large-area PVD coatings. Gas distribution systems are also very helpful. In European patent ep m 86 93 B1 (White et al.) a "suspended gas distribution system" is proposed which consists of two horizontally arranged plates which enclose a narrow cavity in the center of the upper plate. The central gas supply, while the 6 200900528 lower plate (which hangs onto the upper plate with a wrapable sheet of metal) has an array of gas outlet openings. The gas pressure distribution in the cavity is adjusted according to the transverse guide value such that the outflow through the gas outlet nozzle in a limited program window is sufficiently uniform. This setting is important once the gas flow is used or when the pressure in the chamber (e.g., during the ρν〇 procedure) is small, such that a significant pressure gradient is created in the cavity of the gas inlet system. Starting from this background, US Patent No. 65 2525 Bl (Turlit et al.) refers to the design of a gas bath plate consisting of a plate having an array of gas outlet nozzles and a common gas supply line, wherein帛 A channel < ensures that the V value between the common gas supply line and each gas outlet nozzle is nearly the same. This is achieved by using the gas supply line and the gas outlet to the mouth of the gas outlet. It is designed as a double or quadruple branching tree. The double branching situation can cause the gas blow gun of the mi (Gaslanze, English: gas lance) structure. In other words, for a two-dimensional array of gas outlet nozzles, these double-branched trees must be arrogant and combined with another two-channel system. This conventional quadruple branching system uses quadruple branches each. Here, the channels extend over the different branching planes, so this is more complicated. [Guangzhou] [Invention] The system is designed to avoid the disadvantages of the prior art by providing a gas separation. The present invention utilizes a gas distribution yarn according to the present invention in accordance with the invention. It has at least three plates for its purpose, and the first plate of the 200900 528 has a common gas supply line, and the nozzle of the first nozzle is provided. The second plate is disposed on the first plate and the third plate includes at least a channel system, and the through system connects the gas supply pipe: the outlet nozzles are connected to each other. According to the invention, the channel system has a total of 60% of the area is located in the central panel without overlap and/or in a + face and at least 60% of the analysis points of the channel system are double branch points. Here, a branching point of the channel system is defined as the position of the channel system in which the gas in one volume can become a volumetric flow. For example, in a __ tongue 八 ^ a heavy knife branch point, the oxygen body is divided into two volume flows 0 , if there is at least a channel system in the partial region of the channel system that does not overlap and / or in the - plane 7G%, 8G%, 9% or 95% of the area is very good. In addition, if the branching point of the channel system is at least 7G%, 8〇%, 90°/. Or 95% is a double branching point, which is very good. A preferred embodiment of the present invention has a common gas supply passage and (or a regular array of gas outlet nozzles, wherein the passage system connects the common gas supply passage to the gas outlet nozzle to divert the respective connections The value is the same within the range of manufacturing tolerances. The connection between the gas supply channel and the gas outlet opening is achieved by a channel that is sharp in a rectangular solid plate, the channel preferably having a rectangular cross section. Here, the channel system In a plane and/or the channel system contains only two branches. The plate is clamped between two additional rectangular plates to form a closed, vacuum-tight manner. In the second plate, the gas supply channel and the outlet are The opening is made up of a hole, and the longitudinal axis of the hole of the hole 200900528 is preferably vertically in the central plate on the above-mentioned channel. If the channel system is set in a non-weighted and/or in a single-two inter-office plane, then this point can be The technical implementation is greatly simplified. In a preferred embodiment, there are only three metal plates which are vertically overlapped or arranged one behind the other, wherein the middle gold The plate preferably includes a milled channel system' and the two outer plates contain a common gas supply channel or a network of gas outlet nozzles in the form of a circular hole. 1 Another object of the invention is a plasma reactor comprising At least two parallel plates connected to a current supply source. The second plate includes at least one gas distributor including at least one channel system, the gas distributor interconnecting the gas supply line and the outlet nozzle, Wherein a partial region of the channel does not overlap and/or is located in the plane of at least 6〇% of the total area of the channel system, and the branching point of the channel system is at least 6〇0/〇 as a double branching point. The plasma reactor is composed of two parallel plates, and/or the channel system or the partial region connects the common gas supply channel to the gas outlet nozzle such that the conductance value of each connection portion is within a manufacturing tolerance The same and/or only the double branching point is preferred. Other designs and advantages of the present invention are described in the following description in conjunction with the drawings, but the scope of the present invention is not limited thereto. Embodiments Figures 1 a to 1 d show the specifications of the structure of the milling model. The arrows indicate the position of the common gas supply line. According to the invention, the embodiment in which all the channel connections have a uniform flow guiding value is Use the following design instructions: on a 9 metric Lx+2U, Ly + 2Y 9 200900528 rectangular 幵v board 'on the mth length Lx/2 horizontal line and two length LY/2 vertical lines to draw an H shape to The center of the rectangular plate. The parameter u /, 'does not have horizontal and vertical edges, and there is no gas outlet nozzle in the edge... there are four ends, and the horizontal spacing is
Lx/2 /D垂直方向間隔為Ly/2。在下一步驟中，在先前的 Η :的各端點中央各劃一個㈣。其中央位在先前h形的 各端點，而其度量尺寸為先前Η形狀的一半，換言之沿水 :方向為Lx/4’沿垂直方向Ly/4。如此造成十六個端點， 匕們排列在一規則的網;^中’互相隔水平間帛，垂直 間隔LY/4。此過程再利用新產生的端點及其較小（減半尺 寸）的Η形反覆地重覆，直到該由端點產生的網格達 的密度為止。 此時各條線定 i. 你尸/Τ罟銑出的通道的中央軸。在此， 通道寬度D須㈣成比最後_次反覆階段的端點的網格間 隔的-半更小。舉例而言’利用完全的歸納，彳知從第一 個Η形狀中央一直到最後—次反覆階段的η㈣的導流值 在製造容許誤差的範圍内係相等者。 ^ 本發明的氣體分配器的基本形狀的特點在於：在兮氣 體出口噴嘴的二維設置中，行與列的數目各為2Μ，其 為設計中重覆階段的次數。-近似方形的板可利用’這種設 計覆以-種氣體出口喷嘴的網格，其中，在相鄰的噴嘴： 間的垂直距離和水平距離近乎相等，當長方形板的長斑寬 差报多時’則此設計在相鄰噴嘴的水平與垂直; 成對應的扭曲。 B以 10 200900528 為了避免氣體出口噴嘴的設置大幅扭曲’依本發明一 實施例，將Μ階的二個通道網格利用另一呈 办的通道 連接’如圖2所示。 如此可將長與寬的比例為2d或的長方形面設以 一均勻的喷嘴網格，利用圖3中所示之數種不同的氣體分 配器設置的組合，可造成其他長對寬的比例。但如此至少 需二個獨立的物料流過量調節器。圖3顯示—長方形，其 長度對寬度比例為2/3(左圖）或4/5(右圖），它覆以一均勻 的氣體出口通道網格。 上述之氣體分配器。舉例而言，可用於一電漿反應器， 它由二個平行的板或三個板（它們與一電流供應源連接）構 成，其中二板中至少有一板含有一氣體分配器。 (a) 在此’該氣體分配器可具有一通道系統，該通道系統 將氣體供應管路與出口喷嘴互相連接，使氣體供應管路與 氣體出口贺嘴之間的導流值在製造容許誤差的範圍中為 相同者’且該氣體供應管路與氣體出口喷嘴之間的通道系 、、’先在中板中係不重疊地建構在單一平面中，且只含有二重 分枝。 (b) 此外氣體分配器可依（a)由2M個直線設置的二重三維 氣體分配器構成’其中將對應數目的氣體分配器互相組 合。 H2氣流利用面積尺寸300mmx375mm的具64個氣體 200900528 出口開口的三階的二重氣體分配系統作模擬計算顯示出： 本發明的氣體分配系統在製造通道系統時，在製造容許誤 差方面特別有利。 含有該通道系統的板的厚度可為5毫米，通道橫截面 為5mmx5mm。在氣體出口開口有圓筒形端喷嘴，直徑 3 mm，長度i〇mm。對於在右邊接在中央件上的垂直通道， 該寬度改變，俾能由此將製造誤差對於氣體分配器的流出 均勻性的影響讀出。 壓力分佈的模擬一方面利用「蒙地卡羅直接模擬法」（見 A. Pflug ^A’ParallelDSMCGasflowSimulationofanin-Line Coater for Reactive Sputtering)，另一方面利用通道部 •k的導流值的分析式半經驗公式實施。半經驗模型計算個 別測試體積V』中的氣壓，該測試體積係各設在分枝點上及 氣體分配器的中點中。 在半經驗模型中’時間性的壓力發展係以趨近方式利 用以下的微分方程式描述，它對應於理想氣體方程式的時 間之導來式。 V^kTF^^^~PjK (1) 在此’ Fj為在體積j中的選擇性的氣體入口，而spj為 在體積j的一選擇性泵的—吸取能力。對於體積j與k之 間的導流值，首先使用對於氣體流過具圓形橫截面的管的 Knudsen 公式（見 M· WUtz h. Adam，w Walcher，κ· J〇usten: 真空技術手冊，第7版2〇()())。 12 200900528The vertical interval of Lx/2 /D is Ly/2. In the next step, one (four) is drawn in the center of each endpoint of the previous Η : . Its center is at each end of the previous h-shape, and its metric is half of the previous Η shape, in other words, along the water: the direction is Lx/4' in the vertical direction Ly/4. This results in sixteen endpoints, which are arranged in a regular network; in the middle of each other, horizontally spaced LY/4. This process is repeated over and over again with the newly generated endpoint and its smaller (half-size) Η shape until the density of the grid produced by the endpoint. At this point, each line is fixed. i. The central axis of the channel that your corpse/Τ罟 milled out. Here, the channel width D is required to be (four) smaller than - half of the grid interval of the end points of the last_repetition phase. For example, by using a complete induction, it is known that the η (four) conductance values from the center of the first Η shape to the last-repeated stage are equal within the range of manufacturing tolerances. The basic shape of the gas distributor of the present invention is characterized in that in the two-dimensional arrangement of the helium gas outlet nozzles, the number of rows and columns is each 2 Μ, which is the number of repetitions in the design. - Approximate square plates can be covered with a grid of gas outlet nozzles in which the vertical distance and horizontal distance between adjacent nozzles are nearly equal, when the length of the rectangular plate is wide When 'this design is horizontal and vertical at the adjacent nozzle; corresponding to the distortion. B is 10 200900528 in order to avoid a large distortion of the arrangement of the gas outlet nozzles. According to an embodiment of the invention, the two channel grids of the step are connected by another channel connection as shown in Fig. 2. Thus, a rectangular nozzle having a length to width ratio of 2d or a uniform nozzle grid can be provided, and a combination of several different gas distributor arrangements as shown in Fig. 3 can be used to cause other ratios of length to width. However, at least two separate material flow excess regulators are required. Figure 3 shows a rectangle with a length to width ratio of 2/3 (left) or 4/5 (right), which is covered by a uniform gas outlet channel grid. The gas distributor described above. For example, it can be used in a plasma reactor consisting of two parallel plates or three plates (which are connected to a current supply), wherein at least one of the plates contains a gas distributor. (a) Here, the gas distributor may have a channel system that interconnects the gas supply line and the outlet nozzle such that the conductance value between the gas supply line and the gas outlet nozzle is in manufacturing tolerance The same in the range 'and the channel system between the gas supply line and the gas outlet nozzle, 'first built in a single plane without overlapping in the middle plate, and only contains double branches. (b) Further, the gas distributor may be constructed according to (a) a two-dimensional three-dimensional gas distributor provided by 2M straight lines, wherein a corresponding number of gas distributors are combined with each other. The H2 gas flow was simulated using a three-stage dual gas distribution system with an area size of 300 mm x 375 mm with a gas outlet of 200900528. The gas distribution system of the present invention is particularly advantageous in manufacturing the channel system in terms of manufacturing tolerances. The plate containing the channel system can have a thickness of 5 mm and a channel cross section of 5 mm x 5 mm. At the gas outlet opening there is a cylindrical end nozzle with a diameter of 3 mm and a length i 〇 mm. For a vertical channel that is attached to the center member on the right side, the width is varied so that the manufacturing error can be read out for the effect of the outflow uniformity of the gas distributor. The simulation of the pressure distribution uses the Monte Carlo simulation method (see A. Pflug ^ A'Parallel DSMCGasflow Simulation of an in-Line Coater for Reactive Sputtering) on the one hand, and the analytical semi-experience of the flow value of the channel Formula implementation. The semi-empirical model calculates the air pressure in the individual test volumes V", which are each located at the branching point and at the midpoint of the gas distributor. In the semi-empirical model, the temporal pressure development is described in a near-approximation using the following differential equation, which corresponds to the time derivative of the ideal gas equation. V^kTF^^^~PjK (1) where 'Fj is the selective gas inlet in volume j, and spj is the suction capacity of a selective pump at volume j. For the conductance value between the volumes j and k, first use the Knudsen formula for the gas flowing through a tube with a circular cross section (see M. WUtz h. Adam, w Walcher, κ·J〇usten: Vacuum Technology Manual, 7th edition 2〇()()). 12 200900528
—tv d4~T28 7Z—tv d4~T28 7Z
Pa ^\(pj +ρΛ (2) 當流過一管（在管開口前方具有各向同性的氣體入口丨 時，事實顯示（見A· Pflug，反應性磁控管濺鍍的模擬，論文Pa ^\(pj +ρΛ (2) When flowing through a tube (having an isotropic gas inlet 前方 in front of the tube opening, the fact is shown (see A·Pflug, Simulation of Reactive Magnetron Sputtering)
Uni Giefien，2006) ’我們除了導流值外，依Kndsen還須各 考慮各一個導流值。 因此在方程式（1)中須使用由該二導流值構成的諧調手 段； ^jk ^jk.kuud!nu) ^jkjmjice 利用方程式（2)〜（4)中所述的步驟，不但可計算個別管 部段的導流值，而且可計算D=3mm，L=10mm的喷嘴的導 流值。 圖4顯示對於對稱情形以及對於另一情形（其中接在中 央件右邊的垂直通道的寬度減少了 2〇%)的用該二種方法實 施的模擬計算。如此，在此通道的氣體供應通道側產生較 大的預壓力’且因此在此通道有較大的壓力差，如此，依 方程式（2)，該減少之導流值的效應部分地被補償。 在具較小之橫截面的一通道的氣體供應管路侧上，調 整成較高的預壓力，因此由該較小之通道橫截面造成之較 小的導流值可利用經此通道之較力壓力差而部分地補償。 13 200900528 實線與虛線的曲線代表在邀七 ^ 表在對稱或不對稱的情形的DSMC叶 异’黑f及灰色的符號代表簡化之半經驗式的計算。， 事實顯示，當通道橫截面減少2〇%時，在端喷嘴的流 出量只改變了士7.8%。…即使製造誤差較大，利用本 發明的氣體分配系統’流出量仍有良好的均勻性。 【圖式簡單說明】 圖1係一個二度空間式的二重氣體分配系統的銑切模 型的結構規格的示圖， 圖2係利用U形通道的第三階的數個氣體分配器之連 接的實施例，俾連非方形的面都能設以氣體出口噴嘴的— 均勻網格， 圖3係使用二個氣流調節器供一氣體分配系統用的實 施例， 圖4係沿在左圖的虛線計算的％壓力分佈。 【主要元件符號說明】 無 14Uni Giefien, 2006) 'In addition to the diversion value, Kndsen must also consider each diversion value. Therefore, in equation (1), the harmonic modulation method consisting of the two pilot values must be used; ^jk ^jk.kuud!nu) ^jkjmjice Using the steps described in equations (2) to (4), not only can individual tubes be calculated The flow guide value of the section, and the flow guide value of the nozzle of D = 3 mm and L = 10 mm can be calculated. Figure 4 shows the simulation calculations performed by the two methods for the symmetrical case and for the other case where the width of the vertical channel to the right of the centerpiece is reduced by 2%. Thus, a larger pre-pressure is generated on the gas supply passage side of the passage and thus there is a larger pressure difference in this passage, and thus, according to equation (2), the effect of the reduced pilot value is partially compensated. On the side of the gas supply line of a channel having a smaller cross section, a higher pre-pressure is adjusted, so that a smaller diversion value caused by the smaller passage cross section can be utilized. The force is poor and partially compensated. 13 200900528 The solid and dashed curves represent the semi-empirical calculations of the simplified DSMC leaf in the case of symmetry or asymmetry in the case of symmetry or asymmetry. The fact shows that when the cross section of the channel is reduced by 2%, the amount of discharge at the end nozzle is only changed by 7.8%. ... Even if the manufacturing error is large, there is still good uniformity in the outflow amount using the gas distribution system of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing the structural specifications of a milling model of a two-dimensional space dual gas distribution system, and Fig. 2 is a connection of a plurality of gas distributors of a third order using a U-shaped channel. In the embodiment, the non-square surface of the 俾 can be provided with a gas outlet nozzle - a uniform grid, and Figure 3 is an embodiment using two dampers for a gas distribution system, Figure 4 is along the left The % pressure distribution calculated by the dashed line. [Main component symbol description] None 14