CN105489270A - Sandwich structure transparent conductive thin-film and preparation method thereof - Google Patents
Sandwich structure transparent conductive thin-film and preparation method thereof Download PDFInfo
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- CN105489270A CN105489270A CN201610036475.5A CN201610036475A CN105489270A CN 105489270 A CN105489270 A CN 105489270A CN 201610036475 A CN201610036475 A CN 201610036475A CN 105489270 A CN105489270 A CN 105489270A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention relates to the technical field of functional thin-film material, and particularly relates to a sandwich structure transparent conductive thin-film and a preparation method thereof. The transparent conductive thin-film has a BaSnO3/Cu/BaSnO3 sandwich structure, i.e. the transparent conductive thin-film comprises a BaSnO3 thin-film layer, a Cu thin-film layer and a BaSnO3 thin-film layer which are laminated in turn. The preparation method of the sandwich structure transparent conductive thin-film comprises the steps that step one, BaSnO3 target material and Cu target material are arranged in the cavity of a magnetron spluttering system; step two, deposition is performed on a substrate so that the BaSnO3 thin-film layer is obtained; step three, the Cu thin-film layer is spluttered on the BaSnO3 thin-film layer; and step four, the BaSnO3 thin-film layer is spluttered on the Cu thin-film layer so that the sandwich structure transparent conductive thin-film is prepared. The sandwich structure transparent conductive thin-film has advantages of being low in cost, low in resistivity, great in conductivity, low in thickness, great in chemical stability and high in adsorption with the substrate.
Description
Technical field
The present invention relates to the technical field of film material with function, particularly relate to a kind of sandwich transparent conductive film and preparation method thereof.
Background technology
Transparent conductive oxide (TCO) film, owing to having high transmission of visible light and low resistivity, has vast potential for future development in antistatic coating, anti-icing equipment, solar cell, touch display screen, flat panel display, heating element, optical coating and transparent optical electronics etc.At present, most widely used transparent conductive oxide film is indium system oxide (ITO) film, its comprehensive photoelectric properties is excellent, be most widely used, but indium is poisonous, and exist expensive, poor stability, in hydrogen plasma atmosphere, the problem such as to be easily reduced, therefore people try hard to find a kind of cheap and ITO alternate material of excellent performance.
Ultra-thin conductive metal level also can as nesa coating, but applicablely at present only has the resistivity such as gold, silver and platinum low and the noble metal that chemical stability is good, but gold and platinum cost intensive, limit it and apply.
Transparent conductive film of the prior art, mostly be the transparent conductive film of single layer structure, the transparent conductive film of this single layer structure, have that resistivity is high, thickness low LCL is thin, the defect of poor chemical stability, and the adsorptivity between the transparent conductive film of this single layer structure and substrate is strong not, causes being unfavorable for actual production.
Summary of the invention
An object of the present invention is to provide for weak point of the prior art that a kind of cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong sandwich transparent conductive film of adsorptivity between substrate.
Two of object of the present invention is to provide for weak point of the prior art that a kind of cost is low, resistivity is low, thickness is thin, chemical stability is good and and the preparation method of the strong sandwich transparent conductive film of adsorptivity between substrate.
For one of achieving the above object, the present invention is achieved through the following technical solutions.
There is provided a kind of sandwich transparent conductive film, described transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.
Every layer of described BaSnO
3the thickness of thin layer is 10nm ~ 100nm, and the thickness of described Cu thin layer is 3nm ~ 20nm.
Preferably, every layer of described BaSnO
3the thickness of thin layer is 30nm ~ 50nm, and the thickness of described Cu thin layer is 8nm ~ 11nm.
For achieve the above object two, the present invention is achieved through the following technical solutions.
There is provided a kind of preparation method of sandwich transparent conductive film, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture or argon gas as sputter gas in order to sputter BaSnO
3target, carries out deposition and obtains BaSnO under certain sputtering power on substrate
3thin layer;
Step 3, at the BaSnO that step 2 obtains under certain sputtering power
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under certain sputtering power sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
In technique scheme, in described step one, described BaSnO
3the purity of target and described Cu target is 99.99%.
In technique scheme, in described step 2, the vacuum degree of described magnetic control sputtering system is 0.1 × 10
-3pa ~ 1.0 × 10
-3pa.
In technique scheme, in described step 2, in described argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.1 ~ 0.5:1; The pressure of described argon oxygen gas mixture or argon gas is 0.3Pa ~ 3Pa.
In technique scheme, in described step 2, described substrate is glass substrate, quartz substrate or Sapphire Substrate.
In technique scheme, in described step 2, step 3 and step 4, described sputtering power is 30W ~ 100W.
In technique scheme, described BaSnO
3target and the distance of described Cu target respectively and between described substrate are 30mm ~ 100mm.
Beneficial effect of the present invention:
(1) a kind of sandwich transparent conductive film provided by the invention, is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.Wherein, conducting electricity very well of a kind of sandwich transparent conductive film that the present invention obtains, and resistivity is low to moderate 5 × 10
-5.
(2) a kind of sandwich transparent conductive film provided by the invention, is BaSnO
3/ Cu/BaSnO
-3sandwich, due to BaSnO
3thin layer is relative to ZnSnO of the prior art
3thin layer (Zn is Volatile Elements), not containing Volatile Elements, therefore, makes the chemical stability of this sandwich transparent conductive film good, and BaSnO
3thin layer is relative to ZnSnO of the prior art
3the light transmission of thin layer is better, therefore, makes the transmissivity of this sandwich transparent conductive film high.
(3) preparation method of a kind of sandwich transparent conductive film provided by the invention, have preparation method simple, production cost is low, and can be applicable to the feature of large-scale production.
Accompanying drawing explanation
Fig. 1 is the transmissivity figure of a kind of sandwich transparent conductive film of the present invention.In Fig. 1, be within the scope of 400nm ~ 800nm at wavelength, the transmissivity of a kind of sandwich transparent conductive film of the present invention is 70% ~ 90%.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
embodiment 1.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 50nm, and the thickness of Cu thin layer is 13nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture as sputter gas in order to sputter BaSnO
3target, carries out deposition on a glass substrate and obtains BaSnO under the sputtering power of 60W
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 0.5 × 10
-3pa; In the present embodiment, in argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.3:1, and the pressure of argon oxygen gas mixture is 1.5Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between glass substrate are 60mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 60W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 60W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.Wherein, a kind of square resistance of sandwich transparent conductive film that the present embodiment obtains is 7 Ω/.
embodiment 2.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 10nm, and the thickness of Cu thin layer is 10nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture as sputter gas in order to sputter BaSnO
3target, carries out deposition and obtains BaSnO under the sputtering power of 30W in quartz substrate
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 0.1 × 10
-3pa; In the present embodiment, in argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.5:1, and the pressure of argon oxygen gas mixture is 0.3Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between quartz substrate are 30mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 30W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 30W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.Wherein, a kind of square resistance of sandwich transparent conductive film that the present embodiment obtains is 9 Ω/.
embodiment 3.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 50nm, and the thickness of Cu thin layer is 10nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture as sputter gas in order to sputter BaSnO
3target, carries out deposition on a sapphire substrate and obtains BaSnO under the sputtering power of 100W
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 1.0 × 10
-3pa; In the present embodiment, in argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.1:1, and the pressure of argon oxygen gas mixture is 3Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between Sapphire Substrate are 100mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 100W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 100W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.Wherein, a kind of square resistance of sandwich transparent conductive film that the present embodiment obtains is 10 Ω/.
embodiment 4.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 30nm, and the thickness of Cu thin layer is 10nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture as sputter gas in order to sputter BaSnO
3target, carries out deposition on a glass substrate and obtains BaSnO under the sputtering power of 40W
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 0.3 × 10
-3pa; In the present embodiment, in argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.4:1, and the pressure of argon oxygen gas mixture is 1Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between glass substrate are 40mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 40W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 40W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.Wherein, a kind of square resistance of sandwich transparent conductive film that the present embodiment obtains is 13 Ω/.
embodiment 5.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 100nm, and the thickness of Cu thin layer is 20nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon gas as sputter gas in order to sputter BaSnO
3target, carries out deposition on a glass substrate and obtains BaSnO under the sputtering power of 80W
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 0.8 × 10
-3pa; In the present embodiment, the pressure of argon gas is 2Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between glass substrate are 80mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 80W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 80W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.
embodiment 6.
A kind of sandwich transparent conductive film of the present embodiment, transparent conductive film is BaSnO
3/ Cu/BaSnO
-3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.In the present embodiment, every layer of BaSnO
3the thickness of thin layer is 50nm, and the thickness of Cu thin layer is 3nm.
The preparation method of a kind of sandwich transparent conductive film of the present embodiment, it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system; Wherein, BaSnO
3the purity of target and described Cu target is 99.99%;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture as sputter gas in order to sputter BaSnO
3target, carries out deposition on a glass substrate and obtains BaSnO under the sputtering power of 80W
3thin layer; In the present embodiment, the vacuum degree of magnetic control sputtering system is 0.8 × 10
-3pa; In the present embodiment, in argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.2:1, and the pressure of argon oxygen gas mixture is 2Pa; In the present embodiment, BaSnO
3target and the distance of Cu target respectively and between glass substrate are 80mm;
Step 3, at the BaSnO that step 2 obtains under the sputtering power of 80W
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under the sputtering power of 80W sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
A kind of sandwich transparent conductive film of the present embodiment is BaSnO
3/ Cu/BaSnO
-3sandwich, because BaSnO3 is a kind of typical cubic perovskite structure oxide, and be N-shaped wide bandgap semiconductor materials, its forbidden energy gap is 3.4eV, in addition, because the price of Cu is cheap relative to the metal price such as gold, silver and platinum, therefore, this sandwich transparent conductive film, relative to the transparent conductive film of single layer structure of the prior art, has that cost is low, resistivity is low, thickness is thin, chemical stability is good and and the strong advantage of adsorptivity between substrate.
Resistivity is tested:
A kind of sandwich transparent conductive film of the present invention, by changing every layer of BaSnO
3the thickness of thin layer, and the thickness changing Cu thin layer, and make the resistivity of prepared sandwich transparent conductive film different.Concrete experimental data is in table 1.
Table 1BaSnO
3the tables of data of the square resistance that thin layer is corresponding different with the different-thickness of Cu thin layer
| Cu layer thickness (nm) | BaSnO 3Layer thickness (nm) | Square resistance (Ω/) |
| 3 | 50 | 228 |
| 7 | 50 | 23 |
| 10 | 50 | 10 |
| 13 | 50 | 7 |
| 10 | 10 | 9 |
| 10 | 30 | 13 |
| 10 | 100 | 21 |
As shown in Table 1, by controlling every layer of BaSnO
3the thickness of thin layer and the thickness of control Cu thin layer, prepared sandwich transparent conductive film can be made to have different square resistances, wherein, a kind of sandwich transparent conductive film that the present invention obtains, square resistance is minimum is 7 Ω/, shows that the conducting electricity very well of a kind of sandwich transparent conductive film of the present invention, resistivity are low.
Finally should be noted that; above embodiment is only for illustration of technical scheme of the present invention but not limiting the scope of the invention; although be explained in detail the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (10)
1. a sandwich transparent conductive film, is characterized in that: described transparent conductive film is BaSnO
3/ Cu/BaSnO
3sandwich, namely comprise the BaSnO stacked gradually
3thin layer, Cu thin layer and BaSnO
3thin layer.
2. a kind of sandwich transparent conductive film according to claim 1, is characterized in that: every layer of described BaSnO
3the thickness of thin layer is 10nm ~ 100nm, and the thickness of described Cu thin layer is 3nm ~ 20nm.
3. a kind of sandwich transparent conductive film according to claim 2, is characterized in that: every layer of described BaSnO
3the thickness of thin layer is 30nm ~ 50nm, and the thickness of described Cu thin layer is 8nm ~ 11nm.
4. the preparation method of a kind of sandwich transparent conductive film described in claims 1 to 3 any one, is characterized in that: it comprises the following steps:
Step one, by BaSnO
3target and Cu target load in the cavity of magnetic control sputtering system;
Step 2, is evacuated to certain vacuum degree by the cavity of magnetic control sputtering system, then uses argon oxygen gas mixture or argon gas as sputter gas in order to sputter BaSnO
3target, carries out deposition and obtains BaSnO under certain sputtering power on substrate
3thin layer;
Step 3, at the BaSnO that step 2 obtains under certain sputtering power
3thin layer sputters Cu thin layer;
Step 4, the Cu thin layer obtained in step 3 under certain sputtering power sputters BaSnO
3thin layer, obtained sandwich transparent conductive film.
5. the preparation method of a kind of sandwich transparent conductive film according to claim 4, is characterized in that: in described step one, described BaSnO
3the purity of target and described Cu target is 99.99%.
6. the preparation method of a kind of sandwich transparent conductive film according to claim 4, is characterized in that: in described step 2, and the vacuum degree of described magnetic control sputtering system is 0.1 × 10
-3pa ~ 1.0 × 10
-3pa.
7. the preparation method of a kind of sandwich transparent conductive film according to claim 4, is characterized in that: in described step 2, and in described argon oxygen gas mixture, the mol ratio of oxygen and argon gas is 0.1 ~ 0.5:1; The pressure of described argon oxygen gas mixture or described argon gas is 0.3Pa ~ 3Pa.
8. the preparation method of a kind of sandwich transparent conductive film according to claim 4, is characterized in that: in described step 2, and described substrate is glass substrate, quartz substrate or Sapphire Substrate.
9. the preparation method of a kind of sandwich transparent conductive film according to claim 4, it is characterized in that: in described step 2, step 3 and step 4, described sputtering power is 30W ~ 100W.
10. the preparation method of a kind of sandwich transparent conductive film according to claim 4, is characterized in that: described BaSnO
3target and the distance of described Cu target respectively and between described substrate are 30mm ~ 100mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610036475.5A CN105489270B (en) | 2016-01-20 | 2016-01-20 | A kind of sandwich transparent conductive film and preparation method thereof |
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| CN108517493A (en) * | 2018-03-28 | 2018-09-11 | 天津大学 | A kind of preparation method of ZnO/BS/Cu/ZnO multi-layer-structure transparent conductive films |
| CN108517500A (en) * | 2018-03-28 | 2018-09-11 | 天津大学 | A kind of preparation method of ST/Ag/ST structures multi-layer transparent electroconductive film |
| CN111225993A (en) * | 2017-12-22 | 2020-06-02 | 株式会社Lg化学 | Method for manufacturing transparent conductive film |
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| CN111225993A (en) * | 2017-12-22 | 2020-06-02 | 株式会社Lg化学 | Method for manufacturing transparent conductive film |
| CN111225993B (en) * | 2017-12-22 | 2022-04-01 | 株式会社Lg化学 | Method for manufacturing transparent conductive film |
| US11624109B2 (en) | 2017-12-22 | 2023-04-11 | Lg Chem, Ltd. | Method for manufacturing transparent conductive film |
| CN108517493A (en) * | 2018-03-28 | 2018-09-11 | 天津大学 | A kind of preparation method of ZnO/BS/Cu/ZnO multi-layer-structure transparent conductive films |
| CN108517500A (en) * | 2018-03-28 | 2018-09-11 | 天津大学 | A kind of preparation method of ST/Ag/ST structures multi-layer transparent electroconductive film |
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| CN105489270B (en) | 2017-07-25 |
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Effective date of registration: 20200904 Address after: 239000 Xincheng community, industrial park, mentaizi Town, Fengyang County, Chuzhou City, Anhui Province Patentee after: Fengyang fusion New Material Co., Ltd Address before: 523808 Dongguan University of Technology, Songshan Road, Dongguan, 1, University Road, Guangdong Patentee before: DONGGUAN University OF TECHNOLOGY |