WO2023005136A1

WO2023005136A1 - Neutral density filter, and preparation method and preparation device therefor

Info

Publication number: WO2023005136A1
Application number: PCT/CN2021/141788
Authority: WO
Inventors: 卢仁; 尧俊; 陈金龙; 吴永辉; 张睿智; 羊彦; 刘风雷
Original assignee: 浙江水晶光电科技股份有限公司
Priority date: 2021-07-29
Filing date: 2021-12-27
Publication date: 2023-02-02
Also published as: CN113549888A

Abstract

The present application relates to the technical field of touch screens, and provides a neutral density filter and a preparation method and preparation device therefor. The method comprises: arranging a first target, a second target and a substrate in a reaction chamber, and continuously rotating the substrate; simultaneously bombarding the first target and the second target by means of a working gas; forming a non-conductive material on a deposition face of the substrate when the deposition face of the substrate faces the first target; forming an optical filter material on the deposition face of the substrate when the deposition face of the substrate faces the second target; and forming a mixed material film layer of the non-conductive material and the optical filter material on the deposition face of the substrate so as to obtain a neutral density filter. By means of continuously rotating the substrate, the non-conductive material and the optical filter material are alternately deposited on the rotating substrate to finally obtain the mixed material film layer having a uniform structure, so as to obtain the neutral density filter that has both non-conductive properties and optical filter properties, and can achieve a high electrical resistance and also maintain the optical filter properties of the neutral density filter.

Description

Neutral gray mirror and its preparation method and preparation device

Cross References to Related Applications

This application claims priority to a Chinese patent application with application number 202110869100.8 and titled "Neutral gray mirror and its preparation method and preparation device" filed with the State Intellectual Property Office of China on July 29, 2021, the entire contents of which are incorporated by reference in this application.

technical field

The present application relates to the technical field of touch screens, in particular to neutral gray mirrors and their preparation methods and preparation devices.

Background technique

The touch screen display allows the user to touch the preset position on the display screen with a finger, such as touching an icon or text, to realize the operation of the host, which gets rid of the keyboard and mouse operation and makes the human-computer interaction more straightforward. Therefore, Currently, more and more electronic devices are equipped with display screens with touch functions. However, the touch screen requires no conductive medium on its surface, otherwise it will cause the touch screen to fail, thus limiting the application of metal thin films such as titanium in touch screens and other fields.

Neutral gray filter, also known as ND filter, is called ND Filter in English. It is a kind of filter added to the camera lens, which can weaken the light entering the lens and reduce the sensitivity. In order to make the display effect of the touch screen better, the designer considers applying the neutral gray mirror to the touch screen, but when the existing neutral gray mirror is applied to the touch screen, because the existing neutral gray mirror only has the characteristic Conductive properties, which makes the existing neutral gray mirrors still have the problem of being unable to combine the two when they are applied to touch screens.

Contents of the invention

The embodiments of the present application provide a neutral gray mirror, a manufacturing method thereof, and a manufacturing device, which can prepare a neutral gray mirror with filter properties and non-conductive properties.

In some embodiments of the present application, a method for preparing a neutral gray mirror is provided, which may include setting a first target, a second target, and a substrate in a reaction chamber, and continuously rotating the substrate; by working The gas bombards the first target and the second target at the same time; the deposition surface of the substrate may face the first target, and a non-conductive material is formed on the deposition surface of the substrate; the substrate The deposition surface of the substrate can face the second target material, and a filter material can be formed on the deposition surface of the substrate; a mixed material of the non-conductive material and the filter material can be formed on the deposition surface of the substrate thin film layer to obtain the neutral gray mirror.

Optionally, the first target, the second target and the substrate can be respectively set in the reaction chamber, and the continuous rotation of the substrate includes: continuous rotation of the substrate, the deposition surface of the substrate can be alternately facing the first target and the second target.

Optionally, the simultaneously bombarding the first target and the second target with the working gas may include: passing a reaction gas into the first target, and bombarding the working gas to make the Reactive sputtering of the first target and the reactive gas, forming a reactant of the first target and the reactive gas on the deposition surface of the substrate, the reactant may be the non-conductive material or, the bombardment of the working gas on the first target to form the material of the first target on the deposition surface of the substrate, the material of the first target can be the non-conductive material .

Optionally, the simultaneously bombarding the first target and the second target with the working gas may include: passing a reaction gas into the second target, and bombarding the working gas to make the Reactive sputtering of the second target and the reactive gas, a reactant of the second target and the reactive gas can be formed on the deposition surface of the substrate, and the reactant can be the filter material or, the working gas bombards the second target to form the material of the second target on the deposition surface of the substrate, and the material of the second target may be the filter material.

Optionally, the first target material may be a silicon target, the second target material may be a titanium target, the working gas may be argon, and the reaction gas may be oxygen.

Optionally, the first target and the second target can be electrically connected to a power source respectively; the first target, the second target and the substrate can be respectively set in the reaction chamber, and the substrate can be rotated continuously The sheet may include: adjusting the power of the power source to change the power of the first target and the second target.

Optionally, the substrate may be placed on a roller, the roller is connected to a rotating assembly, and the rotating assembly drives the roller to rotate so that the deposition surface of the substrate alternately faces the first target and the first target. The second target.

Optionally, the power supply of the first target and the power supply of the second target may be activated simultaneously and kept activated until the mixed material thin film layer is finally obtained.

In some embodiments of the present application, a neutral gray mirror is provided. The neutral gray mirror may include: a substrate and a film layer of a mixed material disposed on the substrate, and the film layer of the mixed material passes through the above-mentioned neutral gray mirror. The preparation method is sputtering on the substrate.

In some other embodiments of the present application, a preparation device for a neutral gray mirror is provided. The preparation device for a neutral gray mirror may include: a reaction chamber, in which substrates may be respectively provided in the reaction chamber, and The first target material and the second target material on the opposite side of the sheet, one side of the substrate can be electrically connected to the ground wire, and the first target material and the second target material can be electrically connected to a negative voltage respectively, so that An electric field is formed between the substrate, the first target, and the second target, and the reaction chamber can communicate with a working gas.

Optionally, the reaction chamber can be connected to a vacuum pump, so that the reaction chamber is first evacuated by the vacuum pump, and then a working gas is introduced into the reaction chamber, and the working gas can bombard the first target and the Describe the second target.

Optionally, the first target may also be connected with a reactive gas, and a non-conductive material may be obtained after the first target reacts with the reactive gas.

Optionally, the side of the first target and the second target away from the substrate is provided with a backplate and a substrate in sequence, and a magnet may be arranged between the backplate and the substrate, so The negative voltage and the substrate may be electrically connected.

For the neutral gray mirror and its preparation method and preparation device provided in the embodiments of the present application, the first target material, the second target material and the substrate are respectively arranged in the reaction chamber; the deposition surface of the substrate faces the first target material and the second target material. The direction of the target, the substrate is continuously rotated so that the deposition surface of the substrate faces the first target and the second target alternately; the first target and the second target are simultaneously bombarded by the working gas; the first target is bombarded by the working gas , to obtain a non-conductive material, when the deposition surface of the substrate faces the first target, a non-conductive material is formed on the deposition surface of the substrate, at this time the first target can be a material with non-conductive properties itself, and can be The first target is bombarded alone; or other substances can also be introduced to make the first target react with other substances to obtain a non-conductive material with non-conductive properties; the working gas bombards the second target to obtain a filter material, the substrate When the deposition surface faces the second target material, a filter material is formed on the deposition surface of the substrate. At this time, the second target material can be a material with filter properties, and the second target material can be bombarded separately; or it can also be passed through Other substances, make the second target material react with other substances to obtain a filter material with filter characteristics; the filter material is deposited on the deposition surface of the substrate and mixed with the non-conductive material on the substrate, and the substrate faces the second target again. One target, deposit non-conductive material, and then face the second target again, deposit filter material, so reciprocating cycle, the deposition surface of the substrate faces the first target and the second target alternately, the deposition surface of the substrate Form a mixed material film layer of a non-conductive material and a filter material to obtain a neutral gray mirror. The mixed material film layer of the neutral gray mirror has both non-conductive and filter properties. The mixed material film layer produced by this preparation method is both It has the characteristics of high resistance, and maintains the filter characteristics of the neutral gray mirror. It has the advantages of good transmission spectrum neutrality and good insulation, and can meet the use requirements of the neutral gray mirror in touch screen and other fields.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings that need to be used in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, so It should not be regarded as a limitation on the scope, and those skilled in the art can also obtain other related drawings according to these drawings without creative work.

Fig. 1 is a flow chart of the preparation method of the neutral gray mirror provided by the present embodiment;

Fig. 2 is the transmission spectrum diagram of different titanium target powers provided by the present embodiment;

Fig. 3 is the refractive index diagram of different titanium target powers provided by the present embodiment;

Fig. 4 is the extinction coefficient diagram of different titanium target powers provided by the present embodiment;

Fig. 5 is the reflection spectrogram of the seven-layer anti-reflection coating provided by the present embodiment;

Fig. 6 is the transmission spectrum diagram of the seven-layer anti-reflection coating provided in this embodiment;

FIG. 7 is a schematic structural diagram of a manufacturing device for a neutral gray mirror provided in this embodiment.

Icons: 10 - substrate; 11 - roller; 101 - silicon target; 101A - silicon particle; 102 - titanium target; 102A - titanium particle; 103 - back plate; 104 - magnet layer; 105 - substrate.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. In addition, the terms "first", "second", etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.

It should also be noted that, unless otherwise clearly specified and limited, the terms "setting" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct It can also be connected indirectly through an intermediary, or it can be the internal communication of two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application in specific situations.

The touch screen requires no conductive medium on its surface, otherwise it will cause its failure, thus limiting the application of titanium and other metal thin films in touch screen and other fields. At present, more and more electronic devices are equipped with display screens with touch functions. In order not to affect their touch functions, it is urgent to develop a non-conductive material with optical properties of neutral gray filter and high electrical resistance properties.

On this basis, the embodiment of the present application provides a method for preparing a neutral gray mirror, which utilizes the principle of co-sputtering coating, so that the prepared neutral gray mirror has the characteristics of high resistance and maintains the filter characteristics of the neutral gray mirror.

Specifically, please refer to FIG. 1. The embodiment of the present application provides a method for preparing a neutral gray mirror, which may include:

S100: The first target material, the second target material and the substrate 10 can be respectively set in the reaction chamber, and the substrate 10 can be continuously rotated.

The deposition surface of the substrate 10 can be used to deposit thin film materials, and a thin film layer can be formed on the substrate 10 after deposition, and the thin film layer is formed by mixing the first target material and the second target material, the first target material or the first target material The reactant of the second target material has non-conductive properties, the second target material or the reactant material of the second target material has light filtering properties, and the thin film layer formed by mixing the first target material or its reactant material and the second target material or its reactant material, both It has non-conductive properties and also has light-filtering properties, and can realize the preparation of neutral gray mirrors with non-conductive properties and light-filtering properties and be applied to touch screens.

This application adopts the technology of magnetron sputtering, and it is necessary to place the first target and the second target in the reaction chamber, place the substrate 10 at the same time, and make the deposition surface of the substrate 10 face the first target and the second target direction, when the substrate 10 is rotated so that the deposition surface faces the first target, the first target forms a non-conductive material on the deposition surface of the substrate 10, and when the deposition surface of the substrate 10 turns to the second target, A filter material with filter properties is formed by the second target material, the filter material is deposited on the deposition surface, and a mixed material of the non-conductive material and the filter material is formed on the deposition surface, and then the substrate 10 is rotated to make the deposition surface Facing the first target material, such a reciprocating cycle, the non-conductive material and filter material on the deposition surface fill each other, forming a neutral gray mirror with non-conductive and filter properties.

It should be noted that, when the non-conductive material is formed on the deposition surface of the substrate 10 through the first target material, it can be formed by the first target material alone. At this time, the first target material can be a non-conductive material; The reactant passed through the first target is formed of a non-conductive material. At this time, as long as the reactant obtained by reacting the first target with a certain substance is a non-conductive material, the first target is not limited.

In the same way, the filter material can be formed on the deposition surface of the substrate 10 through the second target material, and the filter material can be formed independently by the second target material, and at this time the second target material can be the filter material; The reactant of the target is formed by a filter material. At this time, as long as the reactant obtained by reacting the second target with a certain substance is a filter material, the second target is not limited.

The obtained non-conductive material and filter material are deposited and mixed on the deposition surface of the substrate 10 , so that a film layer having both non-conductive and filter properties can be formed on the substrate 10 .

S110: Simultaneously bombard the first target and the second target with the working gas.

Please refer to FIG. 7 , the working principle of magnetron sputtering is as follows: 1. electrons collide with argon atoms (Ar) in the process of flying to the substrate 10 under the action of an electric field, so that their ionization produces Ar+ and new electrons; ②The new electrons fly to the substrate 10, and Ar+ accelerates to the cathode target under the action of the electric field, and bombards the target surface with high energy to cause sputtering of the target; ③In the sputtered particles, neutral target atoms or molecules deposit A thin film is formed on the substrate 10, and the generated secondary electrons continue to ionize a large amount of Ar+ under the action of the electric field and magnetic field to bombard the target material, thereby achieving a high deposition rate.

Magnetron sputtering technology can be used to prepare various materials such as metals, semiconductors, and insulators, and has the advantages of simple equipment, easy control, large coating area, and strong adhesion. It is widely used in the fields of semiconductors, solar cells, and optical films.

Specifically, the reaction gas is passed into the first target, and the first target and the reaction gas are sputtered by the bombardment of the working gas, and the reactants of the first target and the reaction gas are formed on the deposition surface of the substrate 10. , the reactant is a non-conductive material; or, the working gas bombards the first target to form the material of the first target on the deposition surface of the substrate 10, and the material of the first target is a non-conductive material.

At the same time, the reaction gas is introduced into the second target, and the second target and the reaction gas are sputtered by the bombardment of the working gas, and the reactants of the second target and the reaction gas are formed on the deposition surface of the substrate 10. The reactant is the filter material; or, the working gas bombards the second target to form the material of the second target on the deposition surface of the substrate 10, and the material of the second target is the filter material.

As an example, in this application, argon is selected as the working gas for bombardment, and the first target material and reaction gas are selected to obtain reactants with non-conductive properties.

S120: The deposition surface of the substrate 10 may face the first target, and a non-conductive material may be formed on the deposition surface of the substrate 10 .

The reaction gas is passed into the first target, and the particles of the first target and the reaction gas are sputtered by the bombardment of the working gas, and the reactants of the particles of the first target and the reaction gas are obtained on the substrate 10, and the reaction The object is a non-conductive object.

At the beginning, after the working gas bombards the first target, the particles of the first target fly to the deposition surface. During this process, the particles of the first target react with the working gas to obtain reactants, and finally the reactants are deposited on the substrate 10. deposition surface.

In one embodiment of the present application, the first target can be a silicon target 101, and the reaction gas can be oxygen. After argon bombards the silicon target 101, silicon particles 101A react with oxygen to produce silicon dioxide deposited on the substrate 10. On the surface, silicon dioxide has non-conductive properties.

S130: The deposition surface of the substrate 10 faces the second target, and a filter material can be formed on the deposition surface of the substrate 10 .

S140: A thin film layer of a mixed material of a non-conductive material and a filter material may be formed on the deposition surface of the substrate 10 to obtain a neutral gray mirror.

The substrate 10 rotates continuously. When the deposition surface of the substrate 10 faces the first target, silicon dioxide is formed on the deposition surface through the reaction between the silicon target 101 and oxygen, and then the deposition surface of the substrate 10 rotates to the second target.

The substrate 10 can be specifically arranged on the roller 11, the roller 11 is connected with the rotating assembly, and the rotating assembly drives the roller 11 to rotate, so that the deposition surface of the substrate 10 faces the first target and the second target alternately. Taking titanium as the second target material as an example, the titanium target 102 is bombarded by argon gas, and the titanium particles 102A fly to the deposition surface of the substrate 10. The titanium particles 102A themselves have filter properties, so the titanium target 102 alone can complete the filter material. For deposition, titanium particles 102A are deposited on the deposition surface of the substrate 10, and are filled and mixed with silicon dioxide to form a silicon dioxide/titanium (SiO2/Ti) mixed material thin film layer, wherein silicon dioxide has a non-conductive Titanium has light filtering properties, so the mixed material film layer has both non-conductive and light filtering properties.

Titanium metal prepared by the titanium target 102 has good light filtering properties. In the wavelength range of 400nm-700nm, the transmittance difference of a single layer of titanium can be better than 3%, and it is widely used in fields such as camera lenses. Therefore, in this embodiment, the titanium target 102 is used as the second target material.

Of course, the second target can also be other materials with filter properties; it is also possible that when the second target itself does not have filter properties, the reaction obtained by reacting the second target with a certain substance The object is the filter characteristic; for example, the second target is passed into the reactive gas, and the second target and the reactive gas are sputtered by the bombardment of the working gas, and the second target and the reactive gas are formed on the deposition surface of the substrate 10. The reactant of the reaction gas, which is a filter material, specifically refers to the generation of silicon dioxide, and will not be repeated here.

In this application, the silicon target 101 is used as the first target material and the titanium target 102 is used as the second target material for specific description. The silicon target 101, the titanium target 102 and the substrate 10 are respectively placed in the reaction chamber, so that the deposition of the substrate 10 The surface first faces the silicon target 101, or first faces the titanium target 102. The silicon particles 101A alone do not have non-conductive properties or the non-conductive properties are not significant, so the silicon target 101 needs to react with oxygen, and the titanium particles 102A alone have light filtering properties, so alone The titanium target 102 can complete the deposition of the filter material. Therefore, oxygen and argon gas need to be fed into the silicon target 101, the silicon target 101 is connected to the power supply, the power supply of the silicon target 101 is started, and the argon gas bombards the silicon target 101. When the deposition surface of the substrate 10 faces the silicon target 101, the silicon particles 101A reacts with oxygen to produce silicon dioxide deposited on the deposition surface of the substrate 10. Silicon dioxide has high resistance characteristics, that is, it has good non-conductive characteristics; while starting the power supply of the silicon target 101, start the power supply of the titanium target 102, Argon bombards the titanium target 102, and when the deposition surface of the substrate 10 rotates to face the titanium target 102, the titanium particles 102A are deposited on the deposition surface of the substrate 10, and the titanium particles 102A on the deposition surface are mixed with silicon dioxide, and so forth , and finally form a thin film layer of SiO2/Ti mixed material on the deposition surface.

It can be seen from this that during the formation of the SiO2/Ti mixed material thin film layer, the two target power sources are started at the same time and remain in this state until the end of the film layer. The drum rotates at a high speed (80rpm) during film formation, and the film thickness increases only a few times after one rotation.

The drum rotates tens or even hundreds of times to obtain a SiO2/Ti mixed material film layer with a specific thickness, so this method is a process of continuous rotation and cyclic coating. During this period, when the substrate 10 faces the silicon target, the substrate 10 will be coated with SiO2, and when the substrate 10 faces the titanium target, the substrate 10 will be coated with Ti at the same time, and SiO2 and Ti will be alternately deposited on the rotating substrate 10 , and finally obtain the mixed material thin film layer with uniform structure.

Moreover, because the titanium target 102 is fed with argon gas, the argon gas isolates the oxygen at the silicon target 101 from the titanium target 102, so that the oxygen does not react with the titanium target 102, and the titanium target 102 is bombarded by the argon gas, so that the individual titanium particles 102A Deposited on the deposition surface of the substrate 10, the SiO2/Ti mixed material thin film layer has both non-conductive and filter properties, so it has the advantages of good transmission spectrum neutrality and good insulation, and can meet the requirements of the neutral gray mirror on the touch screen. and other fields of use requirements.

In the preparation method of the neutral gray mirror provided in the embodiment of the present application, the first target material, the second target material and the substrate 10 can be respectively set in the reaction chamber, and the deposition surface of the substrate 10 faces the first target material and the second target material direction, and continuously rotate the substrate 10 so that the deposition surface of the substrate 10 faces the first target and the second target alternately; the first target and the second target are simultaneously bombarded by the working gas; the first target is bombarded by the working gas , to obtain a non-conductive material, when the deposition surface of the substrate 10 faces the first target, a non-conductive material is formed on the deposition surface of the substrate 10, at this time the first target itself has non-conductive properties and can be bombarded separately The first target; or other substances can also be introduced to make the first target react with other substances to obtain a non-conductive material with non-conductive properties; at the same time, the second target is bombarded by the working gas to obtain a filter material, the substrate 10 When the deposition surface of the substrate 10 faces the second target material, a filter material is formed on the deposition surface of the substrate 10. At this time, the second target material itself can have light filtering characteristics, and can bombard the second target material alone; The substance reacts with the second target material and other substances to obtain a filter material with filter properties; the filter material is deposited on the deposition surface of the substrate 10 and mixed with the non-conductive material on the substrate 10, and the substrate 10 A thin film layer of a mixed material of non-conductive material and filter material is formed on the deposition surface. By continuously rotating the substrate 10, the non-conductive material and filter material will be alternately deposited on the rotating substrate 10, and finally a uniform structure is obtained. The mixed material thin film layer is used to obtain a neutral gray mirror. The mixed material thin film layer of the neutral gray mirror has both non-conductive properties and light filtering properties. The mixed material thin film layer produced by this preparation method has both high resistance and medium density. The filter characteristics of the gray mirror have the advantages of good spectral neutrality and good insulation, which can meet the requirements of the use of the gray mirror in the touch screen and other fields.

In addition, when forming a mixture film layer with non-conductive properties and light filtering properties on the deposition surface of the substrate 10, the mixture film layer can also have different extinction coefficients and square resistance values by controlling the power of the target to adapt to different needs.

Specifically, the first target and the second target can be electrically connected to the power supply respectively. By adjusting the power supply of the two targets respectively, the power of the two targets can be changed. When the power is different, the extinction coefficient and square resistance of the mixture film layer The values are different.

In one embodiment of the present application, the power of the silicon target 101 is fixed, and the power of the titanium target 102 is adjusted to obtain mixed materials with different spectral characteristics. Figure 2 shows the characteristic curves of the transmission spectrum of the mixed material thin film (the thickness is about 120nm) when the power of the silicon target 101 is 8kW, and the power of the titanium target 102 is increased from 8kW to 10kW. It can be seen that the transmission rate increases with the titanium target 102 power increases and decreases.

In the wavelength range of 400nm-700nm, smooth transmission spectra are obtained under different powers. Especially when the power is 8kW, the transmittance difference of the single-layer film is only 3.3%, which reflects excellent filter characteristics.

3 and 4 show the refractive index and extinction coefficient of different titanium target 102 powers. As the power of the titanium target 102 increases, the refractive index of the mixed material increases slightly, but remains at about 2.0. The extinction coefficient increases as the power of the titanium target 102 increases, and can increase from 0.1 to more than 0.5.

Table 1

钛靶功率(KW)Titanium target power (KW)	方阻(Ω/□)Square resistance (Ω/□)	是否能用于触摸屏Can it be used for touch screen
88	10^810^8	是yes
8.58.5	10^710^7	是yes
99	10^410^4	否no
1010	10^310^3	否no

Table 1 shows the square resistance values of the mixed material thin films (thickness is about 120nm) when the power of the titanium target 102 is different. As the power of the titanium target 102 increases, the square resistance of the film decreases rapidly. Films with a square resistance greater than 10^7Ω/ will not affect the touch function and can be applied to touch screens. In fields where there is no restriction on the resistance properties of the thin film, such as camera lenses and displays, SiO2/Ti mixed materials under different processes prepared by the preparation method provided by this application can be used.

Considering the light filtering and resistance characteristics of the mixed material comprehensively, the current process when the power of the titanium target 102 is 8kW is the most suitable for the neutral gray mirror on the touch screen. The prepared mixed material has a refractive index of 2.0, which can be used as a high refractive index material, combined with SiO2, a low refractive index material of 1.46, to design and plate a low-reflection medium gray mirror. Figures 5 and 6 show the reflection and transmission spectra of a multilayer film formed by coating seven layers of high and low refractive index materials alternately on glass.

In the wavelength range of 400nm-700nm, the average reflectance of the coating surface is 0.6%, and the average reflectance of both sides is 1.7% (when the back is not coated). The appearance color of the lens is blue-green, and other colors can be designed and produced according to requirements. The average transmittance is 50.3%, and the transmittance difference is only 1.98%. Other transmittances can be designed and produced according to requirements.

In summary, the method for preparing the neutral gray mirror provided in the embodiment of the present application adopts the co-sputtering technology of reactive sputtering and conventional sputtering to prepare a thin film layer of a mixed material of silicon dioxide and titanium on the substrate 10, By adjusting the power of the target, a series of titanium and silicon dioxide mixed material film layers with an average transmittance of 16.8% to 60.8% (not limited to this range) and light filtering properties are obtained; a series of refractive index are obtained at 2.0 The mixed material film layer of silicon dioxide and titanium whose extinction coefficient increases from 0.1 to above 0.5 (not limited to this range); in the visible light wavelength range of 400nm-700nm, the single layer of the mixed material film layer of silicon dioxide and titanium is transparent The rate difference can be better than 3.5%, and the square resistance is higher than 10^8Ω/; the prepared silicon dioxide and titanium mixed material thin film layer can be plated into a low-reflection medium gray mirror, at a wavelength of 400nm-700nm Within the range, the average reflectance can be as low as 0.6%, the average transmittance is 50.3%, and the transmittance difference is only 1.98%. Actual different appearance colors and transmittances can be designed and produced according to requirements.

The preparation method of the neutral gray mirror provided in the embodiment of the present application uses the co-sputtering coating technology to coat the silicon dioxide and titanium mixed material thin film layer. The mixed material thin film layer has the high resistance characteristics of silicon dioxide and maintains the The light filtering properties of metal titanium greatly expand the application fields of neutral gray films. A series of non-conductive hybrid materials with light filtering properties with a refractive index of about 2.0, adjustable extinction coefficient and square resistance have been obtained. Mixed materials with different characteristics can be selected according to actual application scenarios. The preparation method of the neutral gray mirror provided in the embodiment of the present application has the advantages of high flexibility, wide application range, simple production, and easy control. At the same time, the mixed material thin film layer can be used as an optical thin film material to be combined and designed with other materials, and a specific transmission or reflection spectral characteristic curve can be obtained, so it has broad application prospects.

In addition, the embodiment of the present application also provides a neutral gray mirror. The neutral gray mirror may include a substrate 10 and a mixed material disposed on the substrate 10. The thin film layer of the mixed material is sputtered by the method for preparing the neutral gray mirror in the above embodiment. on the substrate 10.

Taking the silicon target 101 as the first target and the titanium target 102 as the second target, during preparation, the silicon target 101, the titanium target 102 and the substrate 10 are respectively placed in the reaction chamber, and the substrate is moved by the roller 11. 10 rotates continuously at a high speed, the deposition surface of the substrate 10 faces the direction of the silicon target 101 and the titanium target 102, the reaction chamber is evacuated, and then oxygen and argon are introduced into the silicon target 101, and argon is introduced into the titanium target 102 at the same time, And the two targets are connected to the power supply; simultaneously start the power supply of the silicon target 101 and the power supply of the titanium target 102, the argon gas bombards the silicon target 101, and the silicon particles 101A react with oxygen to produce silicon dioxide and deposit on the deposition surface of the substrate 10. When the titanium target 102 is filled with argon gas, the argon gas isolates the oxygen from the titanium target 102 so that the oxygen cannot react with the titanium target 102 . The substrate 10 is continuously rotated by the roller 11. When the substrate 10 faces the silicon target 101, silicon dioxide is deposited on the deposition surface of the substrate 10; while the silicon target 101 is powered on, the titanium target 102 is powered on to bombard the argon gas Titanium target 102, the substrate 10 continues to rotate, when the substrate 10 rotates to face the titanium target 102, titanium particles 102A are deposited on the deposition surface of the substrate 10 and mixed with silicon dioxide, and the substrate 10 rotates one cycle, deposited on The film layer of the substrate 10 is extremely thin, so no matter it is coated with silicon dioxide or titanium first, it has no obvious influence on the characteristics of the film. Finally, a SiO2/Ti mixed material thin film layer is formed on the substrate 10 to obtain a neutral gray mirror with both non-conductive and light filtering properties. After the neutral gray mirror is obtained, the power supplies of the silicon target 101 and the titanium target 102 are turned off at the same time. The neutral gray mirror is applied to the touch screen, so that the touch screen can not only avoid the existence of conductive medium on the surface to avoid failure, but also reduce the reflection of ambient light due to the filter characteristics, weaken the glare phenomenon, and improve the screen clarity. .

At the same time, the first target and the second target can be connected to the power supply respectively. By adjusting the power of the two power supplies, the power of the first target and the second target can be changed to obtain mixture films with different extinction coefficients and square resistance values. layer of neutral gray mirror.

The neutral gray mirror has the same structure and beneficial effects as the manufacturing method of the neutral gray mirror in the foregoing embodiments. The structure and beneficial effects of the manufacturing method of the neutral gray mirror have been described in detail in the foregoing embodiments, and will not be repeated here.

At the same time, please refer to FIG. 7. The embodiment of the present application also provides a preparation device for a neutral gray mirror. Through this preparation device, using the preparation method of the above embodiment, the above-mentioned neutral gray mirror with non-conductive properties and light filtering properties can be prepared. .

Specifically, the manufacturing device of the neutral gray mirror provided in the embodiment of the present application may include a reaction chamber, and a substrate 10 and a first target and a second target located on the opposite side of the substrate 10 may be respectively provided in the reaction chamber. One side of the sheet 10 is electrically connected to the ground wire, and the first target and the second target are respectively electrically connected to a negative voltage to form an electric field between the substrate 10 and the first target and the second target, and the reaction chamber is connected to the working gas .

The reaction chamber can also be connected with a vacuum pump, through which the reaction chamber can be evacuated first, the reaction chamber is fed with working gas, and the working gas bombards the first target material and the second target material.

When the first target is a silicon target 101 or the like, the first target can also be connected with a reactive gas, and the first target can react with the reactive gas to obtain a non-conductive material.

At the same time, the first target material and the second target material can be electrically connected to the power supply respectively. After the first target material and the second target material are connected to the power supply, the target material particles can fly to the substrate 10 only when the working gas bombards the target material. Moreover, by changing the power of the power supply, the extinction coefficient and square resistance of the mixed material film layer formed by the two target materials can be changed.

The side of the first target and the second target away from the substrate 10 is provided with a backplane 103 and a substrate 105 in sequence, and a magnet layer 104 is arranged between the backplane 103 and the substrate 105 , and the negative voltage is electrically connected to the substrate 105 .

A magnetic field is formed by arranging the magnet layer 104 to increase the coating speed. When there is no magnetic field, the electrons move in a straight line under the action of the electric field, the probability of collision with argon is very low, and the plating rate is also very small. When there is a magnetic field, the electrons will do a spiral motion under the joint action of the electric field and the magnetic field, which increases the probability of collision with argon gas, produces more argon ions, and the plating rate increases under the bombardment of more argon ions.

The above descriptions are only the embodiments of the present application, and are not intended to limit the protection scope of the present application. For those skilled in the art, various modifications and changes may be made to the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included within the protection scope of this application.

Industrial Applicability

The application provides a neutral gray mirror and its preparation method and preparation device. The first target material and the second target material are respectively placed in the reaction chamber, and the substrate is placed at the same time, and the deposition surface of the substrate faces the first target material and the second target material. The direction of the target, when the substrate is rotated so that the deposition surface faces the first target, the first target forms a non-conductive material on the deposition surface of the substrate, and when the deposition surface of the substrate turns to the second target, through The second target forms a filter material with filter properties. The filter material is deposited on the deposition surface, and a mixed material of the non-conductive material and the filter material is formed on the deposition surface, and then the substrate is rotated so that the deposition surface faces the first The target material is reciprocated in this way, and the non-conductive material and filter material on the deposition surface fill each other to form a neutral gray mirror with non-conductive and filter properties. The mixed material film layer produced by this preparation method has both high resistance and high resistance. characteristics, and maintains the filter characteristics of the neutral gray mirror, has the advantages of good transmission spectrum neutrality and good insulation, and can meet the use requirements of the neutral gray mirror in touch screen and other fields.

In addition, it can be understood that the neutral gray mirror of the present application, its manufacturing method, and manufacturing device are reproducible, and can be used in various industrial applications. For example, the neutral density mirror of the present application, its preparation method, and preparation device can be used in fields such as touch screens.

Claims

A preparation method of neutral gray mirror is characterized in that, comprising:

setting the first target, the second target and the substrate respectively in the reaction chamber, and continuously rotating the substrate;

bombarding the first target and the second target simultaneously with a working gas;

The deposition surface of the substrate faces the first target, and a non-conductive material is formed on the deposition surface of the substrate;

The deposition surface of the substrate faces the second target, and a filter material is formed on the deposition surface of the substrate;

A mixed material film layer of the non-conductive material and the filter material is formed on the deposition surface of the substrate to obtain the neutral gray mirror.
The preparation method of the neutral gray mirror according to claim 1, wherein the first target material, the second target material and the substrate are respectively arranged in the reaction chamber, and the continuous rotation of the substrate comprises:

The substrate is continuously rotated so that the deposition surface of the substrate alternately faces the first target and the second target.
The preparation method of the neutral gray mirror according to claim 1, wherein the simultaneous bombardment of the first target and the second target by the working gas comprises:

A reactive gas is passed into the first target, and the bombardment of the working gas causes the first target and the reactive gas to sputter to form the first target on the deposition surface of the substrate. a target material and a reactant of the reactive gas, the reactant being the non-conductor material;

Alternatively, the working gas bombards the first target to form the material of the first target on the deposition surface of the substrate, and the material of the first target is the non-conductive material.
The preparation method of the neutral gray mirror according to claim 1, wherein the simultaneous bombardment of the first target and the second target by the working gas comprises:

A reactive gas is passed into the second target, and the bombardment of the working gas causes the second target and the reactive gas to sputter to form the second target on the deposition surface of the substrate. a target material and a reactant of the reaction gas, the reactant being the filter material;

Alternatively, the working gas bombards the second target to form the material of the second target on the deposition surface of the substrate, and the material of the second target is the filter material.
The method for preparing a neutral gray mirror according to claim 3, wherein the first target is a silicon target, the second target is a titanium target, the working gas is argon, and the reaction gas for oxygen.
The method for preparing a neutral gray mirror according to claim 1, wherein the first target and the second target are respectively electrically connected to a power supply;

The step of setting the first target, the second target and the substrate respectively in the reaction chamber, and continuously rotating the substrate includes:

The power of the power supply is adjusted to change the power of the first target and the power of the second target.
The method for preparing a neutral gray mirror according to any one of claims 1 to 6, wherein the substrate is arranged on a roller, the roller is connected to a rotating assembly, and the rotating assembly drives the The drum rotates so that the deposition surface of the substrate alternately faces the first target and the second target.
The preparation method of ND mirror according to claim 6 or 7, characterized in that, the power supply of the first target and the power supply of the second target are started simultaneously and kept in the starting state until finally obtained The mixed material film layer.
A neutral gray mirror, characterized in that it comprises a substrate and a mixed material thin film layer arranged on the substrate, the mixed material thin film layer passes through the neutral gray mirror according to any one of claims 1 to 8 The method of preparation is sputtering on the substrate.
A preparation device for a neutral gray mirror, characterized in that it includes a reaction chamber, a substrate, and a first target and a second target positioned on the opposite side of the substrate are respectively arranged in the reaction chamber, the substrate One side of the first target is electrically connected to the ground wire, and the first target and the second target are respectively electrically connected to a negative voltage to form an electric field between the substrate and the first target and the second target, The reaction chamber communicates with working gas.
The preparation device of the neutral gray mirror according to claim 10, wherein the reaction chamber is connected to a vacuum pump, so that the reaction chamber is first evacuated by the vacuum pump, and then a working gas is introduced into the reaction chamber, so that The working gas bombards the first target and the second target.
The device for preparing a neutral gray mirror according to claim 10 or 11, wherein the first target is also connected to a reaction gas, and a non-conductive material can be obtained after the reaction between the first target and the reaction gas Material.
According to the preparation device of any one of claims 10 to 12, it is characterized in that, the side of the first target material and the second target material away from the substrate is sequentially provided with A back plate and a base plate, a magnet is arranged between the back plate and the base plate, and the negative voltage is electrically connected to the base plate.