CN115074682A - Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen - Google Patents
Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen Download PDFInfo
- Publication number
- CN115074682A CN115074682A CN202210768113.0A CN202210768113A CN115074682A CN 115074682 A CN115074682 A CN 115074682A CN 202210768113 A CN202210768113 A CN 202210768113A CN 115074682 A CN115074682 A CN 115074682A
- Authority
- CN
- China
- Prior art keywords
- oxygen
- film
- coating chamber
- coating
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
Abstract
The invention discloses a process for improving the film coating efficiency of high-film-thickness silicon dioxide of a touch screen, which comprises the steps of respectively arranging a first pair of SI targets, a second pair of SI targets and a third pair of SI targets in a first film coating chamber, a second film coating chamber and a third film coating chamber of vacuum film coating equipment, setting the flow of oxygen introduced into the first film coating chamber and the second film coating chamber to be a constant value, and controlling the oxygen to enter the first film coating chamber and the second film coating chamber by a film forming machine program; the third coating chamber is controlled by the gas reaction controller to control the flow of oxygen entering the third coating chamber, and the value voltage of the gas reaction controller is set to be a constant value. The process for improving the film coating efficiency of the high-film-thickness silicon dioxide of the touch screen can improve the production efficiency, reduce the damage rate and stabilize the voltage and the film quality.
Description
Technical Field
The invention belongs to the technical field of touch screen production processes, and particularly provides a process for improving the film coating efficiency of high-film-thickness silicon dioxide of a touch screen.
Background
As a latest computer input device, the touch screen is a simple, convenient and natural man-machine interaction mode. The capacitive screen is the most active capacitive screen, works by utilizing current induction of a human body, a layer of transparent special metal conductive substance is pasted on the surface of glass, and when a conductive object touches the transparent special metal conductive substance, the capacitance of a contact point can be changed, so that the touched position can be detected.
The ogs (one glass solution) product in the capacitive screen is hot due to its low cost, but the yield is always low, and the main defect is electrostatic damage. Through design optimization, an OC insulating layer is arranged below an ITO film layer of the touch screen or an SIO layer is plated on the ITO film layer 2 The (silicon dioxide plating) film layer and the OC insulating layer are positioned on the BM layer, so that the abnormal yield improvement can be solved. But to SIO 2 High film thickness requirement of the film layer, SIO 2 The film thickness of the film layer is required to reach 800 +/-100A. Meanwhile, the coating speed needs to be reduced to 0.6m/min during production. The existing equipment has insufficient capacity, and BM and OC materials can escape out of impurity gas to cause unstable voltage, so that the coating transmission speed is low, the sputtering power is high, the damage rate is high, the production efficiency is low, and the production cost is high.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a process for improving the film coating efficiency of high-film-thickness silicon dioxide of a touch screen, and aims to improve the production efficiency.
In order to achieve the purpose, the invention adopts the technical scheme that: the process for improving the film coating efficiency of the high-film-thickness silicon dioxide of the touch screen comprises the steps of respectively arranging a first pair of SI targets, a second pair of SI targets and a third pair of SI targets in a first film coating chamber, a second film coating chamber and a third film coating chamber of vacuum film coating equipment, setting the flow of oxygen introduced into the first film coating chamber and the second film coating chamber to be a constant value, controlling the flow of the oxygen entering the third film coating chamber by a gas reaction controller, and setting the voltage of the gas reaction controller to be the constant value.
The first coating chamber, the second coating chamber and the third coating chamber are sequentially arranged.
A first target box body is arranged in the first coating chamber, the first pair of SI targets are arranged in the first target box body, a second target box body is arranged in the second coating chamber, and the second pair of SI targets are arranged in the second target box body; a third target box body is arranged in the third coating chamber, and the third pair of SI targets is arranged in the third target box body; the third coating chamber is provided with a gas reaction controller, and the gas reaction controller is arranged on the top outside the third coating chamber.
Oxygen is introduced into the first film coating chamber, the second film coating chamber and the third film coating chamber through a plurality of oxygen pipelines, and a flow meter is arranged to monitor the oxygen flow of the oxygen pipelines.
The three oxygen pipelines are respectively a first oxygen pipeline, a second oxygen pipeline and a third oxygen pipeline, the first flowmeter is arranged to monitor the oxygen flow of the first oxygen pipeline, the second flowmeter is arranged to monitor the oxygen flow of the second oxygen pipeline, and the third flowmeter is arranged to monitor the oxygen flow of the third oxygen pipeline.
And introducing nitrogen into the first coating chamber by arranging a plurality of nitrogen pipelines, and monitoring the nitrogen flow of the nitrogen pipelines by arranging a flowmeter.
The nitrogen pipeline sets up threely, and three nitrogen pipeline is first nitrogen pipeline, second nitrogen pipeline and third nitrogen pipeline respectively, sets up the nitrogen flow of fourth flowmeter monitoring first nitrogen pipeline, sets up the nitrogen flow of fifth flowmeter monitoring nitrogen pipeline, sets up the nitrogen flow of sixth flowmeter monitoring third nitrogen pipeline.
The flow of oxygen introduced into the first coating chamber is larger than that introduced into the second coating chamber, and the flow of oxygen introduced into the second coating chamber is larger than that introduced into the third coating chamber.
The flow of Ar gas introduced into the first film plating chamber is the same as the flow of Ar gas introduced into the second film plating chamber and the third film plating chamber.
The set power of the power supply of the first pair of SI targets is the same as that of the second pair of SI targets and is greater than that of the third pair of SI targets.
The process for improving the film coating efficiency of the high-film-thickness silicon dioxide of the touch screen can improve the production efficiency, reduce the damage rate and stabilize the voltage and the film quality.
Drawings
The description includes the following figures, the contents shown are respectively:
FIG. 1 is a schematic layout of a coating chamber;
FIG. 2 is a schematic view of the arrangement at a first pair of SI targets;
FIG. 3 is a schematic view of the arrangement at a second pair of SI targets;
FIG. 4 is a schematic view of the arrangement at a third pair of SI targets;
labeled as:
1. a first pair of SI targets; 2. a second pair of SI targets; 3. a third pair of SI targets; 4. an inlet chamber; 5. a first buffer chamber; 6. a first transition chamber; 7. a first coating chamber; 8. a second coating chamber; 9. a third coating chamber; 10. a second transition chamber; 11. a second buffer chamber; 12. an outlet chamber; 13. a gas reaction controller; 14. a first target material box body; 15. a first oxygen conduit; 16. a second oxygen conduit; 17. a third oxygen conduit; 18. a first nitrogen gas conduit; 19. a second nitrogen gas conduit; 20. a third nitrogen gas line; 21. a first flow meter; 22. a second flow meter; 23. a third flow meter; 24. a fourth flow meter; 25. a fifth flow meter; 26. a sixth flow meter; 27. a second target material box body; 28. a fourth oxygen conduit; 29. a fourth nitrogen gas line; 30. a fifth oxygen conduit; 31. a fifth nitrogen gas line; 32. and a third target material box body.
Detailed Description
The following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings for a purpose of helping those skilled in the art to more fully, accurately and deeply understand the concept and technical solution of the present invention and to facilitate its implementation.
It should be noted that, in the following embodiments, the terms "first", "second" and "third" do not denote absolute differences in structure and/or function, nor do they denote a sequential order of execution, but rather are used for convenience of description.
As shown in figure 1, the invention provides a process for improving the coating efficiency of high-film-thickness silicon dioxide of a touch screen, a first pair of SI targets 1, a second pair of SI targets 2 and a third pair of SI targets 3 are respectively arranged in a first coating chamber 7, a second coating chamber 8 and a third coating chamber 9 of a vacuum coating device, the flow of oxygen introduced into the first coating chamber 7 and the second coating chamber 8 is set to be a constant value, the flow of oxygen entering the third coating chamber 9 is controlled by a gas reaction controller 13, and the voltage of the gas reaction controller 13 is set to be the constant value.
Specifically, the touch screen comprises a glass substrate, a BM layer arranged on the glass layer, an OC layer arranged on the BM layer, an IM film layer arranged on the OC layer, an ITO film layer arranged on the IM film layer, a Metal film layer arranged on the ITO film layer, an SIO2 film layer arranged on the Metal film layer and a Passivation layer arranged on the SIO2 film layer. In order to improve the voltage instability caused by the escape of the impure gas of the BM & OC material, improve the film coating speed and further improve the production efficiency, the invention modifies the film coating cavity and adjusts the film coating process parameters.
As shown in fig. 1 to 4, an inlet chamber 4, a first buffer chamber 5, a first transition chamber 6, a first coating chamber 7, a second coating chamber 8, a third coating chamber 9, a second transition chamber 10, a second buffer chamber 11 and an outlet chamber 12 are sequentially arranged in a coating cavity of the vacuum coating equipment, and the first coating chamber 7, the second coating chamber 8 and the third coating chamber 9 are sequentially arranged. A first target box body 14 is arranged in the first film coating chamber 7, a first pair of SI targets 1 are arranged in the first target box body 14, the first pair of SI targets 1 comprise two SI targets, and an oxygen pipeline and a nitrogen pipeline outside the first target box body 14 are exchanged. A second target box body 27 is arranged in the second film coating chamber 8, a second pair of SI targets 2 is arranged in the second target box body 27, and the second pair of SI targets 2 comprises two SI targets. A third target box 32 is arranged in the third film plating chamber 9, a third pair of SI targets 3 is arranged in the third target box 32, and the third pair of SI targets 3 comprises two SI targets.
Oxygen is introduced into the first coating chamber 7 through a plurality of oxygen pipelines, and a flow meter is arranged to monitor the oxygen flow of the oxygen pipelines. In the present embodiment, as shown in fig. 2, three oxygen pipes are provided, the three oxygen pipes are a first oxygen pipe 15, a second oxygen pipe 16 and a third oxygen pipe 17, the first oxygen pipe 15, the second oxygen pipe 16 and the third oxygen pipe 17 respectively deliver oxygen into the first target chamber 14, a first flow meter is provided to monitor the oxygen flow rate of the first oxygen pipe 15, a second flow meter is provided to monitor the oxygen flow rate of the second oxygen pipe 16, and a third flow meter is provided to monitor the oxygen flow rate of the third oxygen pipe 17. Three nitrogen gas pipelines are also arranged, namely a first nitrogen gas pipeline 18, a second nitrogen gas pipeline 19 and a third nitrogen gas pipeline 20.
Preferably, as shown in fig. 2, the first flow meter is connected with the first oxygen pipeline 15, the second flow meter is connected with the second oxygen pipeline 16, the third flow meter is connected with the third oxygen pipeline 17, the fourth flow meter is connected with the first nitrogen pipeline 18, the fifth flow meter is connected with the second nitrogen pipeline 19, the sixth flow meter is connected with the third nitrogen pipeline 20, the range of the first flow meter is the same as that of the second flow meter and the third flow meter, the range of the fourth flow meter is the same as that of the fifth flow meter and the sixth flow meter, and the ranges of the first flow meter, the second flow meter and the third flow meter are larger than those of the fourth flow meter, the fifth flow meter and the sixth flow meter, so that the requirements of process equipment can be met. The first flowmeter, the second flowmeter, the third flowmeter, the fourth flowmeter, the fifth flowmeter and the sixth flowmeter are electrically connected with the film forming machine, and the first flowmeter, the second flowmeter, the third flowmeter, the fourth flowmeter, the fifth flowmeter and the sixth flowmeter are controlled by the film forming machine.
As shown in fig. 1 and 3, a plurality of fourth oxygen pipes 28 are provided to introduce oxygen into the second coating chamber 8. Seventh flow meters are provided for monitoring the oxygen flow of the fourth oxygen ducts 28, the number of the seventh flow meters being the same as the number of the fourth oxygen channels, each seventh flow meter being adapted to monitor the oxygen flow of one fourth oxygen duct 28.
In the present embodiment, as shown in fig. 3, three fourth oxygen conduits 28 are provided, and three seventh flow meters are provided; the seventh flowmeter is electrically connected with the film forming machine and is controlled by the film forming machine.
As shown in fig. 1 and 4, a plurality of fifth oxygen pipelines 30 are arranged to introduce oxygen into the third coating chamber 9, ninth flow meters are arranged to monitor the oxygen flow rate of the fifth oxygen pipelines 30, the number of the ninth flow meters is the same as that of the fifth oxygen channels, and each ninth flow meter is used for monitoring the oxygen flow rate of one fifth oxygen pipeline 30. The gas reaction controller 13 is connected with all fifth oxygen pipelines 30 which introduce oxygen into the third film plating chamber 9, the oxygen amount introduced into the third film plating chamber 9 is controlled by the gas reaction controller 13, and the voltage of the gas reaction controller 13 is set to be a constant value, so that the oxygen amount introduced into the third film plating chamber 9 fluctuates only in a small range.
In the present embodiment, as shown in fig. 4, three fifth oxygen conduits 30 are provided, and three ninth flow meters are provided; the ninth flowmeter is electrically connected with the gas reaction controller and is controlled by the gas reactor.
Therefore, by configuring the target positions as three pairs of SI targets, ventilating the first pair of SI targets 1 and the second pair of SI targets 2 in a constant flow mode, and controlling the third pair of SI targets 3 in a constant voltage mode by the gas reaction controller 13, a high film thickness SIO with a film thickness of 800 + -100A can be satisfied 2 The film coating speed can reach 1.25m/min production, the production efficiency is improved by 50%, the damage rate is reduced, and the voltage and the film quality are stable. The third pair of SI targets is controlled in a constant voltage mode, in which the gas reaction controller can automatically adjust O 2 Controlling SIO by input 2 The voltage makes it stable at a higher constant value, the sputtering state of the Si target is a transition state, the sputtering rate is high, and the constant flow mode is the same as that of the constant flow modeSIO in constant voltage mode at power 2 The thicker the film thickness. The coating speed is high, the sputtering power is reduced, the target temperature is low, the glass is less cracked, the damage rate is low, the voltage is stable, and the quality of the film is stable under the same film thickness requirement.
Preferably, the flow rates of the oxygen introduced into the first coating chamber 7, the second coating chamber 8 and the third coating chamber 9 are fixed values, the flow rate of the oxygen introduced into the first coating chamber 7 is greater than that of the oxygen introduced into the second coating chamber 8, and the flow rate of the oxygen introduced into the second coating chamber 8 is greater than that of the oxygen introduced into the third coating chamber 9. The difference in oxygen flow rate ensures the SI target voltage stability in the third coating chamber 9. Meanwhile, the gas introduction amount is reduced, and the use cost of the process gas is saved.
Preferably, the flow rate of the Ar gas introduced into the first coating chamber 7 is the same as the flow rate of the Ar gas introduced into the second coating chamber 8 and the third coating chamber 9.
Preferably, the set power of the power supply of the first pair of SI targets 1 and the set power of the power supply of the second pair of SI targets 2 are greater than the set power of the power supply of the third pair of SI targets 3, the set power of the power supply of the first pair of SI targets 1 and the set power of the power supply of the second pair of SI targets 2 are a constant value, and the set power of the power supply of the third pair of SI targets 3 is a range value. Specific constant flow rate mode SIO under constant voltage mode and same power 2 The film thickness is high and can reach about 1300A. The power needs to be reduced to reach the target film thickness 800A. Since the voltage becomes unstable as the power becomes higher, the amount of oxygen required becomes larger, and the sputtering power of the SI target is reduced by adjusting the amount of oxygen in synchronization with the setting of the amount of oxygen, whereby the voltage can be stabilized. The sputtering power of the SI target is reduced, and the use cost of the target is saved.
As shown in fig. 1 to 4, the first coating chamber 7, the second coating chamber 8 and the third coating chamber 9 are on the same straight line, and in the traveling direction of the glass substrate (indicated by arrows in fig. 1), a third oxygen pipe 17, a second oxygen pipe 16, a first oxygen pipe 15, a first nitrogen pipe 18, a second nitrogen pipe 19, a third nitrogen pipe 20, three fourth nitrogen pipes 29, three fourth oxygen pipes 28, three fifth nitrogen pipes 31 and three fifth oxygen pipes 30 are arranged in sequence, and the glass substrate passes through the third oxygen pipe 17, the second oxygen pipe 16, the first oxygen pipe 15, the first nitrogen pipe 18, the second nitrogen pipe 19, the third nitrogen pipe 20, three fourth nitrogen pipes 29, three fourth oxygen pipes 28, three fifth nitrogen pipes 31 and three fifth oxygen pipes 30 in sequence.
The invention is described above by way of example with reference to the accompanying drawings. It is to be understood that the specific implementations of the invention are not limited in this respect. Various insubstantial improvements are made by adopting the method conception and the technical scheme of the invention; the present invention is not limited to the above embodiments, and can be modified in various ways.
Claims (10)
1. The process for improving the film coating efficiency of the high-film-thickness silicon dioxide of the touch screen is characterized in that a first pair of SI targets, a second pair of SI targets and a third pair of SI targets are respectively arranged in a first film coating chamber, a second film coating chamber and a third film coating chamber of vacuum film coating equipment, the flow of oxygen introduced into the first film coating chamber and the second film coating chamber is set to be a constant value, the flow of the oxygen entering the third film coating chamber is controlled by a gas reaction controller, and the voltage of the gas reaction controller is set to be the constant value.
2. The process for improving the efficiency of coating the high-film-thickness silicon dioxide on the touch screen according to claim 1, wherein the first coating chamber, the second coating chamber and the third coating chamber are arranged in sequence.
3. The process for improving the coating efficiency of the high-film-thickness silicon dioxide of the touch screen as claimed in claim 1, wherein a first target box is arranged in the first coating chamber, and the first pair of SI targets is arranged in the first target box; a second target box body is arranged in the second coating chamber, and the second pair of SI targets is arranged in the second target box body; a third target box body is arranged in the third coating chamber, and the third pair of SI targets are arranged in the third target box body; the third coating chamber is provided with a gas reaction controller, and the gas reaction controller is arranged on the top outside the third coating chamber.
4. The process for improving the efficiency of coating the touch screen with the high-film-thickness silica as claimed in claim 3, wherein a plurality of oxygen pipelines are arranged to introduce oxygen into the first coating chamber, the second coating chamber and the third coating chamber, and a flow meter is arranged to monitor the oxygen flow of the oxygen pipelines.
5. The process for improving the efficiency of coating a high-film-thickness silica film on a touch screen according to claim 4, wherein the number of the oxygen pipelines is three, the three oxygen pipelines are respectively a first oxygen pipeline, a second oxygen pipeline and a third oxygen pipeline, the first flow meter is arranged for monitoring the oxygen flow of the first oxygen pipeline, the second flow meter is arranged for monitoring the oxygen flow of the second oxygen pipeline, and the third flow meter is arranged for monitoring the oxygen flow of the third oxygen pipeline.
6. The process for improving the efficiency of coating the high-film-thickness silicon dioxide on the touch screen as claimed in claim 3, wherein a plurality of nitrogen pipelines are arranged to introduce nitrogen into the first coating chamber, and a flow meter is arranged to monitor the flow rate of nitrogen in the nitrogen pipelines.
7. The process for improving the efficiency of coating the silicon dioxide film with the high film thickness on the touch screen according to claim 6, wherein the number of the nitrogen pipelines is three, the three nitrogen pipelines are respectively a first nitrogen pipeline, a second nitrogen pipeline and a third nitrogen pipeline, a fourth flowmeter is arranged for monitoring the nitrogen flow rate of the first nitrogen pipeline, a fifth flowmeter is arranged for monitoring the nitrogen flow rate of the third nitrogen pipeline, and a sixth flowmeter is arranged for monitoring the nitrogen flow rate of the third nitrogen pipeline.
8. The process for improving the efficiency of coating a touch screen with high-film-thickness silica as claimed in any one of claims 1 to 7, wherein the flow rate of the oxygen introduced into the first coating chamber is greater than the flow rate of the oxygen introduced into the second coating chamber, and the flow rate of the oxygen introduced into the second coating chamber is greater than the flow rate of the oxygen introduced into the third coating chamber.
9. The process for improving the efficiency of coating the high-film-thickness silicon dioxide on the touch screen according to claim 8, wherein the flow rate of the Ar gas introduced into the first coating chamber is the same as the flow rates of the Ar gas introduced into the second coating chamber and the third coating chamber.
10. The process of claim 8, wherein the power setting of the first pair of SI targets is the same as the power setting of the second pair of SI targets and is greater than the power setting of the third pair of SI targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210768113.0A CN115074682A (en) | 2022-06-30 | 2022-06-30 | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210768113.0A CN115074682A (en) | 2022-06-30 | 2022-06-30 | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115074682A true CN115074682A (en) | 2022-09-20 |
Family
ID=83257857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210768113.0A Pending CN115074682A (en) | 2022-06-30 | 2022-06-30 | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115074682A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556520A (en) * | 1991-03-01 | 1996-09-17 | Leybold Aktiengesellschaft | Method for controlling a reactive sputtering process |
| CN101333643A (en) * | 2007-06-26 | 2008-12-31 | 衡阳市真空机电设备有限公司 | Reactive sputtering knee voltage control process for energy-conserving high-efficiency solar thermal-collecting tube coating machine |
| CN101786800A (en) * | 2010-02-10 | 2010-07-28 | 洛阳新晶润工程玻璃有限公司 | Method for improving production efficiency of low-emissivity coated glass |
| JP2010180432A (en) * | 2009-02-03 | 2010-08-19 | Sumitomo Metal Mining Co Ltd | Method for producing dielectric oxide film and dual-cathode magnetron sputtering apparatus |
| CN202786414U (en) * | 2012-08-14 | 2013-03-13 | 南昌欧菲光科技有限公司 | Preparation equipment of transparent conductive film for touch screen |
| JP2014084487A (en) * | 2012-10-22 | 2014-05-12 | Ulvac Japan Ltd | Method for forming thin film laminate sheet and thin film laminate sheet formation apparatus |
| TW201525164A (en) * | 2013-12-20 | 2015-07-01 | Wintek Corp | Touch panel with an optical matching layer structure and the method for forming the optical matching layer |
| JP2018048401A (en) * | 2017-10-10 | 2018-03-29 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Closed-loop control |
| CN110527963A (en) * | 2019-08-05 | 2019-12-03 | 芜湖长信科技股份有限公司 | A kind of manufacturing method that antistatic touch display is integrally shielded |
-
2022
- 2022-06-30 CN CN202210768113.0A patent/CN115074682A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556520A (en) * | 1991-03-01 | 1996-09-17 | Leybold Aktiengesellschaft | Method for controlling a reactive sputtering process |
| CN101333643A (en) * | 2007-06-26 | 2008-12-31 | 衡阳市真空机电设备有限公司 | Reactive sputtering knee voltage control process for energy-conserving high-efficiency solar thermal-collecting tube coating machine |
| JP2010180432A (en) * | 2009-02-03 | 2010-08-19 | Sumitomo Metal Mining Co Ltd | Method for producing dielectric oxide film and dual-cathode magnetron sputtering apparatus |
| CN101786800A (en) * | 2010-02-10 | 2010-07-28 | 洛阳新晶润工程玻璃有限公司 | Method for improving production efficiency of low-emissivity coated glass |
| CN202786414U (en) * | 2012-08-14 | 2013-03-13 | 南昌欧菲光科技有限公司 | Preparation equipment of transparent conductive film for touch screen |
| JP2014084487A (en) * | 2012-10-22 | 2014-05-12 | Ulvac Japan Ltd | Method for forming thin film laminate sheet and thin film laminate sheet formation apparatus |
| TW201525164A (en) * | 2013-12-20 | 2015-07-01 | Wintek Corp | Touch panel with an optical matching layer structure and the method for forming the optical matching layer |
| JP2018048401A (en) * | 2017-10-10 | 2018-03-29 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Closed-loop control |
| CN110527963A (en) * | 2019-08-05 | 2019-12-03 | 芜湖长信科技股份有限公司 | A kind of manufacturing method that antistatic touch display is integrally shielded |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102650046B (en) | Device for largely and continuously preparing two-dimensional nanometer films in large | |
| CN202558936U (en) | Apparatus for large-scale continuous preparation of two-dimensional nanometer film | |
| KR101333465B1 (en) | High frequency power distribution device and substrate processing apparatus using same | |
| CN102634776B (en) | Chemical vapor deposition device for continuously preparing two-dimensional nanofilm | |
| CN104576330A (en) | Method and structure for improving phosphorus concentration uniformity of doped polycrystalline or noncrystalline silicon chips | |
| CN102634769A (en) | Equipment for continuously preparing two-dimensional nano thin film | |
| CN104375734A (en) | Touch substrate, touch substrate manufacturing method, touch display panel and touch display device | |
| CN115074682A (en) | Process for improving film-coating efficiency of high-film-thickness silicon dioxide of touch screen | |
| CN104752136A (en) | Plasma processing device and electrostatic chuck thereof | |
| CN104658944A (en) | Reaction chamber and semiconductor processing equipment | |
| CN106756872B (en) | A kind of high throughput CVD prepares the device of siloxicon film | |
| US9951415B2 (en) | Film deposition apparatus and film deposition method | |
| CN202558924U (en) | Equipment for continuously preparing two-dimensional nano-film | |
| CN108423660A (en) | Graphene processing unit (plant) | |
| CN202380075U (en) | Low-pressure chemical vapor deposition (LPCVD) device | |
| CN103915304A (en) | Plasma etching device and dry etching device | |
| CN108277479B (en) | PECVD device capable of controlling air flow uniformly and stably | |
| CN203007406U (en) | Heating device and chemical vapor deposition equipment | |
| CN102443786A (en) | Method for strengthening uniformity of chemical vapor deposition film by improved plasma | |
| CN105575871A (en) | Carrying device and reaction chamber | |
| CN102011105B (en) | Process for depositing silica at low pressure | |
| CN207031266U (en) | Exhaust device is taken out for optical fiber curing system | |
| KR102324637B1 (en) | Piping apparatus for supplying uniform fluid | |
| CN113862644A (en) | Film coating equipment | |
| CN104803378B (en) | Substrate material surface gas phase kinetics control method prepared by graphene chemical vapour deposition technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |