CN101786800A - Method for improving production efficiency of low-emissivity coated glass - Google Patents
Method for improving production efficiency of low-emissivity coated glass Download PDFInfo
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- CN101786800A CN101786800A CN 201010107683 CN201010107683A CN101786800A CN 101786800 A CN101786800 A CN 101786800A CN 201010107683 CN201010107683 CN 201010107683 CN 201010107683 A CN201010107683 A CN 201010107683A CN 101786800 A CN101786800 A CN 101786800A
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- argon gas
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Abstract
The invention discloses a method for improving production efficiency of low-emissivity coated glass, which comprises the following steps that: when producing the low-emissivity coated glass, nitrogen gas and argon gas are respectively charged into a coating chamber, so the flow rate of total gas is 0.5 to 2 L/minute, wherein the nitrogen gas accounts for 40 to 90 percent, the argon gas accounts for 10 to 60 percent, a silicon target is electrified to start sputtering, and glass passes through below the silicon target, so silicon nitride is deposited on the surface of the glass to form a silicon nitride film. The silicon nitride film with the same thickness is deposited, under the condition that the hardware of the low-emissivity coated glass production line is not changed, and on the premise that other parameters for sputtering and depositing the film are not changed, by adopting the method, the sputtering power of the silicon target can be reduced by 1.2 times, so the electric power can be saved; and on the premise that other parameters for sputtering and depositing the film are not changed, and by adopting the method, half of the silicon target devices and supporting sputtering power sources can be reduced, so the equipment investment can be saved.
Description
Technical field
The invention belongs to the low radiation coated glass production technical field, mainly propose a kind of method that improves production efficiency of low-emissivity coated glass.
Background technology
The low radiation coated glass manufacturing technique requirent is at the silicon nitride film layer of glass surface plating one deck 10-40nm, because the silicon composition about 70% is arranged in the glass, can improve the bonding force of rete and glass surface, simultaneously because the silicon nitride structure densification, can effectively stop the sodium ion migration in the glass, the silver layer in the corrosion rete; The low radiation coated glass production technique also requires low-radiation film outermost one deck to use silicon nitride film layer, the about 20-60mm of thickness, because silicon nitride film layer densification, hard, can stop airborne oxygen, steam, hydrogen sulfide to the corrosion of the silver layer in the rete, and have stronger damage resistant, friction, capability.
The technological principle of plated film sputter: in charging into the vacuum chamber of a small amount of process gas, when voltage across poles is very little, have only a small amount of ion and electronics to exist, current density is 10
-15A/cm
2Numbers of poles, when voltage between indoor negative electrode of vacuum (target) and anode increases, charged particle accelerated motion under effect of electric field, energy increases, and collides with electrode or neutral gas atom, produces more charged particle, reaches 10 until electric current
-6A/cm
2Numbers of poles when voltage increases again, then can produce negative resistance effect, i.e. " snowslide " phenomenon.Ion bombardment this moment negative electrode hits cathode atoms and secondary electron, and secondary electron and neutral atom collision produce more polyion, and this ion is bombarding cathode again, produces secondary electron again, so repeatedly.When current density reaches 10
-2A/cm
2During the order of magnitude, electric current will increase with the increase of voltage, forms the anomalous glow discharge of high density plasma, and high-octane ion bombardment negative electrode (target) produces sputtering phenomenon.The high-energy target particle that sputters out deposits on the anode (chunk glass), thereby reaches the purpose of plated film.
In the low radiation coated glass production process, when the sputtering sedimentation silicon nitride film layer, charge into the nitrogen of 0.5-2 liter/minute flow at coating chamber, silicon target send electricity, the beginning sputter, and glass passes through with certain speed under silicon target, silicon nitride just is deposited on glass surface, forms silicon nitride film layer.
Summary of the invention
Purpose of the present invention promptly is to propose a kind of method that improves production efficiency of low-emissivity coated glass, use this method under the constant condition of low radiation coated glass production line hardware, under the prerequisite of other rete parameter constant of sputtering sedimentation, can reduce the sputtering power about 50% of silicon target, saves energy; Under the prerequisite of all rete parameter constants of sputtering sedimentation, can reduce silicon target device about 50% and supporting shielding power supply, save facility investment.
A kind of method that improves production efficiency of low-emissivity coated glass that the present invention proposes is, when low radiation coated glass is produced, charge into nitrogen and argon gas respectively at coating chamber, make total gas couette be the 0.5-2 liter/minute, wherein nitrogen accounts for the 40%-90% of total amount, argon gas accounts for the 10%-60% of total amount, silicon target send electricity, the beginning sputter, and glass passes through under silicon target, silicon nitride just is deposited on glass surface, forms silicon nitride film layer.
Described coating chamber can charge into nitrogen and argon gas respectively, total gas couette be the 0.8-1.8 liter/minute, wherein nitrogen accounts for the 50%-80% of total amount, argon gas accounts for the 20%-50% of total amount.
Described coating chamber can charge into nitrogen and argon gas respectively, total gas couette be the 1.0-1.6 liter/minute, wherein nitrogen accounts for the 60%-80% of total amount, argon gas accounts for the 20%-40% of total amount.
The present invention proposes when the sputtering sedimentation silicon nitride film layer, to charge into a certain proportion of nitrogen and argon gas at coating chamber when producing low radiation coated glass, improves the silicon nitride sputtering yield, thereby improves the method for coated glass production efficiency.Silicon target is when the coating chamber sputter that charges into nitrogen, electronics in the coating chamber is under effect of electric field, high-speed motion, bump nitrogen is ionized into positively charged nitrogen ion and electronics with it, positively charged nitrogen particle is under effect of electric field, bump sputters out Siliciumatom as the silicon target of negative potential, forms silicon nitride, and be deposited on glass below the target, form silicon nitride film layer.In coating chamber, charge into a certain proportion of nitrogen and argon gas, can effectively improve the sputtering yield of silicon nitride.The nitrogen-atoms quality is 14, the ar atmo quality is 40, and the ar atmo quality is 2.86 times of nitrogen-atoms quality, so argon ion is when the bump silicon target, has higher energy than nitrogen ion, can sputter more Siliciumatom, argon gas is a rare gas element, does not combine with Siliciumatom, Siliciumatom only combines with nitrogen-atoms, form silicon nitride, be deposited on glass surface, form silicon nitride film layer.The purity of argon that the present invention uses is higher than 99.99%, the flow control of argon gas is at the 10%-60% of nitrogen and argon gas total flux, if the argon gas ratio is low, then the silicon nitride sputtering yield improves seldom, along with the raising of argon gas ratio, the silicon nitride sputtering yield also can improve.If but the argon gas ratio is too high, then nitrogen will be less, though the Siliciumatom that can sputter out is a lot, do not have enough nitrogen-atoms to combine with it, forms silicon nitride, understands some pure silicon and deposit to glass surface, influences the silicon nitride film layer quality.
Adopt method of the present invention, about the 50nm*mm*mm/s.w in the time of can making the sputtering yield of silicon nitride charge into pure nitrogen gas by coating chamber, rise to about the 110nm*mm*mm/s*w when adding argon gas, sputtering yield has increased about 1.2 times.The silicon nitride film layer of deposition same thickness under the constant condition of low radiation coated glass production line hardware, under the prerequisite of other rete parameter constant of sputtering sedimentation, adopts the present invention can reduce the sputtering power about 55% of silicon target, saves energy; Under the prerequisite of all rete parameter constants of sputtering sedimentation, adopt the present invention can reduce silicon target device of half and supporting shielding power supply, save facility investment.
Embodiment
Embodiment 1:
When the production model is the JEC3140 low radiation coated glass, in deposition on glass 5 tunics, the first layer and last one deck are silicon nitride film layer, the first layer silicon nitride film layer thickness is 17nm, last one deck silicon nitride film layer thickness is 31nm, glass is 300 cm per minute in the transmission speed of coating chamber, the nitrogen flow that four coating chambers of placement silicon target charge into is 1.1 liters/minute, two silicon target power supply sputtering powers that deposit first tunic are 31KW, and two silicon target power supply sputtering powers that deposit last tunic are 60KW.If charging into flow at the coating chamber of placing silicon target is 0.52 liter/minute nitrogen and 0.58 liter/minute argon gas, then glass is 660 cm per minute in the transmission speed of coating chamber, the silicon nitride film layer thickness that is deposited on glass surface the first layer and last one deck still is 17nm and 31nm, during other 3 tunic of sputtering sedimentation, sputtering power also improves 1.2 times, has so just improved 1.2 times of production efficiencys.Can certainly the condition of other 3 tunic of deposition is constant, preceding two silicon target sputtering powers are all reduced to 14kw, latter two silicon target sputtering power is all reduced to 27kw, perhaps front and back are respectively with a silicon target 28kw and 54kw sputter, and saves energy consumes 55%.
Embodiment 2:
When the production model is the JEC7160 low radiation coated glass, in deposition on glass seven tunics, the first layer and last one deck are silicon nitride film layer, thickness is 31nm, glass is 300 cm per minute in the transmission speed of coating chamber, place the nitrogen flow that four coating chambers of silicon target charge into and be 1.2 liters/minute, deposit two silicon targets of first tunic and two silicon targets of last tunic of deposition, the power supply sputtering power is 65KW.If charging into flow at the coating chamber of placing silicon target is 0.7 liter/minute nitrogen and 0.5 liter/minute argon gas, then glass is 630 cm per minute in the transmission speed of coating chamber, the silicon nitride film layer thickness that is deposited on glass surface the first layer and last one deck still is 31nm, during other four tunic of sputtering sedimentation, sputtering power improves 1.15 times, has so just improved 1.1 times of production efficiencys.Can certainly the condition of other four tunic of deposition is constant, four silicon target sputtering powers are all reduced to 31kw, perhaps respectively with silicon target 62kw sputter, saves energy consumes 52%.
Embodiment 3:
When the production model is the JEC1160 low radiation coated glass, in deposition on glass six tunics, the first layer and last one deck are silicon nitride film layer, thickness is 27nm, glass is 300 cm per minute in the transmission speed of coating chamber, place the nitrogen flow that four coating chambers of silicon target charge into and be 1.4 liters/minute, deposit two silicon targets of first tunic and two silicon targets of last tunic of deposition, the power supply sputtering power is 56KW.If charging into flow at the coating chamber of placing silicon target is 0.7 liter/minute nitrogen and 0.7 liter/minute argon gas, then glass is 660 cm per minute in the transmission speed of coating chamber, the silicon nitride film layer thickness that is deposited on glass surface the first layer and last one deck still is 27nm, during other four tunic of sputtering sedimentation, sputtering power also improves 1.2 times, has so just improved 1.2 times of production efficiencys.Can certainly the condition of other four tunic of deposition is constant, four silicon target sputtering powers are all reduced to 25.5kw, perhaps respectively with silicon target 51kw sputter, saves energy consumes 55%.
The nitrogen that relates in this method, argon gas, comprise that oxygen all is that the low radiation coated glass production technique is needed, gas function unit, transport pipe also all are to be equipped with in the equipment, the user can be according to the variant production arts demand, adorn different targets at different coating chambers, select different types of process gas (nitrogen, argon gas or oxygen) for use, at the rete of glass surface, produce the product of different varieties by processing requirement deposition different sorts, different order, different thickness.
Claims (3)
1. method that improves production efficiency of low-emissivity coated glass, it is characterized in that: when low radiation coated glass is produced, charge into nitrogen and argon gas respectively at coating chamber, make total gas couette be the 0.5-2 liter/minute, wherein nitrogen accounts for the 40%-90% of total amount, argon gas accounts for the 10%-60% of total amount, silicon target send electricity, the beginning sputter, and glass passes through under silicon target, silicon nitride just is deposited on glass surface, forms silicon nitride film layer.
2. a kind of method that improves production efficiency of low-emissivity coated glass according to claim 1, it is characterized in that: described coating chamber charges into nitrogen and argon gas respectively, total gas couette be the 0.8-1.8 liter/minute, wherein nitrogen accounts for the 50%-80% of total amount, argon gas accounts for the 20%-50% of total amount.
3. a kind of method that improves production efficiency of low-emissivity coated glass according to claim 1, it is characterized in that: described coating chamber charges into nitrogen and argon gas respectively, total gas couette be the 1.0-1.6 liter/minute, wherein nitrogen accounts for the 60%-80% of total amount, argon gas accounts for the 20%-40% of total amount.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010107683 CN101786800A (en) | 2010-02-10 | 2010-02-10 | Method for improving production efficiency of low-emissivity coated glass |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010107683 CN101786800A (en) | 2010-02-10 | 2010-02-10 | Method for improving production efficiency of low-emissivity coated glass |
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| CN101786800A true CN101786800A (en) | 2010-07-28 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374704A (en) * | 2012-04-26 | 2013-10-30 | 北京物华天宝镀膜科技有限公司 | Method for manufacturing remote tempered double-silver low-radiation coated glass |
| CN109371364A (en) * | 2018-12-03 | 2019-02-22 | 蓝思科技（长沙）有限公司 | A kind of evaporation process that glass is non-discolouring |
| CN109553308A (en) * | 2018-12-29 | 2019-04-02 | 河南中汇新材科技有限公司 | Self-cleaning glass and its manufacturing method |
| CN115074682A (en) * | 2022-06-30 | 2022-09-20 | 芜湖长信科技股份有限公司 | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen |
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| CN1363530A (en) * | 2001-01-09 | 2002-08-14 | 上海耀华皮尔金顿玻璃股份有限公司 | Absorption-type low-radiation film coated glass |
| CN101066845A (en) * | 2007-06-06 | 2007-11-07 | 深圳市南玻伟光镀膜玻璃有限公司 | Low radiation glass capable of being post-treated and its production process |
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2010
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5240581A (en) * | 1991-03-05 | 1993-08-31 | Skc Limited | Method of producing a magneto-optical disk |
| CN1153749A (en) * | 1995-11-02 | 1997-07-09 | 加迪安工业公司 | Neutral, high performance, durable low-E glass coating system, insulating glass units made therefrom, and methods of making same |
| CN1363530A (en) * | 2001-01-09 | 2002-08-14 | 上海耀华皮尔金顿玻璃股份有限公司 | Absorption-type low-radiation film coated glass |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374704A (en) * | 2012-04-26 | 2013-10-30 | 北京物华天宝镀膜科技有限公司 | Method for manufacturing remote tempered double-silver low-radiation coated glass |
| CN103374704B (en) * | 2012-04-26 | 2016-11-02 | 北京物华天宝镀膜科技有限公司 | The method manufacturing Double-silver low-emissivity coated glass capable of being off-site toughened |
| CN109371364A (en) * | 2018-12-03 | 2019-02-22 | 蓝思科技（长沙）有限公司 | A kind of evaporation process that glass is non-discolouring |
| CN109371364B (en) * | 2018-12-03 | 2021-07-23 | 蓝思科技（长沙）有限公司 | Evaporation process for glass without color change |
| CN109553308A (en) * | 2018-12-29 | 2019-04-02 | 河南中汇新材科技有限公司 | Self-cleaning glass and its manufacturing method |
| CN115074682A (en) * | 2022-06-30 | 2022-09-20 | 芜湖长信科技股份有限公司 | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen |
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Open date: 20100728 |