CN110670033A - Process method for ion sputtering coating in vacuum environment - Google Patents
Process method for ion sputtering coating in vacuum environment Download PDFInfo
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- CN110670033A CN110670033A CN201810722529.2A CN201810722529A CN110670033A CN 110670033 A CN110670033 A CN 110670033A CN 201810722529 A CN201810722529 A CN 201810722529A CN 110670033 A CN110670033 A CN 110670033A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention discloses a process method for carrying out ion sputtering coating in a vacuum environment, which comprises the following steps: the method comprises the steps that firstly, a main power supply is turned on, main control power is started, a substrate is placed after a vacuum coating chamber is opened, and the position of the substrate and the position of a target are determined; secondly, starting the mechanical pump and starting the molecular pump; thirdly, turning on a heating temperature control power supply and closing a composite vacuum gauge, turning on an ionization vacuum gauge, introducing argon gas, opening an air path valve, turning on an ion source after stabilizing a flowmeter, and starting cleaning; fourthly, after cleaning, according to the reverse order of ion source parameter adjustment, zeroing the parameters, closing the ion source, and placing the flowmeter in a closing gear; and fifthly, adjusting and controlling the reading of the ionization vacuum gauge to be 1Pa, adjusting the direct current or radio frequency power supply to the required power, and starting coating. The technological method can effectively inhibit arc discharge on the surface of the target material, has good stability of sputtering deposition, strong practicability and wide market space.
Description
Technical Field
The invention belongs to the technical field of ion sputtering coating, and particularly relates to a process method for carrying out ion sputtering coating in a vacuum environment.
Background
The principle of the device is that on the basis of vacuum secondary sputtering, a magnetic pole is introduced into the back of a target material to change the magnetic field distribution on the surface of the target material, so that the ionization efficiency of plasma in a vacuum chamber is improved, and the sputtering efficiency of the target material is improved. Because the inherent nonuniformity of the magnetic force lines on the back of the target material causes the local strengthening of the ionization efficiency of the plasma, the sputtering on the surface of the target material is also nonuniform, the sputtering efficiency is high in a region with high ionization efficiency, the consumption of the target material is fast, the sputtering efficiency is low and the consumption of the target material is slow in a region with low ionization efficiency, and the sputtering nonuniformity causes the utilization rate of the target material to be very low, namely once the target material is sputtered to the bottom in a place with fast consumption, the whole target material can not be reused. The target utilization rate is only about 30% generally. Meanwhile, the sputtering nonuniformity can easily cause target poisoning in magnetron reactive sputtering, so that reaction gas covers the surface of a target to form a dielectric layer, and arcing discharge is caused frequently.
In the prior art, a pulse direct current power supply is adopted to control the discharge time so as to inhibit the arc discharge of the target surface, but the problem is not fundamentally solved, and particularly, the arc discharge phenomenon can still occur frequently even if the pulse direct current power supply is adopted in the reactive sputtering of the Si target and the Al target. Further, the non-uniform etch rate across the target surface causes the deposition rate to drift, which is particularly severe in reactive sputtering, resulting in instability of the reactive sputtering deposition process.
In addition, in the prior production, SiO is found along with the sputtering material because the ion sputtering coating process is carried out in the vacuum environment2The increase of (2) can form a small amount of deposits on the surface of the inner wall of the vacuum coating chamber, and the deposits can fall on products due to weak adsorption force of the inner wall, so that the products are unqualified and great loss is brought.
Therefore, how to solve the above-mentioned drawbacks of the prior art becomes the direction of efforts of those skilled in the art.
Disclosure of Invention
The invention aims to provide a process method for carrying out ion sputtering coating in a vacuum environment, which can completely solve the defects of the prior art.
The purpose of the invention is realized by the following technical scheme: a process method for carrying out ion sputtering coating in a vacuum environment comprises a main power supply, a main control power supply, a lifter, a vacuum coating chamber, a mechanical pump, a molecular pump, a heating temperature control power supply, a composite vacuum gauge and an ionization vacuum gauge, wherein the ion sputtering coating comprises the following steps:
the method comprises the steps that firstly, a main power supply is turned on, main control power is started, a substrate is placed after a vacuum coating chamber is opened, and the position of the substrate and the position of a target are determined; after the substrate and the target are prepared, the elevator descends to the vacuum coating chamber for sealing;
secondly, starting the mechanical pump, pumping for 100s, then opening the composite vacuum gauge, and when the reading is 10E-1In the magnitude, starting the molecular pump, and simultaneously preheating ions, cleaning and turning on a direct current or jet current power supply and a flow display instrument, wherein the frequency of the molecular pump is 400 HZ;
thirdly, turning on a heating temperature control power supply, and when the vacuum degree reaches 5x10-4When Pa is needed, the composite vacuum gauge is closed, the ionization vacuum gauge is started, argon is introduced, the flow rate is 20L/min, the gas path valve is opened, the ion source is opened after the flowmeter is stabilized, and the acceleration is sequentially adjusted to 200V-250V, the neutralization is 10A, the anode is 90V, the cathode is 10V, and the screen is 350V; starting cleaning;
fourthly, after cleaning, according to the reverse order of ion source parameter adjustment, zeroing the parameters, closing the ion source, and placing the flowmeter in a closing gear;
fifthly, adjusting and controlling the reading of the ionization vacuum gauge to be 1Pa, adjusting a direct current or radio frequency power supply to the required power, and starting coating;
and sixthly, after the film coating is finished, closing the direct current or radio frequency power supply, closing the argon valve, the flow display instrument and the ionization vacuum gauge, and closing the main power supply.
The utility model provides a vacuum coating chamber who uses in ion sputtering coating process, its includes plasma emitter, supplementary plasma emitter, carousel and target, plasma emitter sets up in one side of vacuum coating chamber, and the transmission mouth of plasma emitter aims at the carousel, the carousel sets up in the bottom surface of the inside of vacuum coating chamber, and the target sets up in the lower bottom surface of carousel, its characterized in that: the plasma emission device comprises a plasma emission device, a baffle plate and a target material, wherein the baffle plate is fixed on the upper top surface inside the plasma emission device, the baffle plate is arranged right opposite to the target material, and an uneven rough surface layer is fixed on one surface of the baffle plate, which is right opposite to the target material; the number of the auxiliary plasma emission devices is four, the auxiliary plasma emission devices are respectively fixed on four side surfaces of the vacuum coating cavity, and emission ports of the auxiliary plasma emission devices are opposite to the rough surface layer.
Preferably, the port of the plasma emission device is communicated with the inner cavity of the vacuum coating chamber, and the port of the plasma emission device is wound with an emission electromagnetic coil.
Preferably, the turntable is a rotatable turntable, the turntable is circular, one target is located below the turntable, and the target is circular.
Preferably, the baffle has a circular structure, and the rough surface layer is fixed to the outer surface of the baffle.
Compared with the prior art, the invention has the beneficial effects that: the process method for carrying out ion sputtering coating in the vacuum environment can effectively inhibit arc discharge on the surface of the target material, has good stability of sputtering deposition and strong practicability, and has wide market space.
Drawings
FIG. 1 is a schematic structural diagram of a vacuum coating chamber in the sputter coating process of the present invention.
In the attached figure 1: the device comprises a vacuum coating chamber-1, a plasma emission device-2, an auxiliary plasma emission device-3, an emission electromagnetic coil-4, an emission port-5, a turntable-6, a target material-7, a base surface-8 and a rough surface layer-9.
Detailed Description
The invention will be further described with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1, a process method for performing ion sputtering coating in a vacuum environment, wherein the ion sputtering coating comprises a main power supply, a main control power supply, a lifter, a vacuum coating chamber, a mechanical pump, a molecular pump, a heating temperature control power supply, a composite vacuum gauge and an ionization vacuum gauge, and is characterized in that: the ion sputtering coating comprises the following steps:
the method comprises the steps that firstly, a main power supply is turned on, main control power is started, a substrate is placed after a vacuum coating chamber is opened, and the position of the substrate and the position of a target are determined; after the substrate and the target are prepared, the elevator descends to the vacuum coating chamber for sealing;
secondly, starting the mechanical pump, pumping for 100s, then opening the composite vacuum gauge, and when the reading is 10E-1In the magnitude, starting the molecular pump, and simultaneously preheating ions, cleaning and turning on a direct current or jet current power supply and a flow display instrument, wherein the frequency of the molecular pump is 400 HZ;
thirdly, turning on a heating temperature control power supply, and when the vacuum degree reaches 5x10-4When Pa is needed, the composite vacuum gauge is closed, the ionization vacuum gauge is started, argon is introduced, the flow rate is 20L/min, the gas path valve is opened, the ion source is opened after the flowmeter is stabilized, and the acceleration is sequentially adjusted to 200V-250V, the neutralization is 10A, the anode is 90V, the cathode is 10V, and the screen is 350V; starting cleaning;
fourthly, after cleaning, according to the reverse order of ion source parameter adjustment, zeroing the parameters, closing the ion source, and placing the flowmeter in a closing gear;
fifthly, adjusting and controlling the reading of the ionization vacuum gauge to be 1Pa, adjusting a direct current or radio frequency power supply to the required power, and starting coating;
and sixthly, after the film coating is finished, closing the direct current or radio frequency power supply, closing the argon valve, the flow display instrument and the ionization vacuum gauge, and closing the main power supply.
The vacuum coating chamber 1 comprises a plasma emission device 2, an auxiliary plasma emission device 3, a turntable 6, a target 7 and a base surface 8. The plasma emission device 2 is arranged on one side of the vacuum coating chamber 1, the port of the plasma emission device 2 is communicated with the inner cavity of the vacuum coating chamber 1, and the port of the plasma emission device 2 is wound with an emission electromagnetic coil 4. By arranging the emission electromagnetic coil, high-density uniform plasma is obtained, and uniform and stable sputtering of the whole target surface is realized. The plasma emission device 2 has an emission port aligned with the turntable 6, the turntable 6 is arranged on the bottom surface of the interior of the vacuum coating chamber 1, the target 7 is arranged on the lower bottom surface of the turntable 6, the turntable 6 is a rotatable turntable, the turntable 6 is circular, one target 7 is positioned below the turntable 6, and the target 7 is circular.
The base surface 8 is fixed on the upper top surface inside the plasma emission device 2, the base surface 8 is arranged right opposite to the target 7, and one surface of the base surface 8, which is right opposite to the target 7, is fixed with an uneven rough surface layer 9; the base surface 8 is of a circular structure, and the rough surface layer 9 is fixed on the outer surface of the base surface 8. According to the base surface used in the ion sputtering coating process in the vacuum environment, the rough surface layer is additionally arranged on the base surface, redundant deposited substances are adsorbed on the surface of the base surface, the deposited substances are prevented from falling off, and the yield of the produced product is higher; can reach 98 percent.
The number of the auxiliary plasma emission devices 3 is four, the auxiliary plasma emission devices are respectively fixed on four side surfaces of the vacuum coating chamber 1, and the emission ports 5 of the auxiliary plasma emission devices 3 are opposite to the rough surface layer 9. Four auxiliary plasma emission devices increase oxygen ions O reflected and ionized in the cavity2That is, compared to the conventional ion sputtering process using only one auxiliary plasma emission device, it is possible to make the process faster and, most importantly, to ensure that the Si atoms and O atoms are mixed2Formation of SiO by combination of ionic reactions2Control is near the base surface. The auxiliary ion source emission device is arranged to respectively inject the emission ports from the periphery to be opposite to the base surface, so that sputtering reaction is generated near the base surface, and the probability of forming compounds by reaction of reaction gas on a target surface is reduced; effectively inhibit the arc discharge phenomenon on the surface of the target material.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A process method for carrying out ion sputtering coating in a vacuum environment is disclosed, wherein the ion sputtering coating comprises a main power supply, a main control power supply, a lifter, a vacuum coating chamber, a mechanical pump, a molecular pump, a heating temperature control power supply, a composite vacuum gauge and an ionization vacuum gauge, and is characterized in that: the ion sputtering coating comprises the following steps:
the method comprises the steps that firstly, a main power supply is turned on, main control power is started, a substrate is placed after a vacuum coating chamber is opened, and the position of the substrate and the position of a target are determined; after the substrate and the target are prepared, the elevator descends to the vacuum coating chamber for sealing;
secondly, starting the mechanical pump, pumping for 100s, then opening the composite vacuum gauge, and when the reading is 10E-1In the magnitude, starting the molecular pump, and simultaneously preheating ions, cleaning and turning on a direct current or jet current power supply and a flow display instrument, wherein the frequency of the molecular pump is 400 HZ;
thirdly, turning on a heating temperature control power supply,when the vacuum degree reaches 5x10-4When Pa is needed, the composite vacuum gauge is closed, the ionization vacuum gauge is started, argon is introduced, the flow rate is 20L/min, the gas path valve is opened, the ion source is opened after the flowmeter is stabilized, and the acceleration is sequentially adjusted to 200V-250V, the neutralization is 10A, the anode is 90V, the cathode is 10V, and the screen is 350V; starting cleaning;
fourthly, after cleaning, according to the reverse order of ion source parameter adjustment, zeroing the parameters, closing the ion source, and placing the flowmeter in a closing gear;
fifthly, adjusting and controlling the reading of the ionization vacuum gauge to be 1Pa, adjusting a direct current or radio frequency power supply to the required power, and starting coating;
and sixthly, after the film coating is finished, closing the direct current or radio frequency power supply, closing the argon valve, the flow display instrument and the ionization vacuum gauge, and closing the main power supply.
2. A vacuum coating chamber for use in the ion sputter coating process of claim 1, wherein: it includes plasma emitter, supplementary plasma emitter, carousel and target, plasma emitter sets up in one side of vacuum coating chamber, and the carousel is aimed at to plasma emitter's transmission mouth, the carousel sets up in the bottom surface of the inside of vacuum coating chamber, and the target sets up in the lower bottom surface of carousel, its characterized in that: the plasma emission device comprises a plasma emission device, a baffle plate and a target material, wherein the baffle plate is fixed on the upper top surface inside the plasma emission device, the baffle plate is arranged right opposite to the target material, and an uneven rough surface layer is fixed on one surface of the baffle plate, which is right opposite to the target material; the number of the auxiliary plasma emission devices is four, the auxiliary plasma emission devices are respectively fixed on four side surfaces of the vacuum coating cavity, and emission ports of the auxiliary plasma emission devices are opposite to the rough surface layer.
3. The vacuum coating chamber of claim 2, wherein: the port of the plasma emission device is communicated with the inner cavity of the vacuum coating cavity, and an emission electromagnetic coil is wound at the port of the plasma emission device.
4. The vacuum coating chamber of claim 2, wherein: the rotary table is a rotatable rotary table which is circular, one target is positioned below the rotary table, and the target is circular.
5. The vacuum coating chamber of claim 2, wherein: the baffle is circular structure, and the matte layer is fixed in the surface of baffle.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810722529.2A CN110670033A (en) | 2018-07-03 | 2018-07-03 | Process method for ion sputtering coating in vacuum environment |
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| CN201810722529.2A CN110670033A (en) | 2018-07-03 | 2018-07-03 | Process method for ion sputtering coating in vacuum environment |
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| CN110670033A true CN110670033A (en) | 2020-01-10 |
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