CN103257385B - Long-wave infrared filter permeable within range of 11.4-12.5microns and preparation method - Google Patents
Long-wave infrared filter permeable within range of 11.4-12.5microns and preparation method Download PDFInfo
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- CN103257385B CN103257385B CN201310145618.2A CN201310145618A CN103257385B CN 103257385 B CN103257385 B CN 103257385B CN 201310145618 A CN201310145618 A CN 201310145618A CN 103257385 B CN103257385 B CN 103257385B
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Abstract
The invention relates to a long-wave infrared filter permeable within the range of 11.4-12.5microns and a preparation method, and belongs to the technical field of optical thin films. The filter comprises a germanium substrate, a long-wave-permeable film system and a short-wave-permeable film system. The structure of the long-wave-permeable film system is (0.5hl0.5h)^9(0.5741l.148h0.574l)^5(0.36h0.72l0.36h)^5, and the central wave length is 8100nm; the structure of the short-wave-permeable film system is (lh)^8, and the central wave length is 16200nm; the l and the h are zinc sulfide and a lead telluride film respectively; the substrate is heated in a vacuum, under the condition that argon is filled in an ion source, the long-wave-permeable film system and the short-wave-permeable film system are respectively deposited on two sides of the substrate in a resistive evaporation mode, and after the long-wave-permeable film system and the short-wave-permeable film system are cooled, the long-wave infrared filter permeable within the range of 11.4-12.5microns is prepared. The filter is high in permeable rate within the range of 11.4-12.5 microns, and is closed within the spectrum width of 0.9-11.25 microns and the spectrum width of 12.65-20 microns, the number of layers of film systems is small, and the long-wave infrared filter permeable within the range of 11.4-12.5microns satisfies using requirements of a remote sensing detection system. The preparation method is simple and convenient to use, stable and high in finished product rate.
Description
Technical field
The present invention relates to one 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter and preparation method, specifically, relate to one, at 11.4 ~ 12.5 μm of spectral coverages, there is high permeability, simultaneously at the LONG WAVE INFRARED optical filter of 0.9 ~ 11.25 μm and 12.65 ~ 20 μm wide cut-off of spectral coverage; Belong to optical film technology field.
Background technology
The optical filter having high permeability at 11.4 ~ 12.5 μm of spectral coverages is a crucial optical filter in current remote sensing system.In order to reduce the impact of signal noise, need in remote sensing system to suppress the light signal of 0.9 ~ 11.25 μm and 12.65 ~ 20 μm spectral coverage.Therefore need design one badly, at 11.4 ~ 12.5 μm of spectral coverages, there is high permeability, 0.9 ~ 11.25 μm and 12.65 ~ 20 μm of wide cut-offs of spectral coverage, the good LONG WAVE INFRARED optical filter of film quality simultaneously.
Summary of the invention
At 11.4 ~ 12.5 μm of spectral coverages, there is high permeability for there is no one in prior art, simultaneously in the defect of the LONG WAVE INFRARED optical filter of 0.9 ~ 11.25 μm and 12.65 ~ 20 μm wide cut-off of spectral coverage, an object of the present invention is to provide one 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, described optical filter has high permeability at 11.4 ~ 12.5 μm of spectral coverages, simultaneously 0.9 ~ 11.25 μm and 12.65 ~ 20 μm of wide cut-offs of spectral coverage.
Two of object of the present invention is to provide a kind of 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter.
Object of the present invention is achieved through the following technical solutions.
One 11.4 ~ 12.5 μm is through LONG WAVE INFRARED optical filter, and described optical filter comprises substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, described base material is germanium, and preferred size is: long 29.5mm, wide 1.64mm, thick 1.2mm, and preferred surface smooth finish is 40/20.
Long-pass film system comprises zinc sulphide (ZnS) rete and lead telluride (PbTe) rete of alternately superposition, and structure is: (0.5hl0.5h) ^9(0.574l1.148h0.574l) ^5(0.36h0.72l0.36h) ^5, centre wavelength is 8100nm, wherein, h is lead telluride rete, 0.5, 1.148 and 0.36 coefficient being respectively the corresponding basic thickness of lead telluride thicknesses of layers, 0.5h represents that lead telluride thicknesses of layers is 0.5 basic thickness, 1.148h represents that lead telluride thicknesses of layers is 1.148 basic thickness, 0.36h represents that lead telluride thicknesses of layers is 0.36 basic thickness, l is zinc sulphide rete, 1, 0.574 and 0.72 coefficient being respectively the corresponding basic thickness of ZnS-film layer thickness, l represents that ZnS-film layer thickness is 1 basic thickness, 0.574l represents that ZnS-film layer thickness is 0.574 basic thickness, 0.72l represents that ZnS-film layer thickness is 0.72 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, the periodicity of basic membrane stack (0.5hl0.5h) is 9, the periodicity of basic membrane stack (0.574l1.148h0.574l) and basic membrane stack (0.36h0.72l0.36h) is 5.
Adopt the structure of TFCalc software to described long-pass film system to be optimized, obtain preferred long-pass film system, as shown in table 1, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and structure is: (lh) ^8, and centre wavelength is 16200nm; Wherein, l is zinc sulphide rete, 1 is the coefficient of the corresponding basic thickness of ZnS-film layer thickness, l represents that ZnS-film layer thickness is 1 basic thickness, h is lead telluride rete, and 1 is the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, and h represents that lead telluride thicknesses of layers is 1 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, and the periodicity of basic membrane stack (lh) is 8.
Adopt the structure of TFCalc software to described short-pass film system to be optimized, obtain preferred short-pass film system, as shown in table 2, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter of the present invention, described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtain of the present invention 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter.
Beneficial effect
1. the invention provides one 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, described optical filter reaches excellent technique index: have high permeability τ at 11.4 ~ 12.5 μm of spectral coverages
av>=80%, simultaneously 0.9 ~ 11.25 μm and 12.65 ~ 20 μm of wide cut-offs of spectral coverage, cut-off degree of depth τ in cut-off region
λ<1%, half-power point wavelength franchise, within 50nm, greatly can be improved the passband of this spectral coverage optical filter and the characteristic of rejection zone, meet the request for utilization of remote sensing system, have high stability and high reliability;
2. the invention provides one 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, the film system of described optical filter comprises alternately superposition zinc sulphide rete and lead telluride rete, and the film system number of plies is less;
3. the invention provides a kind of 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter, described method can obtain optical filter of the present invention, process stabilizing, reproducible, easy and simple to handle, and finished product rate is high.
Accompanying drawing explanation
Fig. 1 is the transmitted light spectrogram of optical filter in embodiment 1.
Embodiment
In order to absolutely prove characteristic of the present invention and implement mode of the present invention, provide embodiment below.
Embodiment 1
One 11.4 ~ 12.5 μm is through LONG WAVE INFRARED optical filter, and described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side.
Wherein, the long 29.5mm of described substrate, wide 1.64mm, high 1.2mm, surface smoothness is 40/20.
Long-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 8100nm, and each parameters of film is as shown in table 3, wherein, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in germanium substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately superposition, and centre wavelength is 16200nm, and each parameters of film is as shown in table 4, wherein, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in germanium substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
Preparation method's step of optical filter described in the present embodiment is as follows:
(1) remove impurity in vacuum chamber with suction cleaner, then dip in absolute ethyl alcohol wiped clean vacuum chamber inwall with absorbent gauze; With analysis pure acetone ultrasonic cleaning substrate 10min, then with analysis straight alcohol ultrasonic cleaning substrate 10min respectively, clean substrate is loaded in clean vacuum chamber, is evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt the zinc sulphide rete of reactive evaporation respectively in the side of substrate successively alternating deposit long-pass film system and lead telluride rete, at zinc sulphide rete successively in alternating deposit short-pass film system of the opposite side of substrate and lead telluride rete, until complete the deposition of described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three, and supervisory wavelength and number of times are as shown in Table 3 and Table 4;
(4) substrate naturally cools to room temperature, obtains described in the present embodiment 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter.
Following performance test is carried out to described optical filter:
Adopt the test of PE company system 2000 infrared Fourier spectrometer, obtain transmitted spectrum as shown in Figure 1, with UVWINLAB software, the spectral line in Fig. 1 is calculated, known described optical filter is 85.2% at the mean transmissivity of 11.4 ~ 12.5 μm of spectral coverages, being 0.63% in the average transmittance of 0.9 ~ 11.25 μm of spectral coverage, is 0.01% in the average transmittance of 12.65 ~ 20 μm of spectral coverages.
The present invention includes but be not limited to above embodiment, every any equivalent replacement of carrying out under the spirit and principles in the present invention or local improvement, all will be considered as within protection scope of the present invention.
Claims (9)
1. 14 ~ 12.5 μm through a LONG WAVE INFRARED optical filter, it is characterized in that: described optical filter comprises germanium substrate, the long-pass film system of substrate side and the short-pass film system of substrate opposite side;
Long-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, and structure is: (0.5hl0.5h) ^9 (0.574l1.148h0.574l) ^5 (0.36h0.72l0.36h) ^5, and centre wavelength is 8100nm, h is lead telluride rete, 0.5h represents that lead telluride thicknesses of layers is 0.5 basic thickness, 1.148h represents that lead telluride thicknesses of layers is 1.148 basic thickness, 0.36h represents that lead telluride thicknesses of layers is 0.36 basic thickness, l is zinc sulphide rete, represent that ZnS-film layer thickness is 1 basic thickness, 0.574l represents that ZnS-film layer thickness is 0.574 basic thickness, 0.72l represents that ZnS-film layer thickness is 0.72 basic thickness, the periodicity of basic membrane stack (0.5hl0.5h) is 9, the periodicity of basic membrane stack (0.574l1.148h0.574l) and basic membrane stack (0.36h0.72l0.36h) is 5,
Short-pass film system comprises zinc sulphide and the lead telluride rete of alternately superposition, and structure is: (lh) ^8, and centre wavelength is 16200nm; L is zinc sulphide rete, and represent that ZnS-film layer thickness is 1 basic thickness, h is lead telluride rete, and represent that lead telluride thicknesses of layers is 1 basic thickness, the periodicity of basic membrane stack (lh) is 8;
Described basic thickness is 1/4th of long-pass film system or short-pass film system optical thickness centre wavelength.
2. according to claim 1 a kind of 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, it is characterized in that: the long 29.5mm of substrate, wide 1.64mm, thick 1.2mm; Surface smoothness is 40/20.
3. according to claim 1 and 2 a kind of 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, it is characterized in that: long-pass film system is as shown in table 1, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
。
4. according to claim 1 and 2 a kind of 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, it is characterized in that: short-pass film system is as shown in table 2, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 2 short-pass film system
。
5. according to claim 4 a kind of 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter, it is characterized in that: long-pass film system is as shown in table 1, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 1 long-pass film system
。
6. 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter as claimed in claim 1 or 2, described method step is as follows:
(1) clean substrate is loaded in clean vacuum chamber, be evacuated to 3.0 × 10
-3pa;
(2) substrate is heated to 150 DEG C, and keeps 30min;
(3) open the light-duty ion gun of Hall and lead to argon gas, airshed is 30sccm, and unlatching cathode voltage is 100 ~ 200V, and anode voltage is 50 ~ 100V, makes anode current be 0.5A; Adopt reactive evaporation respectively in substrate both sides deposition long-pass film system and short-pass film system; The rate of sedimentation of zinc sulphide rete is 2.0 ~ 3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8 ~ 1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtains 11.4 ~ 12.5 μm through LONG WAVE INFRARED optical filter.
7. a kind of 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 6, it is characterized in that: long-pass film system and thicknesses of layers are monitored as shown in table 3, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
8. a kind of 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 6, it is characterized in that: short-pass film system and thicknesses of layers are monitored as shown in table 4, the number of plies be 1 rete be the outermost layer of short-pass film system, the number of plies be 16 rete be deposited in substrate, be the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
。
9. a kind of 11.4 ~ 12.5 μm of preparation methods through LONG WAVE INFRARED optical filter according to claim 8, it is characterized in that: long-pass film system and thicknesses of layers are monitored as shown in table 3, the number of plies be 1 rete be the outermost layer of long-pass film system, the number of plies be 39 rete be deposited in substrate, be the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
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| CN201310145618.2A CN103257385B (en) | 2013-04-25 | 2013-04-25 | Long-wave infrared filter permeable within range of 11.4-12.5microns and preparation method |
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| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN105274477A (en) * | 2015-09-18 | 2016-01-27 | 无锡泓瑞航天科技有限公司 | Preparation method for long-wave infrared optical thin film resistant to high and low temperature impacts |
| CN112162343B (en) * | 2020-11-02 | 2022-09-06 | 江西水晶光电有限公司 | Medium-far infrared filter for sensor and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| CN101458354A (en) * | 2008-12-22 | 2009-06-17 | 中国航天科技集团公司第五研究院第五一○研究所 | Wide cut-off long-wave infrared narrow-band filter with spectral range of 9.2-9.6 mu m |
-
2013
- 2013-04-25 CN CN201310145618.2A patent/CN103257385B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2243085Y (en) * | 1995-10-23 | 1996-12-18 | 中国科学院上海技术物理研究所 | 8-14 micron mini-size linear graduated variation light filter |
| CN101458354A (en) * | 2008-12-22 | 2009-06-17 | 中国航天科技集团公司第五研究院第五一○研究所 | Wide cut-off long-wave infrared narrow-band filter with spectral range of 9.2-9.6 mu m |
Non-Patent Citations (2)
| Title |
|---|
| 10.4μm～12.5μm带通滤光片的设计;李少梅等;《真空与低温》;19990930;第05卷(第03期);第171-174页 * |
| 碲化铅/硫化锌红外多层滤光片的光谱漂移研究;熊玉卿等;《光学技术》;19990731(第04期);第65-67页 * |
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