CN102505110A - Method of plating non-conductive film in vacuum - Google Patents
Method of plating non-conductive film in vacuum Download PDFInfo
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- CN102505110A CN102505110A CN2011104183277A CN201110418327A CN102505110A CN 102505110 A CN102505110 A CN 102505110A CN 2011104183277 A CN2011104183277 A CN 2011104183277A CN 201110418327 A CN201110418327 A CN 201110418327A CN 102505110 A CN102505110 A CN 102505110A
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- film
- glass baseplate
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- vacuum
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Abstract
The invention provides a method of plating a non-conductive film in vacuum. The method comprises the following steps: providing a glass substrate; pre-treating the glass substrate so as to realize that the surface of the glass substrate is clean; loading the pre-treated glass substrate on a substrate rack, delivering the substrate rack to a vacuum chamber by virtue of a transmission system; setting a film material or a target material in the vacuum chamber, heating the film material or bombarding the target material so as to deposit the film material or the target material on the surface of the glass substrate to form a film, wherein the thickness of the film is between 10nm and 2,000nm, and the resistance of the film is more than 1M omega; and delivering the glass substrate with the plated film out of the vacuum chamber by virtue of the transmission system. The method provided by the invention has the following beneficial effects: 1, strong decoration, wherein different optical interference can be formed by controlling the thickness of the film and the proportion of materials in the film, so that decorative films of various colors can be produced; and 2, excellent insulation, wherein the resistance of the film is more than 1M omega by controlling the thickness of the film and the proportion of materials in the film, so that excellent insulation is formed, and contact and remote signal transfer are not influenced.
Description
[technical field]
The present invention relates to the method for vacuum plating, relate in particular to the method that a kind of vacuum is plated non-conductive film.
[background technology]
At present, the plated film ambetti has obtained using widely in products such as household electrical appliances, and special operating panel, show state panel, remote control reception panel etc. have obtained number of applications; And the conventional glass decorating film is a conducting film, is used in to touch or during teleswitch, because of the conducting film shielded signal or be communicated with the touch point and can't use; In order to address this problem; Can only conducting film local etching, strip have been destroyed the integrity of film, aesthetic property has been lost ornamental requirement.
[summary of the invention]
The present invention is directed to that the deficiency that can only plate conducting film on glass provides a kind of method of plating non-conductive film in vacuum on glass in the prior art.
The present invention realizes through following technical scheme: a kind of vacuum is plated the method for non-conductive film, may further comprise the steps:
(1) glass baseplate is provided;
(2) glass baseplate is carried out pre-treatment, so that the cleaning surfaces of glass baseplate;
(3) will be loaded on the substrate frame through the glass baseplate of pre-treatment, substrate frame imported Vakuumkammer by transmission system;
(4) in Vakuumkammer, be provided with coating materials or target, heating coating materials or bombardment target make coating materials or target be deposited on the glass baseplate surface and form film, the thickness of film: 10nm-2000nm, and the resistance of film is greater than 1M Ω;
The glass baseplate that (5) will plate film is exported Vakuumkammer by transmission system.
Do further to set forth in the face of above technical scheme down:
Said glass baseplate is carried out pre-treatment, pre-treatment comprises with purity and comes the glass cleaning substrate surface greater than the pure water of 15M Ω.
Said step (4) is an evaporation coating, and step is with the electron beam gun in the Vakuumkammer, behind the feeding high voltage electric; Electron beam gun sends energetic ion stream; Ionic current heating coating materials makes the coating materials vaporization, and the coating materials of vaporization is deposited on the glass baseplate surface; When sedimentary film reaches the design thickness, send signal by the film thickness monitoring appearance electron beam gun outage is quit work.
Said step (4) is a sputter coating, and step is in vacuum environment, to feed a spot of Ar or Ar and O earlier
2Mixed gas or Ar and N
2Mixed gas, make the vacuum tightness in the Vakuumkammer reach 10
-1Pa adds the voltage of 500V-1000V on target, make the ionization of gas in the Vakuumkammer; Ionized ion bombards target under effect of electric field; Target is overflowed with the form of atom and be deposited on the surface of glass baseplate, the speed of adjustment transmission system, thereby the thickness of adjustment film; The velocity range 0.2m/min-12m/min of transmission system, the thickness 10nm-2000nm of film.
Said coating materials is SiO
2, Sn, In, CrO, TiO
2, Al
2O
3, Nb
2O
5
Said target is Si, Sn, In, Cr, Ti, Al, Nb and composition thereof and SiO
2, SnO, TiO
2, CrO, Nb
2O
5
The material of said film is: the nitride of the oxide compound of Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb.
The ratio of Si, Sn, In, Cr, Ti, Al, Nb can be adjusted by requirement of client in coating materials or the target, makes that the film on the glass baseplate can demonstrate distinct colors and conductivity.
Beneficial effect of the present invention is: one of which, ornamental strong, the ratio of material forms different optical interference in thickness through the control film and the film, can process versicolor decorating film.
Two, have good insulation performance property, through the ratio of material in thickness and the film of control film, the resistance value that makes film forms good insulation performance greater than 1M Ω, does not influence the transmission of touch and remote signal.
[embodiment]
Embodiment 1
Method in that the glass baseplate surface vacuum plates non-conductive film may further comprise the steps:
(1) glass baseplate is provided;
(2) glass baseplate is carried out pre-treatment, so that the cleaning surfaces of glass baseplate;
(3) will be loaded on the substrate frame through the glass baseplate of pre-treatment, substrate frame imported Vakuumkammer by transmission system;
(4) in Vakuumkammer, be provided with coating materials, the heating coating materials makes coating materials be deposited on the glass baseplate surface and forms film, the thickness of film: 10nm-2000nm, and the resistance of film is greater than 1M Ω;
The glass baseplate that (5) will plate film is exported Vakuumkammer by transmission system.
Do further to set forth in the face of above technical scheme down:
Said glass baseplate is carried out pre-treatment, pre-treatment comprises with purity and comes the glass cleaning substrate surface greater than the pure water of 15M Ω.
Said step (4) is an evaporation coating, and step is with the electron beam gun in the Vakuumkammer, behind the feeding high voltage electric; Electron beam gun sends energetic ion stream; Ionic current heating coating materials makes the coating materials vaporization, and the coating materials of vaporization is deposited on the glass baseplate surface; When sedimentary film reaches the design thickness, send signal by the film thickness monitoring appearance electron beam gun outage is quit work.
Said coating materials is SiO
2, Sn, In, CrO, TiO
2, Al
2O
3, Nb
2O
5
The material of said film is: the nitride of the oxide compound of Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb.
The ratio of Si, Sn, In, Cr, Ti, Al, Nb can be adjusted by requirement of client in the coating materials, makes that the film on the glass baseplate can demonstrate distinct colors and conductivity.
Embodiment 2
Method in that the glass baseplate surface vacuum plates non-conductive film may further comprise the steps:
(1) glass baseplate is provided;
(2) glass baseplate is carried out pre-treatment, so that the cleaning surfaces of glass baseplate;
(3) will be loaded on the substrate frame through the glass baseplate of pre-treatment, substrate frame imported Vakuumkammer by transmission system;
(4) in Vakuumkammer, be provided with target, the bombardment target makes target be deposited on the glass baseplate surface and forms film, the thickness of film: 10nm-2000nm, and the resistance of film is greater than 1M Ω;
The glass baseplate that (5) will plate film is exported Vakuumkammer by transmission system.
Do further to set forth in the face of above technical scheme down:
Said glass baseplate is carried out pre-treatment, pre-treatment comprises with purity and comes the glass cleaning substrate surface greater than the pure water of 15M Ω.
Said step (4) is a sputter coating, and step is in vacuum environment, to feed a spot of Ar or Ar and O earlier
2Mixed gas or Ar and N
2Mixed gas, make the vacuum tightness in the Vakuumkammer reach 10
-1Pa adds the voltage of 500V-1000V on target, make the ionization of gas in the Vakuumkammer; Ionized ion bombards target under effect of electric field; Target is overflowed with the form of atom and be deposited on the surface of glass baseplate, the speed of adjustment transmission system, thereby the thickness of adjustment film; The velocity range 0.2m/min-12m/min of transmission system, the thickness 10nm-2000nm of film.
Said target is Si, Sn, In, Cr, Ti, Al, Nb and composition thereof and SiO
2, SnO, TiO
2, CrO, Nb
2O
5
The material of said film is: the nitride of the oxide compound of Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb.
The ratio of Si, Sn, In, Cr, Ti, Al, Nb can be adjusted by requirement of client in the target, makes that the film on the glass baseplate can demonstrate distinct colors and conductivity.
According to the announcement and the instruction of above-mentioned specification sheets, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned embodiment.Therefore, the embodiment that discloses and describe above the present invention is not limited to also should fall in the protection domain of claim of the present invention modifications more of the present invention and change.In addition, although used some specific terms in this specification sheets, these terms are explanation for ease just, the present invention is not constituted any restriction.
Claims (7)
1. method that vacuum is plated non-conductive film is characterized in that may further comprise the steps:
(1) glass baseplate is provided;
(2) glass baseplate is carried out pre-treatment, so that the cleaning surfaces of glass baseplate;
(3) will be loaded on the substrate frame through the glass baseplate of pre-treatment, substrate frame imported Vakuumkammer by transmission system;
(4) in Vakuumkammer, be provided with coating materials or target, heating coating materials or bombardment target make coating materials or target be deposited on the glass baseplate surface and form film, the thickness of film: 10nm-2000nm, and the resistance of film is greater than 1M Ω;
The glass baseplate that (5) will plate film is exported Vakuumkammer by transmission system.
2. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: said glass baseplate is carried out pre-treatment, pre-treatment comprises with purity and comes the glass cleaning substrate surface greater than the pure water of 15M Ω.
3. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: said step (4) is an evaporation coating, and step is with the electron beam gun in the Vakuumkammer; After feeding high voltage electric, electron beam gun sends energetic ion stream, ionic current heating coating materials; Make the coating materials vaporization; The coating materials of vaporization is deposited on the glass baseplate surface, when sedimentary film reaches the design thickness, sends signal by the film thickness monitoring appearance electron beam gun outage is quit work.
4. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: said step (4) is a sputter coating, and step is in vacuum environment, to feed a spot of Ar or Ar and O earlier
2Mixed gas or Ar and N
2Mixed gas, make the vacuum tightness in the Vakuumkammer reach 10
-1Pa adds the voltage of 500V-1000V on target, make the ionization of gas in the Vakuumkammer; Ionized ion bombards target under effect of electric field; Target is overflowed with the form of atom and be deposited on the surface of glass baseplate, the speed of adjustment transmission system, thereby the thickness of adjustment film; The velocity range 0.2m/min-12m/min of transmission system, the thickness 10nm-2000nm of film.
5. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: said coating materials is SiO
2, Sn, In, CrO, TiO
2, Al
2O
3, Nb
2O
5
6. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: said target is Si, Sn, In, Cr, Ti, Al, Nb and composition thereof and SiO
2, SnO, TiO
2, CrO, Nb
2O
5
7. vacuum according to claim 1 is plated the method for non-conductive film, it is characterized in that: the material of said film is: the nitride of the oxide compound of Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb or Si, Sn, In, Cr, Ti, Al, Nb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104183277A CN102505110A (en) | 2011-12-14 | 2011-12-14 | Method of plating non-conductive film in vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104183277A CN102505110A (en) | 2011-12-14 | 2011-12-14 | Method of plating non-conductive film in vacuum |
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|---|---|
| CN102505110A true CN102505110A (en) | 2012-06-20 |
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|---|---|---|---|
| CN2011104183277A Pending CN102505110A (en) | 2011-12-14 | 2011-12-14 | Method of plating non-conductive film in vacuum |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108385063A (en) * | 2018-03-30 | 2018-08-10 | 江西泽发光电有限公司 | A kind of plating film formulation that drift sand texture ice auger is black |
| CN109437582A (en) * | 2018-12-03 | 2019-03-08 | 仙游县元生智汇科技有限公司 | A kind of production method of the 3D glass with anti-glare |
| CN111489956A (en) * | 2020-04-07 | 2020-08-04 | 武汉大学 | AlCrNbSiTi high-entropy alloy oxide insulating film material for transistor and preparation method thereof |
| WO2023005136A1 (en) * | 2021-07-29 | 2023-02-02 | 浙江水晶光电科技股份有限公司 | Neutral density filter, and preparation method and preparation device therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429644A (en) * | 2008-03-21 | 2009-05-13 | 中国科学院上海硅酸盐研究所 | Production method of metal or metal oxide nano particle |
| KR20090128023A (en) * | 2008-06-10 | 2009-12-15 | 주식회사 인광옵텍 | A thin flom for coating |
| CN101633564A (en) * | 2009-08-06 | 2010-01-27 | 钱中良 | Method for manufacturing glass mirror from gray to black by vacuum film plating machine |
| CN101898871A (en) * | 2009-05-25 | 2010-12-01 | 天津南玻节能玻璃有限公司 | Low-reflection plating glass and preparation method thereof |
-
2011
- 2011-12-14 CN CN2011104183277A patent/CN102505110A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429644A (en) * | 2008-03-21 | 2009-05-13 | 中国科学院上海硅酸盐研究所 | Production method of metal or metal oxide nano particle |
| KR20090128023A (en) * | 2008-06-10 | 2009-12-15 | 주식회사 인광옵텍 | A thin flom for coating |
| CN101898871A (en) * | 2009-05-25 | 2010-12-01 | 天津南玻节能玻璃有限公司 | Low-reflection plating glass and preparation method thereof |
| CN101633564A (en) * | 2009-08-06 | 2010-01-27 | 钱中良 | Method for manufacturing glass mirror from gray to black by vacuum film plating machine |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108385063A (en) * | 2018-03-30 | 2018-08-10 | 江西泽发光电有限公司 | A kind of plating film formulation that drift sand texture ice auger is black |
| CN109437582A (en) * | 2018-12-03 | 2019-03-08 | 仙游县元生智汇科技有限公司 | A kind of production method of the 3D glass with anti-glare |
| CN111489956A (en) * | 2020-04-07 | 2020-08-04 | 武汉大学 | AlCrNbSiTi high-entropy alloy oxide insulating film material for transistor and preparation method thereof |
| CN111489956B (en) * | 2020-04-07 | 2023-04-07 | 武汉大学 | AlCrNbSiTi high-entropy alloy oxide insulating film material for transistor and preparation method thereof |
| WO2023005136A1 (en) * | 2021-07-29 | 2023-02-02 | 浙江水晶光电科技股份有限公司 | Neutral density filter, and preparation method and preparation device therefor |
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Application publication date: 20120620 |