JPH0387355A - Coating of substrate with copper - Google Patents
Coating of substrate with copperInfo
- Publication number
- JPH0387355A JPH0387355A JP2215097A JP21509790A JPH0387355A JP H0387355 A JPH0387355 A JP H0387355A JP 2215097 A JP2215097 A JP 2215097A JP 21509790 A JP21509790 A JP 21509790A JP H0387355 A JPH0387355 A JP H0387355A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- substrate
- oxygen
- argon
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000010949 copper Substances 0.000 title claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 24
- 238000000576 coating method Methods 0.000 title claims abstract description 20
- 239000011248 coating agent Substances 0.000 title claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005751 Copper oxide Substances 0.000 claims abstract description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 6
- 239000012300 argon atmosphere Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 239000007767 bonding agent Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000011230 binding agent Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000002079 cooperative effect Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は直流電源を持ち、これは真空可能加工室中に配
置された少なくとも1つのスパッター陰極1つと結合さ
れ、該陰極は電気的に銅ターゲットと共同作用し、該タ
ーゲットはスパッターできかつそのスパッター粒子が基
板上に析出し、その際真空可能加工室にアルゴンガスを
導入できる装置を使用し、例えば酸化アルミニウムセラ
ミック板またはポリイミドフィルムの基板を銅でコーチ
ングする方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention has a direct current power source coupled to at least one sputter cathode disposed in a vacuum-enabled processing chamber, the cathode electrically connected to a copper A substrate of, for example, an aluminum oxide ceramic plate or a polyimide film is co-acted with a target which can be sputtered and whose sputtered particles are deposited on a substrate, using a device which can introduce argon gas into a vacuum-enabled process chamber. On how to coach with copper.
支持
電気配線、いわゆるプリント配線用足体板として酸化ア
ルミニウム筐たは合成樹脂からのなる切片を、第1製造
段階でチタンからの固着剤でコーチングし、その際その
固着剤に第2製造段階で導電剤として銅でスパッター法
を使用してコーチングして使用することは公知である。A section made of an aluminum oxide housing or a synthetic resin as a supporting electrical wiring, so-called printed circuit board, is coated with a bonding agent made of titanium in the first production step, the bonding agent being coated in the second production step. It is known to use copper as a conductive agent by coating it by sputtering.
その後で該銅皮膜をホトレジストで覆い写真技術的工程
を経た後浴で例えばぶつ化水素酸からの浴でエツチング
する。The copper coating is then covered with a photoresist and etched in a post-photographic process, for example in a bath of hydrofluoric acid.
この従来の方法は一方で時間がかかシ従って高価でおる
という欠点があシ、他方で屡々製品基板上に化学薬品の
跡が残シ、これがその後で板ないしは完成配線板を使用
不可能にする欠点がある。This conventional method has the disadvantage, on the one hand, that it is time consuming and therefore expensive, and on the other hand it often leaves chemical traces on the product board, which subsequently renders the board or the finished circuit board unusable. There are drawbacks to doing so.
従って本発明の課題はチタンからの固着剤皮膜を断念す
ることができ電気伝導性皮膜釦よび電気回路のためにコ
ーチングする方法を見出すことであった。The object of the present invention was therefore to find a method of coating electrically conductive coatings for buttons and electrical circuits, which makes it possible to abandon adhesive coatings from titanium.
その上にな釦従来のないしは既存の装置筐たは設備をそ
のために不適当ならしむることなく、ないしはそれらに
著しい、または費用を要する改造lたは変更を行わなけ
ればならないということもなく基板上のスパッターされ
た銅皮膜の固着性が著しく改良されるべきである。In addition, the button can be mounted on the board without making conventional or existing equipment or equipment unsuitable for this purpose or without having to make significant or costly modifications or changes to them. The adhesion of the top sputtered copper coating should be significantly improved.
前記課題は本発明により、アルゴン導入口に加えて酸素
のための導入口を備え、その際酸素を導入することは該
導入管路に挿入した弁を介して制御でき酸素の量は第1
の加工段階の開固着剤として作用する酸化銅皮膜を生成
し、その上にアルゴン雰囲気を調整した後に純銅を導電
性皮膜として析出するように配量することで解決される
。According to the present invention, the above problem is solved by providing an inlet for oxygen in addition to the argon inlet, in which case the introduction of oxygen can be controlled via a valve inserted in the inlet pipe, and the amount of oxygen can be controlled by the first
The solution is to form a copper oxide film that acts as an opening fixing agent in the processing step, and then, after adjusting the argon atmosphere, dispense pure copper so that it is deposited as a conductive film.
本発明は種々の実施可能性がある;その1つを添付の図
に模式に詳細に示した。すなわち、第1図に釦いて基板
1はAl2O3よりなる板の形で示され、これは薄い、
導電性の銅皮膜2で装備さるべきである。この基板1に
銅ターゲット3が向い合っていて、これがスパッターさ
れる。The invention has various possibilities of implementation, one of which is schematically shown in more detail in the attached figures. That is, in FIG. 1, the substrate 1 is shown in the form of a plate made of Al2O3, which is thin and
It should be equipped with a conductive copper coating 2. A copper target 3 faces this substrate 1, and is sputtered.
該ターゲット3は断面U形のエレメント4を介して電極
5と結合していて、該電極はヨーク6上に載って訃シ、
これはエレメント4とその間にろ個の永久磁石γ、8.
9を入れている。3個の永久磁石7,8.9の極はター
ゲット3に向う極性は互に交替していて、外側の永久磁
石7.90両者のS極はそれぞれ中央の永久磁石8のN
極と釦よそ円弧状の磁場をターゲット4全通して作用し
ている。この磁場はターゲット3の前のプラズマを密に
し、その結果プラズマは磁場がその円弧の最大を有する
処で最大の密度を持つ。プラズマ中のイオンは直流電源
10より発せられる直流電圧にもとづき構成される電場
によシ加速される。この直流電源10はその@極と2つ
の導電性インダクタンス1112を介し電極5と結合さ
れている。該電場はターゲット3の表面に垂直に立ちプ
ラズマの陽イオンをこのターゲット3の方向に加速する
。The target 3 is connected to an electrode 5 via an element 4 having a U-shaped cross section, and the electrode rests on a yoke 6 and dies.
This consists of element 4 and permanent magnets γ, 8.
I have entered 9. The poles of the three permanent magnets 7, 8, and 9 are alternately facing the target 3, and the S poles of the outer permanent magnets 7, 90 are the N poles of the central permanent magnet 8, respectively.
An arc-shaped magnetic field is applied to the entire target 4 around the pole and button. This magnetic field densifies the plasma in front of the target 3, so that the plasma has a maximum density where the magnetic field has its arc maximum. Ions in the plasma are accelerated by an electric field constructed based on a DC voltage generated by a DC power supply 10. This DC power supply 10 is coupled to the electrode 5 via its @ pole and two conductive inductances 1112. The electric field stands perpendicular to the surface of the target 3 and accelerates positive ions of the plasma toward the target 3.
これによって多くの渣たは少い多くの原子または粒子が
ターゲット3から打ち出され、それも特に磁場が最大で
ある領域13.14からである。スパッターされた原子
または粒子は基板1の方向に移動し、そこでこれらは薄
い皮膜2として析出する。This causes more or fewer atoms or particles to be ejected from the target 3, especially from the region 13.14 where the magnetic field is at a maximum. The sputtered atoms or particles move towards the substrate 1, where they are deposited as a thin film 2.
前述の装置の制御のために、データを処理し制御司令を
与えるコンピュータを装備することができる。このコン
ピュータに例えば加工室15.15a中の測定した粒子
圧の値を入力することができる。これら3よび他のデー
タにもとづきコンピュータは例えばガス気流を弁18゜
19$−よびガス導入管22.23を介して制御しかつ
陰極5の電圧を調整することができる。For control of the aforementioned device, a computer can be provided which processes the data and provides control commands. For example, the value of the measured particle pressure in the processing chamber 15.15a can be entered into this computer. On the basis of these and other data, the computer can, for example, control the gas flow via the valves 18, 19 and the gas inlet pipes 22, 23 and adjust the voltage at the cathode 5.
筐た該コンピュータは他のすべての変数、例えば陰極電
流訃よび磁場強度を制御する位置にある。このようなコ
ンピュータは公知であるからその構成の記載はしないこ
とにする。The enclosed computer is in position to control all other variables, such as cathode current and magnetic field strength. Since such computers are well known, their configuration will not be described.
板状の基板1上の銅皮膜2の固着性を改良するためには
、1ず基板1の表面に非常に薄い固着剤皮膜を施こす。In order to improve the adhesion of the copper coating 2 on the plate-shaped substrate 1, first a very thin adhesive coating is applied to the surface of the substrate 1.
それには矢印Fの方向に加工室25を通過して運ばれる
基板1をアルゴン釦よび酸素からのガス混合物にさらし
、その際容器17からの酸素成分をこれが進行する工程
により直に完全に使いつくされるように配量し、その結
果その後で純粋なアルゴン雰囲気が加工室25中で基板
1の周囲を支配しそれに相応して純銅を酸化銅からなる
固着剤皮膜の上にスパッタすることである。For this purpose, the substrate 1, which is conveyed through the processing chamber 25 in the direction of the arrow F, is exposed to a gas mixture of an argon button and oxygen, the oxygen component from the container 17 being immediately completely used up by the process which is proceeding. so that a pure argon atmosphere then prevails around the substrate 1 in the processing chamber 25 and correspondingly pure copper is sputtered onto the binder film consisting of copper oxide. .
支
担持体ないしは基板1に酸化銅皮膜を施すことは特に二
つの重要な長所がある:すなわち、支
1、鍵持体、すなわち例えば基板1に対する純銅皮膜2
の固着は非常に良好であるから電子部品(IC1抵抗、
コンデンサー等)を直接この皮膜にはんだづけすること
ができ、これがその際または後に機械的応力の際にはが
れる(表面実装素子)という危険がない。The application of a copper oxide coating to the support or substrate 1 has two particularly important advantages: the pure copper coating 2 on the support 1, on the key carrier, i.e. for example on the substrate 1.
The adhesion of the electronic components (IC1 resistor,
Capacitors, etc.) can be soldered directly to this coating, without the risk that it will come off during or later during mechanical stress (surface-mounted components).
2、 これは例えば不連続のプリント導電体を構成する
ためにエツチング加法が適用できる。2. This can be applied, for example, to an etching process to construct discontinuous printed conductors.
この加工では強く腐蝕する液体(例えばふつ化水素酸)
を持つ浴で加工品を処理することが省略できるからであ
る。This process uses strongly corrosive liquids (e.g. hydrofluoric acid).
This is because it is possible to omit processing the processed product in a bath with a high temperature.
第2図による実施例の場合はストリップコーチング装置
で、本装置では2つの電極30゜31がコーチング室3
2に装備され、そのター−テラ)33.34から同時に
銅がストリップ状基板35が巻出しロール36からコー
チングロール37を介して巻込みロールに巻かれる間に
スパッターされる。陰極34の領域に向ってガス導入管
が開口し、それを介してガス貯蔵容器41から酸素が陰
極31の領域に流入できる。The embodiment according to FIG. 2 is a strip coating device, in which two electrodes 30° 31 are connected to the coating chamber 3.
At the same time, copper is sputtered from the substrate 33, 34 while the strip substrate 35 is being wound from an unwinding roll 36 via a coating roll 37 to a winding roll. A gas inlet pipe opens in the area of the cathode 34 , via which oxygen can flow into the area of the cathode 31 from the gas storage container 41 .
第2のガス導入管40を通してアルゴンが貯蔵容器42
から加工内32に流入する。電子制御系45はコーチン
グ加工の間、ガス量を、ストリップ状基板35上の一面
に第1陰極31の領域で酸化鋼のみかぁ・よび第2の陰
極30の領域では純銅を析出するよう配量せしめる。Argon is supplied to the storage vessel 42 through the second gas introduction pipe 40.
Flows into the machining interior 32 from there. During the coating process, the electronic control system 45 meters the amount of gas such that only oxidized steel is deposited on the strip-shaped substrate 35 in the area of the first cathode 31 and pure copper in the area of the second cathode 30. urge
第2図による装置をよシ良く理解するためなお説明すれ
ば、タービン)30.31はブロックに設置されて調整
でき冷却液体を導く管46゜46aないしは47,4γ
aに接続され、核管は同時にターゲットないしはその磁
石に電流を直流電源10から供給する。ガス導入のため
の電磁弁43.44を制御する電子制御器45はな釦詳
しい一連のパラメータが必要でアシ、このために(これ
はよりよい展望のため詳しくは描いてない)また1つの
電源釦よび例えば加工室中の圧力を検出するセンサーと
結合させる。For a better understanding of the device according to FIG. 2, it may be further explained that the turbine 30.31 is installed in the block and can be adjusted by a tube 46° 46a or 47,4γ for conducting the cooling liquid.
a, and the nuclear tube simultaneously supplies current to the target or its magnet from a DC power source 10. The electronic controller 45 that controls the solenoid valves 43 and 44 for gas introduction requires a detailed set of parameters, for which purpose (this is not depicted in detail for a better perspective) and a power supply. It is coupled to a button and, for example, a sensor that detects the pressure in the processing chamber.
この際本発明に重要なことは固着皮膜を製造する間の流
入する酸素釦よび流入するアルゴンの量が互に適当な比
にあシかつまた通過するストリップpよびスパッター粒
子流の速度が適当に調整されていることである。In this case, what is important for the present invention is that the amounts of oxygen and argon flowing in during the production of the adhesive film are in an appropriate ratio to each other, and that the speed of the passing strip P and sputter particle flow is appropriate. It is something that has been adjusted.
第1図は本発明による実施例で1個の陰極を使用して板
状基板をコーチングするスパッター装置の略示断面図あ
・よび第2図は本発明による実施例に釦けるストリップ
をフーチングするたたの2個の陰極を有するスパッター
装置の略示断面図である。
1・・・基板、5・・・陰極、10・・・直a電源、1
5・・・加工室、15a・・・加工室、19・・・升、
20・・・酸素導入口、21・・・アルゴン導入口、3
o・・・陰極、・・・陰極、
2・・・加工室、
3・−・ターケゞツ
ト、
4・・・ターゲット、
5・・・基板、
9・・・導入管、
0・・・導入管FIG. 1 is a schematic cross-sectional view of a sputtering apparatus for coating a plate-shaped substrate using one cathode in an embodiment of the present invention, and FIG. 1 is a schematic cross-sectional view of a sputtering device having two cathodes; FIG. 1...Substrate, 5...Cathode, 10...Direct a power supply, 1
5... Processing room, 15a... Processing room, 19... Masu,
20...Oxygen inlet, 21...Argon inlet, 3
o...Cathode,...Cathode, 2...Processing chamber, 3...Target, 4...Target, 5...Substrate, 9...Introduction tube, 0...Introduction tube
Claims (1)
(15,15a,32)中に配置された少なくとも1つ
のスパッター陰極(5;30,31)と結合され、該陰
極は銅ターゲット(3;33,34)と電気的に共同作
用し、該ターゲットはスパッターできかつそのスパッタ
ー粒子は基板(1;35)上に析出し、その際該真空可
能加工室にアルゴンガスを導入できる装置を使用して銅
で基板をコーチングする方法において、アルゴンガス導
入口(21,40)に加えて酸素のための導入口(20
,39)を備え、その際酸素の導入は導入管路(23,
39)に挿入された弁 (19,43)を介して制御でき酸素の量を、第1加工
段階の間は基板(1,35)に固着剤として作用する酸
化銅皮膜を生成し、その上に加工室(15,15a;3
2)でアルゴン雰囲気を調整の後に純銅を導電性皮膜と
して析出するように配量できることを特徴とする銅で基
板をコーチングする方法。1. It has a direct current power source (10), which power source is coupled to at least one sputter cathode (5; 30, 31) arranged in a vacuum-enabled processing chamber (15, 15a, 32), said cathode is connected to a copper target (3). ; 33, 34), the target can be sputtered and the sputtered particles are deposited on the substrate (1; 35), using a device capable of introducing argon gas into the vacuum-enabled processing chamber. In addition to the argon gas inlet (21, 40), an inlet for oxygen (20) is used to coat the substrate with copper.
, 39), and the oxygen is introduced through the introduction pipe (23, 39).
The amount of oxygen can be controlled via a valve (19, 43) inserted in the substrate (1, 39) during the first processing step to produce a copper oxide film which acts as a bonding agent on the substrate (1, 35) and processing room (15, 15a; 3
A method for coating a substrate with copper, which is characterized in that after adjusting the argon atmosphere in step 2), the amount of pure copper can be deposited as a conductive film.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3926877.2 | 1989-08-16 | ||
DE3926877A DE3926877A1 (en) | 1989-08-16 | 1989-08-16 | METHOD FOR COATING A DIELECTRIC SUBSTRATE WITH COPPER |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0387355A true JPH0387355A (en) | 1991-04-12 |
Family
ID=6387118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2215097A Pending JPH0387355A (en) | 1989-08-16 | 1990-08-16 | Coating of substrate with copper |
Country Status (3)
Country | Link |
---|---|
US (1) | US5108571A (en) |
JP (1) | JPH0387355A (en) |
DE (1) | DE3926877A1 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05148634A (en) * | 1991-11-22 | 1993-06-15 | Nec Corp | Sputtering apparatus |
JP3631246B2 (en) * | 1992-09-30 | 2005-03-23 | アドバンスド エナージィ インダストリーズ,インコーポレイテッド | Formally precise thin film coating system |
US5427669A (en) * | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
US6217717B1 (en) | 1992-12-30 | 2001-04-17 | Advanced Energy Industries, Inc. | Periodically clearing thin film plasma processing system |
US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
US5346601A (en) * | 1993-05-11 | 1994-09-13 | Andrew Barada | Sputter coating collimator with integral reactive gas distribution |
JP3175894B2 (en) * | 1994-03-25 | 2001-06-11 | 株式会社半導体エネルギー研究所 | Plasma processing apparatus and plasma processing method |
JPH08190091A (en) * | 1995-01-11 | 1996-07-23 | Aneruba Kk | Thin film substrate for liquid crystal display, liquid crystal display using the thin film substrate and producing device for thin film substrate of liquid crystal display |
DE19506515C1 (en) * | 1995-02-24 | 1996-03-07 | Fraunhofer Ges Forschung | Reactive coating process using a magnetron vaporisation source |
WO1996031899A1 (en) | 1995-04-07 | 1996-10-10 | Advanced Energy Industries, Inc. | Adjustable energy quantum thin film plasma processing system |
US5576939A (en) * | 1995-05-05 | 1996-11-19 | Drummond; Geoffrey N. | Enhanced thin film DC plasma power supply |
US6171714B1 (en) | 1996-04-18 | 2001-01-09 | Gould Electronics Inc. | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
US5682067A (en) * | 1996-06-21 | 1997-10-28 | Sierra Applied Sciences, Inc. | Circuit for reversing polarity on electrodes |
SE509933C2 (en) * | 1996-09-16 | 1999-03-22 | Scandinavian Solar Ab | Methods and apparatus for producing a spectrally selective absorbent layer for solar collectors and produced layer |
BE1010797A3 (en) * | 1996-12-10 | 1999-02-02 | Cockerill Rech & Dev | Method and device for forming a coating on a substrate, by sputtering. |
US6011704A (en) * | 1997-11-07 | 2000-01-04 | Sierra Applied Sciences, Inc. | Auto-ranging power supply |
US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
US5993613A (en) * | 1997-11-07 | 1999-11-30 | Sierra Applied Sciences, Inc. | Method and apparatus for periodic polarity reversal during an active state |
US5990668A (en) * | 1997-11-07 | 1999-11-23 | Sierra Applied Sciences, Inc. | A.C. power supply having combined regulator and pulsing circuits |
US5889391A (en) * | 1997-11-07 | 1999-03-30 | Sierra Applied Sciences, Inc. | Power supply having combined regulator and pulsing circuits |
DE19850592C1 (en) * | 1998-11-03 | 2000-10-12 | Lpkf Laser & Electronics Ag | Adhesion promoter layer for creating adhesive conductor structures on electronic insulation materials |
US6770175B2 (en) * | 2001-04-16 | 2004-08-03 | Sanyo Electric Co., Ltd. | Apparatus for and method of forming electrode for lithium secondary cell |
JP4673858B2 (en) * | 2005-01-19 | 2011-04-20 | 株式会社アルバック | Sputtering apparatus and film forming method |
DE102007021896A1 (en) * | 2007-05-10 | 2008-11-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Flexible printed circuit board material and method of making the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT215159B (en) * | 1959-06-23 | 1961-05-25 | Balzers Hochvakuum | Process for the production of a firm connection between workpieces made of polyhalogenolefins and a. Materials |
DE2533524C3 (en) * | 1975-07-26 | 1978-05-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Process for the production of a covering made of copper or a copper alloy on a carrier body |
DE2821119C2 (en) * | 1978-05-13 | 1983-08-25 | Leybold-Heraeus GmbH, 5000 Köln | Method and arrangement for regulating the discharge process in a cathode sputtering system |
DE3017713A1 (en) * | 1980-05-08 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Metallising polymer films - by sputtering adhesion promoting layer onto film and then vacuum depositing metal, used for resistance layers |
US4302498A (en) * | 1980-10-28 | 1981-11-24 | Rca Corporation | Laminated conducting film on an integrated circuit substrate and method of forming the laminate |
US4608243A (en) * | 1983-04-04 | 1986-08-26 | Borg-Warner Corporation | High hardness hafnium nitride |
-
1989
- 1989-08-16 DE DE3926877A patent/DE3926877A1/en not_active Withdrawn
-
1990
- 1990-08-16 JP JP2215097A patent/JPH0387355A/en active Pending
-
1991
- 1991-10-04 US US07/770,772 patent/US5108571A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3926877A1 (en) | 1991-02-21 |
US5108571A (en) | 1992-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0387355A (en) | Coating of substrate with copper | |
EP2390380B1 (en) | Sputtering equipment, sputtering method and method for manufacturing an electronic device | |
US4557796A (en) | Method of dry copper etching and its implementation | |
WO2011007834A1 (en) | Film-forming apparatus and film-forming method | |
JPH04325680A (en) | Device for attaching reactive film onto substrate | |
JP2007150012A (en) | Device and method for processing plasma | |
JPH06220627A (en) | Film forming device | |
JPH03134168A (en) | Device and method of covering plastic substrate with metal | |
CN102471879B (en) | Film-forming apparatus | |
JPS5816068A (en) | Target electrode structure for planer magnetron system spattering device | |
KR101087514B1 (en) | Dry etching method | |
JPS61246368A (en) | Depositing method for metallic film | |
JPH09316632A (en) | Method for depositing optically transparent and conductive layer on substrate consisting of transparent material | |
TW202008464A (en) | Plasma processing method and plasma processing device | |
CN111128702A (en) | Preparation method of metal electrode | |
JPS63153266A (en) | Sputtering device | |
JP2002343775A (en) | Etching device | |
JP2002252213A (en) | Plasma etching method | |
US5403663A (en) | Process for coating a polycarbonate substrate with an aluminum-silicon alloy | |
JP3099153B2 (en) | Film processing equipment | |
CN113699484A (en) | Shell, coating process thereof and electronic equipment | |
RU2211881C2 (en) | Process forming film coat and facility for its realization | |
JPH0250958A (en) | Film-forming equipment by sputtering method | |
JPS63307254A (en) | Apparatus for forming thin oxide film | |
JPS619571A (en) | Manufacture of thin film |