CN102628165A - Method for monitoring abnormity of film deposition process and system thereof - Google Patents
Method for monitoring abnormity of film deposition process and system thereof Download PDFInfo
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- CN102628165A CN102628165A CN2011101855747A CN201110185574A CN102628165A CN 102628165 A CN102628165 A CN 102628165A CN 2011101855747 A CN2011101855747 A CN 2011101855747A CN 201110185574 A CN201110185574 A CN 201110185574A CN 102628165 A CN102628165 A CN 102628165A
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Abstract
The invention discloses a method for monitoring abnormity of a film deposition process and a system thereof so as to determine whether the film deposition process of products is abnormal, further determine the film obtained by deposition is qualified, raise the accuracy of detection of bad products after film deposition, improve product qualified rate and prevent bad products from flowing into the market. The method comprises the following steps of: monitoring at real time during the film deposition process and acquiring mass spectrum information in a film deposition reaction chamber; generating mass spectrum information dynamic change information in dependence on the obtained mass spectrum information; comparing the mass spectrum information dynamic change information with mass spectrum information change information during the normal film deposition process and determining the film deposition process is abnormal or not.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the unusual method and system of a kind of monitoring film deposition process.
Background technology
At present; In the manufacturing processed of optoelectronic semiconductor and TFT (being thin film transistor); General CVD (the Chemical Vapor Deposition that adopts; Chemical vapour deposition) mode is carried out thin film deposition, nonmetal insulating protective layer etc., promptly feeds reaction chamber containing the gaseous reactant that constitutes the film element or the steam of liquid reactants and other assist gas that reacts required, in the process of substrate surface generation chemical reaction film former.Because PECVD (being plasma enhanced chemical vapor deposition) makes the ionization of gas that contains the film composed atom by microwave or radio frequency etc.; Form plasma body in the part, and the plasma chemical activity is very strong, is easy to react; Thereby can deposit the film of expectation easily at substrate surface; Therefore, in optoelectronic semiconductor and TFT production technique, thin film deposition mode commonly used is PECVD.
The vacuum tightness that the PECVD reaction requires reaction chamber is than higher, and reaction chamber pressure inside general requirement is below 10mtorr, and temperature is between 200 ℃～400 ℃.In the pecvd process process; Because the electrology characteristic of semiconductor film (like the si film) or photovoltaic property etc. are bigger to the performance impact of semiconducter device, therefore, need carry out strictness control to the condition in the deposit film process; As, very high to the sealing requirements in the reaction chamber.But in actual mechanical process; May be owing to a variety of causes causes the stopping property in the reaction chamber relatively poor; As: the various parts in the reaction chamber are owing to use under higher temperature for a long time; Therefore be easy to produce the aged problem, it can not well be fastened after wearing out like the vacuum rubber valve, thereby causes the problem of stopping property difference; Cause causing after the relatively poor and parts replacement operation of stopping property problems such as little leakage also as to the parts in the reaction chamber after repeatedly keeping in repair.And prior art is when carrying out thin film deposition; Just the parameter to all gases that is used to react film former is arranged in the desired range before the deposition beginning; But do not consider above-mentioned little leakage and the relatively poor problem of stopping property; Therefore, can not guarantee in the deposition process of reality in the reaction chamber concentration of each gas whether in corresponding scope, thereby whether the electrology characteristic, photovoltaic property etc. that can not guarantee the film that actual deposition obtains meet the requirements.And be difficult to timely discovery for abnormal conditions such as leakage, chamber O-ring leakage in the MFC flow that exists in the reaction chamber, the gas at present; And these abnormal conditions may influence the concentration of the gas that is used for film former, thus the quality of the film that influence is produced.
At present; Monitoring to the film generative process; Main mode is through manual record corresponding apparatus parameter (parameter comprises RF Power, chamber pressure, gas flow etc.) when each sets step arrival; But device parameter is many, data volume is big, adopts the mode efficient of this kind manual record parameter low, in time the state of conversion unit.Whether whether unusual detection mode does the film that at present deposition is obtained, and a plurality of products after the thin film deposition are taken a sample test in batches, qualified with the thickness or the pattern of testing product.Though this kind mode can realize the detection to film quality to a certain extent; Whether but this kind mode can not detect the electrology characteristic or the photovoltaic property of film qualified; Therefore, but might make thickness and all qualified optical characteristics of pattern of film or the underproof product of photovoltaic property flow into market; Therefore, adopt existing detection mode not monitor the quality of the product behind the deposit film very accurately.
Summary of the invention
Above-mentioned technical problem to the prior art existence; The embodiment of the invention provides a kind of monitoring film deposition process unusual method and system; Unusual to confirm in the process of product being carried out thin film deposition, whether to take place, thus confirm further whether the film that deposition obtains is qualified, improves the accuracy that the product after the thin film deposition is carried out bad detection; Improve and produce qualification rate, reduce bad product and come into the market.
The unusual method of a kind of monitoring film deposition process comprises:
In film deposition process, monitor and obtain the mass spectrum information in the film deposition chamber in real time;
Generate mass spectrum information dynamic-change information according to the mass spectrum information that gets access to;
With the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual.
The unusual system of a kind of monitoring film deposition process comprises:
Vacuum reaction equipment is used at its reaction chamber product being carried out thin film deposition;
Mass spectrum information monitoring equipment is used for monitoring and obtain the mass spectrum information in the film deposition chamber in real time at film deposition process;
The deposition opertaing device, the mass spectrum information that is used for getting access to according to said mass spectrum information monitoring equipment generates mass spectrum information dynamic-change information; And with the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual.
In the embodiment of the invention; In film deposition process, monitor and obtain the mass spectrum information in the film deposition chamber in real time; Generate mass spectrum information dynamic-change information according to the mass spectrum information that gets access to, and with the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual; As the thin film deposition flow process takes place to stop when unusual, the thin film deposition flow process takes place then to proceed unusually.Adopt technical scheme of the present invention; Can confirm in the process of product being carried out thin film deposition, whether to take place unusual; Whether thereby it is qualified further to confirm to deposit the film that obtains; The accuracy that the product of raising after to thin film deposition carries out bad detection improves and produces qualification rate, reduces bad product and comes into the market.
Description of drawings
Fig. 1 is the structural representation of the system that the monitoring film deposition process is unusual in the embodiment of the invention;
Fig. 2 A, Fig. 2 B, Fig. 2 C and Fig. 2 D are respectively the structural representation of deposition opertaing device in the embodiment of the invention;
Fig. 3 is the unusual method flow diagram of monitoring film deposition process in the embodiment of the invention.
Embodiment
Above-mentioned technical problem to the prior art existence; The embodiment of the invention provides a kind of monitoring film deposition process unusual method and system; Unusual to confirm in the process of product being carried out thin film deposition, whether to take place, thus confirm further whether the film that deposition obtains is qualified, improves the accuracy that the product after the thin film deposition is carried out bad detection; Improve and produce qualification rate, reduce bad product and come into the market; Method can comprise: in film deposition process, monitor and obtain the mass spectrum information in the film deposition chamber in real time; Generate mass spectrum information dynamic-change information according to the mass spectrum information that gets access to; With the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual.
Below in conjunction with Figure of description technical scheme of the present invention is carried out detailed description.
Referring to Fig. 1, be the structural representation of the system that the monitoring film deposition process is unusual in the embodiment of the invention, this system can comprise:
Mass spectrum information monitoring equipment 12 is used for monitoring and obtain the mass spectrum information in the film deposition chamber in real time at film deposition process;
Preferably; Deposition opertaing device 13 determines whether to take place unusual; Can adopt following mode: in the time of in or the difference threshold range that both difference is being set identical with mass spectrum information change information under the film deposition process normal circumstances in said mass spectrum information dynamic-change information; Confirm that film deposition process does not take place unusually, otherwise confirm to take place unusual.With mass spectrum information is that nitrogen/concentration of oxygen is an example; Mass spectrum information monitoring equipment 12 is carrying out in the film deposition process product; Monitor nitrogen/concentration of oxygen value in this process in real time, and generate nitrogen/oxygen concentration dynamic changing curve according to nitrogen/concentration of oxygen value that real-time monitoring obtains; Dynamic changing curve with the nitrogen/oxygen concentration that obtains compares with the dynamic changing curve that preestablishes the nitrogen/oxygen concentration under the normal circumstances again; If the dynamic changing curve of the nitrogen/oxygen concentration under the nitrogen/oxygen concentration dynamic changing curve that generates and the normal circumstances is compared identical or in the preset threshold scope; Then confirm to take place unusually in the film deposition process, otherwise confirm to take place unusual.
Preferably, for guaranteeing in film deposition process to take place when unusual, notifying operation personnel timely, to improve the efficient that fault solves, deposition opertaing device 13 can be further used for: confirming to take place to carry out abnormal alarm when unusual.Alarm sound can be provided with flexibly; As be each stage setting alarm sound corresponding in the film deposition process in advance with this stage; When taking place in a certain stage when unusual; Can the stage corresponding alarm sound report to the police be to break down in which in film deposition process so that operator determine according to current alarm sound fast in stage.
Preferably; For further orienting the reason that breaks down in the film deposition process fast; Above-mentioned deposition opertaing device 13 can be further used for: when confirming that generation is unusual; The unusual mass spectrum information dynamic-change information record of said mass spectrum information dynamic-change information and storage is mated, and, confirm as the failure message that causes that current film deposition process is unusual the failure message of the corresponding record that matches.So that operator carry out corresponding fault handling according to the failure message of orienting, thereby the speed and the accuracy of operator's handling failures have been improved.
Preferably; To the fault place under repair that the subsequent thin film deposition process occurs reference is provided for ease of operator; Above-mentioned deposition opertaing device 13 also can be further used for: when not matching corresponding record; Generate a new record of said mass spectrum information dynamic-change information and corresponding failure message, and the unusual mass spectrum information dynamic-change information record of updated stored.
According to above-mentioned situation, can deposition opertaing device 13 be divided into analysis and processing unit 131, abnormal deciding means 132 and deposition control unit 133 according to function, shown in Fig. 2 A, wherein:
Analysis and processing unit 131, the mass spectrum information that the spectrum information monitoring unit 12 that is used to confront gets access to generate mass spectrum information dynamic-change information.
Preferably, deposition opertaing device 13 also can comprise alarm unit 134, shown in Fig. 2 B:
Preferably, the deposition opertaing device 13 shown in Fig. 2 A and Fig. 2 B also can comprise failure location unit 135, respectively shown in Fig. 2 C and Fig. 2 D:
Preferably, above-mentioned failure location unit 135 is further used for, and when not matching corresponding record, generates a new record of said mass spectrum information dynamic-change information and corresponding failure message, and the unusual mass spectrum information dynamic-change information record of updated stored.
In the embodiment of the invention, unusual mass spectrum information dynamic-change information record and corresponding failure message record thereof can be stored in the abnormal data storehouse of deposition opertaing device 13.
Preferably, can communicate through HUB (concentrator) between mass spectrum information monitoring equipment 12 in the embodiment of the invention and the deposition opertaing device 13.
In the embodiment of the invention, vacuum reaction equipment 11 can adopt the mode of CVD or PECVD to come product is carried out thin film deposition.Technical scheme of the present invention as to the thin film deposition in the production process of optoelectronic semiconductor, is particularly useful for the thin film deposition in the TFT production process applicable to various thin film depositions field.Mass spectrum information monitoring equipment 12 can adopt simple analyser to realize; Deposition opertaing device 13 can adopt computer realization.
Based on the said system structure, the embodiment of the invention also provides a kind of monitoring film deposition process unusual method, and the flow process of this method can be referring to Fig. 3.
Referring to 3, be the unusual method flow diagram of monitoring film deposition process in the embodiment of the invention, this method comprises:
Mass spectrum information in the reaction chamber of vacuum reaction equipment 11 is monitored and obtained to step 301, mass spectrum information monitoring equipment 12 in real time in film deposition process.
The mass spectrum information that step 302, deposition opertaing device 13 get access to according to mass spectrum information monitoring equipment 12 generates mass spectrum information dynamic-change information.
Preferably; In the above-mentioned steps 303; Deposition opertaing device 13 confirms whether film deposition process is unusual; Can adopt following mode: in the time of in or the difference threshold range that both difference is being set identical with mass spectrum information change information under the film deposition process normal circumstances, confirm that film deposition process does not take place unusually, otherwise confirm to take place unusually in said mass spectrum information dynamic-change information.
Preferably; For guaranteeing in film deposition process to take place when unusual, notifying operation personnel timely are to improve the efficient that fault solves; Above-mentioned steps 303 also can comprise step: deposition opertaing device 13 takes place to carry out abnormal alarm when unusual at definite film deposition process.
Preferably; For further orienting the reason that breaks down in the film deposition process fast; Above-mentioned steps 303 also can comprise step: deposition opertaing device 13 takes place when unusual at definite film deposition process, the unusual mass spectrum information dynamic-change information of said mass spectrum information dynamic-change information and storage is write down mate; If can match,, confirm as the failure message that causes that current film deposition process is unusual then with the failure message of the corresponding record that matches.So that operator carry out corresponding fault handling according to the failure message of orienting, thereby the speed and the accuracy of operator's handling failures have been improved.
Preferably; To the fault place under repair that the subsequent thin film deposition process occurs reference is provided for ease of operator; Above-mentioned steps 303 also can further comprise step: deposition opertaing device 13 is not when matching corresponding record; Generate a new record of said mass spectrum information dynamic-change information and corresponding failure message, and the unusual mass spectrum information dynamic-change information record of updated stored.
In the embodiment of the invention, on the one hand, in film deposition process, monitor and obtain the mass spectrum information in the film deposition chamber in real time; Generate mass spectrum information dynamic-change information according to the mass spectrum information that gets access to; And with the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual, as the thin film deposition flow process of next product takes place to stop to carry out when unusual; The thin film deposition flow process of next product does not take place then to proceed unusually; Can confirm in the process of product being carried out thin film deposition, whether to take place unusually, thereby whether qualified, improve the accuracy that the product after the thin film deposition is carried out bad detection if further confirming to deposit the film that obtains; Improve and produce qualification rate, reduce bad product and come into the market; On the other hand, taking place can to carry out abnormal alarm when unusual, thus the notifying operation personnel in film deposition process, take place unusually, thereby guaranteed that to a certain extent operator can find fault timely; Again on the one hand; When generation is unusual; Can the unusual mass spectrum information change situation of storing in mass spectrum information change situation that generates and the abnormal data storehouse be mated; When mating successfully, confirm as this thin film deposition according to the corresponding failure message of unusual mass spectrum information change situation that matches unusual failure message takes place, so that operator can carry out corresponding fault handling to vacuum reaction equipment timely according to the failure message of determining; In addition; If the mass spectrum information change situation that generates can not match corresponding unusual mass spectrum information change situation in the abnormal data storehouse; After this time obtains processing unusually, mass spectrum information change situation that generates and corresponding failure message are stored in the abnormal data storehouse, thereby are to carry out fault handling when generation is unusual in the follow-up film deposition process reference is provided; So that operator can orient fault cause timely, thereby improve fault handling efficient.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (13)
1. the method that the monitoring film deposition process is unusual is characterized in that, comprising:
In film deposition process, monitor and obtain the mass spectrum information in the film deposition chamber in real time;
Generate mass spectrum information dynamic-change information according to the mass spectrum information that gets access to;
With the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual.
2. the method for claim 1 is characterized in that, confirms that whether film deposition process is unusual, comprising:
In the time of in or the difference threshold range that both difference is being set identical with mass spectrum information change information under the film deposition process normal circumstances, confirm that film deposition process does not take place unusually, otherwise confirm to take place unusually in said mass spectrum information dynamic-change information.
3. the method for claim 1 is characterized in that, said mass spectrum information is the concentration value of specific gas that is used to generate the film of said product.
4. like each described method of claim 1～3, it is characterized in that, also comprise:
Take place to carry out abnormal alarm when unusual at definite film deposition process.
5. the method for claim 1 is characterized in that, also comprises:
Take place when unusual at definite film deposition process, the unusual mass spectrum information dynamic-change information record of said mass spectrum information dynamic-change information and storage is mated;
With the failure message of the corresponding record that matches, confirm as the failure message that causes that current film deposition process is unusual.
6. method as claimed in claim 5 is characterized in that, also comprises:
When not matching corresponding record, generate a new record of said mass spectrum information dynamic-change information and corresponding failure message, and the unusual mass spectrum information dynamic-change information record of updated stored.
7. the system that the monitoring film deposition process is unusual is characterized in that, comprising:
Vacuum reaction equipment is used at its reaction chamber product being carried out thin film deposition;
Mass spectrum information monitoring equipment is used for monitoring and obtain the mass spectrum information in the film deposition chamber in real time at film deposition process;
The deposition opertaing device, the mass spectrum information that is used for getting access to according to said mass spectrum information monitoring equipment generates mass spectrum information dynamic-change information; And with the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual.
8. system as claimed in claim 7 is characterized in that, said deposition opertaing device comprises:
Analysis and processing unit, the mass spectrum information that is used for getting access to according to said mass spectrum information monitoring equipment generates mass spectrum information dynamic-change information;
Abnormal deciding means; Be used for when said vacuum reaction equipment carries out the thin film deposition end to said product; With the mass spectrum information change information under said mass spectrum information dynamic-change information and the film deposition process normal circumstances relatively, confirm whether film deposition process is unusual;
The deposition control unit is used for when said abnormal deciding means judges that generation is unusual, controlling the shut-down operation of said vacuum reaction equipment; And, be used for judging and do not take place to control said vacuum reaction equipment and continue operation when unusual in said abnormal deciding means.
9. system as claimed in claim 8; It is characterized in that; Said abnormal deciding means; Specifically be used for: in the time of in or the difference threshold range that both difference is being set identical with mass spectrum information change information under the film deposition process normal circumstances, confirm that film deposition process does not take place unusually, otherwise confirm to take place unusually in said mass spectrum information dynamic-change information.
10. like claim 8 or 9 described systems, it is characterized in that said deposition opertaing device also comprises:
Alarm unit is used for taking place to carry out abnormal alarm when unusual in said judgment unit judges.
11., it is characterized in that said deposition opertaing device also comprises like claim 8 or 9 described systems:
Failure location unit is used for taking place when unusual in said judgment unit judges, and the mass spectrum information dynamic-change information that said analysis and processing unit is obtained and the unusual mass spectrum information dynamic-change information record of storage mate; With the failure message of the corresponding record that matches, confirm as the failure message that causes that current film deposition process is unusual.
12. system as claimed in claim 11; It is characterized in that; Said failure location unit is further used for; When not matching corresponding record, generate a new record of said mass spectrum information dynamic-change information and corresponding failure message, and the unusual mass spectrum information dynamic-change information record of updated stored.
13. system as claimed in claim 7 is characterized in that, communicates through concentrator between said mass spectrum information monitoring equipment and the said deposition opertaing device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110185574.7A CN102628165B (en) | 2011-07-04 | 2011-07-04 | Method for monitoring abnormity of film deposition process and system thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110185574.7A CN102628165B (en) | 2011-07-04 | 2011-07-04 | Method for monitoring abnormity of film deposition process and system thereof |
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| CN102628165A true CN102628165A (en) | 2012-08-08 |
| CN102628165B CN102628165B (en) | 2014-12-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108161714A (en) * | 2016-12-07 | 2018-06-15 | 上海新微技术研发中心有限公司 | Method and device for on-line monitoring metal deposition and grinding |
| CN111199896A (en) * | 2018-11-16 | 2020-05-26 | 长鑫存储技术有限公司 | Monitoring system and monitoring method for semiconductor manufacturing device |
| CN112684829A (en) * | 2020-12-22 | 2021-04-20 | 同济大学 | Temperature detection control system and method for MPCVD device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364946A (en) * | 2001-01-11 | 2002-08-21 | 大连理工大学 | Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology |
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2011
- 2011-07-04 CN CN201110185574.7A patent/CN102628165B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364946A (en) * | 2001-01-11 | 2002-08-21 | 大连理工大学 | Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108161714A (en) * | 2016-12-07 | 2018-06-15 | 上海新微技术研发中心有限公司 | Method and device for on-line monitoring metal deposition and grinding |
| CN111199896A (en) * | 2018-11-16 | 2020-05-26 | 长鑫存储技术有限公司 | Monitoring system and monitoring method for semiconductor manufacturing device |
| CN112684829A (en) * | 2020-12-22 | 2021-04-20 | 同济大学 | Temperature detection control system and method for MPCVD device |
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| CN102628165B (en) | 2014-12-10 |
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