CN106995916A - Flexible magnetron sputtering plating horizontal homogeneity control device - Google Patents
Flexible magnetron sputtering plating horizontal homogeneity control device Download PDFInfo
- Publication number
- CN106995916A CN106995916A CN201710402880.9A CN201710402880A CN106995916A CN 106995916 A CN106995916 A CN 106995916A CN 201710402880 A CN201710402880 A CN 201710402880A CN 106995916 A CN106995916 A CN 106995916A
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- CN
- China
- Prior art keywords
- magnetron sputtering
- degree
- gas
- control device
- nozzle
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
This technology discloses a kind of flexible magnetron sputtering plating horizontal homogeneity control device, nozzle row is provided with gas nozzle, magnetron sputtering degree monitoring probe has multiple, sputtering degree for detecting gas nozzle, magnetron sputtering degree monitoring probe is connected by shielding electric signal output line with magnetron sputtering degree analyzing comparison means input, the output end of magnetron sputtering degree analyzing comparison means is connected by shielding electric signal output line with valve opening control device, valve opening control device is used for the opening and closing degree for controlling electrically operated valve, electrically operated valve is individually provided with each gas nozzle, gas source by stainless steel tube successively with gas pressure stable-pressure device, electrically operated valve, gas nozzle is connected.This technology device can control horizontal each point sputtering degree consistent, so as to control corresponding points gas distribution density, reach the purpose of the horizontal respective points deposition of control so that horizontal each point film properties index uniformity.
Description
Technical field
This technology is related to a kind of flexible magnetron sputtering plating horizontal homogeneity control device, belongs to magnetron sputtering technology
Field.
Background technology
Principle of magnetron-sputtering is to be collided during electronics accelerates to fly to substrate in the presence of electric field with ar atmo,
Substantial amounts of argon ion and electronics are ionized out, electronics flies to substrate, and argon ion accelerates to bombard target in the presence of electric field, sputtered
Substantial amounts of target atom, in neutral target atom（Or molecule）It is deposited on film forming on substrate.
The working gas system of conventional magnetron sputter coating, by working gas storage tank, gas pressure stabilizer group and valve
Line up.Working gas is by the way that, again by valve dispatch gas, manostat control output gas gross pressure is steady after manostat
Fixed, the unit interval total gas flow rate of output is fixed.Advantage is that equipment is simple, low cost.Have the disadvantage target surface sputtering degree by
The influences such as system vacuum stabilization.
Manual flow controller is added in magnetron sputtering coating system later, its working gas is supplied by a valve row
Gas, gas flow is adjusted by manual flow controller, to solve because of vacuum system stability influence to the consistent of sputtering degree
Property.But have the disadvantage, the reaction speed controlled manually is not as good as pace of change impacted in vacuum chamber.Control influences delayed, precision
It is low.
Present many using plasma radiation monitoring systems（PEM）, for substituting manual adjustment work gas flow, to solve
Certainly magnetron sputtering reaction speed, solves the stability and uniformity of sputtering degree.
In vacuum coating reactive sputtering process, the spectral line position of the emission spectrum from vacuum coating discharge plasma
Put, depending on the composition of vacuum coating target, vacuum coating gas componant and vacuum coating compound.According to this vacuum coating
Discharge plasma intensity of emission spectra change can for control vacuum coating reactive sputtering technical process.Vacuum Deposition
The emission spectrum of film plasma is transferred to vacuum coating by the parallel light tube in vacuum coating sputtering chamber, fibre system and sputtered
Outdoor filter, then PEM controllers are input to by photomultiplier, prime amplifier, and compared with intensity settings point, so
After output signals on piezo electric valve, manipulate piezo electric valve open and close, with control input to vacuum coating sputtering house vacuum
The flow of plated film reacting gas.Because the poisoning of vacuum coating target is very fast, so the reaction speed of this piezo electric valve must be with
Chemical time（-1ms）In same magnitude.Using the method for above-mentioned PEM closed-loop control, vacuum coating can be sputtered
State maintains any one operating point on lag loop.Especially for vacuum coating reactive sputter-deposition TiO2、SnO2With
ITO vacuum coating films, its technique for vacuum coating stability is substantially improved.But, it can not solve horizontal each point and splash
The control of the extent of reaction is penetrated, control can not be played for the uniformity controlling of the indexs such as horizontal film thickness, face impedance and light transmission
Make and use.
Horizontal each point gas flow is not quite similar, but effect --- and sputtering point gas flow target surface obtains plasma density's distribution
It is equivalent
But uniformity, the unbalanced of system vacuum distribution, flexible parent metal internal gas, water release due to Distribution of Magnetic Field etc.
The influence of factor so that target surface ion concentration is unbalanced, so as to have influence on sputtering degree, causes sputtering sedimentation Density Distribution not
, the uniformity of substrate surface plated film thicknesses of layers is eventually affected.
The content of the invention
To overcome the deficiencies in the prior art, present technology provides a kind of the soft of controllable horizontal each point sputtering degree uniformity
Property magnetron sputtering plating horizontal homogeneity control device.
The technical scheme that this technology is taken is：A kind of flexible magnetron sputtering plating horizontal homogeneity control device, including spray
Mouth row, magnetron sputtering degree monitoring probe, magnetron sputtering degree analyzing comparison means, valve opening control device, electrically operated valve,
Gas pressure stable-pressure device, gas source, the nozzle row are provided with gas nozzle, and the magnetron sputtering degree monitoring probe has
It is multiple, the sputtering degree for detecting gas nozzle, magnetron sputtering degree monitoring probe is by shielding electric signal output line and magnetic
Control sputtering degree analyzing comparison means input is connected, and the output end of magnetron sputtering degree analyzing comparison means is by shielding electricity
Output line is connected with valve opening control device, and valve opening control device is used for the opening and closing degree for controlling electrically operated valve,
Individually be provided with electrically operated valve on each gas nozzle, gas source by stainless steel tube successively with gas pressure stable-pressure device,
Electrically operated valve, gas nozzle are connected.
As the preferred technical scheme of this technology, the distance between described upper adjacent gas nozzle of nozzle row is less than 500mm.
As the preferred technical scheme of this technology, the distance between described magnetron sputtering degree monitoring probe is less than 500mm.
This technology flexibility magnetron sputtering plating horizontal homogeneity control device can control horizontal each point sputtering degree consistent, from
And corresponding points gas distribution density is controlled, reach the purpose of the horizontal respective points deposition of control so that horizontal each point film properties
Index uniformity.Each upper gas nozzle of nozzle row can in real time be adjusted according to horizontal each point uniform distribution situation in this technology
Nozzle gas coming through flow, controls sputtering degree.Due to the flexible magnetron sputtering plating horizontal homogeneity control device spray of this technology
The more other types of devices nozzle closenesses of mouth row's top nozzle density are high, and space-consuming volume is few, can be by sputter coating target drone
It is smaller that partial volume is done, and is conducive to the diminution of overall space, saves the energy, reduces coating quality disturbing factor.
Brief description of the drawings
Fig. 1 is the structural representation of this technology.
The embodiment to this technology is further elucidated below in conjunction with the accompanying drawings.
Embodiment
Embodiment 1
Referring to Fig. 1, this flexible magnetron sputtering plating horizontal homogeneity control device, including nozzle row 1, the monitoring of magnetron sputtering degree
Probe 2, magnetron sputtering degree analyzing comparison means 3, valve opening control device 4, electrically operated valve 5, gas pressure stable-pressure device
6th, gas source 7, nozzle row is provided with multiple gas nozzles 8, and the distance between adjacent gas nozzle 8 is 30mm, and oppose position
Multiple magnetron sputtering degree monitoring probes 2 are installed, adjacent magnetron sputtering degree monitoring 2 spacing distances of probe are 60mm.For
The sputtering degree of gas nozzle 8 is detected, magnetron sputtering degree monitoring probe 2 is by shielding electric signal output line and magnetron sputtering journey
The input of degree com-parison and analysis device 3 is connected, and the output end of magnetron sputtering degree analyzing comparison means 3 is defeated by shielding electric signal
Outlet is connected with valve opening control device 4, and valve opening control device 4 is used for the opening and closing degree for controlling electrically operated valve 5, each
Electrically operated valve 5 is individually provided with the reaction gas nozzle 10 of working gas nozzle 9/, electrically operated valve 5 is respectively by valve opening control
Device 4 is controlled, interference-free each other, gas source 7 by stainless steel tube successively with gas pressure stable-pressure device 6, motor-driven valve
Door 5, gas nozzle 8 are connected.
During work, the gas stored in gas source 7 is after the voltage stabilizing of gas pressure stable-pressure device 6 through electrically operated valve 5 by gas
Body nozzle 8 sprays, and magnetron sputtering degree monitoring probe 2 measures the sputtering degree of each nozzle and transfers data to magnetron sputtering
The splash degree of each nozzle is compared by degree analyzing comparison means 3, magnetron sputtering degree analyzing comparison means 3, and will
Data send the electrically operated valve on valve opening control device 4, the big nozzle of the control of valve opening control device 4 splash degree to
5 opening and closing degree diminish so that the splash degree of the nozzle diminishes；Control the opening and closing degree of electrically operated valve 5 on the small nozzle of splash degree
Become big so that the splash degree of the nozzle becomes big.
To the transparent conductive film sprayed with this flexible magnetron sputtering plating horizontal homogeneity control device, 4 points of spies are used
Dial impedance test device, determines magnetron sputtering transparent conductive film plane of structure resistance.It the results are shown in Table 1.As can be seen that with this flexibility
Plated film its surface uniformity that the spraying of magnetron sputtering plating horizontal homogeneity control device is obtained is good.
Table 1, face distribution of impedance uniformity test statistics
Claims (3)
1. a kind of flexible magnetron sputtering plating horizontal homogeneity control device, including nozzle is arranged, the monitoring of magnetron sputtering degree is popped one's head in,
Magnetron sputtering degree analyzing comparison means, valve opening control device, electrically operated valve, gas pressure stable-pressure device, gas source,
The nozzle row is provided with gas nozzle, and the magnetron sputtering degree monitoring probe has multiple, for detecting splashing for gas nozzle
Range degree, magnetron sputtering degree monitoring probe is inputted by shielding electric signal output line with magnetron sputtering degree analyzing comparison means
End is connected, and the output end of magnetron sputtering degree analyzing comparison means controls to fill by shielding electric signal output line and valve opening
Put and be connected, valve opening control device is used on the opening and closing degree for controlling electrically operated valve, each gas nozzle individually provided with electricity
Movable valve, gas source is connected with gas pressure stable-pressure device, electrically operated valve, gas nozzle successively by pipeline.
2. flexible magnetron sputtering plating horizontal homogeneity control device according to claim 1, it is characterised in that：The spray
The distance between upper adjacent gas nozzle of mouth row is less than 500mm.
3. flexible magnetron sputtering plating horizontal homogeneity control device according to claim 1 or 2, it is characterised in that：Institute
State the distance between adjacent magnetron sputtering degree monitoring probe and be less than 500mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402880.9A CN106995916A (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402880.9A CN106995916A (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
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| Publication Number | Publication Date |
|---|---|
| CN106995916A true CN106995916A (en) | 2017-08-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710402880.9A Pending CN106995916A (en) | 2017-06-01 | 2017-06-01 | Flexible magnetron sputtering plating horizontal homogeneity control device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989047A (en) * | 2019-02-26 | 2019-07-09 | 佛山市佛欣真空技术有限公司 | One kind setting system based on vacuum coating Flow Measurement Display Meter Multi-path synchronous ratio |
| CN113061857A (en) * | 2021-03-12 | 2021-07-02 | 浙江艾微普科技有限公司 | Method and equipment for depositing film by ion-assisted, inclined sputtering and reactive sputtering |
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| CN1491293A (en) * | 2001-02-07 | 2004-04-21 | ������������ʽ���� | Spatter device and spatter film forming method |
| CN101289738A (en) * | 2008-03-26 | 2008-10-22 | 上海北玻镀膜技术工业有限公司 | Film thickness correcting process and system for magnetron sputtering coating |
| CN201305626Y (en) * | 2009-03-11 | 2009-09-09 | 深圳市三鑫精美特玻璃有限公司 | The device of monitoring target surface state |
| CN204125528U (en) * | 2014-11-13 | 2015-01-28 | 昆山工研院新型平板显示技术中心有限公司 | The equipment of magnetron sputtering metal oxide |
| CN104404466A (en) * | 2014-12-26 | 2015-03-11 | 合肥京东方光电科技有限公司 | Magnetron sputtering coating method and system |
| CN106783667A (en) * | 2017-02-23 | 2017-05-31 | 浙江尚越新能源开发有限公司 | Ensure the production system and its manufacture method of uniformity and the alkali doped of stability in flexible copper indium gallium selenide thin-film solar cell |
| CN207016847U (en) * | 2017-06-01 | 2018-02-16 | 南京沪友冶金机械制造有限公司 | Flexible magnetron sputtering plating horizontal homogeneity control device |
-
2017
- 2017-06-01 CN CN201710402880.9A patent/CN106995916A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1491293A (en) * | 2001-02-07 | 2004-04-21 | ������������ʽ���� | Spatter device and spatter film forming method |
| CN101289738A (en) * | 2008-03-26 | 2008-10-22 | 上海北玻镀膜技术工业有限公司 | Film thickness correcting process and system for magnetron sputtering coating |
| CN201305626Y (en) * | 2009-03-11 | 2009-09-09 | 深圳市三鑫精美特玻璃有限公司 | The device of monitoring target surface state |
| CN204125528U (en) * | 2014-11-13 | 2015-01-28 | 昆山工研院新型平板显示技术中心有限公司 | The equipment of magnetron sputtering metal oxide |
| CN104404466A (en) * | 2014-12-26 | 2015-03-11 | 合肥京东方光电科技有限公司 | Magnetron sputtering coating method and system |
| CN106783667A (en) * | 2017-02-23 | 2017-05-31 | 浙江尚越新能源开发有限公司 | Ensure the production system and its manufacture method of uniformity and the alkali doped of stability in flexible copper indium gallium selenide thin-film solar cell |
| CN207016847U (en) * | 2017-06-01 | 2018-02-16 | 南京沪友冶金机械制造有限公司 | Flexible magnetron sputtering plating horizontal homogeneity control device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989047A (en) * | 2019-02-26 | 2019-07-09 | 佛山市佛欣真空技术有限公司 | One kind setting system based on vacuum coating Flow Measurement Display Meter Multi-path synchronous ratio |
| CN113061857A (en) * | 2021-03-12 | 2021-07-02 | 浙江艾微普科技有限公司 | Method and equipment for depositing film by ion-assisted, inclined sputtering and reactive sputtering |
| CN113061857B (en) * | 2021-03-12 | 2023-01-13 | 浙江艾微普科技有限公司 | Method and equipment for depositing film by ion-assisted, inclined sputtering and reactive sputtering |
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Application publication date: 20170801 |