CN208414537U - One kind carrying out baffle used in ion sputtering film coating technique in vacuum environment - Google Patents
One kind carrying out baffle used in ion sputtering film coating technique in vacuum environment Download PDFInfo
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- CN208414537U CN208414537U CN201821046159.7U CN201821046159U CN208414537U CN 208414537 U CN208414537 U CN 208414537U CN 201821046159 U CN201821046159 U CN 201821046159U CN 208414537 U CN208414537 U CN 208414537U
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Abstract
The utility model discloses one kind to carry out baffle used in ion sputtering film coating technique in vacuum environment, including vacuum coating chamber, plasma emission device, assisted plasma emitter, turntable and target, the plasma emission device is set to the side of vacuum coating chamber, the emission port of plasma emission device is directed at turntable, the turntable is set to the bottom surface of the inside of vacuum coating chamber, target is set to the bottom surface of turntable, it is characterized by also including baffles, the baffle is fixed on the upper top surface inside plasma emission device, baffle is right against target setting, baffle face target fixes one layer of rough matte layer on one side；Assisted plasma emitter is four, is individually fixed on four sides of vacuum coating chamber, the emission port face matte layer of assisted plasma emitter.The utility model structure is simple, target utilization rate is high, practical, has a vast market space.
Description
Technical field
The utility model ion sputtering film coating technical field carries out ion sputtering more particularly to one kind in vacuum environment
Baffle used in coating process.
Background technique
Vacuum magnetron sputtering coating film is a kind of widely used precipitation equipment in sputter coating field, its principle of this kind of device is
On the basis of the sputtering of vacuum second level, by introducing magnetic pole at the target back side, changing the Distribution of Magnetic Field of target material surface, mentioned with this
The efficiency of ionization of high vacuum chamber piasma, to improve the sputtering yield of target.Since magnetic line of force distribution in the target back side is solid
Some inhomogeneities lead to the efficiency of ionization local strengthening of plasma so that target material surface sputtering also present it is uneven, from
Change high-efficient region, sputtering yield is high, and target consumption is fast, and in the low region of efficiency of ionization, sputtering yield is low, target consumption
Slowly, this sputtering inhomogeneities causes target utilization very low, that is, the place of target consumption fastly is once splashed to bottom, whole
A target can not just reuse.Usual target utilization is only generally 30% or so.Meanwhile this sputtering inhomogeneities is also very
It is easy to cause and occurs target poison ing phenomenon in reactive magnetron sputtering, so that reaction gas is covered in target surface and forms dielectric layer, lead
The phenomenon that causing arcing electric discharge frequently occurs.
The prior art uses pulse dc power to control discharge time to inhibit target surface arcing, but does not solve fundamentally
The problem, even if especially using pulse dc power in the reactive sputtering of Si target and Al target, it still can arcing frequent occurrence
Phenomenon.Further the entire non-uniform etch rate of target surface causes deposition rate that can drift about, especially tight in reactive sputtering
Weight, leads to the unstability of reactive sputter-deposition process.
In addition, finding in existing production, ion sputtering film coating technique is carried out because being in vacuum environment, with sputtering material
SiO2Increase, a small amount of deposition can be formed in the inner wall surface of vacuum film coating chamber, since the adsorption capacity of inner wall is not powerful, deposit
It can fall on product, cause product unqualified, bring great loss.
Therefore, how to solve the problems of the above-mentioned prior art becomes the direction of field technical staff effort.
Utility model content
The purpose of this utility model is just to provide one kind and carries out used in ion sputtering film coating technique in vacuum environment
Baffle can be fully solved in place of above-mentioned the deficiencies in the prior art.
The purpose of this utility model is realized by following technical proposals: one kind carrying out ion sputtering plating in vacuum environment
Baffle used in membrane process, including vacuum coating chamber, plasma emission device, assisted plasma emitter, turntable and
Target, the plasma emission device are set to the side of vacuum coating chamber, and the emission port alignment of plasma emission device turns
Disk, the turntable are set to the bottom surface of the inside of vacuum coating chamber, and target is set to the bottom surface of turntable, it is characterised in that:
It further include baffle, the baffle is fixed on the upper top surface inside plasma emission device, and baffle is right against target setting, baffle
Face target fixes one layer of rough matte layer on one side；Assisted plasma emitter is four, is individually fixed in true
On four sides of empty coating chamber, the emission port face matte layer of assisted plasma emitter.
The port of the plasma emission device is connected with the inner cavity of vacuum coating chamber as a preferred method,
And transmitting electromagnetic coil is wound at the port of plasma emission device.
The turntable is rotatable turntable as a preferred method, and turntable is circle, the target below turntable
It is one, and target is circle.
The baffle is circular configuration as a preferred method, and matte layer is fixed on the outer surface of baffle.
Compared with prior art, the utility model has the beneficial effects that: it is described in the utility model in vacuum environment
Baffle used in ion sputtering film coating technique is carried out, increases by one layer of matte layer on baffle, extra deposited material is adsorbed
On its surface, prevent deposited material from falling, so that the yield rate of production products obtained therefrom is higher；Pass through setting transmitting electromagnetic wire simultaneously
Circle obtains the uniform plasma of high density, realizes the uniform and stable sputtering of entire target surface；Assisting ion source emitter is set
It sets, emission port is injected respectively from surrounding, face baffle, so that sputtering reaction occurs near baffle, reduce reaction gas
The probability to form compound is reacted in target surface；Effectively inhibit target material surface arcing electric discharge phenomena.The utility model structure is simple, target
The utilization rate of material is high, target material surface arcing can effectively be inhibited to discharge, and the stabilization of sputtering sedimentation is well, practical, has wide
The wealthy market space.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
In attached drawing 1: vacuum coating chamber -1, plasma emission device -2, assisted plasma emitter -3 emit electromagnetism
Coil -4, emission port -5, turntable -6, target -7, baffle -8, matte layer -9.
Specific embodiment
The utility model is further described with attached drawing combined with specific embodiments below.
As shown in Figure 1, one kind carries out baffle used in ion sputtering film coating technique, including Vacuum Deposition in vacuum environment
Membrane cavity room 1, plasma emission device 2, assisted plasma emitter 3, turntable 6, target 7 and baffle 8.The plasma transmitting
Device 2 is set to the side of vacuum coating chamber 1, the port of the plasma emission device 2 and the inner cavity of vacuum coating chamber 1
It is connected, and is wound with transmitting electromagnetic coil 4 at the port of plasma emission device 2.Emit electromagnetic coil by setting, obtains high
The plasma of even density realizes the uniform and stable sputtering of entire target surface.The emission port of plasma emission device 2 is directed at turntable
6, the turntable 6 is set to the bottom surface of the inside of vacuum coating chamber 1, and target 7 is set to the bottom surface of turntable 6, the turntable 6
For rotatable turntable, turntable 6 is circle, and the target 7 positioned at 6 lower section of turntable is one, and target 7 is circle.
The baffle 8 is fixed on the upper top surface inside plasma emission device 2, and baffle 8 is right against the setting of target 7, gear
8 face target 7 of plate fixes one layer of rough matte layer 9 on one side；The baffle 8 is circular configuration, and matte layer 9 is fixed on
The outer surface of baffle 8.It is described in the utility model that baffle used in ion sputtering film coating technique is carried out in vacuum environment,
Increase by one layer of matte layer on baffle, extra deposited material is adsorbed on its surface, prevents deposited material from falling, so that production institute
The yield rate for obtaining product is higher；It can achieve 98%.
Assisted plasma emitter 3 is four, is individually fixed on four sides of vacuum coating chamber 1, auxiliary etc.
The 5 face matte layer 9 of emission port of ion launcher 3.Four assisted plasma emitters, increase cavity internal reflection from
The oxonium ion O of change2 -, can be more compared to an assisted plasma emitter is only used only in existing ion sputtering technique
Quickly, and most importantly, can guarantee Si atom and O2 -Ionic reaction, which combines, generates SiO2Control is near baffle.
The setting of assisting ion source emitter is injected emission port from surrounding, face baffle respectively, so that sputtering reaction occurs keeping off
Near plate, reduces reaction gas and react the probability to form compound in target surface；Effectively inhibit target material surface arcing electric discharge phenomena.
Application Example:
Common Si target reactive sputtering is taken to generate SiO2, under the action of plasma emission device, high energy Ar+ ion beam
It bombards Si target material surface and forms sputtering Si atom, under cascade collision effect, Si atom is transported in vacuum chamber to baffle direction,
Simultaneously with oxygen O2For the assisting ion emitter of working gas, the oxonium ion of ionization is reflected from four direction to baffle direction
O2 -, near baffle, Si atom and O2 -Ionic reaction, which combines, generates SiO2, pass through adjustment assisting ion source appropriate working gas
Oxygen O2Flow, can control the oxonium ion O of transmitting2 -Most of and Si atomic reaction, thus effectively avoids excess
Oxonium ion vacillate to target surface and form compound, thus reduce target surface arcing electric discharge probability.Therefore, the utility model
Ion sputtering film coating device can effectively improve target utilization, and reduce target surface poisoning and the probability of arcing electric discharge occur.
The utility model structure is simple, target utilization rate is high, target material surface arcing can effectively be inhibited to discharge, sputtering
The stabilization of deposition is well, practical, has a vast market space.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (4)
1. one kind in vacuum environment carry out ion sputtering film coating technique used in baffle, including vacuum coating chamber, etc. from
Sub- emitter, assisted plasma emitter, turntable and target, the plasma emission device are set to vacuum coating chamber
Side, the emission port of plasma emission device is directed at turntable, and the turntable is set to the bottom surface of the inside of vacuum coating chamber,
Target is set to the bottom surface of turntable, it is characterised in that: further includes baffle, the baffle is fixed on inside plasma emission device
Upper top surface on, baffle is right against target setting, and baffle face target fixes one layer of rough matte layer on one side；Auxiliary
Plasma emission device is four, is individually fixed on four sides of vacuum coating chamber, assisted plasma emitter
Emission port face matte layer.
2. according to claim 1 carry out baffle used in ion sputtering film coating technique, feature in vacuum environment
Be: the port of the plasma emission device is connected with the inner cavity of vacuum coating chamber, and the end of plasma emission device
Transmitting electromagnetic coil is wound at mouthful.
3. according to claim 1 carry out baffle used in ion sputtering film coating technique, feature in vacuum environment
Be: the turntable is rotatable turntable, and turntable is circle, and the target below turntable is one, and target is circle.
4. according to claim 1 carry out baffle used in ion sputtering film coating technique, feature in vacuum environment
Be: the baffle is circular configuration, and matte layer is fixed on the outer surface of baffle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821046159.7U CN208414537U (en) | 2018-07-03 | 2018-07-03 | One kind carrying out baffle used in ion sputtering film coating technique in vacuum environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821046159.7U CN208414537U (en) | 2018-07-03 | 2018-07-03 | One kind carrying out baffle used in ion sputtering film coating technique in vacuum environment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208414537U true CN208414537U (en) | 2019-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821046159.7U Active CN208414537U (en) | 2018-07-03 | 2018-07-03 | One kind carrying out baffle used in ion sputtering film coating technique in vacuum environment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109652773A (en) * | 2019-02-25 | 2019-04-19 | 京东方科技集团股份有限公司 | One kind preventing component and evaporated device |
| CN110670033A (en) * | 2018-07-03 | 2020-01-10 | 定西中庆玄和玻璃科技有限公司 | Process method for ion sputtering coating in vacuum environment |
-
2018
- 2018-07-03 CN CN201821046159.7U patent/CN208414537U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110670033A (en) * | 2018-07-03 | 2020-01-10 | 定西中庆玄和玻璃科技有限公司 | Process method for ion sputtering coating in vacuum environment |
| CN109652773A (en) * | 2019-02-25 | 2019-04-19 | 京东方科技集团股份有限公司 | One kind preventing component and evaporated device |
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