CN101465172A - Transparent conductive film with compound structure and preparation method thereof - Google Patents

Transparent conductive film with compound structure and preparation method thereof Download PDF

Info

Publication number
CN101465172A
CN101465172A CNA2008102052240A CN200810205224A CN101465172A CN 101465172 A CN101465172 A CN 101465172A CN A2008102052240 A CNA2008102052240 A CN A2008102052240A CN 200810205224 A CN200810205224 A CN 200810205224A CN 101465172 A CN101465172 A CN 101465172A
Authority
CN
China
Prior art keywords
layer
transparent conductive
conductive film
film
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008102052240A
Other languages
Chinese (zh)
Inventor
章俞之
宋力昕
曹韫真
齐振一
范秋林
胡行方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Ceramics of CAS
Original Assignee
Shanghai Institute of Ceramics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Ceramics of CAS filed Critical Shanghai Institute of Ceramics of CAS
Priority to CNA2008102052240A priority Critical patent/CN101465172A/en
Publication of CN101465172A publication Critical patent/CN101465172A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a composite structured transparent conductive film and a preparation method thereof, in particular to a composite structured transparent conductive film prepared by adopting magnetron sputtering process and a preparation method thereof, and belongs to the technical field of vacuum coating and photo electronic devices. The composite structured transparent conductive film prepared by the method has a multi-layer structure, and comprises a flexible substrate layer (1), a SiO2 or Al2O3 interlayer (2) on a flexible substrate layer, and an ITO conducting layer (3) on the interlayer. By adding the interlayer and controlling processing parameter, the transparent conductive film prepared by the method is characterized in that the surface resistance is 50 to 600 ohms/, the light transmittance of the visible light with a 550 nm wave band is 82% to 98%, and the transparent conductive film is applicable to the fields of display devices and thin film solar cells.

Description

Transparent conductive film with compound structure and preparation method thereof
Technical field
The present invention relates to a kind of transparent conductive film with compound structure and preparation method thereof, relate in particular to a kind of transparent conductive film with compound structure that adopts the magnetron sputtering technique preparation and preparation method thereof, belong to vacuum coating and opto-electronic device technical field.
Background technology
In the opto-electronic devices such as touch-screen of liquid crystal, flat-panel monitor, thin-film solar cells, man-machine interface, all to use nesa coating with conducting function, filming along with lightweight, facilitation development and the solar cell of these devices, the base material of conducting film transfers the more resin film class of lightweight to from glass, and the trend that replaces is arranged; In addition, film class conducting film also can be widely used in aspects such as electrostatic defending, and application prospect is good.
Nesa coating comprises doping zinc-oxide film, copper tin gallium selenium film etc., but the more of commercial applications is tin indium oxide (being called for short ITO) film.ITO is a kind of n N-type semiconductor N, and with weight ratio In 2O 3: SnO 2=9:1 is mixed to be got.Ito thin film has than broad-band gap and higher carrier density, has good electrical conductivity.The preparation of ITO conducting film has sol-gel processing, thermal evaporation, magnetron sputtering method etc., and wherein the ITO conducting film of magnetron sputtering method preparation all has good spy's energy aspect component control, structure control and the physical property control.People are more in the preparation of carrying out the ITO conducting film on glass, introduce a kind of thermal evaporation as Chinese patent application 87107654 and make the ITO conducting film, be applicable to that heating is at 200 ℃ of left and right sides glass substrates, the electrically conducting transparent membrane process of Chinese patent application 200510050544.x report carries out on substrate of glass, but technological parameter is not exhaustive.The magnetron sputtering touch-screen that Chinese patent ZL01123605.1 introduces also is only applicable to glass baseplate with nesa coating, and the technology for preparing nesa coating in substrate of glass has higher application level at present.For on flexible substrates, preparing nesa coating, the silver-doped that all adopts as Chinese patent 85104006, Chinese patent application 99125713.8, Chinese patent application 200610070509.9 reports obtains low sheet resistance, yet because the existence of atmospheric environment steam, migration or sulfuration can take place in the silver of device interfaces in actual the use, show as white point or macula lutea, and cause the decline of interface binding power, it is wrinkling to cause surface film, poor stability.In addition, adopt metal-doped aspect to prepare conducting film, visible light transmissivity also has certain restriction, how 70～90%, therefore mainly is only limited to aspect liquid crystal display screen and uses, and have limitation aspect photoelectric display.
Summary of the invention
First purpose of the present invention is to propose a kind of transparent conductive film with compound structure.
Second purpose of the present invention is to propose a kind of preparation method of transparent conductive film with compound structure.
Method of the present invention comprises the steps:
(1) preliminary treatment of base material
Select for use flexible parent metal as ground, described flexible parent metal comprises film materials such as polyester (PET) resin, Merlon (PC) resin, poly-methylacrylic acid methyl esters (PMMA) resin, and thickness is 25 μ m～1000 μ m.
Resin treatment can be adopted in the surface of flexible parent metal, and preferred acrylic resin in film surfaces such as pure PET, can be described as single face HC-PET or two-sided HC-PET with resin single face blade coating or two-sided dip-coating.The present invention preferably uses two-sided HC film material,
In order to solve conducting film and the bad difficulty of flexible parent metal associativity, the present invention utilizes the employing backwash technology of radio-frequency power supply, before plated film, charge into the high-purity argon gas of 40～60 per minute standard milliliters (note is made sccm), apply the power of 50～60 watts (W), can produce plasma base material is carried out preliminary treatment, pretreatment time is 50～200 seconds.Preliminary treatment changes the micro-structural of membrane surface, and it is long-pending to increase the film contact surface, effectively improves the adhesion of conducting film.
(2) preparation in intermediate layer
The present invention adopts rf magnetron sputtering technology to be coated with the intermediate layer, and the intermediate layer can be SiO 2Film also can be Al 2O 3Film.As adopting the high-purity silicon dioxide target among the present invention, target-substrate distance is 6～10cm, and the base vacuum degree is better than 8.0 * 10 -4Pa, radio frequency sputtering target power output are 5～20W/cm 2, sputter gas high-purity argon gas 100～140sccm, high purity oxygen gas 1～10sccm, sputtering pressure are 0.4～0.8Pa.Sputtering time 3～8 minutes.For SiO 2Film also can adopt twin target intermediate frequency sputter silicon target to make, and the deposition rate of middle RF sputtering improves nearly one times than the speed of radio frequency, but the symmetry of target is required very high, also very strict to the control of oxygen content.
(3) preparation of ITO conducting film
Adopt magnetically controlled DC sputtering to prepare the ITO conducting film, target is highdensity ITO ceramic target.The base vacuum degree is better than 8.0 * 10 -4Pa, target-substrate distance 6～10cm, sputtering target power are 2～10W/cm 2, sputter gas is a high-purity argon gas, its flow is 80～100sccm, high purity oxygen gas 1～8sccm, 30～300 seconds plated film time.
The target power output density that the present invention plates the ITO film is lower, helps the coating chamber temperature controlling, and then guarantees that modification or fold phenomenon do not take place flexible parent metal.
The conducting film that is obtained by method for preparing has following structure (see figure 1): 1-flexible parent metal, thickness 25～1000 μ m; The 2-intermediate layer, SiO 2Intermediate layer thickness 10～80nm or Al 2O 3Intermediate layer thickness 30～100nm; The 3-ITO conductive layer, thickness 10～100nm, sheet resistance 50～600 Ω/; The 4-hard resin-layer, thickness 3～6 μ m, but single or double applies.
The nesa coating of the present invention's preparation is an amorphous state, has higher conductivity and visible light transmissivity, by technology controlling and process, can obtain the conducting film of resistance value seriation.
The transmitance of conducting film adopts the spectrophotometer measurement of band integrating sphere, and Fig. 2 prepares the transmittance curve of different surfaces resistance value ITO film for the present invention, and visible light 550nm place transmitance is not in 82～98% (comprising base material).The adhesion of film and base material is checked by pull test, and 3M 6 10 test tape are attached to film surface, and becomes an angle of 90 degrees with face, leaves behind rapidly then.Through check, conducting film not damaged, nothing are peeled off the sheet resistance no change.The etching performance of conducting film adopts wet etching to check, and adopts HCl/HNO 3Or HCl/FeCl 3Etching speed is very fast, can erode ito thin film at 5～20 seconds fully, needs 30～60 seconds with acetum etching ITO film.Conducting film deionized water rinsing after the etching adopts microscopic examination after the heated-air drying, etched edge is level and smooth, neat, is suitable for using on display device and sun hull cell etc.
The intermediate layer SiO of the present invention's preparation 2Or Al 2O 3Film has a plurality of functions and effect: (1) is the physical hardening effect, can increase the case hardness of PET, improves resistance to wear; (2), increase the adhesion of basement membrane and ITO film as transition zone; (3) for intermediate layer SiO 2Film, it and transparent flexible base material PET (or PC, PMMA), ito thin film refractive index are just mated, and also have certain anti-reflection function, and the transmitance of conducting film can increase about 1～2%.
Description of drawings
Fig. 1 is the structural representation of the transparent conductive film with compound structure of the present invention's preparation, 1-flexible parent metal, 2-intermediate layer, 3-ITO conductive layer, 4-hard resin-layer.
Fig. 2 is the transmittance curve figure of different surfaces resistance value ITO film in the visible light section, 1-600 Ω/, 2-400 Ω/, 3-250 Ω/, 4-180 Ω/, 5-170 Ω/, 6-110 Ω/, 7-100 Ω/, 8-50 Ω/.
By applying coating process parameter control such as power, aeration quantity, plated film time, prepared the ITO nesa coating of different surfaces resistance value, these conducting films all have higher transmittance.
Fig. 3 prepares the transmittance curve figure of nesa coating for Comparative Examples in the visible light wave range scope
Illustrate: the conducting film transmitance of this situation preparation is lower.
Fig. 4 is the transmittance curve figure of 125 μ m single face HC-PET nesa coatings in the visible light wave range scope
Fig. 5 is the transmittance curve figure of 25 μ m PET nesa coatings in the visible light wave range scope
Fig. 6 is the transmittance curve figure of the two-sided HC-PET nesa coating of 188 μ m in the visible light wave range scope
Fig. 4～Fig. 6 shows that the nesa coating of the composite construction that the present invention is prepared all has higher transmittance.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.The experimental technique of unreceipted actual conditions in the following example usually according to normal condition, or carries out according to the condition that manufacturer advises.Unless otherwise defined or explanation, same meanings of being familiar with of all specialties used herein and scientific words and those skilled in the art.Any in addition method similar or impartial to described content and material all can be applicable in the inventive method.
Comparative Examples 1
Selecting a kind of 125 μ m single face HC-PET films for use is base material, compares the preparation of routine conducting film.
The operation technological process of Comparative Examples is: in ten thousand grades of clean rooms, take out whole volume PET base material from drying box and launch, remove the film in the volume 3 meters, be sampled as the plated film sample substrates.Employing has only the magnetic control sputtering device of DC power supply to compare example to implement, directly adopt magnetically controlled DC sputtering to prepare ito thin film, and coating temperature is controlled at room temperature range, be coated with finish after, take out sample.Film layer structure such as Fig. 1, wherein: 1-125 μ m PET film, the ITO film of 3-20nm, the HC layer of 4-1,2 interlayers, 6 μ m.The transmitance of measuring samples visible light wave range (comprising base material), the transmitance at the 550nm place is 86.2% (see figure 3), the sheet resistance of measurement is 378 Ω/.
Embodiment 1
Select for use and the Comparative Examples same substrate, promptly 125 μ m single face HC-PET films are base material, implement the preparation of transparent conductive film with compound structure of the present invention.
The technological process of operation is: in ten thousand grades of clean rooms, take out whole volume PET base material from drying box and launch, remove the film in the volume 3 meters, be sampled as the plated film sample substrates.Adopt radio-frequency power 50W, 100 seconds backwash sample surfaces, to strengthen the adhesion of plated film and base material.Charge into high-purity argon gas 120sccm, high purity oxygen gas 3.0sccm, applying radio-frequency power supply power is 300W, and sputtering pressure is 0.5Pa, sputter 5 minutes, and sputter obtains silica membrane.Regulate high-purity argon gas and high purity oxygen tolerance then: argon gas 80sccm, oxygen 2.0sccm, applying DC power supply power is 100W, full trrottle state, sputtering time 60s, preparation ito thin film.The coating process sample temperature remains on 18.1～18.2 ℃.Film layer structure such as Fig. 1, wherein: 1-125 μ m PET film, the SiO of 2-35nm 2Film, the ITO film of 3-15nm, the HC layer of 4-1,2 interlayers, 6 μ m.Measuring the transmitance (comprising base material) of conducting film visible light wave range, than the obvious raising of Comparative Examples, is 90.1% (see figure 4) in the transmitance at 550nm place, and the sheet resistance of measurement is 397 Ω/.Conducting film is functional through rubber friction test, adhesive tape pull test, through acetic acid etching after etching part with the etching part cross section is not level and smooth.
Embodiment 2
Selecting a kind of 25 μ m PET films for use is base material, carries out being coated with of conducting film.
The coating process parameter is with embodiment 1, and film layer structure is 1,2,3 layer of Fig. 1, and thickness parameter is with embodiment 1.Measuring conducting film is 88.9% (see figure 5) at 550nm place light transmittance, and sheet resistance is 408 Ω/.Conducting film is functional through rubber friction test, adhesive tape pull test, through acetic acid etching after etching part with the etching part cross section is not level and smooth.
Embodiment 3
Selecting the two-sided HC-PET film of a kind of 188 μ m for use is base material, carries out being coated with of conducting film.
The coating process parameter is with embodiment 1, and film layer structure comprises each layer of Fig. 1, and thickness parameter is with embodiment 1.Measure conducting film at 550nm place transmitance 91.3% (see figure 6), sheet resistance 394 Ω/.Conducting film is functional through rubber friction test, adhesive tape pull test, through acetic acid etching after etching part with the etching part cross section is not level and smooth.
Embodiment 4
The present invention is that the PC film of 0.6mm and PMMA thin-film sheet that thickness is 0.8mm carry out being coated with of conducting film to thickness also.
Technological parameter is measured conducting film and is respectively 90.3% and 90.8% at 550nm place light transmittance with embodiment 1, and sheet resistance is at 380～420 Ω/.Conducting film is functional through rubber friction test, adhesive tape pull test, through acetic acid etching after etching part with the etching part cross section is not level and smooth.

Claims (10)

1, transparent conductive film with compound structure is characterized in that, has sandwich construction, comprises flexible substrate layer (1); SiO on flexible substrate layer 2Or Al 2O 3Intermediate layer (2); With the ITO conductive layer (3) on the intermediate layer.
By the described conducting film of claim 1, it is characterized in that 2, flexible parent metal comprises polyester (PET) resin, Merlon (PC) resin, poly-methylacrylic acid methyl esters (PMMA) resin.
3, by claim 1 or 2 described conducting films, it is characterized in that between flexible substrate layer (1) and intermediate layer (2), having hard resin-layer, preferred acrylic compounds hard resin-layer.
4, by claim 1 or 2 or 3 described conducting films, it is characterized in that under flexible substrate layer (1), having hard resin-layer, preferred acrylic compounds hard resin-layer.
5, by claim 1 or 2 or 3 described transparent conductive film with compound structure, it is characterized in that the thickness of flexible substrate layer is 25～1000 μ m, SiO 2Intermediate layer thickness 10～80nm or Al 2O 3Intermediate layer thickness 30～100nm, ITO conductive layer thickness 10～100nm.
6, by claim 3 or 4 described transparent conductive film with compound structure, it is characterized in that described hardening resin layer thickness 3～6 μ m.
7, the preparation method of transparent conductive film with compound structure is characterized in that, comprises the steps:
(1) adopts backwash PROCESS FOR TREATMENT flexible parent metal laminar surface, control radio-frequency power 50～60W, 50～200 seconds time;
(2) adopt rf magnetron sputtering SiO 2Or Al 2O 3The intermediate layer, control sputter SiO 2The target power output density 5～20W/cm in intermediate layer 2Reach intermediate layer thickness 10～80 μ m, control sputter Al 2O 3The target power output density 10～30W/cm in intermediate layer 2Reach intermediate layer thickness 30～100nm;
(3) adopt magnetically controlled DC sputtering ITO conductive layer, control target power output density 2～10W/cm 2Reach conductive layer thickness 10～100 μ m.
8, by the described preparation method of claim 7, it is characterized in that, the preceding employing single or double of step (1) with blade coating or dip-coating on flexible substrate layer.
9, by the described preparation method of claim 8, it is characterized in that described resin is an acrylic resin.
10, be used for display device and sun hull cell field by the described transparent conductive film with compound structure of claim 1.
CNA2008102052240A 2008-12-31 2008-12-31 Transparent conductive film with compound structure and preparation method thereof Pending CN101465172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2008102052240A CN101465172A (en) 2008-12-31 2008-12-31 Transparent conductive film with compound structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008102052240A CN101465172A (en) 2008-12-31 2008-12-31 Transparent conductive film with compound structure and preparation method thereof

Publications (1)

Publication Number Publication Date
CN101465172A true CN101465172A (en) 2009-06-24

Family

ID=40805696

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008102052240A Pending CN101465172A (en) 2008-12-31 2008-12-31 Transparent conductive film with compound structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN101465172A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101880131A (en) * 2010-06-09 2010-11-10 深圳市力合薄膜科技有限公司 Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter
CN102194539A (en) * 2010-03-11 2011-09-21 联享光电股份有限公司 Transparent electric-conducting laminate body and manufacturing method thereof
CN102446576A (en) * 2010-10-14 2012-05-09 远东新世纪股份有限公司 Transparent conductive film with light penetration degree and preparation method thereof
CN102637486A (en) * 2012-05-14 2012-08-15 南昌欧菲光科技有限公司 Preparation method of double-layer transparent conductive film for capacitive touch screen
CN102723128A (en) * 2012-06-25 2012-10-10 深圳豪威真空光电子股份有限公司 Flexible transparent conductive film and manufacturing method thereof and touch panel
CN102043495B (en) * 2009-10-21 2012-11-21 比亚迪股份有限公司 Conductive element and preparation method thereof, and touch screen panel
TWI425530B (en) * 2010-09-30 2014-02-01 Far Eastern New Century Corp Transparent conductive film having high optical transmittance and method for manufacturing the same
CN104039549A (en) * 2012-01-06 2014-09-10 乐金华奥斯有限公司 Two-sided transparent electrically conductive film of outstanding discernibility and production method therefor
CN104535117A (en) * 2015-01-29 2015-04-22 中国科学院上海硅酸盐研究所 Compound sensor and preparation method thereof
CN104603320A (en) * 2012-08-31 2015-05-06 株式会社钟化 Method for producing substrate with transparent electrode, and substrate with transparent electrode
CN106086789A (en) * 2016-06-30 2016-11-09 上海交通大学 Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering
CN106572596A (en) * 2016-11-09 2017-04-19 广东科翔电子科技有限公司 Double-sided circuit board and manufacturing method thereof
CN106637126A (en) * 2016-11-15 2017-05-10 南昌欧菲显示科技有限公司 Preparation method of transparent conducting thin film and transparent conducting thin film
CN110527962A (en) * 2019-05-30 2019-12-03 兰州空间技术物理研究所 A kind of compound heat controlled thin film of low stress wet-heat resisting and preparation method thereof
CN112867379A (en) * 2021-01-08 2021-05-28 中国科学院宁波材料技术与工程研究所 Transparent ultra-wideband strong electromagnetic shielding device and preparation method thereof
CN114550979A (en) * 2022-03-02 2022-05-27 辽宁科技大学 Transparent conductive wear-resistant corrosion-resistant intelligent wearable device external screen and preparation method thereof

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102043495B (en) * 2009-10-21 2012-11-21 比亚迪股份有限公司 Conductive element and preparation method thereof, and touch screen panel
CN102194539A (en) * 2010-03-11 2011-09-21 联享光电股份有限公司 Transparent electric-conducting laminate body and manufacturing method thereof
CN101880131A (en) * 2010-06-09 2010-11-10 深圳市力合薄膜科技有限公司 Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter
TWI425530B (en) * 2010-09-30 2014-02-01 Far Eastern New Century Corp Transparent conductive film having high optical transmittance and method for manufacturing the same
CN102446576A (en) * 2010-10-14 2012-05-09 远东新世纪股份有限公司 Transparent conductive film with light penetration degree and preparation method thereof
CN102446576B (en) * 2010-10-14 2014-04-23 远东新世纪股份有限公司 Transparent conductive film with light penetration degree and preparation method thereof
CN104039549A (en) * 2012-01-06 2014-09-10 乐金华奥斯有限公司 Two-sided transparent electrically conductive film of outstanding discernibility and production method therefor
CN104039549B (en) * 2012-01-06 2016-08-17 乐金华奥斯有限公司 Visual outstanding two sides transparent and electrically conductive film and preparation method thereof
CN102637486A (en) * 2012-05-14 2012-08-15 南昌欧菲光科技有限公司 Preparation method of double-layer transparent conductive film for capacitive touch screen
CN102723128B (en) * 2012-06-25 2015-02-18 深圳豪威真空光电子股份有限公司 Flexible transparent conductive film and manufacturing method thereof and touch panel
CN102723128A (en) * 2012-06-25 2012-10-10 深圳豪威真空光电子股份有限公司 Flexible transparent conductive film and manufacturing method thereof and touch panel
CN104603320A (en) * 2012-08-31 2015-05-06 株式会社钟化 Method for producing substrate with transparent electrode, and substrate with transparent electrode
CN104603320B (en) * 2012-08-31 2017-04-05 株式会社钟化 The manufacture method of the substrate with transparency electrode and the substrate with transparency electrode
CN104535117A (en) * 2015-01-29 2015-04-22 中国科学院上海硅酸盐研究所 Compound sensor and preparation method thereof
CN106086789A (en) * 2016-06-30 2016-11-09 上海交通大学 Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering
CN106086789B (en) * 2016-06-30 2019-03-22 上海交通大学 The interface layer method of transparent conductive film is deposited in surface of polyester by magnetron sputtering
CN106572596A (en) * 2016-11-09 2017-04-19 广东科翔电子科技有限公司 Double-sided circuit board and manufacturing method thereof
CN106637126A (en) * 2016-11-15 2017-05-10 南昌欧菲显示科技有限公司 Preparation method of transparent conducting thin film and transparent conducting thin film
CN110527962A (en) * 2019-05-30 2019-12-03 兰州空间技术物理研究所 A kind of compound heat controlled thin film of low stress wet-heat resisting and preparation method thereof
CN110527962B (en) * 2019-05-30 2021-10-08 兰州空间技术物理研究所 Low-stress humidity-heat-resistant composite thermal control film and preparation method thereof
CN112867379A (en) * 2021-01-08 2021-05-28 中国科学院宁波材料技术与工程研究所 Transparent ultra-wideband strong electromagnetic shielding device and preparation method thereof
CN114550979A (en) * 2022-03-02 2022-05-27 辽宁科技大学 Transparent conductive wear-resistant corrosion-resistant intelligent wearable device external screen and preparation method thereof

Similar Documents

Publication Publication Date Title
CN101465172A (en) Transparent conductive film with compound structure and preparation method thereof
US10281616B2 (en) Transparent body for use in a touch panel having structured transparent conductive film directly between first and second transparent layer stacks, method of making, and apparatus for making
CN101866708B (en) High-transmissivity flexible transparent conductive film and preparation method thereof
KR101109442B1 (en) Transparent conductive film and method for manufacturing the same
TWI653670B (en) Transparent body with single substrate and anti-refelection and/or anti-fingerprint coating and method of manufacturing thereof
CN101748405B (en) Transparent conducting film and preparation method thereof, solar battery and flat panel display device
CN102174689A (en) FZO/metal/FZO transparent conductive film and preparation method thereof
CN101648777A (en) High-transmittance TP glass and manufacturing method thereof
TW200947021A (en) Display substrate and manufacturing method thereof and display device
CN201343500Y (en) High transmission conductive glass for touch screen
Dong et al. Fabrication of high-quality flexible transparent conductive thin films with a Nb2O5/AgNWs/Nb2O5 sandwich structure
CN105551579A (en) Electrochromic multi-layered transparent conductive thin film and preparation method therefor
Liu et al. ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties
CN101681069B (en) Transparent electrode
CN106119778A (en) The method of room temperature sputtering sedimentation flexibility AZO transparent conductive film
WO2004065656A1 (en) Ito thin film, film-forming method of same, transparent conductive film and touch panel
CN105489270B (en) A kind of sandwich transparent conductive film and preparation method thereof
CN103177800B (en) A kind of high transmittance transparent conductive film and preparation method thereof
CN114231903B (en) Niobium oxide/silver nanowire double-layer structure flexible transparent conductive film and preparation method thereof
CN106893984A (en) The preparation method of the tin-doped indium oxide based coextruded film of enhancing visible light wave range transmission
JP5362231B2 (en) Method for producing transparent conductive film
CN102650044B (en) A kind of preparation method of SGZO-Au-SGZO nesa coating
CN105741916B (en) A kind of flexible transparent electrode and preparation method thereof
CN101834009B (en) Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
CN106024110A (en) Strontium stannate-based flexible transparent conductive electrode and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20090624