CN202730223U - Ion sputter coating device - Google Patents
Ion sputter coating device Download PDFInfo
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- CN202730223U CN202730223U CN 201220382645 CN201220382645U CN202730223U CN 202730223 U CN202730223 U CN 202730223U CN 201220382645 CN201220382645 CN 201220382645 CN 201220382645 U CN201220382645 U CN 201220382645U CN 202730223 U CN202730223 U CN 202730223U
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Abstract
The utility model discloses an ion sputter coating device, which comprises a vacuum coating chamber, and a plasma transmitting device positioned on one side of the vacuum coating chamber and used for transmitting sputter ions, wherein a base plate positioned at the top part of the vacuum coating chamber, a tray positioned at the bottom part of the vacuum coating chamber, a target material positioned on the tray, and an auxiliary ion transmitting device positioned on one side of the tray, which are all accommodated in the inner space of the vacuum coating chamber; a transmitting port of the auxiliary ion transmitting device rightly faces to the plate surface of the base plate; and moreover, a port of the plasma transmitting device is communicated with the inner space of the vacuum coating chamber and is wound with a transmitting electromagnetic coil. The ion sputter coating device has simple structure and high target material utilization rate, can efficiently inhibit arc discharge on the surface of the target material, is extremely stable in sputtering deposition, is practical, and has wide market space.
Description
Technical field
The utility model relates to the plated film field, relates in particular to the ion sputtering film coating device under a kind of vacuum environment.
Background technology
Vacuum magnetron sputtering coating film is the widely used a kind of deposition apparatus in sputter coating field, this its principle of class device is on vacuum secondary sputter basis, by introduce magnetic pole at the target back side, change the Distribution of Magnetic Field of target material surface, improve the ionization efficient of plasma body in the vacuum chamber with this, thereby improve the sputtering yield of target.The intrinsic ununiformity because target back side magnetic line of force distributes, the ionization efficient local strengthening that causes plasma body is so that the target material surface sputter also presents is inhomogeneous, in the high zone of ionization efficient, sputtering yield is high, target consumption is fast, and in the inefficient zone of ionization, sputtering yield is low, target consumption is slow, this sputter ununiformity causes target utilization very low, in a single day the local bottom that is splashed to that namely target consumption is fast, and whole target just can't re-use.Usually target utilization only has generally about 30%.Simultaneously, this sputter ununiformity also is easy to cause the target intoxicating phenomenon occurring in reactive magnetron sputtering, forms dielectric layer so that reactant gases is covered in the target surface, causes the phenomenon frequent occurrence of arcing discharge.Prior art employing pulse dc power comes the controlled discharge time with the arcing of inhibition target surface, but does not fundamentally address this problem, even especially in the reactive sputtering of Si target and Al target, adopt pulse dc power, or can frequent generation arcing phenomenon.The inhomogeneous etch rate of further whole target surface causes sedimentation rate to drift about, and is particularly serious in reactive sputtering, causes the unstable of reactive sputter-deposition process.
The utility model content
The utility model proposes a kind of ion sputtering film coating device, to be that the sputter of target material surface is inhomogeneous in the prior art cause it the target intoxicating phenomenon to occur in reactive sputtering to the technical problem that mainly solves, and then make reactant gases be covered in target surface formation dielectric layer, the phenomenon frequent occurrence that causes the arcing discharge, and the inhomogeneous etch rate of target surface causes settling to drift about, and causes the instable problem of sputter deposition process.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of ion sputtering film coating device is provided, comprise vacuum film coating chamber and be positioned at the plasma launching device that is used for emission plasma sputter bundle of described vacuum film coating chamber one side, the substrate that is positioned at the vacuum film coating chamber top that the interior space of described vacuum film coating chamber is equipped with, be positioned at the pallet of vacuum film coating chamber bottom, be positioned at the target on the described pallet and be positioned at the assisting ion launching device of pallet one side, the emission port of described assisting ion launching device is right against substrate surface, the port of described plasma launching device is connected with the interior space of vacuum plating, and the port of plasma launching device is wound with the emission solenoid.
Preferably, also comprise the deflection solenoid, described deflection solenoid is around in the projection of the bottom outside of described vacuum film coating chamber, and described deflection solenoid is in the bottom of described pallet.
Preferably, also comprise swivel mount, described substrate hangs on the vacuum film coating chamber top by swivel mount.
Preferably, described pallet is rotatable rotating disk, and the quantity of described target is the 4-8 piece, and described target is fixed on the rotating disk equably.
Preferably, described target is shaped as circle or rectangle.
Useful technique effect of the present utility model is: the sputter of target material surface is inhomogeneous to cause it the target intoxicating phenomenon to occur in reactive sputtering, and then make reactant gases be covered in target surface formation dielectric layer, the phenomenon frequent occurrence that causes the arcing discharge, and the inhomogeneous etch rate of target surface causes settling to drift about, the instable problem that causes sputter deposition process, a kind of ion sputtering film coating device is provided, by the using plasma launching device with at the port of plasma emission device the emission solenoid is set, can obtain the uniform plasma body of high-density, formed large flux at target surface, uniform plasma sputter bundle, realize the sputter that whole target surface is uniform and stable, avoided the low shortcoming of conventional sputter target utilization.In addition, by adopting assisting ion source launching device, and with the emission port of assisting ion source launching device over against substrate surface, so that the sputter reaction mainly occurs near the substrate, reduced the probability of reactant gases at target surface reaction formation compound, thus establishment target material surface arcing electric discharge phenomena, the utility model is simple in structure, the utilization ratio of target is high, can effectively suppress target material surface arcing discharge, stablizing of sputtering sedimentation, practical, have the wide market space.
Description of drawings
Fig. 1 is the structural representation of the utility model ion sputtering film coating device;
Fig. 2 is the fundamental diagram of the utility model ion sputtering film coating device.
Label declaration:
1-plasma launching device, 11-launches solenoid;
The 2-vacuum film coating chamber, 21-assisting ion launching device, 22-substrate, 23-swivel mount, 24-pallet, 25-deflection solenoid, 26-target, 210-emission port.
Embodiment
By describing technology contents of the present utility model, structural attitude in detail, being realized purpose and effect, below in conjunction with embodiment and cooperate accompanying drawing to give in detail explanation.
See also Fig. 1, the utility model ion sputtering film coating device, comprise vacuum film coating chamber 2 and be positioned at the plasma launching device 1 that is used for emission plasma sputter bundle of described vacuum film coating chamber 2 one sides, the substrate 22 that is positioned at vacuum film coating chamber 2 tops that the interior space of described vacuum film coating chamber 2 is equipped with, be positioned at the pallet 24 of vacuum film coating chamber 2 bottoms, be positioned at the target 26 on the described pallet 24 and be positioned at the assisting ion launching device 21 of pallet 24 1 sides, the emission port 210 of described assisting ion launching device 21 is right against substrate 22 plate faces, the port of described plasma launching device 1 is connected with the interior space of vacuum plating, and the port of plasma launching device 1 is wound with emission solenoid 11, if ion sputtering occurs a large amount of energetic plasma bombardment target surfaces must be arranged, in the plasma producing apparatus outlet emission solenoid 11 emission solenoids 11 are installed for this reason and are used for accelerating working gas ionization, form high density plasma.
In above-described embodiment, for solving reactive sputtering target surface arcing electric discharge phenomena, plasma launching device 1 is installed in vacuum film coating chamber 2 sides, this device can be Hall type ion source or Kaufman type ion source, the port bore of the refreshing device of plasma method is less, be used for working gas oxygen or the nitrogen of reactive sputtering are carried out ionization by this ion source, the reactant gases ionic fluid is directly sprayed near the substrate 22, so that reactive sputtering occurs near substrate 22, and the speed of reaction of its reactant gases ion and sputtered atom will be much larger than the speed of reaction of free state gas and sputtered atom like this.
In a preferred embodiment, also be wound with deflection solenoid 25 on the projection of described vacuum film coating chamber 2 bottom outside, described deflection solenoid 25 is in the bottom of described pallet 24, controlling plasma body by deflection solenoid 25 distributes at target 26 surface uniforms, can efficiently solve magnetron sputtering Distribution of Magnetic Field non-uniform phenomenon, but also greatly improve the utilization ratio of target 26.And in the conventional art magnetic pole is set in the pallet bottom, and the utilization ratio of target 26 is reduced.
In a preferred embodiment, vacuum film coating chamber 2 also comprises swivel mount 23, and described substrate 22 hangs on vacuum film coating chamber 2 tops by swivel mount 23.Substrate 22 separates with vacuum film coating chamber 2 top boards, makes first ion be unlikely to make to be sprayed directly on on the top board and affects the utilization ratio of ion, second is convenient to the operation that is rotated to substrate 22.In above-described embodiment, described pallet 24 is rotatable rotating disk, and the quantity of described target 26 is the 4-8 piece, and described target 26 is fixed on the rotating disk equably.Simultaneously, place 4-8 piece target 26, can improve the utilization ratio to ionic fluid, increase work efficiency.In order further to improve the utilization ratio of ionic fluid, can target 26 be designed to other shapes such as circle, rectangle, square according to practical situation.
Fig. 2 is the fundamental diagram of the utility model vacuum coater, get Si target 26 reactive sputterings commonly used and generate SiO2, under the effect of plasma launching device 1, high energy Ar+ ion beam bombardment Si target 26 surfaces form sputter Si atom, under the cascade collision effect, the Si atom transports to substrate 22 directions in vacuum chamber, the assisting ion launching device 21 of while take oxygen O2 as working gas, oxonium ion O2-to substrate 22 directions reflection ionization, near substrate 22, Si atom and O2-ionic reaction are in conjunction with generating SiO2, flow by suitable adjustment assisting ion source working gas oxygen O2, can control the oxonium ion O2-major part and Si atomic reaction of emission, so just effectively avoid excessive oxonium ion to vacillate target surface and form compound, thereby reduce the probability of target surface arcing discharge.Therefore, ion sputtering film coating device of the present utility model can improve target 26 utilization ratios effectively, and reduces the probability that the arcing discharge appears in the target surface poisoning.
The utility model is different from that the sputter of target material surface is inhomogeneous in the prior art causes it the target intoxicating phenomenon to occur in reactive sputtering, and then make reactant gases be covered in target surface formation dielectric layer, the phenomenon frequent occurrence that causes the arcing discharge, and the inhomogeneous etch rate of target surface causes settling to drift about, the instable problem that causes sputter deposition process, a kind of ion sputtering film coating device is provided, by the using plasma launching device with at the port of plasma emission device the emission solenoid is set, can obtain the uniform plasma body of high-density, formed large flux at target surface, uniform plasma sputter bundle, realize the sputter that whole target surface is uniform and stable, avoided the low shortcoming of conventional sputter target utilization.In addition, by adopting assisting ion source launching device, and with the emission port of assisting ion source launching device over against substrate surface, so that the sputter reaction mainly occurs near the substrate, reduced the probability of reactant gases at target surface reaction formation compound, thus establishment target material surface arcing electric discharge phenomena, the utility model is simple in structure, the utilization ratio of target is high, can effectively suppress target material surface arcing discharge, stablizing of sputtering sedimentation, practical, have the wide market space.
The above only is embodiment of the present utility model; be not so limit claim of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification sheets and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (5)
1. ion sputtering film coating device, it is characterized in that, comprise vacuum film coating chamber and be positioned at the plasma launching device that is used for emission plasma sputter bundle of described vacuum film coating chamber one side, the substrate that is positioned at the vacuum film coating chamber top that the interior space of described vacuum film coating chamber is equipped with, be positioned at the pallet of vacuum film coating chamber bottom, be positioned at the target on the described pallet and be positioned at the assisting ion launching device of pallet one side, the emission port of described assisting ion launching device is right against substrate surface, the port of described plasma launching device is connected with the interior space of vacuum plating, and the port of plasma launching device is wound with the emission solenoid.
2. ion sputtering film coating device according to claim 1 is characterized in that, also comprises the deflection solenoid, and described deflection solenoid is around in the projection of the bottom outside of described vacuum film coating chamber, and described deflection solenoid is in the bottom of described pallet.
3. ion sputtering film coating device according to claim 1 is characterized in that, also comprises swivel mount, and described substrate hangs on the vacuum film coating chamber top by swivel mount.
4. ion sputtering film coating device according to claim 1 is characterized in that, described pallet is rotatable rotating disk, and the quantity of described target is the 4-8 piece, and described target is fixed on the rotating disk equably.
5. each described ion sputtering film coating device is characterized in that according to claim 1-4, described target be shaped as circle or rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220382645 CN202730223U (en) | 2012-08-03 | 2012-08-03 | Ion sputter coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220382645 CN202730223U (en) | 2012-08-03 | 2012-08-03 | Ion sputter coating device |
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| Publication Number | Publication Date |
|---|---|
| CN202730223U true CN202730223U (en) | 2013-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220382645 Expired - Fee Related CN202730223U (en) | 2012-08-03 | 2012-08-03 | Ion sputter coating device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105247660A (en) * | 2013-03-15 | 2016-01-13 | 格伦·莱恩家族有限责任有限合伙企业 | Adjustable mass resolving aperture |
| CN110670033A (en) * | 2018-07-03 | 2020-01-10 | 定西中庆玄和玻璃科技有限公司 | Process method for ion sputtering coating in vacuum environment |
| CN114164404A (en) * | 2021-11-13 | 2022-03-11 | 东莞市华升真空镀膜科技有限公司 | Vacuum coating equipment and coating method |
-
2012
- 2012-08-03 CN CN 201220382645 patent/CN202730223U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105247660A (en) * | 2013-03-15 | 2016-01-13 | 格伦·莱恩家族有限责任有限合伙企业 | Adjustable mass resolving aperture |
| CN105247660B (en) * | 2013-03-15 | 2018-06-12 | 格伦·莱恩家族有限责任有限合伙企业 | Scalable quality resolving aperture |
| CN110670033A (en) * | 2018-07-03 | 2020-01-10 | 定西中庆玄和玻璃科技有限公司 | Process method for ion sputtering coating in vacuum environment |
| CN114164404A (en) * | 2021-11-13 | 2022-03-11 | 东莞市华升真空镀膜科技有限公司 | Vacuum coating equipment and coating method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130213 Termination date: 20170803 |
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| CF01 | Termination of patent right due to non-payment of annual fee |