CN201374309Y - Device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment - Google Patents
Device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment Download PDFInfo
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- CN201374309Y CN201374309Y CN200920095215U CN200920095215U CN201374309Y CN 201374309 Y CN201374309 Y CN 201374309Y CN 200920095215 U CN200920095215 U CN 200920095215U CN 200920095215 U CN200920095215 U CN 200920095215U CN 201374309 Y CN201374309 Y CN 201374309Y
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Abstract
The utility model relates to a device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment, comprising a camera, a scanning electron microscope objective, a planar reflecting mirror, a target integrating ion gun and the like. A vacuum chamber is internally provided with an aeration flange interface, an energization flange interface and an observation window; the target integrating ion gun is arranged in the vacuum chamber; target material is fixed at the front end of the ion gun by a bracket; the planar reflecting mirror is arranged above the side of a sample holder; a high-pressure lead is connected between the target integrating ion gun and an energization flange; argon gas is sent into the target integrating ion gun by the aeration flange interface; the argon gas is ionized and accelerated by high pressure, or further converged by a magnetic lens in the target integrating ion gun so as to form ion beam to bombard the target material; the sputtered target material atoms knock the surface of a sample and form a coating layer; or the height of a sample platform is adjusted so as to lead the ion beam to directly etch the sample surface behind a baffle. The addition of the device does not affect the functions of the electron microscope, the surface of the ion sputtering coating layer is uniform, compact and clean, and the feature observation of a nano structure surface is met.
Description
Technical field
The utility model belongs to material microstructure field, is specifically related in scanning electron microscopy or other vacuum instrument and equipment sample surfaces be carried out the device of ion sputtering plated film and etching.
Background technology
Scanning electron microscopy is a widely used analytical and testing instrument in the scientific researches such as material, chemical industry, environment, life, and a lot of samples will pass through ion sputtering plated film and etching processing before test.Such as for sample non-conductive or that under high enlargement ratio, observe,, prepare conducting film to sample surfaces, as golden film for overcoming the signal to noise ratio of charged interference, raising image.But some film preparation instrument can not be processed the conducting film of excess of export even compact, has influenced some feature, as the observing effect of nanostructure.Sometimes for the cross section structure of observing coating, need pair cross-section to carry out fine ion etching.The cross section polishing instrument that well behaved ion sputtering plated film etching instrument and special preparation cross-sectional sample are also arranged on the market for this reason.
Use outside the sample preparation appliance requires fund input of above-mentioned special use, and physicochemical change can take place in the sample for preparing in the process that ESEM or other analytical instrument transport, such as absorption, oxidation and pollution etc., can destroy the real topography of sample surfaces like this.Scanning electron microscopy has perfect vacuum system, than the function that is easier to develop ion sputtering and etching.Sample preparation is respond well, overcomes such as oxidation simultaneously, pollutes the destruction to the sample real topography, realizes accurate home position observation experiment.Utilize existing vacuum instrument and equipment, can develop ion sputtering plated film and etching function equally, save investment this kind equipment as the vacuum vapor plating instrument.
Summary of the invention
The purpose of this utility model is, in the original vacuum system of ESEM, one cover ion sputtering plated film and etching device is provided, specimen is more suitable in the observation in nanostructure and cross section, and the utility model do not influence any function of scanning electron microscopy body.
Below in conjunction with accompanying drawing know-why of the present utility model is described.Ion sputtering plated film and etching device in ESEM or the vacuum equipment have: vacuum chamber, camera, ESEM object lens, specimen holder, plane mirror etc., camera is loaded on left side wall in the vacuum chamber, and objective lens of the scanning electron microscope, is positioned at the vacuum chamber top.Its technology and structural principle be, at the vacuum chamber (or in other vacuum instrument and equipment) of ESEM the integrated ion gun of target, baffle plate assembly, target, surveillance etc. is installed, and high voltage source and control cabinet are located at the sample room or vacuum chamber outer (as figure).Be provided with ventilation flange-interface, energising flange-interface and watch window successively at vacuum chamber sidewall backup flange interface, the integrated ion gun of target places in the vacuum chamber, target is fixed in the front end of the integrated ion gun of target by support, plane mirror places the side top of specimen holder, and sample places above the specimen holder.The outside at sample is provided with baffle plate; The integrated ion gun of target has high-voltage conducting wires to be connected with energising between the flange.
External pressure is that the argon gas of 0.1-0.15MPa is delivered into the integrated ion gun of target (as the figure right side arrow) by the ventilation flange-interface, argon gas in the integrated ion gun of target inside through 1-10kV high pressure ionization, acceleration, or converge formation ion beam bombardment target through magnetic lens again, the surface of the target atom that sputters bump sample also forms coating.
The diameter of ion beam is 350-2500um, and the energy of this ion beam is 1-10keV.
Adjust the angle of rotational plane speculum, can monitor the state and the sample position of ion beam by camera or watch window.
Also can adjust the height of sample stage, make the sample surfaces of the direct etching baffle plate of the ion beam back of 1-10keV.
The utility model can be realized the function of ion sputtering plated film and etching, and it is installed in scanning electron microscopy or other vacuum instrument and equipment, can carry out morphology observation and various analysis immediately after the sample preparation.
The beneficial effects of the utility model are, by scanning electron microscopy or other vacuum equipment are developed and utilized, make its function, the coating surface even compact with ion sputtering plated film and etching, coating surface and etching surface are more clean, satisfy the morphology observation of nanostructured surface.The utility model is installed in the sample room of ESEM, can realize the accurate in-situ preparing and the observation of sample surfaces, sample after the preparation can carry out morphology observation and other analysis immediately, overcome transmission simultaneously and polluted, and the adding of this device does not produce any influence to the function that Electronic Speculum had.
Description of drawings
Accompanying drawing is the utility model vertical section structure principle sketch.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.Ion sputtering plated film and etching device in ESEM or the vacuum equipment have, vacuum chamber 1, camera 2, ESEM object lens 3, specimen holder 4, plane mirror 5, ventilation flange-interface 6, energising flange-interface 7 and watch window 8 etc.Specifically be set to: be provided with ventilation flange-interface 6, energising flange-interface 7 and watch window 8 at vacuum chamber 1 sidewall backup flange interface 13 places.Plane mirror 5 and specimen holder 4 all can rotate.The integrated ion gun 9 of target places in the vacuum chamber, and target 10 is fixed in the front end of the integrated ion gun 9 of target by support.The outside of sample 11 (with respect to sample, in vertical rotation axle one side away from specimen holder 4) is provided with baffle plate 12.Plane mirror 5 places the side top of specimen holder 4, and sample 11 places above the specimen holder 4.The integrated ion gun 9 of target has high-voltage conducting wires to be connected with energising between the flange 7.External pressure is that the argon gas of 0.1MPa is delivered into the integrated ion gun 9 of target by ventilation flange-interface 6, and argon gas through high pressure ionization, acceleration, converges the formation ion beam through magnetic lens again in the integrated ion gun 9 of target.Magnetic lens is a permanent-magnetic lens to present embodiment.Ion beam is with the energy bombardment target 10 of 10keV, and the surface of the target atom that sputters bump sample 11 also forms coating.High pressure ionization, acceleration pool the ion beam that diameter is 1500um through permanent-magnetic lens again.Switch camera 2 or all can observe concrete operating state by rotational plane speculum 5 by observation window 8.Add baffle plate 12 in sample 11 fronts during the etching sample, its effect is that the part ion bundle is lived in shielding, makes the zone that is etched of sample 11 smooth, and does not produce edge chamfer.Add protective cover in target 10 fronts during the etching sample, can avoid the target reactive power consumption, reduce the pollution of sputter cutting.Because specimen holder 4 can rotate, so the sample 11 of present embodiment and baffle plate 12 have been placed two groups (shown in accompanying drawings).
Claims (5)
1. ion sputtering plated film and the etching device in ESEM or the vacuum equipment, has vacuum chamber (1), camera (2), ESEM object lens (3), specimen holder (4), plane mirror (5), it is characterized in that locating to be provided with successively ventilation flange-interface (6) at vacuum chamber (1) sidewall backup flange interface (13), energising flange-interface (7) and watch window (8), the integrated ion gun of target (9) places in the vacuum chamber, target (10) is fixed in the front end of the integrated ion gun of target (9) by support, plane mirror (5) places the side top of specimen holder (4), sample (11) places above the specimen holder (4), be provided with baffle plate (12) in the outside of sample (11), there is high-voltage conducting wires to be connected between the integrated ion gun of target (9) and energising flange (7), pressure is that the argon gas of 0.1-0.15MPa is delivered into the integrated ion gun of target (9) by ventilation flange-interface (6), argon gas is inner through the 1-10kV high pressure ionization at the integrated ion gun of target (9), quicken, or converge formation ion beam bombardment target (10) through magnetic lens again, the surface of the target atom that sputters bump sample (11) also forms coating.
2. according to ion sputtering plated film and etching device in described ESEM of claim 1 or the vacuum equipment, it is characterized in that describedly through high pressure ionization, acceleration, or converge through magnetic lens again that to form diameter be the ion beam of 350-2500um.
3. according to ion sputtering plated film and etching device in claim 1 or 2 described ESEMs or the vacuum equipment, it is characterized in that described through high pressure ionization, acceleration, or converge the ion beam of formation again through magnetic lens, with the sample (11) of the described baffle plate of energy etching (12) back of 1-10keV.
4. according to ion sputtering plated film and etching device in described ESEM of claim 1 or the vacuum equipment, it is characterized in that described plane mirror (5) and specimen holder (4) all can rotate.
5. according to ion sputtering plated film and etching device in described ESEM of claim 1 or the vacuum equipment, it is characterized in that described magnetic lens is permanent-magnetic lens or electromagnetic lens.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200920095215U CN201374309Y (en) | 2009-01-05 | 2009-01-05 | Device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment |
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CN200920095215U CN201374309Y (en) | 2009-01-05 | 2009-01-05 | Device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment |
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CN201374309Y true CN201374309Y (en) | 2009-12-30 |
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CN200920095215U Expired - Fee Related CN201374309Y (en) | 2009-01-05 | 2009-01-05 | Device for scanning electron microscope or ion sputtering film coating and etching in vacuum equipment |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102495237A (en) * | 2011-12-14 | 2012-06-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ processing test device for material interface |
CN103313950A (en) * | 2010-10-15 | 2013-09-18 | 葛迪恩实业公司 | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
CN103545248A (en) * | 2012-07-11 | 2014-01-29 | 台湾积体电路制造股份有限公司 | Methods of manufacturing semiconductor devices |
CN103797351A (en) * | 2011-09-12 | 2014-05-14 | Fei公司 | Glancing angle mill |
CN103805956A (en) * | 2014-02-27 | 2014-05-21 | 苏州大学 | In-situ morphology and optical performance monitoring evaporation source and vacuum deposition equipment |
CN104046946A (en) * | 2014-07-04 | 2014-09-17 | 苏州普京真空技术有限公司 | Vacuum ionization film plating machine |
CN107254672A (en) * | 2017-05-27 | 2017-10-17 | 深圳先进技术研究院 | The detecting system of vacuum coating equipment |
EP3249676A1 (en) * | 2016-05-27 | 2017-11-29 | FEI Company | Charged-particle microscope with in situ deposition functionality |
CN110712094A (en) * | 2019-09-06 | 2020-01-21 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
CN112397365A (en) * | 2019-08-14 | 2021-02-23 | 中国科学院上海硅酸盐研究所 | Sample table suitable for TIC3X three-ion-beam cutting instrument |
CN114302979A (en) * | 2019-08-19 | 2022-04-08 | 查目科技股份有限公司 | Processing apparatus and method |
CN114302979B (en) * | 2019-08-19 | 2024-04-05 | 查目科技股份有限公司 | Processing apparatus and method |
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2009
- 2009-01-05 CN CN200920095215U patent/CN201374309Y/en not_active Expired - Fee Related
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103313950A (en) * | 2010-10-15 | 2013-09-18 | 葛迪恩实业公司 | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
CN103313950B (en) * | 2010-10-15 | 2015-09-30 | 葛迪恩实业公司 | The method of process soda lime silica glass baseplate surface, surface-treated glass substrate and use its device |
CN103797351A (en) * | 2011-09-12 | 2014-05-14 | Fei公司 | Glancing angle mill |
US9941096B2 (en) | 2011-09-12 | 2018-04-10 | Fei Company | Glancing angle mill |
CN102495237A (en) * | 2011-12-14 | 2012-06-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ processing test device for material interface |
CN102495237B (en) * | 2011-12-14 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ processing test device for material interface |
CN103545248A (en) * | 2012-07-11 | 2014-01-29 | 台湾积体电路制造股份有限公司 | Methods of manufacturing semiconductor devices |
CN103805956A (en) * | 2014-02-27 | 2014-05-21 | 苏州大学 | In-situ morphology and optical performance monitoring evaporation source and vacuum deposition equipment |
CN103805956B (en) * | 2014-02-27 | 2015-10-21 | 苏州大学 | A kind of original position pattern and optical performance monitor evaporation source and vacuum sediment equipment |
CN104046946A (en) * | 2014-07-04 | 2014-09-17 | 苏州普京真空技术有限公司 | Vacuum ionization film plating machine |
EP3249676A1 (en) * | 2016-05-27 | 2017-11-29 | FEI Company | Charged-particle microscope with in situ deposition functionality |
US10475629B2 (en) | 2016-05-27 | 2019-11-12 | Fei Company | Charged-particle microscope with in situ deposition functionality |
CN107254672A (en) * | 2017-05-27 | 2017-10-17 | 深圳先进技术研究院 | The detecting system of vacuum coating equipment |
CN107254672B (en) * | 2017-05-27 | 2019-05-21 | 深圳先进技术研究院 | The detection system of vacuum coating equipment |
CN112397365A (en) * | 2019-08-14 | 2021-02-23 | 中国科学院上海硅酸盐研究所 | Sample table suitable for TIC3X three-ion-beam cutting instrument |
CN112397365B (en) * | 2019-08-14 | 2022-06-14 | 中国科学院上海硅酸盐研究所 | Sample table suitable for TIC3X three-ion-beam cutting instrument |
CN114302979A (en) * | 2019-08-19 | 2022-04-08 | 查目科技股份有限公司 | Processing apparatus and method |
CN114302979B (en) * | 2019-08-19 | 2024-04-05 | 查目科技股份有限公司 | Processing apparatus and method |
CN110712094A (en) * | 2019-09-06 | 2020-01-21 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
CN110712094B (en) * | 2019-09-06 | 2021-07-23 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091230 Termination date: 20140105 |