CN203487223U - Coating device for depositing flexible base material ITO (Indium Tin Oxides) film at low temperature - Google Patents
Coating device for depositing flexible base material ITO (Indium Tin Oxides) film at low temperature Download PDFInfo
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- CN203487223U CN203487223U CN201320510087.8U CN201320510087U CN203487223U CN 203487223 U CN203487223 U CN 203487223U CN 201320510087 U CN201320510087 U CN 201320510087U CN 203487223 U CN203487223 U CN 203487223U
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Abstract
The utility model discloses a coating device for depositing a flexible base material ITO (indium tin oxides) film at low temperature. The coating device is characterized in that a base material winding mechanism capable of rotating forward and reversely, an ion source and a nonequilibrium medium-frequency magnetron sputtering mechanism are respectively arranged in a container body, the ion source is arranged on the outer side of an unwinding assembly in the base material winding mechanism, and the nonequilibrium medium-frequency magnetron sputtering mechanism is arranged on the outer side of a main roller in the base material winding mechanism; the container body is externally connected with a high-vacuum exhausting mechanism, the input end of the base material winding mechanism is externally connected with a workpiece conveying mechanism, and one end of the main roller of the base material winding mechanism is externally connected with a cold-heat exchange mechanism. According to the utility model, the high-quality flexible base material ITO film is deposited at low temperature, the product quality is high, and the application range is wide.
Description
Technical field
The utility model relates to the coating technique of ito thin film, particularly a kind of low temperature depositing flexible parent metal ITO film film coating apparatus.
Background technology
Electrically conducting transparent (TCO) film is a kind of to visible ray average transmittances high (T>80%), low (the ρ <10 of resistivity
-3Ω cm), have particular matters transparent, conduction two large characteristics concurrently, be widely used in the fields such as flat pannel display, touch-screen, solar cell, opto-electronic device.Wherein, ITO transparent conductive film is to study at present and apply one of more high quality TCO film, ITO transparent conductive film has high visible light transmissivity, low-resistivity, good to substrate tack, and the feature such as high rigidity, wear resistance, resistance to chemical attack characteristic.
Compare with hard substrates ITO film, flexible parent metal ITO film not only has the photoelectric characteristic of hard substrates ITO film, and have lightweight, collapsible, be difficult for fragmentation and be convenient to the advantages such as transportation, facility investment are few.The ito thin film of the copper mesh pattern of the live width 25 μ m left and right that Japanese Seiren company in 2008 forms on transparent PET film by dectroless plating, can shield electric field (frequency is l0M～1GHz) more than 40dB, the transmitance of visible ray is 80%, can be used as transparency electromagnetic wave shield materials'use.In recent years the developed country such as U.S. oneself take the lead in using flexible parent metal ITO film to develop and produce plastic liquid crystal indicating meter, and obtained multiple application.
At present, the preparation method of flexible ito thin film mainly contains magnetron sputtering method, chemical Vapor deposition process, spray heating decomposition and sol-gel processing, and wherein, magnetron sputtering method technical maturity, for the production of flexible parent metal ITO film.But in traditional magnetron sputtering method, in order to improve the quality of forming film of flexible parent metal ITO film, generally need to carry out heat treated to flexible parent metal, but have shortcomings: (1) flexible parent metal non-refractory, heat is yielding; (2) under hot conditions, base material has phenomenon of deflation in sputter procedure, and the impurity element of emitting enters easy ITO film, can have a strong impact on film quality, makes its electroconductibility and visible region transmissivity all not ideal enough; (3) hot environment is high for the thermotolerance requirement of equipment work-piece, increases equipment cost.Therefore, inquire into film coating apparatus and the method under cold condition, prepare high quality flexible parent metal ITO film and there is actual meaning.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of low temperature depositing flexible parent metal ITO film film coating apparatus is provided, and this device can be realized and deposit at normal temperatures high-quality ITO nesa coating.
The technical solution of the utility model is: a kind of low temperature depositing flexible parent metal ITO film film coating apparatus, comprise and can realize base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body rotating and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism of input terminus of base material winding mechanism, the external cold-heat exchanger structure in home roll one end of base material winding mechanism.
Described base material winding mechanism comprise successively connect unreel assembly, home roll and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; According to the throughput direction of flexible parent metal, unreel assembly and comprise let off roll, the first deflector roll, the first measuring roll, the second deflector roll and the 3rd deflector roll connecting successively, rolling assembly comprises the 4th deflector roll, the 5th deflector roll, the second measuring roll, the 6th deflector roll and the wind-up roll connecting successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.
Described container body is horizontal cylinder-like structure, home roll is located in the space of container body bottom, let off roll and wind-up roll are located at respectively in the space on container body top, and non-equilibrium medium frequency magnetron sputtering mechanism is located at home roll below, and ion source is located on the container body inwall that unreels assembly outside.In the space of container body bottom, non-equilibrium medium frequency magnetron sputtering mechanism forms coating film area around.
Described non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets, midfrequent AC power supply of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes; Each sputter cathode comprises respectively target, cathode and magnet, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributing is side by side set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
Two sputter cathodes in described cathode sets are twin arrangement architecture, and the magnet in two cathodes distributes side by side, but pole polarity between adjacent two magnet in different sputter cathodes is contrary.
When described non-equilibrium medium frequency magnetron sputtering mechanism comprises multipair cathode sets, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
Traditional magnetron sputtering deposition principle is: first on sputter cathode, add a high-voltage electric field, having realized vacuum discharge is glow discharge, impact due to magnetically confined electron motion, make electronics constantly produce collision with the working gas being filled with in container body, then produce ionization, form stable plasma discharge.Ion in plasma body is bombarding cathode target under the attraction of electric field, has realized the sputtering sedimentation of target.
And non-equilibrium medium frequency magnetron sputtering mechanism in this film coating apparatus, its principle of work is: adopt a midfrequent AC power supply of each cathode sets configuration, make two sputter cathodes positive and negative each other, form alternating electric field and magnetic field, expand plasma body region scope, add in addition unbalanced magnetic field to make closed magnetic field no longer be confined to single sputter cathode surface, but the closed loop space magnetic field in a large region of formation between many sputter cathodes has further expanded plasma area.Because plasma zone has covered substrate surface, simultaneously under the effect in alternating electric field and magnetic field, electronics in plasma body region shakes at a high speed motion, the continuous bombarding base material of electronics surface, thereby depositional coating is carried out to electronics bombardment and surface heating processing, improve the degree of crystallinity of rete, improve rete electroconductibility and visible region transmissivity.Therefore without to flexible parent metal heating, can realize the flexible ITO film that deposits better quality under cold condition.
Described fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and diffusion pump machine is mounted on one end of container body, and molecular pump machine is mounted on the bottom of container body; Diffusion pump unit comprises diffusion pump and the first forepump, and diffusion pump one end is connected with container body, and the diffusion pump the other end is connected with the first forepump by pipeline, and diffusion pump is provided with valve with the pipeline that the first forepump is connected; Molecular pump unit comprises molecular pump and the second forepump, and molecular pump one end is connected with container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.Wherein, molecular pump unit mainly vacuumizes the upper cavity of container body, and molecular pump unit mainly vacuumizes the coating film area of container body bottom; Use diffusion pump unit that exhaust capacity is large and molecular pump unit to combine container body is vacuumized, can guarantee to obtain high vacuum in whole container body, avoid using the phenomenon of the upper cavity vacuum degree deficiency that traditional vacuum device produces.
The utility model can be realized a kind of low temperature depositing flexible parent metal ITO film film coating method by said apparatus, comprises the following steps:
(1) workpiece conveying mechanism is sent into flexible parent metal in the base material winding mechanism in container body;
(2) starting fine pumping mechanism vacuumizes container body;
(3) vacuum tightness in container body reaches after predetermined vacuum level, starts base material winding mechanism, and flexible parent metal is unreeled to the transmission with rolling;
(5), after flexible parent metal unreels, first by ion source, flexible parent metal is carried out to ion surface processing;
(6), when flexible parent metal is sent to home roll place, by non-equilibrium medium frequency magnetron sputtering mechanism, carry out sputter, at flexible parent metal surface deposition ITO layer.
Wherein, in described step (6), non-equilibrium medium frequency magnetron sputtering mechanism carries out after sputter, if the ITO layer thickness on flexible parent metal surface does not reach the desired thickness of product, base material winding mechanism reversion, non-equilibrium medium frequency magnetron sputtering mechanism carries out secondary sputter to flexible parent metal surface.
Described flexible parent metal is high temperature material or non-refractory material; Non-refractory material is as PET etc.
The width of flexible parent metal is 300～2500mm, and the winding diameter of flexible parent metal is 200～1000mm.
At base material winding mechanism, transmit in the process of flexible parent metal, the first measuring roll or the second measuring roll can be controlled tension force and the speed that flexible parent metal transmits by external servomotor monitor speed mechanism.
The utility model, with respect to prior art, has following beneficial effect:
(1) in this low temperature depositing flexible parent metal ITO film film coating apparatus, sputtering system has been used non-equilibrium medium frequency magnetron sputtering technology, can realize the flexible ITO film of low temperature depositing high-quality.Without add a large amount of heater elements in device, not only reduced the manufacturing cost of equipment, and applicable to non-refractory, base material (as PET film) plated film cheaply.
(2) in this low temperature depositing flexible parent metal ITO film film coating apparatus, can control tension force and the speed that flexible parent metal transmits by servomotor monitor speed mechanism, because servomotor is a closed loop feedback system, it can monitor tension force and rotating speed accurately in real time, make that flexible parent metal tension force is moderate, rotating speed is mild, thereby improve film equality.
(3) in this low temperature depositing flexible parent metal ITO film film coating apparatus, base material winding mechanism is provided with ion source unreeling side, ion source ionized gas, and the ion that ionization is produced is attached to substrate surface, thereby improve the sticking power of substrate surface rete, improve the final product quality of flexible ITO film.
(4) in this low temperature depositing flexible parent metal ITO film film coating apparatus, the external cold-heat exchanger structure of home roll, constantly passes into circulating cooling liquid to home roll by cold-heat exchanger structure, can prevent flexible parent metal distortion in sputter coating process, guarantees quality product.
(5), in this low temperature depositing flexible parent metal ITO film film coating apparatus, adopt fine pumping mechanism to vacuumize container body.Due to traditional molecular pump during to plated film district pumping high vacuum, can produce the phenomenon of upper cavity vacuum degree deficiency, and flexible parent metal has phenomenon of deflation in sputter procedure, the diffusion pump unit that utilization exhaust capacity is large and molecular pump unit combine container body are vacuumized, and can guarantee acquisition high vacuum in whole container body.
Accompanying drawing explanation
Fig. 1 is the structural representation of this low temperature depositing flexible parent metal ITO film film coating apparatus;
Fig. 2 is the structural representation of non-equilibrium medium frequency magnetron sputtering mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
Fig. 3 is the structural representation of base material winding mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
Fig. 4 is the structural representation of fine pumping mechanism in this low temperature depositing flexible parent metal ITO film film coating apparatus;
Fig. 5 is structural representation during the external cold-heat exchanger structure of home roll in this low temperature depositing flexible parent metal ITO film film coating apparatus.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but embodiment of the present utility model is not limited to this.
A kind of low temperature depositing flexible parent metal of the present embodiment ITO film film coating apparatus, as shown in Figure 1, comprise and can realize base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body 1 rotating and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism 2 of input terminus of base material winding mechanism, as shown in Figure 5, the home roll 3 external cold-heat exchanger structures 14 in one end of base material winding mechanism.Wherein, workpiece conveying mechanism can adopt traditional film workpiece delivery system, and cold-heat exchanger structure can adopt traditional cold-heat exchanger group.
As shown in Figure 3, base material winding mechanism comprise successively connect unreel assembly, home roll 3 and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; According to the throughput direction of flexible parent metal, unreel assembly and comprise let off roll 4, the first deflector roll 5, the first measuring roll 6, the second deflector roll 7 and the 3rd deflector roll 8 connecting successively, rolling assembly comprises the 4th deflector roll 9, the 5th deflector roll 10, the second measuring roll 11, the 6th deflector roll 12 and the wind-up roll 13 connecting successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.Servomotor monitor speed mechanism can adopt traditional servomotor Speed Controller.
As shown in Figure 3, container body 1 is horizontal cylinder-like structure, and home roll is located in the space of container body bottom, and let off roll and wind-up roll are located at respectively in the space on container body top, non-equilibrium medium frequency magnetron sputtering mechanism is located at home roll below, and ion source is located on the container body inwall that unreels assembly outside.In the space of container body bottom, non-equilibrium medium frequency magnetron sputtering mechanism forms coating film area around.
As shown in Figure 2, non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets 15, midfrequent AC power supply 16 of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes 17; Each sputter cathode comprises respectively target 18, cathode 19 and magnet 20, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributing is side by side set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
Wherein, two sputter cathodes in cathode sets are twin arrangement architecture, and the magnet in two cathodes distributes side by side, but pole polarity between adjacent two magnet in different sputter cathodes is contrary.
In the present embodiment, when non-equilibrium medium frequency magnetron sputtering mechanism comprises two anticathode groups, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
Traditional magnetron sputtering deposition principle is: first on sputter cathode, add a high-voltage electric field, having realized vacuum discharge is glow discharge, impact due to magnetically confined electron motion, make electronics constantly produce collision with the working gas being filled with in container body, then produce ionization, form stable plasma discharge.Ion in plasma body is bombarding cathode target under the attraction of electric field, has realized the sputtering sedimentation of target.
And non-equilibrium medium frequency magnetron sputtering mechanism in this film coating apparatus, its principle of work is: adopt a midfrequent AC power supply of each cathode sets configuration, make two sputter cathodes positive and negative each other, form alternating electric field and magnetic field, expand plasma body region scope, add in addition unbalanced magnetic field to make closed magnetic field no longer be confined to single sputter cathode surface, but the closed loop space magnetic field in a large region of formation between many sputter cathodes has further expanded plasma area.Because plasma zone has covered substrate surface, simultaneously under the effect in alternating electric field and magnetic field, electronics in plasma body region shakes at a high speed motion, the continuous bombarding base material of electronics surface, thereby depositional coating is carried out to electronics bombardment and surface heating processing, improve the degree of crystallinity of rete, improve rete electroconductibility and visible region transmissivity.Therefore without to flexible parent metal heating, can realize the flexible ITO film that deposits better quality under cold condition.
As shown in Figure 4, fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and diffusion pump machine is mounted on one end of container body, and molecular pump machine is mounted on the bottom of container body; Diffusion pump unit comprises diffusion pump 21 and the first forepump 22, and diffusion pump one end is connected with container body 1, and the diffusion pump the other end is connected with the first forepump by pipeline 23, and the pipeline that diffusion pump is connected with the first forepump is provided with valve 24; Molecular pump unit comprises molecular pump 25 and the second forepump 26, and molecular pump one end is connected with container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.Wherein, molecular pump unit mainly vacuumizes the upper cavity of container body, and molecular pump unit mainly vacuumizes the coating film area of container body bottom; Use diffusion pump unit that exhaust capacity is large and molecular pump unit to combine container body is vacuumized, can guarantee to obtain high vacuum in whole container body, avoid using the phenomenon of the upper cavity vacuum degree deficiency that traditional vacuum device produces.
The present embodiment is realized a kind of low temperature depositing flexible parent metal ITO film film coating method by device described in embodiment 1, comprises the following steps:
(1) workpiece conveying mechanism is sent into flexible parent metal in the base material winding mechanism in container body;
(2) starting fine pumping mechanism vacuumizes container body;
(3) vacuum tightness in container body reaches after predetermined vacuum level, starts base material winding mechanism, and flexible parent metal is unreeled to the transmission with rolling;
(5), after flexible parent metal unreels, first by ion source, flexible parent metal is carried out to ion surface processing;
(6), when flexible parent metal is sent to home roll place, by non-equilibrium medium frequency magnetron sputtering mechanism, carry out sputter, at flexible parent metal surface deposition ITO layer.
Wherein, in step (6), non-equilibrium medium frequency magnetron sputtering mechanism carries out after sputter, if the ITO layer thickness on flexible parent metal surface does not reach the desired thickness of product, base material winding mechanism reversion, non-equilibrium medium frequency magnetron sputtering mechanism carries out secondary sputter to flexible parent metal surface.
Flexible parent metal is high temperature material or non-refractory material; Non-refractory material is as PET etc.
The width of flexible parent metal is 300～2500mm, and the winding diameter of flexible parent metal is 200～1000mm.
At base material winding mechanism, transmit in the process of flexible parent metal, the first measuring roll or the second measuring roll can be controlled tension force and the speed that flexible parent metal transmits by external servomotor monitor speed mechanism.
Thickness, percent crystallization in massecuite, resistivity, transmitance and the surface topography of the ITO film that aforesaid method is made carry out characterization test, and its percent crystallization in massecuite is high, and resistivity reaches 1.5 * 10
-4Ω cm, transmitance is greater than 80%, and uniformity coefficient is ± 5%.
In rolls in the process of mechanism driving flexible parent metal, ion source ionized gas (as oxygen, argon gas), and the ion that ionization is produced is attached to substrate surface, thus improve the sticking power of substrate surface rete, improve the final product quality of flexible ito thin film; Servomotor monitor speed mechanism monitors the first measuring roll and the second measuring roll, the voltage signal of the first measuring roll and the second measuring roll collection is converted into torque and rotational speed to drive the first measuring roll and second to detect, realize monitoring tension force and rotating speed in real time, make the moderate rotating speed of substrate tension mild, thereby improve film equality; Non-equilibrium medium frequency magnetron sputtering mechanism can cause that base material heats up during plated film, cold-heat exchanger structure is set and is communicated with home roll, and cold-heat exchanger structure constantly passes into circulating cooling liquid to home roll, prevents that flexible parent metal is out of shape.
As mentioned above, just can realize preferably the utility model, above-described embodiment is only preferred embodiment of the present utility model, is not used for limiting practical range of the present utility model; Be that all equalizations of doing according to the utility model content change and modify, all by the utility model claim scope required for protection, contained.
Claims (7)
1. a low temperature depositing flexible parent metal ITO film film coating apparatus, it is characterized in that, comprise and can realize base material winding mechanism, ion source, non-equilibrium medium frequency magnetron sputtering mechanism and the container body rotating and reverse, base material winding mechanism, ion source and non-equilibrium medium frequency magnetron sputtering mechanism are located at respectively in container body, ion source is located at the outside that unreels assembly in base material winding mechanism, and non-equilibrium medium frequency magnetron sputtering mechanism is located at the outside of home roll in base material winding mechanism; The external fine pumping of container body mechanism, the external workpiece conveying mechanism of input terminus of base material winding mechanism, the external cold-heat exchanger structure in home roll one end of base material winding mechanism.
2. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, is characterized in that, described base material winding mechanism comprise connect successively unreel assembly, home roll and rolling assembly, unreel the both sides that assembly and rolling assembly are symmetrically set in home roll; According to the throughput direction of flexible parent metal, unreel assembly and comprise let off roll, the first deflector roll, the first measuring roll, the second deflector roll and the 3rd deflector roll connecting successively, rolling assembly comprises the 4th deflector roll, the 5th deflector roll, the second measuring roll, the 6th deflector roll and the wind-up roll connecting successively, wherein, between the 3rd deflector roll and the 4th deflector roll, home roll is set, the respectively external servomotor monitor speed of the first measuring roll and the second measuring roll mechanism.
3. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 2, it is characterized in that, described container body is horizontal cylinder-like structure, home roll is located in the space of container body bottom, let off roll and wind-up roll are located at respectively in the space on container body top, non-equilibrium medium frequency magnetron sputtering mechanism is located at home roll below, and ion source is located on the container body inwall that unreels assembly outside.
4. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, is characterized in that, described non-equilibrium medium frequency magnetron sputtering mechanism comprises at least one pair of cathode sets, midfrequent AC power supply of every anticathode group separate configurations; Each cathode sets comprises respectively two sputter cathodes; Each sputter cathode comprises respectively target, cathode and magnet, target is fixed on cathode, cathode is located at the outside of home roll, and a plurality of magnet distributing is side by side set in cathode, the two poles of the earth end face of each magnet respectively with target and vertical connection of magnetic inductive block in cathode; Pole polarity between adjacent two magnet is contrary.
5. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 4, it is characterized in that, two sputter cathodes in described cathode sets are twin arrangement architecture, magnet in two cathodes distributes side by side, but pole polarity between adjacent two magnet in different sputter cathodes is contrary.
6. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 4, it is characterized in that, when described non-equilibrium medium frequency magnetron sputtering mechanism comprises multipair cathode sets, between two adjacent anticathode groups, the magnetic pole magnetic between the magnet in the cathode of adjacent two sputter cathodes is identical.
7. a kind of low temperature depositing flexible parent metal ITO film film coating apparatus according to claim 1, it is characterized in that, described fine pumping mechanism comprises diffusion pump unit and molecular pump unit, and diffusion pump machine is mounted on one end of container body, and molecular pump machine is mounted on the bottom of container body; Diffusion pump unit comprises diffusion pump and the first forepump, and diffusion pump one end is connected with container body, and the diffusion pump the other end is connected with the first forepump by pipeline, and diffusion pump is provided with valve with the pipeline that the first forepump is connected; Molecular pump unit comprises molecular pump and the second forepump, and molecular pump one end is connected with container body bottom, and the molecular pump the other end is connected with the second forepump; The first forepump and the second forepump are oil-sealed rotary pump.
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| CN201320510087.8U CN203487223U (en) | 2013-08-19 | 2013-08-19 | Coating device for depositing flexible base material ITO (Indium Tin Oxides) film at low temperature |
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| CN201320510087.8U CN203487223U (en) | 2013-08-19 | 2013-08-19 | Coating device for depositing flexible base material ITO (Indium Tin Oxides) film at low temperature |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404460A (en) * | 2014-11-12 | 2015-03-11 | 永州市新辉开科技有限公司 | ITO target material cathode seat optimization method |
| CN104513967A (en) * | 2015-01-07 | 2015-04-15 | 四川亚力超膜科技有限公司 | Magnetron sputtering winding coating machine for flexible substrate |
| CN104651791A (en) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | Energy-saving flexible transparent conducting film and preparation method thereof |
| CN105986237A (en) * | 2016-06-27 | 2016-10-05 | 广东腾胜真空技术工程有限公司 | Vacuum coating equipment with intelligent quality detection system |
-
2013
- 2013-08-19 CN CN201320510087.8U patent/CN203487223U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404460A (en) * | 2014-11-12 | 2015-03-11 | 永州市新辉开科技有限公司 | ITO target material cathode seat optimization method |
| CN104404460B (en) * | 2014-11-12 | 2017-03-15 | 永州市新辉开科技有限公司 | A kind of cathode block optimization method of ITO target |
| CN104513967A (en) * | 2015-01-07 | 2015-04-15 | 四川亚力超膜科技有限公司 | Magnetron sputtering winding coating machine for flexible substrate |
| CN104651791A (en) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | Energy-saving flexible transparent conducting film and preparation method thereof |
| CN105986237A (en) * | 2016-06-27 | 2016-10-05 | 广东腾胜真空技术工程有限公司 | Vacuum coating equipment with intelligent quality detection system |
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Granted publication date: 20140319 Termination date: 20200819 |