KR101298897B1 - Ito target for a coating glass of a touch panel - Google Patents

Ito target for a coating glass of a touch panel Download PDF

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KR101298897B1
KR101298897B1 KR1020110061132A KR20110061132A KR101298897B1 KR 101298897 B1 KR101298897 B1 KR 101298897B1 KR 1020110061132 A KR1020110061132 A KR 1020110061132A KR 20110061132 A KR20110061132 A KR 20110061132A KR 101298897 B1 KR101298897 B1 KR 101298897B1
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ito
touch panel
ito target
target
present
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KR20120000516A (en
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박성완
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주식회사 유아이디
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 터치 패널의 코팅 유리용 ITO 타겟에 관한 것이다. 상기 ITO 타겟은 틴옥사이드(SnO2), 인듐옥사이드(In2O3) 및 티타늄(Ti) 및 아연(Zn) 중 적어도 하나의 첨가물을 포함한다. 여기서, 상기 첨가물은 0.05~0.1wt%의 중량비를 가진다. The present invention relates to an ITO target for coated glass of a touch panel. The ITO target includes tin oxide (SnO 2 ), indium oxide (In 2 O 3 ) and at least one additive of titanium (Ti) and zinc (Zn). Here, the additive has a weight ratio of 0.05 ~ 0.1wt%.

Description

터치 패널의 코팅 유리용 ＩＴＯ 타겟{ITO TARGET FOR A COATING GLASS OF A TOUCH PANEL}ITO target for coating glass of touch panel {ITO TARGET FOR A COATING GLASS OF A TOUCH PANEL}

본 발명은 터치 패널의 코팅 유리용 ITO 타겟에 관한 것이다. The present invention relates to an ITO target for coated glass of a touch panel.

현재, 널리 사용되는 터치 패널은 높은 투과율을 요구하므로, ITO 전극을 최대한 얇게 하면서 저항을 맞춰주는 것이 중요하다. 그러나, 현재, ITO 전극을 제조하기 위한 ITO 타겟의 밀도가 낮아서 원하는 얇은 두께의 ITO 전극을 구현하기가 어려웠다. Currently, widely used touch panels require high transmittance, so it is important to match the resistance while making the ITO electrode as thin as possible. However, at present, it is difficult to implement a desired thin thickness ITO electrode because the density of the ITO target for manufacturing the ITO electrode is low.

본 발명은 터치 패널에서 내구성 높은 ITO 전극을 제조하기 위한 ITO 타겟을 제공하는 것이다.The present invention provides an ITO target for manufacturing a durable ITO electrode in a touch panel.

상기한 바와 같은 목적을 달성하기 위하여, 본 발명의 일 실시예에 따른 터치 패널의 코팅 유리에 사용되는 ITO 전극을 제조하기 위한 ITO 타겟은 틴옥사이드(SnO2); 인듐옥사이드(In2O3); 및 티타늄(Ti) 및 아연(Zn) 중 적어도 하나의 첨가물을 포함한다. 여기서, 상기 첨가물은 0.05~0.1wt%의 중량비를 가지며, 인듐옥사이드(In2O3)는 97.95~97.90wt%의 중량비를 가진다. In order to achieve the object as described above, the ITO target for producing an ITO electrode used in the coated glass of the touch panel according to an embodiment of the present invention is tin oxide (SnO 2 ); Indium oxide (In 2 O 3 ); And an additive of at least one of titanium (Ti) and zinc (Zn). Here, the additive has a weight ratio of 0.05 ~ 0.1wt%, Indium oxide (In 2 O 3 ) has a weight ratio of 97.95 ~ 97.90wt%.

삭제delete

본 발명에 따른 ITO 타겟은 Ti, Zn를 0.05 ~ 0.1wt% 첨가하고 있어서 ITO 타겟의 밀도가 향상될 수 있다. 결과적으로, ITO 타겟의 깨짐, 아킹, 증착속도 감소, 흑화현상 등이 현저하게 감소할 수 있으며, ITO 전극이 원하는 저항 및 내구성을 가지고 구현될 수 있다. In the ITO target according to the present invention, since 0.05 and 0.1 wt% of Ti and Zn are added, the density of the ITO target may be improved. As a result, cracking, arcing, reduced deposition rate, blackening, etc. of the ITO target can be significantly reduced, and the ITO electrode can be implemented with desired resistance and durability.

도 1은 본 발명의 일 실시예에 따른 터치 패널용 코팅 유리를 도시한 단면도이다.
도 2는 도 1의 코팅 유리의 ITO 전극을 증착하기 위한 스퍼터링 장치를 개략적으로 도시한 단면도이다. 1 is a cross-sectional view showing a coating glass for a touch panel according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a sputtering apparatus for depositing an ITO electrode of the coated glass of FIG. 1.

이하에서는 첨부된 도면들을 참조하여 본 발명의 실시예들을 자세히 설명하도록 한다. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 터치 패널용 코팅 유리를 도시한 단면도이고, 도 2는 도 1의 코팅 유리의 ITO 전극을 증착하기 위한 스퍼터링 장치를 개략적으로 도시한 단면도이다. 1 is a cross-sectional view showing a coating glass for a touch panel according to an embodiment of the present invention, Figure 2 is a schematic cross-sectional view showing a sputtering apparatus for depositing an ITO electrode of the coating glass of FIG.

본 발명은 터치 패널용 ITO 전극을 형성하기 위한 ITO 타겟을 제공하며, 터치 패널의 코팅 유리는 도 1에 도시된 바와 같이 투명 기판(100) 위에 SiO2층(102) 및 ITO 전극(104)이 순차적으로 형성된 구조를 가진다. 예를 들어, 투명 기판(100)은 0.4 ~ 1.1mm의 두께를 가지고, SiO2층(102)은 150 ~ 200nm의 두께를 가지며, ITO 전극(104)은 10 ~ 20nm의 두께를 가질 수 있다. The present invention provides an ITO target for forming an ITO electrode for a touch panel, wherein the coated glass of the touch panel has a SiO 2 layer 102 and an ITO electrode 104 on the transparent substrate 100 as shown in FIG. It has a structure formed sequentially. For example, the transparent substrate 100 may have a thickness of 0.4 to 1.1 mm, the SiO 2 layer 102 may have a thickness of 150 to 200 nm, and the ITO electrode 104 may have a thickness of 10 to 20 nm.

본 발명의 일 실시예에 따르면, ITO 전극(104)은 도 2의 스퍼터링 장치(Sputtering apparatus)를 이용하여 ITO 타겟(202)을 스퍼터(Sputter)함에 의해 기판(206) 위에 증착되어 형성될 수 있다. 여기서, 기판(206)은 SiO2층(102)이 형성되어 있는 기판(100)을 의미한다. According to an embodiment of the present invention, the ITO electrode 104 may be deposited and formed on the substrate 206 by sputtering the ITO target 202 using the sputtering apparatus of FIG. 2. . Here, the substrate 206 means the substrate 100 on which the SiO 2 layer 102 is formed.

구체적으로는, 스퍼터링 장치의 챔버(200) 내의 하부에 기판(206)이 놓여지고, 상부에 ITO 타겟(202)이 배면판(204)에 지지되어 장착된다. 이어서, 진공 펌프에 의해 챔버(200)가 진공 상태로 변화되고, 아르곤 가스(Ar)와 같은 불활성 가스가 챔버(200) 내로 주입된다. 계속하여, 전원부(210)가 ITO 타겟(202) 및 쉴드(208a 또는 208b)에 소정 전원, 예를 들어 직류 전압을 인가하면 아르곤 가스(Ar)가 글로우(glow) 방전되어 Ar+ 이온이 발생하며, 즉 플라즈마 상태로 변화된다. 이 경우, Ar+ 이온이 상기 ITO 타겟과 충돌하며(자기력을 이용하여 충돌을 활성화시킬 수 있음), 상기 충돌에 의해 ITO 타겟(202)이 스퍼터된다. 이렇게 스퍼터된 ITO는 기판(206) 위에 증착되어 ITO 전극(104)을 형성한다. Specifically, the substrate 206 is placed in the lower part of the chamber 200 of the sputtering apparatus, and the ITO target 202 is supported by the back plate 204 and mounted on the upper part. Subsequently, the chamber 200 is changed to a vacuum state by a vacuum pump, and an inert gas such as argon gas Ar is injected into the chamber 200. Subsequently, when the power supply unit 210 applies a predetermined power supply, for example, a DC voltage, to the ITO target 202 and the shield 208a or 208b, the argon gas Ar is glow discharged to generate Ar + ions. That is, the plasma state is changed. In this case, Ar + ions collide with the ITO target (which can activate the collision using magnetic force), and the ITO target 202 is sputtered by the collision. This sputtered ITO is deposited on the substrate 206 to form the ITO electrode 104.

본 발명의 일 실시예에 따르면, 전원부(210)는 펄스 직류를 발생시키며, 직류 전원(220) 및 분배 제어부(222)를 포함한다. 직류 전원(220)은 일정한 직류 전압을 발생시키며, 분배 제어부(222)는 상기 직류 전압을 그대로 또는 펄스 형태로 변형한 후 ITO 타겟(202) 및 쉴드들(208a 및 208b)로 적절하게 분배시킨다. 여기서, 상기 구형파들의 주파수는 ITO 타겟(202)이 높은 전기 저항을 가지므로 약 20㎑ 내지 150㎑로서 구동될 수 있다. According to an embodiment of the present invention, the power supply unit 210 generates a pulse direct current, and includes a direct current power source 220 and a distribution control unit 222. The DC power supply 220 generates a constant DC voltage, and the distribution controller 222 appropriately distributes the DC voltage to the ITO target 202 and the shields 208a and 208b after the DC voltage is modified as it is or in the form of a pulse. Here, the frequency of the square waves may be driven as about 20 kHz to 150 kHz because the ITO target 202 has a high electrical resistance.

본 발명의 다른 실시예에 따르면, 쉴드들(208a 및 208b)의 종단에 요부가 형성될 수 있다. 결과적으로, 스퍼터된 ITO로 인한 막이 쉴드들(208a 및 208b)에 거의 형성되지 않거나 형성 속도가 최대한 지연되므로, ITO 전극(104)이 균일하게 형성될 수 있다. According to another embodiment of the present invention, recesses may be formed at the ends of the shields 208a and 208b. As a result, since the film due to sputtered ITO is hardly formed on the shields 208a and 208b or the formation speed is delayed as much as possible, the ITO electrode 104 can be formed uniformly.

본 발명의 ITO 타겟(202)은 인듐옥사이드(In2O3), 틴옥사이드(SnO2) 및 티타늄(Ti) 또는 아연(Zn)과 같은 첨가물을 포함한다. 즉, ITO 타겟(202)은 밀도를 향상시키기 위하여 종래의 성분(In2O3, SnO2)에 티타늄(Ti) 또는 아연(Zn)을 더 포함한다. The ITO target 202 of the present invention includes indium oxide (In 2 O 3 ), tin oxide (SnO 2 ) and additives such as titanium (Ti) or zinc (Zn). That is, the ITO target 202 further includes titanium (Ti) or zinc (Zn) in the conventional components (In 2 O 3 , SnO 2 ) to improve the density.

본 발명의 일 실시예에 따르면, 2wt%의 틴옥사이드(SnO2), 97.95~97.90wt%의 인듐옥사이드(In2O3) 및 0.05~0.1wt%의 티타늄(Ti) 또는 아연(Zn)을 포함한다. 종래의 ITO 타겟은 10wt%의 틴옥사이드(SnO2) 및 90wt%의 인듐옥사이드(In2O3)로 이루어졌으나, 본 발명의 ITO 타겟(202)은 인듐옥사이드(In2O3)의 비율이 90wt%에서 97wt% 이사으로 증가하였을 뿐만 아니라 티타늄(Ti) 또는 아연(Zn)을 추가적으로 포함한다. 이것은 ITO 타겟의 밀도를 99% 이상으로 향상시키기 위해서이다. 결과적으로, 터치 패널의 ITO 전극 제조용으로 사용되던 종래의 ITO 타겟에 비하여 깨짐, 아킹, 증착속도 감소, 흑화현상 등이 현저하게 감소하였고, 그 결과 터치 패널용 ITO 전극(104)의 제작이 용이하여질 수 있다. According to an embodiment of the present invention, 2 wt% tin oxide (SnO 2 ), 97.95 to 97.90 wt% indium oxide (In 2 O 3 ), and 0.05 to 0.1 wt% titanium (Ti) or zinc (Zn) Include. The conventional ITO target is composed of 10 wt% tin oxide (SnO 2 ) and 90 wt% indium oxide (In 2 O 3 ), but the ITO target 202 of the present invention has a ratio of indium oxide (In 2 O 3 ). Not only increased from 90 wt% to 97 wt% moving but also additionally contains titanium (Ti) or zinc (Zn). This is to improve the density of the ITO target to 99% or more. As a result, compared to the conventional ITO target used for manufacturing the ITO electrode of the touch panel, cracking, arcing, deposition rate reduction, blackening, etc. were significantly reduced. As a result, the ITO electrode 104 for the touch panel was easily manufactured. Can lose.

일반적으로, LCD 또는 PDP 등과 같은 디스플레이 소자의 투명 전극으로 사용되는 ITO는 낮은 비저항을 가지도록 10wt%의 틴옥사이드(SnO2) 및 90wt%의 인듐옥사이드(In2O3)로 이루어진다. LCD 또는 PDP는 에칭을 고려하여 180 ~ 300nm 정도로 두꺼운 막 구조를 가지는 투명 전극을 사용하며, 따라서 낮은 비저항을 가지도록 ITO 전극을 구현한다. In general, ITO, which is used as a transparent electrode of a display device such as an LCD or a PDP, is composed of 10 wt% tin oxide (SnO 2 ) and 90 wt% indium oxide (In 2 O 3 ) to have a low specific resistance. LCD or PDP uses a transparent electrode having a thick film structure of about 180 to 300 nm in consideration of etching, and thus implements an ITO electrode to have a low specific resistance.

그러나, 터치 패널의 코팅 유리에 사용되는 ITO 전극(104)은 LCD 또는 PDP에 비하여 상대적으로 높은 저항을 요구하며, 따라서 ITO 전극(104)을 10 ~ 20nm의 얇은 두께로 구현한다. However, the ITO electrode 104 used for the coated glass of the touch panel requires a relatively high resistance as compared to the LCD or PDP, thus implementing the ITO electrode 104 in a thin thickness of 10 to 20nm.

이렇게 얇은 막으로 ITO 전극(104)을 구현하면, ITO 전극(104)의 내구성이 저하될 수 있다. 따라서, 본 발명은 ITO 전극(104)의 내구성을 향상시킬 수 있는 ITO 타겟(202)겟을 제공한다. If the ITO electrode 104 is implemented with such a thin film, the durability of the ITO electrode 104 may be lowered. Accordingly, the present invention provides an ITO target 202 target capable of improving the durability of the ITO electrode 104.

내구성에 가장 큰 영향을 미치는 것은 ITO 결정성이며, ITO 결정성은 인듐옥사이드(In2O3)의 함량이 작을수록 우수하나, ITO 타겟의 소결이 어려워서 2%의 틴옥사이드(SnO2) 함량의 타겟을 제조하는 경우 이론대비 97% 이상의 밀도 타겟을 제작하기 어렵다. The most influential effect on the durability is ITO crystallinity, and ITO crystallinity is excellent as the content of indium oxide (In 2 O 3 ) is small, but the target of 2% tin oxide (SnO 2 ) content is difficult to sinter the ITO target. It is difficult to manufacture a density target of more than 97% of theory when manufacturing.

따라서, 본 발명은 밀도 향상을 위하여 0.05~0.1wt%의 티타늄(Ti) 또는 아연(Zn)을 첨가시킨다. 그 결과, 99% 이상의 상대 밀도를 가진 ITO 타겟(202)을 제조할 수 있으며, 따라서 터치 패널의 코팅 유리에 적합한 ITO 전극(104)을 용이하게 제작할 수 있다. Therefore, the present invention adds 0.05 to 0.1 wt% of titanium (Ti) or zinc (Zn) to improve density. As a result, an ITO target 202 having a relative density of 99% or more can be manufactured, and thus an ITO electrode 104 suitable for coating glass of a touch panel can be easily manufactured.

상기한 본 발명의 실시예는 예시의 목적을 위해 개시된 것이고, 본 발명에 대한 통상의 지식을 가지는 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가가 가능할 것이며, 이러한 수정, 변경 및 부가는 하기의 특허청구범위에 속하는 것으로 보아야 할 것이다. The embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art having ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention. Should be considered to be within the scope of the following claims.

100 : 투명 기판 104 : SiO2층
106 : ITO 전극 200 : 챔버
202 : ITO 타겟 204 : 배면판
208 : 쉴드 210 : 전원부
220 : 직류 전원 224 : 분배 제어부 100: transparent substrate 104: SiO 2 layer
106: ITO electrode 200: chamber
202: ITO target 204: back plate
208: shield 210: power unit
220: DC power supply 224: distribution control unit

Claims (4)

터치 패널의 코팅 유리에 사용되는 ITO 전극을 제조하기 위한 ITO 타겟에 있어서,
틴옥사이드(SnO2);
인듐옥사이드(In2O3); 및
티타늄(Ti) 및 아연(Zn) 중 적어도 하나의 첨가물을 포함하되,
상기 첨가물은 0.05~0.1wt%의 중량비를 가지며, 인듐옥사이드(In2O3)는 97.95~97.90wt%의 중량비를 가지는 것을 특징으로 하는 터치 패널의 코팅 유리용 ITO 타겟. In the ITO target for manufacturing the ITO electrode used for the coated glass of the touch panel,
Tin oxide (SnO 2 );
Indium oxide (In 2 O 3 ); And
At least one additive of titanium (Ti) and zinc (Zn),
The additive has a weight ratio of 0.05 ~ 0.1wt%, Indium oxide (In 2 O 3 ) ITO target for the coated glass of the touch panel, characterized in that having a weight ratio of 97.95 ~ 97.90wt%. 제1항에 있어서, 상기 틴옥사이드(SnO2)는 2wt%의 중량비를 가지는 것을 특징으로 하는 터치 패널의 코팅 유리용 ITO 타겟. According to claim 1, wherein the tin oxide (SnO 2 ) ITO target for the coated glass of the touch panel, characterized in that having a weight ratio of 2wt%. 제2항에 있어서, 상기 ITO 전극은 10~20nm의 두께를 가지며, 기판 위에 Si02층 및 상기 ITO 전극이 순차적으로 형성되어 상기 코팅 유리를 형성하는 것을 특징으로 하는 터치 패널의 코팅 유리용 ITO 타겟. The ITO target of claim 2, wherein the ITO electrode has a thickness of 10 to 20 nm, and a Si0 2 layer and the ITO electrode are sequentially formed on a substrate to form the coating glass. . 삭제delete
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KR20020009502A (en) * 2000-07-25 2002-02-01 이즈하라 요조 Method of manufacturing substrate having transparent conductive film, substrate having transparent conductive film manufactured using the method, and touch panel using the substrate
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