CN109023273B - Coating equipment and coating method - Google Patents
Coating equipment and coating method Download PDFInfo
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- CN109023273B CN109023273B CN201810884395.4A CN201810884395A CN109023273B CN 109023273 B CN109023273 B CN 109023273B CN 201810884395 A CN201810884395 A CN 201810884395A CN 109023273 B CN109023273 B CN 109023273B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a coating device and a coating method, wherein the coating device comprises a vacuum chamber (1), a target base (11) and a substrate clamp (12) which are arranged in the vacuum chamber (1), wherein the target base (11) is arranged above the substrate clamp (12); also comprises an electrode switching device (13); the electrode switching device (13) is connected with the target base (11), and the number of the target bases (11) is even. The invention realizes that the positively charged plasmas bombard the sputtering target with the electric polarity being the cathode in turn in the film plating process by alternately changing the electric polarities of the sputtering target, thereby avoiding the 'poisoning' of the sputtering target caused by long-time bombarding the same sputtering target, avoiding the failure of the sputtering target in the film plating process, effectively prolonging the service life of the sputtering target and further improving the film plating efficiency of film plating equipment.
Description
Technical Field
The present invention relates to a film plating apparatus and a film plating method, and more particularly, to a film plating apparatus and a film plating method for an optical filter.
Background
Along with the development of technology, the functions of face recognition, gesture recognition and the like are gradually embedded in terminal applications such as smart phones, vehicle-mounted laser radars, security access control, smart home, virtual reality/augmented reality/mixed reality, 3D somatosensory games, 3D shooting and display and the like. Correspondingly, a near infrared narrow band filter is needed to realize the functions, and can play a role in preventing near infrared rays in the copper belt and stopping visible rays in the environment. Typically, near infrared narrowband filters include two film systems, an IR bandpass film system and a long-pass AR film system, respectively. Traditional membrane material and vacuum evaporation coating mode are difficult to satisfy emerging market demand, consequently, the filter in the prior art is relatively poor to near infrared ray's anti-reflection effect and the effect of stopping visible light, the skew appears in the light signal passband that is captured by infrared sensor sensitivity to the reflection of shot object or emission light in a great angle range, lead to signal noise increase, and then arouse discernment unusual, thereby lead to assembling the filter to devices such as face identification, gesture recognition, imaging effect is relatively poor, recognition accuracy is not high, moreover, the production efficiency of near infrared narrowband filter is low in the conventional art, be difficult to satisfy the market demand of growing.
Disclosure of Invention
The invention aims to provide a coating device and a coating method, which solve the problem of low production efficiency of an optical filter.
In order to achieve the above object, the present invention provides a coating apparatus, including a vacuum chamber, a target base and a substrate holder, wherein the target base and the substrate holder are disposed in the vacuum chamber, and the target base is disposed above the substrate holder; the device also comprises an electrode switching device;
the electrode switching device is connected with the target material bases, and the number of the target material bases is even.
According to one aspect of the invention, the target base is provided with a linear displacement device;
and the linear displacement device drives the target base to reciprocate along the vertical direction.
According to one aspect of the present invention, further comprising: the radio frequency generator is arranged in the vacuum chamber, adjacent to the target base and used for providing and enhancing the plasma movement speed at the position of the target base, and the alternating magnetic field device is arranged outside the vacuum chamber and opposite to the target base.
According to one aspect of the present invention, further comprising: the ion source and the air extracting device are arranged on the vacuum chamber, and are used for introducing air into the vacuum chamber, and the air outlet pipe is used for extracting the air in the vacuum chamber;
the gas inlet pipe comprises a first gas inlet pipe for conveying inert gas and a second gas inlet pipe for introducing reaction gas.
According to one aspect of the invention, the air inlet pipe is arranged opposite to the air outlet pipe.
According to one aspect of the invention, the electrode switching device is an alternating current electrode switching device.
In order to achieve the above object, the present invention provides a plating method comprising:
s1, respectively mounting a sputtering target and a substrate in a vacuum chamber, and controlling the pressure in the vacuum chamber to be a preset pressure value;
s2, introducing inert gas into the vacuum chamber, and bombarding the surfaces of the sputtering target and the substrate to be pretreated after ionizing the inert gas;
s3, introducing reaction gas into the vacuum chamber, and plating a film layer on the substrate, wherein the electric polarity of the sputtering target is alternately changed in a preset period.
According to one aspect of the invention, the inert gas and the reactive gas are introduced at a volumetric flow rate of less than 120sccm.
According to one aspect of the invention, the inert gas is argon and the reactant gas is hydrogen or oxygen;
if the reaction gas is hydrogen, the volume flow of the argon and the hydrogen is more than or equal to 0.2 and less than or equal to V H2 /V Ar Less than or equal to 0.5, wherein the V H2 Is the volume flow of hydrogen, the V Ar Is the volume flow of argon.
According to one aspect of the present invention, in step S3, when a film is coated on the substrate, the sputtering reaction temperature is 80 ℃ to 300 ℃, and the sputtering rate V satisfies: v is more than or equal to 0.1nm/s and less than or equal to 1nm/s.
According to one aspect of the present invention, in step S3, the film layer includes an IR band-pass film layer and an AR long-wave pass film layer, which are respectively plated on two opposite sides of the substrate;
the IR band-pass film layer and the AR long-wave pass film layer are respectively formed by alternately plating two or three of a first refractive index material, a second refractive index material and a third refractive index material, wherein the refractive index of the first refractive index material is smaller than 3, the refractive index of the second refractive index material is larger than 3, and the refractive index of the third refractive index material is smaller than 4.
According to one aspect of the invention, a layer of the IR band-pass film layer and the AR long-wave pass film layer, which are respectively connected with the substrate, is plated with the first refractive index material or the third refractive index material;
and one layer of the IR band-pass film layer and the AR long-wave pass film layer, which is respectively close to the incident medium, is plated by adopting the first refractive index material or the third refractive index material.
According to one aspect of the invention, the first refractive index material is Nb 2 O 5 、Ta 2 O 5 、TiO 2 、SiO 2 、ZrO 2 、Si 2 N、SiN、Si 2 N 3 、Si 3 N 4 One or a mixture of more than one of them.
According to one aspect of the invention, the second refractive index material is silicon hydride.
According to the scheme of the invention, the electric polarities of the sputtering targets can be alternately changed by an even number of targets, so that the sputtering targets with the electric polarities being cathodes are alternately bombarded by positively charged plasmas in the film coating process, the phenomenon that the sputtering targets are poisoned due to long-time bombardment of the same sputtering target is avoided, the failure of the sputtering targets in the film coating process is avoided, the service life of the sputtering targets is effectively prolonged, the film coating production can be continuously carried out by the equipment, and the film coating efficiency of the film coating equipment is further improved.
According to the scheme of the invention, atoms on the target are sputtered on the surface of the substrate, the sputtering reaction temperature is 80-300 ℃, the sputtering rate is set in the range of 0.1nm/s less than or equal to V less than or equal to 1nm/s, and the jitter characteristic of a rotating system where the substrate clamp is positioned can be better matched, so that the disk difference of the substrate borne on the substrate clamp is less than 6nm, the adhesion of the atoms on the substrate is more uniform, the thickness of a coating film on the substrate is further uniform, the coating film effect is better, and the coating film performance is better.
According to one scheme of the invention, the volume flow rate of argon, hydrogen and oxygen into the vacuum chamber is set to be less than 120sccm, and when the reaction gas is hydrogen, the volume flow rate of the argon and the hydrogen meets 0.2.ltoreq.V H2 /V Ar The stress of the coated product can be effectively improved in the process of coating the film layer, so that the internal structure of the coated film layer is more stable, the defects of poor uniformity, film breakage, stripping after glue adhesion and the like caused by bending of the coated film stress are overcome, the product performance and yield are improved, and the service life and the use effect of the film layer are further ensured.
According to the scheme of the invention, the ion source (the inert gas is ionized and then bombards the surfaces of the sputtering target and the substrate, so that impurities on the surfaces of the sputtering target and the substrate are effectively removed, the cleanliness of the surfaces of the sputtering target and the substrate in the film plating process is ensured, the quality of a film plated on the substrate is improved, and the adhesion of the substrate to film atoms can be improved.
According to one scheme of the invention, a more densely deposited film layer is formed on a substrate, so that the film layer has better adhesive force, stronger hardness and scratch resistance; with higher deposition rates, smooth and planar boundary layers and amorphous layer structures are formed, and therefore with lower scattering or absorption losses. The near infrared narrowband filter manufactured by the method can greatly reduce the drift amount of the center wavelength of the passband of the narrowband filter along with the angle under the premise of high transmittance, improve the steepness of a transition region of the narrowband filter, improve the signal-to-noise ratio in a face recognition and gesture recognition system, reduce the total thickness of a film layer and the total time of film coating, reduce the production cost and save the use cost for terminal customers.
Drawings
FIG. 1 schematically shows a structure of a plating apparatus according to an embodiment of the present invention;
FIG. 2 schematically illustrates the inert gas volume flow versus coating stress according to one embodiment of the invention;
FIG. 3 schematically illustrates a block diagram of a near infrared narrowband filter plated according to one embodiment of the invention;
fig. 4 schematically illustrates a graph of the transmittance versus wavelength for a near infrared narrowband filter plated in accordance with one embodiment of the invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
In describing embodiments of the present invention, the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in terms of orientation or positional relationship shown in the drawings for convenience of description and simplicity of description only, and do not denote or imply that the devices or elements in question must have a particular orientation, be constructed and operated in a particular orientation, so that the above terms are not to be construed as limiting the invention.
The present invention will be described in detail below with reference to the drawings and the specific embodiments, which are not described in detail herein, but the embodiments of the present invention are not limited to the following embodiments.
As shown in fig. 1, according to an embodiment of the present invention, a plating apparatus of the present invention includes a vacuum chamber 1, a target base 11, a substrate holder 12, and an electrode switching device 13 disposed in the vacuum chamber 1. In the present embodiment, the target base 11 is disposed above the substrate holder 12 so as to face the substrate holder 12. In the present embodiment, the number of target susceptors 11 is an even number, and the electrode switching devices 13 are connected to the target susceptors 11. Through the switching action of the electrode switching device 13, the cathodes can be conveniently and rapidly displayed on different target bases 11. In the present embodiment, the electrode switching device 13 is an ac electrode switching device.
According to one embodiment of the present invention, a linear displacement device is provided on the target base 11. In the present embodiment, the linear displacement device drives the target base 11 to reciprocate up and down in the vertical direction (i.e., the longitudinal direction in fig. 1). The accurate adjustment of the distance between the target base 11 and the substrate clamp 12 is realized through the linear displacement device, so that the flexible adjustment of the position of the target base 11 in the coating process is facilitated.
As shown in fig. 1, a plating apparatus of the present invention further includes a radio frequency generator 14 (RF generator 14) according to an embodiment of the present invention. In this embodiment, the rf generator 14 is disposed adjacent to the target base 11 on one side of the target base 11, and during operation, the rf generator 14 can provide and enhance the moving speed of the plasma, so as to enhance the density of the plasma at the position of the target base 11, thereby further improving the sputtering rate and improving the film forming quality of the substrate.
As shown in fig. 1, according to an embodiment of the present invention, a coating apparatus of the present invention further comprises an alternating magnetic field device 19. In the present embodiment, the alternating magnetic field device 19 is located outside the vacuum chamber 1 and is disposed opposite to the target base 11. In the process of sputtering coating the substrate b on the substrate holder 12 according to the present invention, the sputtering target a on the target base 11 is a cathode, and the substrate on the substrate holder 12 is an anode, so that the electric field for accelerating the plasma is provided on the target base 11 and the substrate holder 12, and the moving direction of the passing plasma is changed by the alternating magnetic field device 19, so that the plasma can bombard the sputtering target a or the substrate b. The alternating magnetic field device 19 generates an electromagnetic field to guide the plasma to bombard the surface of the target material or the substrate for pretreatment. And in the film coating process, the quality of the film layer can be improved through plasma.
As shown in fig. 1, according to an embodiment of the present invention, a coating apparatus of the present invention further includes an ion source 15, an air extraction device 16, an air inlet pipe 17, and an air outlet pipe 18. In the present embodiment, the ion source 15 and the air extracting device 16 are fixedly installed on the side wall of the vacuum chamber 1, and are respectively communicated with the inside of the vacuum chamber 1. The inert gas introduced into the vacuum chamber 1 is ionized by the ion source 15 to generate a plasma having positive charges. In this embodiment, the ion source 15 may be a radio frequency ion source. In the present embodiment, the evacuation device 16 is used to control the gas pressure in the vacuum chamber. In the present embodiment, the air extracting device 16 may be a vacuum pump. During operation of the invention, the evacuation device 16 evacuates the vacuum chamber to control the pressure in the vacuum chamber 1 to be maintained at a set pressure value. In this embodiment, along the transverse direction in fig. 1, the rf generator 14 is located between the ion source 15 and the target base 11, so that it is ensured that the rf generator 14 can accelerate the plasma generated by the ion source 15 in time, so that the acceleration time is prolonged, and further the bombardment effect on the sputtering target a is improved. Meanwhile, through the arrangement, the plasma generated by the ion source 15 is accelerated into high-energy plasma through the radio frequency generator, and the target is bombarded under the action of an electric field between the substrate b and the sputtering target a under the action of an alternating magnetic field of the alternating magnetic field device 19, so that the alternating magnetic field device 19 can fully control the direction of the plasma accelerated by the radio frequency generator 14, and the method is further beneficial for improving the coating quality in the coating process.
As shown in fig. 1, the intake pipe 17 includes a first intake pipe 171 and a second intake pipe 172 according to an embodiment of the present invention. In the present embodiment, the first gas inlet pipe 172 communicates with the interior of the vacuum chamber 1 for supplying inert gas, and the second gas inlet pipe 172 communicates with the interior of the vacuum chamber 1 for supplying reactive gas. Since the reactive gases adopted in the film plating process have multiple types (such as two types), the second air inlet pipes 172 are arranged corresponding to the types of the reactive gases, and the uniformity of the gas conveyed by each second air inlet pipe 172 is ensured by arranging the second air inlet pipes 172 corresponding to the reactive gases, so that the mixing of the reactive gases is avoided, and the film plating quality and the working efficiency are ensured. In the present embodiment, the air inlet pipe 17 is disposed opposite to the air outlet pipe 18, and by disposing the air inlet pipe 17 opposite to the air outlet pipe 18, it is ensured that the excessive air entering the vacuum chamber 1 can be timely drawn out from the air outlet pipe 18. Through the relative arrangement of the air inlet pipe 17 and the air outlet pipe 18, the relative distance between the air inlet pipe 17 and the air outlet pipe 18 is short, so that the flow path of the gas in the process from flowing into the vacuum chamber 1 to flowing out of the vacuum chamber 1 is short, the influence of the flowing of the reaction gas in the vacuum chamber on the coating is avoided, and the coating quality is further improved. In this embodiment, the air inlet pipe 17 is disposed at one side of the target base 11, and the air outlet pipe 18 is disposed at one side of the base clamp 12, so that the influence of the air input and extraction to the vacuum chamber 1 on the film plating is further avoided, and the film plating quality is further improved.
According to an embodiment of the present invention, a plating method of the present invention includes:
s1, respectively installing a sputtering target a and a substrate b in a vacuum chamber 1, and controlling the pressure in the vacuum chamber 1 to be a preset pressure value. In the present embodiment, the sputtering target a is mounted on the target base 11 in the vacuum chamber 1, and in the present embodiment, the sputtering target a may be a silicon target or a niobium target, but may be other materials as appropriate. A substrate b to be coated with a film is mounted on the base jig 12. The linear displacement device on the target base 11 is controlled to adjust the position of the target base 11. The power supply of the air extractor 16 is connected, the air extractor 16 is used for extracting air from the vacuum chamber 1, so that the pressure value in the vacuum chamber 1 reaches a preset pressure value, and the operation is stopped.
S2, introducing inert gas into the vacuum chamber 1, and bombarding the surfaces of the sputtering target material a and the substrate b for pretreatment after ionizing the inert gas. In the present embodiment, the first gas inlet pipe 171 communicates with an inert gas source, and an inert gas is introduced into the vacuum chamber 1. In this embodiment, the volume flow rate of the inert gas is less than 120sccm. The ion source 15 is operated to ionize the incoming inert gas to produce a positively charged plasma. In the present embodiment, the high-energy plasma around the target base 11 is supplied and enhanced by the rf generator 14, and bombarded on the surfaces of the sputtering target a and the substrate b by the alternating magnetic field device 19, respectively, to remove impurities (e.g., water, oxide, and other impurities) on the surfaces of the sputtering target a and the substrate b, and the removed impurities are extracted from the outlet pipe 18. In this embodiment, the inert gas is argon, but may be other inert gases, and the inert gas may be replaced according to actual situations. The surface of the sputtering target and the surface of the substrate are bombarded after the inert gas is ionized, so that impurities on the surfaces of the sputtering target and the substrate are effectively removed, the cleanliness of the surfaces of the sputtering target and the substrate in the film plating process is ensured, the quality of a film plated on the substrate is improved, and the adhesive force of the substrate to film atoms can be improved.
S3, introducing reaction gas into the vacuum chamber 1, and plating a film layer on the substrate, wherein the electric polarity of the sputtering target material a is alternately changed in a preset period. In the present embodiment, when the pretreatment process for the surface of the sputtering target a and the surface of the substrate b is completed at predetermined time intervals, the reaction gas is further introduced into the vacuum chamber 1 through the second gas inlet pipe 172, and the film plating on the surface of the substrate b is started. In this embodiment, the inert gas generates a plasma having positive charges after ionization by the ion source 15, and the plasma continuously bombards the sputtering target a, so that atoms on the target are sputtered onto the surface of the substrate b and attached. After the reaction gas is introduced into the vacuum chamber 1 at a predetermined pressure, the reaction gas reacts with atoms attached to the surface of the substrate b, thereby completing the plating of the film layer. In this embodiment, the volume flow rate of the reaction gas is less than 120sccm.
In the present embodiment, the electric polarities of the target susceptors 11 are alternately changed by the electrode switching device 13 at a predetermined cycle, so that the electric polarities of the sputtering targets a on the different target susceptors 11 are changed to the cathodes at a predetermined cycle. For example, when there are two target susceptors 11, the electric polarity of the sputtering target a on one of the target susceptors 11 is set to be a cathode by the electrode switching device 13, and the electric polarity of the sputtering target a on the other target susceptor 11 is not displayed. After a certain time (preset period), the electric polarity of the sputtering target a with the electric polarity being the cathode is changed by the change of the electrode switching device 13, and the electric polarity of the other sputtering target a becomes the cathode. The invention realizes that the positively charged plasmas bombard the sputtering target a with the electric polarity being the cathode in turn in the film plating process by alternately changing the electric polarity of the sputtering target a, thereby avoiding the 'poisoning' of the sputtering target a caused by long-time bombardment of the same sputtering target a, further avoiding the failure of the sputtering target a in the film plating process, effectively prolonging the service life of the sputtering target a, ensuring the continuous sputtering reaction and further improving the film plating efficiency of film plating equipment. In this embodiment, when a film is deposited on a substrate, the sputtering reaction temperature is 80 to 300 ℃, and the sputtering rate V satisfies: v is more than or equal to 0.1nm/s and less than or equal to 1nm/s. The atoms on the target material are sputtered on the surface of the substrate, the sputtering reaction temperature is 80-300 ℃, the sputtering rate is set within the range of 0.1nm/s less than or equal to V less than or equal to 1nm/s, and the jitter characteristic of a rotating system where the substrate clamp 12 is positioned can be better matched, so that the disk difference of the substrate b borne on the substrate clamp 12 is less than 6nm, the atoms on the substrate are more uniformly attached, the thickness of a coating film on the substrate is further uniform, the coating film effect is better, and the coating film performance is better.
According to one embodiment of the invention, argon is used as the inert gas and hydrogen or oxygen is used as the reactive gas. In this embodiment, the volume flow rates of argon, hydrogen and oxygen respectively introduced into the vacuum chamber 1 are smaller than 120sccm, and when the reaction gas is hydrogen, the volume flow rates of argon and hydrogen satisfy:
0.2≤V H2 /V Ar ≤0.5，
wherein the V is H2 Is the volume flow of hydrogen, the V Ar Is the volume flow of argon.
The volume flow rate of argon, hydrogen and oxygen into the vacuum chamber 1 is set to be less than 120sccm, and when the reaction gas is hydrogen, the volume flow rate of the argon and the hydrogen meets 0.2.ltoreq.V H2 /V Ar The stress of the coated product can be effectively improved in the process of coating the film layer, so that the internal structure of the coated film layer is more stable, the defects of poor uniformity, film breakage, film stripping after glue adhesion and the like caused by bending of the coated film stress are overcome, the product performance and yield are improved, and the use of the film layer is further ensuredLife and use effect. As shown in FIG. 2, at a temperature of 150 ℃, the volume flow rate of the reaction gas hydrogen is 35sccm, and by changing the argon flow rate of different inert sputtering gases, the Si: H of 120nm is plated on the 0.5mm D263 glass substrate, the film stress is found to be reduced firstly and then increased secondly along with the increase of the argon flow rate. Therefore, when the setting conditions are adopted, the film stress can be greatly reduced, and the bending of the optical filter can be improved.
In this embodiment, in step S3, the film plated on the substrate b includes an IR band pass film and an AR long pass film. The IR band-pass film layer and the AR long-wave pass film layer are respectively plated on two opposite sides of the substrate b. In this embodiment, the IR band pass layer and the AR long wave pass layer are respectively formed by alternately plating two or three of a first refractive index material, a second refractive index material and a third refractive index material, for example, the plating materials of the IR band pass layer and the AR long wave pass layer may be respectively plated by two materials; alternatively, the plating materials of the IR band-pass film layer and the AR long-wave pass film layer can be plated by three materials respectively; or the IR band-pass film layer is plated by two materials, and the AR long-wave pass film layer is plated by three materials; or the IR band-pass film layer is plated by three materials, and the AR long-wave pass film layer is plated by two materials. When the film layer is plated with two materials, the combination of the two materials may be a first refractive index material and a second refractive index material or a first refractive index material and a third refractive index material or a third refractive index material and a second refractive index material, and it should be noted that the third refractive index material is different from the second refractive index material. When the film layer is plated with three materials, the combination of the three materials is a first refractive index material, a second refractive index material, and a third refractive index material. In this embodiment, the refractive index of the first refractive index material is less than 3, the refractive index of the second refractive index material is greater than 3, and the refractive index of the third refractive index material is less than 4. It should be noted that the first refractive index material, the second refractive index material, and the third refractive index material are different. In the present embodiment, the first refractive index material is niobium pentoxide (Nb) 2 O 5 ) Tantalum pentoxide (Ta) 2 O 5 ) Titanium dioxide (TiO) 2 ) Silicon dioxide (SiO) 2 ) Zirconium dioxide (ZrO) 2 ) Silicon nitride (Si) 2 N), silicon nitride (SiN), silicon nitride (Si) 2 N 3 ) Silicon nitride (Si) 3 N 4 ) One or a mixture of more than one of them. The second refractive index material may be silicon hydride (Si: H), and the substrate is a D263 white glass or an AF32 white glass material. It should be noted that the AR long-wave pass film layer is an antireflection film, that is, an antireflection film, and the IR pass film layer is an infrared cut-off film.
As shown in fig. 3, according to an embodiment of the present invention, the IR pass band film layer and the AR long wave pass film layer are each a multilayer film structure. In this embodiment, one layer of the IR band pass layer and the AR long pass layer, which are respectively connected to the substrate b, is plated with a first refractive index material or a third refractive index material. The IR band-pass film layer and the AR long-wave pass film layer are respectively plated with a first refractive index material or a third refractive index material close to an incident medium, and the advantages of excellent adhesive force, high hardness, good wear resistance and strong erosion resistance are achieved by adopting the first refractive index material or the third refractive index material, so that the film coating provided by the invention has good adhesive effect and high strength on the substrate b.
According to one embodiment of the present invention, referring to fig. 3, if the IR pass band-pass film layer has a multi-layer structure having five sub-film layers, and when the IR pass band-pass film layer is plated with both the first refractive index material and the second refractive index material, the first refractive index material is plated on the surface of the substrate b to form a first sub-film layer, the second refractive index material is plated on the first sub-film layer to form a second sub-film layer, the first refractive index material is plated on the second sub-film layer to form a third sub-film layer, the second refractive index material is plated on the third sub-film layer to form a fourth sub-film layer, and the first refractive index material is plated on the fourth sub-film layer to form a fifth sub-film layer. In this embodiment, the plating method of the AR long-wave pass film layer is the same as the above method, and will not be described here again.
According to another embodiment of the present invention, referring to fig. 3, if the IR pass band-pass film layer has a multi-layer structure having five sub-film layers, and when the IR pass band-pass film layer is plated with two materials of a first refractive index material and a third refractive index material (it should be noted that the first refractive index material is different from the third refractive index material and the refractive index of the third refractive index material is greater than that of the first refractive index material), the first refractive index material is plated on the surface of the substrate b to form a first sub-film layer, the third refractive index material is plated on the first sub-film layer to form a second sub-film layer, the first refractive index material is plated on the second sub-film layer to form a third sub-film layer, the third refractive index material is plated on the third sub-film layer to form a fourth sub-film layer, and the first refractive index material is plated on the fourth sub-film layer to form a fifth sub-film layer. In this embodiment, the plating method of the AR long-wave pass film layer is the same as the above method, and will not be described here again.
According to another embodiment of the present invention, referring to fig. 3, if the IR pass band-pass film layer has a multi-layer structure having five sub-film layers, and when the IR pass band-pass film layer is plated with both the third refractive index material and the second refractive index material (note that the third refractive index material is different from the second refractive index material and the refractive index of the third refractive index material is smaller than that of the second refractive index material), the third refractive index material is plated on the surface of the substrate b to constitute the first sub-film layer, the second refractive index material is plated on the first sub-film layer to constitute the second sub-film layer, the third refractive index material is plated on the second sub-film layer to constitute the fourth sub-film layer, and the third refractive index material is plated on the fourth sub-film layer to constitute the fifth sub-film layer. In this embodiment, the plating method of the AR long-wave pass film layer is the same as the above method, and will not be described here again.
According to another embodiment of the present invention, referring to fig. 3, if the IR pass band-pass layer is a multi-layer structure having five sub-layers, and when the IR pass band-pass layer is plated with three materials, i.e., a first refractive index material, a second refractive index material, and a third refractive index material (note that the third refractive index material is different from the second refractive index material and the second refractive index material is greater than the refractive index of the third refractive index material and the first refractive index material), the first refractive index material is plated on the surface of the substrate b to form the first sub-layer, the second refractive index material is plated on the first sub-layer to form the second sub-layer, the third refractive index material is plated on the second sub-layer to form the third sub-layer, the second refractive index material is plated on the third sub-layer to form the fourth sub-layer, and the first refractive index material is plated on the fourth sub-layer to form the fifth sub-layer. In this embodiment, the plating method of the AR long-wave pass film layer is the same as the above method, and will not be described here again.
Referring to fig. 4, it can be seen from the characteristic curve of the finished product plated by the plating apparatus according to the present invention that the film plated by the present invention can satisfy a passband with high transmittance only in a specific wavelength band in the light wave range interval of 800-1200nm within the light wave range of 350-1200nm, and all other wavelength bands are cut off to a value of over OD 2. Therefore, the coating equipment and the coating method can realize the light wave range of 800-1200nm, the refractive index of the second refractive index material is more than 3.55, and the extinction coefficient is less than 0.002; thereby greatly improving the center wavelength drift amount of the passband caused by the change of the infrared narrowband filter along with the incident angle, and the center wavelength drift amount of the passband is smaller than 15nm at the incident angles of 0 DEG and 30 deg.
The foregoing is merely exemplary of embodiments of the invention and, as regards devices and arrangements not explicitly described in this disclosure, it should be understood that this can be done by general purpose devices and methods known in the art.
The above description is only one embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. The coating equipment comprises a vacuum chamber (1), a target base (11) and a substrate clamp (12), wherein the target base (11) and the substrate clamp (12) are arranged in the vacuum chamber (1), and the target base (11) is arranged above the substrate clamp (12); characterized by also comprising an electrode switching device (13);
the electrode switching device (13) is connected with the target base (11), and the number of the target bases (11) is even;
the coating equipment further comprises: a radio frequency generator (14) arranged in the vacuum chamber (1) adjacent to the target base (11) and used for providing and enhancing the plasma movement speed at the position of the target base (11), and an alternating magnetic field device (19) arranged outside the vacuum chamber (1) and opposite to the target base (11);
the electrode switching device (13) is an alternating current electrode switching device.
2. Coating apparatus according to claim 1, characterized in that the target base (11) is provided with linear displacement means;
and the linear displacement device drives the target base (11) to reciprocate along the vertical direction.
3. The plating apparatus according to claim 1 or 2, characterized by further comprising: an ion source (15) and an air extractor (16) which are arranged on the vacuum chamber (1), an air inlet pipe (17) for introducing air into the vacuum chamber (1) and an air outlet pipe (18) for extracting air in the vacuum chamber (1);
the gas inlet pipe (17) includes a first gas inlet pipe (171) for conveying inert gas and a second gas inlet pipe (172) for introducing reaction gas.
4. A coating apparatus according to claim 3, characterized in that the inlet pipe (17) is arranged opposite the outlet pipe (18).
5. A coating method using the coating apparatus according to any one of claims 1 to 4, comprising:
s1, respectively mounting a sputtering target material and a substrate in a vacuum chamber (1), and controlling the pressure in the vacuum chamber (1) to be a preset pressure value;
s2, introducing inert gas into the vacuum chamber (1), and bombarding the surfaces of the sputtering target and the substrate for pretreatment after ionizing the inert gas;
s3, introducing reaction gas into the vacuum chamber (1), and plating a film layer on the substrate, wherein the electric polarity of the sputtering target is alternately changed in a preset period.
6. The plating method according to claim 5, wherein the volume flow rate of the inert gas and the reaction gas is less than 120sccm.
7. The plating method according to claim 6, wherein the inert gas is argon and the reaction gas is hydrogen or oxygen;
if the reaction gas is hydrogen, the volume flow of the argon and the hydrogen is more than or equal to 0.2 and less than or equal to V H2 /V Ar Less than or equal to 0.5, wherein the V H2 Is the volume flow of hydrogen, the V Ar Is the volume flow of argon.
8. The method according to claim 7, wherein in the step S3, when the film is coated on the substrate, the sputtering reaction temperature is 80 ℃ to 300 ℃, and the sputtering rate V satisfies: v is more than or equal to 0.1nm/s and less than or equal to 1nm/s.
9. The plating method according to claim 5 or 8, wherein in step S3, the film layer includes an IR band pass film layer and an AR long wave pass film layer, which are plated on opposite sides of the substrate, respectively;
the IR band-pass film layer and the AR long-wave pass film layer are respectively formed by alternately plating two or three of a first refractive index material, a second refractive index material and a third refractive index material, wherein the refractive index of the first refractive index material is smaller than 3, the refractive index of the second refractive index material is larger than 3, and the refractive index of the third refractive index material is smaller than 4.
10. The plating method according to claim 9, wherein one layer of the IR pass band film layer and the AR long pass film layer, respectively, connected to the substrate is plated with the first refractive index material or the third refractive index material;
and one layer of the IR band-pass film layer and the AR long-wave pass film layer, which is respectively close to the incident medium, is plated by adopting the first refractive index material or the third refractive index material.
11. The plating method according to claim 9, wherein the first refractive index material is Nb 2 O 5 、Ta 2 O 5 、TiO 2 、SiO 2 、ZrO 2 、Si 2 N、SiN、Si 2 N 3 、Si 3 N 4 One or a mixture of more than one of them.
12. The method of claim 9, wherein the second refractive index material is silicon hydride.
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| CN111455343A (en) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | Film coating machine and film coating control method |
| US11898248B2 (en) * | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
| CN111172499A (en) * | 2020-01-21 | 2020-05-19 | 东莞市微科光电科技有限公司 | Film coating method and apparatus |
| CN113109898B (en) * | 2021-04-07 | 2022-05-06 | 浙江水晶光电科技股份有限公司 | Preparation method of hydrogenated compound film and optical filter |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0462303A1 (en) * | 1988-12-21 | 1991-12-27 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Vacuum arc vapor deposition device having electrode switching means |
| DE69006593D1 (en) * | 1990-06-19 | 1994-03-24 | Kobe Steel Ltd | Device for vacuum coating by means of arc discharge with means for switching the electrodes. |
| DE19610253A1 (en) * | 1996-03-15 | 1997-10-09 | Fraunhofer Ges Forschung | Sputtering apparatus for coating glass, packaging material, tools etc. |
| TW562868B (en) * | 2000-03-23 | 2003-11-21 | Sharp Kk | Plasma deposition device for forming thin film |
| CN1830055A (en) * | 2003-07-25 | 2006-09-06 | 优纳克斯巴尔策斯股份有限公司 | Sliding anode magnetron sputtering source |
| CN105256281A (en) * | 2015-11-24 | 2016-01-20 | 深圳市华星光电技术有限公司 | Magnetron sputtering coating device and target device thereof |
| CN107620050A (en) * | 2017-11-02 | 2018-01-23 | 安徽普威达真空科技有限公司 | Vacuum coater and film plating process for metal, rod-shaped piece surface |
| CN208733216U (en) * | 2018-08-06 | 2019-04-12 | 信阳舜宇光学有限公司 | A kind of filming equipment |
-
2018
- 2018-08-06 CN CN201810884395.4A patent/CN109023273B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0462303A1 (en) * | 1988-12-21 | 1991-12-27 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Vacuum arc vapor deposition device having electrode switching means |
| DE69006593D1 (en) * | 1990-06-19 | 1994-03-24 | Kobe Steel Ltd | Device for vacuum coating by means of arc discharge with means for switching the electrodes. |
| DE19610253A1 (en) * | 1996-03-15 | 1997-10-09 | Fraunhofer Ges Forschung | Sputtering apparatus for coating glass, packaging material, tools etc. |
| TW562868B (en) * | 2000-03-23 | 2003-11-21 | Sharp Kk | Plasma deposition device for forming thin film |
| CN1830055A (en) * | 2003-07-25 | 2006-09-06 | 优纳克斯巴尔策斯股份有限公司 | Sliding anode magnetron sputtering source |
| CN105256281A (en) * | 2015-11-24 | 2016-01-20 | 深圳市华星光电技术有限公司 | Magnetron sputtering coating device and target device thereof |
| CN107620050A (en) * | 2017-11-02 | 2018-01-23 | 安徽普威达真空科技有限公司 | Vacuum coater and film plating process for metal, rod-shaped piece surface |
| CN208733216U (en) * | 2018-08-06 | 2019-04-12 | 信阳舜宇光学有限公司 | A kind of filming equipment |
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