CN201305626Y - The device of monitoring target surface state - Google Patents

The device of monitoring target surface state Download PDF

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Publication number
CN201305626Y
CN201305626Y CNU2009201351940U CN200920135194U CN201305626Y CN 201305626 Y CN201305626 Y CN 201305626Y CN U2009201351940 U CNU2009201351940 U CN U2009201351940U CN 200920135194 U CN200920135194 U CN 200920135194U CN 201305626 Y CN201305626 Y CN 201305626Y
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CN
China
Prior art keywords
target surface
surface state
tracheae
monitoring
sputtering cathode
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Expired - Fee Related
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CNU2009201351940U
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Chinese (zh)
Inventor
徐日宏
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SHENZHEN SANXIN JMT GLASS CO Ltd
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SHENZHEN SANXIN JMT GLASS CO Ltd
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Priority to CNU2009201351940U priority Critical patent/CN201305626Y/en
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Publication of CN201305626Y publication Critical patent/CN201305626Y/en
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Abstract

The utility model relates to a kind of magnetron sputtering cathode target surface state monitoring device.The utility model has made up a kind of device of monitoring the target surface state, comprise the fibre system, photomultiplier cell, the magnetic control sputtering cathode that detect the plasma surface light intensity, also comprise the plasma spectrum supervisory system of monitoring cathode target surface state and the gas control system of control reactant gases, described plasma spectrum supervisory system is sent the instruction control reaction gas flow according to the supervisory signal of fibre system transmission to gas control system.The utility model can the more accurate flow of pilot-gas more in time, makes coating process more stable.

Description

The device of monitoring target surface state
Technical field
The utility model relates to a kind of plated film target surface monitoring device, relates in particular to a kind of device that the magnetron sputtering plating target surface is monitored.
Background technology
Nowadays coated glass has been widely used in touch-screen field and field of liquid crystal display, and the glass coating technology is also maked rapid progress.Magnetron sputtering plating is widely used in glass coating, and is particularly industrial at the large-area glass plated film, is main plated film mode.But, in the magnetron sputtering technology, control reactive sputtering, will control flow rate of reactive gas.Control mode commonly used has " poison mode ", voltage control etc.And the large-area glass plated film is very high to the uniformity requirement of rete, and especially high-end product is as the high saturating ito glass of touch-screen, and the other side's resistance, transmitance, aberration etc. all require large-area even." poison mode " reactive sputtering speed is very low down, is unsuitable for the volume production of multilayer film.And voltage control also just cooperates scale-of-two to design to such an extent that gas distribution mode single-point is controlled the target surface state, for the large size coated glass, obviously can not realize whole homogeneity.
The utility model content
The technical problem that the utility model solves is: overcome in the existing magnetron sputtering technology, cause the plated film of coated glass inhomogeneous thereby can not accurately control flow rate of reactive gas, particularly the uneven technical problem of large size coated glass plated film.
The technical scheme of the technical solution problem that the utility model provides is: make up a kind of device of monitoring the target surface state, comprise the fibre system, photomultiplier cell, the magnetic control sputtering cathode that detect the plasma surface light intensity, plasma spectrum monitoring (the Plasma EmissionMonitor that also comprises monitoring plated film target surface state, abbreviation PEM) gas control system of system and control reactant gases, described plasma spectrum supervisory system is sent the aperture of instruction control piezo electric valve according to the supervisory signal of fibre system transmission to gas control system, thereby controls reaction gas flow.
The further technical scheme of the utility model technical solution problem is: described plasma spectrum supervisory system comprises information receiving module and message processing module, the information of the plasma surface light intensity that the next fibre system of photomultiplier cell transmission that receives described information receiving module detects, described message processing module carries out analyzing and processing to the information that described information receiving module receives.
The further technical scheme of the utility model technical solution problem is: the tracheae of described gas control system is a binary distributed, and the tracheae of described binary distributed is controlled respectively at magnetic control sputtering cathode end and middle portion.
The further technical scheme of the utility model technical solution problem is: described control magnetic control sputtering cathode device terminal and the middle portion tracheae is the piezoelectricity valve.
The further technical scheme of the utility model technical solution problem is: the tracheae of described magnetic control sputtering cathode middle portion is distributed as multilayer.
The further technical scheme of the utility model technical solution problem is: described multilayer tracheae is distributed as binary distributed, and promptly the first layer is separated into 2 1Individual separate space is by 2 1Individual inlet pipe is air feed respectively, and the second layer is separated into 2 2Individual separate space is by 2 2Individual inlet pipe is air feed respectively, and the like, till meeting the gas control system needs.
The technique effect of technical solutions of the utility model is: by making up a kind of device of monitoring the target surface state, receive simulation by the information that the plasma spectrum supervisory system is set and receive the information that the next fibre system of photomultiplier cell transmission detects, message processing module by the plasma spectrum supervisory system carries out analyzing and processing, send instruction and carry out gas control to gas control system, thereby reach accurate pilot-gas flow, make coating process more stable.
Description of drawings
Fig. 1 is the utility model syndeton synoptic diagram.
Fig. 2 is the utility model plasma spectrum supervisory system modular structure synoptic diagram
Fig. 3 is the utility model tracheae distribution structural representation.
Embodiment
Below in conjunction with specific embodiment technical solutions of the utility model are further specified:
As shown in Figure 1, the utility model makes up a kind of device of monitoring the target surface state, comprise the fibre system 2, photomultiplier cell 3, the magnetic control sputtering cathode 1 that detect the plasma surface light intensity, also comprise the plasma spectrum supervisory system 4 of monitoring plated film target surface state and the gas control system 5 of control reactant gases, described plasma spectrum supervisory system 4 is sent the instruction control reaction gas flow according to the supervisory signal of fibre system 2 transmission to gas control system 5.
As depicted in figs. 1 and 2, fibre system 2 is transferred to plasma spectrum supervisory system 4 with the status information of magnetic control sputtering cathode 1 target surface that monitors after photomultiplier cell 3 amplifies, information receiving module 41 in the optical spectrum monitor system 4 receives photomultiplier cell 3 information transmitted, be transferred to message processing module 42 then, carry out analyzing and processing by message processing module 42, message processing module 42 compares according to analytical results and preset value, send steering order by comparative result to gas control system 5, the flow of pilot-gas.
As shown in Figure 3, the tracheae of described gas control system 5 is a bivariate distribution, and the tracheae of described bivariate distribution is controlled respectively at the terminal portions and the middle portion of magnetic control sputtering cathode 1.Described control magnetic control sputtering cathode device terminal and the middle portion tracheae is the piezoelectricity valve.Terminal portions at magnetic control sputtering cathode 1 is provided with a piezoelectricity valve respectively, the i.e. first piezoelectricity valve 51 and the 3rd piezoelectricity valve 53, an inlet pipe 54 of the first piezoelectricity valve, 51 control magnetic control sputtering cathodes, 1 end, another inlet pipe 54 of the 3rd piezo electric valve gate control magnetic control sputtering cathode 1 end, it is the second piezoelectricity valve 52 that magnetic control sputtering cathode 1 middle portion also is provided with a piezoelectricity valve, the inlet pipe 54 of the described second piezo electric valve gate control magnetic control sputtering cathode, 1 middle portion.The tracheae of described magnetic control sputtering cathode 1 middle portion is distributed as multilayer.
As shown in Figure 3, described multilayer tracheae is distributed as binary distributed, and promptly the first layer is separated into 2 1Individual separate space is by 2 1Individual inlet pipe is air feed respectively, and the second layer is separated into 2 2Individual separate space is by 2 2Individual inlet pipe is air feed respectively, and the like, till meeting the gas control system needs.
Because the utility model has adopted plasma spectrum supervisory system 4 to carry out the condition monitoring of magnetic control sputtering cathode 1 target surface, can more accurately control flow rate of reactive gas, simultaneously, on tracheae distributes, adopt the piezoelectricity valve to control the gas flow of magnetic control sputtering cathode 1 terminal portions and middle portion respectively, can control reactant gases better like this, make coating process stable more, even.
Above content be in conjunction with concrete preferred implementation to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection domain of the present utility model.

Claims (6)

1. device of monitoring the target surface state, comprise the fibre system, photomultiplier cell, the magnetic control sputtering cathode that detect the plasma surface light intensity, it is characterized in that: also comprise the plasma spectrum supervisory system of monitoring plated film target surface state and the gas control system of control reactant gases, described plasma spectrum supervisory system is sent the aperture of instruction control piezo electric valve according to the supervisory signal of fibre system transmission to gas control system, thereby controls reaction gas flow.
2, the device of monitoring target surface state according to claim 1, it is characterized in that, described plasma spectrum supervisory system comprises information receiving module and message processing module, the information of the plasma surface light intensity that the next fibre system of photomultiplier cell transmission that receives described information receiving module detects, described message processing module carries out analyzing and processing to the information that described information receiving module receives.
3, the device of monitoring target surface state according to claim 1 is characterized in that, the tracheae of described gas control system is a binary distributed, and the tracheae of described binary distributed is controlled respectively at magnetic control sputtering cathode end and middle portion.
4, the device of monitoring target surface state according to claim 3 is characterized in that, described control magnetic control sputtering cathode device terminal and the middle portion tracheae is the piezoelectricity valve.
5, the device of monitoring target surface state according to claim 3 is characterized in that, the tracheae of described magnetic control sputtering cathode middle portion is distributed as multilayer.
6, the device of monitoring target surface state according to claim 5 is characterized in that, described multilayer tracheae is distributed as binary distributed, and promptly the first layer is separated into 2 1Individual separate space is by 2 1Individual inlet pipe is air feed respectively, and the second layer is separated into 2 2Individual separate space is by 2 2Individual inlet pipe is air feed respectively, and the like, till meeting the gas control system needs.
CNU2009201351940U 2009-03-11 2009-03-11 The device of monitoring target surface state Expired - Fee Related CN201305626Y (en)

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Application Number Priority Date Filing Date Title
CNU2009201351940U CN201305626Y (en) 2009-03-11 2009-03-11 The device of monitoring target surface state

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102081408A (en) * 2009-11-30 2011-06-01 鸿富锦精密工业(深圳)有限公司 Ion concentration monitoring system
CN103866248A (en) * 2014-04-02 2014-06-18 广州市光机电技术研究院 Reactive sputtering plasma control system and method
CN106995916A (en) * 2017-06-01 2017-08-01 南京沪友冶金机械制造有限公司 Flexible magnetron sputtering plating horizontal homogeneity control device
CN109811326A (en) * 2019-01-17 2019-05-28 上海大学 Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102081408A (en) * 2009-11-30 2011-06-01 鸿富锦精密工业(深圳)有限公司 Ion concentration monitoring system
CN102081408B (en) * 2009-11-30 2013-11-06 鸿富锦精密工业(深圳)有限公司 Ion concentration monitoring system
CN103866248A (en) * 2014-04-02 2014-06-18 广州市光机电技术研究院 Reactive sputtering plasma control system and method
CN106995916A (en) * 2017-06-01 2017-08-01 南京沪友冶金机械制造有限公司 Flexible magnetron sputtering plating horizontal homogeneity control device
CN109811326A (en) * 2019-01-17 2019-05-28 上海大学 Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

Termination date: 20160311

CF01 Termination of patent right due to non-payment of annual fee