CN110579829A - Near-infrared filter, preparation method thereof and filtering equipment - Google Patents
Near-infrared filter, preparation method thereof and filtering equipment Download PDFInfo
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- CN110579829A CN110579829A CN201810838309.6A CN201810838309A CN110579829A CN 110579829 A CN110579829 A CN 110579829A CN 201810838309 A CN201810838309 A CN 201810838309A CN 110579829 A CN110579829 A CN 110579829A
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- 238000001914 filtration Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 42
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 40
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 40
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 40
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 19
- 239000010980 sapphire Substances 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 16
- 230000003287 optical effect Effects 0.000 abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 118
- 238000002834 transmittance Methods 0.000 description 16
- 238000009616 inductively coupled plasma Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention relates to the technical field of optical devices, and particularly provides a near-infrared optical filter, a preparation method thereof and optical filtering equipment. The near-infrared filter provided by the invention comprises a glass substrate and a filter layer arranged on the surface of one side of the glass substrate, wherein the filter layer comprises SiO (silicon dioxide) layers which are alternately arranged in sequence2A film layer and an SiH film layer, wherein, SiO2Film layer in contact with glass substrate, SiO2The sum of the number of layers of the film layer and the SiH film layer is 20-40 layers, and the thickness of the filter layer is 3000-4500 nm. In the near infrared filter, the SiH film layer is a high refractive index film, SiO2The film layer is a low refractive index film, and the filter layer obtained by alternately stacking the two films is used for preparing the near-infrared filter, so that the near-infrared filter has an effective filtering effect. The preparation method of the near-infrared filter is simple to operate, low in cost, free of special equipment and process conditions and suitable for industrial and automatic production.
Description
Technical Field
The invention relates to the technical field of optical devices, in particular to a near-infrared optical filter, a preparation method thereof and optical filtering equipment.
Background
The near-infrared optical filter plays an important role in aerospace meteorology, natural disasters, resource general survey, remote sensing systems, infrared cameras and a plurality of military products. From the perspective of optical coating, the near-infrared filter is an optical device that has high transmittance for a specific wavelength band and high cutoff for another characteristic wavelength band. The near-infrared filter has extremely high requirements on the thickness, firmness and optical performance of each film layer. However, the existing near-infrared filters have few varieties, high preparation difficulty, low product yield, high cost, poor filtering effect and the like, which are technical problems to be solved.
the existing near-infrared filter mainly uses common glass (refractive index is 1.52) as a matrix, and adopts Ge and Ta2O5、TiO2、Si、SiO、SiO2The scheme of material combination is used as a filter layer to prepare the near-infrared filter, the filter has high absorptivity to near-infrared band light, and particularly, more than 80 layers of material layers in the filter layer need to be prepared to achieve a good light filtering effect. Therefore, the preparation process and difficulty of the filter layer are increased, the material cost and the thickness of the optical filter are increased, and the quality and the yield of the optical filter are difficult to guarantee.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The first objective of the present invention is to provide a near-infrared filter, so as to alleviate the technical problems in the prior art that the thickness of the near-infrared filter is thick, the filtering effect is poor, the yield is low, the number of stacked layers of materials is large, and the preparation difficulty and the cost are high.
The second objective of the present invention is to provide a method for preparing the near-infrared filter, so as to alleviate the technical problems in the prior art that the yield of the production process of the near-infrared filter is low, the cost is high, and the prepared near-infrared filter has a poor filtering effect.
The third purpose of the present invention is to provide a light filtering device, which alleviates the lack of a light filtering device with good light filtering effect and low cost in the prior art.
In order to achieve the above purpose of the present invention, the following technical solutions are adopted:
A near-infrared filter comprises a glass substrate and a filter layer arranged on the surface of one side of the glass substrate;
The filter layer comprises SiO alternately arranged in sequence2Film layer and SiH film layer, the SiO2The film layer is in contact with the glass substrate;
The SiO2The sum of the number of the layers of the film layer and the SiH film layer is 20-40 layers, and the thickness of the filter layer is 3000-4500 nm.
Further, the SiO2The sum of the number of layers of the film layer and the SiH film layer is 20-35 layers, preferably 20-30 layers.
Further, the SiO2the sum of the thicknesses of all the layers of the film layer is 2500-3500nm, and the sum of the thicknesses of all the layers of the SiH film layer is 500-1000 nm.
Further, the SiO2The thickness of each layer of the film layer is 10-400nm, and the thickness of each layer of the SiH film layer is 10-100 nm.
Further, the glass substrate is sapphire glass.
The preparation method of the near-infrared optical filter comprises the steps of sequentially and alternately preparing SiO on the surface of the glass substrate2A membrane layer and an SiH membrane layer.
Further, SiO is sequentially and alternately deposited on the surface of the glass substrate by utilizing a sputtering process2A membrane layer and an SiH membrane layer.
Further, in the sputtering process, Si is used as a target material, oxygen and hydrogen are sequentially and alternately introduced to serve as reaction gases, and SiO is sequentially and alternately deposited on the surface of the glass substrate2A membrane layer and an SiH membrane layer.
Further, SiO is deposited2The sputtering technological parameters of the film layer comprise: vacuum degree of 6.0X 10-3-10×10-3Pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, oxygen flow rate 260-;
Further, the sputtering process parameters for depositing the SiH film layer include: vacuum degree of 6.0X 10-3-10×10-3Pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, and hydrogen flow rate 380-.
A light filtering device comprises the near-infrared filter or the near-infrared filter obtained by the preparation method.
Compared with the prior art, the invention has the beneficial effects that:
The invention provides a near-infrared filter, which comprises glassThe glass substrate and the filter layer arranged on one side surface of the glass substrate are arranged, and the filter layer comprises SiO (silicon dioxide) layers which are alternately arranged in sequence2A film layer and an SiH film layer, wherein, SiO2Film layer in contact with glass substrate, SiO2The total number of layers of the film layer and the SiH film layer is 20-40 layers, and the thickness of the filter layer is 3000-4500 nm. In the near infrared filter, the SiH film layer is a high-refractive-index film, namely SiO2The film layer is a low refractive index film, and SiO with specific number of layers and specific thickness is alternately stacked2the composite layer of the film layer and the SiH film layer is used as a filter layer of the near-infrared filter, and light rays in each wave band are continuously reflected, refracted, transmitted and absorbed through the filter layer, so that the near-infrared filter has extremely small absorption on the light rays in the near-infrared wave band, the light rays in other wave bands are effectively transmitted through the near-infrared filter, and the light rays in other wave bands are effectively cut off, so that the near-infrared filter has an effective filtering effect. Specifically, the transmittance of the near-infrared filter for light with wavelength bands of 1530-1570nm can reach more than 92%, the transmittance for light with wavelength bands of 330-1400nm can reach less than 2%, and the near-infrared filter can completely absorb light with wavelength bands of 300-700nm, thereby effectively playing a role in filtering. The near infrared filter is thin and SiO2The total number of layers of the film layer and the SiH film layer is small, the preparation process is simplified, the raw material consumption is greatly reduced, the production cost is greatly reduced, the yield of the product is improved, the yield of the product can reach 90%, meanwhile, the firmness of the filter layer and the glass substrate is high, the stability of the near-infrared filter is good, and the near-infrared filter can be applied to various scenes.
The preparation method of the near-infrared filter provided by the invention is simple to operate, low in cost, free of special equipment and process conditions and suitable for industrial and automatic production.
The invention finally provides a light filtering device which comprises the near-infrared light filter or the near-infrared light filter prepared by the preparation method. The filtering device has the performance advantages of the near-infrared filter.
Drawings
FIG. 1 is a chart of spectral detection of a near-infrared filter of example 4 in a test example of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer.
The invention provides a near-infrared filter, which comprises a glass substrate and a filter layer arranged on the surface of one side of the glass substrate;
The filter layer comprises SiO alternately arranged in sequence2Film and SiH film, SiO2The film layer is contacted with the glass substrate;
SiO2The sum of the number of layers of the film layer and the SiH film layer is 20-40 layers, and the thickness of the filter layer is 3000-4500 nm.
In the near infrared filter, the SiH film layer is a high-refractive-index film, namely SiO2The film layer is a low refractive index film, and SiO with specific number of layers and specific thickness is alternately stacked2The composite layer of the film layer and the SiH film layer is used as a filter layer of the near-infrared filter, and light rays in each wave band are continuously reflected, refracted, transmitted and absorbed through the filter layer, so that the near-infrared filter has extremely small absorption on the light rays in the near-infrared wave band, the light rays in other wave bands are effectively transmitted through the near-infrared filter, and the light rays in other wave bands are effectively cut off, so that the near-infrared filter has an effective filtering effect. In the invention, the thickness of the filter layer is 3000 + 4500nm, the SiH film layer and the SiO film layer2When the sum of the number of the film layers is more than 20, the filtering effect of the near-infrared filter can be ensured. In a certain range, SiH film layer and SiO2The larger the sum of the number of layers of the film layer is, the better the filtering effect of the near-infrared filter is, but the thickness of the filter layer is also large and exceeds a certain value, so that the filtering effect is not obviously improved, and the production cost is also increased unnecessarily. Therefore, while ensuring the light filtering effect, if the thickness of the filter layer and the SiH film layer and SiO are reduced2The total number of layers of the film layer can greatly reduce the production cost. Specifically, the transmittance of the near-infrared filter for light in 1530-1570nm band can reach more than 92%, while the transmittance for light in 330-1400nm band can reach less than 2%, and meanwhile, the near-infrared filter can completely absorb light in 300-700nm band,Effectively playing a role of filtering light. The near infrared filter is thin and SiO2The total number of layers of the film layer and the SiH film layer is small, the preparation process is simplified, the raw material consumption is greatly reduced, the production cost is greatly reduced, the yield of products is improved, meanwhile, the firmness of the filter layer and the glass substrate is high, the stability of the near-infrared filter is good, and the filter can be applied to various scenes.
In the present invention, the SiH film layer and SiO film layer2The total number of layers of film is typically, but not limited to, 20, 21, 23, 25, 27, 29, 31, 33, 35, 37, 39, or 40; the thickness of the filter layer is typically, but not limited to, 3000nm, 3100nm, 3200nm, 3300nm, 3400nm, 3500nm, 3600nm, 3700nm, 3800nm, 3900nm, 4000nm, 4100nm, 4200nm, 4300nm, 4400nm, or 4500 nm.
Is different from the traditional infrared filter adopting Ge and Ta2O5、TiO2、Si、SiO、SiO2The invention adopts SiH and SiO2The combined superposition method reduces the thickness of the near-infrared filter layer and simplifies the preparation process, and has the characteristics of low cost and simple preparation.
In some embodiments of the present invention, the glass substrate may be ordinary glass, tempered glass, quartz glass, sapphire glass, or the like. The chemical composition of the ordinary glass is Na2SiO3、CaSiO3、SiO2Or Na2O·CaO·6SiO2And the main component is silicate double salt which is amorphous solid with a random structure. The composition of the toughened glass is the same as that of the common glass, but the toughened glass is the prestressed glass obtained by reprocessing the common glass. Quartz glass is glass prepared from pure quartz, SiO2The content is more than 99.5 percent, the thermal expansion coefficient is low, the high temperature resistance is high, the chemical stability is good, and the ultraviolet light and the infrared light are transmitted. Sapphire glass generally refers to artificially synthesized sapphire, which is a general name of corundum with other colors besides red sapphire in corundum, and the main component of the sapphire is alumina (Al)2O3) The sapphire glass has high temperature resistance, good heat conduction and high hardnessIt is infrared transparent and has high chemical stability.
In some preferred embodiments, the glass substrate is sapphire glass. In the embodiment of the invention, when the sapphire glass is used as the substrate, the light absorption rate of the sapphire glass to the near-infrared band is smaller, and the sapphire glass is matched with the filter layer to play a more effective role in filtering light. Meanwhile, the sapphire glass and the filter layer are combined more tightly, the surface is compact, the firmness is high, the stability is good, and the cost is low.
In a preferred embodiment of the present invention, the SiH film layer is formed with SiO2The sum of the number of layers of the film layers is 20 to 35 layers, preferably 20 to 30 layers. In the preferred embodiment of the present invention, the SiH film layer and the SiO film layer of the near infrared filter2The total number of the film layers is greatly reduced, the thickness of the filter layer is also greatly reduced, and even 20-35 layers, even 20-30 layers can completely achieve excellent filtering effect, thereby greatly reducing the production cost.
in a preferred embodiment of the invention, SiO2The sum of the thicknesses of the layers is 2500-3500nm, and the sum of the thicknesses of the layers of the SiH film is 500-1000 nm. By the reaction of SiO2The sum of the thicknesses of the film layers and the sum of the thicknesses of the SiH film layers are optimized and limited, and the two film layers are matched with each other to achieve the purpose of filtering light well. SiO 22The numerical value of the sum of the thicknesses of all the layers of the film layer and the sum of the thicknesses of all the layers of the SiH film layer is too low, so that the cut-off effect of the formed filter layer on light in other wave bands can be reduced; SiO 22The sum of the thicknesses of the layers of the film layer and the sum of the thicknesses of the layers of the SiH film layer are too large, and the transmittance of the filter layer to near-infrared band light may decrease. SiO 22The sum of the thicknesses of the layers of the film layer is typically, but not limited to, 2500nm, 2600nm, 2700nm, 2800nm, 2900nm, 3000nm, 3100nm, 3200nm, 3300nm, 3400nm, or 3500 nm; the sum of the thicknesses of the layers of the SiH film layer is typically, but not limited to, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000 nm.
In a preferred embodiment of the invention, SiO2The thickness of each layer of the film layer is 10-400nm, and the thickness of each layer of the SiH film layer is 10-100 nm. Mixing SiO2The thickness of each of the film layer and the SiH film layer is preferably definedWithin a certain range, SiO can be ensured2The thickness between each layer of rete is even relatively, and the thickness between each layer of SiH rete is even relatively, and then improves the stop action to near infrared band light's transmittance and other wave band light. SiO 22The thickness of the film layer is typically, but not limited to, 10nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, or 400 nm; the thickness of the SiH film layer is typically, but not limited to, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100 nm.
The invention also provides a preparation method of the near-infrared filter, which is characterized in that SiO is sequentially and alternately prepared on the surface of the glass substrate2A membrane layer and an SiH membrane layer. The method has the advantages of simple operation, low cost, no need of special equipment and process conditions, and suitability for industrial and automatic production.
In a preferred embodiment of the present invention, SiO is alternately deposited on the surface of the glass substrate by a sputtering process2A membrane layer and an SiH membrane layer.
In a preferred embodiment of the present invention, in the sputtering process, Si is used as a target material, and SiO is sequentially and alternately deposited on the surface of the glass substrate by sequentially and alternately introducing oxygen and hydrogen as reaction gases2A membrane layer and an SiH membrane layer. Sputtering Si target material on the surface of the glass substrate by a sputtering process, forming a silicon film on the glass substrate by the Si target material, and reacting the silicon film with oxygen to generate SiO2And (3) reacting the silicon film with hydrogen to generate an SiH film, and repeating the reaction for multiple times to obtain the near-infrared filter. The sputtering process makes the Si target material contact and react with oxygen or hydrogen more fully to form SiO on the surface of the glass substrate2The film layer or the SiH film layer is more uniformly distributed, and the rate of forming the filter layer at each position on the surface of the glass substrate is also the same.
In a preferred embodiment of the invention, SiO is deposited2The sputtering technological parameters of the film layer comprise: vacuum degree of 6.0X 10-3-10×10-3Pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, oxygen flow rate 260-.
ICP (inductively coupled plasma) is a method of generating current by electromagnetic induction with a time-varying magnetic fieldA plasma source as an energy source. ICP plasmatizes oxygen to obtain active oxygen which reacts with Si target material to generate SiO2And (5) film layer.
the vacuum is typically, but not limited to, 6.0X 10-3Pa、7.0×10-3Pa、8.0×10-3Pa、9.0×10-3Pa or 10.0X 10-3pa; the target power is typically, but not limited to, 6KW, 7KW, 8KW, 9KW, 10KW, 11KW or 12 KW; the inert gas flow rate is typically, but not limited to, 45sccm, 50sccm, 55sccm, 60sccm, or 65 sccm; ICP power is typically, but not limited to, 2KW, 3KW, 4KW, 5KW or 6 KW; the oxygen flow rate is typically, but not limited to, 260sccm, 270sccm, 280sccm, 290sccm, or 300 sccm.
Under the vacuum condition, the Si target is sputtered on the glass substrate at the flow rate of 45-65sccm by the inert gas, and oxygen is input at the flow rate of 260-300sccm, so that the Si target is deposited on the substrate to form a silicon film and reacts with the oxygen to form SiO2And (5) film layer. SiO 22The film layer has a thickness forming rate of 0.6-0.8 nm/s. By controlling SiO2The rate of film thickness formation can be calculated as SiO2The generation time of the film layer is convenient for SiO2And the film layers and the SiH film layers are alternately prepared, so that automatic management is realized.
In a preferred embodiment of the present invention, the sputtering process parameters for depositing the SiH film layer include: vacuum degree of 6.0X 10-3-10×10-3Pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, and hydrogen flow rate 380-. The vacuum is typically, but not limited to, 6.0X 10-3Pa、7.0×10-3Pa、8.0×10-3Pa、9.0×10-3Pa or 10.0X 10-3Pa; the target power is typically, but not limited to, 6KW, 7KW, 8KW, 9KW, 10KW, 11KW or 12 KW; the inert gas flow rate is typically, but not limited to, 45sccm, 50sccm, 55sccm, 60sccm, or 65 sccm; ICP power is typically, but not limited to, 2KW, 3KW, 4KW, 5KW or 6 KW; the oxygen flow rate is typically, but not limited to, 380sccm, 390sccm, 400sccm, 410sccm, or 420 sccm.
Under vacuum condition, the flow rate of inert gas is 45-65sccm to make Si targetSputtering the material on a glass substrate, inputting oxygen at 380-2and (5) film layer. SiO 22The film layer has a thickness forming rate of 0.3-0.4 nm/s. The generation time of the SiH film can be calculated by controlling the thickness forming rate of the SiH film, so that the SiH film and the SiO film can be conveniently formed2and the film layers are alternately prepared, so that automatic management is realized.
in a preferred embodiment of the invention, the inert gas is argon.
The invention finally provides a light filtering device which comprises the near-infrared light filter or the near-infrared light filter obtained by the preparation method. The filter device has the performance advantages of the near-infrared filter and is low in cost. The filtering device may be, but is not limited to, an infrared gas analyzer, an infrared detector, an infrared printer, an infrared thermometer, an infrared camera, an infrared induction toilet, etc.
In order to facilitate a further understanding of the present invention, the technical solutions of the present invention will now be described in detail with reference to the preferred embodiments.
Examples 1 to 6
Embodiments 1 to 5 provide a near-infrared filter, in which the glass substrate is sapphire glass, a filter layer is disposed on a surface of one side of the sapphire glass, and the filter layer includes SiO layers alternately disposed in sequence2a film layer and an SiH film layer. Embodiment 6 provides a near-infrared filter, wherein the glass substrate is made of ordinary glass, a filter layer is also disposed on a surface of one side of the ordinary glass, and the filter layer includes SiO layers alternately disposed in sequence2a film layer and an SiH film layer. Wherein, SiH film layer and SiO2The specific information of the thickness and number of layers of the film layers is shown in the following table:
Example 7
The embodiment provides a method for preparing a near-infrared filter, which comprises the following steps:
Step a): using a smooth 1650 sputtering machine, the vacuum degree is 8.0 × 10-3Under the condition of Pa, sputtering a Si target material onto the surface of a substrate by using argon of 45-65sccm to form a silicon thin film;
Step b): the oxygen gas is plasmatized by ICP with 50sccm argon and 280sccm oxygen gas, and reacts with the silicon thin film in step a to form SiO2A film having a velocity of 0.7nm/s in the thickness direction;
Step c): SiO 22After the film is finished, continuing to SiO2preparing a silicon film on the film, plasmatizing hydrogen gas by ICP under the conditions of 50sccm argon gas and 400sccm hydrogen gas, and reacting with SiO2Reacting the silicon film on the film to form an SiH film, wherein the speed in the thickness direction is 0.36 nm/s;
Step d): repeatedly and alternately preparing SiH film layer and SiO on substrate2And (5) film layer, and finally obtaining the near infrared filter.
Comparative examples 1 to 2
Comparative examples 1 to 2 provide near-infrared filters in which the glass substrate was sapphire glass, and the surface on one side of the sapphire glass was provided with a filter layer comprising SiO alternately arranged in this order2A film layer and an SiH film layer. Wherein, SiH film layer and SiO2The specific information of the thickness and number of layers of the film layers is shown in the following table:
Test examples
The near infrared filters of examples 1 to 6 and comparative examples 1 to 2 were prepared according to the preparation method of example 7, and the light transmittances at an incident angle of 5 ℃ of 1530-1570nm and 330-1400nm were measured. The results are shown in the following table:
| 1530-1570nm transmittance | Light transmittance of 330nm-1400nm | |
| Example 1 | 92.0％ | 1.56％ |
| Example 2 | 92.47％ | 1.47％ |
| Example 3 | 92.78％ | 1.26％ |
| Example 4 | 93.58％ | 0.57％ |
| Example 5 | 92.42％ | 0.98％ |
| Example 6 | 92.03％ | 1.25％ |
| Comparative example 1 | 91.56％ | 5.21％ |
| Comparative example 2 | 91.23％ | 5.45％ |
Meanwhile, the film firmness of the near-infrared filters in the embodiments 1 to 6 is detected, and the 3M adhesive tape is continuously tested for 5 times, wherein the film firmness reaches 5B; the temperature of the mixture is continuously tested for 5 times by 3M adhesive tape after being boiled for 2 hours at 80 ℃, and the temperature can also reach 5B.
The spectrum of example 4 is shown in FIG. 1, where the light transmittances at 1530-1570nm and 330-1400nm are both optimal, and the light at 300-700nm is absorbed completely. In stability experiments, the light transmittance of the high-transmittance area is not changed when the film is placed in the air for 3 months without wavelength drift.
Further analysis shows that the total number of layers is the same and the preparation process is similar in example 4 and example 6, but the performance of the near-infrared filter prepared by using sapphire glass as the substrate in example 4 is better than that of the near-infrared filter prepared by using ordinary glass as the substrate in example 6, which indicates that the performance of the near-infrared filter prepared by using sapphire glass as the substrate of the near-infrared filter is more excellent.
Further analysis shows that the number of the layers in comparative example 1 is 19, and the thickness of the filter layer is 3213 nm; comparative example 2 the number of layers was 27 and the thickness of the filter layer was 2632 nm. The transmittance of the near-infrared filter of comparative examples 1-2 in the wavelength band of 1530-1570nm can reach 91%, but the transmittance in the wavelength band of 330nm-1400nm is significantly higher than that of the near-infrared filter of examples 1-6, which indicates that the near-infrared filter of comparative examples 1-2 has poor selective transmittance to light and cannot achieve good light filtering effect, and further indicates that the SiO in the application2The sum of the numbers of layers of the film layer and the SiH film layer and the definition of the thickness of the filter layer have better effects than those of comparative examples 1 to 2.
While particular embodiments of the present invention have been illustrated and described, it would be obvious that various other changes and modifications can be made without departing from the spirit and scope of the invention. It is therefore intended to cover in the appended claims all such changes and modifications that are within the scope of this invention.
Claims (10)
1. The near-infrared filter is characterized by comprising a glass substrate and a filter layer arranged on the surface of one side of the glass substrate; the filter layer comprises SiO alternately arranged in sequence2Film layer and SiH film layer, the SiO2The film layer is in contact with the glass substrate;
The SiO2The sum of the number of the layers of the film layer and the SiH film layer is 20-40 layers, and the thickness of the filter layer is 3000-4500 nm.
2. The near-infrared filter according to claim 1, wherein the SiO is present in an amount of less than one2The sum of the number of layers of the film layer and the SiH film layer is 20-35 layers, preferably 20-30 layers.
3. the near-infrared filter according to claim 1, wherein the SiO is present in an amount of less than one2The sum of the thicknesses of all the layers of the film layer is 2500-3500nm, and the sum of the thicknesses of all the layers of the SiH film layer is 500-1000 nm.
4. The near-infrared filter according to claim 1, wherein the SiO is present in an amount of less than one2The thickness of each layer of the film layer is 10-400nm, and the thickness of each layer of the SiH film layer is 10-100 nm.
5. A near-infrared filter according to any one of claims 1 to 4, wherein the glass substrate is sapphire glass.
6. A method for manufacturing a near-infrared filter as defined in any one of claims 1 to 5, wherein SiO is alternately formed on the surface of the glass substrate in sequence2A membrane layer and an SiH membrane layer.
7. The production method according to claim 6, wherein SiO is alternately deposited on the surface of the glass substrate in sequence by a sputtering process2A membrane layer and an SiH membrane layer.
8. The method according to claim 7, wherein in the sputtering process, Si is used as a target material, and oxygen and hydrogen are sequentially and alternately introduced as reaction gases to sequentially and alternately deposit SiO on the surface of the glass substrate2a membrane layer and an SiH membrane layer.
9. Method for the production according to claim 8, characterized in that SiO is deposited2The sputtering technological parameters of the film layer comprise: vacuum degree of 6.0X 10-3-10×10-3Pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, oxygen flow rate 260-;
Preferably, the sputtering process parameters for depositing the SiH film layer include: vacuum degree of 6.0X 10-3-10×10-3pa, target power 6-12KW, inert gas flow rate 45-65sccm, ICP power 2-6KW, and hydrogen flow rate 380-.
10. a light filtering device comprising the near-infrared filter according to any one of claims 1 to 5 or the near-infrared filter obtained by the production method according to any one of claims 6 to 9.
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| CN111235521A (en) * | 2020-01-16 | 2020-06-05 | 浙江晶驰光电科技有限公司 | Preparation method of SIH film and preparation method of infrared band-pass multilayer film |
| CN112099124A (en) * | 2020-09-25 | 2020-12-18 | 广州市佳禾光电科技有限公司 | Dense light wave multiplexing optical filter |
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| CN104471449A (en) * | 2012-07-16 | 2015-03-25 | Jds尤尼弗思公司 | Optical filter and sensor system |
| CN107841712A (en) * | 2017-11-01 | 2018-03-27 | 浙江水晶光电科技股份有限公司 | Preparation method, high index of refraction hydrogenated silicon film by utilizing, optical filtering lamination and the optical filter of high index of refraction hydrogenated silicon film by utilizing |
| CN108427154A (en) * | 2017-02-13 | 2018-08-21 | 唯亚威解决方案股份有限公司 | Optical polarization optical filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104471449A (en) * | 2012-07-16 | 2015-03-25 | Jds尤尼弗思公司 | Optical filter and sensor system |
| CN108427154A (en) * | 2017-02-13 | 2018-08-21 | 唯亚威解决方案股份有限公司 | Optical polarization optical filter |
| CN107841712A (en) * | 2017-11-01 | 2018-03-27 | 浙江水晶光电科技股份有限公司 | Preparation method, high index of refraction hydrogenated silicon film by utilizing, optical filtering lamination and the optical filter of high index of refraction hydrogenated silicon film by utilizing |
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| CN111235521A (en) * | 2020-01-16 | 2020-06-05 | 浙江晶驰光电科技有限公司 | Preparation method of SIH film and preparation method of infrared band-pass multilayer film |
| CN111235521B (en) * | 2020-01-16 | 2022-04-01 | 浙江晶驰光电科技有限公司 | Preparation method of SIH film and preparation method of infrared band-pass multilayer film |
| CN112099124A (en) * | 2020-09-25 | 2020-12-18 | 广州市佳禾光电科技有限公司 | Dense light wave multiplexing optical filter |
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Application publication date: 20191217 |