CN208733216U - A kind of filming equipment - Google Patents
A kind of filming equipment Download PDFInfo
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- CN208733216U CN208733216U CN201821256383.9U CN201821256383U CN208733216U CN 208733216 U CN208733216 U CN 208733216U CN 201821256383 U CN201821256383 U CN 201821256383U CN 208733216 U CN208733216 U CN 208733216U
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Abstract
The utility model relates to a kind of filming equipments, including vacuum chamber (1), the target pedestal (11) and substrate chuck (12) being arranged in the vacuum chamber (1), the target pedestal (11) are set to the top of the substrate chuck (12)；It further include electrode switching device (13)；The electrode switching device (13) and the target pedestal (11) are connected with each other, and the target pedestal (11) is even number.Pass through the electric polarity of checker sputtering target material, to realize the utility model in coating process, positively charged plasma is set to bombard the sputtering target material of electric polarity cathode in turn, long-time to avoid bombards the same sputtering target material and leads to sputtering target material " poisoning ", and then it avoids in coating process, the failure of sputtering target material, effectively increases the service life of sputtering target material, and further improves the plating membrane efficiency of filming equipment.
Description
Technical field
The utility model relates to a kind of filming equipment more particularly to a kind of filming equipments for optical filter.
Background technique
With the development of science and technology, in smart phone, mobile lidar, safe burglar-proof gate inhibition, smart home, virtual reality/increasing
Recognition of face is gradually embedded in the terminals utilizations such as strong reality/mixed reality, 3D somatic sensation television game, 3D camera shooting and display, gesture is known
The functions such as not.Correspondingly, can be played close in anti-reflection copper strips to realize that above-mentioned function then needs to use near-infrared narrow band filter
Infrared light ends the effect of visible light in environment.Usual near-infrared narrow band filter includes two membrane systems, respectively IR band logical
Membrane system and long wave lead to AR membrane system.Traditional coating materials and vacuum vapor plating mode are difficult to meet emerging market demand, therefore cause existing
There is the optical filter in technology poor to the antireflective effect of near infrared light and the effect of cut-off visible light, in a larger angle
Object reflection or transmitting light are deviated by the optical signal passband that infrared sensor sensitivity captures in range, lead to signal noise
Increase, and then causes identification abnormal, after filter set is attached to the devices such as recognition of face, gesture identification, imaging effect
Fruit is poor, accuracy of identification is not high, moreover, the production efficiency of near-infrared narrow band filter is low in traditional technology, it is difficult to meet increasingly
The market of growth needs.
Utility model content
The purpose of this utility model is to provide a kind of filming equipment, solve the problems, such as that optical filter production efficiency is low.
To realize above-mentioned purpose of utility model, the utility model provides a kind of filming equipment, including vacuum chamber, is arranged in institute
Target pedestal and the substrate chuck in vacuum chamber are stated, the target pedestal is set to the top of the substrate chuck；It further include electricity
Pole switching device；
The electrode switching device and the target pedestal are connected with each other, and the target pedestal is even number.
One aspect according to the present utility model is provided with linear displacement apparatus on the target pedestal；
Along the vertical direction, the linear displacement apparatus drives the target pedestal to move back and forth.
One aspect according to the present utility model, further includes: be set in the vacuum chamber adjacent with the target pedestal
And for providing and enhance the radio-frequency signal generator of the target base position plasma motion speed, and setting with it is described true
Empty room outside and the alternating magnetic field device opposite with the target pedestal.
One aspect according to the present utility model, further includes: the ion source on the vacuum chamber and air extractor are set,
For being passed through the air inlet pipe of gas into the vacuum chamber, for extracting the escape pipe of gas in the vacuum chamber；
The air inlet pipe include the first air inlet pipe for conveying inert gas and second for being passed through reaction gas into
Tracheae.
One aspect according to the present utility model, the air inlet pipe are oppositely arranged with the escape pipe.
One aspect according to the present utility model, the electrode switching device are ac electrode switching device.
To realize above-mentioned purpose of utility model, the utility model provides a kind of film plating process, comprising:
S1., sputtering target material and substrate are installed respectively in a vacuum chamber, and the pressure in vacuum chamber is controlled in preset pressure
Value；
S2. be passed through inert gas to the vacuum chamber, and will be bombarded after the ionized inert gas sputtering target material and
The surface of the substrate is pre-processed；
S3. it is passed through reaction gas into the vacuum chamber, is coated with film layer on the substrate, wherein is handed over predetermined period
For the electric polarity for converting the sputtering target material.
The volume flow that one aspect according to the present utility model, the inert gas and the reaction gas are passed through is less than
120sccm。
One aspect according to the present utility model, the inert gas are argon gas, and the reaction gas is hydrogen or oxygen；
If the reaction gas is hydrogen, 0.2≤V of volume flow satisfaction of the argon gas and the hydrogenH2/VAr≤
0.5, wherein the VH2For the volume flow of hydrogen, the VArFor the volume flow of argon gas.
One aspect according to the present utility model, in step S3, when being coated with film layer on the substrate, sputtering reaction temperature
Degree is 80 DEG C~300 DEG C, and sputter rate V meets: 0.1nm/s≤V≤1nm/s.
One aspect according to the present utility model, in step S3, the film layer includes that IR band logical film layer and AR long wave lead to film
Layer, the IR band logical film layer and the AR long wave lead to film layer and are coated on the opposite two sides of the substrate respectively；
The IR band logical film layer and the AR long wave lead to film layer and first refractive index material, the second refractive index material are respectively adopted
Two or three of alternating in material, third reflect rate material is coated with, wherein the refractive index of the first refractive index material is small
In 3, the refractive index of second refraction materials is greater than 3, and the refractive index of the third reflect rate material is less than 4.
One aspect according to the present utility model, the IR band logical film layer and the AR long wave lead to film layer respectively with the base
One layer of bottom connection is coated with using the first refractive index material or the third reflect rate material；
The IR band logical film layer and the AR long wave lead to film layer and use described first for one layer close with incident medium respectively
Refraction materials or the third reflect rate material are coated with.
One aspect according to the present utility model, the first refractive index material are Nb2O5、Ta2O5、TiO2、SiO2、
ZrO2、Si2N、SiN、Si2N3、Si3N4One or more of mixture.
One aspect according to the present utility model, second refraction materials are silane.
The electric polarity of checker sputtering target material may be implemented in a kind of scheme according to the present utility model, even number target,
To realize the utility model in coating process, positively charged plasma is made to bombard the sputtering of electric polarity cathode in turn
Target so that the long-time avoided bombards the same sputtering target material and leads to sputtering target material " poisoning ", and then is avoided in plated film
In the process, the failure of sputtering target material effectively increases the service life of sputtering target material, so that equipment is carried out continuously plated film raw
It produces, and further improves the plating membrane efficiency of filming equipment.
Atom sputtering on target to substrate surface is sputtered reaction temperature by a kind of scheme according to the present utility model
It is 80 DEG C~300 DEG C, sputter rate is arranged in the range of 0.1nm/s≤V≤1nm/s, can preferably match substrate chuck
The jittering characteristic of place rotary system, to make the disk difference for the substrate being carried in substrate chuck be less than 6nm, to make on base
The attachment of atom is more uniform, and then makes in substrate that the thickness of plated film is uniform, keeps coating effects more preferable, coating performance is more excellent.
A kind of scheme according to the present utility model is set by the way that argon gas, hydrogen, oxygen are passed through the volume flow in vacuum chamber
It is set to and is less than 120sccm, and when reaction gas is hydrogen, the volume flow of argon gas and hydrogen meets 0.2≤VH2/VAr≤
0.5, then the product stress of plated film can be effectively improved during being coated with film layer, to make the film layer internal structure being coated with more
Stablize, improve plating membrane stress bending caused by uniformity is poor, film layer fragmentation, collapses film, attaches the defects of glue rear demoulding, raising
Properties of product and yield, further ensure the service life and using effect of film layer.
A kind of scheme according to the present utility model (is bombarded after ionizing to inert gas and is sputtered by using ion source
The surface of target and substrate ensure that so that the impurity on sputtering target material and substrate surface be made to be efficiently removed in coating process
In, the cleaning of sputtering target material and substrate surface, thus to the quality for the film layer being coated in substrate is improved, while can also mention
Adhesive force of the high substrate to film layer atom.
A kind of scheme according to the present utility model, is formed on the substrate the film layer of more compact deposits, has preferably attachment
Power, stronger hardness and adhesion strength；With higher deposition rate, smooth boundary layer and unformed layer knot are formed
Structure, therefore there is lower scattering or absorption loss water.The near-infrared narrow band filter made by the utility model, can be in height
Under the premise of transmitance, narrow band filter passband center wavelengths can be greatly reduced with angle drift amount, improve narrow-band-filter
The steepness of piece transition region improves recognition of face, signal-to-noise ratio in gesture recognition system, when reducing film layer overall thickness and total plated film
Between, production cost is reduced, has saved use cost for terminal client.
Detailed description of the invention
Fig. 1 schematically shows a kind of structure chart of the filming equipment of embodiment according to the present utility model；
Fig. 2 schematically shows the inert gas volume flow and plating membrane stress of a kind of embodiment according to the present utility model
Relational graph；
Fig. 3 schematically shows the structure for the near-infrared narrow band filter that a kind of embodiment according to the present utility model is coated with
Figure；
Fig. 4 schematically shows the near-infrared narrow band filter transmitance that a kind of embodiment according to the present utility model is coated with
With wavelength curve relational graph.
Specific embodiment
It, below will be to implementation in order to illustrate more clearly of the utility model embodiment or technical solution in the prior art
Attached drawing needed in mode is briefly described.It should be evident that the accompanying drawings in the following description is only that this is practical new
Some embodiments of type for those of ordinary skills without creative efforts, can be with
It obtains other drawings based on these drawings.
When being described for the embodiments of the present invention, term " longitudinal direction ", " transverse direction ", "upper", "lower",
"front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", orientation or positional relationship is expressed by "outside"
Based on orientation or positional relationship shown in relevant drawings, it is merely for convenience of describing the present invention and simplifying the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore on
Stating term should not be understood as limiting the present invention.
The utility model is described in detail with reference to the accompanying drawings and detailed description, embodiment cannot herein one
One repeats, but therefore the embodiments of the present invention is not defined in following implementation.
As shown in Figure 1, a kind of embodiment according to the present utility model, a kind of filming equipment of the utility model includes true
Target pedestal 11, substrate chuck 12 and electrode switching device 13 in vacuum chamber 1 is arranged in empty room 1.In the present embodiment,
The top that substrate chuck 12 be set opposite with substrate chuck 12 of target pedestal 11.In the present embodiment, target pedestal 11
For even number, electrode switching device 13 and target pedestal 11 are connected with each other.It is acted on by the switching of electrode switching device 13, it can be with
Conveniently realize that cathode is presented in the electric polarity on different target pedestals 11.In the present embodiment, electrode switching device 13
For ac electrode switching device.
A kind of embodiment according to the present utility model is provided with linear displacement apparatus on target pedestal 11.In this implementation
In mode, along the vertical direction (i.e. longitudinal in Fig. 1), linear displacement apparatus driving target pedestal 11 is moved back and forth up and down.Pass through line
Property gearshift realize the accurate adjustment of distance between target pedestal 11 and substrate chuck 12, to be conducive in coating process
11 position of target pedestal is adjusted flexibly.
As shown in Figure 1, a kind of embodiment according to the present utility model, a kind of filming equipment of the utility model further include
Radio-frequency signal generator 14 (RF generator 14).In the present embodiment, the setting adjacent with target pedestal 11 of radio-frequency signal generator 14 exists
The side of target pedestal 11, during the work time, radio-frequency signal generator 14 are capable of providing and enhance the movement velocity of plasma, from
And the density of 11 position plasma of target pedestal is enhanced, to further promote sputter rate, improve substrate quality of forming film.
As shown in Figure 1, a kind of embodiment according to the present utility model, a kind of filming equipment of the utility model further include
Alternating magnetic field device 19.In the present embodiment, alternating magnetic field device 19 is located at the outside of vacuum chamber 1 and opposite with target pedestal 11
Setting.Sputtering during the utility model carries out sputter coating to the substrate b in substrate chuck 12, on target pedestal 11
Target a is cathode, and the substrate in substrate chuck 12 is anode, therefore, has in target pedestal 11 and substrate chuck 12 and is used for
To the electric field that plasma is accelerated, the direction of motion of the plasma passed through by 19 Duis of alternating magnetic field device is changed,
Plasma is set to bombard on sputtering target material a or substrate b.Electromagnetic field, which is generated, by alternating magnetic field device 19 guides plasma
Body bombardment target or substrate surface are pre-processed.And then in coating process, film quality can be improved by plasma.
As shown in Figure 1, a kind of embodiment according to the present utility model, a kind of filming equipment of the utility model further include
Ion source 15, air extractor 16, air inlet pipe 17 and escape pipe 18.In the present embodiment, ion source 15 and air extractor 16 are solid
Dingan County is connected with the inside of vacuum chamber 1 respectively on the side wall of vacuum chamber 1.It can be true to being passed through by ion source 15
Inert gas in empty room 1 is ionized, it is made to generate the plasma with positive charge.In the present embodiment, ion source
15 can be used radio-frequency ion source.In the present embodiment, air extractor 16 is used to control the gas pressure in vacuum chamber.In this reality
It applies in mode, air extractor 16 can be vacuum pump.During utility model works, air extractor 16 is in vacuum chamber
Gas extraction, to control the pressure value that the pressure in vacuum chamber 1 is maintained at setting.In the present embodiment, horizontal along Fig. 1
To radio-frequency signal generator 14 is between ion source 15 and target pedestal 11, to ensure that radio-frequency signal generator 14 can be to ion
The plasma that source 15 generates is accelerated in time, keeps its acceleration time elongated, and then be conducive to improve and bang sputtering target material a
Hit effect.Meanwhile by above-mentioned setting, the plasma that ion source 15 generates accelerates to be high energy plasma by radio-frequency signal generator
Body, and under the action of alternating magnetic field of alternating magnetic field device 19, under the electric field action between substrate b and sputtering target material a, bombardment
Target, so that alternating magnetic field device 19 can sufficiently control the direction of the plasma after being accelerated by radio-frequency signal generator 14,
It is further beneficial to coating quality is improved in coating process.
As shown in Figure 1, a kind of embodiment according to the present utility model, air inlet pipe 17 includes the first air inlet pipe 171 and the
Two air inlet pipe 172.In the present embodiment, the first air inlet pipe 172 is connected with the inside of vacuum chamber 1, for conveying indifferent gas
Body, the second air inlet pipe 172 are connected with the inside of vacuum chamber 1 for conveying reaction gas.Due to what is used in coating process
Reaction gas has a variety of (such as two kinds), then the second air inlet pipe 172 setting corresponding with the type of reaction gas, by by the
Two air inlet pipe 172 setting corresponding with reaction gas, to ensure that each second air inlet pipe 172 conveys the single of gas
Property, the mixing of reaction gas is avoided, advantageously ensures that coating quality and working efficiency.In the present embodiment, air inlet pipe 17
It is oppositely arranged with escape pipe 18, by setting opposite for air inlet pipe 17 and escape pipe 18, to ensure that into vacuum chamber 1
In excessive gas can be extracted out in time from escape pipe 18.Pass through being oppositely arranged for air inlet pipe 17 and escape pipe 18, air inlet pipe
Relative distance between 17 and escape pipe 18 is short, so that gas be made to flow during flowing into vacuum chamber 1 to outflow vacuum chamber 1
Path is short, influences caused by plated film so as to avoid reaction gas in vacuum chamber flowing, further improves coating quality.?
In present embodiment, air inlet pipe 17 is located at the side setting of target pedestal 11, and same escape pipe 18 is located at substrate chuck 12
Therefore side setting further avoids influence when being coated with to the input of vacuum chamber 1 and gas bleeding to film layer, and then to guarantor
It is beneficial to demonstrate,prove coating quality.
A kind of film plating process of a kind of embodiment according to the present utility model, the utility model includes:
S1., sputtering target material a and substrate b are installed respectively in vacuum chamber 1, and by the pressure control in vacuum chamber 1 default
Pressure value.In the present embodiment, sputtering target material a is installed on the target pedestal 11 in vacuum chamber 1, in the present embodiment,
Silicon target or niobium target can be used in sputtering target material a, naturally it is also possible to be other materials, as the case may be depending on.In base pinch
Installation needs to be coated with the substrate b of film layer on tool 12.Control the linear displacement apparatus adjustment target pedestal 11 on target pedestal 11
Position.16 power supply of air extractor is connected, vacuum chamber 1 is evacuated by air extractor 16, reaches the pressure value in vacuum chamber 1
To preset pressure value, and it is out of service.
S2. inert gas, and the surface for sputtering target material a and substrate b being bombarded after ionized inert gas are passed through to vacuum chamber 1
It is pre-processed.In the present embodiment, it is connected by the first air inlet pipe 171 with inert gas source, and is led into vacuum chamber 1
Enter inert gas.In the present embodiment, the volume flow that inert gas is passed through is less than 120sccm.Ion source 15 is started to work,
The ionized inert gas of input is generated to positively charged plasma.In the present embodiment, it is mentioned by radio-frequency signal generator 14
For and enhance the concentration of the energetic plasma around target pedestal 11, and pass through the effect of alternating magnetic field device 19, by high energy
Plasma bombards the surface of sputtering target material a and substrate b respectively, to remove the impurity on sputtering target material a and the surface substrate b
(for example, water, oxide and other impurity), the impurity of removal is extracted from escape pipe 18.In the present embodiment, inert gas
For argon gas, it can also be certainly other inert gases, can be replaced accordingly according to the actual situation.By to inert gas into
The surface of sputtering target material and substrate is bombarded after row ionization, so that it is efficiently removed the impurity on sputtering target material and substrate surface,
It ensure that in coating process, the cleaning of sputtering target material and substrate surface, thus to the quality for improving the film layer being coated in substrate
It is beneficial, while can also be improved substrate to the adhesive force of film layer atom.
S3. it is passed through reaction gas into vacuum chamber 1, film layer is coated in substrate, wherein splashed with predetermined period checker
It shoots at the target the electric polarity of material a.In the present embodiment, it completes at predetermined intervals to the surface sputtering target material a and the surface substrate b
Preprocessing process, then reaction gas is further passed through into vacuum chamber 1 by the second air inlet pipe 172, starts the table in substrate b
Film layer is coated on face.In the present embodiment, inert gas is generated after the ionization of ion source 15 with positive charge
Plasma, and plasma constantly bombards sputtering target material a, so that the atom sputtering on target to the surface substrate b and adheres to.
After being passed through vacuum chamber 1 with predetermined pressure, reaction gas is reacted reaction gas with the atom that the surface substrate b is adhered to, thus
Complete being coated with for film layer.In the present embodiment, the volume flow that reaction gas is passed through is less than 120sccm.
In the present embodiment, pass through the electrode of 13 checker target pedestal 11 of electrode switching device with predetermined period
Property, so that the electric polarity of the sputtering target material a on different target pedestals 11 is transformed to cathode with predetermined period.For example, working as target pedestal
11 be two when, the electric polarity cathode of the sputtering target material a on one of target pedestal 11 is made by electrode switching device 13,
The not aobvious electric polarity of sputtering target material a on another target pedestal 11.After having served as certain time (predetermined period), electric polarity is yin
The sputtering target material a of pole passes through the transformation of electrode switching device 13, converts its electric polarity, and another sputtering target material a
Electric polarity then becomes cathode.By the electric polarity of checker sputtering target material a, to realize the utility model in coating process
In, so that positively charged plasma is bombarded the sputtering target material a of electric polarity cathode in turn, so that the long-time bombardment avoided is same
One sputtering target material a and lead to sputtering target material a " poisoning ", and then avoid in coating process, the failure of sputtering target material a has
Effect improves the service life of sputtering target material a, ensure that being carried out continuously for sputtering reaction, and further improve filming equipment
Plating membrane efficiency.In the present embodiment, when being coated with film layer in substrate, sputtering reaction temperature is 80 DEG C~300 DEG C, sputtering
Rate V meets: 0.1nm/s≤V≤1nm/s.By the atom sputtering on target to substrate surface, sputtering reaction temperature is 80 DEG C
~300 DEG C, sputter rate is arranged in the range of 0.1nm/s≤V≤1nm/s, can preferably match 12 place of substrate chuck
The jittering characteristic of rotary system, to make the disk difference for the substrate b being carried in substrate chuck 12 be less than 6nm, to make on base
The attachment of atom is more uniform, and then makes in substrate that the thickness of plated film is uniform, keeps coating effects more preferable, coating performance is more excellent.
A kind of embodiment according to the present utility model, inert gas use argon gas, and reaction gas uses hydrogen or oxygen.
In the present embodiment, the volume flow that argon gas, hydrogen, oxygen are passed through into vacuum chamber 1 respectively is less than 120sccm, and works as
When reaction gas is hydrogen, the volume flow of argon gas and hydrogen meets:
0.2≤VH2/VAr≤ 0.5,
Wherein, the VH2For the volume flow of hydrogen, the VArFor the volume flow of argon gas.
It is set smaller than 120sccm by the volume flow that argon gas, hydrogen, oxygen are passed through in vacuum chamber 1, and when anti-
When to answer gas be hydrogen, the volume flow of argon gas and hydrogen meets 0.2≤VH2/VAr≤ 0.5, then it can be in the process for being coated with film layer
In be effectively improved the product stress of plated film, to keep the film layer internal structure being coated with more stable, improve plating membrane stress bending
Caused uniformity is poor, film layer fragmentation, collapses film, attaches the defects of glue rear demoulding, improves properties of product and yield, further
It ensure that the service life and using effect of film layer.As shown in Fig. 2, at 150 DEG C of temperature, reaction gas hydrogen volume flow is
35sccm plates the Si:H of 120nm by changing different inert sputter gas argon flow in 0.5mm D263 substrate of glass respectively,
It can be found that with the promotion of argon flow, stress in thin film is first reduced and is increased afterwards.It, can be with when therefore, using above-mentioned setting condition
Stress in thin film is greatly reduced, optical filter bending is improved.
In the present embodiment, in step S3, the film layer being coated on substrate b includes that IR band logical film layer and AR long wave lead to film
Layer.IR band logical film layer and AR long wave lead to film layer and are coated on the opposite two sides substrate b respectively.In the present embodiment, IR band logical film
Layer and AR long wave lead to film layer and first refractive index material, the second refraction materials, two kinds in third reflect rate material are respectively adopted
Or three kinds of alternatings are coated with, for example, two kinds of materials can be respectively adopted in the plating prepared material that IR band logical film layer and AR long wave lead to film layer
It is coated with；Alternatively, the plating prepared material that IR band logical film layer and AR long wave lead to film layer can be respectively adopted three kinds of materials and is coated with；Or
Person, IR band logical film layer are coated with using two kinds of materials, and AR long wave is led to film layer and is coated with using three kinds of materials；Or IR band logical film layer uses
Three kinds of materials are coated with, and AR long wave is led to film layer and is coated with using two kinds of materials.When being coated with above-mentioned film layer using two kinds of materials, then two kinds
The combination of material can be first refractive index material and the second refraction materials or first refractive index material and third reflect rate material
Material or third reflect rate material and the second refraction materials, it should be pointed out that third reflect rate material and the second refractive index material
Material is different.When being coated with above-mentioned film layer using three kinds of materials, then the group of three kinds of materials is combined into first refractive index material, second
Refraction materials and third reflect rate material.In the present embodiment, the refractive index of first refractive index material is less than 3, second foldings
The refractive index for penetrating rate material is greater than 3, and the refractive index of third reflect rate material is less than 4.It is pointed out that first refractive index material
Material, the second refraction materials, third reflect rate material are different.In the present embodiment, first refractive index material is five oxidations two
Niobium (Nb2O5), tantalum pentoxide (Ta2O5), titanium dioxide (TiO2), silica (SiO2), zirconium dioxide (ZrO2) nitridation
Two silicon (Si2N), a silicon nitride (SiN), three two silicon (Si of nitridation2N3), silicon nitride (Si3N4) one or more of it is mixed
Close object.Second refraction materials can be silane (Si:H), and substrate uses D263 white glass or AF32 white glass material.It needs
, it is noted that it is antireflective film, i.e. anti-reflection film that AR long wave, which leads to film layer, IR band logical film layer is infrared cut coating.
As shown in figure 3, the logical film layer of a kind of embodiment according to the present utility model, IR band logical film layer and AR long wave is respectively
Multi-layer film structure.In the present embodiment, IR band logical film layer and AR long wave lead to one layer that film layer connect with substrate b respectively and use the
One refraction materials or third reflect rate material are coated with.It is close with incident medium respectively that IR band logical film layer and AR long wave lead to film layer
One layer of use first refractive index material is coated with or third reflect rate material is coated with, and rolls over by using first refractive index material or third
Penetrate rate material, the advantage that adhesive force is outstanding, hardness is high, wearability is good, corrosion resistance is strong, to realize the utility model
Adhesion effect of the plated film on substrate b is good, and intensity is high.
A kind of embodiment according to the present utility model, it is shown in Figure 3, if IR band logical film layer is with five sub- film layers
Multilayered structure, and when IR band logical film layer be coated with using two kinds of materials of first refractive index material and the second refraction materials
When, then first refractive index material is coated on the surface of substrate b first and constitutes the first sub- film layer, the is coated in the first sub- film layer
Two refraction materials constitute the second sub- film layer, and first refractive index material is coated in the second sub- film layer and constitutes the sub- film layer of third,
It is coated with the second refraction materials in the sub- film layer of third and constitutes the 4th sub- film layer, is coated with first refractive index material in the 4th sub- film layer
Constitute the 5th sub- film layer.In the present embodiment, AR long wave lead to film layer to be coated with mode identical with aforesaid way, no longer go to live in the household of one's in-laws on getting married herein
It states.
Another embodiment according to the present utility model, it is shown in Figure 3, if IR band logical film layer is with five sub- films
The multilayered structure of layer, and when IR band logical film layer is to be coated with using two kinds of materials of first refractive index material and third reflect rate material
(it should be pointed out that first refractive index material and third reflect rate material are different, and the refraction of third reflect rate material
Rate is greater than the refractive index of first refractive index material) when, then first refractive index material is coated on the surface of substrate b first and constitutes the
One sub- film layer is coated with third reflect rate material in the first sub- film layer and constitutes the second sub- film layer, the is coated in the second sub- film layer
One refraction materials constitute the sub- film layer of third, and third reflect rate material is coated in the sub- film layer of third and constitutes the 4th sub- film layer,
It is coated with first refractive index material in 4th sub- film layer and constitutes the 5th sub- film layer.In the present embodiment, AR long wave leads to the plating of film layer
Mode processed is identical as aforesaid way, and details are not described herein.
Another embodiment according to the present utility model, it is shown in Figure 3, if IR band logical film layer is with five sub- films
The multilayered structure of layer, and when IR band logical film layer is to be coated with using two kinds of materials of third reflect rate material and the second refraction materials
(it should be pointed out that third reflect rate material and the second refraction materials are different, and the refraction of third reflect rate material
Refractive index of the rate less than the second refraction materials) when, then third reflect rate material is coated on the surface of substrate b first and constitutes the
One sub- film layer is coated with the second refraction materials in the first sub- film layer and constitutes the second sub- film layer, the is coated in the second sub- film layer
Three refraction materials constitute the sub- film layer of third, and the second refraction materials are coated in the sub- film layer of third and constitute the 4th sub- film layer,
It is coated with third reflect rate material in 4th sub- film layer and constitutes the 5th sub- film layer.In the present embodiment, AR long wave leads to the plating of film layer
Mode processed is identical as aforesaid way, and details are not described herein.
Another embodiment according to the present utility model, it is shown in Figure 3, if IR band logical film layer is with five sub- films
The multilayered structure of layer, and when IR band logical film layer is using first refractive index material, the second refraction materials and third reflect rate
Three kinds of materials of material be coated with (it should be pointed out that third reflect rate material and the second refraction materials be it is different, and second
The refractive index of refraction materials is greater than the refractive index of third reflect rate material and first refractive index material) when, then first in substrate b
Surface on be coated with first refractive index material constitute the first sub- film layer, be coated in the first sub- film layer the second refraction materials composition
Second sub- film layer is coated with third reflect rate material in the second sub- film layer and constitutes the sub- film layer of third, is coated in the sub- film layer of third
Second refraction materials constitute the 4th sub- film layer, and first refractive index material is coated in the 4th sub- film layer and constitutes the 5th sub- film layer.
In the present embodiment, what AR long wave led to film layer is coated with that mode is identical as aforesaid way, and details are not described herein.
It is shown in Figure 4, it can be seen that in the finished product characteristic curve that filming equipment according to the present utility model is coated with, pass through this
The film layer that utility model is coated with can satisfy within the scope of the light wave of 350-1200nm, only in the light wave range area of 800-1200nm
Between in specific band there are the passband of a high transmittance, other wave bands are all ended, by degree reach OD2 or more.Therefore,
It by the filming equipment and film plating process of the utility model, may be implemented within the scope of 800-1200nm light wave, the second refractive index material
The refractive index of material is greater than 3.55, and extinction coefficient is less than 0.002；Become to significantly improve infrared narrow band filter with incident angle
Change and cause passband center wavelengths drift value, passband center wavelengths drift value is less than 15nm in 0 ° and 30 ° of incidence angles.
Above content is only the example of the concrete scheme of the utility model, for the equipment and knot of wherein not detailed description
Structure, it should be understood that the existing common apparatus in this field and universal method is taken to be practiced.
The foregoing is merely a schemes of the utility model, are not intended to limit the utility model, for ability
For the technical staff in domain, various modifications and changes may be made to the present invention.It is all the spirit and principles of the utility model it
Interior, any modification, equivalent replacement, improvement and so on should be included within the scope of protection of this utility model.
Claims (6)
1. a kind of filming equipment, including vacuum chamber (1), the target pedestal (11) being arranged in the vacuum chamber (1) and substrate folder
Have (12), the target pedestal (11) is set to the top of the substrate chuck (12)；It is characterized in that, further including electrode switching
Device (13)；
The electrode switching device (13) and the target pedestal (11) are connected with each other, and the target pedestal (11) is even number
It is a.
2. filming equipment according to claim 1, which is characterized in that be provided with linear displacement on the target pedestal (11)
Device；
Along the vertical direction, the linear displacement apparatus drives the target pedestal (11) to move back and forth.
3. filming equipment according to claim 1 or 2, which is characterized in that further include: it is set in the vacuum chamber (1)
It is adjacent with the target pedestal (11) and for providing and enhance target pedestal (11) position plasma motion speed
Radio-frequency signal generator (14), and setting and the vacuum chamber (1) outside and the alternating magnetic field opposite with the target pedestal (11)
Device (19).
4. filming equipment according to claim 3, which is characterized in that further include: be arranged on the vacuum chamber (1) from
Component (15) and air extractor (16), it is described for extracting for being passed through the air inlet pipe (17) of gas in the vacuum chamber (1)
The escape pipe (18) of gas in vacuum chamber (1)；
The air inlet pipe (17) includes the first air inlet pipe (171) for conveying inert gas and for being passed through reaction gas
Two air inlet pipe (172).
5. filming equipment according to claim 4, which is characterized in that the air inlet pipe (17) and the escape pipe (18) phase
To setting.
6. filming equipment according to claim 1, which is characterized in that the electrode switching device (13) is cut for ac electrode
Changing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821256383.9U CN208733216U (en) | 2018-08-06 | 2018-08-06 | A kind of filming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821256383.9U CN208733216U (en) | 2018-08-06 | 2018-08-06 | A kind of filming equipment |
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| Publication Number | Publication Date |
|---|---|
| CN208733216U true CN208733216U (en) | 2019-04-12 |
Family
ID=66028478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821256383.9U Active CN208733216U (en) | 2018-08-06 | 2018-08-06 | A kind of filming equipment |
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| Country | Link |
|---|---|
| CN (1) | CN208733216U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023273A (en) * | 2018-08-06 | 2018-12-18 | 信阳舜宇光学有限公司 | A kind of filming equipment and film plating process |
-
2018
- 2018-08-06 CN CN201821256383.9U patent/CN208733216U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023273A (en) * | 2018-08-06 | 2018-12-18 | 信阳舜宇光学有限公司 | A kind of filming equipment and film plating process |
| CN109023273B (en) * | 2018-08-06 | 2023-08-11 | 信阳舜宇光学有限公司 | Coating equipment and coating method |
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