CN204451390U - Anti reflection glass - Google Patents
Anti reflection glass Download PDFInfo
- Publication number
- CN204451390U CN204451390U CN201420832584.4U CN201420832584U CN204451390U CN 204451390 U CN204451390 U CN 204451390U CN 201420832584 U CN201420832584 U CN 201420832584U CN 204451390 U CN204451390 U CN 204451390U
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- refractive index
- silicon dioxide
- high refractive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
The utility model discloses a kind of take aluminosilicate glass as substrate, visible ray all band mean transmissivity >=94.5%, coated surface one side all band average reflectance≤1%, high rigidity, scratch-resistant, acid and alkali-resistance, anti reflection glass that following process is strong.Anti reflection glass comprises the aluminosilicate glass substrate, the first silicon dioxide layer, the first high refractive index layer, the second silicon dioxide layer, the second high refractive index layer, the 3rd silicon dioxide layer, third high index layer, the 4th silicon dioxide layer, the 4th high refractive index layer, the 5th silicon dioxide layer and the 5th high index of refraction that stack gradually; First high refractive index layer is niobium pentaoxide layer; Second high refractive index layer is niobium pentaoxide layer or silicon nitride layer; Third high index layer is niobium pentaoxide layer or silicon nitride layer.This anti reflection glass coated surface one side all band average reflectance is lower, hardness is higher, is particularly suitable for the soda acid process in aft-loaded airfoil operation, thus adaptation operation is more, the scope of application is wider.
Description
Technical field
It take aluminosilicate glass as substrate, visible ray all band mean transmissivity >=94.5%, coated surface one side all band average reflectance≤1%, high rigidity, scratch-resistant, acid and alkali-resistance, anti reflection glass that following process is strong that the utility model relates to a kind of.
Background technology
Along with intelligent touch mobile phone, dull and stereotyped situation of selling well, increasing people forms the custom using and touch electronic product.Above the screen of touch electronic product, there is cover-plate glass, but because glass has the effect of reverberation, when outdoor solar light or indoor high light are better than the transmitted light of LCD backlight, the reflection ray that each surface of glass can exist about 4.2% reflects into human eye, cause eyes not see displaying contents on screen, affect the use of product.
Existing anti reflection glass glass substrate one side or two-sidedly prepare antireflection layer, thus under outdoor solar light or indoor high light, light reflectance is lower, creates Clear & Transparent visual space, promotes and touches the readability of electronic product in the sun or under high light.
OGS (large stretch of glass processing making technology--the One Glass Solution of capacitance plate technology, be called for short OGS) or TOL (small pieces making technology--Touch On Lens, be called for short TOL), for improving Consumer's Experience further, improve selling point, strengthen with the competitive advantage between other capacitance plate technology, often antireflection film layer is prepared in the front of OGS glass or TOL glass.Now, if first produce OGS or TOL sensor, then antireflection layer is prepared in front, then cross effect because antireflective is anti-reflection, the concealment effect of the shadow effect that disappears of sensor, metal or ITO bridge point is all destroyed, and the ITO lines of result sensor and bridge point can be more obvious, affect the satisfaction of user.Meanwhile, because the BM (dark border--Black Matrix is called for short BM) of OGS or TOL is not often ater, but partially red system or partially blueness usually.In this case, when first having Sensor to prepare anti-reflection layer again, more obviously off-design original idea is incited somebody to action by partially red system or the partially blue system of BM.If first prepare antireflection layer, then prepare functional surfaces, then, in the process in follow-up Sensor face, antireflection layer need clean through multiple tracks, plated film, lithography process.If anti-reflection layer hardness is too low, in Sensor process, anti-reflection layer is often scratched and affects production yield, causes cost to remain high; Meanwhile, need the multiple working procedures such as alkali lye development, acid solution etching, alkali lye demoulding, ultrasonic cleaning in etching process, if antireflection layer not acid and alkali-resistance erosion, then, after Sensor operation, antireflection film layer can be destroyed and do not reached antireflecting object more.
AR film many employings Nb in the market
2o
5or TiO
2as high-index material, SiO
2produce as low-index material, utilize evaporation or magnetron sputtering to produce.For large flake products, evaporation production capacity will be restricted and be difficult to play; And the AR rete that the AR rete that evaporation is produced is difficult to the production of same magnetron sputtering in compactness, hardness is compared.The hardness of AR rete and compactness are had to the product of requirement, the first-selected or magnetron sputtering of production technology.
Adopt TiO
2though the AR rete produced is harder in hardness, TiO
2under UV illumination is penetrated, there will be blackspot, although this blackspot extends and thin out gradually in time, occur again again after UV irradiates, affect the visual effect of product.And Nb
2o
5then be dissolved in alkali lye, top layer adopts Nb
2o
5if AR product ultrasonic with caustic dip, alkali lye in subsequent processing operations, there will be part Nb
2o
5layer dissolution phenomena, destroys optical film, thus destroys the optical effect of antireflective film; Nb simultaneously
2o
5and SiO
2vickers hardness be only 560Hv and 640Hv, if all rete all adopts this bi-material, then the antireflective film generated easily scratches in following process process, in terminal client use procedure, affect the attractive in appearance of product and client's acceptance.
Utility model content
Based on this, be necessary to provide the anti reflection glass that a kind of hardness is higher, scratch-resistant, acid and alkali-resistance, following process are strong.
A kind of anti reflection glass, described anti reflection glass comprises the aluminosilicate glass substrate, the first silicon dioxide layer, the first high refractive index layer, the second silicon dioxide layer, the second high refractive index layer, the 3rd silicon dioxide layer, third high index layer, the 4th silicon dioxide layer, the 4th high refractive index layer, the 5th silicon dioxide layer and the 5th high index of refraction that stack gradually;
Described first high refractive index layer is niobium pentaoxide layer;
Described second high refractive index layer is niobium pentaoxide layer or silicon nitride layer;
Described third high index layer is niobium pentaoxide layer or silicon nitride layer;
Described 4th high refractive index layer is niobium pentaoxide layer or silicon nitride layer;
Described 5th high refractive index layer is silicon nitride layer;
The thickness of described first silicon dioxide layer is
The thickness of described first high refractive index layer is
The thickness of described second silicon dioxide layer is
The thickness of described second high refractive index layer is
The thickness of described 3rd silicon dioxide layer is
The thickness of described third high index layer is
The thickness of described 4th silicon dioxide layer is
The thickness of described 4th high refractive index layer is
The thickness of described 5th silicon dioxide layer is
The thickness of described 5th high refractive index layer is
In one embodiment, the refractive index of described aluminosilicate glass substrate is 1.50 ~ 1.52.
In one embodiment, the thickness of described aluminosilicate glass substrate is 0.33 ~ 1.1mm.
In one embodiment, the thickness of described first silicon dioxide layer is
described first high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is niobium pentaoxide layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
In one embodiment, the thickness of described first silicon dioxide layer is
the thickness of described first high refractive index layer is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is silicon nitride layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
In one embodiment, the thickness of described first silicon dioxide layer is
described first high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is niobium pentaoxide layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
In one embodiment, the thickness of described first silicon dioxide layer is
the thickness of described first high refractive index layer is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is silicon nitride layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
This anti reflection glass, comprise the first silicon dioxide layer, the first high refractive index layer, the second silicon dioxide layer, the second high refractive index layer, the 3rd silicon dioxide layer, third high index layer, the 4th silicon dioxide layer, the 4th high refractive index layer, the 5th silicon dioxide layer and the 5th high refractive index layer, the film layer structure of the suitable thickness that transmitance height combines, makes anti reflection glass anti-reflective effect better; When being applied to electronic product, average reflectance≤1% in coated surface one side visible ray full band range under outdoor solar light or indoor high light; By the combination of the 5th high refractive index layer with at least six tunic layers, both ensure that the optical effect of anti reflection glass, also improve hardness and the acid and alkali-resistance characteristic of AR rete, make AR rete in acid-alkali-corrosive-resisting, be able to obvious improvement, ensure that anti reflection glass has more advantage in durability, rub resistance etc.
Accompanying drawing explanation
Fig. 1 is the structural representation of the anti reflection glass of an embodiment.
Detailed description of the invention
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in detail detailed description of the invention of the present utility model below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the utility model.But the utility model can be much different from alternate manner described here to implement, those skilled in the art can when doing similar improvement without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public concrete enforcement.
An embodiment anti reflection glass 100 as shown in Figure 1, comprises aluminosilicate glass substrate 10, first silicon dioxide layer 20, first high refractive index layer 30, second silicon dioxide layer 40, second high refractive index layer 50, the 3rd silicon dioxide layer 60, third high index layer 70, the 4th silicon dioxide layer 80, the 4th high refractive index layer 85, the 5th silicon dioxide layer 90 and the 5th high refractive index layer 95 that stack gradually.
Preferably, the thickness of aluminosilicate glass substrate 10 is 0.4 ~ 0.7mm.
Preferably, the refractive index of aluminosilicate glass substrate 10 is 1.50 ~ 1.52.
The material of the first silicon dioxide layer 20 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the first silicon dioxide layer 20, make the transmitance of the first silicon dioxide layer 20 relatively high.
The thickness of the first silicon dioxide layer 20 is
in one particular embodiment, the thickness of the first silicon dioxide layer 20 is
that is, the first silicon dioxide layer 20 can omit.
First high refractive index layer 30 is niobium pentaoxide layer.Niobium pentaoxide (Nb
2o
5) refractive index be 2.3.Adopt niobium pentaoxide layer as the first high refractive index layer 30, make the transmitance of the first high refractive index layer 30 relatively low.
The thickness of the first high refractive index layer 30 can be
in one particular embodiment, the thickness of the first high refractive index layer 30 is
that is, the first high refractive index layer 30 can omit.
The material of the second silicon dioxide layer 40 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the second silicon dioxide layer 40, make the transmitance of the second silicon dioxide layer 40 relatively high.
The thickness of the second silicon dioxide layer 40 is
in one particular embodiment, the thickness of the second silicon dioxide layer 40 is
that is, the second silicon dioxide layer 40 can omit.
Second high refractive index layer 50 is niobium pentaoxide layer or silicon nitride layer.Nb
2o
5refractive index be 2.3, silicon nitride (Si
3n
4) refractive index be 2.0.Adopt niobium pentaoxide layer or silicon nitride layer as the second high refractive index layer 50, make the transmitance of the second high refractive index layer 50 relatively low.
The thickness of the second high refractive index layer 50 is
in one particular embodiment, the thickness of the second high refractive index layer 50 is
that is, the second high refractive index layer 50 can omit.
The material of the 3rd silicon dioxide layer 60 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 3rd silicon dioxide layer 60, make the transmitance of the 3rd silicon dioxide layer 60 relatively high.
The thickness of the 3rd silicon dioxide layer 60 is
Third high index layer 70 is niobium pentaoxide layer or silicon nitride layer.Nb
2o
5refractive index be 2.3, Si
3n
4refractive index be 2.0.Be adopted as niobium pentaoxide layer or silicon nitride layer as third high index layer 70, make the transmitance of third high index layer 70 relatively low.
The thickness of third high index layer 70 is
The material of the 4th silicon dioxide layer 80 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 4th silicon dioxide layer 80, make the transmitance of the 4th silicon dioxide layer 80 relatively high.
The thickness of the 4th silicon dioxide layer 80 is
4th high refractive index layer 85 is niobium pentaoxide layer or silicon nitride layer.Nb
2o
5refractive index be 2.3, Si
3n
4refractive index be 2.0.Be adopted as niobium pentaoxide layer or silicon nitride layer as the 4th high refractive index layer 85, make the transmitance of the 4th high refractive index layer 85 relatively low.
The thickness of the 4th high refractive index layer 85 is
The material of the 5th silicon dioxide layer 90 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 5th silicon dioxide layer 90, make the transmitance of the 5th silicon dioxide layer 90 relatively high.
The thickness of the 5th silicon dioxide layer 90 is
5th high refractive index layer 95 is silicon nitride layer.Si
3n
4refractive index be 2.0.Adopt silicon nitride layer as outermost layer, make the transmitance of the 5th high refractive index layer 95 lower relative to the 5th silicon dioxide layer 90.
The thickness of the 5th high refractive index layer 95 is
This anti reflection glass, comprise the first silicon dioxide layer 20, first high refractive index layer 30, second silicon dioxide layer 40, second high refractive index layer 50, the 3rd silicon dioxide layer 60, third high index layer 70, the 4th silicon dioxide layer 80, the 4th high refractive index layer 85, the 5th silicon dioxide layer 90 and the 5th high refractive index layer 95, the film layer structure of the suitable thickness that transmitance height combines, makes anti reflection glass anti-reflective effect better; When being applied to electronic product, all band average reflectance≤1% in coated surface one side visible-range under outdoor solar light or indoor high light.By the combination of the 5th high refractive index layer with at least six tunic layers, both ensure that the optical effect of anti reflection glass, the Vickers hardness of silicon nitride is 1720Hv and acid-alkali-corrosive-resisting simultaneously, thus improve hardness and the acid-proof alkaline of AR rete, make AR rete in acid-alkali-corrosive-resisting, be able to obvious improvement, ensure that anti reflection glass has more advantage in durability, rub resistance etc.
The preparation method of above-mentioned anti reflection glass, comprises the steps:
S10, provide aluminosilicate glass substrate 10.
Preferably, the thickness of aluminosilicate glass substrate 10 is 0.4 ~ 0.7mm.
Preferably, the refractive index of aluminosilicate glass substrate 10 is 1.50 ~ 1.52.
Preferably, first cleaning is carried out and drying to aluminosilicate glass substrate 10.
S20, by cleaning after aluminosilicate glass substrate 10 surface magnetron sputtering deposition first silicon dioxide layer 20, first high refractive index layer 30, second silicon dioxide layer 40, second high refractive index layer 50, the 3rd silicon dioxide layer 60, third high index layer 70, the 4th silicon dioxide layer 80, the 4th high refractive index layer 85, the 5th silicon dioxide layer 90 and the 5th high refractive index layer 95 successively, obtain anti reflection glass.
The material of the first silicon dioxide layer 20 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the first silicon dioxide layer 20, make the transmitance of the first silicon dioxide layer 20 relatively high.
The thickness of the first silicon dioxide layer 20
in one particular embodiment, the thickness of the first silicon dioxide layer 20 is
that is, the first silicon dioxide layer 20 can omit.
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the first silicon dioxide layer 20 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 0 ~ 60Kw.
The material of the first high refractive index layer 30 is Nb
2o
5.Nb
2o
5refractive index be 2.3.Adopt Nb
2o
5as the material of the first high refractive index layer 30, make the transmitance of the first high refractive index layer 30 relatively low.
The thickness of the first high refractive index layer 30 can be
in one particular embodiment, the thickness of the first high refractive index layer 30 is
that is, the first high refractive index layer 30 can omit.
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the first high refractive index layer 30 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 0 ~ 40Kw.
The material of the second silicon dioxide layer 40 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the second silicon dioxide layer 40, make the transmitance of the second silicon dioxide layer 40 relatively high.
The thickness of the second silicon dioxide layer 40 is
in one particular embodiment, the thickness of the second silicon dioxide layer 40 is
that is, the second silicon dioxide layer 40 can omit.
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the second silicon dioxide layer 40 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 0 ~ 20Kw.
The material of the second high refractive index layer 50 is Nb
2o
5or Si
3n
4.Nb
2o
5refractive index be 2.3, Si
3n
4refractive index be 2.0.Adopt Nb
2o
5or Si
3n
4as the material of the second high refractive index layer 50, make the transmitance of the second high refractive index layer 50 relatively low.
The thickness of the second high refractive index layer 50 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the second high refractive index layer 50 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 0 ~ 20Kw.
The material of the 3rd silicon dioxide layer 60 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 3rd silicon dioxide layer 60, make the transmitance of the 3rd silicon dioxide layer 60 relatively high.
The thickness of the 3rd silicon dioxide layer 60 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the 3rd silicon dioxide layer 60 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 4 ~ 40Kw.
The material of third high index layer 70 is Nb
2o
5or Si
3n
4.Nb
2o
5refractive index be 2.3, Si
3n
4refractive index be 2.0.Adopt Nb
2o
5or Si
3n
4as the material of third high index layer 70, make the transmitance of third high index layer 70 relatively low.
The thickness of third high index layer 70 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares third high index layer 70 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 4 ~ 60Kw.
The material of the 4th silicon dioxide layer 80 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 4th silicon dioxide layer 80, make the transmitance of the 4th silicon dioxide layer 80 relatively high.
The thickness of the 4th silicon dioxide layer 80 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the 4th silicon dioxide layer 80 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 4 ~ 15Kw.
The material of the 4th high refractive index layer 85 is Nb
2o
5or Si
3n
4.Nb
2o
5refractive index be 2.3, Si
3n
4refractive index be 2.0.Adopt Nb
2o
5or Si
3n
4as the material of the 4th high refractive index layer 85, make the transmitance of the 4th high refractive index layer 85 relatively low.
The thickness of the 4th high refractive index layer 85 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the 4th high refractive index layer 85 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 4 ~ 80Kw.
The material of the 5th silicon dioxide layer 90 is SiO
2.SiO
2refractive index be 1.48.Adopt SiO
2as the material of the 5th silicon dioxide layer 90, make the transmitance of the 5th silicon dioxide layer 90 relatively high.
The thickness of the 5th silicon dioxide layer 90 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the 5th silicon dioxide layer 90 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 8 ~ 20Kw.
The material of the 5th high refractive index layer 95 is Si
3n
4.Si
3n
4refractive index be 2.0.Adopt Si
3n
4as outermost material, make the transmitance of the 5th high refractive index layer 95 lower relative to the 5th silicon dioxide layer 90.
The thickness of the 5th high refractive index layer 95 is
Specifically in the present embodiment, the parameter that magnetron sputtering prepares the 5th high refractive index layer 95 is: background vacuum is 0.1 ~ 0.005Pa, and the vacuum in plated film chamber is 0.1Pa ~ 0.5Pa, and power is 2 ~ 30Kw.
The preparation method of above-mentioned anti reflection glass, technique is simple; The anti reflection glass of preparation, anti-reflective effect is better, hardness is higher, acid-alkali-corrosive-resisting, and following process is stronger.
Be specific embodiment below.
Embodiment 1
The structure of the anti reflection glass of embodiment 1 is glass substrate/SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Si
3n
4 wherein, "/" presentation layer stack structure, the numerical value representative thickness in bracket, following examples are identical.
The material of the glass substrate of embodiment 1 is aluminosilicate glass, and thickness is 0.7mm.
The anti reflection glass of embodiment 1 is that 380 ~ 780nm visible-range measures its all band transmitance and reflectivity by using the SD-6000 of Japanese electric look to wavelength, records mean transmissivity >=94.5%, coated surface one side average reflectance≤1%.
Use pencil hardometer to carry out hardness test to this anti reflection glass, result hardness is 7H.
Get this anti reflection glass of some, employing concentration be 10wt%, NaOH solution that temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, adopt the HCl solution that concentration is 5%, temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, employing concentration is 5wt%, NaOH solution that temperature is 50 DEG C, frequency be 40Hz, ultrasonic tank that power is 1500W is ultrasonic, ultrasonic 20 minutes.Test the spectrum of ultrasonic rear print, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Embodiment 2
The structure of the anti reflection glass of embodiment 2 is glass substrate/Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Si
3n
4
The material of the glass substrate of embodiment 1 is aluminosilicate glass, and thickness is 1.1mm.
The anti reflection glass of embodiment 2 is that 380 ~ 780nm visible-range measures its all band transmitance and reflectivity by using the SD-6000 of Japanese electric look to wavelength, records mean transmissivity >=94.5%, coated surface one side average reflectance≤1%.
Use pencil hardometer to carry out hardness test to this anti reflection glass antireflection film layer, result hardness is 7H.
Get this anti reflection glass of some, employing concentration be 10wt%, NaOH solution that temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, adopt the HCl solution that concentration is 5%, temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, employing concentration is 5wt%, NaOH solution that temperature is 50 DEG C, frequency be 40Hz, ultrasonic tank that power is 1500W is ultrasonic, ultrasonic 20 minutes.Test the spectrum of ultrasonic rear print, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Embodiment 3
The structure of the anti reflection glass of embodiment 3 is glass substrate/SiO
2 / Nb
2o
5 / SiO
2 / Si
3n
4 / SiO
2 / Nb
2o
5 / SiO
2 / Si
3n
4
The material of the glass substrate of embodiment 3 is aluminosilicate glass, and thickness is 0.7mm.
The anti reflection glass of embodiment 3 is that 380 ~ 780nm visible-range measures its all band transmitance and reflectivity by using the SD-6000 of Japanese electric look to wavelength, records mean transmissivity >=94.5%, coated surface one side average reflectance≤1%.
Use pencil hardometer to carry out hardness test to this anti reflection glass antireflection film layer, result hardness is 7H.
Get this anti reflection glass of some, employing concentration be 10wt%, NaOH solution that temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, adopt the HCl solution that concentration is 5%, temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, employing concentration is 5wt%, NaOH solution that temperature is 50 DEG C, frequency be 40Hz, ultrasonic tank that power is 1500W is ultrasonic, ultrasonic 20 minutes.Test the spectrum of ultrasonic rear print, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Embodiment 4
The structure of the anti reflection glass of embodiment 4 is glass substrate/Nb
2o
5 / SiO
2 / Si
3n
4 / SiO
2 / Nb
2o
5 / SiO
2 / Si
3n
4
The material of the glass substrate of embodiment 4 is aluminosilicate glass, and thickness is 0.55mm.
The anti reflection glass of embodiment 4 is that 380 ~ 780nm visible-range measures its all band transmitance and reflectivity by using the SD-6000 of Japanese electric look to wavelength, records mean transmissivity >=94.5%, coated surface one side average reflectance≤1%.
Use pencil hardometer to carry out hardness test to this anti reflection glass antireflection film layer, result hardness is 7H.
Get this anti reflection glass of some, employing concentration be 10wt%, NaOH solution that temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, adopt the HCl solution that concentration is 5%, temperature is 40 DEG C, soak 2H.The spectrum of the print after test immersion, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Get this anti reflection glass of some, employing concentration is 5wt%, NaOH solution that temperature is 50 DEG C, frequency be 40Hz, ultrasonic tank that power is 1500W is ultrasonic, ultrasonic 20 minutes.Test the spectrum of ultrasonic rear print, compare with spectrum before immersion, registration is very good; Test hundred lattice, adhesive force is still 5B.
Comparative example
The structure of the anti reflection glass of comparative example 1 is glass substrate Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 / Nb
2o
5 / SiO
2 obtain anti reflection glass.
The material of the glass substrate of comparative example 1 is aluminosilicate glass, and thickness is 0.7mm.
The anti reflection glass of comparative example 1 is by using the SD-6000 that tester is the electric look of Japan, and visible-range measures its all band transmitance and reflectivity, records mean transmissivity >=94.5%, coated surface one side average reflectance≤1%.
Use pencil hardometer to carry out hardness test to this this anti reflection glass antireflection film layer, result hardness is 4H.
Get this anti reflection glass of some, employing concentration be 10wt%, NaOH solution that temperature is 40 DEG C, soak 1H.The spectrum of the print after test immersion, compare with spectrum before immersion, reflectivity is deteriorated; Test hundred lattice, portion there is point-like or sheet falls film phenomenon, and full wafer glass exists the inconsistent aberration phenomenon of heavier color.
Get this anti reflection glass of some, employing concentration is 5wt%, NaOH solution that temperature is 50 DEG C, frequency be 40Hz, ultrasonic tank that power is 1500W is ultrasonic, ultrasonic 10 minutes.Observe this print, possessing position and there is point-like or sheet falls film, there is the inconsistent aberration phenomenon caused of heavier color in full wafer glass.
The above embodiment only have expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (7)
1. an anti reflection glass, it is characterized in that, described anti reflection glass comprises the aluminosilicate glass substrate, the first silicon dioxide layer, the first high refractive index layer, the second silicon dioxide layer, the second high refractive index layer, the 3rd silicon dioxide layer, third high index layer, the 4th silicon dioxide layer, the 4th high refractive index layer, the 5th silicon dioxide layer and the 5th high index of refraction that stack gradually;
Described first high refractive index layer is niobium pentaoxide layer;
Described second high refractive index layer is niobium pentaoxide layer or silicon nitride layer;
Described third high index layer is niobium pentaoxide layer or silicon nitride layer;
Described 4th high refractive index layer is niobium pentaoxide layer or silicon nitride layer;
Described 5th high refractive index layer is silicon nitride layer;
The thickness of described first silicon dioxide layer is
The thickness of described first high refractive index layer is
The thickness of described second silicon dioxide layer is
The thickness of described second high refractive index layer is
The thickness of described 3rd silicon dioxide layer is
The thickness of described third high index layer is
The thickness of described 4th silicon dioxide layer is
The thickness of described 4th high refractive index layer is
The thickness of described 5th silicon dioxide layer is
The thickness of described 5th high refractive index layer is
2. anti reflection glass according to claim 1, is characterized in that, the refractive index of described aluminosilicate glass substrate is 1.50 ~ 1.52.
3. anti reflection glass according to claim 1, is characterized in that, the thickness of described aluminosilicate glass substrate is 0.33 ~ 1.1mm.
4. anti reflection glass according to claim 1, is characterized in that, the thickness of described first silicon dioxide layer is
described first high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is niobium pentaoxide layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
5. anti reflection glass according to claim 1, is characterized in that, the thickness of described first silicon dioxide layer is
the thickness of described first high refractive index layer is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is silicon nitride layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
6. anti reflection glass according to claim 1, is characterized in that, the thickness of described first silicon dioxide layer is
described first high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is niobium pentaoxide layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
7. anti reflection glass according to claim 1, is characterized in that, the thickness of described first silicon dioxide layer is
the thickness of described first high refractive index layer is
the thickness of described second silicon dioxide layer is
described second high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 3rd silicon dioxide layer is
described third high index layer is silicon nitride layer, and thickness is
the thickness of described 4th silicon dioxide layer is
described 4th high refractive index layer is niobium pentaoxide layer, and thickness is
the thickness of described 5th silicon dioxide layer is
the thickness of described 5th high refractive index layer is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832584.4U CN204451390U (en) | 2014-12-24 | 2014-12-24 | Anti reflection glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832584.4U CN204451390U (en) | 2014-12-24 | 2014-12-24 | Anti reflection glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204451390U true CN204451390U (en) | 2015-07-08 |
Family
ID=53658330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420832584.4U Active CN204451390U (en) | 2014-12-24 | 2014-12-24 | Anti reflection glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204451390U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104553126A (en) * | 2014-12-24 | 2015-04-29 | 宜昌南玻显示器件有限公司 | Antireflection glass and preparation method thereof |
| CN107703567A (en) * | 2017-11-06 | 2018-02-16 | 广东弘景光电科技股份有限公司 | High rigidity antireflective plated film lens |
| CN110484878A (en) * | 2018-05-15 | 2019-11-22 | 蓝思科技（长沙）有限公司 | Light gold coating Logo and preparation method thereof for nonmetallic cover board |
| CN111362588A (en) * | 2018-12-25 | 2020-07-03 | 深圳市三鑫精美特玻璃有限公司 | AR glass with ultraviolet-proof function and production process thereof |
| US20200408954A1 (en) * | 2018-03-02 | 2020-12-31 | Corning Incorporated | Anti-reflective coatings and articles and methods of forming the same |
| CN114740553A (en) * | 2022-05-25 | 2022-07-12 | 江苏日久光电股份有限公司 | Large-viewing-angle anti-reflection composite film, display assembly and display device |
-
2014
- 2014-12-24 CN CN201420832584.4U patent/CN204451390U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104553126A (en) * | 2014-12-24 | 2015-04-29 | 宜昌南玻显示器件有限公司 | Antireflection glass and preparation method thereof |
| CN107703567A (en) * | 2017-11-06 | 2018-02-16 | 广东弘景光电科技股份有限公司 | High rigidity antireflective plated film lens |
| CN107703567B (en) * | 2017-11-06 | 2024-05-03 | 广东弘景光电科技股份有限公司 | High-hardness antireflection coated lens |
| US20200408954A1 (en) * | 2018-03-02 | 2020-12-31 | Corning Incorporated | Anti-reflective coatings and articles and methods of forming the same |
| CN110484878A (en) * | 2018-05-15 | 2019-11-22 | 蓝思科技（长沙）有限公司 | Light gold coating Logo and preparation method thereof for nonmetallic cover board |
| CN110484878B (en) * | 2018-05-15 | 2022-03-29 | 蓝思科技（长沙）有限公司 | Light golden coating Logo for non-metallic cover plate and preparation method thereof |
| CN111362588A (en) * | 2018-12-25 | 2020-07-03 | 深圳市三鑫精美特玻璃有限公司 | AR glass with ultraviolet-proof function and production process thereof |
| CN114740553A (en) * | 2022-05-25 | 2022-07-12 | 江苏日久光电股份有限公司 | Large-viewing-angle anti-reflection composite film, display assembly and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104553126B (en) | Anti reflection glass and preparation method thereof | |
| CN204451390U (en) | Anti reflection glass | |
| JP6133277B2 (en) | Substrate elements for coating with easy clean coating | |
| CN102922825B (en) | Aid-base resistance anti-reflection coated glass | |
| CN102909918A (en) | Two-side coated glass and preparation method thereof | |
| CN102511023A (en) | Transparent conducting film and touch panel | |
| KR101049182B1 (en) | Transparent conductive substrate for touch panel and manufacturing method thereof | |
| CN104281303B (en) | A kind of display device, touch screen and its manufacturing method | |
| CN102152563B (en) | Transparent conductive material | |
| CN204894653U (en) | Antireflection coating and subtract reflection glass | |
| CN201309893Y (en) | Transparent conductive glass for high transmittance touch screen | |
| CN202037947U (en) | Transparent conducting material | |
| CN204256704U (en) | Touch-screen | |
| CN103934756B (en) | The processing technology of glare proof glass | |
| CN102837467B (en) | Transparent conductive film glass and preparation method thereof | |
| CN104691040B (en) | Antireflective coating, its preparation method and anti reflection glass | |
| CN104527165B (en) | Half-reflection and half-transmission glass and preparation method thereof | |
| CN204451388U (en) | Half-reflection and half-transmission glass | |
| CN116282942A (en) | Anti-glare glass, preparation method, application, display device and electronic equipment | |
| CN113354301A (en) | Antireflection and anti-reflection glass, preparation method, application, display device and electronic equipment | |
| CN203032032U (en) | ITO (indium tin oxide) glass for capacitive touch screen | |
| CN107601919A (en) | A kind of anti-reflection preparation method penetrated with anti reflection glass | |
| CN108473367B (en) | Coated glass with window area and preparation method thereof | |
| CN106484193A (en) | A kind of capacitive touch screen | |
| CN104176947B (en) | ITO electro-conductive glass and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |