CN110137366B - Light emitting element and method for manufacturing the same - Google Patents
Light emitting element and method for manufacturing the same Download PDFInfo
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- CN110137366B CN110137366B CN201910445287.1A CN201910445287A CN110137366B CN 110137366 B CN110137366 B CN 110137366B CN 201910445287 A CN201910445287 A CN 201910445287A CN 110137366 B CN110137366 B CN 110137366B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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Abstract
The invention discloses a light-emitting element and a manufacturing method thereof. The first electrode is disposed on the substrate. The polar light emitting layer is stacked on the first electrode. The material of the polar light emitting layer includes a field attractive material that can be attracted by physical field forces. The second electrode is configured on the substrate. The polar light-emitting layer is sandwiched between the first electrode and the second electrode. The light-emitting element of the invention has good performance.
Description
Technical Field
The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device having a polar light emitting layer and a method of manufacturing the same.
Background
In the process of an ORGANIC light emitting DIODE (ORGANIC LIGHT EMITTING DIODE; OLED) display device, an Ink Jet Printing process (IJP) may be used to form a light emitting layer. The inkjet printing process is to jet or inject droplets containing an organic light emitting material into openings defined by banks (banks) to form a light emitting layer. However, after the droplets are injected into the openings, a force (e.g., capillary phenomenon) is generated between the droplets and the banks, which causes unevenness in the thickness of the light-emitting layer formed after the organic light-emitting material is dried and solidified in the openings. For example, the film thickness of the light emitting layer at the edge of the opening is often significantly larger than the film thickness of the light emitting layer at the center of the opening, which affects the display quality of the display panel.
Disclosure of Invention
The invention aims to provide a light-emitting element with good performance.
It is another object of the present invention to provide a method for manufacturing a light-emitting element, which can manufacture a light-emitting element with excellent performance.
In order to achieve the above object, the present invention provides a light emitting device including a substrate, a first electrode, a polar light emitting layer, a second electrode, and a blocking structure. The first electrode is disposed on the substrate. The polar light emitting layer is stacked on the first electrode. The material of the polar light emitting layer includes a field attractive material that can be attracted by physical field forces. The second electrode is configured on the substrate. The polar light-emitting layer is sandwiched between the first electrode and the second electrode. The barrier structure is disposed on the substrate, surrounds the first electrode, and covers the sidewall of the first electrode, wherein the second electrode continuously covers the polar light-emitting layer and the barrier structure.
The material of the barrier structure comprises an organic insulating material or an inorganic insulating material.
The material of the barrier structure is an inorganic insulating material, and a height from the top surface of the barrier structure to the surface of the first electrode in a direction perpendicular to the substrate is 0.1 to 0.7 micrometers.
The material of the barrier structure comprises a positive photoresist material or a negative photoresist material.
Wherein, the material of the barrier structure is selected from silicon oxide, silicon nitride, silicon oxynitride or the combination thereof.
Wherein, the polar luminous layer and the barrier structure are integrally formed.
Wherein the field attractive material comprises a magnetically polarizable material.
Wherein the magnetically polarizable material is selected from at least one of iron, cobalt, nickel, or alloys thereof.
Wherein the material of the first electrode comprises the magnetic polarizable material.
Wherein the field attractive material comprises a first chemically polar material.
The material of the first electrode comprises a second chemical polar material, and one of the first chemical polar material and the second chemical polar material has a positively charged functional group and the other one has a negatively charged functional group.
The material of the polar light-emitting layer also comprises a light-emitting material, the light-emitting material comprises a quantum dot material, an organic light-emitting material or a combination thereof, and the field attraction material is mixed in the light-emitting material.
Wherein the light-emitting device further comprises at least one of a hole injection layer or a hole transport layer, and the material of the at least one of the hole injection layer or the hole transport layer comprises the field attractive material.
The present invention also provides a method for manufacturing a light-emitting element, including: forming a first electrode on a substrate; dropping a polar luminescent material on the first electrode by using a dropping device, wherein the polar luminescent material comprises a field attraction material, and a physical field force for attracting the polar luminescent material to concentrate towards the first electrode is generated between the dropping device and the first electrode during the dropping of the polar luminescent material; curing the polar light-emitting material dripped on the first electrode to form a polar light-emitting layer superposed on the first electrode; and forming a second electrode on the polar light-emitting layer.
And during the period of dripping the polar luminescent material, electrifying the first electrode to generate the physical field force suitable for attracting the polar luminescent material.
The method further comprises the step of placing the substrate on a carrier to drip the polar luminescent material, wherein the carrier is electrified to generate the physical field force suitable for attracting the polar luminescent material during the period of dripping the polar luminescent material.
And forming a barrier structure covering the periphery of the first electrode before the polar luminescent material is dripped, wherein the polar luminescent material is dripped in a space surrounded by the barrier structure.
Wherein the polar luminescent material instilled on the first electrode coats the side wall of the first electrode.
In view of the above, in the light emitting device and the manufacturing method thereof according to the embodiments of the invention, the polar light emitting layer is stacked on the first electrode, and the material of the polar light emitting layer includes a field attractive material capable of being attracted by a physical field force. In addition, in the method for manufacturing a light emitting device according to an embodiment of the invention, during the period of dispensing the polar light emitting material, a physical field force is generated between the dispensing device and the first electrode to attract the polar light emitting material to concentrate toward the first electrode. Therefore, the problem of uneven film thickness of the light-emitting layer of the light-emitting element is solved.
In order to make the aforementioned features and advantages of the present invention comprehensible, the present invention is described in detail below with reference to the accompanying drawings and specific examples, but without limiting the present invention thereto.
Drawings
Fig. 1A is a schematic diagram of a manufacturing method of a light emitting device according to an embodiment of the invention.
Fig. 1B is a schematic cross-sectional view of a light emitting device according to an embodiment of the invention.
Fig. 2 is a schematic view of a method for manufacturing a light-emitting element according to another embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a light-emitting device according to yet another embodiment of the invention.
Wherein, the reference numbers:
10. 20, 30: light emitting element
100: substrate
110: active element structure
110': active element structure layer
112: first conductive layer
114: second conductive layer
120: a first insulating layer
130: a second insulating layer
140: planarization layer
150. 250: a first electrode
160. 260, 360: barrier structure
160 a: space(s)
160o, 360 o: opening of the container
170: polar luminescent material
170', 270: polar light emitting layer
172. 272: hole injection layer
174. 274: hole transport layer
180. 280, 380: second electrode
200: instillation device
210: nozzle with a nozzle body
300: carrying platform
H: thickness of
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, without departing from the spirit or scope of the present invention.
In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected" to another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, an "electrical connection" or "coupling" may be the presence of other elements between the two elements.
Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" may include both an orientation of above and below.
As used herein, "about," "approximately," or "substantially" includes the average of the stated value and a specified value within an acceptable range of deviation of the stated value, as determined by one of ordinary skill in the art, given the particular number of measurements discussed and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated values, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etching properties or other properties to select a more acceptable range of deviation or standard deviation, and not to apply one standard deviation to all properties.
Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or (and/or) tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat may generally have rough and/or nonlinear features. Further, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A is a schematic diagram of a manufacturing method of a light emitting device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view of a light emitting device according to an embodiment of the invention.
Referring to fig. 1A, first, a substrate 100 is provided. In the present embodiment, the substrate 100 is, for example, a rigid substrate (rigid substrate). However, the invention is not limited thereto, and in other embodiments, the substrate 100 may be a flexible substrate. For example, the hard substrate may be made of glass, quartz or other suitable materials; the flexible substrate may be made of plastic or other suitable materials.
Here, the active device structure 110, the first insulating layer 120, the second insulating layer 130, the planarization layer 140, the first electrode 150, and the isolation structure 160 are formed on the substrate 100. In the present embodiment, the active device structure 110 is composed of a first conductive layer 112, a second conductive layer 114 and a semiconductor pattern (not shown), for example. For example, in the present embodiment, the first conductive layer 112 is formed on the substrate 100, wherein the first conductive layer 112 may be patterned to include a gate electrode for forming a thin film transistor. Next, a first insulating layer 120 is formed on the substrate 100 to cover the first conductive layer 112. Then, a second conductive layer 114 is formed over the first insulating layer 120, wherein the second conductive layer 114 can be patterned to include a source and a drain for forming a thin film transistor. In the present embodiment, before or after forming the second conductive layer 114, a semiconductor pattern (not shown) may be selectively formed on the first insulating layer 120; the source and the drain of the second conductive layer 114 may be electrically connected to two different regions of the semiconductor pattern, respectively. The first conductive layer 112, the second conductive layer 114, and the semiconductor pattern form a thin film transistor, for example, but not limited thereto. It should be noted that the method for forming at least a portion of the active device structure 110 is exemplified by forming a bottom gate type thin film transistor. However, the present invention is not limited thereto, and in other embodiments, at least a portion of the active device structure 110 may be a thin film transistor of other types and formed by other methods.
In the present embodiment, the second insulating layer 130 covers a portion of the active device structure 110 and the first insulating layer 120. The planarization layer 140 covers the active device structure 110 and the second insulating layer 130. The material of the planarization layer 140 includes inorganic materials (e.g., silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stack of at least two of the above materials), organic materials (e.g., Polyesters (PET), polyolefins, polyacryls, polycarbonates, polyalkylenes, polyphenylenes, polyethers, polyketones, polyols, polyaldehydes, other suitable materials, or combinations thereof), other suitable materials, or combinations thereof.
The first electrode 150 is disposed on the substrate 100. For example, in the present embodiment, the first electrode 150 may be formed on the planarization layer 140. The first electrode 150 may be electrically connected to the second conductive layer 114 of the active device structure 110. For example, the first electrode 150 of the present embodiment is, for example, a pixel electrode, and is electrically connected to the drain of the thin film transistor of the active device structure 110. That is, in the present embodiment, a portion of the second conductive layer 114 electrically connected to the first electrode 150 may be a drain. The material of the first electrode 150 includes a conductive oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or a stacked layer of at least two of the above. The first electrode 150 may be formed by stacking a plurality of conductive layers in some embodiments, such as conductiveOxide layer-silver-conductive oxide layer stack. However, the present invention is not limited thereto. For example, in other embodiments, the material of the first electrode 150 may also include a second chemically polar material, wherein the second chemically polar material has a positively charged functional group or a negatively charged functional group. Positively charged functional groups are, for example, amine groups (-NH 3)+) The negatively charged functional group is, for example, a carboxyl group (-COOH-), but is not limited thereto. In other embodiments, the material of the first electrode 150 may also include a magnetically polarizable material. Magnetically polarizable material refers to a material that is attracted to a magnetic field, such as iron, cobalt, nickel, or alloys thereof, or other suitable materials.
The barrier structure 160 may be disposed on the substrate 100. In the present embodiment, the barrier structure 160 is formed on the first electrode 150. In detail, the blocking structure 160 is disposed around the periphery of the first electrode 150 and covers the sidewall of the first electrode 150. The barrier structure 160 surrounds the periphery of the first electrode 150 and protrudes from the surface of the first electrode 150 away from the substrate 100 to define a space 160a, i.e., the barrier structure 160 has an opening 160o exposing the surface of the first electrode 150. In the present embodiment, the material of the barrier structure 160 includes an organic insulating material, but not limited thereto. For example, the organic material used to form the barrier structure 160 includes a positive photoresist material, a negative photoresist material, or other suitable materials. Thereafter, the polar light emitting material 170 is dropped on the first electrode 150 using the dropping device 200. For example, in the present embodiment, the drip device 200 may be an inkjet device having a nozzle 210. In the present embodiment, the polar light emitting material 170 may be dropped into the space 160a surrounded by the blocking structure 160 through the nozzle 210, and the polar light emitting material 170 is spread on the first electrode 150.
In the present embodiment, the polar light emitting material 170 may include a field attractive material, a light emitting material and a solvent. A field attractive material is a material that can be attracted by a physical field force to move in a particular direction. The light emitting material may include a quantum dot material, an organic light emitting material, and the like. The solvent is a material that can uniformly mix the field attractive material and the light emitting material and can be evaporated. During the dispensing of the polar luminescent material 170, a physical field force may be generated between the dispensing device 200 and the first electrode 150 that attracts the polar luminescent material 170 to be concentrated toward the first electrode 150. Thus, the polar light emitting material 170 can be uniformly spread on the first electrode 150 by the physical field force, and is not easy to spill out of the space 160a and form a meniscus (meniscus) due to a capillary phenomenon. In addition, the barrier structure 160 may have a lower height when made of an inorganic material, and the droplet of the polar light emitting material 170 may be higher than the height of the barrier structure 160. However, since the polar light emitting material 170 is attracted by the physical field force, it does not overflow out of the opening 160o of the barrier structure 160. Thus, such a design also helps to reduce the thickness of the final device. For example, the field attractive material includes a magnetically polarizable material, a first chemically polar material, or other suitable material. Magnetically polarizable material is a material that is attracted to a magnetic field and may be selected from at least one of iron, cobalt, nickel, or alloys thereof. Chemically polar materials refer to materials having charged functional groups.
When the field attractive material is a magnetically polarizable material, the first electrode 150 may be energized to generate a physical field force (e.g., an electromagnetic field) suitable for attracting the polar luminescent material 170, so that the polar luminescent material 170 is uniformly spread in the space 160 a. In other embodiments, when the polar light emitting material 170 is a chemically polar material and the chemically polar material added to the polar light emitting material 170 is a first chemically polar material having a positively charged functional group (or a negatively charged functional group), a second chemically polar material having a negatively charged functional group (or a positively charged functional group) may be added to the first electrode 150 during the fabrication of the first electrode 150, so that the second chemically polar material of the first electrode 150 may generate a physical field force that attracts the polar light emitting material 170 to be concentrated toward the first electrode 150.
Referring to fig. 1A and 1B, the polar light emitting material 170 deposited on the first electrode 150 is cured to form a polar light emitting layer 170' overlying the first electrode 150. In the present embodiment, the blocking structure 160 surrounds the polar light emitting layer 170'. That is, the polar light emitting layer 170' is disposed in the opening 160o of the blocking structure 160. In the present embodiment, the material of the polar light emitting layer 170' includes a light emitting material for emitting light and a field attractive material mixed in the light emitting material. The first electrode 150 generates a physical field force suitable for attracting the polar light-emitting material 170, so that the polar light-emitting layer 170' formed by curing the polar light-emitting material 170 has a uniform thickness.
In the present embodiment, a hole injection layer 172, a hole transport layer 174 or other layers may be further included between the polar light emitting layer 170' and the first electrode 150. The hole injection layer 172, the hole transport layer 174, and the polar light emitting layer 170' may be sequentially formed on the first electrode 150, but the present invention is not limited thereto. In this embodiment, the hole injection layer 172 and the hole transport layer 174 can also be formed by an inkjet process. In some embodiments, at least one of the hole injection layer 172 and the hole transport layer 174 may be formed on the first electrode 150 in the same manner as the polar light emitting layer 170' is formed on the first electrode 150, but not limited thereto. In other words, at least one of the hole injection layer 172 and the hole transport layer 174 may also include a field attractive material.
Next, the second electrode 180 is disposed on the substrate 100. Specifically, the second electrode 180 is formed on the polar light emitting layer 170'. The polar light emitting layer 170' is sandwiched between the first electrode 150 and the second electrode 180. In the present embodiment, the second electrode 180 may continuously cover the polar light emitting layer 170' and the blocking structure 160. In the present embodiment, the thickness of the second electrode 180 on the polar light emitting layer 170' and the blocking structure 160 is substantially equal. For example, in the present embodiment, the second electrode 180 is formed by, for example, an evaporation process, but the invention is not limited thereto.
In the present embodiment, an electron transport layer (not shown) and an electron injection layer (not shown) may be further included between the second electrode 180 and the polar light emitting layer 170'. The electron transport layer, the electron injection layer and the second electrode 180 may be sequentially formed on the polar light emitting layer 170', but the invention is not limited thereto. In the present embodiment, the electron transport layer and the electron injection layer may be formed on the polar light emitting layer 170 'in the same manner as the second electrode 180 is formed on the polar light emitting layer 170', but not limited thereto. In the embodiment, the composite layer structure composed of the electron transport layer, the electron injection layer and the second electrode 180 has substantially the same thickness, but the invention is not limited thereto.
Based on the above, in the method for manufacturing the light emitting device 10 according to the embodiment of the invention, the first electrode 150 may be electrified or a chemical polar material may be added to the first electrode 150, so that a physical field force that attracts the polar light emitting material 170 to be concentrated toward the first electrode 150 is generated between the instillation device 200 and the first electrode 150. Under such a physical field force, the polar light emitting material 170 may be uniformly spread on the first electrode 150 to reduce the meniscus phenomenon. Thus, the polar light-emitting layer 170' stacked on the first electrode 150 formed by curing the polar light-emitting material 170 deposited on the first electrode 150 can have a uniform film thickness. Therefore, the problem of poor light emitting effect caused by uneven thickness of the light emitting layer can be solved, and the quality of the light emitting element 10 is improved.
Fig. 2 is a schematic view of a method for manufacturing a light-emitting element according to another embodiment of the present invention. Fig. 2 omits illustration of the first conductive layer 112, the second conductive layer 114, and the first insulating layer 120 of fig. 1A, and the assembly is simply illustrated as an active device structure layer 110'. It should be noted that the embodiment of fig. 2 follows the element numbers and partial contents of the embodiment of fig. 1A, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
The main difference between the embodiment of fig. 2 and the embodiment of fig. 1A is that: the way in which the physical field force suitable for attracting the polar luminescent material 170 is generated is different.
Referring to fig. 2, in the present embodiment, a substrate 100 is placed on a carrier 300. For example, the active device structure layer 110', the second insulating layer 130, the planarization layer 140, the first electrode 150, and the isolation structure 160 may be formed on the substrate 100 in sequence, and then the substrate 100 is placed on the carrier 300. The structure of the active device structure layer 110' may be the active device structure 110 shown in fig. 1A, and is not described in detail herein.
In the present embodiment, the field attractive material included in the polar luminescent material 170 includes, for example, a magnetically polarizable material. During the period of dispensing the polar luminescent material 170 on the first electrode 150, the carrier 300 is energized to generate a physical field force (e.g., an electromagnetic field) suitable for attracting the polar luminescent material 170. Under such a physical field force, the droplets of the polar light emitting material 170 may be uniformly spread on the first electrode 150. Thus, the polar light emitting layer 170' (shown in fig. 1B) formed by curing the polar light emitting material 170 can have a uniform thickness, so that the problem of poor light emitting effect caused by the non-uniform thickness of the light emitting layer can be solved.
Fig. 3 is a schematic cross-sectional view of a light emitting device according to still another embodiment of the invention. It should be noted that the embodiment of fig. 3 follows the element numbers and partial contents of the embodiment of fig. 1B, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
The main difference between the embodiment of fig. 3 and the embodiment of fig. 1B is that: the polar light emitting layer 270 and the blocking structure 260 are integrally formed.
Referring to fig. 3, the light emitting device 20 includes a substrate 100, a first electrode 250, a polar light emitting layer 270, a second electrode 280, and a blocking structure 260. Here, the substrate 100 may further include an active device structure 110, a first insulating layer 120, a second insulating layer 130, a planarization layer 140, a hole injection layer 272, and a hole transport layer 274. The substrate 100, the active device structure 110, the first insulating layer 120, the second insulating layer 130 and the planarization layer 140 may be configured and manufactured as the light emitting device 10 in fig. 1B, which is not described herein again. In the light emitting device 20 of the present embodiment, the polar light emitting layer 270 and the blocking structure 260 are integrally formed, so that the second electrode 280 can extend from the polar light emitting layer 270 and the blocking structure 260 to the planarization layer 140. In addition, the polar light emitting layer 270 covers the surface of the first electrode 250, and the blocking structure 260 covers the sidewall of the first electrode 250. Thus, the polar light emitting layer 270 and the blocking structure 260 can be sandwiched between the first electrode 250 and the second electrode 280, so that the first electrode 250 and the second electrode 280 are separated from each other and do not contact each other.
In the present embodiment, the integrally formed polar light emitting layer 270 and the blocking structure 260 can be manufactured in the same manner as the polar light emitting layer 170'. For example, when the integrated polar light emitting layer 270 and the blocking structure 260 are manufactured, the first electrode 250 may be energized to generate a physical field force suitable for attracting the polar light emitting material. In this way, the polar light emitting material can be adsorbed on the first electrode 250 without overflowing the first electrode 250. In addition, the integrally formed polar light emitting layer 270 and the blocking structure 260 formed after the polar light emitting material is dried cover the surface of the first electrode 250 and cover the sidewall of the first electrode 250. In this embodiment, a physical field force may be generated to attract the polar light emitting material to concentrate toward the first electrode 250, so that the polar light emitting material is not easily spread to a region other than the first electrode 250, and the integrally formed polar light emitting layer 270 and the blocking structure 260 may be formed in a desired region. Therefore, the manufacturing process can be simplified, and the light emitting area can be enlarged to the whole area of the first electrode 250; in addition, the phenomenon of uneven thickness of the light emitting layer can be improved.
In the present embodiment, the integrally formed polar light emitting layer 270 and the blocking structure 260 may further include a hole injection layer 272, a hole transport layer 274 or other film layers between the first electrode 250 and the integrally formed polar light emitting layer. The hole injection layer 272 and the hole transport layer 274 cover the surface of the first electrode 250 and cover the sidewalls of the first electrode 250. In this embodiment, the hole injection layer 272 and the hole transport layer 274 can also be formed by an inkjet process. Therefore, the hole injection layer 272 and the hole transport layer 274 may be formed on the first electrode 150 in the same manner as the integrally formed polar light emitting layer 270 and the blocking structure 260 are formed on the first electrode 150, but not limited thereto. In other words, the hole injection layer 272 and the hole transport layer 274 may also include a field attractive material, such that the field attractive material is not easily spread to regions other than the first electrode 250 by generating a physical field force that attracts the field attractive material toward the first electrode 250 during the fabrication of these layers, such that the hole injection layer 272 and the hole transport layer 274 may be formed in desired regions. Therefore, the design of the present embodiment can omit the aforementioned barrier structure 160 made of a material different from that of the light emitting layer.
Fig. 4 is a schematic cross-sectional view of a light-emitting device according to yet another embodiment of the invention. It must be noted here that the embodiment of fig. 4 is similar to the embodiment of fig. 1B. Accordingly, the reference numerals of the components of the embodiment of FIG. 1B are used in FIG. 4, i.e., the same or similar reference numerals are used in both embodiments to indicate the same or similar components. For the description of the relevant parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
The main difference between the embodiment of fig. 4 and the embodiment of fig. 1B is that: the thickness H of the barrier structure 360 is small.
Referring to fig. 4, the light emitting device 30 includes a substrate 100, a first electrode 150, a polar light emitting layer 170', a second electrode 380, and a blocking structure 360. Here, the substrate 100 may further include an active device structure 110, a first insulating layer 120, a second insulating layer 130, a planarization layer 140, a hole injection layer 172, and a hole transport layer 174. Except for the blocking structure 360, the configuration and manufacturing method of the above components may be as shown in the light emitting device 10 of fig. 1B, which is not described herein again.
The blocking structure 360 is disposed around the periphery of the first electrode 150 and covers the sidewall of the first electrode 150. The barrier structure 360 has an opening 360o exposing a surface of the first electrode 150. In a direction perpendicular to the substrate 100, a height H is provided between a top surface of the barrier structure 360 and a surface of the first electrode 150. In the present embodiment, the material of the barrier structure 360 includes an inorganic insulating material, but not limited thereto. For example, the inorganic insulating material used for forming the barrier structure 360 may be selected from silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, but is not limited thereto. The height H of the barrier structure 360 made of an inorganic insulating material is 0.1 to 0.7 micrometers. The height H of the barrier structures 360 made of inorganic material is smaller than the height H of the barrier structures 160 made of organic material (typically 1 to 5 microns).
In the embodiment, the material for manufacturing the polar light emitting layer 170' includes a polar light emitting material, and the polar light emitting material can be uniformly spread on the first electrode 150 under the action of the physical field force, and is not easy to spill over the opening 360o and form a meniscus due to a capillary phenomenon. In the present embodiment, the barrier structure 360 made of an inorganic insulating material has a lower height, so that the droplet of the polar light emitting material may be higher than the height H of the barrier structure 360. However, since the polar light emitting material is attracted by the physical field force through the first electrode 150, it does not easily overflow out of the opening 360o of the barrier structure 360. Thus, the polar light emitting layer 170' formed by curing the polar light emitting material can be reliably disposed in the opening 360o of the blocking structure 360 and has a uniform thickness. In addition, the barrier structure 360 made of an inorganic material has a lower height, so that the difference between the height of the region where the barrier structure 360 is located and the height of the region where the polar light emitting layer 170 'is located is less obvious, which is helpful for improving the flatness of the region where the polar light emitting layer 170' is located and the overall uniformity of the light emitting device, and is also helpful for reducing the thickness of the final device.
In summary, the light emitting device and the manufacturing method thereof according to the embodiments of the invention include a substrate, a first electrode, a polar light emitting layer, and a second electrode. The first electrode is disposed on the substrate. The polar light emitting layer is stacked on the first electrode. The material of the polar light emitting layer includes a field attractive material that can be attracted by physical field forces. The second electrode is configured on the substrate. The polar light-emitting layer is sandwiched between the first electrode and the second electrode. By generating a physical field force between the dripping device and the first electrode to attract the polar luminescent material to concentrate towards the first electrode in the method for manufacturing the luminescent element, the thickness of the luminescent layer can have better uniformity, thereby being beneficial to improving or ensuring the quality of the luminescent element.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto. The present invention is capable of other embodiments, and various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (15)
1. A light-emitting element characterized by comprising:
a substrate;
a first electrode disposed on the substrate;
a polar light emitting layer overlying the first electrode, wherein the polar light emitting layer comprises a field attractive material capable of being attracted by a physical field force, the field attractive material comprising a magnetically polarizable material;
a second electrode disposed on the substrate, wherein the polar light-emitting layer is sandwiched between the first electrode and the second electrode; and
and the barrier structure is arranged on the substrate, is arranged around the first electrode and covers the side wall of the first electrode, and the second electrode continuously covers the polar light-emitting layer and the barrier structure.
2. The light-emitting element according to claim 1, wherein a material of the barrier structure comprises an organic insulating material or an inorganic insulating material.
3. The light-emitting device according to claim 2, wherein the barrier structure is made of an inorganic insulating material, and a height from the top surface of the barrier structure to the surface of the first electrode in a direction perpendicular to the substrate is 0.1 to 0.7 μm.
4. The light-emitting device according to claim 2, wherein the material of the barrier structure comprises a positive photoresist material or a negative photoresist material.
5. The light-emitting device according to claim 2, wherein the barrier structure is made of a material selected from silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
6. The light-emitting element according to claim 1, wherein the polar light-emitting layer and the barrier structure are integrally formed.
7. The light-emitting element according to claim 1, wherein the magnetically polarizable material is selected from at least one of iron, cobalt, nickel, or an alloy thereof.
8. The light-emitting element according to claim 1, wherein a material of the first electrode comprises the magnetically polarizable material.
9. The light-emitting device of claim 1, wherein the material of the polar light-emitting layer further comprises a light-emitting material, the light-emitting material comprises a quantum dot material, an organic light-emitting material or a combination thereof, and the field-attracting material is mixed in the light-emitting material.
10. The light-emitting device of claim 1, further comprising at least one of a hole injection layer or a hole transport layer, wherein the material of the at least one of the hole injection layer or the hole transport layer comprises the field-attractive material.
11. A method for manufacturing a light-emitting element, comprising:
forming a first electrode on a substrate;
dropping a polar luminescent material on the first electrode by using a dropping device, wherein the polar luminescent material comprises a field attraction material, and a physical field force attracting the polar luminescent material to be concentrated towards the first electrode is generated between the dropping device and the first electrode during dropping the polar luminescent material, and the field attraction material comprises a magnetically polarizable material;
curing the polar light-emitting material dripped on the first electrode to form a polar light-emitting layer superposed on the first electrode; and
forming a second electrode on the polar light-emitting layer.
12. The method of claim 11, wherein the physical field force suitable for attracting the polar light-emitting material is generated by applying current to the first electrode during the period of dropping the polar light-emitting material.
13. The method of claim 11, further comprising placing the substrate on a carrier for dispensing the polar light-emitting material, wherein during the dispensing of the polar light-emitting material, the carrier is energized to generate the physical field force suitable for attracting the polar light-emitting material.
14. The method of claim 11, further comprising forming a barrier structure covering a periphery of the first electrode before dispensing the polar light-emitting material, wherein the polar light-emitting material is dispensed in a space surrounded by the barrier structure.
15. The method of claim 14, wherein the polar light-emitting layer is integrally formed with the barrier structure, the polar light-emitting layer covers a surface of the first electrode, and the barrier structure covers a sidewall of the first electrode.
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| TW108106211 | 2019-02-25 | ||
| TW108106211A TWI680589B (en) | 2018-06-22 | 2019-02-25 | Light-emitting device and manufacturing method thereof |
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