CN103436844A - Coating device and method for depositing flexible substrate ITO film at low temperature - Google Patents
Coating device and method for depositing flexible substrate ITO film at low temperature Download PDFInfo
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- CN103436844A CN103436844A CN2013103628677A CN201310362867A CN103436844A CN 103436844 A CN103436844 A CN 103436844A CN 2013103628677 A CN2013103628677 A CN 2013103628677A CN 201310362867 A CN201310362867 A CN 201310362867A CN 103436844 A CN103436844 A CN 103436844A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title abstract description 21
- 239000011248 coating agent Substances 0.000 title abstract description 10
- 238000000576 coating method Methods 0.000 title abstract description 10
- 238000004804 winding Methods 0.000 claims abstract description 43
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 42
- 238000005086 pumping Methods 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 43
- 239000007888 film coating Substances 0.000 claims description 31
- 238000009501 film coating Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 24
- 238000005096 rolling process Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 7
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- 230000001939 inductive effect Effects 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 47
- 230000005684 electric field Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
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- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
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Abstract
The invention discloses a coating device and method for depositing a flexible substrate ITO (Indium Tin Oxide) film at low temperature. According to the device, a substrate winding mechanism capable of achieving corotation and reversion, an ion source and an unbalance intermediate frequency magnetron sputtering mechanism are all arranged inside a container, the ion source is arranged on the outer side of an unwinding component in the substrate winding mechanism, and the unbalance intermediate frequency magnetron sputtering mechanism is arranged on the outer side of a main roller in the substrate winding mechanism; a body of the container is externally connected with a high-vacuum air exhausting mechanism, the input end of the substrate winding mechanism is externally connected with a workpiece transmission mechanism, one end of the main roller of the substrate winding mechanism is externally connected with a cold-hot exchange mechanism. The method comprises the follows: a workpiece conveying mechanism is used for conveying a sample; the high-vacuum air exhausting mechanism is used for performing vacuum-pumping on the body of the container; the substrate winding mechanism adopts the unbalance intermediate frequency magnetron sputtering for depositing the flexible substrate ITO film at low temperature when the flexible substrate is conveyed. According to the invention, high quality flexible substrate ITO film is obtained through low temperature depositing, the product quality is high, and the application range is broad.
Description
Technical field
The present invention relates to the coating technique of ito thin film, particularly a kind of low temperature depositing flexible parent metal ITO film film coating apparatus and method.
Background technology
Electrically conducting transparent (TCO) film is a kind of to visible ray average transmittances high (T>80%), low (ρ<10 of resistivity
-3Ω cm), have transparent, as to conduct electricity two large characteristics particular matter concurrently, be widely used in the fields such as flat pannel display, touch-screen, solar cell, opto-electronic device.Wherein, the ITO transparent conductive film is to study at present and apply one of more high quality TCO film, the ITO transparent conductive film has high visible light transmissivity, low-resistivity, good to the substrate tack, and the characteristics such as high rigidity, wear resistance, resistance to chemical attack characteristic.
With hard substrates ITO film, compare, flexible parent metal ITO film not only has the photoelectric characteristic of hard substrates ITO film, and have lightweight, collapsible, be difficult for fragmentation and be convenient to the advantages such as transportation, facility investment are few.The ito thin film of the copper mesh pattern of the live width 25 μ m left and right that Japanese Seiren company in 2008 forms on the transparent PET film by dectroless plating, can shield the above electric field (frequency is l0M～1GHz) of 40dB, the transmitance of visible ray is 80%, can be used as the transparency electromagnetic wave shield materials'use.The developed country such as U.S. has taken the lead in using flexible parent metal ITO film to develop and produce the plastic liquid crystal indicating meter in recent years, and has obtained multiple application.
At present, the preparation method of flexible ito thin film mainly contains magnetron sputtering method, chemical Vapor deposition process, spray heating decomposition and sol-gel processing, and wherein, the magnetron sputtering method technical maturity, for the production of flexible parent metal ITO film.But, in traditional magnetron sputtering method, in order to improve the quality of forming film of flexible parent metal ITO film, generally need to carry out heat treated to flexible parent metal, but have shortcomings: (1) flexible parent metal non-refractory, heat is yielding; (2) under hot conditions, base material has phenomenon of deflation in sputter procedure, and the impurity element of emitting enters easy ITO film, can have a strong impact on film quality, makes its electroconductibility and visible region transmissivity all not ideal enough; (3) hot environment is high for the thermotolerance requirement of equipment work-piece, increases equipment cost.Therefore, inquire into the film coating apparatus and the method that prepare high quality flexible parent metal ITO film under cold condition and there is actual meaning.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of low temperature depositing flexible parent metal ITO film film coating apparatus is provided, this device can realize depositing at normal temperatures high-quality ITO nesa coating.
Another object of the present invention is to provide a kind of low temperature depositing flexible parent metal ITO film film coating method of realizing by said apparatus.
Technical scheme of the present invention is: a kind of low temperature depositing flexible parent metal ITO film film coating apparatus, comprise and can realize the base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body that rotate and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in the base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in the base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism of the input terminus of base material winding mechanism, the external cold-heat exchanger structure of home roll one end of base material winding mechanism.
Described base material winding mechanism comprise successively connect unreel assembly, home roll and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; Throughput direction according to flexible parent metal, unreel assembly and comprise let off roll, the first deflector roll, the first measuring roll, the second deflector roll and the 3rd deflector roll connected successively, the rolling assembly comprises the 4th deflector roll, the 5th deflector roll, the second measuring roll, the 6th deflector roll and the wind-up roll connected successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.
Described container body is horizontal cylinder-like structure, home roll is located in the space of container body bottom, let off roll and wind-up roll are located at respectively in the space on container body top, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the home roll below, and ion source is located on the container body inwall that unreels the assembly outside.In the space of container body bottom, form coating film area around non-equilibrium medium frequency magnetron sputtering mechanism.
Described non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets, midfrequent AC power supply of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes; Each sputter cathode comprises respectively target, cathode and magnet, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributed side by side is set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
Two sputter cathodes in described cathode sets are twin arrangement architecture, and the magnet in two cathodes distributes side by side, but the pole polarity between adjacent two magnet in different sputter cathodes is contrary.
When described non-equilibrium medium frequency magnetron sputtering mechanism comprises multipair cathode sets, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
Traditional magnetron sputtering deposition principle is: at first on sputter cathode, add a high-voltage electric field, realized that vacuum discharge is glow discharge, impact due to the magnetically confined electron motion, make electronics constantly with the working gas be filled with in container body, produce collision, then produce ionization, form stable plasma discharge.Ion in plasma body is the bombarding cathode target under the attraction of electric field, has realized the sputtering sedimentation of target.
And the non-equilibrium medium frequency magnetron sputtering mechanism in this film coating apparatus, its principle of work is: adopt a midfrequent AC power supply of each cathode sets configuration, make two sputter cathodes positive and negative each other, form alternating electric field and magnetic field, enlarge plasma body zone scope, add in addition unbalanced magnetic field to make closed magnetic field no longer be confined to single sputter cathode surface, but the closed loop space magnetic field in a large zone of the formation between many sputter cathodes has further enlarged plasma area.Because plasma zone has covered substrate surface, simultaneously under the effect in alternating electric field and magnetic field, electronics in the plasma body zone shakes at a high speed motion, the continuous bombarding base material of electronics surface, thereby depositional coating is carried out to electronics bombardment and surface heating processing, improve the degree of crystallinity of rete, improve rete electroconductibility and visible region transmissivity.Therefore without to the flexible parent metal heating, can realize the flexible ITO film of deposition better quality under cold condition.
Described fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and the diffusion pump machine is mounted on an end of container body, and the molecular pump machine is mounted on the bottom of container body; The diffusion pump unit comprises diffusion pump and the first forepump, and diffusion pump one end is connected with container body, and the diffusion pump the other end is connected with the first forepump by pipeline, and diffusion pump is provided with valve with the pipeline that the first forepump is connected; The molecular pump unit comprises molecular pump and the second forepump, and molecular pump one end is connected with the container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.Wherein, the molecular pump unit is mainly vacuumized the upper cavity of container body, and the molecular pump unit is mainly vacuumized the coating film area of container body bottom; Use diffusion pump unit that exhaust capacity is large and molecular pump unit to combine container body is vacuumized, can guarantee in whole container body to obtain high vacuum, the phenomenon of the upper cavity vacuum degree deficiency of avoiding using traditional vacuum device to produce.
The present invention realizes a kind of low temperature depositing flexible parent metal ITO film film coating method by said apparatus, comprises the following steps:
(1) workpiece conveying mechanism is sent into flexible parent metal in the base material winding mechanism in container body;
(2) starting fine pumping mechanism is vacuumized container body;
(3) after the vacuum tightness in container body reaches predetermined vacuum level, start the base material winding mechanism, flexible parent metal is unreeled to the transmission with rolling;
(5), after flexible parent metal unreels, first by ion source, flexible parent metal is carried out to the ion surface processing;
(6), when flexible parent metal is sent to the home roll place, carry out sputter by non-equilibrium medium frequency magnetron sputtering mechanism, at flexible parent metal surface deposition ITO layer.
Wherein, in described step (6), after non-equilibrium medium frequency magnetron sputtering mechanism carries out sputter, if the ITO layer thickness on flexible parent metal surface does not reach the desired thickness of product, base material winding mechanism reversion, non-equilibrium medium frequency magnetron sputtering mechanism carries out the secondary sputter to the flexible parent metal surface.
Described flexible parent metal is high temperature material or non-refractory material; The non-refractory material is as PET etc.
The width of flexible parent metal is 300～2500mm, and the winding diameter of flexible parent metal is 200～1000mm.
At the base material winding mechanism, transmit in the process of flexible parent metal, the first measuring roll or the second measuring roll can be controlled tension force and the speed that flexible parent metal transmits by external servomotor monitor speed mechanism.
The present invention, with respect to prior art, has following beneficial effect:
(1) in this low temperature depositing flexible parent metal ITO film film coating apparatus, sputtering system has been used non-equilibrium medium frequency magnetron sputtering technology, can realize the flexible ITO film of low temperature depositing high-quality.Without add a large amount of heater elements in device, not only reduced the manufacturing cost of equipment, and applicable to non-refractory, base material (as the PET film) plated film cheaply.
(2) in this low temperature depositing flexible parent metal ITO film film coating apparatus, can control tension force and the speed that flexible parent metal transmits by servomotor monitor speed mechanism, because servomotor is a closed loop feedback system, it can monitor tension force and rotating speed accurately in real time, make that flexible parent metal tension force is moderate, rotating speed is mild, thereby improve film equality.
(3) in this low temperature depositing flexible parent metal ITO film film coating apparatus, the base material winding mechanism is provided with ion source unreeling side, the ion source ionized gas, and will ionize the ion produced and be attached to substrate surface, thereby improve the sticking power of substrate surface rete, improve the final product quality of flexible ITO film.
(4) in this low temperature depositing flexible parent metal ITO film film coating apparatus, the external cold-heat exchanger structure of home roll, constantly pass into circulating cooling liquid to home roll by the cold-heat exchanger structure, can prevent flexible parent metal distortion in the sputter coating process, guarantees quality product.
(5), in this low temperature depositing flexible parent metal ITO film film coating apparatus, adopt fine pumping mechanism to be vacuumized container body.Due to traditional molecular pump during to plated film district pumping high vacuum, can produce the phenomenon of upper cavity vacuum degree deficiency, and flexible parent metal has phenomenon of deflation in sputter procedure, the diffusion pump unit that the utilization exhaust capacity is large and molecular pump unit combine container body are vacuumized, and can guarantee in whole container body to obtain high vacuum.
The accompanying drawing explanation
The structural representation that Fig. 1 is this low temperature depositing flexible parent metal ITO film film coating apparatus;
The structural representation that Fig. 2 is non-equilibrium medium frequency magnetron sputtering mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
The structural representation that Fig. 3 is base material winding mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
The structural representation that Fig. 4 is fine pumping mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
Fig. 5 is structural representation during the external cold-heat exchanger structure of home roll in this low temperature depositing flexible parent metal ITO film film coating apparatus.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
A kind of low temperature depositing flexible parent metal of the present embodiment ITO film film coating apparatus, as shown in Figure 1, comprise and can realize the base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body 1 that rotate and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in the base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in the base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism 2 of the input terminus of base material winding mechanism, as shown in Figure 5, the external cold-heat exchanger structure 14 of home roll 3 one end of base material winding mechanism.Wherein, workpiece conveying mechanism can adopt traditional film workpiece delivery system, and the cold-heat exchanger structure can adopt traditional cold-heat exchanger group.
As shown in Figure 3, the base material winding mechanism comprise successively connect unreel assembly, home roll 3 and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; Throughput direction according to flexible parent metal, unreel assembly and comprise let off roll 4, the first deflector roll 5, the first measuring roll 6, the second deflector roll 7 and the 3rd deflector roll 8 connected successively, the rolling assembly comprises the 4th deflector roll 9, the 5th deflector roll 10, the second measuring roll 11, the 6th deflector roll 12 and the wind-up roll 13 connected successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.Servomotor monitor speed mechanism can adopt traditional servomotor Speed Controller.
As shown in Figure 3, container body 1 is horizontal cylinder-like structure, and home roll is located in the space of container body bottom, and let off roll and wind-up roll are located at respectively in the space on container body top, non-equilibrium medium frequency magnetron sputtering mechanism is located at the home roll below, and ion source is located on the container body inwall that unreels the assembly outside.In the space of container body bottom, form coating film area around non-equilibrium medium frequency magnetron sputtering mechanism.
As shown in Figure 2, non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets 15, midfrequent AC power supply 16 of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes 17; Each sputter cathode comprises respectively target 18, cathode 19 and magnet 20, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributed side by side is set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
Wherein, two sputter cathodes in cathode sets are twin arrangement architecture, and the magnet in two cathodes distributes side by side, but the pole polarity between adjacent two magnet in different sputter cathodes is contrary.
In the present embodiment, when non-equilibrium medium frequency magnetron sputtering mechanism comprises two anticathode groups, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
Traditional magnetron sputtering deposition principle is: at first on sputter cathode, add a high-voltage electric field, realized that vacuum discharge is glow discharge, impact due to the magnetically confined electron motion, make electronics constantly with the working gas be filled with in container body, produce collision, then produce ionization, form stable plasma discharge.Ion in plasma body is the bombarding cathode target under the attraction of electric field, has realized the sputtering sedimentation of target.
And the non-equilibrium medium frequency magnetron sputtering mechanism in this film coating apparatus, its principle of work is: adopt a midfrequent AC power supply of each cathode sets configuration, make two sputter cathodes positive and negative each other, form alternating electric field and magnetic field, enlarge plasma body zone scope, add in addition unbalanced magnetic field to make closed magnetic field no longer be confined to single sputter cathode surface, but the closed loop space magnetic field in a large zone of the formation between many sputter cathodes has further enlarged plasma area.Because plasma zone has covered substrate surface, simultaneously under the effect in alternating electric field and magnetic field, electronics in the plasma body zone shakes at a high speed motion, the continuous bombarding base material of electronics surface, thereby depositional coating is carried out to electronics bombardment and surface heating processing, improve the degree of crystallinity of rete, improve rete electroconductibility and visible region transmissivity.Therefore without to the flexible parent metal heating, can realize the flexible ITO film of deposition better quality under cold condition.
As shown in Figure 4, fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and the diffusion pump machine is mounted on an end of container body, and the molecular pump machine is mounted on the bottom of container body; The diffusion pump unit comprises diffusion pump 21 and the first forepump 22, and diffusion pump one end is connected with container body 1, and the diffusion pump the other end is connected with the first forepump by pipeline 23, and the pipeline that diffusion pump is connected with the first forepump is provided with valve 24; The molecular pump unit comprises molecular pump 25 and the second forepump 26, and molecular pump one end is connected with the container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.Wherein, the molecular pump unit is mainly vacuumized the upper cavity of container body, and the molecular pump unit is mainly vacuumized the coating film area of container body bottom; Use diffusion pump unit that exhaust capacity is large and molecular pump unit to combine container body is vacuumized, can guarantee in whole container body to obtain high vacuum, the phenomenon of the upper cavity vacuum degree deficiency of avoiding using traditional vacuum device to produce.
The present embodiment is realized a kind of low temperature depositing flexible parent metal ITO film film coating method by the described device of embodiment 1, comprises the following steps:
(1) workpiece conveying mechanism is sent into flexible parent metal in the base material winding mechanism in container body;
(2) starting fine pumping mechanism is vacuumized container body;
(3) after the vacuum tightness in container body reaches predetermined vacuum level, start the base material winding mechanism, flexible parent metal is unreeled to the transmission with rolling;
(5), after flexible parent metal unreels, first by ion source, flexible parent metal is carried out to the ion surface processing;
(6), when flexible parent metal is sent to the home roll place, carry out sputter by non-equilibrium medium frequency magnetron sputtering mechanism, at flexible parent metal surface deposition ITO layer.
Wherein, in step (6), after non-equilibrium medium frequency magnetron sputtering mechanism carries out sputter, if the ITO layer thickness on flexible parent metal surface does not reach the desired thickness of product, base material winding mechanism reversion, non-equilibrium medium frequency magnetron sputtering mechanism carries out the secondary sputter to the flexible parent metal surface.
Flexible parent metal is high temperature material or non-refractory material; The non-refractory material is as PET etc.
The width of flexible parent metal is 300～2500mm, and the winding diameter of flexible parent metal is 200～1000mm.
At the base material winding mechanism, transmit in the process of flexible parent metal, the first measuring roll or the second measuring roll can be controlled tension force and the speed that flexible parent metal transmits by external servomotor monitor speed mechanism.
Thickness, percent crystallization in massecuite, resistivity, transmitance and the surface topography of the ITO film that aforesaid method is made carry out characterization test, and its percent crystallization in massecuite is high, and resistivity reaches 1.5 * 10
-4Ω cm, transmitance is greater than 80%, and uniformity coefficient is ± 5%.
In rolls in the process of mechanism driving flexible parent metal, ion source ionized gas (as oxygen, argon gas), and will ionize the ion produced and be attached to substrate surface, thus improve the sticking power of substrate surface rete, improve the final product quality of flexible ito thin film; Servomotor monitor speed mechanism is monitored the first measuring roll and the second measuring roll, the voltage signal of the first measuring roll and the second measuring roll collection is converted into to torque and rotational speed to drive the first measuring roll and second to detect, realize monitoring tension force and rotating speed in real time, make the moderate rotating speed of substrate tension mild, thereby improve film equality; Non-equilibrium medium frequency magnetron sputtering mechanism can cause that base material heats up during plated film, the cold-heat exchanger structure is set and is communicated with home roll, and the cold-heat exchanger structure constantly passes into circulating cooling liquid to home roll, prevents that flexible parent metal is out of shape.
As mentioned above, just can realize preferably the present invention, above-described embodiment is only preferred embodiment of the present invention, not is used for limiting practical range of the present invention; Be that all equalizations of doing according to content of the present invention change and modify, all contained by the claims in the present invention scope required for protection.
Claims (10)
1. a low temperature depositing flexible parent metal ITO film film coating apparatus, it is characterized in that, comprise and can realize the base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body that rotate and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in the base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in the base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism of the input terminus of base material winding mechanism, the external cold-heat exchanger structure of home roll one end of base material winding mechanism.
2. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, is characterized in that, described base material winding mechanism comprise connect successively unreel assembly, home roll and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; Throughput direction according to flexible parent metal, unreel assembly and comprise let off roll, the first deflector roll, the first measuring roll, the second deflector roll and the 3rd deflector roll connected successively, the rolling assembly comprises the 4th deflector roll, the 5th deflector roll, the second measuring roll, the 6th deflector roll and the wind-up roll connected successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.
3. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 2, it is characterized in that, described container body is horizontal cylinder-like structure, home roll is located in the space of container body bottom, let off roll and wind-up roll are located at respectively in the space on container body top, non-equilibrium medium frequency magnetron sputtering mechanism is located at the home roll below, and ion source is located on the container body inwall that unreels the assembly outside.
4. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, is characterized in that, described non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets, midfrequent AC power supply of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes; Each sputter cathode comprises respectively target, cathode and magnet, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributed side by side is set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
5. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 4, it is characterized in that, two sputter cathodes in described cathode sets are twin arrangement architecture, magnet in two cathodes distributes side by side, but the pole polarity between adjacent two magnet in different sputter cathodes is contrary.
6. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 4, it is characterized in that, when described non-equilibrium medium frequency magnetron sputtering mechanism comprises multipair cathode sets, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
7. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, it is characterized in that, described fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and the diffusion pump machine is mounted on an end of container body, and the molecular pump machine is mounted on the bottom of container body; The diffusion pump unit comprises diffusion pump and the first forepump, and diffusion pump one end is connected with container body, and the diffusion pump the other end is connected with the first forepump by pipeline, and diffusion pump is provided with valve with the pipeline that the first forepump is connected; The molecular pump unit comprises molecular pump and the second forepump, and molecular pump one end is connected with the container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.
8. realize a kind of low temperature depositing flexible parent metal ITO film film coating method according to the described device of claim 1～7 any one, it is characterized in that, comprise the following steps:
(1) workpiece conveying mechanism is sent into flexible parent metal in the base material winding mechanism in container body;
(2) starting fine pumping mechanism is vacuumized container body;
(3) after the vacuum tightness in container body reaches predetermined vacuum level, start the base material winding mechanism, flexible parent metal is unreeled to the transmission with rolling;
(5), after flexible parent metal unreels, first by ion source, flexible parent metal is carried out to the ion surface processing;
(6), when flexible parent metal is sent to the home roll place, carry out sputter by non-equilibrium medium frequency magnetron sputtering mechanism, at flexible parent metal surface deposition ITO layer.
9. a kind of low temperature depositing flexible parent metal ITO film film coating method according to claim 8, it is characterized in that, in described step (6), after non-equilibrium medium frequency magnetron sputtering mechanism carries out sputter, if the ITO layer thickness on flexible parent metal surface does not reach the desired thickness of product, base material winding mechanism reversion, non-equilibrium medium frequency magnetron sputtering mechanism carries out the secondary sputter to the flexible parent metal surface.
10. a kind of low temperature depositing flexible parent metal ITO film film coating method according to claim 8, is characterized in that, described flexible parent metal is high temperature material or non-refractory material;
The width of flexible parent metal is 300～2500mm, and the winding diameter of flexible parent metal is 200～1000mm.
Priority Applications (1)
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| CN105039925A (en) * | 2015-07-21 | 2015-11-11 | 赛柏利安工业技术（苏州）有限公司 | Independent vertical multilayer-ITO-flexible-base-material automatic-control winding system capable of walking integrally |
| CN106011773A (en) * | 2016-06-20 | 2016-10-12 | 广东振华科技股份有限公司 | EMI shielding film magnetic control winding coating machine |
| CN105986235B (en) * | 2016-06-27 | 2018-09-07 | 广东腾胜真空技术工程有限公司 | Multifunction rolling is around filming equipment and method |
| CN109554669A (en) * | 2019-02-12 | 2019-04-02 | 浙江德佑新材料科技有限公司 | A kind of roll-to-roll vacuum coating equipment of continuity |
| CN109751866A (en) * | 2019-02-27 | 2019-05-14 | 志圣科技（广州）有限公司 | A kind of contactless delivery tunnel furnace |
| CN113690043A (en) * | 2021-10-25 | 2021-11-23 | 天津三环乐喜新材料有限公司 | Neodymium iron boron heavy rare earth infiltration method and device thereof |
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| CN105039925A (en) * | 2015-07-21 | 2015-11-11 | 赛柏利安工业技术（苏州）有限公司 | Independent vertical multilayer-ITO-flexible-base-material automatic-control winding system capable of walking integrally |
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| CN109751866A (en) * | 2019-02-27 | 2019-05-14 | 志圣科技（广州）有限公司 | A kind of contactless delivery tunnel furnace |
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| CN113690043A (en) * | 2021-10-25 | 2021-11-23 | 天津三环乐喜新材料有限公司 | Neodymium iron boron heavy rare earth infiltration method and device thereof |
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Application publication date: 20131211 |