CN207016847U - Flexible magnetron sputtering plating horizontal homogeneity control device - Google Patents
Flexible magnetron sputtering plating horizontal homogeneity control device Download PDFInfo
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- CN207016847U CN207016847U CN201720624704.5U CN201720624704U CN207016847U CN 207016847 U CN207016847 U CN 207016847U CN 201720624704 U CN201720624704 U CN 201720624704U CN 207016847 U CN207016847 U CN 207016847U
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- magnetron sputtering
- degree
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Abstract
This technology discloses a kind of flexible magnetron sputtering plating horizontal homogeneity control device, nozzle row is provided with gas nozzle, magnetron sputtering degree monitoring probe has multiple, sputtering degree for detection gas nozzle, magnetron sputtering degree monitoring probe is connected by shielding electric signal output line with magnetron sputtering degree analyzing comparison means input, the output end of magnetron sputtering degree analyzing comparison means is connected by shielding electric signal output line with valve opening control device, valve opening control device is used for the opening and closing degree for controlling electrically operated valve, individually electrically operated valve is provided with each gas nozzle, gas source by stainless steel tube successively with gas pressure stable-pressure device, electrically operated valve, gas nozzle is connected.This technology device can control horizontal each point sputtering degree consistent, so as to control corresponding points gas distribution density, reach the purpose for controlling horizontal respective points deposition so that horizontal each point film properties index uniformity.
Description
Technical field
This technology is related to a kind of flexible magnetron sputtering plating horizontal homogeneity control device, belongs to magnetron sputtering technology
Field.
Background technology
Principle of magnetron-sputtering is to be collided during electronics accelerates to fly to substrate in the presence of electric field with ar atmo,
Substantial amounts of argon ion and electronics are ionized out, electronics flies to substrate, and argon ion accelerates to bombard target in the presence of electric field, sputtered
Substantial amounts of target atom, in the target atom of neutrality（Or molecule）It is deposited on film forming on substrate.
The working gas system of conventional magnetron sputter coating, by working gas storage tank, gas pressure stabilizer group and valve
Line up.Working gas passes through steady by valve dispatch gas, manostat control output gas gross pressure again after manostat
Fixed, the unit interval total gas flow rate of output is fixed.Advantage is that equipment is simple, low cost.Shortcoming be target surface sputtering degree by
System vacuum stabilization etc. influences.
Manual flow controller is added in magnetron sputtering coating system later, its working gas is supplied by a valve row
Gas, manually flow controller adjusts gas flow, to solve because of vacuum system stability influence to the consistent of sputtering degree
Property.But shortcoming is, the reaction speed controlled manually is not as good as pace of change impacted in vacuum chamber.Control influences hysteresis, precision
It is low.
Present more using plasma radiation monitoring systems（PEM）, for substituting manual adjustment work gas flow, with solution
Certainly magnetron sputtering reaction speed, solves the stability and uniformity of sputtering degree.
In vacuum coating reactive sputtering process, the spectral line position of the emission spectrum from vacuum coating discharge plasma
Put, the composition depending on vacuum coating target, vacuum coating gas componant and vacuum coating compound.According to this vacuum coating
The change can of discharge plasma intensity of emission spectra is used for controlling the technical process of vacuum coating reactive sputtering.Vacuum Deposition
The emission spectrum of film plasma is transferred to vacuum coating by the parallel light tube in vacuum coating sputtering chamber, fibre system and sputtered
Outdoor filter, then PEM controllers are input to by photomultiplier, prime amplifier, and compared with intensity set point, so
After output signals on piezo electric valve, manipulate the open and close of piezo electric valve, with control input to vacuum coating sputter house vacuum
The flow of plated film reacting gas.Because the poisoning of vacuum coating target is very fast, so the reaction speed of this piezo electric valve must be with
Chemical time（-1ms）In same magnitude.Using the method for above-mentioned PEM closed-loop control, vacuum coating can be sputtered
State maintains any one operating point on lag loop.Especially for vacuum coating reactive sputter-deposition TiO2、SnO2With
ITO vacuum coating films, its technique for vacuum coating stability are substantially improved.But it can not solve horizontal each point and splash
The control of the extent of reaction is penetrated, control can not be played for the uniformity controlling of the indexs such as horizontal film thickness, face impedance and light transmission
Make and use.
Horizontal each point gas flow is not quite similar, but effect --- and sputtering point gas flow target surface obtains plasma density's distribution
It is equivalent.
But because the uniformity of Distribution of Magnetic Field, the unbalanced of system vacuum distribution, flexible parent metal internal gas, moisture are released
The influence of factor such as put so that target surface ion concentration is unbalanced, so as to have influence on sputtering degree, causes sputtering sedimentation Density Distribution
Inequality, eventually affect the uniformity of substrate surface plated film thicknesses of layers.
The content of the invention
For overcome the deficiencies in the prior art, present technology provides a kind of the soft of controllable horizontal each point sputtering degree uniformity
Property magnetron sputtering plating horizontal homogeneity control device.
The technical scheme that this technology is taken is：A kind of flexible magnetron sputtering plating horizontal homogeneity control device, including spray
Mouth row, magnetron sputtering degree monitoring probe, magnetron sputtering degree analyzing comparison means, valve opening control device, electrically operated valve,
Gas pressure stable-pressure device, gas source, the nozzle row are provided with gas nozzle, and the magnetron sputtering degree monitoring probe has
Multiple, for the sputtering degree of detection gas nozzle, magnetron sputtering degree monitoring probe is by shielding electric signal output line and magnetic
Control sputtering degree analyzing comparison means input is connected, and the output end of magnetron sputtering degree analyzing comparison means is by shielding electricity
Output line is connected with valve opening control device, and valve opening control device is used for the opening and closing degree for controlling electrically operated valve,
Individually be provided with electrically operated valve on each gas nozzle, gas source by stainless steel tube successively with gas pressure stable-pressure device,
Electrically operated valve, gas nozzle are connected.
As the preferable technical scheme of this technology, the distance between described upper adjacent gas nozzle of nozzle row is less than 500mm.
As the preferable technical scheme of this technology, the distance between described magnetron sputtering degree monitoring probe is less than 500mm.
This technology flexibility magnetron sputtering plating horizontal homogeneity control device can control horizontal each point sputtering degree consistent, from
And corresponding points gas distribution density is controlled, reach the purpose for controlling horizontal respective points deposition so that horizontal each point film properties
Index uniformity.The upper each gas nozzle of nozzle row can be adjusted in real time according to horizontal each point uniform distribution situation in this technology
Nozzle gas coming through flow, control sputtering degree.Because this technology flexibility magnetron sputtering plating horizontal homogeneity control device sprays
The more other types of devices nozzle closenesses of mouth row's top nozzle density are high, and space-consuming volume is few, can be by sputter coating target drone
Partial volume is done smaller, is advantageous to the diminution of overall space, saves the energy, reduces coating quality disturbing factor.
Brief description of the drawings
Fig. 1 is the structural representation of this technology.
The embodiment of this technology is furtherd elucidate below in conjunction with the accompanying drawings.
Embodiment
Embodiment 1
Referring to Fig. 1, this flexible magnetron sputtering plating horizontal homogeneity control device, including nozzle row 1, magnetron sputtering degree
Monitoring probe 2, magnetron sputtering degree analyzing comparison means 3, valve opening control device 4, electrically operated valve 5, gas pressure voltage stabilizing
Device 6, gas source 7, nozzle row is 30mm provided with the distance between multiple gas nozzles 8, adjacent gas nozzle 8, right
Vertical position is provided with multiple magnetron sputtering degree monitoring probe 2, and adjacent magnetron sputtering degree monitoring 2 spacing distances of probe are 60mm.
For the sputtering degree of detection gas nozzle 8, magnetron sputtering degree monitoring probe 2 is splashed by shielding electric signal output line with magnetic control
The input of range degree com-parison and analysis device 3 is connected, and the output end of magnetron sputtering degree analyzing comparison means 3 is by shielding telecommunications
Number output line is connected with valve opening control device 4, and valve opening control device 4 is used for the opening and closing degree for controlling electrically operated valve 5,
Electrically operated valve 5 individually is provided with each reaction gas nozzle 10 of working gas nozzle 9/, electrically operated valve 5 is respectively by valve opening
Control device 4 controls, interference-free each other, gas source 7 by stainless steel tube successively with gas pressure stable-pressure device 6, electricity
Movable valve 5, gas nozzle 8 are connected.
During work, the interior gas stored of gas source 7 is after the voltage stabilizing of gas pressure stable-pressure device 6 through electrically operated valve 5 by gas
Body nozzle 8 sprays, and magnetron sputtering degree monitoring probe 2 measures the sputtering degree of each nozzle and transfers data to magnetron sputtering
The splash degree of each nozzle is compared by degree analyzing comparison means 3, magnetron sputtering degree analyzing comparison means 3, and will
Data send valve opening control device 4 to, and valve opening control device 4 controls the electrically operated valve on the big nozzle of splash degree
5 opening and closing degree diminish so that the splash degree of the nozzle diminishes；Control the opening and closing degree of electrically operated valve 5 on the small nozzle of splash degree
Become big so that the splash degree of the nozzle becomes big.
To the transparent conductive film sprayed with this flexible magnetron sputtering plating horizontal homogeneity control device, 4 points of spies are used
Dial impedance test device, determine magnetron sputtering transparent conductive film plane of structure resistance.It the results are shown in Table 1.As can be seen that with this flexibility
Plated film its surface uniformity that magnetron sputtering plating horizontal homogeneity control device sprays to obtain is good.
Table 1, face distribution of impedance uniformity test statistics
Claims (3)
1. a kind of flexible magnetron sputtering plating horizontal homogeneity control device, including nozzle is arranged, the monitoring of magnetron sputtering degree is popped one's head in,
Magnetron sputtering degree analyzing comparison means, valve opening control device, electrically operated valve, gas pressure stable-pressure device, gas source,
Nozzle row is provided with gas nozzle, the magnetron sputtering degree monitor probe have it is multiple, for splashing for detection gas nozzle
Range degree, magnetron sputtering degree monitoring probe are inputted by shielding electric signal output line with magnetron sputtering degree analyzing comparison means
End is connected, and the output end of magnetron sputtering degree analyzing comparison means is filled by shielding electric signal output line with valve opening control
Put and be connected, valve opening control device is used for the opening and closing degree for controlling electrically operated valve, and electricity is individually provided with each gas nozzle
Movable valve, gas source are connected with gas pressure stable-pressure device, electrically operated valve, gas nozzle successively by pipeline.
2. flexible magnetron sputtering plating horizontal homogeneity control device according to claim 1, it is characterised in that：The spray
The distance between upper adjacent gas nozzle of mouth row is less than 500mm.
3. flexible magnetron sputtering plating horizontal homogeneity control device according to claim 1 or 2, it is characterised in that：Institute
State the distance between adjacent magnetron sputtering degree monitoring probe and be less than 500mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720624704.5U CN207016847U (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720624704.5U CN207016847U (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207016847U true CN207016847U (en) | 2018-02-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720624704.5U Expired - Fee Related CN207016847U (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
Country Status (1)
| Country | Link |
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| CN (1) | CN207016847U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106995916A (en) * | 2017-06-01 | 2017-08-01 | 南京沪友冶金机械制造有限公司 | Flexible magnetron sputtering plating horizontal homogeneity control device |
| CN110438463A (en) * | 2019-07-29 | 2019-11-12 | 光驰科技(上海)有限公司 | A kind of method and its coating apparatus solving coated product horizontal homogeneity |
-
2017
- 2017-06-01 CN CN201720624704.5U patent/CN207016847U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106995916A (en) * | 2017-06-01 | 2017-08-01 | 南京沪友冶金机械制造有限公司 | Flexible magnetron sputtering plating horizontal homogeneity control device |
| CN110438463A (en) * | 2019-07-29 | 2019-11-12 | 光驰科技(上海)有限公司 | A kind of method and its coating apparatus solving coated product horizontal homogeneity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180216 Termination date: 20180601 |