CN109655954A - Optical filter and preparation method thereof, fingerprint recognition mould group and electronic equipment - Google Patents
Optical filter and preparation method thereof, fingerprint recognition mould group and electronic equipment Download PDFInfo
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- CN109655954A CN109655954A CN201910165758.3A CN201910165758A CN109655954A CN 109655954 A CN109655954 A CN 109655954A CN 201910165758 A CN201910165758 A CN 201910165758A CN 109655954 A CN109655954 A CN 109655954A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000012528 membrane Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 69
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 27
- 229910000077 silane Inorganic materials 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000005304 optical glass Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 87
- 230000003595 spectral effect Effects 0.000 abstract description 31
- 238000002834 transmittance Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000012788 optical film Substances 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 18
- 229910052681 coesite Inorganic materials 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 15
- 229910052682 stishovite Inorganic materials 0.000 description 15
- 229910052905 tridymite Inorganic materials 0.000 description 15
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000747 cardiac effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Optical Filters (AREA)
Abstract
The present invention provides a kind of optical filter and preparation method thereof, fingerprint recognition mould group and electronic equipments, are related to optical film technology field, which includes that transparent substrates and the logical membrane system of the first long wave for being separately positioned on transparent substrates two sides and the second long wave lead to membrane system；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and intermediate zone central wavelength is 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, and intermediate zone central wavelength is 780-900nm；Wherein, H corresponds to high refractive index layer, and L corresponds to low-index film.The optical filter has high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage, the passband of the spectral coverage optical filter and the characteristic of rejection zone is considerably improved, so as to meet the requirement of fingerprint sensor mould group.
Description
Technical field
The present invention relates to optical film technology fields, more particularly, to a kind of optical filter and preparation method thereof, fingerprint recognition
Mould group and electronic equipment.
Background technique
At present in the fingerprint sensor mould group of the electronic products such as mobile phone, need a kind of to meet optical filter claimed below:
(1) there is high transmittance in 830-950nm spectral coverage；
(2) have the function of inhibiting optical signal in 300-750nm spectral coverage, to reduce the influence of signal noise；
(3) it is placed for a long time in the environment of low temperature (- 40 DEG C), high temperature (+85 DEG C), high humidity (90%) and cold cycling variation
It still can be used afterwards；
(4) substrate thickness is small (< 0.3mm), to meet the integrally-built micromation requirement of mould group；
(5) it is rubbed under (pressure < 5N) repeatedly in slight external force, film layer is not damaged；
(6) in the case where alcohol ether mixed liquor (alcohol: ether=1:2) is slightly wiped repeatedly, film layer is not damaged；
(7) impregnate 2 hours or more high temperature pure water (> 95 DEG C) is inner, membrane (using CT-18 adhesive tape) afterwards film layer without falling off.
However do not have has high transmittance in 830-950nm spectral coverage in the prior art, while at wide section of 300-750nm spectral coverage
Near infrared filter only, the requirement being unable to satisfy in fingerprint sensor mould group.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of optical filter and preparation method thereof, fingerprint recognition mould group and electricity
Sub- equipment, to realize that optical filter has high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage.
In a first aspect, the embodiment of the invention provides a kind of optical filter, including transparent substrates and it is separately positioned on described
First long wave of transparent substrates two sides leads to membrane system and the second long wave leads to membrane system；
First long wave lead to membrane system and second long wave and lead to membrane system include alternately the high refractive index layer of superposition and
Low-index film；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and first long wave leads to film
The intermediate zone central wavelength of system is 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14,
The intermediate zone central wavelength that second long wave leads to membrane system is 780-900nm；Wherein, H corresponds to the high refractive index layer, and L pairs
Answer the low-index film.
With reference to first aspect, the embodiment of the invention provides the first possible embodiments of first aspect, wherein institute
The material for stating high refractive index layer includes silane or silicon nitride.
With reference to first aspect, the embodiment of the invention provides second of possible embodiments of first aspect, wherein institute
The material for stating low-index film includes silica.
With reference to first aspect, the embodiment of the invention provides the third possible embodiments of first aspect, wherein institute
The material for stating transparent substrates includes glass, quartz, sapphire or silicate optical glass.
The third possible embodiment with reference to first aspect, the embodiment of the invention provides the 4th kind of first aspect
Possible embodiment, wherein the depth of parallelism of the transparent substrates is less than 30 ".
Second aspect, the embodiment of the present invention also provide a kind of preparation method of optical filter, comprising:
The first long wave is respectively formed in the two sides of transparent substrates and leads to membrane system and the logical membrane system of the second long wave, obtains optical filter；
Wherein, first long wave leads to membrane system and the logical membrane system of second long wave includes the high refractive index film of alternately superposition
Layer and low-index film；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, first long wave
The intermediate zone central wavelength of logical membrane system is 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H)
^14, the intermediate zone central wavelength that second long wave leads to membrane system is 780-900nm；Wherein, H corresponds to the high refractive index layer,
L corresponds to the low-index film.
In conjunction with second aspect, the embodiment of the invention provides the first possible embodiments of second aspect, wherein institute
Stating high refractive index layer includes silane film layer, and the low-index film includes membranous layer of silicon oxide；
The two sides in transparent substrates are respectively formed the first long wave and lead to membrane system and the logical membrane system of the second long wave, comprising:
By magnetron sputtering technique and silicon target, the first long wave described in the layer-by-layer alternating deposit in the side of the transparent substrates is logical
Silane film layer and membranous layer of silicon oxide in membrane system, and second described in the layer-by-layer alternating deposit in the other side of the transparent substrates
Long wave leads to silane film layer and membranous layer of silicon oxide in membrane system.
In conjunction with the first possible embodiment of second aspect, the embodiment of the invention provides second of second aspect
Possible embodiment, wherein the sputtering rate of the silane film layer is 0.1-1.0nm/s, and the membranous layer of silicon oxide splashes
Firing rate degree is 0.5-1.5nm/s.
The third aspect, the embodiment of the present invention also provides a kind of fingerprint recognition mould group, including as described in above-mentioned first aspect
Optical filter.
Fourth aspect, the embodiment of the present invention also provide a kind of electronic equipment, including the fingerprint as described in the above-mentioned third aspect
Identify mould group.
The embodiment of the present invention bring it is following the utility model has the advantages that
In the embodiment of the present invention, optical filter includes transparent substrates and the first long wave for being separately positioned on transparent substrates two sides
Logical membrane system and the second long wave lead to membrane system；First long wave leads to membrane system and the logical membrane system of the second long wave includes the high refractive index of alternately superposition
Film layer and low-index film；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and the first long wave leads to membrane system
Intermediate zone central wavelength be 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, and second is long
The intermediate zone central wavelength that wave leads to membrane system is 780-900nm；Wherein, H corresponds to high refractive index layer, and L corresponds to low-index film.
The optical filter has high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage, considerably improving the spectrum
The section passband of optical filter and the characteristic of rejection zone, so as to meet the requirement of fingerprint sensor mould group.
Other features and advantages of the present invention will illustrate in the following description, also, partly become from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention are in specification and attached drawing
Specifically noted structure is achieved and obtained.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of optical filter provided in an embodiment of the present invention；
Fig. 2 is the theoretical transmission spectrogram that a kind of first long wave provided in an embodiment of the present invention leads to membrane system；
Fig. 3 is the theoretical transmission spectrogram that a kind of second long wave provided in an embodiment of the present invention leads to membrane system；
Fig. 4 is a kind of transmitted light spectrogram of optical filter provided in an embodiment of the present invention；
Fig. 5 is a kind of flow diagram of the preparation method of optical filter provided in an embodiment of the present invention.
Icon:
100- transparent substrates；The first long wave of 200- leads to membrane system；The second long wave of 300- leads to membrane system；401- high refractive index layer；
402- low-index film.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with attached drawing to the present invention
Technical solution be clearly and completely described, it is clear that described embodiments are some of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Current existing optical filter is only capable of accomplishing there is high transmittance in 830-950nm spectral coverage, cannot accomplish simultaneously
300-750nm spectral coverage has the function of inhibiting optical signal, the requirement being unable to satisfy in fingerprint sensor mould group.It is based on
This, a kind of optical filter provided in an embodiment of the present invention and preparation method thereof, fingerprint recognition mould group and electronic equipment may be implemented to filter
Mating plate has high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage.
To be carried out first to a kind of optical filter disclosed in the embodiment of the present invention detailed convenient for understanding the present embodiment
It introduces.
Embodiment one:
The embodiment of the invention provides a kind of optical filter, which is that 830-950nm penetrates near infrared filter.Fig. 1
For a kind of structural schematic diagram of optical filter provided in an embodiment of the present invention, as shown in Figure 1, the optical filter includes transparent substrates 100
And it is separately positioned on the logical membrane system 200 of the first long wave and the logical membrane system 300 of the second long wave of 100 two sides of transparent substrates；First long wave
It includes the high refractive index layer 401 and low-index film 402 being alternately superimposed that logical membrane system 200 and the second long wave, which lead to membrane system 300,；
The film structure that first long wave leads to membrane system 200 includes (0.5HL0.5H) ^10, and the first long wave leads to cardiac wave in the intermediate zone of membrane system 200
A length of 700-900nm；The film structure that second long wave leads to membrane system 300 includes (0.5HL0.5H) ^14, and the second long wave leads to membrane system 300
Intermediate zone central wavelength be 780-900nm；Wherein, H corresponds to high refractive index layer 401, and L corresponds to low-index film 402.
Optionally, the material of transparent substrates 100 includes glass, quartz, sapphire or silicate optical glass.For example, thoroughly
Bright substrate 100 is substrate of glass.
Still optionally further, the depth of parallelism of transparent substrates 100 is less than 30 ".
Still optionally further, the size of transparent substrates 100 are as follows: long 77mm, width 77mm, thickness 0.21mm.
Optionally, the material of high refractive index layer 401 includes silane or silicon nitride.For example, high refractive index layer 401 is
Silane film layer.
Optionally, the material of low-index film 402 includes silica.
Optionally, it is 785nm that the first long wave, which leads to the central wavelength of membrane system 200, and the second long wave leads to the central wavelength of membrane system 300
For 820nm.
It is alternatively possible to by the way that reasonable intermediate zone central wavelength is arranged, using such as Macleod software to the first long wave
The film structure that logical membrane system 200 and the second long wave lead to membrane system 300 optimizes.
In the embodiment of the present invention, optical filter includes transparent substrates and the first long wave for being separately positioned on transparent substrates two sides
Logical membrane system and the second long wave lead to membrane system；First long wave leads to membrane system and the logical membrane system of the second long wave includes the high refractive index of alternately superposition
Film layer and low-index film；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and the first long wave leads to membrane system
Intermediate zone central wavelength be 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, and second is long
The intermediate zone central wavelength that wave leads to membrane system is 780-900nm；Wherein, H corresponds to high refractive index layer, and L corresponds to low-index film.
The optical filter has high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage, considerably improving the spectrum
The section passband of optical filter and the characteristic of rejection zone, so as to meet the requirement of fingerprint sensor mould group.
In some possible embodiments, above-mentioned optical filter includes that substrate of glass, the first long wave of substrate of glass side are logical
Second long wave of membrane system and the substrate of glass other side leads to membrane system；The long 77mm of substrate of glass, width 77mm, thickness 0.21mm, substrate of glass
Depth of parallelism < 30 ".
Specifically, the first long wave leads to silane (SiH) film layer and silica (SiO that membrane system includes alternately superposition2) film layer,
Film structure is (0.5HL0.5H) ^10, and intermediate zone central wavelength is 785nm, wherein H corresponds to layer of hydrogenated, and 0.5H indicates hydrogen
SiClx layer with a thickness of 0.5 basic thickness, L corresponds to silicon oxide layer, L indicate silicon oxide layer with a thickness of 1 basic thickness, 10
For the periodicity of basic membrane stack (0.5HL0.5H).
Second long wave leads to silane (SiH) film layer and silica (SiO that membrane system includes alternately superposition2) film layer, membrane system knot
Structure is (0.5HL0.5H) ^14, and intermediate zone central wavelength is 820nm, wherein H corresponds to layer of hydrogenated, and 0.5H indicates layer of hydrogenated
With a thickness of 0.5 basic thickness, L corresponds to silicon oxide layer, and indicate silicon oxide layer is basic with a thickness of 1 basic thickness, 14
The periodicity of membrane stack (0.5HL0.5H).The corresponding basic thickness of 1 H or 1 L represents the film layer to be had in reference wave strong point
1/4 optical thickness.Wherein, the reference wavelength that the first long wave leads to membrane system can be 600nm, and the second long wave leads to the reference wavelength of membrane system
It can be 630nm.
It is optimized using the structure that Macleod software leads to membrane system to above-mentioned first long wave, intermediate zone central wavelength is
785nm, each parameters of film that the first obtained long wave leads to membrane system are as shown in table 1 below；The film deposition that wherein number of plies is 1 is in glass
In substrate, the innermost layer of membrane system is led to for the first long wave；The film layer that the number of plies is 22 is the outermost layer that the first long wave leads to membrane system.
Table 1
The theoretical transmission spectrum that the first long wave leads to membrane system can be obtained by being analyzed using Macleod software data in table 1, such as
Shown in Fig. 2, the results showed that the first long wave leads to membrane system in the wide cut-off of 300-730nm spectral coverage, has high transmission in 800-950nm spectral coverage
Rate.
It being optimized using the structure that Macleod software leads to membrane system to the second long wave, intermediate zone central wavelength is 820nm,
Each parameters of film that obtained long wave leads to membrane system is as shown in table 2 below；Wherein the number of plies be 1 film deposition on the glass substrate, be
Second long wave leads to the innermost layer of membrane system；The film layer that the number of plies is 30 is the outermost layer that the second long wave leads to membrane system.
Table 2
| The number of plies | Film material | Film material refractive index | Film layer physical thickness/nm |
| 1 | SiH | 3.44 | 22.36 |
| 2 | SiO2 | 1.46 | 82.98 |
| 3 | SiH | 3.44 | 46.99 |
| 4 | SiO2 | 1.46 | 93.46 |
| 5 | SiH | 3.44 | 40.59 |
| 6 | SiO2 | 1.46 | 97.28 |
| 7 | SiH | 3.44 | 46.08 |
| 8 | SiO2 | 1.46 | 99.47 |
| 9 | SiH | 3.44 | 42.42 |
| 10 | SiO2 | 1.46 | 98.17 |
| 11 | SiH | 3.44 | 47.48 |
| 12 | SiO2 | 1.46 | 94.96 |
| 13 | SiH | 3.44 | 44.32 |
| 14 | SiO2 | 1.46 | 99.52 |
| 15 | SiH | 3.44 | 46.17 |
| 16 | SiO2 | 1.46 | 99.35 |
| 17 | SiH | 3.44 | 42.19 |
| 18 | SiO2 | 1.46 | 97.21 |
| 19 | SiH | 3.44 | 51.29 |
| 20 | SiO2 | 1.46 | 90.23 |
| 21 | SiH | 3.44 | 43.31 |
| 22 | SiO2 | 1.46 | 95.03 |
| 23 | SiH | 3.44 | 48.85 |
| 24 | SiO2 | 1.46 | 100.83 |
| 25 | SiH | 3.44 | 38.55 |
| 26 | SiO2 | 1.46 | 82.78 |
| 27 | SiH | 3.44 | 55.25 |
| 28 | SiO2 | 1.46 | 100.8 |
| 29 | SiH | 3.44 | 11.79 |
| 30 | SiO2 | 1.46 | 30.2 |
The theoretical transmission spectrum that the second long wave leads to membrane system can be obtained by being analyzed using Macleod software data in table 2, such as
Shown in Fig. 3, the results showed that the second long wave leads to membrane system in the wide cut-off of 300-785nm spectral coverage, has in 850-1000nm spectral coverage high saturating
Cross rate.
The transmitted spectrum of optical filter corresponding with Tables 1 and 2 can be measured by testing, as shown in Figure 4, the results showed that should
Optical filter has high transmittance in the wide cut-off of 300-785nm spectral coverage, in 830-1000nm spectral coverage.
The embodiment of the invention provides a kind of 830-950nm to penetrate near infrared filter, which can reach excellent
Technical indicator: there is >=90% high transmittance in 830-950nm spectral coverage, while in the wide cut-off of 300-750nm spectral coverage, cut-off region
Mean transmissivity < 0.001% in domain can greatly improve the passband of the spectral coverage optical filter and the characteristic of rejection zone, refer to meet
The requirement of line sensor module.
Optical filter provided in an embodiment of the present invention is using the silane film layer of high refractive index and the silicon oxide film of low-refraction
Layer is alternately superimposed, and film layer number is less, and thicknesses of layers can satisfy in ultra-thin substrates (long 77mm × wide 77mm × thickness 0.21mm) two
It is coated with requirement on a surface, which can also meet under low temperature (- 40 DEG C), high temperature (+85 DEG C), high humidity (90%) environment
The requirements such as work.
Embodiment two:
The embodiment of the invention also provides a kind of preparation method of optical filter, this method can be in vacuum sputtering film plating machine
It completes, the optical filter such as above-described embodiment one can be prepared by this method.This method comprises:
The first long wave is respectively formed in the two sides of transparent substrates and leads to membrane system and the logical membrane system of the second long wave, obtains optical filter；
Wherein, the first long wave leads to membrane system and the logical membrane system of the second long wave includes the high refractive index layer and low folding of alternately superposition
Penetrate rate film layer；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and the first long wave leads in the intermediate zone of membrane system
The a length of 700-900nm of cardiac wave；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, and the second long wave leads to membrane system
Intermediate zone central wavelength is 780-900nm；Wherein, H corresponds to high refractive index layer, and L corresponds to low-index film.
In the embodiment of the present invention, the first long wave is respectively formed in the two sides of transparent substrates and leads to membrane system and the logical film of the second long wave
System；Wherein, the first long wave leads to membrane system and the logical membrane system of the second long wave includes the high refractive index layer and low-refraction of alternately superposition
Film layer；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and the first long wave leads to cardiac wave in the intermediate zone of membrane system
A length of 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, and the second long wave leads to the transition of membrane system
Band central wavelength is 780-900nm；Wherein, H corresponds to high refractive index layer, and L corresponds to low-index film.It is obtained using this method
Optical filter have high transmittance, while in the wide cut-off of 300-750nm spectral coverage, considerably improve the spectrum in 830-950nm spectral coverage
The section passband of optical filter and the characteristic of rejection zone, so as to meet the requirement of fingerprint sensor mould group.
In some possible embodiments, above-mentioned high refractive index layer includes silane film layer, and low-index film includes
Membranous layer of silicon oxide；The first long wave is respectively formed in the two sides of transparent substrates and leads to membrane system and the logical membrane system of the second long wave, comprising: passes through magnetic
Sputtering technology and silicon target are controlled, leads to silane film layer and oxygen in membrane system in layer-by-layer the first long wave of alternating deposit in the side of transparent substrates
SiClx film layer, until completing the deposition that the first long wave leads to membrane system；In layer-by-layer the second long wave of alternating deposit in the other side of transparent substrates
Silane film layer and membranous layer of silicon oxide in logical membrane system, until completing the deposition that the second long wave leads to membrane system.
Specifically, using magnetically controlled sputter method, target uses the silicon target of high-purity, and target power can be 5-12kw, target
The working gas of material is argon gas, and the gas flow of argon gas is 50-300sccm；The working gas of radio frequency oxidation source is argon gas, hydrogen
And oxygen, wherein silane argon flow is 50-500sccm, hydrogen flowing quantity 30-150sccm；The argon flow of silica is
50-300sccm, oxygen flow 100-350sccm.Silane film layer and silicon oxide film are formed using the silicon target of high-purity
Layer, quality of forming film are more preferable.
Optionally, the sputtering rate of silane film layer is 0.1-1.0nm/s, and the sputtering rate of membranous layer of silicon oxide is 0.5-
1.5nm/s.For example, the sputtering rate of silane film layer is 0.45nm/s, the sputtering rate of membranous layer of silicon oxide is 0.85nm/s.
In order to make it easy to understand, the present embodiment additionally provides a kind of detailed process for preparing above-mentioned optical filter.Fig. 5 is the present invention
The flow diagram of the preparation method for a kind of optical filter that embodiment provides, wherein transparent substrates are substrate of glass, high refractive index
Film layer is silane film layer, and low-index film is membranous layer of silicon oxide, and uses NSP-1650V vacuum sputtering film plating machine system
It is standby.As shown in figure 5, method includes the following steps:
Clean substrate of glass is fitted into clean low vacuum chamber, and is evacuated to 5.0E-0Pa or less by step S502.
Specifically, the indoor impurity of coating machine secondary cavity vacuum can be removed with dust catcher, it will be by the dry of ultrasonic cleaning
Net substrate of glass is installed on coating clamp and is quickly packed into clean low vacuum chamber, is evacuated to 5.0E-0Pa or less.
Step S504, substrate of glass is moved in high vacuum chamber, and is evacuated to 1.0E-02Pa or less.
Specifically, coating clamp can be exchanged to film forming room, main chamber, vacuum is evacuated to 7.0E-04Pa, starts to form a film.
Step S506, the plasma bombardment glass basic surface issued with radio frequency source.
Specifically, the plasma bombardment glass basic surface 1-5min issued with radio frequency source, RF source power can be
2-5kw, radio frequency source working gas can be Ar gas, and gas flow can be 200-500sccm.For example, issued with radio frequency source
Plasma bombardment glass basic surface 1min, RF source power 2-4kw, radio frequency source working gas is Ar gas, gas flow
For 300-500sccm.
Step S508, using magnetically controlled sputter method, in the side of substrate of glass, layer-by-layer the first long wave of alternating deposit leads to membrane system
In silane film layer and membranous layer of silicon oxide, until complete the first long wave lead to membrane system deposition.
Specifically, the sputtering rate of silane film layer can be 0.25-0.6nm/s, and the sputtering rate of membranous layer of silicon oxide can
Think 0.6-1.0nm/s；Target can use the silicon target of 99.999% purity, and target power can be 6-10kw, the work of target
Making gas is argon gas, and the gas flow of argon gas can be 80-150sccm；The working gas of radio frequency oxidation source be argon gas, hydrogen and
Oxygen, wherein silane argon flow can be 300-500sccm, and hydrogen flowing quantity can be 30-100sccm；The argon of silica
Throughput can be 100-300sccm, and oxygen flow can be 200-300sccm.
Step S510, layer-by-layer the second long wave of alternating deposit in the other side of substrate of glass lead to membrane system in silane film layer and
Membranous layer of silicon oxide, until completing the deposition that the second long wave leads to membrane system.
It should be noted that step S508 and step S510 execute sequence without successive.The detailed process of step S510 can be with
Referring to the detailed process of step S508, which is not described herein again.
Step S512, substrate of glass cooled to room temperature obtain 830-950nm through near infrared filter.
The above-mentioned optical filter being prepared is performed the following performance tests:
Using the universal spectrophotometer of Cary 7000, the transmitted spectrum of optical filter is measured as shown in figure 4, showing the filter
Mating plate has high transmittance in 830-950nm spectral coverage, and it is average saturating in 830-900nm spectral coverage that the optical filter is calculated
Crossing rate is 99.15%, and the mean transmissivity in 300-780nm spectral coverage is 0.001%.
Embodiment three:
The embodiment of the invention also provides a kind of fingerprint recognition mould group, which includes such as above-described embodiment one
Optical filter.
Example IV:
The embodiment of the invention also provides a kind of electronic equipment, which includes that the fingerprint of above-described embodiment three such as is known
Other mould group.
Above-mentioned electronic equipment can be, but not limited to as mobile phone.
Preparation method, fingerprint recognition mould group and the electronic equipment of optical filter provided in an embodiment of the present invention, with above-mentioned implementation
The optical filter technical characteristic having the same that example provides reaches identical technology effect so also can solve identical technical problem
Fruit.
It is apparent to those skilled in the art that for convenience and simplicity of description, the optical filtering of foregoing description
The specific work process of the preparation method of piece, fingerprint recognition mould group and electronic equipment, can be with reference in aforementioned optical filter embodiment
Corresponding process, details are not described herein.
In all examples being illustrated and described herein, any occurrence should be construed as merely illustratively, without
It is as limitation, therefore, other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In addition, in the description of the embodiment of the present invention unless specifically defined or limited otherwise, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
Finally, it should be noted that embodiment described above, only a specific embodiment of the invention, to illustrate the present invention
Technical solution, rather than its limitations, scope of protection of the present invention is not limited thereto, although with reference to the foregoing embodiments to this hair
It is bright to be described in detail, those skilled in the art should understand that: anyone skilled in the art
In the technical scope disclosed by the present invention, it can still modify to technical solution documented by previous embodiment or can be light
It is readily conceivable that variation or equivalent replacement of some of the technical features；And these modifications, variation or replacement, do not make
The essence of corresponding technical solution is detached from the spirit and scope of technical solution of the embodiment of the present invention, should all cover in protection of the invention
Within the scope of.Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. a kind of optical filter, which is characterized in that including transparent substrates and be separately positioned on the first of the transparent substrates two sides
Long wave leads to membrane system and the second long wave leads to membrane system；
First long wave leads to membrane system and the logical membrane system of second long wave includes the high refractive index layer and low folding of alternately superposition
Penetrate rate film layer；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and first long wave leads to membrane system
Intermediate zone central wavelength is 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14, described
The intermediate zone central wavelength that second long wave leads to membrane system is 780-900nm；Wherein, H corresponds to the high refractive index layer, and L corresponds to institute
State low-index film.
2. optical filter according to claim 1, which is characterized in that the material of the high refractive index layer include silane or
Silicon nitride.
3. optical filter according to claim 1, which is characterized in that the material of the low-index film includes silica.
4. optical filter according to claim 1, which is characterized in that the material of the transparent substrates includes glass, quartz, indigo plant
Jewel or silicate optical glass.
5. optical filter according to claim 4, which is characterized in that the depth of parallelism of the transparent substrates is less than 30 ".
6. a kind of preparation method of optical filter characterized by comprising
The first long wave is respectively formed in the two sides of transparent substrates and leads to membrane system and the logical membrane system of the second long wave, obtains optical filter；
Wherein, first long wave lead to membrane system and second long wave and lead to membrane system include alternately the high refractive index layer of superposition and
Low-index film；The film structure that first long wave leads to membrane system includes (0.5HL0.5H) ^10, and first long wave leads to film
The intermediate zone central wavelength of system is 700-900nm；The film structure that second long wave leads to membrane system includes (0.5HL0.5H) ^14,
The intermediate zone central wavelength that second long wave leads to membrane system is 780-900nm；Wherein, H corresponds to the high refractive index layer, and L pairs
Answer the low-index film.
7. described according to the method described in claim 6, it is characterized in that, the high refractive index layer includes silane film layer
Low-index film includes membranous layer of silicon oxide；
The two sides in transparent substrates are respectively formed the first long wave and lead to membrane system and the logical membrane system of the second long wave, comprising:
By magnetron sputtering technique and silicon target, the first long wave described in the layer-by-layer alternating deposit in the side of the transparent substrates leads to membrane system
In silane film layer and membranous layer of silicon oxide, and the second long wave described in the layer-by-layer alternating deposit in the other side of the transparent substrates
Silane film layer and membranous layer of silicon oxide in logical membrane system.
8. the method according to the description of claim 7 is characterized in that the sputtering rate of the silane film layer is 0.1-1.0nm/
S, the sputtering rate of the membranous layer of silicon oxide are 0.5-1.5nm/s.
9. a kind of fingerprint recognition mould group, which is characterized in that including such as above-mentioned optical filter of any of claims 1-5.
10. a kind of electronic equipment, which is characterized in that including such as above-mentioned fingerprint recognition mould group as claimed in claim 9.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354371A (en) * | 2001-12-07 | 2002-06-19 | 中国科学院上海技术物理研究所 | Super narrow bandpass optical film filter and film layer thickness generation method |
| CN103018812A (en) * | 2012-12-17 | 2013-04-03 | 晋谱（福建）光电科技有限公司 | Near-infrared narrow-band optical filter used for somatosensory recognition system |
| CN103207424A (en) * | 2013-04-01 | 2013-07-17 | 中国船舶重工集团公司第七一七研究所 | Super wide band cut-off long-wave-pass filter optical film and production method thereof |
| CN103245992A (en) * | 2013-04-25 | 2013-08-14 | 兰州空间技术物理研究所 | 1.55 mu m-1.75 mu m transmissive short-wave infrared optical filter and preparation method |
| US20140014838A1 (en) * | 2012-07-16 | 2014-01-16 | Karen Denise Hendrix | Optical filter and sensor system |
| CN105785491A (en) * | 2016-05-23 | 2016-07-20 | 浙江水晶光电科技股份有限公司 | Reflection optical filter and vehicle-mounted head-up display system |
| CN106908884A (en) * | 2015-12-09 | 2017-06-30 | 现代自动车株式会社 | Radio wave with metallic luster can penetrated bed |
| US20180332242A1 (en) * | 2016-01-25 | 2018-11-15 | Schott Glass Technologies Co. Ltd. | System for optical detection of parameters |
| CN108897085A (en) * | 2018-08-06 | 2018-11-27 | 信阳舜宇光学有限公司 | Optical filter and infrared image sensing system comprising the optical filter |
| CN109164527A (en) * | 2018-11-05 | 2019-01-08 | 无锡泓瑞航天科技有限公司 | Five-channel multi-color filter |
| CN209400726U (en) * | 2019-03-05 | 2019-09-17 | 浙江水晶光电科技股份有限公司 | Optical filter, fingerprint recognition mould group and electronic equipment |
-
2019
- 2019-03-05 CN CN201910165758.3A patent/CN109655954B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354371A (en) * | 2001-12-07 | 2002-06-19 | 中国科学院上海技术物理研究所 | Super narrow bandpass optical film filter and film layer thickness generation method |
| US20140014838A1 (en) * | 2012-07-16 | 2014-01-16 | Karen Denise Hendrix | Optical filter and sensor system |
| CN104471449A (en) * | 2012-07-16 | 2015-03-25 | Jds尤尼弗思公司 | Optical filter and sensor system |
| CN103018812A (en) * | 2012-12-17 | 2013-04-03 | 晋谱（福建）光电科技有限公司 | Near-infrared narrow-band optical filter used for somatosensory recognition system |
| CN103207424A (en) * | 2013-04-01 | 2013-07-17 | 中国船舶重工集团公司第七一七研究所 | Super wide band cut-off long-wave-pass filter optical film and production method thereof |
| CN103245992A (en) * | 2013-04-25 | 2013-08-14 | 兰州空间技术物理研究所 | 1.55 mu m-1.75 mu m transmissive short-wave infrared optical filter and preparation method |
| CN106908884A (en) * | 2015-12-09 | 2017-06-30 | 现代自动车株式会社 | Radio wave with metallic luster can penetrated bed |
| US20180332242A1 (en) * | 2016-01-25 | 2018-11-15 | Schott Glass Technologies Co. Ltd. | System for optical detection of parameters |
| CN105785491A (en) * | 2016-05-23 | 2016-07-20 | 浙江水晶光电科技股份有限公司 | Reflection optical filter and vehicle-mounted head-up display system |
| CN108897085A (en) * | 2018-08-06 | 2018-11-27 | 信阳舜宇光学有限公司 | Optical filter and infrared image sensing system comprising the optical filter |
| CN109164527A (en) * | 2018-11-05 | 2019-01-08 | 无锡泓瑞航天科技有限公司 | Five-channel multi-color filter |
| CN209400726U (en) * | 2019-03-05 | 2019-09-17 | 浙江水晶光电科技股份有限公司 | Optical filter, fingerprint recognition mould group and electronic equipment |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129737A (en) * | 2019-06-04 | 2019-08-16 | 天通（嘉兴）新材料有限公司 | A kind of production method of CWDM optical filter |
| CN110058342A (en) * | 2019-06-05 | 2019-07-26 | 信阳舜宇光学有限公司 | Near-infrared bandpass filter and preparation method thereof and optical sensor system |
| WO2020244221A1 (en) * | 2019-06-05 | 2020-12-10 | 信阳舜宇光学有限公司 | Near-infrared bandpass filter and optical sensing system |
| WO2020244222A1 (en) * | 2019-06-05 | 2020-12-10 | 信阳舜宇光学有限公司 | Near-infrared bandpass filter, preparation method thereof and optical sensing system |
| CN110273126A (en) * | 2019-06-18 | 2019-09-24 | 江苏星浪光学仪器有限公司 | A kind of magnetron sputtering coating method of wide-angle low drifting optical filter |
| WO2020253535A1 (en) * | 2019-06-21 | 2020-12-24 | 福州高意光学有限公司 | Optical filter with temperature compensation effect and sensor system |
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| CN110879435A (en) * | 2019-11-18 | 2020-03-13 | 中国科学院上海技术物理研究所 | Medium-long wave infrared wide spectrum color separation sheet with zinc selenide crystal as substrate |
| CN111638572A (en) * | 2019-11-29 | 2020-09-08 | 苏州京浜光电科技股份有限公司 | 3D structured light 940nm narrow-band filter and preparation method thereof |
| CN111638572B (en) * | 2019-11-29 | 2021-03-05 | 苏州京浜光电科技股份有限公司 | 3D structured light 940nm narrow-band filter and preparation method thereof |
| CN110865433A (en) * | 2019-12-27 | 2020-03-06 | 江西水晶光电有限公司 | Optical filter for identifying fingerprints under screen and preparation method thereof |
| CN111736250A (en) * | 2020-05-22 | 2020-10-02 | 浙江晶驰光电科技有限公司 | Black film narrowband optical filter and preparation method thereof |
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