CN111489956B - AlCrNbSiTi high-entropy alloy oxide insulating film material for transistor and preparation method thereof - Google Patents
AlCrNbSiTi high-entropy alloy oxide insulating film material for transistor and preparation method thereof Download PDFInfo
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- CN111489956B CN111489956B CN202010263326.9A CN202010263326A CN111489956B CN 111489956 B CN111489956 B CN 111489956B CN 202010263326 A CN202010263326 A CN 202010263326A CN 111489956 B CN111489956 B CN 111489956B
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- 229910002064 alloy oxide Inorganic materials 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 230000007704 transition Effects 0.000 claims abstract description 19
- 238000007733 ion plating Methods 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000000462 isostatic pressing Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 45
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Abstract
The invention provides an AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor, which is characterized by comprising the following components in percentage by weight: the bonding layer is a Cr layer formed on the substrate by adopting an arc ion plating method; the transition layer is a CrN layer formed on the bonding layer by adopting an arc ion plating method; and an insulating layer formed by depositing (Al) on the transition layer by arc ion plating x Cr y Nb z Si m Ti n ) (1‑p) O p A high entropy insulating layer. The high-entropy alloy oxide insulating film provided by the invention has excellent thermal stability, can still keep good insulating property at high temperature, and can enable the film resistance value to be 1 multiplied by 10 by adjusting the proportion of alloy elements and oxygen elements 10 Ω～5×10 12 In the omega interval, the hardness is changed in the 7.5-25 Gpa interval, the color of the film is transparent or semitransparent, the thermal stability is good, and the insulating property is maintained at high temperature.
Description
Technical Field
The invention belongs to the technical field of thin film materials, and particularly relates to an AlCrNbSiTi high-entropy alloy oxide insulating thin film material for a transistor and a preparation method thereof.
Background
The thin film transistor has important application in the field of microelectronics, and the performance of the insulating layer as an important component of the thin film transistor determines the stacking condition of interface charges, so that the reliability, stability, response speed and the like of the device are influenced. Therefore, the optimization of the insulating layer material has important significance for improving the performance of the thin film transistor.
At present, the commonly used insulating layer materials in the thin film transistor medium are silicon nitride, silicon dioxide, aluminum nitride, aluminum oxide and the like, the traditional insulating film preparation process is complex, and the commonly used preparation process comprises electron beam evaporation, PLD, sol-gel, thermal growth method, magnetron sputtering and the like. Pinholes are easy to appear in the film prepared by electron beam evaporation, and the density of the film is poor; the PLD method has high deposition energy and small deposition area; the film prepared by the sol-gel method also has the problem of micropores; the thermal growth process has a long period, and the mechanical structure and the strength of the metal substrate are damaged by high-temperature treatment at the temperature of more than 1000 ℃ for a long time; the film prepared by the magnetron sputtering method has high density but low deposition rate. In addition, the transistor preparation process usually needs high-temperature annealing, and the traditional insulating material has poor high-temperature resistance, so that the application of the traditional insulating material in the transistor is limited, such as Al 2 O 3 The electrical insulation of the film decreases exponentially with the temperature, and the resistance can only reach 10 at high temperature 3 Omega; alN and Si 3 N 4 The N atom in (b) diffuses into the oxide semiconductor at high temperature.
Disclosure of Invention
The invention aims to provide an AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following scheme:
< insulating film >
The invention provides an AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor, which is characterized by comprising the following components in percentage by weight: the bonding layer is a Cr layer formed on the substrate by adopting an arc ion plating method; the transition layer is a CrN layer formed on the bonding layer by adopting an arc ion plating method; and an insulating layer deposited by arc ion platingFormed on the transition layer of (Al) x Cr y Nb z Si m Ti n ) (100-p) O p A high entropy insulating layer.
Preferably, the AlCrNbSiTi high-entropy alloy oxide insulating thin film material for the transistor provided by the invention can also have the following characteristics: in (Al) x Cr y Nb z Si m Ti n ) (100-p) O p In the high-entropy insulating layer, the values of x and y are controlled to be between 15 and 30, the values of z, m and n are controlled to be between 15 and 20, and the value of p is controlled to be between 20 and 60.
Preferably, the AlCrNbSiTi high-entropy alloy oxide insulating thin film material for the transistor provided by the invention can also have the following characteristics: the thickness of the bonding layer is 10-30 nm, the thickness of the transition layer is 50-100 nm, and the thickness of the insulating layer is 50-200 nm.
Preferably, the AlCrNbSiTi high-entropy alloy oxide insulating thin film material for the transistor provided by the invention can also have the following characteristics: the total thickness of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor is controlled to be 150-300 nm.
< preparation method >
Further, the invention also provides a preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor, which is characterized by comprising the following steps of:
step 1, cleaning the surface of a substrate: carrying out ultrasonic cleaning on a transistor substrate by an organic solvent and deionized water in sequence, then drying and placing the transistor substrate into a vacuum chamber, and carrying out arc plasma etching on the transistor substrate in an inert gas environment;
step 2, depositing a bonding layer, a transition layer and an insulating layer on the transistor substrate in sequence by adopting an arc ion plating method to obtain a high-temperature-resistant insulating film,
wherein the bonding layer is a Cr layer, the transition layer is a CrN layer, and the insulating layer is (Al) x Cr y Nb z Si m Ti n ) (100-p) O p A high entropy insulating layer.
Preferably, the preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor provided by the invention is characterized by comprising the following steps: in the step 1, the ultrasonic cleaning time is 10-15 minutes, argon is adopted as inert gas, and arc plasma etching is carried out on the transistor substrate at-800V to-1000V.
Preferably, the preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor provided by the invention can also have the following characteristics: in step 2, the preparation process of the bonding layer is as follows: starting the Cr target, wherein the deposition condition is that the air pressure is 0.02-0.5 Pa, the negative bias is-800 to-1000V, and the atmosphere is argon.
Preferably, the preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor provided by the invention can also have the following characteristics: in step 2, the preparation process of the transition layer comprises the following steps: starting a Cr target, wherein the deposition condition is that the air pressure is 0.5-2 Pa and the negative bias is-150 to-200V; the atmosphere was nitrogen.
Preferably, the preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor provided by the invention can also have the following characteristics: in step 2, the preparation process of the insulating layer comprises the following steps: starting AlCrNbSiTi target, the deposition condition is 0.2-3.0 Pa, -150 to-200V, and the deposition atmosphere is oxygen.
Preferably, the preparation method of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor provided by the invention can also have the following characteristics: in the AlCrNbSiTi target material, the atomic percent of Al and Cr is 15-30, the atomic percent of Nb, ti and Si is controlled at 15-20; the AlCrNbSiTi target is prepared by sintering Al, cr, nb, si and Ti powder serving as raw materials in an isostatic pressing manner according to a corresponding molar ratio.
Action and Effect of the invention
1. The invention adopts the high-entropy alloy oxide film, has excellent thermal stability, can still keep good insulating property at high temperature, can be used in high-temperature environment, and widens the application field of the film.
2. The components and properties of the AlCrNbSiTi high-entropy alloy oxide can be flexibly regulated and controlled by changing the proportion of metal elements and the oxygen flow, insulating films with different optical properties and resistance values can be obtained, and alloy elements are adjustedThe ratio of element to oxygen element can make the film resistance value be 1 x 10 10 Ω～5×10 12 In the omega region, the hardness is changed in the range of 7.5Gpa to 25Gpa, the color of the film is transparent or semitransparent, the thermal stability is good, the insulating property can be kept at high temperature, and the film can be used in the field of high-temperature film sensors.
3. Compared with the conventional magnetron sputtering technology, the invention adopts the arc ion plating technology, thereby greatly improving the deposition efficiency of the film.
4. Compared with the common glow discharge ion source, the ion cleaning method adopts the arc discharge ion source to carry out the ion cleaning before the film coating, can greatly improve the surface quality of the surface of the transistor substrate and improve the adhesive force of the oxide insulating film.
Drawings
FIG. 1 is a schematic structural diagram of an AlCrNbSiTi high-entropy alloy oxide insulating film material for transistors according to an embodiment of the present invention;
FIG. 2 is a surface topography of AlCrNbSiTi high entropy alloy oxide insulation film material for transistors according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of an AlCrNbSiTi high-entropy alloy oxide insulating film material for transistors according to an embodiment of the present invention;
in the figure, 10-AlCrNbSiTi high-entropy alloy oxide insulating film material, 11-bonding layer, 12-transition layer, 13-insulating layer and S-transistor substrate.
Detailed Description
The present invention relates to an AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor and a method for manufacturing the same, which will be described in detail below with reference to the accompanying drawings.
< example one >
(Al) provided by the present example 34 Cr 22 Nb 11 Si 11 Ti 11 ) 80 O 20 The preparation method of the high-entropy alloy oxide insulating film comprises the following steps: adopts Al as the element percentage 34 Cr 22 Nb 11 Si 11 Ti 11 The target material is cleaned by argon ion bombardment on the transistor substrate at the temperature of 400 ℃ in an argon environmentWashing, and depositing a 30-nanometer transition metal Cr bonding layer under the condition of 0.02-0.2Pa, 800-1000V; preparing a 50-nanometer CrN transition layer in a nitrogen atmosphere at 0.5Pa and-150V; depositing 100nm thick (Al) under 0.1Pa oxygen and-150V 34 Cr 22 Nb 11 Si 11 Ti 11 ) 80 O 20 Insulating layer, and naturally cooling after preparation.
After testing, (Al) obtained in the example 34 Cr 22 Nb 11 Si 11 Ti 11 ) 80 O 20 The resistance of the high-entropy alloy oxide insulating film is 0.2 multiplied by 10 12 Omega, the heat resistance of the coating can reach more than 1000 ℃, and the components, the appearance and the structure of the coating are kept unchanged at the high temperature of 1000 ℃, and the insulating property of the coating is still kept. As shown in FIG. 1, (Al) 34 Cr 22 Nb 11 Si 11 Ti 11 ) 80 O 20 The high-entropy alloy oxide insulating film is of a gradient structure and sequentially comprises a bonding layer 11, a transition layer 12 and an insulating layer 13 from bottom to top, and is reasonable in design and capable of reducing stress of surface oxides and transistor substrate materials. As shown in FIG. 2, the prepared film has smooth surface and dense film. As shown in FIG. 3, the prepared film is uniform and dense and has good bonding with the substrate.
< example two >
(Al) provided by this example 34 Cr 22 Nb 11 Si 11 Ti 11 ) 60 O 40 The preparation method of the high-entropy alloy oxide insulating film comprises the following steps: adopts Al as the element percentage 34 Cr 22 Nb 11 Si 11 Ti 11 The transistor substrate is cleaned by argon ion bombardment at 250 ℃ in an argon atmosphere, and a transition metal Cr bonding layer with the thickness of 20 nanometers is deposited under the conditions of 0.1Pa and 800V. Preparing a 100-nanometer CrN transition layer in a nitrogen atmosphere at 2Pa, 150V; depositing 150nm thick (Al) under 0.3Pa oxygen and 100V 34 Cr 22 Nb 11 Si 11 Ti 11 ) 60 O 40 Insulating layer, and naturally cooling after preparation. The sheet resistance obtained in this example was 5X 10 12 Omega, the heat resistance of the coating can reach more than 1000 ℃.
After testing, (Al) obtained in the example 34 Cr 22 Nb 11 Si 11 Ti 11 ) 60 O 40 The resistance of the high-entropy alloy oxide insulating film is 5 multiplied by 10 12 Omega, the heat resistance of the coating can reach more than 1000 ℃, and the components, the appearance and the structure of the coating are all kept unchanged at the high temperature of 1000 ℃, and the insulating property of the coating is still kept.
< example three >
(Al) provided by the present example 30 Cr 30 Nb 15 Si 10 Ti 15 ) 50 O 50 The preparation method of the high-entropy alloy oxide insulating film comprises the following steps: adopts Al as the element percentage 30 Cr 30 Nb 15 Si 10 Ti 15 The target material is used for carrying out argon ion bombardment cleaning on a transistor substrate at the temperature of 300 ℃ in an argon environment, and depositing a transition metal Cr bonding layer with the thickness of 20 nanometers under the conditions of 0.2Pa and minus 900V; preparing an 80 nanometer CrN transition layer in a nitrogen atmosphere at 0.5Pa, 100V; deposition of 200nm thick (Al) in 0.4Pa oxygen, 120V 30 Cr 30 Nb 15 Si 10 Ti 15 ) 50 O 50 Insulating layer, and naturally cooling after preparation.
After testing, (Al) obtained in the example 30 Cr 30 Nb 15 Si 10 Ti 15 ) 50 O 50 The resistance of the high-entropy alloy oxide insulating film is 4 multiplied by 10 12 Omega, the heat resistance of the coating can reach more than 1000 ℃, and the components, the appearance and the structure of the coating are kept unchanged at the high temperature of 1000 ℃, and the insulating property of the coating is still kept.
< example four >
(Al) provided by this example 30 Cr 30 Nb 20 Si 10 Ti 10 ) 40 O 60 The high-entropy alloy oxide insulating film comprises the following steps: adopts Al as atomic percentage 30 Cr 30 Nb 20 Si 10 Ti 10 The target material is used for carrying out argon ion bombardment cleaning on a transistor substrate at the temperature of 450 ℃ in an argon environment, and depositing a transition metal Cr bonding layer with the thickness of 30 nanometers under the conditions of 0.2Pa and minus 900V; at 1 Pa-Preparing a 60-nanometer CrN transition layer in a nitrogen atmosphere at 150V; depositing 100nm thick (Al) under 3Pa oxygen and-50V 30 Cr 30 Nb 20 Si 10 Ti 10 ) 40 O 60 Insulating layer, and naturally cooling after preparation.
After testing, (Al) obtained in the example 30 Cr 30 Nb 20 Si 10 Ti 10 ) 40 O 60 The resistance of the high-entropy alloy oxide insulating film is 2.5 multiplied by 10 12 Omega, the heat resistance of the coating can reach more than 1000 ℃, and the components, the appearance and the structure of the coating are kept unchanged at the high temperature of 1000 ℃, and the insulating property of the coating is still kept.
The above embodiments are merely illustrative of the technical solutions of the present invention. The alcrnbbiti high-entropy alloy oxide insulating film material for transistors and the preparation method thereof according to the present invention are not limited to the contents described in the above embodiments, but are subject to the scope defined by the claims. Any modification or supplement or equivalent replacement made by a person skilled in the art on the basis of this embodiment is within the scope of the invention as claimed in the claims.
Claims (9)
1. An AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor is characterized by comprising the following components in percentage by weight:
the bonding layer is a Cr layer formed on the substrate by adopting an arc ion plating method;
the transition layer is a CrN layer deposited on the bonding layer by adopting an arc ion plating method; and
an insulating layer formed by depositing (Al) on the transition layer by arc ion plating x Cr y Nb z Si m Ti n ) (100-p) O p A high-entropy insulating layer;
wherein, in (Al) x Cr y Nb z Si m Ti n ) (100-p) O p In the high-entropy insulating layer, the values of x and y are controlled to be between 15 and 30, the values of z, m and n are controlled to be between 15 and 20, and the value of p is controlled to be between 20 and 60.
2. The AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor as claimed in claim 1, wherein:
the thickness of the bonding layer is 10-30 nm, the thickness of the transition layer is 50-100 nm, and the thickness of the insulating layer is 50-200 nm.
3. The AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor as claimed in claim 2, wherein:
wherein the total thickness of the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor is controlled to be 150-300 nm.
4. A preparation method of an AlCrNbSiTi high-entropy alloy oxide insulating film material for a transistor is characterized by comprising the following steps of:
step 1, cleaning the surface of a substrate: carrying out ultrasonic cleaning on a transistor substrate by an organic solvent and deionized water in sequence, then drying and placing the transistor substrate into a vacuum chamber, and carrying out arc plasma etching on the transistor substrate in an inert gas environment;
step 2, depositing a bonding layer, a transition layer and an insulating layer on the transistor substrate in sequence by adopting an arc ion plating method to obtain a high-temperature-resistant insulating film,
wherein the bonding layer is a Cr layer, the transition layer is a CrN layer, and the insulating layer is (Al) x Cr y Nb z Si m Ti n ) (100-p) O p A high-entropy insulating layer; in (Al) x Cr y Nb z Si m Ti n ) (100-p) O p In the high-entropy insulating layer, the values of x and y are controlled to be between 15 and 30, the values of z, m and n are controlled to be between 15 and 20, and the value of p is controlled to be between 20 and 60.
5. The method for preparing the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor as claimed in claim 4, wherein the method comprises the following steps:
in the step 1, the ultrasonic cleaning time is 10-15 minutes, argon is used as inert gas, and arc plasma etching is carried out on the transistor substrate at-800V to-1000V.
6. The method for preparing the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor according to claim 4, wherein the method comprises the following steps:
in step 2, the preparation process of the bonding layer comprises the following steps: starting the Cr target, wherein the deposition condition is that the air pressure is 0.02-0.5 Pa, the negative bias is-800 to-1000V, and the atmosphere is argon.
7. The method for preparing the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor according to claim 4, wherein the method comprises the following steps:
in step 2, the preparation process of the transition layer comprises the following steps: starting a Cr target, wherein the deposition condition is that the air pressure is 0.5-2 Pa and the negative bias is-150 to-200V; the atmosphere was nitrogen.
8. The method for preparing the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor as claimed in claim 4, wherein the method comprises the following steps:
in step 2, the preparation process of the insulating layer comprises the following steps: starting AlCrNbSiTi target, the deposition condition is 0.2-3.0 Pa, -150 to-200V, and the deposition atmosphere is oxygen.
9. The method for preparing the AlCrNbSiTi high-entropy alloy oxide insulating film material for the transistor according to claim 8, wherein the method comprises the following steps:
wherein, in the AlCrNbSiTi target material, the atomic percentages of Al atoms and Cr are 15-30, and the atomic percentages of Nb, ti and Si are controlled at 15-20; the AlCrNbSiTi target is prepared by sintering Al, cr, nb, si and Ti powder serving as raw materials in an isostatic pressing manner according to a corresponding molar ratio.
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