CN106291793A - A kind of short-wave infrared narrow band pass filter and preparation method thereof - Google Patents
A kind of short-wave infrared narrow band pass filter and preparation method thereof Download PDFInfo
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- CN106291793A CN106291793A CN201610971376.6A CN201610971376A CN106291793A CN 106291793 A CN106291793 A CN 106291793A CN 201610971376 A CN201610971376 A CN 201610971376A CN 106291793 A CN106291793 A CN 106291793A
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- 238000002360 preparation method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000004408 titanium dioxide Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 230000002745 absorbent Effects 0.000 claims description 6
- 239000002250 absorbent Substances 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 229920000742 Cotton Polymers 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 229960004756 ethanol Drugs 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 12
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000001629 suppression Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 39
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000005315 stained glass Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses a kind of short-wave infrared narrow band pass filter, it is characterised in that including: substrate and the front side films system being formed in substrate both side surface and anti-face mask series, front side films system is: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, anti-face mask series is: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Symbol implication in film system: A is air, and S is H K9L substrate of glass, and H is that high-index material five aoxidizes two titaniums, and L is low-index material silicon dioxide, and α, β, γ and ω represent the multiple of each film system centre wavelength and centre wavelength respectively.Optical filter of the present invention has the infrared narrow band filter that centre wavelength is 1240nm and passes through spectrum, the rising and falling edges steepness of transmission bands is less than 0.5%, passband mean transmissivity reaches 80%, rejection zone mean transmissivity is less than 0.5%, restriction spectral region can be played, suppression ambient interferences, improves target resolution.
Description
Technical field
The invention belongs to optical element design technical field, relate to a kind of 1240nm meeting the use of 80K low temperature environment
Short-wave infrared narrow band pass filter and preparation method thereof.
Background technology
Short-wave infrared narrow band pass filter all has broad application prospects in terms of optic analytical instrument, optical detector, main
It is used for imaging observation and spectrum analysis over the ground to monitor, China's high-resolution earth observation systems key special subjects, also narrow to shortwave
Band optical filter proposes research and development demand.
Big visual field IRMSS short-wave infrared narrow band pass filter, it is desirable to passband mean transmissivity is high, suppression
The degree of depth is deep, passband ripple is little, cutoff range width in band cut-off, is applicable to 80K low temperature and ground environment condition, and having height can
By property and high stability.
Using before being packaged in detector due to short-wave infrared narrow band pass filter, working environment is special, and it need to meet from low
Temperature ultimate value 80K is impacted to the instantaneous temperature of high temperature limit value 80 DEG C, uses conventional method to prepare optical filter, it may appear that under low temperature
The phenomenon that filter center wave length shift and film pull-up fall, low temperature short-wave infrared narrow band pass filter is always optical thin film research
Emphasis.
Summary of the invention
(1) goal of the invention
It is an object of the invention to: provide a kind of short-wave infrared narrow band pass filter and preparation method thereof, to improve spectral scan
Instrument resolution and image quality.
(2) technical scheme
In order to solve above-mentioned technical problem, the present invention provides a kind of short-wave infrared narrow band pass filter, comprising: substrate 2 He
Being formed at the front side films system in substrate 2 both side surface and anti-face mask series, front side films system is: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, anti-face mask series is: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ
(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Symbol implication in film system: A is air, and S is H-K9L substrate of glass, and H is high
Refraction materials five aoxidizes two titaniums, and L is low-index material silicon dioxide, and α, β, γ and ω represent each film system centre wavelength respectively
Multiple with centre wavelength.
Wherein, the K9 glass that described substrate 2 selects a diameter of 20mm, thickness to be 0.5mm, its aperture N≤3, surface, locally
Aperture Δ N≤0.5, nonparallelism ＜ 30 ", surface smoothness B=V.
Wherein, in described anti-face mask series, α=0.845, β=1.55, γ=2.2, ω=2.7.
Present invention also offers the preparation method of a kind of short-wave infrared narrow band pass filter, it comprises the following steps:
S1: vacuum chamber cleans；
S2: before plated film, substrate cleans；
S3: vacuum chamber prepares
Preset Coating Materials in vacuum chamber electron gun crucible；
S4: film layer is coated with
Opening ion source, use ion beam cleaning substrate, ion source uses argon as working gas, utilizes Assisted by Ion Beam
Electron beam evaporation methods carry out film deposition.
Wherein, in described step S4, during film layer is coated with, during titanium dioxide film deposition, ion source argon gas flow 18 ±
2sccm, oxygen gas flow 25 ± 3sccm, ion beam pressure 180V～250V, ion source line 80V～120V, control deposition
Speed 0.2-0.5nm/s；During silicon dioxide film deposition, ion source argon gas flow 18 ± 2sccm, oxygen gas flow 12 ±
2sccm, ion beam pressure 180V～220V, ion source line 80V～110V, sedimentation rate 0.5-1nm/s.
Wherein, in described step S4, described ionogenic argon working gas purity is not less than 99.995%, gas flow
18sccm-22sccm。
Wherein, in described step S4, before film layer is coated with, by substrate heating to 200 ± 10 DEG C, and keep 1h.
Wherein, in described step S1, clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock with sandblasting machine, then
Dip in dehydrated alcohol with absorbent carbasus and clean vacuum chamber；In described step S2, dip in volume ratio with absorbent carbasus and defat cotton successively
The ethanol of 1:1, ether mixed solution clean substrate surface.
Wherein, in described step S3, in described electron gun crucible, preset Coating Materials purity is not less than 99.99%, preset
The amount of Coating Materials meets: 1000mm coater, titanium dioxide, silicon dioxide are respectively 100g, 150g.
Wherein, step S5 is also included: substrate is lowered the temperature, and is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, and closedown is taken out
Vacuum system, vacuum chamber takes out deposition eyeglass after dropping to room temperature.
(3) beneficial effect
Short-wave infrared narrow band pass filter that technique scheme is provided and preparation method thereof, optical filter reaches excellent skill
Art index, it is not necessary to use coloured glass, background depth is high, has the infrared narrow band filter that centre wavelength is 1240nm and passes through light
Spectrum, the rising and falling edges steepness of transmission bands is less than 0.5%, and passband mean transmissivity reaches 80%, and rejection zone mean transmissivity is little
In 0.5%, restriction spectral region can be played, suppress ambient interferences, improve target resolution；Filter performance is stable, and wavelength floats
Shifting amount is 0.0036nm/ DEG C, i.e. drifts about about 1nm to shortwave from 80 DEG C to 80K wavelength, is resistant to the instantaneous temperature punching of 80K to 80 DEG C
Hit, realized through engineering approaches application.
Accompanying drawing explanation
Fig. 1 is that 1240nm narrow band pass filter front arranges schematic diagram with anti-face mask layer, and wherein 1 is front side films system, and 2 is base
Plate, 3 is anti-face mask series.
Fig. 2 is the present embodiment optical filter 1240nm narrow band pass filter spectral transmittance and reality of wavelength under low temperature (80K)
Example curve.
Detailed description of the invention
For making the purpose of the present invention, content and advantage clearer, below in conjunction with the accompanying drawings and embodiment, the tool to the present invention
Body embodiment is described in further detail.
In order to solve technical problem present in prior art, the present invention, by design, test, develops cardiac wave in one
The short-wave infrared narrow band pass filter of a length of 1240nm, it is with K9 glass as substrate, and five oxidation two titaniums and silicon dioxide are film layer material
Material, uses vacuum film deposition method to prepare, prepares optical filter bandwidth 20nm, transmitance 80%, in all band spectral region,
In addition to main peak passband, full cut-off, product optical property, the physical strength of film layer and environmental suitability meet actual operation requirements.
Specifically, with reference to shown in Fig. 1, the present embodiment short-wave infrared narrow band pass filter includes substrate 2 and is formed at substrate 2 liang
Front side films system on side surface and anti-face mask series, front side films system is: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H 0.64L/
S, anti-face mask series is: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ(0.5LH0.5L)10ω
(0.5LH0.5L)10/S；Symbol implication in film system: A is air, and S is H-K9L substrate of glass, and H is high-index material five oxygen
Changing two titaniums, L is low-index material silicon dioxide, α, β, γ and ω represent respectively each film system centre wavelength and centre wavelength times
Number.
Wherein, the K9 glass that substrate 2 selects a diameter of 20mm, thickness to be 0.5mm, its aperture N≤3, surface, locally aperture
Δ N≤0.5, nonparallelism ＜ 30 ", surface smoothness B=V；
In anti-face mask series, α=0.845, β=1.55, γ=2.2, ω=2.7.
The advantage of the present embodiment film system is it can be avoided that single face film thickness increases film produced by optical filter after plated film
The problems such as ply stress, face type, it is expected to make cumulative stress trend towards zero, simultaneously for avoid the membrane stress impact on substrate face type,
Make two sides depositional coating stress offset in Film Design and membrane-film preparation process, go to zero realizing optical filter overall stress.
Short-wave infrared narrow band pass filter based on said structure, its preparation method comprises the following steps:
The first step, vacuum chamber cleans
Clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock with sandblasting machine, after cleaning, be cleaned by part surface not
Film layer must be had to adhere to, then dip in dehydrated alcohol with absorbent carbasus and clean vacuum chamber.
Second step, cleans before plated film
Successively with absorbent carbasus and defat cotton dip in wet ethanol, ether mixed solution (volume ratio 1:1) is cleaned surface, and is used
" method of breathing out " inspection film surface, till without greasy dirt, grit, scratch.
3rd step, vacuum chamber prepares
Appropriate Coating Materials titanium dioxide, silicon dioxide are put into electron gun crucible (for 1000mm coater, two
Titanium oxide, silicon dioxide are respectively 100g, 150g), Coating Materials purity is not less than 99.99%, blows substrate surface with ear washing bulb,
Close door for vacuum chamber immediately after.
4th step, film layer is coated with
Vacuum is not less than 2 × 10-3Pa, opens swivel mount switch, rotational workpieces frame, opens baking, set baking temperature.
Open electron gun deflection power, filament supply and rifle high pressure the most successively.
Opening ion source, with ion beam cleaning substrate 5min, ion source uses argon as working gas, and working gas is pure
Degree, not less than 99.995%, gas flow 18sccm-22sccm (optimum 20sccm), utilizes the electron beam of Assisted by Ion Beam to steam
Electroplating method carries out film deposition.
By substrate heating to 200 ± 10 DEG C, and keep 1h.
By design film system, titanium dioxide and silicon dioxide are alternately deposited with on two faces of substrate.Coating Materials deposits
Parameter is as follows:
(1) titanium dioxide film deposition
Ion source argon gas flow 18 ± 2sccm, oxygen gas flow 25 ± 3sccm, ion beam pressure 180V～
250V, ion source line 80V～120V, regulate electron gun current, full and uniform fritting coating materials, opens baffle plate, controls deposition speed
Rate 0.2-0.5nm/s；
Use this technological parameter to carry out titanium dioxide film deposition, the gather density of film layer can be improved, control thin film tensile stress
Transformation with compressive stress, it is to avoid the thermal refractive index coefficient of titanium dioxide and thermal coefficient of expansion low temperature shift.
(2) silicon dioxide film deposition
Ion source argon gas flow 18 ± 2sccm, oxygen gas flow 12 ± 2sccm, ion beam pressure 180V～
220V, ion source line 80V～110V, regulate electron gun current, full and uniform fritting coating materials, open baffle plate, sedimentation rate
0.5-1nm/s；
Use this technological parameter to carry out silicon dioxide film deposition, the gather density of film layer can be improved, improve silicon oxide film high
Low temperature environment adaptability.
5th step, substrate is lowered the temperature.
It is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes after dropping to room temperature
Go out to deposit eyeglass.
With reference to shown in Fig. 2, the present embodiment filter performance is stable, and wavelength shift is 0.0036nm/ DEG C, i.e. from 80 DEG C to
80K wavelength drifts about about 1nm to shortwave, is resistant to the instantaneous temperature impact of 80K to 80 DEG C, has realized through engineering approaches application.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and deformation, these improve and deformation
Also should be regarded as protection scope of the present invention.
Claims (10)
1. a short-wave infrared narrow band pass filter, it is characterised in that including: substrate (2) and being formed in substrate (2) both side surface
Front side films system and anti-face mask series, front side films system is: A/ (HL)4L(HL)8L(HL)8L(HL)41.64H0.64L/S, anti-face mask series
For: A/ (0.5HL0.5H)11α(0.5HL0.5H)12β(0.5LH0.5L)7γ(0.5LH0.5L)10ω(0.5LH0.5L)10/S；Film
Symbol implication in system: A is air, and S is H-K9L substrate of glass, and H is that high-index material five aoxidizes two titaniums, and L is low-refraction
Materials silicon dioxide, α, β, γ and ω represent the multiple of each film system centre wavelength and centre wavelength respectively.
2. short-wave infrared narrow band pass filter as claimed in claim 1, it is characterised in that described substrate (2) is selected a diameter of
20mm, thickness are the K9 glass of 0.5mm, its aperture N≤3, surface, locally aperture Δ N≤0.5, nonparallelism ＜ 30 ", surface light
Cleanliness B=V.
3. short-wave infrared narrow band pass filter as claimed in claim 1, it is characterised in that in described anti-face mask series, α=0.845,
β=1.55, γ=2.2, ω=2.7.
4. based on the preparation method of short-wave infrared narrow band pass filter according to any one of claim 1-3, it is characterised in that include
Following steps:
S1: vacuum chamber cleans；
S2: before plated film, substrate cleans；
S3: vacuum chamber prepares
Preset Coating Materials in vacuum chamber electron gun crucible；
S4: film layer is coated with
Opening ion source, use ion beam cleaning substrate, ion source uses argon as working gas, utilizes the electricity of Assisted by Ion Beam
Son bundle evaporation coating method carries out film deposition.
5. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 4, it is characterised in that in described step S4,
During film layer is coated with, during titanium dioxide film deposition, ion source argon gas flow 18 ± 2sccm, oxygen gas flow 25 ±
3sccm, ion beam pressure 180V～250V, ion source line 80V～120V, control sedimentation rate 0.2-0.5nm/s；Titanium dioxide
During film deposition, ion source argon gas flow 18 ± 2sccm, oxygen gas flow 12 ± 2sccm, ion beam pressure 180V～
220V, ion source line 80V～110V, sedimentation rate 0.5-1nm/s.
6. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 5, it is characterised in that in described step S4,
Described ionogenic argon working gas purity is not less than 99.995%, gas flow 18sccm-22sccm.
7. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 5, it is characterised in that in described step S4,
Before film layer is coated with, by substrate heating to 200 ± 10 DEG C, and keep 1h.
8. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 4, it is characterised in that in described step S1,
Clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock with sandblasting machine, then dip in dehydrated alcohol with absorbent carbasus and clean very
Empty room；In described step S2, successively with absorbent carbasus and defat cotton dip in the ethanol of volume ratio 1:1, ether mixed solution is cleaned
Substrate surface.
9. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 4, it is characterised in that in described step S3,
In described electron gun crucible, preset Coating Materials purity is not less than 99.99%, and the amount of preset Coating Materials meets: 1000mm plated film
Machine, titanium dioxide, silicon dioxide are respectively 100g, 150g.
10. the preparation method of short-wave infrared narrow band pass filter as claimed in claim 4, it is characterised in that also include step S5:
Substrate is lowered the temperature, and is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes after dropping to room temperature
Go out to deposit eyeglass.
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| CN114035256A (en) * | 2021-11-25 | 2022-02-11 | 天津津航技术物理研究所 | Large-angle incidence range long-wave pass filter and preparation method thereof |
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