CN2832829Y

CN2832829Y - Vacuum coating machine

Info

Publication number: CN2832829Y
Application number: CN 200520017267
Authority: CN
Inventors: 刘阳
Original assignee: Beijing Powertech Co Ltd
Current assignee: Beijing Powertech Co Ltd
Priority date: 2005-04-27
Filing date: 2005-04-27
Publication date: 2006-11-01
Anticipated expiration: 2015-04-27

Abstract

The utility model provides a vacuum coating machine, which comprises a reactive magnetron sputtering coating machine of a magnetron sputtering target and the utility model also comprises one or more directional transmission elongate arc ion sources which are arranged in the reactive magnetron sputtering coating machine. The arrangement position of the arc ion source is separated with a work piece for a long distance, and the distance between an evaporation surface and the nearest point of a work piece rotation area is larger than 100 mm so as to reduce and decrease electric arc liquid drops. The evaporation direction of the arc ion source points at a film coating cavity half cycle at one side of an extract opening, a semi-enclosed local space can be enclosed by baffles or grid meshes with proper pore space, therefore the utility model can reduce and decrease the electric arc liquid drop with low cost so as to attain high quality film in industry. The utility model has the characteristics of high ionization rate, target material poisoning prevention, high deposition rate, strong binding force of the thin film, compact organization structure, smooth surface, etc.

Description

A kind of new vacuum coating equipment

Technical field

The utility model relates to technical field of vacuum plating, belongs to magnetron sputtering and arc evaporation filming equipment especially.

Background technology

In the reactive sputtering coating process, reaction synthetic compound film often is subjected to the insufficient restriction of ionization level, causes problems such as the low and membranous layer binding force of sedimentation rate is weak; Though the ionization level height of arc evaporation plated film, metal is local to be heaped but the drop of electric arc forms, not only cause the roughness of film surface higher, the more important thing is chemical reaction fully and uniformly can't take place, the result descends the total quality of film, more seriously this local defect can become the destruction source of aspects such as anti-environment of protection film and rub resistance wearing and tearing, exists similarly even more serious quality problems for optics and optoelectronic film etc.; In a vacuum plating unit, carry out arc ion plating and sputtering ion plating simultaneously, can improve ionization level, still there are problems such as above-mentioned electric arc drop commonplacely; In order to reduce drop, if with electric arc through complicated magnetic filtering system, can bring then that efficient descends significantly, cost increases substantially, occupy than problems such as large space and system complex, limited its application in vacuum plating industry machine to a certain extent.

Summary of the invention

The purpose of this utility model is to overcome the prior art deficiency, and a kind of new vacuum coating equipment is provided, can be with lower cost at industrial acquisition fine compound film.

For the content that realizes the major technique measure that the purpose of this utility model is taked includes:

The utility model provides a kind of vacuum plating unit, includes the reaction magnetocontrol sputtering coating equipment of magnetron sputtering target, also comprises the elongated shape arc source of or many beam transmission in addition, is placed in the reaction magnetocontrol sputtering coating equipment.This arc source can be worked in advance and also can be worked simultaneously or work alone with magnetron sputtering target.

Described magnetron sputtering coater comprises input aperture that is positioned at magnetron sputtering coater controlled sputtering source, reactant gases input aperture, rare gas element and the bleeding point that is positioned at magnetron sputtering coater one side.

The content of the major technique measure that the utility model is taked also includes: the elongated shape arc source of this beam transmission is equipped with rotatable target of long cylinder tubular or non-rotary rectangle target.

The content of the major technique measure that the utility model is taked also includes: the position of arc source and workpiece draw back more remote, and its generating surface, reduces the electric arc drop and reduces the most nearby greater than 100 millimeters apart from the Workpiece Rotating zone;

The arc source evaporation direction points to the plated film chamber half cycle of bleeding point one side, and with baffle plate or the suitable aperture plate of hole, surrounds semi-enclosed local space, thereby the electric arc drop is reduced and reduces with low cost, so that at industrial acquisition high-quality thin-film;

The major portion that participates in the controlled sputtering source of reactive sputtering plated film is arranged in plated film cavity cross section in bleeding point half cycle plated film cavity space far away;

The layout of gas distribution system: make the bleeding point of the input aperture of rare gas element, and rare gas element retention period in the plated film chamber is as far as possible fully contacted with the target surface of sputtering target away from the plated film cavity; The input aperture of reactant gases 7 is arranged near, close bleeding point one side of medullary ray of plated film cavity cross section and points to bleeding point, make reactant gases 7 retention period in the plated film chamber fully contact (being beneficial to react plated film) with workpiece and minimizing contacts with target, to reduce the chance that target is poisoned in the chemical reaction coating process as far as possible;

Effect of the present utility model is significant: prove by experiment, according to the utility model contain the infant industry arc source and with magnetic control sputtering vacuum coating integrated design and correlation technique thereof, provide a kind of ionization level high universal vacuum coating equipment, be preferably applied in the reactive sputtering plated film, can be with lower cost, at industrial acquisition fine compound film; The outstanding feature of this coating equipment is the ionization level height, prevent that target is poisoned, the sedimentation rate height, become film to have characteristics such as bonding force is strong, weave construction is fine and close, any surface finish.

Description of drawings

Fig. 1. new vacuum coating equipment agent structure synoptic diagram (Fig. 1 a, Fig. 1 b);

Fig. 2. the strip industry arc source synoptic diagram of powerful cylindrical target rotation and beam transmission.

Embodiment

Now in conjunction with the accompanying drawings the utility model is described further.

As Fig. 1 a, Fig. 1 b, shown in Figure 2,1-arc source wherein, 2-magnetron sputtering target, 3-bleeding point, 4-aperture plate or baffle plate, 5-arc power, 6-workpiece, 7-reactant gases, 8-rare gas element.

Agent structure: as Fig. 1 a, shown in Fig. 1 b, in the reaction magnetocontrol sputtering coating equipment, add the elongated cylindrical industry arc source 1 of one or more novel high-power beam transmission targets rotation, work in advance or simultaneously; Arc source 1 and the integrated design of reaction magnetocontrol sputtering ion film plating make the magnetron sputtering ion plating facility that high ionization level be arranged.

The position of arc source 1 and workpiece 6 draw back more remote, and its generating surface is 100 millimeters the most nearby apart from workpiece 6 rotary areas, the electric arc drop is reduced and reduce;

As shown in Figure 2, that arc source 1 has is high-power (2～15kW), target rotation and beam transmission characteristic, continue highdensity ion of emission and electronics;

Arc source 1 (water-cooled) draws back certain distance with workpiece 6 and points to the half cycle plated film cavity space at bleeding point 3 places, surround semi-enclosed local space with baffle plate or aperture plate 4, thereby the electric arc drop is reduced and reduce with low cost, reach the scope that industrial acquisition high-quality thin-film is allowed; The most of coating equipments that can be used for vapour deposition (PVD and CVD-chemical vapour deposition); Simultaneously can prevent that also electric arc target and magnetron sputtering target from polluting mutually;

Workpiece 6 biasing electric fields that utilize the formed sealing electromagnetic field of magnetron sputtering target 2 colonies and add, constraint, quicken, propagation and guiding charged particle to workpiece by plated film and the needed space of sputtering target work, and improve ionization level and keep high ionization level, even magnetron sputtering coater has constituted practical infant industry ion source;

Controlled sputtering source is arranged in the plated film cavity cross section from bleeding point 3 far away partly distinguishing;

The layout of gas distribution system: make the bleeding point 3 of the input aperture of rare gas element 8, rare gas element 8 retention period in the plated film chamber is fully contacted with the target surface of magnetron sputtering target 2 as far as possible away from the plated film cavity; The input aperture of reactant gases 7 is arranged near, close bleeding point 3 one sides of medullary ray of plated film cavity cross section, make it that the retention period fully contacts with workpiece 6 as far as possible in the plated film chamber, be beneficial to react plated film and reduce and contact, with the chance of target poisoning in the minimizing chemical reaction coating process with target;

With high ionization level reaction synthetic compound film the time,,, improve the bonding force of film and matrix significantly so that the control ionic injects share and produce the thickness of blended layer between workpiece 6 and film with subatmospheric high-energy bombardment workpiece 6.

Claims

1. new vacuum coating equipment includes the reaction magnetocontrol sputtering coating equipment of magnetron sputtering target, it is characterized in that: also comprise the elongated shape arc source of or many beam transmission, be placed in the reaction magnetocontrol sputtering coating equipment.

2, according to the described vacuum plating unit of claim 1, it is characterized in that: described magnetron sputtering coater comprises input aperture that is positioned at magnetron sputtering coater controlled sputtering source, reactant gases input aperture, rare gas element and the bleeding point that is positioned at magnetron sputtering coater one side.

3, according to claim 1 or 2 described a kind of vacuum plating units, it is characterized in that: the elongated shape arc source of this beam transmission is equipped with rotatable target of long cylinder tubular or non-rotary rectangle target.

4, according to claim 1 or 2 described a kind of vacuum plating units, it is characterized in that: the generating surface of arc source apart from the Workpiece Rotating zone the most nearby greater than 100 millimeters.

5, according to the described a kind of vacuum plating unit of claim 2, it is characterized in that: the arc source evaporation direction points to the plated film chamber half cycle of bleeding point one side.

6, according to the described a kind of vacuum plating unit of claim 3, it is characterized in that: the magnetron sputtering target that will participate in the reactive sputtering plated film is arranged in plated film cavity cross section in bleeding point half district far away.

7, according to the described a kind of vacuum plating unit of claim 2, it is characterized in that: the input aperture of rare gas element is away from the bleeding point of plated film cavity, the input aperture of reactant gases is arranged near the medullary ray of plated film cavity cross section, and close bleeding point one side is also pointed to bleeding point.