CN208791745U

CN208791745U - Equipment for coated substrates

Info

Publication number: CN208791745U
Application number: CN201490001611.1U
Authority: CN
Inventors: 丹尼尔·塞韦林; 马库斯·本德; 马库斯·哈尼卡; 拉尔夫·林登贝格
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2014-12-16
Filing date: 2014-12-16
Publication date: 2019-04-26
Anticipated expiration: 2024-12-16
Also published as: WO2016095976A1; KR20170096155A

Abstract

According to embodiment, the equipment of the coated substrates in being vacuum-treated chamber is provided.Equipment includes to be vacuum-treated chamber.The vacuum processing chamber includes sputtering component.The sputtering component includes sputtering source.The sputtering component can be relative to the mode movement of the translational motion for being vacuum-treated chamber.Equipment includes that power source is used to apply power to the sputtering source.Equipment further includes controller, for the current location according to the sputtering component or the sputtering source in the vacuum processing chamber, to control from least one of following the description: the electric current for being applied to the power of the sputtering source by the power supply, the voltage of the sputtering source being applied to by the power supply and is applied to the sputtering source by the power supply.

Description

Equipment for coated substrates

Technical field

This disclosure relates to a kind of equipment for the coated substrates in being vacuum-treated chamber, and in particular to a kind of use In the equipment for forming at least one layer of sputter material on substrate.Particularly, this equipment includes sputtering component, and sputtering component, which has, to be used In at least one sputtering source of coated substrates.More particularly, at least some designs of present disclosure are related to magnetron sputtering, especially It is reactive sputtering or inert sputter.The target of at least one sputtering source may be, for example, rotatable cylindric target.

Background technique

In many technical fields, being formed on substrate, there is the layer of high uniformity (to be covered on the surface of extension Uniform thickness) it is an important project.For example, the thickness uniformity is reliable in the field of thin film transistor (TFT) (TFTs) Manufacture the key point of display metal connection.In addition, uniform layer typically favors the reproducibility of manufacture.

One kind cambial method on substrate is sputtering, sputter in different manufacturing fields have become it is a kind of valuable Method, such as in the manufacture of TFTs.During sputtering, atom passes through particle (such as inertia or reaction gas with energy The energetic ions of body) bombardment hit from target material.Therefore, the atom hit can be deposited on substrate, be splashed so as to be formed Penetrate the layer of material.

However, by sputtering forming layer high uniformity may be destroyed due to the geometry of such as target and/or substrate Demand.Especially since the irregular spatial distribution of sputter material, it may be difficult to realize sputter material on large-scale substrate Conforming layer.The supply of a variety of targets on substrate can improve the uniformity of layer.Alternatively, certain external positions and rise With the magnet of the angular speed rotary magnetron sputtering cathode of rule between beginning position (zero-position).However, especially for Some layer uniformities for the higher application of layer uniformity requirement, realized according to this may not enough.

Therefore, it is necessary to further systems, to promote the sputter material layer of high uniformity.

Utility model content

According to one embodiment, a kind of equipment for coated substrates is proposed.Equipment includes being vacuum-treated chamber.Vacuum Processing chamber housing includes sputtering component.Sputtering component includes sputtering source.Component is sputtered relative to the translation fortune for being vacuum-treated chamber It is dynamic to be moveable.Equipment includes power supply, to supply power to sputtering source.Equipment further comprises controller, controller warp It is configured to the current location according to the sputtering component or sputtering source being vacuum-treated in chamber, to control in following the description at least One: the power of sputtering source being applied to by power supply, the voltage of sputtering source is applied to by power supply and sputtering source is applied to by power supply Electric current.

In a device, the sputtering source includes rotatable target.

In a device, the translational motion is parallel to the substrate-guided system.

Equipment includes the substrate-guided system being set in the vacuum processing chamber, and the substrate-guided system is set For supporting the substrate during coating, and for the substrate to be moved into the vacuum processing chamber and removes the vacuum Processing chamber housing, wherein the translational motion is parallel to the substrate-guided system.

Equipment includes being coupled to the drive system of the sputtering component, wherein the drive system is configured for realizing institute The translational motion for stating sputtering component, wherein the controller is coupled to the drive system, to control the sputtering group The translational motion of part.

In a device, wherein the sputtering source is constructed, so that the sputtering source does not face the base in first position Plate, and wherein the sputtering source is constructed, so that the sputtering source faces the substrate in the second position.

In a device, the sputtering source is constructed, so that the sputtering source does not face the substrate in first position, and And wherein the sputtering source is constructed, so that the sputtering source faces the substrate in the second position.

In a device, the controller is configured for continuing to adjust at least one of at least one described power parameter Power parameter.

In a device, the controller includes memory, and the memory includes power configuration, the power configuration conduct The function of the position of the sputtering source in the vacuum processing chamber, wherein the controller is constructed to read the power Configuration determines the function for being applied to the sputtering source with the position according to the sputtering source in the vacuum processing chamber Rate.

In a device, the sputtering component includes N number of other sputtering source, and wherein N is in the range of 1 to 10, and wherein N number of other sputtering source is identical with the type of the sputtering source, and wherein the controller is configured for according to described in Sputter the current location of component or the sputtering source or a sputtering source in N number of other sputtering source, control At least one power parameter selected in parameters described below: the sputtering source is applied to by the power supply and described N number of other is splashed It penetrates the general power in source, the sputtering source and total power profile in N number of other sputtering source, be applied to by the power supply The voltage of the sputtering source and N number of other sputtering source and the sputtering source and described N number of is applied to by the power supply The electric current of other sputtering source.

Equipment further includes at least one of following elements:

Shielding part, the shielding part are set to the substrate-guided system, to shielded during coating the substrate or Substrate carrier；And

Chamber wall；

Wherein the controller be configured to according to the sputtering component or the sputtering source whether towards the substrate, Or towards the shielding part or towards the chamber wall, to change the power for being applied to the sputtering source.

Equipment further includes at least one of following elements:

Chamber wall；

Equipment further includes at least one of following elements:

Chamber wall；

It can be with further advantage, feature, aspect and the details in conjunction with embodiment described herein via appended subordinate Claim, description and attached drawing, it will have and more preferably understand.

Detailed description of the invention

For those of ordinary skill in the art, complete and advantageous disclosure is more at large illustrated In the rest part of specification, including referring to appended attached drawing, in which:

Fig. 1 is painted the schematic diagram of the equipment for coated substrates according to embodiment described herein；

Fig. 2 is painted the embodiment of the equipment for coated substrates according to embodiment described herein；

Fig. 3 is painted the working principle of the embodiment of Fig. 2 with unrestricted example；

Fig. 4 to Fig. 5 is painted the embodiment other for the equipment of coated substrates；

Fig. 6 is painted the block schematic diagram of the method for coated substrates.

Specific embodiment

Various exemplary implementations will be described in detail now, one or more of these examples are illustrated in each In attached drawing.It provides each example to be served only for explaining, and is not intended to limit.For example, a part as an embodiment And the feature for being shown or describing, it can be used for other embodiment or in conjunction with other embodiments, it is other to generate Embodiment.Present disclosure is intended to comprising such modification and variation.

In the following description content of attached drawing, identical reference label indicates identical element.In general, only description Other embodiment does not exist together.Structure shown in the drawings is not necessarily drawn according to actual ratio, and is contributed to preferably Understand embodiment.

Fig. 1 shows the top view for the equipment 300 of coated substrates 10 in the diagram.This equipment 300 includes vacuum Processing chamber housing 102.Substrate can especially be deposited by layer to be static during the coating process being vacuum-treated in chamber 102 During on to substrate 10.Equipment 300 includes sputtering component 310, and sputtering component 310 includes one or more sputtering sources, example Such as sputtering the sputtering source of rotatable target.Equipment 300 includes power supply 360.In Fig. 1, power supply 360 is via electric connection line 362 are connected to sputtering component 310.

Sputter material is sputtered on substrate 10 in Fig. 1 with position shown in solid by sputtering component 310, and then along The front surface of substrate is mobile in a manner of translational motion as the dotted line arrows, and wherein dashed rectangle is indicated in later point On sputtering component 310.The front surface of substrate receives sputter material, and when sputtering component is moved along front surface, sputtering is held It is continuous to carry out.Sputter material layer or in the case where reactive sputtering, reactant including sputter material and from processing gas Material layer is formed in the front surface of substrate.

Due to sputtering the translational motion of component 310, the coating with excellent homogeneity will be deposited in sputtering technology In the front surface of substrate 10.Sputtering component 310 translational motion mean sputter component near chamber geometry, and/ Or the object (such as substrate, rather than the element of the vacuum processing chamber of such as chamber wall or shielding part) that sputtering component faces can It can change.The environment of change can have an impact to by sputtering technology performed by sputtering component.

In embodiment shown in FIG. 1, equipment 300 further comprises controller 390.Controller 390 is received about sputtering The current location information of component 310, position especially with regard to sputtering source or sputter component 310 multiple sputtering sources position It sets, as shown in figure 1 as shown in the block arrow from sputtering 310 pointing controller 390 of component.For example, about sputtering component 310 or The location information that (multiple) sputtering source of sputtering component 310 is current can be continuously measured or measure at a certain time interval, example Such as by sensor, and result is sent to controller 390.Alternatively, the translation fortune of the controllable sputtering component 310 of controller 390 It is dynamic, and the current position of sputtering component 310 therefore can be learnt from data used in control translational motion.Controller 390 into One step can go out (multiple) position of (multiple) sputtering source from the reference position derivation of sputtering component 310, especially when (multiple) are splashed Penetrate source to each other with fixed spatial relationship arrangement when.

Controller 390 is constructed to control power supply 360, is directed toward the block arrow institute of power supply 360 from controller 390 as shown in figure 1 Show.Particularly, controller it is constructed to according to sputtering component 310 or sputter component 310 at least one sputtering source it is current Position, to control the power for being applied at least one sputtering source by power supply 360.

For example, if sputtering component 310 is located in Fig. 1 so that in position shown in solid, sputtering component 310 owns Or some sputtering sources can be located in Fig. 1 shown in dotted line towards chamber element, such as wall or shielding part when sputtering component 310 Position in when, sputter component 310 sputtering source towards the front side of substrate 10.It is illustratively assumed that reactive sputtering is performed, place Process gases can have different reactions, and rate (different topically effective pumping that can be different in two positions shown in (local effective pumping)) it is absorbed by chamber element and substrate.Therefore, controller can for example in one location (such as in first position shown in solid), such as one is provided compared to the higher power of other positions to sputtering component 310 Sputtering source.The operating point of sputtering technology and plasma impedance can be therefore stable and be kept fixed, to generate constant target Material corrosion rate and constant sputter material deposition velocity.

By control power parameter (such as to the numerical value of the power of one or more sputtering sources of sputtering component and/or Distribution), it can be achieved that substrates coatings more evenly.

Fig. 2 is painted an embodiment of the equipment 400 for coated substrates 10.Substrate 10 is attached to substrate carrier 12. Substrate carrier 12 is guided by substrate-guided system 270.Substrate-guided system 270 can be for example including supporting substrate carrier 12 from below Multiple rollers, and guide from top the magnetic track of substrate carrier in a non-contact manner.Substrate-guided system shown in Fig. 2 270 are configured to that substrate carrier 12 and substrate 10 is allowed (not to show by being vacuum-treated corresponding gate in 202 side wall of chamber It is transferred into and leaves out) the vacuum processing chamber 202 of equipment 400.

Equipment 400 further comprises sputtering component 210.Sputtering component 210 includes the first sputtering source 211 and the second sputtering source 221, the first sputtering source 211 has the first rotatable target 212 and the first magnetron 214, and the second sputtering source 221 can with second Rotary target material 222 and the second magnetron 224.Sputtering component is mounted on bracket (carriage) 230.Equipment 400 includes power Compartment system 450.Power supply 460 is connected to power distribution system 450 via line 462 is electrically connected, and is especially connected to power company Connect device 452.Power connector 452 is connected to the first sputtering source 211 via line 453 is electrically connected, and via electric connection line 455 It is connected to the second sputtering source 221.

The position current according to the first sputtering source 211 and the second sputtering source 221 of controller 490, control are applied to first and splash The power in source 211 is penetrated, and controls the power for being applied to the second sputtering source 221.For example, with branch shown in solid in Fig. 2 In the position of frame 230 and the position of the first sputtering source 211 and the second sputtering source 221, controller 490 is controllable to be applied to sputtering source Power be higher than Fig. 2 in the power of position shown in dotted line.Controller may include that the power being stored in memory segments is matched It sets, and (access) power configuration can be read according to the position of sputtering component 210 or sputtering source, sputtering source is applied to control Power.Power distribution system 450 is mountable on bracket 230.

Equipment 400 includes drive system 240, and drive system 240 has driver 245, such as linear motor.Drive system 240 may include track, such as multiple rail bars (rail), bracket 230 can orbit.Bracket 230 and it is mounted on bracket 230 The sputtering component 210 and gas inlet component 250 of top are driven by drive system 240, are drawn with realizing along and being parallel to substrate The translational motion of guiding systems 270.First shielding part 282 and secondary shielding part 284 are arranged in substrate-guided system 270 with driving Between system 240, wherein there are gap between the first shielding part 282 and secondary shielding part 284, this gap allows sputter material can In front surface by reaching substrate 10 between shielding part.

When sputter material is sputtered out the first rotatable target 212 and the second rotatable target 222, bracket 230 is at least It is moved along the length of substrate, and is especially also moved to multiple positions other than substrate 10.In Fig. 2, sputtering component 210 is the Be shown in solid in one position, at this position, the first sputtering source 211 and the second sputtering source 221 towards substrate processing area it Outer shielding part 282.Dotted arrow in Fig. 2 indicates 230 quilt of bracket with sputtering component 210 and gas inlet component 250 Mobile, the second position for the element installed above bracket 230 and bracket 230 is shown in dotted line.When in the second position, the One sputtering source 211 and the second sputtering source 221 are towards the substrate 10 in substrate processing area.

Controller 490 can control bracket 230 and sputtering component 210 and power distribution system 450 (if power distribution system System 450 is mounted on bracket 230) translational motion.In particular, controller 490 controls drive system 240, especially driver 245, with the translational motion for the element realizing bracket 230 and being mounted on above bracket 230, such as connected controller 490 in Fig. 2 and driving Shown in the line of dynamic device 245.Due to controller 490 control translational motion, controller 490 grasp (possess) about bracket 230, The first sputtering source 211 with the first rotatable target 212 and the second sputtering source 221 with the second rotatable target 222 are worked as The information of front position.

Based on the location information in relation to sputtering component 210 and/or the element for sputtering component 210, controller 490 controls function Rate parameter.490 controllable power 460 of controller, as shown in the line for connecting power supply 460 and controller 490 in Fig. 2.Wherein, defeated Sending can be by controller 490 to the general power for sputtering component 210 and/or the power distribution for being delivered to an other sputtering source 211 and 221 It is controlled.

The example that Fig. 3 is controlled during being schematically painted sputtering technology by the operation of controller 490.When sputtering component 210 is (special Be not the first sputtering source 211 and the second sputtering source 221) when being carrying out sputtering from the left side of Fig. 3 be moved to the right when, splash Penetrating component 210 will move into treatment region P from the region except treatment region P, sputter component 210 at this time towards substrate 10, and It is moved again in the region except treatment region P, sputters component 210 at this time towards the other elements for being vacuum-treated chamber, such as Shielding part 282 and 284 or chamber wall shown in Fig. 3 or other similar components.In Fig. 2 and Fig. 3, treatment region P is included in In gap between shielding part 282 and 284.

In example shown in Fig. 3, position x of the controller 490 based on sputtering component 210, it is defeated that adjustment passes through connecting line 462 It send to the general power P of power distribution system 450_t, and the distribution according to the position of sputtering source adjustment power, i.e., via electric connection The portion that line 453 is applied to the first sputtering source 211 and is applied to the general power of the second sputtering source 221 via line 455 is electrically connected Point.For example, general power P_tIt can be higher, not any at this time sputtering source 211,221 faces in the first outside area E1 To substrate 10；General power P_tIt may be reduced in First Transition area T1, the element for sputtering component 210 at this time initially enters place Manage area P；General power P_tIt can be remained unchanged in central area C, all these elements are (shown in dotted line in Fig. 3) at this time is located at place It manages in area P and towards substrate 10；And general power P_tIt may will increase in the second transition region T2, sputter the member of component 210 at this time Part initially moves off treatment region P；General power P_tCan be returned in the second outside area E2 with identical numerical value in the first outside area E1, There is no any sputtering source 211,221 towards substrate in the second outside area E2 at this time.

In First Transition area T1 and the second transition region T2, the distribution of 490 adjustable power of controller.For example, it controls Device 490 processed can control power distribution system 450, make in Fig. 3 with the position of bracket 230 shown in solid and sputtering component 210 In, it is less than via the power that electric connection line 455 is applied to the second sputtering source 221 and is applied to first via electric connection line 453 The power of sputtering source 211.When the bracket 230 with the sputtering component 210 for being mounted on 230 top of bracket moves further into Fig. 3 Right when, once the first sputtering source 211 enter treatment region P, controller 490 can then with reduce via be electrically connected line 453 Part general power mode, adjust transitional region T1 in general power distribution.It, can be correspondingly with phase in transitional region T2 It is same to sequentially increase part general power.

Controller 490 may include memory segments, and memory segments store the power configuration as shown in exemplary in Fig. 3. It is vacuum-treated chamber when bracket 230 is passed through with translational motion movement, and when sputtering component 210 is when being sputtered, controller can Power parameter is adjusted by the numerical value obtained from power configuration.

The control shown in Fig. 3 executed by controller 490, which is only for example, to be used, and but should not be understood as limiting.In particular, power Configuration can be increasingly complex, and including about general power and/or about element (such as the first sputtering source based on sputtering component And/or second sputtering source) current position total power profile control information.In addition, this control may depend on chamber geometry The other design of shape, for example, chamber wall or be vacuum-treated chamber other elements shape and near region (proximity), And/or the position of one or more vacuum outlets, by these vacuum outlets, one or more vacuum pump depletion vacuum chambers Chamber inner space.The corresponding control information that may be stored in one or more power configurations can be such that controller is entirely splashing Penetrating in technique keeps the operating point of sputtering technology and plasma impedance constant.Controller separately can change function in pre-sputtering technique Rate parameter or other parameters, wherein pre-sputtering technique occurs before sputtering technology.The control of pre-sputtering technique can with position without It closes, and pre-sputtering can carry out in a fixed position, such as in outside area E1.

Keep operating point and the plasma impedance of sputtering technology constant for improving the equal of the coating sputtered on substrate Even property.How mobile (multiple) sputtering source and control power are applied to the combination of (multiple) sputtering source, are considered to be and produce ten Divide the result of uniform coating.In addition, compared with the static array for the sputtering source being vacuum-treated in chamber, (multiple) sputtering source Movement is able to use small number of sputtering source.This may be for the target material being sputtered on substrate especially have it is excellent Gesture, because target material is expensive.The case where using such as reactive sputtering of reaction gas (such as oxygen and nitrogen) Under, stable operating point has positive influence to the stechiometry of grown layer.

The embodiment of present disclosure promotes the formation of the layer on substrate, and layer has high quality.Particularly, on substrate The thickness of the layer deposited can be high uniformity on entire substrate.In addition, promoting the high homogenieity of layer (homogeneity) (for example, being characteristically, for example, structure, resistivity and/or the ply stress for growing crystal).Citing For, the embodiment of present disclosure is advantageously possible for manufacturing in (such as manufacture for TFT-LCD display) in TFTs Metalization layer is formed, because wherein, signal delay depends on the thickness of layer, therefore the heterogeneity of thickness may cause picture element It is motivated under slightly different times.In addition, the embodiment of present disclosure is advantageously possible for being formed in follow-up phase quilt The layer of etching, because the uniformity of thickness degree promotes to reach identical result in the different location of the layer of formation.

Fig. 4 is painted the other embodiment of the equipment 100 for coated substrates 10 with top view.Equipment 100 includes true Empty processing chamber housing 102.Substrate can especially sink by layer to be static during the coating process being vacuum-treated in chamber 102 During on product to substrate 10.Equipment 100 includes sputtering component 110, and sputtering component 110 includes one or more sputtering sources, example Such as sputtering the sputtering source of rotatable target.Equipment 100 and/or sputtering component 110 can have with herein in reference to Fig. 1,2 and 3 equipment and sputtering the same or similar property of component.

Equipment 100 includes gas inlet component 150.In Fig. 1, gas inlet component 150 include gas access 154 and Connector 152, connector 152 are used to gas inlet component 150 being connected to processing gas source (not shown).Gas inlet component 150 may include other gas access and/or other connector.Processing gas is directed into very by gas inlet component 150 It in empty processing chamber housing 102, and can be reaction gas, to be used for reactive sputtering, or can be inert gas, to be used for inert sputter. When sputter material is sputtered on substrate from (multiple) sputtering source, sputtering component 110 is moved along substrate, such as dotted arrow institute Instruction.Gas inlet component 150 and connector 152 can be moved together with sputtering component 110.

Equipment 100 may include controller 190, controller 190 can have referring to Fig.1,2 and 3 described in controller it is any Property.Controller 190 is constructed to control processing gas parameter, for example, for example by controlling one or more valves (not Show), to control the flow for entering to the processing gas being vacuum-treated in chamber 102 by gas inlet component 150.In particular, Controller 190 can adjust the flow of processing gas as needed and according to the current position of sputtering component 110, to keep sputtering The fixed operating point of technique.Alternatively or additionally, controller can adjust the ingredient of processing gas (for example, by from processing gas Source provides different admixture of gas) and/or adjustment processing gas distribution (for example, by via specific gas entrance without It is that more processing gas are imported by other gas access).Wherein, in addition to control as described herein power parameter it Outside, processing gas parameter can be controlled by controller 190.By control processing gas parameter (such as flow, ingredient and/or point Cloth), it can be achieved that substrates coatings more evenly.For reactive sputtering, since the operating point of sputtering technology remains unchanged, chemistry meter Amount method can be improved.

In embodiment shown in Fig. 5, the equipment 200 for coated substrates 10 includes processing gas source 260.Processing Gas source 260 may include one or more tanks (tank) and branch pipe, tank have for example argon gas, xenon, Krypton, neon, oxygen, The gas of nitrogen, hydrogen and vapor, branch pipe is to mix these gases, to form processing gas.Equipment 200 includes gas Intake assembly 250.Gas inlet component 250 includes connector 252, and connector 252 is connected with connecting line 262, and is connected to place Process gases source 260.Gas inlet component 250 includes first gas spray gun 254, second gas spray gun 256 and third gas spray gun 258, first gas spray gun 254 is connected to connector 252 by the first connecting line, and second gas spray gun 256 passes through the second connection Line is connected to connector 252, and third gas spray gun 258 is connected to connector 252 by third connecting line.First sputtering source 211 It is arranged between first gas spray gun 254 and second gas spray gun 256, and the second sputtering source 221 is arranged in second gas spray gun Between 256 and third gas spray gun 258.Gas inlet component 250 is mounted on bracket 230.

Equipment 200 includes vacuum pump system 265, and vacuum pump system 265 may include one or more vacuum pumps.In Fig. 5, One vacuum pump connecting line 267 is shown, vacuum pump connecting line 267 connects vacuum pump system 265 to gas vent 204, and gas goes out Mouth 204 is arranged in the antetheca for being vacuum-treated chamber 202.Equipment 200 may include more than one vacuum pump connecting line and be more than One gas vent, such as the gas vent with bonding in vacuum line as many.Each vacuum pump connecting line can be connected to one Vacuum pump, alternatively, multiple vacuum pump connecting lines can be connected to a vacuum pump.

Equipment 200 includes controller 290, and the institute of the executable controller referring to described in Fig. 2 and Fig. 3 of controller 290 is active Can, the control of control and drive system 240 and driver 245 including power parameter, to realize bracket 230 and be mounted on bracket The translational motion of the element of 230 tops.In addition, controller controls processing gas parameter.Since controller 290 controls translation fortune Dynamic, controller 290 possesses about bracket 230, the first sputtering source 211 with the first rotatable target 212, has second can revolve Turn the information of the second sputtering source 221 of target 222 and the current location of gas spray gun 254,256 and 258.Based on related sputtering group The position letter of part 210 and/or element or gas inlet component 250 in relation to gas inlet component 250 or sputtering component 210 Breath, controller 290 can control the total flow of the processing gas to sputtering component 210, such as pass through connecting line 262 by adjusting Flow.Controller 290 can further control the distribution of processing gas.This indicates that controller 290 is controllable to pass through other gas The local flow of the processing gas of body entrance (e.g. gas spray gun 254,256 and 258).Further, controller 290 can Gas with various contained in control processing gas source 260 mixes under how many ratio, to form the ingredient of currently processed gas.

In addition, controller can control pumping system 265, the line institute as connected controller 290 and vacuum pump system 265 in Fig. 5 Show.Controller is controllable from the total gas flow rate for being vacuum-treated the extraction of chamber 202, if also, there is more than one gas Outlet, controller can control the local flow distribution of each gas vent extraction.Controller can directly control vacuum pump system 265 (multiple) vacuum pump or controllable adjustable valve, wherein regulating valve can be arranged in such as vacuum pump connecting line 267, or for example The gas outlet of gas vent 204.

In such a manner, by control power parameter and processing gas parameter, the work of sputtering technology can be stablized Point, or even it is kept as more constant, cause the uniformity for the layer being sputtered onto substrate front surface to increase.

According to the equipment for coated substrates can be provided with the embodiment in conjunction with any embodiment described herein.This Substrate can be TFT substrate or chip.Substrate can be glass substrate, polymeric substrates or semiconductor substrate.Substrate can be large area Substrate, such as the 6th generation, the 7th generation, the 7.5th generation, the 8th generation, the 8.5th generation, the 10th generation or even higher large-area substrates.Substrate Size can be exemplified as be greater than or equal to 1100 millimeters x1250 millimeters, more than or equal to 1500 millimeters x1800 millimeters, be greater than or Equal to 2160 millimeters x2460 millimeters, more than or equal to 2200 millimeters x2500 millimeters or even greater than or equal to 2880 millimeters X3130 millimeters.Equipment can be the coating facility (installation) for being coated with such substrate, especially for by one layer Or the sputter material of multilayer is sputtered on such substrate.Equipment may include one or several processing chamber housings, one or more shiftings Send room, one or more load locking cavities, one or more swing modules and/or one or more rotary modules.Equipment These chambers and module can be sized to accommodate substrate as described herein.Wherein, substrate can transmit logical in an upright manner Equipment is crossed, uprightly means that shorter side is parallel to the direction of transfer of substrate and passes through equipment.In this case, compared to base Plate transmits other selections of substrate in a lateral manner, and the occupied area of equipment can be smaller, lateral to mean longer side While being parallel to direction of transfer.

Equipment includes being vacuum-treated chamber.Being vacuum-treated chamber can be connected to vacuum pump system, for evacuating at vacuum Manage chamber.Being vacuum-treated chamber and vacuum pump system can be configured to for providing the vacuum environment being vacuum-treated in chamber.This Term " vacuum " in application, which represents, is lower than 10^-2The pressure (such as, but not limited to about 10 of millibar (mbar)^-2Millibar, this situation can To be when processing gas is in vacuum processing chamber flowing), alternatively, particularly referring to lower than 10^-3Millibar pressure (such as but It is not limited to about 10^-5Millibar, this is not it may is that when having processing gas in vacuum processing chamber flowing).Vacuum chamber Room may include being vacuum-treated chamber wall.Being vacuum-treated chamber may include for being extremely vacuum-treated chamber and/or use for substrate-guided In one or more gates that substrate is sent out to vacuum processing chamber.This (multiple) gate may be formed at vacuum processing chamber wall At least one side wall in, e.g. in one or more side walls.This (multiple) gate may include for connecting vacuum tight It is connected to one or more gate valves of neighbouring chamber or proximity modules.

Being vacuum-treated chamber includes sputtering component.Sputtering component includes sputtering source.Sputtering source may include target, especially may be used Rotary target material or planar targets.This target may include following material or be made of following material: Al, Mo, Ti, Cu, ITO, IZO, The alloy or constituent of IGZO, W, Si, Nb or above-mentioned material.Sputtering source may include magnetron assembly, especially be aligned in sputtering Magnetron assembly inside the rotatable target in source.Magnetron assembly can have fixed orientation, or constructed can shake to execute Pendular motion.

Sputtering source can be the first sputtering source of sputtering component, and sputtering component may include N number of other sputtering source, wherein N In the range of from 1 to 20, e.g. in the range of from 1 to 10.For example, sputtering component may include 1,2,3,4,5,6, 7,8,9,10 or more other sputtering source.(multiple) other sputtering source (e.g. second, third, fourth-class sputtering Source) it can be identical with the first sputtering Source Type.The total quantity of sputtering source can be N+1, and sputtering source can be along straight line or arc Arrangement.The spacing arrangement that sputtering source can be fixed is between sputtering source, or spacing arrangement that can be different is between sputtering source.It splashes The source of penetrating can form sputtering source array.

According to embodiment described herein, sputters component and be moveable in being vacuum-treated chamber.In particular, sputtering component It can be moveable relative to chamber is vacuum-treated, especially with respect to (multiple) vacuum processing chamber walls.When substrate is loaded into When being vacuum-treated in chamber, sputtering component is moveable relative to substrate.Sputtering component can be removable in a manner of translational motion It is dynamic.The translational motion can be the substrate surface for being parallel to institute's coated substrates.The translational motion can be parallel to one or more Chamber wall, such as it is parallel to the antetheca and/or rear wall for being vacuum-treated chamber.The translational motion is at least in process described herein Qu Zhongke is continuous movement, especially uniform motion, i.e., with the movement of fixed rate.

Equipment may include being coupled to the drive system of sputtering component, and wherein drive system is configured for realizing sputtering component Translational motion.Component is sputtered, (multiple) sputtering source of component is especially sputtered, it is rack mountable.Bracket can translate The mode of movement is mobile.Equipment may include track, such as rail system, to the bracket supported and above moving track.Equipment It may include the drive system for being coupled to the bracket of sputtering component, the wherein constructed translation for being used to realize bracket of drive system is transported It is dynamic.

Equipment, especially vacuum processing chamber, it may include be arranged in the substrate-guided system being vacuum-treated in chamber.It is described Substrate-guided system can be arranged and be orientated, with the supporting substrate during coating.Substrate-guided system can be arranged for moving Substrate, which enters, to be vacuum-treated chamber or leaves from chamber is vacuum-treated, such as one or more of side wall by being vacuum-treated chamber A gate disengaging is vacuum-treated chamber.Substrate-guided system may include track, be used to support the substrate branch of substrate or bearing substrate Frame (e.g. roll assembly), and/or for guiding substrate/substrate holder track (e.g. to interact with substrate holder Magnetic rail).Component, especially bracket are sputtered, is moveable if it exists, can be along substrate-guided system.? Gas inlet component fixed and arranged sputters component, and especially bracket, may be arranged at gas in the case where being vacuum-treated in chamber Between body intake assembly and substrate-guided system.

Being vacuum-treated chamber may include treatment region.Treatment region at least can be parallel to substrate sender with vacuum processing chamber To substrate size with wide, and treatment region can at least be vacuum-treated in chamber perpendicular to the ruler of the substrate of substrate direction of transfer It is very little same high.Being vacuum-treated chamber may include shielding part.Treatment region can be defined by the gap between shielding part, or may include In gap.Shielding part can be arranged in substrate-guided system, to the shielding board during coating or substrate holder.It is vacuum-treated chamber It may include at least one non-process area except treatment region, such as be respectively arranged on the Liang Ge non-process area for the treatment of region side.Non- place Managing area can be at least with sputtering component or bracket the same as wide.Sputter the removable width at least over treatment region of component.In addition, sputtering group Part can be moved at least one non-process area, or be more than at least one non-process area.

Equipment further may include power supply, for supplying power to sputtering source.Power supply can further be configured for supplying Power is to N number of other sputtering source, and wherein N is as described earlier in this article.Power supply can be electrically connected to sputtering source and/or it is N number of in addition Sputtering source, be not be directly connected to (such as electric connection line via corresponding number) be exactly via between power distribution system in succession It connects.

Equipment further may include controller.Controller can be configured for according to the sputtering component being vacuum-treated in chamber Or the position that (multiple) sputtering source is current, power supply is applied to the power of (multiple) sputtering source, power supply is applied to (multiple) and splashes for control (multiple) voltage and power supply for penetrating source are applied to (multiple) electric current of (multiple) sputtering source.Controller can be configured for controlling Make the general power for being applied to (multiple) sputtering source and/or the total power profile among (multiple) sputtering source, i.e., each sputtering Source received general power part.Controller can be configured for controlling (multiple) electricity for being applied to (multiple) sputtering source respectively Pressure, and/or control is applied to (multiple) electric current of (multiple) sputtering source respectively.General power and total power profile are power parameters. In addition, being applied to (multiple) voltage of (multiple) sputtering source and being applied to (multiple) electric current of (multiple) sputtering source is also power ginseng Number.Controller can it is constructed come according to sputtering component position or sputter component multiple sputtering sources position, control power ginseng Number.For example, controller can be controlled for the power of non-reactive sputtering, and controller can be controlled for the (more of reactive sputtering It is a) voltage.

Controller can be configured for continuously adjusting at least one power parameter, especially when sputtering component is in sputter material During being sputtered from (multiple) sputtering source of sputtering component when continuous moving.Herein, " continuous adjustment " is not precluded at least one A power parameter can be constant situation in the position range of (multiple) sputtering source, but at least one power parameter is changed At least once.The adjustment occurs during sputtering technology.Controller can further be configured to adjust during pre-sputtering technique At least one whole power parameter, and independent of the position that pre-sputtering technique carries out.

Controller may be coupled to drive system, for controlling the translational motion of sputtering component.Controller can be configured for Obtain the information about sputtering module position, and the position of the element especially with regard to sputtering component as described herein.The information It can be obtained by sensor or other feedback devices.Alternatively, particularly, if controller is controlling the translational motion of sputtering component When (such as passing through drive system), controller can possess the information.

Controller may include memory segments for storing power configuration.Power configuration may include the control about power parameter Information processed, power parameter are related to sputtering component and/or the sputtering position of (multiple) sputtering source of component.Controller can be constructed (multiple) power configuration is read, with according to the position of (multiple) sputtering source being vacuum-treated in chamber, decision is applied to (more It is a) power of sputtering source.Power configuration can e.g. precalculate for what is predetermined.Controller can be configured for controlling System is applied to sputtering source and/or the power to N other sputtering sources, and wherein N is as described earlier in this article.Controller can basis The information about the equipment component current location that controller possesses or obtains, using the control information of power configuration, and Power parameter can correspondingly be controlled.Controller constructed can control power parameter, to maintain the stabilization of sputtering technology operating point. Controller can correspondingly adjust power parameter, such as adjustment general power is distributed with the power to individual sputtering sources, and makes to be located at more The local process condition of the target of a sputtering source is kept fixed.

Power configuration and include that control information in power configuration may depend on the geometry for being vacuum-treated chamber Other property, such as depending on the current phase between one or more vacuum outlets and sputtering component/(multiple) sputtering source To position.Chamber geometry shape along the motion path of sputtering component can additionally or alternatively change, and the change is for example Be the shape as chamber wall and caused by or the presence or absence of the additional element due to that can limit or influence sputtering environment and cause 's.Power configuration can reflect any such change of chamber geometry shape, because even in the case where these changes, control Information also allows to maintain the operating point of sputtering technology.

Being vacuum-treated chamber may include gas inlet component.Gas inlet component may include being at least connected with device, for connecting To one or more processing gas sources.Equipment may include one or more processing gas source, and/or may include one or Multiple connecting lines (such as one or more pipes or pipeline), enter for one or more of processing gas sources to be connected to gas At least one connector of mouth component.Processing gas or multiple processing gas may include in one or more of processing gas sources In, such as (multiple) processing gas for reactive sputtering or (multiple) processing gas for inert sputter.It is splashed for reacting The example for the processing gas penetrated is: O₂、N₂、H₂、H₂The mixture of O or above-mentioned gas.The model of processing gas for inert sputter Example is: the mixture of Ar, Xe, Kr, Ne or above-mentioned gas.

Gas inlet component may include M gas access, be vacuum-treated chamber for importing processing gas, wherein M exists In the range of from 1 to 30, especially in the range of from 2 to 20.The quantity M of gas access can by relational expression M=N'+1 and with The quantity N' of sputtering source is related, wherein N' be 1 or N+1, N as described above, or can by relational expression M=N'-1 and with sputtering source Quantity N' is related, and wherein N' is N+1, and N is as described above.These gas accesses it is arranged so that left from each pair of gas access and Into between the processing gas air-flow of vacuum processing chamber have a sputtering source.These gas accesses can it is arranged so that pair For each gas access, the processing gas air-flow of vacuum processing chamber is exited into not from specific gas access It is guided between same pairs of sputtering source.It these gas accesses can be arranged so that having a sputtering between each pair of gas access Source.It these gas accesses can be arranged so that having a gas access between each pair of sputtering source.Gas access can spray for gas Rifle.These gas accesses are at least fluidly connected with a connector, such as pass through pipe or pipe-line system.

Be vacuum-treated chamber may include one or more gas vents, e.g. L gas vent, wherein L from 1 to In the range of 10.One or more of gas vents can be configured for the connection with vacuum pump system, vacuum pump system packet Include one or more vacuum pumps.One or more of gas vents can be arranged in chamber wall or multiple chamber walls, such as It is vacuum-treated in the antetheca or rear wall of chamber.Equipment may include vacuum pump system, and especially may include being connected to one or more One or more vacuum pumps of gas vent.

Gas inlet component can be moved together with sputtering component.In particular, gas inlet component can pacify together with sputtering component Loaded on bracket.For at least one connector is connected to one or more processing gas sources connecting line (such as pipe or pipe Road) it can be flexible, or at least part can be flexible.For at least one connector to be connected to one or more Therefore the connecting line in processing gas source can react to the movement of gas inlet component by bending.Alternatively, gas access group Part, and the gas access of especially gas inlet component or multiple gas accesses, can stationary arrangement be vacuum-treated chamber in.

According to can be configured for the embodiment in conjunction with any embodiment described herein, controller according at vacuum The current position of sputtering source in reason chamber controls processing gas parameter, processing gas parameter be, for example, in following parameter extremely It is one few: total processing gas air-flow of vacuum processing chamber being directed by gas inlet component, passes through gas inlet component It is directed into the processing gas ingredient of vacuum processing chamber, and vacuum processing chamber is directed by gas inlet component Processing gas distribution.The control of distribution can include: control flows into vacuum chamber from multiple gas accesses of gas inlet component Indoor Local treatment gas flow.

According to can with the embodiment in conjunction with any embodiment described herein, extract out be vacuum-treated chamber air-flow can also Belong to processing gas parameter.Alternatively, or in addition, being vacuum-treated the relevant place of chamber to control to be directed into processing gas Process gases parameter, the position current according to the sputtering source being vacuum-treated in chamber, the controllable extraction of controller are vacuum-treated chamber Air-flow, extract the total air flow for being vacuum-treated chamber, and/or the local air flow point of control pump-and-treat system gas chamber out including control Cloth (especially control is distributed by the local air flow of one or more gas vent pump-and-treat systems gas chamber).For example, control The controllable extraction of device is vacuum-treated the gas pump rate and/or yield of chamber.Controller can control vacuum pump system, especially One or more vacuum pumps extract the air-flow for being vacuum-treated chamber out to control.Controller can in one or more gas vents or (multiple) the in-let dimple pump rate and/or yield of one or more vacuum pumps.Controller can directly control vacuum pump System or controllable adjustable valve, such as one or more regulating valves positioned at (multiple) outlets for being vacuum-treated chamber.

Controller constructed can control at least one processing gas parameter (such as total processing gas air-flow, processing gas Ingredient, processing gas distribution and/or extraction be vacuum-treated chamber air-flow), and be according to equipment following elements at least One current location controls: N number of other sputtering source (wherein N is as described earlier in this article), bracket and gas access One or more gas accesses of component.Controller can be configured at least one of control parameters described below: flow through M gas Total processing gas air-flow, processing gas ingredient and the processing gas distribution of body entrance, and be the position according to M gas access (wherein M is as described earlier in this article) of control, and/or controlled according to (multiple) sputtering source (multiple) position.It imports Total processing gas air-flow, processing gas ingredient and the processing gas distribution being vacuum-treated in chamber will be referred to as herein to be handled Gas access parameter, and the local air flow distribution for extracting the total air flow for being vacuum-treated chamber and extraction vacuum processing chamber out will be claimed For processing gas outlet parameter.These parameters are generally included under the term of " processing gas parameter ".Controller can be according to true (multiple) position control processing gas outlet parameter of (multiple) gas vent of empty processing chamber housing.

Controller can adjust at least one according to the current position of (multiple) sputtering source and/or (multiple) gas access Process gases parameter.It the current position of (multiple) sputtering source and/or (multiple) gas access can be relative to the base for being vacuum-treated chamber Plate guidance system, shielding part, (multiple) vacuum outlet or chamber wall or any other of vacuum processing chamber are fixed at very Element in empty processing chamber housing defines.It is vacuum-treated in chamber to receive coating if substrate is present in, (multiple) are current Position can be determined relative to substrate.

Controller can be configured for continuously adjusting at least one processing gas parameter, especially when sputtering component is sputtering During material is sputtered from (multiple) sputtering source of sputtering component when continuous moving.Herein, " continuous adjustment " be not precluded to A few processing gas parameter can be constant feelings in the position range of (multiple) sputtering source and/or (multiple) gas access Condition, but at least one processing gas parameter is changed at least once.The adjustment occurs during sputtering technology.Controller is further It can be configured to adjust at least one processing gas parameter during pre-sputtering technique, and independent of the position that pre-sputtering technique carries out It sets.

Controller can be configured for obtaining the information of the position about gas inlet component, and/or about described herein Gas inlet component element position information.The information can be obtained by sensor or other feedback devices.Alternatively, special Not, if when controller is controlling the movement of sputtering component (such as passing through drive system), controller can possess the letter Breath.

Controller may include memory segments, and memory segments are for storing gas parameter configuration.Gas parameter configuration can Including the control information about gas parameter, gas parameter and sputtering component, element (such as (multiple) gas for sputtering component Outlet) and/or gas inlet component (multiple) gas access position it is related.Controller can be held or obtain according to controller The information of current position of the element about equipment and can be correspondingly using the control information that gas parameter configures Control gas parameter.Controller can control valve, gas distributed system, gas branch pipe and/or pumping system, be joined with regulating gas Number.Controller constructed can control gas parameter, to maintain the stabilization of sputtering technology operating point.Controller can be by adjusting at Process gases parameter correspondingly adjusts processing gas environment, and is kept fixed the local process condition of (multiple) target.

Gas parameter configure and include gas parameter configuration in control information may depend on vacuum processing chamber it is several The other property of what shape, such as depending between one or more vacuum outlets and sputtering component/(multiple) sputtering source Current relative position.Along sputtering component motion path chamber geometry shape can additionally or substitution change, it is described Change be, for example, shape as chamber wall and caused by, or since the additional element that can limit or influence sputtering environment has Without and caused by.Gas parameter is distributed any such change that can reflect chamber geometry shape, because even in these changes In the case where, control information is also able to maintain that the operating point of sputtering technology.

It is schematically illustrated in Fig. 6, the method 600 for the coated substrates in being vacuum-treated chamber is provided.The method packet It includes: when the first power is applied to sputtering source, sputtering sputter material from sputtering source, wherein sputtering source is located relative to substrate First position, as represented by the reference symbol 610 in Fig. 6.The first position is also first relative to vacuum processing chamber Position.The method includes: to keep sputtering source mobile in a manner of translational motion relative to vacuum processing chamber, such as Fig. 6 in sputtering In reference symbol 620 represented by.Translational motion can be relative to substrate.Translational motion can be parallel to substrate surface, especially flat Row is in the front surface for the substrate for receiving coating.The method includes: to sputter when the second power is applied to sputtering source from sputtering source Sputter material, wherein sputtering source is located relative to the second position of substrate, as represented by the reference symbol 630 in Fig. 6.It is described The second position is also the second position relative to vacuum processing chamber, and is different from first relative to vacuum processing chamber It sets.The second position may be assumed that the result for being sputtering source relative to the translational motion for being vacuum-treated chamber.Substrate is in the sputtering technology phase Between can remain stationary, especially in first position and when being sputtered in the second position.Alternatively, substrate can be during sputtering technology Carry out pendulum motion.

When sputter material is sputtered, sputtering source can be moved, and can be especially continuously transported.It is provided to the function of sputtering source Rate can be current according to the sputtering source relative to substrate position and be continually adjusted.During adjusting power, it can control At least one power parameter selected from parameters described below: (a) being applied to the power of sputtering source, (b) is applied to the electricity of sputtering source It presses, and (c) is applied to the electric current of sputtering source, i.e. controlled parameter.The method can include: provide power configuration, power configuration indicates Function for sputtering source relative to the position of substrate.First power can be the power for first position indicated by power configuration Value, the second power can be the performance number for the second position indicated by power configuration.Sputtering source is in the first position face Zhong Kebu To substrate, and in the second position can be towards substrate.The power for being applied to sputtering source can be adjusted correspondingly, as described in Figure 3, so that The operating point of sputtering technology is kept fixed.

Sputtering source can be the first sputtering source, and can provide N number of other sputtering source, and wherein N can be as described above.It is N number of in addition Sputtering source can be arranged relative to the first sputtering source with fixed distance.The method can include: be applied to the first sputtering in control Source and when being applied to the general power and total power profile of N number of other sputtering source, from the first sputtering source and from N number of other sputtering Source sputters sputter material.Herein, the first sputtering source is located relative in the first position of substrate.N number of other sputtering source can The distance for moving together with the first sputtering source is in a manner of translational motion, and being kept fixed relative to the first sputtering source.From N number of The sputtering of other sputtering source can continue during translational motion.The method can include: selected from parameters described below in control At least one power parameter when from N number of other sputtering source sputter sputter material: (a) be applied to the first sputtering source with it is N number of The general power of other sputtering source (b) is applied to the total power profile of the first sputtering source Yu N number of other sputtering source, (c) applies To the voltage of the first sputtering source and N number of other sputtering source, and (d) it is applied to the first sputtering source and N number of other sputtering source Electric current, wherein the first sputtering source is located relative in the second position of substrate.Herein, when the first sputtering source in the second position When, compared with when the first sputtering source is in first position, at least one of general power and total power profile are different.

The method can include: to sputtering source provide the first processing gas environment, and in the first processing gas environment from Sputtering source sputters sputter material, and wherein sputtering source is located relative in the first position of substrate.The method can further comprise: The second processing gaseous environment for being different from the first processing gas environment is provided to sputtering source, and in second processing gaseous environment Sputter material is sputtered from sputtering source, wherein sputtering source is located relative in the second position of substrate.

First processing gas environment and second processing gaseous environment can make the part of (multiple) target of (multiple) sputtering source Sputtering condition is kept fixed.In other words, the operating point of sputtering technology can maintain in first and second position, especially first And any position between the second position can also be maintained.When sputter material is sputtered, sputtering source can be (such as continuous by movement And/or at the uniform velocity move).The processing gas environment of sputtering source can according to sputtering source relative to the current location of substrate or relative to The current location of any fixing element (such as substrate-guided system) as described herein for being vacuum-treated chamber, correspondingly makes tune It is whole.Processing gas environment can be with multiple gases of sputtering component as described herein, (multiple) sputtering source and/or gas inlet component The continuous translation motor coordination of entrance is consistently continuously adjusted.

First processing gas environment can be determined by first group of processing gas parameter.First group of processing gas parameter may include At least one of parameters described below: the first processing gas ingredient, first flowed into the first processing gas environment are always inwardly handled Gas flow, the first distribution for flowing into the inside processing gas air-flow in the part in the first processing gas environment, the first processing of outflow First point of first total air-flow outward outside gaseous environment and the outside air-flow in part outside the first processing gas environment of outflow Cloth.Second processing gaseous environment can be determined by second group of processing gas parameter.Second group of processing gas parameter may include following At least one of parameter: second total inside processing gas in second processing gas componant, inflow second processing gaseous environment Air-flow flows into the part in second processing gaseous environment inwardly the second distribution of processing gas air-flow, outflow second processing gas Second distribution of second total air-flow outward outside environment and the outside air-flow in part outside outflow second processing gaseous environment.The Two processing gas environment can be different from the first processing gas environment, and reason is at least one of following reasons: second gas Ingredient can be different from first gas ingredient；Second total inwardly processing gas air-flow can be with first total inwardly processing gas air-flow not Together；Second distribution of the inside processing gas air-flow in part can inwardly the first distribution of processing gas air-flow be different from part；Second Total air-flow outward can be different from first total air-flow outward；And the second distribution of the outside air-flow in part can be with the outside air-flow in part First distribution is different.

During the first moment or period first time, the first processing gas environment may include having the first quantity and first First processing gas ingredient of distribution.Method can include: the total inwardly processing gas air-flow of control and/or total outside air-flow, with The processing gas of the first quantity is provided in the first processing environment during first moment or period first time.Method can include: Controlling the first processing gas in a manner of particular kind of relationship (such as by relationship that gas volume percentage indicates) mixed gas Ingredient.Method can include: the first moment or period first time during in the first processing gas environment, it is logical by controlling The inside flow in part for the processing gas that gas access flows into vacuum processing chamber is crossed, and/or is that vacuum is passed through by control The gas part of the gas vent of processing chamber housing is to external flux, to control the first distribution of processing gas.At the second moment or During two time cycles, second processing gaseous environment may include with the second quantity with second distribution second processing gas at Point.The second quantity, second processing gas componant during the second moment or second time period, in second processing gaseous environment And the second distribution of processing gas can be as described in herein in regard to the first quantity, the first processing gas ingredient and the first distribution To control.Second gas ingredient can be different from first gas ingredient.Alternatively, or in addition, the second quantity can be with the first quantity not Together.Alternatively, or in addition, the first distribution can be different from the second distribution.

The second processing gaseous environment warp that the first processing gas environment provided at first position and the second place provide Selection, so that the operating point of sputtering sputter material maintains to fix.Processing gas environment can be according to (multiple) sputtering source and/or gas The position that multiple gas accesses of intake assembly are current is continuously adjusted, so that the operating point of sputtering technology maintains to stablize.

First processing gas environment can provide to sputtering source and N number of other sputtering source, and wherein N can be as described herein.The Two processing gas environment can provide to sputtering source and N number of other sputtering source.Gas access (such as gas access as described herein M gas access of component) it can be used to transport process gas, and generate at first position the first processing gas environment, the Second processing gaseous environment is generated at two positions or any other processing gas is generated at any position of (multiple) sputtering source Body environment.

The technical solution of at least some designs in particular to base plate coating of present disclosure is related in deposition, pattern Change and the processing of substrate and coating used in equipment, technique and material, representative example include but is not limited to be related to it is following Application: semiconductor and dielectric material and device, silicon-based wafer, flat-panel monitor (such as TFTs), exposure mask and filter, energy Amount conversion and reservoir (such as photovoltaic cell, fuel cell and battery pack), solid-state lighting (such as LEDs and OLEDs), magnetism With optical storage device, MEMS (Micro-Electro-Mechanical Systems, MEMS) and Nano electro-mechanical system (Nano-Electro-Mechanical Systems, NEMS), micro-optics and optical electro-mechanical system (Opto-Electro- Mechanical Systems, NEMS), micro-optics and photoelectron device, transparent substrate, building and vehicle glass, be used for metal And the metal system of polymer foil is shaped with encapsulation and micron and nanometer.

Though foregoing teachings are related to certain embodiments, other and further embodiment can be in the right for not departing from accompanying Range that claim is defined and be designed.

Claims

1. a kind of equipment for coated substrates, which is characterized in that the equipment includes:

It is vacuum-treated chamber, the vacuum processing chamber includes:

Component is sputtered, the sputtering component includes sputtering source, wherein the sputtering component can be relative to the vacuum chamber The mode of the translational motion of room is mobile；And

Wherein the equipment includes:

Power supply, to apply power to the sputtering source；And

Controller, the controller are configured to according to the sputtering component being vacuum-treated in chamber or the sputtering The current location in source, to control at least one power parameter selected from following groups: being applied to described splash by the power supply The power in source is penetrated, the voltage of the sputtering source is applied to by the power supply and the sputtering is applied to by the power supply The electric current in source.

2. equipment according to claim 1, wherein the sputtering source includes rotatable target.

3. equipment according to claim 1, wherein the translational motion is parallel to substrate-guided system.

4. equipment according to claim 1, described including the substrate-guided system being set in the vacuum processing chamber Substrate-guided system is configured to support the substrate during coating, and for the substrate to be moved into the vacuum processing Chamber and the removal vacuum processing chamber, wherein the translational motion is parallel to the substrate-guided system.

5. equipment according to claim 2, described including the substrate-guided system being set in the vacuum processing chamber Substrate-guided system is configured to support the substrate during coating, and for the substrate to be moved into the vacuum processing Chamber and the removal vacuum processing chamber, wherein the translational motion is parallel to the substrate-guided system.

6. equipment according to claim 1, the drive system including being coupled to the sputtering component, wherein the driving is System is configured for realizing the translational motion of the sputtering component, wherein the controller is coupled to the drive system, To control the translational motion of the sputtering component.

7. equipment according to claim 3, the drive system including being coupled to the sputtering component, wherein the driving is System is configured for realizing the translational motion of the sputtering component, wherein the controller is coupled to the drive system, To control the translational motion of the sputtering component.

8. equipment according to claim 1, wherein the sputtering source is constructed, so that the sputtering source is in first position The substrate is not faced, and wherein the sputtering source is constructed, so that the sputtering source faces the base in the second position Plate.

9. equipment according to claim 2, wherein the sputtering source is constructed, so that the sputtering source is in first position The substrate is not faced, and wherein the sputtering source is constructed, so that the sputtering source faces the base in the second position Plate.

10. equipment according to claim 1, wherein the controller is configured for continuing to adjust at least one described function At least one power parameter in rate parameter.

11. equipment according to claim 1 to 10, wherein the controller includes memory, the memory Comprising power configuration, function of the power configuration as the position of the sputtering source in the vacuum processing chamber, wherein The controller is constructed to read the power configuration, with the position according to the sputtering source in the vacuum processing chamber It sets, determines the power for being applied to the sputtering source.

12. equipment according to claim 1 to 10, wherein the sputtering component includes N number of other sputtering Source, wherein N number of other sputtering source is identical with the type of the sputtering source in the range of 1 to 10, and wherein by N, and its Described in controller be configured for according in the sputtering component or the sputtering source or N number of other sputtering source The current location of one sputtering source controls at least one power parameter selected in parameters described below: being applied by the power supply Into the general power of the sputtering source and N number of other sputtering source, the sputtering source and N number of other sputtering source Total power profile, be applied to by the power supply voltage of the sputtering source and N number of other sputtering source and by described Power supply is applied to the electric current of the sputtering source and N number of other sputtering source.

13. equipment according to claim 11, wherein the sputtering component includes N number of other sputtering source, wherein N is 1 N number of other sputtering source is identical with the type of the sputtering source in the range of 10, and wherein, and the wherein controller It is configured for according to a sputtering source in the sputtering component or the sputtering source or N number of other sputtering source The current location controls at least one power parameter selected in parameters described below: being applied to the sputtering source by the power supply And the general power point in the general power of N number of other sputtering source, the sputtering source and N number of other sputtering source It cloth, the voltage that the sputtering source and N number of other sputtering source are applied to by the power supply and is applied to by the power supply The electric current of the sputtering source and N number of other sputtering source.

14. the equipment according to any one of claim 3-5, further includes at least one of following elements:

Shielding part, the shielding part is set to the substrate-guided system, to shield the substrate or substrate during coating Carrier；And

Chamber wall；

Wherein whether the controller is configured to according to the sputtering component or the sputtering source towards the substrate or face To the shielding part or towards the chamber wall, to change the power for being applied to the sputtering source.

15. equipment according to claim 14, wherein the controller includes memory, the memory is matched comprising power It sets, function of the power configuration as the position of the sputtering source in the vacuum processing chamber, wherein the controller It is constructed to read the power configuration, with the position according to the sputtering source in the vacuum processing chamber, determine to apply To the power of the sputtering source.

16. equipment according to claim 14, wherein the sputtering component includes N number of other sputtering source, wherein N is 1 N number of other sputtering source is identical with the type of the sputtering source in the range of 10, and wherein, and the wherein controller It is configured for according to a sputtering source in the sputtering component or the sputtering source or N number of other sputtering source The current location controls at least one power parameter selected in parameters described below: being applied to the sputtering source by the power supply And the general power point in the general power of N number of other sputtering source, the sputtering source and N number of other sputtering source It cloth, the voltage that the sputtering source and N number of other sputtering source are applied to by the power supply and is applied to by the power supply The electric current of the sputtering source and N number of other sputtering source.