CN105489270B - A kind of sandwich transparent conductive film and preparation method thereof - Google Patents
A kind of sandwich transparent conductive film and preparation method thereof Download PDFInfo
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- CN105489270B CN105489270B CN201610036475.5A CN201610036475A CN105489270B CN 105489270 B CN105489270 B CN 105489270B CN 201610036475 A CN201610036475 A CN 201610036475A CN 105489270 B CN105489270 B CN 105489270B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The present invention relates to the technical field of film material with function, more particularly to a kind of sandwich transparent conductive film and preparation method thereof, the transparent conductive film is BaSnO3/Cu/BaSnO3Sandwich, i.e. the BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.The preparation method of the sandwich transparent conductive film includes：Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Step 2, on substrate deposit obtaining BaSnO3Film layer；Step 3, in BaSnO3Cu film layers are sputtered in film layer；Step 4, BaSnO is sputtered in Cu film layers3Film layer, is made sandwich transparent conductive film.The sandwich transparent conductive film has the advantages that cost is low, resistivity is low, conducted electricity very well, thickness of thin, chemical stability are good and adsorptivity between substrate is strong.
Description
Technical field
The present invention relates to the technical field of film material with function, more particularly to a kind of sandwich transparent conductive film and
Its preparation method.
Background technology
Transparent conductive oxide (TCO) film is due to high transmission of visible light and low resistivity, antistatic
Coating, anti-icing equipment, solar cell, touch display screen, FPD, heating element, optical coating and transparent photoelectric
In terms of have vast potential for future development.At present, most widely used transparent conductive oxide film is that indium system oxide (ITO) is thin
Film, its comprehensive photoelectric properties are excellent, are most widely used, but indium is poisonous, and exist expensive, and stability is poor, in hydrogen etc.
The problems such as being easily reduced in gas ions atmosphere, therefore people try hard to a kind of cheap and excellent performance the ITO replacements of searching
Material.
Ultra-thin conductive metal level can also as nesa coating, but at present it is applicable only the resistance such as gold, silver and platinum
The noble metal that rate is low and chemical stability is good, but gold and platinum are costly, limit its application.
The transparent conductive film of transparent conductive film of the prior art, mostly single layer structure, this single layer structure it is saturating
Bright conductive film, has that resistivity is high, thickness low LCL is thin, poor chemical stability defect, and this single layer structure is transparent
Adsorptivity between conductive film and substrate is not strong enough, causes to be unfavorable for actual production.
The content of the invention
An object of the present invention is to provide that a kind of cost is low, resistivity for weak point of the prior art
The sandwich transparent conductive film that low, thickness of thin, chemical stability are good and adsorptivity of between substrate is strong.
The second object of the present invention is to provide that a kind of cost is low, resistivity for weak point of the prior art
The preparation side for the sandwich transparent conductive film that low, thickness of thin, chemical stability are good and adsorptivity of between substrate is strong
Method.
To reach one of above-mentioned purpose, the present invention is achieved through the following technical solutions.
A kind of sandwich transparent conductive film is provided, the transparent conductive film is BaSnO3/Cu/BaSnO3Interlayer
Structure, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.
Every layer of BaSnO3The thickness of film layer is 10nm~100nm, the thickness of the Cu film layers for 3nm~
20nm。
It is preferred that, every layer of BaSnO3The thickness of film layer is 30nm~50nm, and the thickness of the Cu film layers is
8nm~11nm.
To reach the two of above-mentioned purpose, the present invention is achieved through the following technical solutions.
A kind of preparation method of sandwich transparent conductive film is provided, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture or argon
Gas is as sputter gas to sputter BaSnO3Target, progress deposits and obtains BaSnO on substrate under certain sputtering power3
Film layer；
Step 3, the BaSnO obtained under certain sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under certain sputtering power in the Cu film layers that step 3 is obtained3Film layer, system
Obtain sandwich transparent conductive film.
In above-mentioned technical proposal, in the step one, the BaSnO3The purity of target and the Cu targets is
99.99%。
In above-mentioned technical proposal, in the step 2, the vacuum of the magnetic control sputtering system is 0.1 × 10-3Pa~1.0
×10-3Pa。
In above-mentioned technical proposal, in the step 2, in the argon oxygen gas mixture, the mol ratio of oxygen and argon gas for 0.1 ~
0.5:1；The pressure of the argon oxygen gas mixture or argon gas is the Pa of 0.3 Pa ~ 3.
In above-mentioned technical proposal, in the step 2, the substrate is glass substrate, quartz substrate or Sapphire Substrate.
It is described Step 2: in step 3 and step 4, the sputtering power is 30W ~ 100W in above-mentioned technical proposal.
In above-mentioned technical proposal, the BaSnO3Target and the Cu targets are respectively with the distance between the substrate
30mm~100mm.
Beneficial effects of the present invention：
（1）A kind of sandwich transparent conductive film that the present invention is provided, is BaSnO3/Cu/BaSnO3Sandwich,
Because BaSnO3 is a kind of typical cubic perovskite structure oxide, and it is n-type wide bandgap semiconductor materials, its forbidden energy gap
For 3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich is transparent to be led
Conductive film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, change
Learn the advantage that stability is good and adsorptivity of between substrate is strong.Wherein, a kind of sandwich electrically conducting transparent produced by the present invention
Film conducts electricity very well, and resistivity as little as 5 × 10-5。
（2）A kind of sandwich transparent conductive film that the present invention is provided, is BaSnO3/Cu/BaSnO3Sandwich,
Due to BaSnO3Film layer is relative to ZnSnO of the prior art3Film layer（Zn is Volatile Elements）, without Volatile Elements,
Therefore so that the chemical stability of the sandwich transparent conductive film is good, and BaSnO3Film layer is relative in the prior art
ZnSnO3The translucency of film layer is more preferable, therefore so that the transmissivity of the sandwich transparent conductive film is high.
（3）A kind of preparation method for sandwich transparent conductive film that the present invention is provided, it is simple with preparation method, it is raw
The characteristics of producing cost low, and large-scale production can be applied to.
Brief description of the drawings
Fig. 1 is a kind of transmittance figure of sandwich transparent conductive film of the present invention.In Fig. 1, wavelength be 400nm ~
In the range of 800nm, a kind of transmissivity of sandwich transparent conductive film of the invention is 70% ~ 90%.
Embodiment
In order that technical problem solved by the invention, technical scheme and beneficial effect are more clearly understood, below in conjunction with
Drawings and examples, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Embodiment 1.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 50nm, and the thickness of Cu film layers is 13nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture as splashing
Body emanate to sputter BaSnO3Target, progress deposits and obtains BaSnO on a glass substrate under 60W sputtering power3Film
Layer；In the present embodiment, the vacuum of magnetic control sputtering system is 0.5 × 10-3Pa；In the present embodiment, in argon oxygen gas mixture, oxygen and
The mol ratio of argon gas is 0.3:1, the pressure of argon oxygen gas mixture is 1.5 Pa；In the present embodiment, BaSnO3Target and Cu targets point
It is 60mm not with the distance between glass substrate；
Step 3, the BaSnO obtained under 60W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 60W sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made
Sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.Wherein, a kind of sandwich electrically conducting transparent made from the present embodiment
The square resistance of film is 7 Ω/.
Embodiment 2.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 10nm, and the thickness of Cu film layers is 10nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture as splashing
Body emanate to sputter BaSnO3Target, progress deposits and obtains BaSnO in quartz substrate under 30W sputtering power3Film
Layer；In the present embodiment, the vacuum of magnetic control sputtering system is 0.1 × 10-3Pa；In the present embodiment, in argon oxygen gas mixture, oxygen and
The mol ratio of argon gas is 0.5:1, the pressure of argon oxygen gas mixture is 0.3 Pa；In the present embodiment, BaSnO3Target and Cu targets point
It is 30mm not with the distance between quartz substrate；
Step 3, the BaSnO obtained under 30W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 30W sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made
Sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.Wherein, a kind of sandwich electrically conducting transparent made from the present embodiment
The square resistance of film is 9 Ω/.
Embodiment 3.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 50nm, and the thickness of Cu film layers is 10nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture as splashing
Body emanate to sputter BaSnO3Target, progress deposits and obtains BaSnO on a sapphire substrate under 100W sputtering power3It is thin
Film layer；In the present embodiment, the vacuum of magnetic control sputtering system is 1.0 × 10-3Pa；In the present embodiment, in argon oxygen gas mixture, oxygen
Mol ratio with argon gas is 0.1:1, the pressure of argon oxygen gas mixture is 3 Pa；In the present embodiment, BaSnO3Target and Cu targets point
It is 100mm not with the distance between Sapphire Substrate；
Step 3, the BaSnO obtained under 100W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 100W sputtering power in the Cu film layers that step 3 is obtained3Film layer, system
Obtain sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.Wherein, a kind of sandwich electrically conducting transparent made from the present embodiment
The square resistance of film is 10 Ω/.
Embodiment 4.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 30nm, and the thickness of Cu film layers is 10nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture as splashing
Body emanate to sputter BaSnO3Target, progress deposits and obtains BaSnO on a glass substrate under 40W sputtering power3Film
Layer；In the present embodiment, the vacuum of magnetic control sputtering system is 0.3 × 10-3Pa；In the present embodiment, in argon oxygen gas mixture, oxygen and
The mol ratio of argon gas is 0.4:1, the pressure of argon oxygen gas mixture is 1Pa；In the present embodiment, BaSnO3Target and Cu targets respectively with
The distance between glass substrate is 40mm；
Step 3, the BaSnO obtained under 40W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 40W sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made
Sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.Wherein, a kind of sandwich electrically conducting transparent made from the present embodiment
The square resistance of film is 13 Ω/.
Embodiment 5.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 100nm, and the thickness of Cu film layers is 20nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, is then used as sputter gas using argon gas
To sputter BaSnO3Target, progress deposits and obtains BaSnO on a glass substrate under 80W sputtering power3Film layer；This reality
Apply in example, the vacuum of magnetic control sputtering system is 0.8 × 10-3Pa；In the present embodiment, the pressure of argon gas is 2Pa；The present embodiment
In, BaSnO3Target and Cu targets are respectively 80mm with the distance between glass substrate；
Step 3, the BaSnO obtained under 80W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 80W sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made
Sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.
Embodiment 6.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO3/Cu/BaSnO3Folder
Rotating fields, the i.e. BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer.In the present embodiment, every layer
BaSnO3The thickness of film layer is 50nm, and the thickness of Cu film layers is 3nm.
A kind of preparation method of sandwich transparent conductive film of the present embodiment, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；Wherein, BaSnO3Target and
The purity of the Cu targets is 99.99%；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, then using argon oxygen gas mixture as splashing
Body emanate to sputter BaSnO3Target, progress deposits and obtains BaSnO on a glass substrate under 80W sputtering power3Film
Layer；In the present embodiment, the vacuum of magnetic control sputtering system is 0.8 × 10-3Pa；In the present embodiment, in argon oxygen gas mixture, oxygen and
The mol ratio of argon gas is 0.2:1, the pressure of argon oxygen gas mixture is 2Pa；In the present embodiment, BaSnO3Target and Cu targets respectively with
The distance between glass substrate is 80mm；
Step 3, the BaSnO obtained under 80W sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under 80W sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made
Sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment, is BaSnO3/Cu/BaSnO3Sandwich, due to
BaSnO3 is a kind of typical cubic perovskite structure oxide, and is n-type wide bandgap semiconductor materials, and its forbidden energy gap is
3.4eV, further, since Cu price is cheap relative to metal prices such as gold, silver and platinum, therefore, the sandwich electrically conducting transparent
Film relative to single layer structure of the prior art transparent conductive film, with cost is low, resistivity is low, thickness of thin, chemistry
The advantage that stability is good and adsorptivity of between substrate is strong.
Resistivity is tested：
A kind of sandwich transparent conductive film of the present invention, by changing every layer of BaSnO3The thickness of film layer, and change
Become the thickness of Cu film layers, and make it that the resistivity of prepared sandwich transparent conductive film is different.Specific experiment number
According to being shown in Table 1.
The BaSnO of table 13The tables of data of film layer different square resistance corresponding with the different-thickness of Cu film layers
| Cu thickness degree（nm） | BaSnO3Thickness degree（nm） | Square resistance（Ω/□） |
| 3 | 50 | 228 |
| 7 | 50 | 23 |
| 10 | 50 | 10 |
| 13 | 50 | 7 |
| 10 | 10 | 9 |
| 10 | 30 | 13 |
| 10 | 100 | 21 |
As shown in Table 1, by controlling every layer of BaSnO3The thickness of film layer and the thickness for controlling Cu film layers, are enabled to
Prepared sandwich transparent conductive film has different square resistances, wherein, a kind of sandwich produced by the present invention
Transparent conductive film, minimum 7 Ω of square resistance/ show a kind of conduction of sandwich transparent conductive film of the present invention
Performance is good, resistivity is low.
Finally it should be noted that above example is merely to illustrate technical scheme rather than to present invention protection
The limitation of scope, although being explained in detail with reference to preferred embodiment to the present invention, one of ordinary skill in the art should manage
Solution, technical scheme can be modified or equivalent substitution, without departing from technical solution of the present invention essence and
Scope.
Claims (5)
1. a kind of preparation method of sandwich transparent conductive film, it is characterised in that：The transparent conductive film is BaSnO3/
Cu/BaSnO3Sandwich, i.e. the BaSnO including stacking gradually3Film layer, Cu film layers and BaSnO3Film layer；
A kind of preparation method of described sandwich transparent conductive film, it comprises the following steps：
Step one, by BaSnO3Target and Cu targets load in the cavity of magnetic control sputtering system；
Step 2, the cavity of magnetic control sputtering system is evacuated to certain vacuum, is then made using argon oxygen gas mixture or argon gas
It is sputter gas to sputter BaSnO3Target, progress deposits and obtains BaSnO on substrate under certain sputtering power3Film
Layer；
Step 3, the BaSnO obtained under certain sputtering power in step 23Cu film layers are sputtered in film layer；
Step 4, BaSnO is sputtered under certain sputtering power in the Cu film layers that step 3 is obtained3Film layer, is made interlayer
Structured transparent conductive film；
In the step 2, the vacuum of the magnetic control sputtering system is 0.1 × 10-3Pa~1.0×10-3Pa；
In the step 2, in the argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.1 ~ 0.5:1；The argon oxygen mixing
The pressure of gas or the argon gas is the Pa of 0.3 Pa ~ 3；
It is described Step 2: in step 3 and step 4, the sputtering power is 30W ~ 100W；
The BaSnO3Target and the Cu targets are respectively 30mm~100mm with the distance between the substrate.
2. a kind of preparation method of sandwich transparent conductive film according to claim 1, it is characterised in that：Every layer institute
State BaSnO3The thickness of film layer is 10nm~100nm, and the thickness of the Cu film layers is 3nm~20nm.
3. a kind of preparation method of sandwich transparent conductive film according to claim 2, it is characterised in that：Every layer institute
State BaSnO3The thickness of film layer is 30nm~50nm, and the thickness of the Cu film layers is 8nm~11nm.
4. a kind of preparation method of sandwich transparent conductive film according to claim 1, it is characterised in that：The step
In rapid one, the BaSnO3The purity of target and the Cu targets is 99.99%.
5. a kind of preparation method of sandwich transparent conductive film according to claim 1, it is characterised in that：The step
In rapid two, the substrate is glass substrate, quartz substrate or Sapphire Substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610036475.5A CN105489270B (en) | 2016-01-20 | 2016-01-20 | A kind of sandwich transparent conductive film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610036475.5A CN105489270B (en) | 2016-01-20 | 2016-01-20 | A kind of sandwich transparent conductive film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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Effective date of registration: 20200904 Address after: 239000 Xincheng community, industrial park, mentaizi Town, Fengyang County, Chuzhou City, Anhui Province Patentee after: Fengyang fusion New Material Co., Ltd Address before: 523808 Dongguan University of Technology, Songshan Road, Dongguan, 1, University Road, Guangdong Patentee before: DONGGUAN University OF TECHNOLOGY |