CN104313538A - Vacuum evaporation device and method - Google Patents
Vacuum evaporation device and method Download PDFInfo
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- CN104313538A CN104313538A CN201410659080.1A CN201410659080A CN104313538A CN 104313538 A CN104313538 A CN 104313538A CN 201410659080 A CN201410659080 A CN 201410659080A CN 104313538 A CN104313538 A CN 104313538A
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- evaporation
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- evaporation source
- evaporated device
- anode
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a vacuum evaporation device and method and belongs to the technical field of vacuum evaporation. The vacuum evaporation device comprises a vacuum evaporation cavity and an evaporation source in the vacuum evaporation cavity, the inside of the vacuum evaporation is further provided with a vacuum evaporation base used for holding a substrate needing vacuum evaporation, the opening of the evaporation source is towards the vacuum evaporation base, and the vacuum evaporation device further comprises a cathode arranged on the evaporation source side, an anode on the vacuum evaporation base side and an inert gas providing device used for inputting inert gas into the vacuum evaporation cavity. By means of the technical scheme, the utilization rate of materials for forming films can be improved in the vacuum evaporation process.
Description
Technical field
The present invention relates to vacuum evaporation technology field, refer to a kind of evaporated device and evaporation coating method especially.
Background technology
OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) display unit owing to having luminous, high without the need to backlight module, contrast gradient and sharpness, visual angle is wide, all solidstate, be applicable to a series of excellent specific properties such as flexibility panel, good temp characteristic, reduce power consumption, fast response time and low cost of manufacture, become one of prior development direction of flat display apparatus of new generation, therefore day by day receive increasing concern.
In prior art, the basic structure of OLED display device comprises anode layer, functional film layer and cathode layer etc.; Above-mentioned functions rete comprises: hole transmission layer, organic luminous layer and electron transfer layer etc.; Wherein, the film of organic luminous layer has a variety of, comprises evaporation film-forming method, molecular beam epitaxy, organic chemical vapor deposition method and sol-gel method etc.; Wherein, evaporation film-forming method due to have simple to operate, thickness easily controls, little and be easy to realize the advantage such as doping to the pollution of film, in prior art, the evaporation film-forming method that adopts forms the organic functions retes such as organic luminous layer more, namely under vacuum conditions, make it evaporate (distillation) organic materials heating, and deposit to functional film layer target base plate being formed correspondence.
As shown in Figure 1, existing vacuum evaporation equipment comprises evaporation chamber 3, evaporation source 4 and substrate 1 is provided with in evaporation chamber 3, substrate 1 is positioned at directly over evaporation source 4, and evaporation chamber 3 wall is provided with vacuum pumping hole 2, and vacuum pumping hole 2 is connected to the vacuum pump of outside, evaporation chamber 3, in vacuum evaporation process, evaporation source 4 evaporates the organic materials molecule of gasification to substrate 1, and make the organic materials molecule of gasification fly to film forming on substrate 1, in figure, the direction of arrow represents the flow direction of organic materials molecule.But the flow direction of organic materials molecule is isotropic, organic materials has a large amount of organic materialss to be evaporated on the wall of evaporation chamber 3 while being deposited on substrate 1, a large amount of organic materials is wasted, causes the utilization ratio of organic materials very low.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of evaporated device and evaporation coating method, can improve the utilization ratio of material to be filmed in evaporate process.
For solving the problems of the technologies described above, embodiments of the invention provide technical scheme as follows:
On the one hand, a kind of evaporated device is provided, comprises evaporation chamber and be arranged at the evaporation source in described evaporation chamber, in described evaporation chamber, being also provided with the evaporation base station for placing substrate to be deposited, the opening of described evaporation source is towards described evaporation base station, and described evaporated device also comprises:
Be arranged on the negative electrode of described evaporation source;
Be arranged on the anode of described evaporation base station side;
For inputting the rare gas element generator of rare gas element in described evaporation chamber.
Preferably, the material of described negative electrode adopts Mo.
Preferably, described evaporation source is rectangular parallelepiped, and described negative electrode is arranged on four sides of described evaporation source.
Preferably, described evaporation base station is between described anode and described evaporation source.
Preferably, described evaporated device also comprises the magnetic sheet for being placed on described substrate and the opposing side of described evaporation source, and described magnetic sheet is provided with described anode.
Preferably, described evaporated device also comprises the metal mask plate for being placed on described substrate side relative to described evaporation source.
Preferably, described metal mask plate is connected by wire with described anode.
The embodiment of the present invention additionally provides a kind of evaporation coating method, is applied to above-mentioned evaporated device, and described evaporation coating method comprises:
Described evaporation chamber is evacuated to high vacuum state, and utilizes described rare gas element generator to input rare gas element in described evaporation chamber;
Substrate to be deposited is sent in described evaporation chamber;
Between described anode and described negative electrode, produce high-frequency electric field, make described ionized inert gas produce inert gas ion and electronics;
Heat described evaporation source, the material to be filmed evaporated can adsorb described electronics and move to described anode, forms film at described substrate surface.
Preferably, described being sent to by substrate to be deposited in described evaporation chamber also comprises afterwards:
Contraposition is carried out to described substrate, described substrate is positioned on described evaporation base station.
Preferably, described evaporation source is organic material evaporating source, carries out heating comprise described evaporation source:
Described evaporation source is heated to 400 ~ 500 degree.
Embodiments of the invention have following beneficial effect:
In such scheme, evaporated device comprises evaporation chamber and is arranged at the evaporation source in evaporation chamber, evaporation source is provided with negative electrode, evaporation base station side for placing substrate to be deposited is provided with anode, when carrying out evaporation, high-frequency electric field is produced between anode and negative electrode, the ionized inert gas in evaporation chamber is made to produce inert gas ion and electronics, the species adsorbs to be filmed that electronics is evaporated by evaporation source, material to be filmed is subject to electric field action anode and moves, be confined to substrate surface formation of deposits film, thus greatly reduce the loss of material to be filmed, improve the utilization ratio of material to be filmed.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing vacuum evaporation equipment;
Fig. 2 is the schematic diagram of prior art when carrying out evaporation;
Fig. 3 is the structural representation in embodiment of the present invention evaporated device;
Fig. 4 is the schematic diagram of specific embodiment of the invention when carrying out evaporation.
Reference numeral
1 substrate 2 vacuum pumping hole 3 evaporation chamber 4 evaporation source
5 fine metal mask plate 6 organic materials molecule 7 magnetic sheet 8 negative electrodes
9 anode 10 Ar ion 11 electronics
Embodiment
For embodiments of the invention will be solved technical problem, technical scheme and advantage clearly, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiments of the invention in prior art when carrying out evaporation, the problem that the utilization ratio of organic materials is very low, provides a kind of evaporated device and evaporation coating method, can improve the utilization ratio of material to be filmed in evaporate process.
Embodiments provide a kind of evaporated device, comprise evaporation chamber and be arranged at the evaporation source in described evaporation chamber, also be provided with the evaporation base station for placing substrate to be deposited in described evaporation chamber, the opening of described evaporation source is towards described evaporation base station, and described evaporated device also comprises:
Be arranged on the negative electrode of described evaporation source;
Be arranged on the anode of described evaporation base station side;
For inputting the rare gas element generator of rare gas element in described evaporation chamber.
Evaporated device of the present invention comprises evaporation chamber and is arranged at the evaporation source in evaporation chamber, evaporation source is provided with negative electrode, evaporation base station side for placing substrate to be deposited is provided with anode, when carrying out evaporation, high-frequency electric field is produced between anode and negative electrode, the ionized inert gas in evaporation chamber is made to produce inert gas ion and electronics, the species adsorbs to be filmed that electronics is evaporated by evaporation source, material to be filmed is subject to electric field action anode and moves, be confined to substrate surface formation of deposits film, thus greatly reduce the loss of material to be filmed, improve the utilization ratio of material to be filmed.
The material require making negative electrode possesses the performances such as high temperature resistant, stable, and particularly, the material of negative electrode can adopt Mo.
Particularly, described evaporation source can be rectangular parallelepiped, and described negative electrode is arranged on four sides of described evaporation source.
Further, described evaporation base station is between described anode and described evaporation source.
Further, described evaporated device also comprises the magnetic sheet for being placed on described substrate and the opposing side of described evaporation source, and described magnetic sheet is provided with described anode.
Further, described evaporated device also comprises the metal mask plate for being placed on described substrate side relative to described evaporation source.
Further, described metal mask plate is connected by wire with described anode, by the charge-conduction that is deposited on substrate and metal mask plate on anode, can avoid substrate having charge accumulation produce reversed electric field like this.
The embodiment of the present invention additionally provides a kind of evaporation coating method, is applied to above-mentioned evaporated device, and described evaporation coating method comprises:
Described evaporation chamber is evacuated to high vacuum state, and utilizes described rare gas element generator to input rare gas element in described evaporation chamber;
Substrate to be deposited is sent in described evaporation chamber;
Between described anode and described negative electrode, produce high-frequency electric field, make described ionized inert gas produce inert gas ion and electronics;
Heat described evaporation source, the material to be filmed evaporated can adsorb described electronics and move to described anode, forms film at described substrate surface.
Further, described being sent to by substrate to be deposited in described evaporation chamber also comprises afterwards:
Contraposition is carried out to described substrate, described substrate is positioned on described evaporation base station.
Further, described evaporation source is organic material evaporating source, carries out heating comprise described evaporation source:
Described evaporation source is heated to 400 ~ 500 degree.
Below in conjunction with accompanying drawing and specific embodiment, evaporated device of the present invention and evaporation coating method are described in detail:
As shown in Figure 2, prior art is when forming the functional film layer of OLED, that substrate 1 to be deposited is placed on evaporation base station, substrate 1 is placed with fine metal mask plate 5 towards the side of evaporation source 4, the side that substrate 1 deviates from evaporation source 4 is placed with magnetic sheet 7, and magnetic sheet 7 can prevent fine metal mask plate 5 sagging and deposition pattern is out of shape.When evaporation, heating evaporation source 4, the organic materials molecule of gasification spreads, and film forming on substrate 1, but the flow direction of organic materials molecule is isotropic, organic materials has a large amount of organic materialss to be evaporated on the wall of evaporation chamber 3 while being deposited on substrate 1, a large amount of organic materials is wasted, causes the utilization ratio of organic materials very low.
In order to solve the problem, present embodiments provide a kind of evaporated device and evaporation coating method, can be used for making the functional film layer of OLED display device.This evaporated device comprises evaporation chamber and is arranged at the evaporation source in evaporation chamber, evaporation source can be crucible or evaporation boat, the evaporation base station for placing substrate to be deposited is also provided with in evaporation chamber, the opening of evaporation source is towards evaporation base station, as shown in Figure 3 and Figure 4, evaporated device also comprises: for inputting the rare gas element generator (not shown) of rare gas element in evaporation chamber; Be arranged on the negative electrode 8 of evaporation source 4 side, evaporation source 4 is linear evaporation source, and negative electrode 8 can be arranged on four sides of evaporation source 4, and negative electrode 8 adopts metal to make, and Mo specifically can be adopted to make; Be arranged on the anode 9 of evaporation base station side, anode 9 adopts metal to make.
As shown in Figure 4, after substrate 1 to be deposited enters evaporation chamber, the side that substrate 1 deviates from evaporation source 4 is disposed with magnetic sheet 7 and anode 9, and substrate 1 is provided with fine metal mask plate 5 towards the side of evaporation source 4, and fine metal mask plate 5 is connected with anode 9 by wire.
The evaporation coating method of the present embodiment comprises the following steps:
Step 11: evaporation chamber being evacuated to air pressure is 5.0*10
-5after following high vacuum state, in evaporation chamber, pass into rare gas element, particularly, Ar gas can be passed into;
Step 12: be sent in evaporation chamber by preloaded cavity by substrate 1, then carries out contraposition by alignment system to substrate 1 present position, makes substrate 1 be positioned on evaporation base station, prepares to carry out evaporation;
Step 13: produce high-frequency electric field between anode 9 and negative electrode 8, high-frequency electric field make Ar pneumoelectric from, produce Ar ion 10 and electronics 11.By adjusting the size of electric field, can obtain the plasma body of different capacity, the power of plasma body is determined by strength of electric field and current density, and particularly, in the present embodiment, the power of plasma body is 200W/m
2~ 1000W/m
2.Ar ion 10 moves to negative electrode 8 under electric field action, and electronics 11 continuous anode 9 under electric field action moves.After Ar ion 10 arrives negative electrode 8, and the electronics of negative electrode 8 combines, and regenerates Ar gas and gets back to the use of evaporation cavity circulation;
Step 14: heat evaporation source 4, the temperature of heating is generally 400 ~ 500 degree, and the organic materials in evaporation source 4 is evaporated by melting and the two kinds of modes that distil form vapor of organic material.Open the valve of evaporation source 4, organic materials starts evaporation, and vapor of organic material is in the process risen, organic materials molecule 6 meeting attract electrons 11, make organic materials molecule 6 charged, under the effect of electric field, anode 9 moves, and evaporation is now anisotropy evaporation.According to the direction of electric field, organic materials molecule 6 arrives substrate 1 surface, forms organic material film.
In order to prevent charge accumulation on substrate 1, anode 9 is connected by wire with fine metal mask plate 5 by the present embodiment, because organic materials can be deposited on substrate 1 with on fine metal mask plate 5 simultaneously, therefore electric charge can be transmitted to by the organic materials on substrate 1 on fine metal mask plate 5, finally be transmitted on anode 9, avoid substrate 1 having charge accumulation produce reversed electric field.
Step 15: linear evaporation source 4 shuttle-scanning once, completes evaporation.
The organic materials molecule of the present embodiment is subject to electric field action anode and moves, be confined to substrate surface formation of deposits organic material film, avoid a large amount of organic materialss to be evaporated on the baffle plate of evaporation chamber, improve the utilization ratio of organic materials, reduce the organic materials consuming cost of unit substrate.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. an evaporated device, comprise evaporation chamber and be arranged at the evaporation source in described evaporation chamber, be also provided with the evaporation base station for placing substrate to be deposited in described evaporation chamber, the opening of described evaporation source is towards described evaporation base station, it is characterized in that, described evaporated device also comprises:
Be arranged on the negative electrode of described evaporation source;
Be arranged on the anode of described evaporation base station side;
For inputting the rare gas element generator of rare gas element in described evaporation chamber.
2. evaporated device according to claim 1, is characterized in that, the material of described negative electrode adopts Mo.
3. evaporated device according to claim 1, is characterized in that, described evaporation source is rectangular parallelepiped, and described negative electrode is arranged on four sides of described evaporation source.
4. evaporated device according to claim 1, is characterized in that, described evaporation base station is between described anode and described evaporation source.
5. evaporated device according to claim 1, is characterized in that, described evaporated device also comprises the magnetic sheet for being placed on described substrate and the opposing side of described evaporation source, and described magnetic sheet is provided with described anode.
6. evaporated device according to claim 1, is characterized in that, described evaporated device also comprises the metal mask plate for being placed on described substrate side relative to described evaporation source.
7. evaporated device according to claim 6, is characterized in that, described metal mask plate is connected by wire with described anode.
8. an evaporation coating method, is applied to the evaporated device according to any one of claim 1-7, it is characterized in that, described evaporation coating method comprises:
Described evaporation chamber is evacuated to high vacuum state, and utilizes described rare gas element generator to input rare gas element in described evaporation chamber;
Substrate to be deposited is sent in described evaporation chamber;
Between described anode and described negative electrode, produce high-frequency electric field, make described ionized inert gas produce inert gas ion and electronics;
Heat described evaporation source, the material to be filmed evaporated can adsorb described electronics and move to described anode, forms film at described substrate surface.
9. evaporation coating method according to claim 8, is characterized in that, described being sent to by substrate to be deposited in described evaporation chamber also comprises afterwards:
Contraposition is carried out to described substrate, described substrate is positioned on described evaporation base station.
10. evaporation coating method according to claim 8, is characterized in that, described evaporation source is organic material evaporating source, carries out heating comprise described evaporation source:
Described evaporation source is heated to 400 ~ 500 degree.
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| CN201410659080.1A CN104313538B (en) | 2014-11-18 | 2014-11-18 | Evaporated device and evaporation coating method |
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| CN201410659080.1A CN104313538B (en) | 2014-11-18 | 2014-11-18 | Evaporated device and evaporation coating method |
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| CN104313538B CN104313538B (en) | 2018-09-21 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106148893A (en) * | 2016-08-11 | 2016-11-23 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and evaporation coating method, substrate |
| CN107017343A (en) * | 2016-01-27 | 2017-08-04 | 周卓辉 | The preparation method of organic element |
| CN108300962A (en) * | 2018-01-30 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | Evaporated device and evaporation coating method |
| CN108657819A (en) * | 2017-03-31 | 2018-10-16 | 京东方科技集团股份有限公司 | Transmission device, transfer approach and vacuum deposition apparatus |
| CN109652761A (en) * | 2019-01-30 | 2019-04-19 | 惠科股份有限公司 | Film coating method and film coating device |
| US20190237708A1 (en) * | 2018-01-30 | 2019-08-01 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Evaporation deposition equipment and evaporation deposition method |
| CN110137366A (en) * | 2018-06-22 | 2019-08-16 | 友达光电股份有限公司 | Light-emitting component and its manufacturing method |
| CN110344002A (en) * | 2019-06-11 | 2019-10-18 | 惠科股份有限公司 | Evaporation device and evaporation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605652A (en) * | 2004-09-09 | 2005-04-13 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
| CN101045988A (en) * | 2006-03-30 | 2007-10-03 | 甘国工 | Production apparatus for surface modification of metal plate and band |
| CN203034085U (en) * | 2012-12-24 | 2013-07-03 | 羽田电子科技(太仓)有限公司 | Improved evaporation coating machine |
-
2014
- 2014-11-18 CN CN201410659080.1A patent/CN104313538B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605652A (en) * | 2004-09-09 | 2005-04-13 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
| CN101045988A (en) * | 2006-03-30 | 2007-10-03 | 甘国工 | Production apparatus for surface modification of metal plate and band |
| CN203034085U (en) * | 2012-12-24 | 2013-07-03 | 羽田电子科技(太仓)有限公司 | Improved evaporation coating machine |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017343B (en) * | 2016-01-27 | 2019-04-02 | 周卓辉 | The production method of the organic layer of organic illuminating element |
| CN107017343A (en) * | 2016-01-27 | 2017-08-04 | 周卓辉 | The preparation method of organic element |
| CN106148893A (en) * | 2016-08-11 | 2016-11-23 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and evaporation coating method, substrate |
| CN106148893B (en) * | 2016-08-11 | 2019-04-05 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and evaporation coating method, substrate |
| CN108657819B (en) * | 2017-03-31 | 2019-10-01 | 京东方科技集团股份有限公司 | Transmission device, transfer approach and vacuum deposition apparatus |
| CN108657819A (en) * | 2017-03-31 | 2018-10-16 | 京东方科技集团股份有限公司 | Transmission device, transfer approach and vacuum deposition apparatus |
| US20190237708A1 (en) * | 2018-01-30 | 2019-08-01 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Evaporation deposition equipment and evaporation deposition method |
| CN108300962A (en) * | 2018-01-30 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | Evaporated device and evaporation coating method |
| US10541386B2 (en) | 2018-01-30 | 2020-01-21 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Evaporation deposition equipment and evaporation deposition method |
| CN110137366A (en) * | 2018-06-22 | 2019-08-16 | 友达光电股份有限公司 | Light-emitting component and its manufacturing method |
| CN110137366B (en) * | 2018-06-22 | 2021-12-07 | 友达光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN109652761A (en) * | 2019-01-30 | 2019-04-19 | 惠科股份有限公司 | Film coating method and film coating device |
| CN110344002A (en) * | 2019-06-11 | 2019-10-18 | 惠科股份有限公司 | Evaporation device and evaporation method |
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| CN104313538B (en) | 2018-09-21 |
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