CN103031527A - Magnetron sputtering coating device - Google Patents
Magnetron sputtering coating device Download PDFInfo
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- CN103031527A CN103031527A CN2011102917717A CN201110291771A CN103031527A CN 103031527 A CN103031527 A CN 103031527A CN 2011102917717 A CN2011102917717 A CN 2011102917717A CN 201110291771 A CN201110291771 A CN 201110291771A CN 103031527 A CN103031527 A CN 103031527A
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- gas
- reaction chamber
- target
- magnetic control
- plating device
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Abstract
The invention relates to a magnetron sputtering coating device, which comprises a reaction chamber, a rotating stand located at the center of the reaction chamber, and at least one target material detachably disposed between a reaction chamber wall and the rotating stand. The magnetron sputtering coating device also includes two gas channels communicated with the reaction chamber. Each gas channel is provided with air outlets, the air outlets of one of the gas channels is disposed near the target material, and the air outlets of the other gas channel are arranged around the rotating stand. The magnetron sputtering coating device provided in the invention can effectively avoid the target "poisoning".
Description
Technical field
The present invention relates to a kind of magnetic control sputtering film plating device.
Background technology
In magnetron sputtering technology, the design of the air feed of working gas and reactant gases plays a part very crucial to quality of forming film and the membrane uniformity of film coating apparatus.During existing PVD equipment deposit film, working gas (such as argon gas) and reactant gases (such as in oxygen, nitrogen, the acetylene etc. one or more) enter in the mixed gas tank and mix, then enter in the reaction chamber of PVD equipment by airway, export near the target finally by escape pipe.Open the power supply of target, target produces glow discharge, and the bombardment target produces target ion or atom after the working gas ionization, and target ion or atom are in the base material moving process, with the reactant gases reaction and be deposited on the base material.
The effect of working gas is to pound target ion or atom after the ionization; And reactant gases is mainly used to the target ion that sputters out or atomic reaction and is deposited on the base material.Working gas and reactant gases export near the target after mixing simultaneously, and when working gas was more, the target atom and the ion that sputter were more, and the reaction gas physical efficiency is fallen by completely consumed.But along with increasing of reactant gases, the part reactant gases will be adsorbed on the target material surface, with the target direct reaction, thereby forms one deck compound at target material surface, causes target " poisoning ".Target " poisoning " has disadvantageous effect to the PVD processing procedure: on the one hand, intoxicating phenomenon causes the sputtering raste of target to decline to a great extent, the thin film deposition Speed Reduction, and the film adhesion that deposits on the base material is poor; On the other hand, target very easily causes the substrate surface film heterochromatic, and then causes whole stove coated product to be scrapped after poisoning, and loss greatly.
Summary of the invention
In view of this, provide a kind of magnetic control sputtering film plating device that can effectively avoid target " poisoning ".
A kind of magnetic control sputtering film plating device, it comprises a reaction chamber, at a pivoted frame of reaction chamber central authorities and be removable installed at least one target between reaction chamber wall and the pivoted frame, this magnetic control sputtering film plating device also comprises the two gas gas circuits that are communicated with reaction chamber, each gas gas circuit is provided with escape pipe, offer production well on the escape pipe, and wherein the production well of a gas gas circuit is near the target setting, and the production well of another gas gas circuit is near the pivoted frame setting.
Magnetic control sputtering film plating device of the present invention is provided with independently working gas gas circuit and reactant gases gas circuit, the production well of working gas gas circuit is near the target setting, the production well of reactant gases gas circuit be arranged at pivoted frame around, even so the passing in the very large situation of flow of reactant gases, also can avoid reactant gases and target material surface to react the target intoxicating phenomenon that causes.In addition, this magnetic control sputtering film plating device can effectively be uniformly distributed in working gas around the target, and reactant gases is evenly distributed near the base material, can significantly improve thickness evenness and the aberration homogeneity of institute's coatings.
Description of drawings
Fig. 1 is the schematic top plan view of the magnetic control sputtering film plating device of a preferred embodiment of the present invention;
Fig. 2 is the synoptic diagram of escape pipe of the magnetic control sputtering film plating device of a preferred embodiment of the present invention.
The main element nomenclature
| Magnetic control sputtering film plating device | 100 |
| Reaction chamber | 30 |
| Target | 40 |
| Pivoted frame | 60 |
| The working gas gas circuit | 10 |
| The first airway | 11 |
| The first take- |
12 |
| The |
13 |
| The reactant gases gas circuit | 20 |
| The second airway | 21 |
| The second take-off pipe | 22 |
| The second escape pipe | 23 |
| Mixed gas tank | 24 |
| |
131 |
| |
135 |
| Production well | 133 |
| |
137 |
| Base material | 70 |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 1, magnetic control sputtering film plating device 100 of the present invention, it comprises a reaction chamber 30, is arranged at least one target 40 and pivoted frame 60 in the reaction chamber 30, and the working gas gas circuit 10 and the reactant gases gas circuit 20 that are communicated with reaction chamber 30.In the present embodiment, the quantity of target 40 is two.
This pivoted frame 60 is arranged on the central authorities of reaction chamber 30, in order to load base material 70.This at least one target 40 is removable installed between the chamber wall and pivoted frame 60 of reaction chamber 30, and the diapire of vertical described reaction chamber 30.These at least one target 40 preferred cylindrical targets, but be not limited to cylindrical target.
Working gas gas circuit 10 comprises one first airway 11, some the first take-off pipes 12 and some the first escape pipes 13.In the present embodiment, the quantity of the first take-off pipe 12 and the first escape pipe 13 is four.The chamber wall that this first airway 11 passes reaction chamber 30 enters into the inside of reaction chamber 30, and this first airway 11 is communicated with described some the first take-off pipes 12 respectively again in reaction chamber 30.
These some first escape pipes 13 are positioned at reaction chamber 30, and each first escape pipe 13 is communicated with an end of one first take-off pipe 12.One end of each the first escape pipe 13 can vertically be fixed on the diapire or roof of reaction chamber 30 by welding or other fixed forms.The first escape pipe 13 correspondences are arranged at the both sides of each target 40, and in order not affect the sputter of target 40 in the coating process, described the first escape pipe 13 can not be over against the sputter face setting of target 40.Each first escape pipe 13 is parallel with described target 40.
See also Fig. 2, each first escape pipe 13 comprises a main body tube 131 and a baffle plate 135.This main body tube 131 is cylindrical tube, and the one end is communicated with one first take-off pipe 12, the other end sealing of main body tube 131.Offer some production wells 133 on the tube wall of this main body tube 131, these some production wells 133 are vertically evenly distributed along tube wall.These some production wells 133 are over against described target 40.The side that this main body tube 131 is provided with production well 133 connects described baffle plate 135 by a union lever 137.This baffle plate 135 is arch, and the cross section concentric of the cross section of main body tube 131 and baffle plate 135.The baffle plate 135 of the first escape pipe 13 can delay the time that working gas arrives target 40, thereby the direct target 40 that arrives causes the local uneven of sputter after avoiding working gas to derive from production well 133.
Reactant gases gas circuit 20 comprises a mixed gas tank 24, one second airway 21, some the second take-off pipes 22 and some the second escape pipes 23.This mixed gas tank 24 is arranged at the outside of reaction chamber 30 and is communicated with the second airway 21, and when reactant gases had two or more, this mixed gas tank 24 was used for reactant gases is mixed.The chamber wall that this second airway 21 passes reaction chamber 30 enters into the inside of reaction chamber 30.These some second take-off pipes 22 are communicated with the end of described the second airway 21 respectively.In the present embodiment, the quantity of the second take-off pipe 22 and the second escape pipe 23 is two.
These some second escape pipes 23 are positioned at reaction chamber 30, and each second escape pipe 23 is communicated with an end of one second take-off pipe 22.The structure of the second escape pipe 23 is identical with the structure of described the first escape pipe 13, and this second escape pipe 23 also comprises main body tube and baffle plate.The second escape pipe 23 is close to pivoted frame 60 and arranges.Each target 40 correspondence arranges the second escape pipe 23 of at least one derivation reactant gases.The location optimization of the production well of this second escape pipe 23 is over against described pivoted frame 60.But the baffle plate delayed response gas of the second escape pipe 23 arrives the time of the base material 70 on the pivoted frame 60, and reactant gases is evenly distributed near the base material 70, can significantly improve thickness evenness and the aberration homogeneity of institute's coatings.
So, working gas can be to bombard target 40 near the first airway 11, some the first take-off pipes 12, some the first escape pipes 13 arrive target 40.
So, reactant gases can be near the base material 70 that mixed gas tank 24, the second airway 21, some the second take-off pipes 22, some the second escape pipes 23 arrive on the pivoted frames 60, with target ion or atomic reaction and be deposited on the base material 70.
Described the first airway 11, the first take-off pipe 12, the second airway 21 and the second take-off pipe 22 are bent metal tube.The first airway 11, the first take-off pipe 12, the second airway 21 and the second take-off pipe 22 are not limited to structure shown in Figure 1 and set-up mode, can adjust according to actual needs its set-up mode in reaction chamber 30, as long as guarantee gas can be imported in the escape pipe.
Magnetic control sputtering film plating device 100 of the present invention is provided with independently working gas gas circuit 10 and reactant gases gas circuit 20, the production well 133 of the first escape pipe 13 of working gas gas circuit 10 arranges near target 40, the production well of the second escape pipe 23 of reactant gases gas circuit 20 arranges near pivoted frame 60, even so pass in the very large situation of flow target 40 intoxicating phenomenons that also can avoid reactant gases and target 40 surface reactions to cause at reactant gases.In addition, this magnetic control sputtering film plating device 100 can make working gas be uniformly distributed in around the target 40, and reactant gases is evenly distributed near the base material 70, can significantly improve thickness evenness and the aberration homogeneity of institute's coatings.
Claims (9)
1. magnetic control sputtering film plating device, it comprises a reaction chamber, at a pivoted frame of reaction chamber central authorities and be removable installed at least one target between reaction chamber wall and the pivoted frame, it is characterized in that: this magnetic control sputtering film plating device also comprises the two gas gas circuits that are communicated with reaction chamber, each gas gas circuit is provided with escape pipe, offer production well on the escape pipe, and wherein the production well of a gas gas circuit is near the target setting, and the production well of another gas gas circuit is near the pivoted frame setting.
2. magnetic control sputtering film plating device as claimed in claim 1 is characterized in that: production well near the gas gas circuit of target setting in order to deriving working gas, production well near the gas gas circuit of pivoted frame setting in order to derive reactant gases.
3. magnetic control sputtering film plating device as claimed in claim 2, it is characterized in that: described each gas gas circuit comprises an airway, some take-off pipes and some escape pipes, the chamber wall that this airway passes reaction chamber enters into the inside of reaction chamber, and this airway is connected with described some take-off pipes respectively in reaction chamber, and the corresponding escape pipe that is communicated with of each take-off pipe.
4. magnetic control sputtering film plating device as claimed in claim 3, it is characterized in that: described each escape pipe comprises a main body tube and a baffle plate, an end of this main body tube is communicated with a take-off pipe, the other end sealing; And these some production wells are opened on the tube wall of main body tube, and these some production wells are along the longitudinal arrangement of tube wall, and the side correspondence that this main body tube is provided with production well is connected with described baffle plate.
5. magnetic control sputtering film plating device as claimed in claim 4, it is characterized in that: this baffle plate is arch, and this main body tube is connected by a union lever with baffle plate.
6. magnetic control sputtering film plating device as claimed in claim 3, it is characterized in that: an end of described escape pipe vertically is fixed on the diapire or roof of reaction chamber.
7. magnetic control sputtering film plating device as claimed in claim 3 is characterized in that: the escape pipe of deriving working gas is arranged at the both sides of each target and parallel with described target, derives the production well of escape pipe of working gas over against target.
8. magnetic control sputtering film plating device as claimed in claim 3 is characterized in that: derive each escape pipe of reactant gases near setting around the pivoted frame and over against target.
9. magnetic control sputtering film plating device as claimed in claim 2, it is characterized in that: in order to derive the gas gas circuit of reactant gases, its outside in reaction chamber also is provided with a mixed gas tank that is communicated with airway.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102917717A CN103031527A (en) | 2011-09-30 | 2011-09-30 | Magnetron sputtering coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102917717A CN103031527A (en) | 2011-09-30 | 2011-09-30 | Magnetron sputtering coating device |
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| Publication Number | Publication Date |
|---|---|
| CN103031527A true CN103031527A (en) | 2013-04-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102917717A Pending CN103031527A (en) | 2011-09-30 | 2011-09-30 | Magnetron sputtering coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103031527A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109321889A (en) * | 2018-11-12 | 2019-02-12 | 华灿光电（浙江）有限公司 | Magnetic control sputtering device |
| CN111074240A (en) * | 2020-02-11 | 2020-04-28 | 沧州天瑞星光热技术有限公司 | Gas path arrangement method for improving vacuum coating atmosphere uniformity |
| CN114672775A (en) * | 2020-12-24 | 2022-06-28 | 中国科学院微电子研究所 | Sputtering device and wafer coating method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105700A (en) * | 1987-08-18 | 1988-03-30 | 浙江大学 | The aerator that sputtering source is used |
| CN2443972Y (en) * | 2000-08-18 | 2001-08-22 | 深圳威士达真空系统工程有限公司 | Air feeding device of reacted gas in equipment for intermediate frequency sputter coating reaction |
| JP2006176823A (en) * | 2004-12-22 | 2006-07-06 | Ulvac Japan Ltd | Film deposition system |
| CN1844448A (en) * | 2005-04-08 | 2006-10-11 | 北京实力源科技开发有限责任公司 | Magnetron sputtering target with on-line cleaning function and its application method |
| CN101768727A (en) * | 2009-12-31 | 2010-07-07 | 中国地质大学（北京） | Complex vacuum deposition device |
-
2011
- 2011-09-30 CN CN2011102917717A patent/CN103031527A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105700A (en) * | 1987-08-18 | 1988-03-30 | 浙江大学 | The aerator that sputtering source is used |
| CN2443972Y (en) * | 2000-08-18 | 2001-08-22 | 深圳威士达真空系统工程有限公司 | Air feeding device of reacted gas in equipment for intermediate frequency sputter coating reaction |
| JP2006176823A (en) * | 2004-12-22 | 2006-07-06 | Ulvac Japan Ltd | Film deposition system |
| CN1844448A (en) * | 2005-04-08 | 2006-10-11 | 北京实力源科技开发有限责任公司 | Magnetron sputtering target with on-line cleaning function and its application method |
| CN101768727A (en) * | 2009-12-31 | 2010-07-07 | 中国地质大学（北京） | Complex vacuum deposition device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109321889A (en) * | 2018-11-12 | 2019-02-12 | 华灿光电（浙江）有限公司 | Magnetic control sputtering device |
| CN111074240A (en) * | 2020-02-11 | 2020-04-28 | 沧州天瑞星光热技术有限公司 | Gas path arrangement method for improving vacuum coating atmosphere uniformity |
| CN114672775A (en) * | 2020-12-24 | 2022-06-28 | 中国科学院微电子研究所 | Sputtering device and wafer coating method |
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Application publication date: 20130410 |