CN112281126B - Reaction magnetron sputtering separation type gas distribution method - Google Patents
Reaction magnetron sputtering separation type gas distribution method Download PDFInfo
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- CN112281126B CN112281126B CN202011186430.9A CN202011186430A CN112281126B CN 112281126 B CN112281126 B CN 112281126B CN 202011186430 A CN202011186430 A CN 202011186430A CN 112281126 B CN112281126 B CN 112281126B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0089—Reactive sputtering in metallic mode
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The invention discloses a reaction magnetron sputtering separation type gas distribution method, which comprises a gas flow controller, a sealing box, a magnetron sputtering plasma physical surface basic baffle and a sputtered glass substrate, wherein the lower end of the gas flow controller is connected with the sealing box, the front end of the gas flow controller is provided with a gas flow display window, one side of the gas flow controller is provided with a gas inlet pipe, the gas outlet end of the gas inlet pipe is connected with a gas flowmeter, the gas flowmeter is connected with a gas on-off electromagnetic valve through a connector, the gas on-off electromagnetic valve is connected with a goldenrain generator target gas distribution shunt tee joint through a connecting pipe, two ends of the goldenrain generator target gas distribution shunt tee joint are both connected with gas input pipes, and the gas outlet end of the gas input pipe is connected with a labyrinth gas distribution device. The invention solves the problems of low sputtering rate and easy nodulation on the surface of the target in the traditional mixed gas input method of reactive magnetron sputtering coating.
Description
Technical Field
The invention relates to the field of reactive magnetron sputtering coating, in particular to a reactive magnetron sputtering separation type gas distribution method.
Background
In the process of reactive magnetron sputtering coating, the action of the sputtering particles and the reaction gas not only occurs on the surface of the substrate but also occurs on the surface of the sputtering target material, when a certain amount of oxides are deposited on the surface of the sputtering target material, nodules are formed, the target surface has a sparking phenomenon, the sputtering plasma loses stability, and the target poisoning is commonly known.
At present, the traditional mixed gas input method is used in the reactive magnetron sputtering coating industry, working gas and reactive gas are input into a gas flow control system after passing through a mixing device, the mixed gas input method has the advantages that the diffusion of the two gases is more uniform, a group of gas distribution devices is saved, the occupied space is saved, and the like, but target poisoning is easily caused because the reactive gas is too close to a sputtering target surface.
Disclosure of Invention
The present invention is directed to solving the above problems and providing a reactive magnetron sputtering separation type gas distribution method.
The invention achieves the above purpose through the following technical scheme:
a reaction magnetron sputtering separation type gas distribution method comprises a gas flow controller, a seal box, a magnetron sputtering plasma physical surface basic baffle and a sputtered glass substrate, wherein the lower end of the gas flow controller is connected with the seal box, the front end of the gas flow controller is provided with a gas flow display window, one side of the gas flow controller is provided with a gas inlet pipe, the gas outlet end of the gas inlet pipe is connected with a gas flowmeter, the gas flowmeter is connected with a gas on-off electromagnetic valve through a connector, the gas on-off electromagnetic valve is connected with a goldenrain generator target gas distribution shunt tee through a connecting pipe, two ends of the goldenrain generator target gas distribution shunt tee are both connected with gas input pipes, the gas outlet end of the gas input pipe is connected with a labyrinth gas distribution device, a labyrinth gas distribution device is provided with gas diffusion holes, the front end of the seal box is provided with a seal cover, the device is characterized in that a sputtered glass substrate is arranged in the sealing box, two magnetron sputtering rotary cathode target-facing working gas labyrinth gas distribution devices are arranged on the lower side of the sputtered glass substrate, magnetron sputtering plasma physical surface basic baffles are arranged on the lower side of the magnetron sputtering rotary cathode target-facing working gas labyrinth gas distribution devices, magnetron sputtering plasma physical surface adjustable baffles are arranged between the magnetron sputtering plasma physical surface basic baffles, connecting screw holes are formed in the front side and the two sides of the magnetron sputtering plasma physical surface basic baffles, two magnetron sputtering rotary cathode target-facing reaction gas labyrinth gas distribution devices are arranged on the lower side of the magnetron sputtering plasma physical surface basic baffles, the magnetron sputtering rotary cathode target-facing working gas labyrinth gas distribution devices and the magnetron sputtering rotary cathode target-facing reaction gas labyrinth gas distribution devices are connected inside, two magnetron sputtering rotating cathode goldenrain butt targets are arranged on the lower side of the magnetron sputtering rotating cathode target reaction gas labyrinth gas distribution device, and magnetron sputtering rotating cathode goldenrain butt magnetron magnetic field sources are arranged on the inner sides of the magnetron sputtering rotating cathode goldenrain butt targets.
Preferably, the following components: the gas flow control instrument is provided with two groups which are respectively connected with external argon and oxygen, and the first group of the connecting pipe is connected with the inner side of the labyrinth gas distribution device of the magnetron sputtering rotating cathode to the target working gas labyrinth gas distribution device, and the second group of the connecting pipe is connected with the inner side of the labyrinth gas distribution device of the magnetron sputtering rotating cathode to the target reaction gas labyrinth gas distribution device.
So set up, utilize two sets of gas flow control appearance controls argon gas and oxygen respectively to improve control accuracy.
Preferably, the following components: the connector is connected with the gas flowmeter and the gas on-off electromagnetic valve through threads, and the connecting pipe is connected with the gas on-off electromagnetic valve and the goldenrain target gas distribution shunting tee joint through threads.
So set up, guaranteed through threaded connection, sealed effect.
Preferably: the connecting screw hole is formed in the magnetron sputtering plasma physical surface basic baffle, the magnetron sputtering plasma physical surface basic baffle is connected with the sealing box through a screw, and the magnetron sputtering plasma physical surface adjustable baffle is in sliding connection with the magnetron sputtering plasma physical surface basic baffle.
According to the arrangement, the magnetron sputtering plasma physical surface basic baffle and the magnetron sputtering plasma physical surface adjustable baffle play a role in blocking, and the magnetron sputtering plasma physical surface adjustable baffle can change positions according to requirements so as to adapt to different reaction environments.
Preferably: the gas input pipe is connected with the goldenrain target gas distribution flow dividing tee joint and the labyrinth gas distribution device through threads, and gas diffusion small holes of the labyrinth gas distribution device are integrally formed in the labyrinth gas distribution device.
So set up, labyrinth gas distribution device plays the gas distribution effect to make argon gas and oxygen can fully distribute.
Compared with the prior art, the invention has the following beneficial effects:
1. by implementing the working gas and reaction gas separated gas distribution method, the reaction gas reaching the target surface can be effectively reduced, the action of the reaction gas and the target surface is weakened, the target surface is kept in a metal mode sputtering state with a high sputtering rate, and the deposition of a chemical compound film with a chemical ratio can be formed on the substrate due to more reaction gas molecules near the surface of the substrate, so that the high sputtering rate is obtained, the nodule formation on the surface of the target is reduced, and the target poisoning period is effectively prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a reactive magnetron sputtering separation type gas distribution method according to the present invention;
FIG. 2 is a schematic view of a first structure inside a sealed box of the reactive magnetron sputtering separation type gas distribution method according to the present invention;
FIG. 3 is a schematic view of a second structure inside a sealed box of the reactive magnetron sputtering separation type gas distribution method according to the present invention;
FIG. 4 is a front view of the inside of a sealed box for a reactive magnetron sputtering separation type gas distribution method according to the present invention;
FIG. 5 is a schematic structural diagram of a basic baffle plate of a physical surface of a magnetron sputtering plasma of a reactive magnetron sputtering separation type gas distribution method according to the present invention;
FIG. 6 is a schematic structural view of a labyrinth gas distribution device for a reactive magnetron sputtering separation-type gas distribution method according to the present invention;
FIG. 7 is a schematic structural diagram of a gas flowmeter according to the reactive magnetron sputtering separation-type gas distribution method of the present invention.
The reference numerals are explained below:
1. a gas flow controller; 2. a gas flow display window; 3. a gas flow meter; 4. a gas on-off solenoid valve; 5. a connector; 6. an air inlet pipe; 7. a connecting pipe; 8. the Koelreuteria paniculata target gas distribution shunt tee joint; 9. a gas input pipe; 10. a labyrinth air distribution device; 11. gas diffusion pores of the labyrinth gas distribution device; 12. a sealing box; 13. a sealing cover; 14. a sputtered glass substrate; 15. a magnetron sputtering rotating cathode target-to-target working gas labyrinth gas distribution device; 16. a magnetic control sputtering rotating cathode target-facing reaction gas labyrinth gas distribution device; 17. a basic baffle plate of a physical surface of the magnetron sputtering plasma; 18. the baffle plate can be regulated and controlled on the physical surface of the magnetron sputtering plasma; 19. magnetron sputtering rotating cathode goldenrain pair target; 20. magnetron sputtering rotating cathode goldenrain generator target magnetic control magnetic field source; 21. and connecting the screw hole.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The invention will be further described with reference to the accompanying drawings in which:
example 1
As shown in fig. 1-7, a reaction magnetron sputtering separation type gas distribution method comprises a gas flow controller 1, a sealing box 12, a magnetron sputtering plasma physical surface basic baffle 17, a sputtered glass substrate 14, the sealing box 12 connected to the lower end of the gas flow controller 1, a gas flow display window 2 arranged at the front end of the gas flow controller 1, a gas inlet pipe 6 arranged at one side of the gas flow controller 1, a gas flowmeter 3 connected to the gas outlet end of the gas inlet pipe 6, the gas flowmeter 3 connected to a gas on-off solenoid valve 4 through a connector 5, the gas on-off solenoid valve 4 connected to a goldenrain generator target gas distribution tee 8 through a connecting pipe 7, gas input pipes 9 connected to both ends of the goldenrain generator target gas distribution tee 8, a labyrinth gas distribution device 10 connected to the gas input pipe 9, a labyrinth gas distribution device gas diffusion small hole 11 arranged on the labyrinth gas distribution device 10, a sealing cover 13 arranged at the front end of the sealing box 12, a sputtered glass substrate 14 is arranged in the sealing box 12, two magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices 15 are arranged on the lower side of the sputtered glass substrate 14, magnetron sputtering plasma physical surface basic baffles 17 are arranged on the lower side of the magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices 15, magnetron sputtering plasma physical surface adjustable baffles 18 are arranged between the magnetron sputtering plasma physical surface basic baffles 17, connecting screw holes 21 are formed in the front side and the two sides of the magnetron sputtering plasma physical surface basic baffles 17, two magnetron sputtering rotary cathode target-to-target reaction gas labyrinth gas distribution devices 16 are arranged on the lower side of the magnetron sputtering plasma physical surface basic baffles 17, and the inner parts of the magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices 15 and the magnetron sputtering rotary cathode target-to-reaction gas labyrinth gas distribution devices 16 are connected with the labyrinth gas distribution devices 10 Two magnetron sputtering rotating cathode goldenrain butt targets 19 are arranged at the lower side of the magnetron sputtering rotating cathode target reaction gas labyrinth gas distribution device 16, and a magnetron sputtering rotating cathode goldenrain butt magnetron magnetic field source 20 is arranged at the inner side of the magnetron sputtering rotating cathode goldenrain butt targets 19.
Preferably: the gas flow control instrument 1 is provided with two groups which are respectively connected with external argon and oxygen, a connecting pipe 7 of the first group is connected with a labyrinth gas distribution device 10 on the inner side of a magnetron sputtering rotating cathode target-to-working gas labyrinth gas distribution device 15, a connecting pipe 7 of the second group is connected with a labyrinth gas distribution device 10 on the inner side of a magnetron sputtering rotating cathode target-to-reaction gas labyrinth gas distribution device 16, and the two groups of gas flow control instruments 1 are utilized to respectively control the argon and the oxygen, so that the control precision is improved; the connector 5 is connected with the gas flowmeter 3 and the gas on-off solenoid valve 4 through threads, the connecting pipe 7 is connected with the gas on-off solenoid valve 4 and the goldenrain pair gas distribution flow distribution tee joint 8 through threads, and the sealing effect is guaranteed through threaded connection; the connection screw hole 21 is formed in the magnetron sputtering plasma physical surface basic baffle 17, the magnetron sputtering plasma physical surface basic baffle 17 is connected with the seal box 12 through a screw, the magnetron sputtering plasma physical surface adjustable baffle 18 is connected with the magnetron sputtering plasma physical surface basic baffle 17 in a sliding mode, the magnetron sputtering plasma physical surface basic baffle 17 and the magnetron sputtering plasma physical surface adjustable baffle 18 play a role in blocking, and the magnetron sputtering plasma physical surface adjustable baffle 18 can change positions according to requirements so as to adapt to different reaction environments; the gas input pipe 9 is connected with a goldenrain counter gas distribution shunt tee joint 8 and a labyrinth gas distribution device 10 through threads, gas diffusion small holes 11 of the labyrinth gas distribution device are integrally formed in the labyrinth gas distribution device 10, and the labyrinth gas distribution device 10 plays a gas distribution role, so that argon and oxygen can be fully distributed.
The working principle is as follows: in a vacuum state, working gas argon is actively diffused in the surrounding area of a magnetron sputtering rotary cathode goldenrain pair target 19, argon atoms are ionized to form stable sputtering plasma under the combined action of electric field force and magnetic field force, a magnetron sputtering rotary cathode goldenrain pair target reaction gas labyrinth gas distribution device 16 and a magnetron sputtering rotary cathode goldenrain pair target working gas labyrinth gas distribution device 15 are separated and then are arranged close to the magnetron sputtering rotary cathode goldenrain pair target 19, the argon ionization rate of the working gas of the gas distribution method is high, high-energy argon ions bombarding the magnetron sputtering rotary cathode goldenrain pair target 19 are increased, and the characteristic that the separated gas distribution method reactive magnetron sputtering coating film is deposited at high speed under the state close to metal sputtering is realized, in the reaction magnetron sputtering separation type gas distribution method, a magnetron sputtering rotating cathode-to-target working gas labyrinth gas distribution device 15 is arranged close to a sputtered glass substrate 14, more target atoms sputtered from a magnetron sputtering rotating cathode goldenrain pair target 19 in plasma react with reaction gas oxygen to generate compounds and deposit on the surface of the sputtered glass substrate 14, and the gas distribution method is characterized in that the magnetron sputtering rotating cathode-to-target working gas labyrinth gas distribution device 15 is arranged close to the sputtered glass substrate 14, so that the compounds generated on the magnetron sputtering rotating cathode goldenrain pair target 19 are rarely deposited, the poisoning phenomenon of the magnetron sputtering rotating cathode goldenrain pair target 19 is well reduced, and the magnetron sputtering coating process quality is more stable.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (4)
1. A reaction magnetron sputtering separation type gas distribution method is characterized in that: the magnetron sputtering device comprises a gas flow controller (1), a seal box (12), a magnetron sputtering plasma physical surface basic baffle plate (17) and a sputtered glass substrate (14), wherein the lower end of the gas flow controller (1) is connected with the seal box (12), a gas flow display window (2) is arranged at the front end of the gas flow controller (1), a gas inlet pipe (6) is arranged on one side of the gas flow controller (1), the gas outlet end of the gas inlet pipe (6) is connected with a gas flowmeter (3), the gas flowmeter (3) is connected with a gas on-off electromagnetic valve (4) through a connector (5), the gas on-off electromagnetic valve (4) is connected with a Koelreuterian gas distribution tee joint (8) through a connecting pipe (7), two ends of the Koreuteria gas distribution tee joint (8) are connected with gas input pipes (9), the gas outlet end of the gas input pipe (9) is connected with a labyrinth gas distribution device (10), a labyrinth gas distribution sealing device gas diffusion small hole (11) is arranged on the labyrinth gas distribution device (10), a sealing cover (13) is arranged at the front end of the sputtering box (12), a sputtered glass substrate (14), two magnetron sputtering working gas distribution devices (15) are arranged on the lower side of the glass substrate (14), and a magnetron sputtering working gas distribution rotary working gas distribution device (15) is arranged on the lower side of the glass substrate (15) of the cathode working gas distribution device The magnetron sputtering plasma generating target comprises magnetron sputtering plasma physical surface basic baffles (17), magnetron sputtering plasma physical surface adjustable baffles (18) are arranged between the magnetron sputtering plasma physical surface basic baffles (17), connecting screw holes (21) are formed in the front side and the two sides of the magnetron sputtering plasma physical surface basic baffles (17), two magnetron sputtering rotary cathode target-facing reaction gas labyrinth gas distribution devices (16) are arranged on the lower sides of the magnetron sputtering plasma physical surface basic baffles (17), two magnetron sputtering rotary cathode target-facing working gas labyrinth gas distribution devices (15) and the magnetron sputtering rotary cathode target-facing reaction gas labyrinth gas distribution devices (16) are both connected with labyrinth gas distribution devices (10) inside, two magnetron rotary cathode goldenrain generating targets (19) are arranged on the lower sides of the magnetron sputtering rotary cathode target-facing reaction gas labyrinth gas distribution devices (16), and magnetron sputtering rotary cathode goldenrain generating target-facing sources (20) are arranged on the inner sides of the magnetron sputtering rotary cathode goldenrain generating target magnetic field generating targets (19);
gas flow control appearance (1) is provided with two sets ofly, connects outside argon gas and oxygen respectively, and first group connecting pipe (7) are connected magnetron sputtering rotating cathode is inboard to target working gas maze gas distribution device (15) maze gas distribution device (10), the second group connecting pipe (7) are connected magnetron sputtering rotating cathode is inboard to target reaction gas maze gas distribution device (16) maze gas distribution device (10).
2. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the connector (5) is in threaded connection with the gas flowmeter (3) and the gas on-off solenoid valve (4), and the connecting pipe (7) is in threaded connection with the gas on-off solenoid valve (4) and the Koelreuteria target gas distribution shunt tee joint (8).
3. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the connecting wire hole (21) is formed in the magnetron sputtering plasma physical surface basic baffle (17), the magnetron sputtering plasma physical surface basic baffle (17) is connected with the sealing box (12) through a screw, and the magnetron sputtering plasma physical surface adjustable baffle (18) is connected with the magnetron sputtering plasma physical surface basic baffle (17) in a sliding mode.
4. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the gas input pipe (9) is connected with the Koelreuteria paniculata and target gas distribution shunt tee joint (8) and the labyrinth gas distribution device (10) through threads, and gas diffusion small holes (11) of the labyrinth gas distribution device are integrally formed in the labyrinth gas distribution device (10).
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| CN202011186430.9A CN112281126B (en) | 2020-10-29 | 2020-10-29 | Reaction magnetron sputtering separation type gas distribution method |
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| CN114959607B (en) * | 2022-05-16 | 2024-01-26 | 深圳市新邦薄膜科技有限公司 | Magnetron reactive sputtering process gas distribution device and gas distribution method |
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| JP2641351B2 (en) * | 1990-08-23 | 1997-08-13 | アプライド マテリアルズ インコーポレイテッド | Variable distribution gas flow reaction chamber |
| CN2873799Y (en) * | 2005-04-08 | 2007-02-28 | 北京实力源科技开发有限责任公司 | Magnetic sputter target with online cleaning function |
| CN2832829Y (en) * | 2005-04-27 | 2006-11-01 | 北京实力源科技开发有限责任公司 | Vacuum coating machine |
| KR101258882B1 (en) * | 2008-02-13 | 2013-04-29 | 가부시키가이샤 소니 디에이디씨 | Magnetron sputtering apparatus and magnetron sputtering method |
| CN201598329U (en) * | 2010-01-12 | 2010-10-06 | 深圳森丰真空镀膜有限公司 | Twin-target magnetron sputtering device provided with gas ion sources |
| CN201942743U (en) * | 2010-12-13 | 2011-08-24 | 中国科学院沈阳科学仪器研制中心有限公司 | Magnetic control target air-distribution structure |
| CN202139478U (en) * | 2011-07-11 | 2012-02-08 | 中国科学院金属研究所 | Device for depositing thin films on silicon carbon (SiC) fiber surface |
| CN202705451U (en) * | 2012-07-09 | 2013-01-30 | 中国建材国际工程集团有限公司 | Process gas binary gas distribution device for vacuum coating |
| CN202744622U (en) * | 2012-07-31 | 2013-02-20 | 许昌天地和光能源有限公司 | Gas distributing structure of magnetic control sputtering box body |
| CN103014642B (en) * | 2012-12-10 | 2015-04-01 | 广东志成冠军集团有限公司 | Adjustable gas distribution system and magnetron sputtering coating device comprising same |
| CN203212644U (en) * | 2013-03-25 | 2013-09-25 | 肇庆市腾胜真空技术工程有限公司 | Linear air distribution mechanism |
| CN203333750U (en) * | 2013-05-27 | 2013-12-11 | 深圳市生波尔机电设备有限公司 | Gas distribution device and vacuum magnetron sputtering coating equipment of gas distribution device |
| CN205603666U (en) * | 2015-08-25 | 2016-09-28 | 河南卓金光电科技有限公司 | Labyrinth gas distribution device |
| CN205710896U (en) * | 2016-03-16 | 2016-11-23 | 河南卓金光电科技有限公司 | A kind of multi-functional nanometer material magnetron sputtering film production line |
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